Substrate processing method and substrate processing device

Abstract

To provide a substrate processing method and a substrate processing device that form a film containing silicon and / or germanium in recesses on a substrate having a base film with the recesses formed therein.SOLUTION: A substrate processing method for forming a film containing silicon and / or germanium in recesses on a substrate having a base film with the recesses formed therein, includes the steps of: (a) supplying a first deposition gas containing silicon and / or germanium to the substrate; and (b) simultaneously supplying a second deposition gas containing silicon and / or germanium and a halogen-containing gas to the substrate. An opening width of the recess when the process (b) is started after the process (a) is 10 nm or less.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a film formation method for forming a predetermined film on a workpiece placed in a processing vessel, the method comprising: a first film formation step in which a film is formed on a surface of the workpiece by CVD while a film formation gas is supplied into the processing vessel; a subsequent etching step in which the film formed in the first film formation step is slightly etched while an etching gas is supplied into the processing vessel; and a second film formation step in which a film is formed on the surface of the workpiece by CVD while the same film formation gas as in the first film formation step is supplied into the processing vessel. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 10-321556 Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a substrate processing method and a substrate processing apparatus for forming a film containing silicon and / or germanium in a substrate having an undercoat film in which a recess is formed. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, there is provided a substrate processing method for forming a film containing silicon and / or germanium in a recess formed in a substrate having an undercoat film, the substrate processing method comprising the steps of (a) supplying a first film formation gas containing silicon and / or germanium to the substrate, and (b) simultaneously supplying a second film formation gas containing silicon and / or germanium and a halogen-containing gas to the substrate, wherein after step (a), the opening width of the recess is 10 nm or less when step (b) is started. Effect of the Invention

[0006] According to one aspect, it is possible to provide a substrate processing method and a substrate processing apparatus for forming a film containing silicon and / or germanium in a recess formed in a substrate having an undercoat film with a recess formed therein. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic diagram showing an example of the configuration of a substrate processing apparatus. [Diagram 2] 4 is a flowchart showing an example of a substrate processing method according to the first embodiment. [Diagram 3] 3A to 3C are schematic views showing an example of a state of a substrate surface in each process of the substrate processing method according to the first embodiment. [Figure 4] 10 is a flowchart showing an example of a substrate processing method according to a second embodiment. [Diagram 5] 10 is a flowchart showing an example of a substrate processing method according to a third embodiment. [Figure 6] 13A to 13C are schematic views showing an example of a state of a substrate surface in each process of a substrate processing method according to a sixth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0009] [Substrate Processing Apparatus] A substrate processing apparatus 100 according to this embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic diagram showing an example of the configuration of the substrate processing apparatus 100.

[0010] As shown in FIG. 1, the substrate processing apparatus 100 includes a processing chamber 1, a mounting table 2, a shower head 3, an exhaust unit 4, a gas supply mechanism 5, an RF power supply unit 8, and a control unit 9.

[0011] The processing vessel 1 is made of a metal such as aluminum and has a substantially cylindrical shape. The processing vessel 1 accommodates a substrate W. A loading / unloading port 11 is formed in a side wall of the processing vessel 1 for loading or unloading the substrate W, and the loading / unloading port 11 is opened and closed by a gate valve 12. An annular exhaust duct 13 having a rectangular cross section is provided on the main body of the processing vessel 1. A slit 13a is formed along the inner peripheral surface of the exhaust duct 13. An exhaust port 13b is formed in the outer wall of the exhaust duct 13. A top wall 14 is provided on the upper surface of the exhaust duct 13 so as to close the upper opening of the processing vessel 1 via an insulating member 16. A seal ring 15 is used to hermetically seal the space between the exhaust duct 13 and the insulating member 16. The partition member 17 partitions the inside of the processing vessel 1 into upper and lower sections when the mounting table 2 (and the cover member 22) is raised to a processing position described later.

[0012] The mounting table (substrate support) 2 horizontally supports the substrate W in the processing chamber 1. The mounting table 2 is formed in a disk shape having a size corresponding to the substrate W, and is supported by a support member 23. The mounting table 2 is made of a ceramic material such as AlN or a metal material such as an aluminum or nickel alloy, and has a heater 21 embedded therein for heating the substrate W. The heater 21 generates heat when power is supplied from a heater power supply 25. The output of the heater 21 is controlled by a temperature signal from a thermocouple (not shown) provided near the upper surface of the mounting table 2, thereby controlling the substrate W to a predetermined temperature. The mounting table 2 is provided with a cover member 22 made of ceramic such as alumina so as to cover the outer circumferential region of the upper surface and the side surfaces.

[0013] A support member 23 for supporting the mounting table 2 is provided on the bottom surface of the mounting table 2. The support member 23 extends from the center of the bottom surface of the mounting table 2 through a hole formed in the bottom wall of the processing vessel 1 to below the processing vessel 1, and its lower end is connected to a lifting mechanism 24. The lifting mechanism 24 raises and lowers the mounting table 2 via the support member 23 between a processing position shown in FIG. 1 and a transfer position shown by a two-dot chain line below the processing position where the substrate W can be transferred. In addition, a flange 26 is provided on the support member 23 below the bottom surface of the processing vessel 1. A bellows 27 is provided between the bottom surface of the processing vessel 1 and the flange 26, which separates the atmosphere inside the processing vessel 1 from the outside air and expands and contracts with the lifting and lowering operation of the mounting table 2.

[0014] Three wafer support pins 28a (only two shown) are provided near the bottom surface of the processing vessel 1 so as to protrude upward from a lift plate 28b. The wafer support pins 28a are raised and lowered via the lift plate 28b by a lift mechanism 28 provided below the processing vessel 1. The wafer support pins 28a are inserted into through holes 2a provided in the mounting table 2 at the transfer position, and are capable of protruding and retracting from the upper surface of the mounting table 2. The substrate W is transferred between the transfer mechanism (not shown) and the mounting table 2 by raising and lowering the wafer support pins 28a.

[0015] The shower head 3 supplies a processing gas into the processing vessel 1 in a shower-like manner. The shower head 3 is made of metal, is provided to face the mounting table 2, and has approximately the same diameter as the mounting table 2. The shower head 3 has a main body 31 fixed to the ceiling wall 14 of the processing vessel 1, and a shower plate 32 connected below the main body 31. A gas diffusion space 33 is formed between the main body 31 and the shower plate 32, and a gas introduction hole 36 is provided in the gas diffusion space 33 so as to penetrate the center of the ceiling wall 14 and the main body 31 of the processing vessel 1. An annular protrusion 34 protruding downward is formed on the periphery of the shower plate 32. A gas discharge hole 35 is formed on the inner flat surface of the annular protrusion 34. When the mounting table 2 is in the processing position, a processing space 38 is formed between the mounting table 2 and the shower plate 32, and the upper surface of the cover member 22 and the annular protrusion 34 are close to each other to form an annular gap 39.

[0016] The exhaust unit 4 exhausts the inside of the processing vessel 1. The exhaust unit 4 has an exhaust pipe 41 connected to the exhaust port 13b, and an exhaust mechanism 42 having a vacuum pump, a pressure control valve, etc. connected to the exhaust pipe 41. During processing, gas inside the processing vessel 1 reaches the exhaust duct 13 through the slit 13a, and is exhausted by the exhaust mechanism 42 from the exhaust duct 13 through the exhaust pipe 41.

[0017] The gas supply mechanism (gas supply unit) 5 supplies a processing gas into the processing chamber 1. The gas supply mechanism 5 is connected to the gas inlet 36 via a gas supply line 56.

[0018] The substrate processing apparatus 100 is a capacitively coupled plasma apparatus, in which the mounting table 2 serves as a lower electrode and the shower head 3 serves as an upper electrode. The mounting table 2 serving as the lower electrode is grounded via a capacitor (not shown).

[0019] A high frequency power (hereinafter, also referred to as "RF power") is applied to the shower head 3 serving as the upper electrode by an RF power supply unit 8. The RF power supply unit 8 has a power feed line 81, a matching box 82, and a high frequency power supply 83. The high frequency power supply 83 is a power supply that generates high frequency power. The high frequency power has a frequency suitable for generating plasma. The frequency of the high frequency power is, for example, a frequency within a range of 450 KHz to 100 MHz. The high frequency power supply 83 is connected to the main body 31 of the shower head 3 via the matching box 82 and the power feed line 81. The matching box 82 has a circuit for matching the output reactance of the high frequency power supply 83 with the reactance of the load (upper electrode). Note that, although the RF power supply unit 8 has been described as applying high frequency power to the shower head 3 serving as the upper electrode, the present invention is not limited thereto. The RF power supply unit 8 may be configured to apply high frequency power to the mounting table 2 serving as the lower electrode. In addition, the substrate processing apparatus 100 does not need to be provided with a configuration for applying high frequency power.

[0020] The control unit 9 is, for example, a computer, and includes a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls the operation of the substrate processing apparatus 100. The control unit 9 may be provided inside or outside the substrate processing apparatus 100. When the control unit 9 is provided outside the substrate processing apparatus 100, the control unit 9 can control the substrate processing apparatus 100 by a communication means such as a wired or wireless communication means.

[0021] 1, the substrate processing apparatus 100 has been described as being a single-wafer type substrate processing apparatus 100, but is not limited to this. The substrate processing apparatus may be a batch type substrate processing apparatus in which a large number of substrates W are placed in multiple stages and processed, or may be a semi-batch type substrate processing apparatus.

[0022] <Substrate Processing Method According to First Embodiment> Next, a substrate processing method according to a first embodiment using the substrate processing apparatus 100 will be described with reference to Figs. 2 and 3. Fig. 2 is a flow chart showing an example of the substrate processing method according to the first embodiment. Fig. 3 is a schematic diagram showing an example of a state of a substrate surface in each step of the substrate processing method according to the first embodiment. Here, a case will be described in which a silicon-containing film (first silicon-containing film 330, second silicon-containing film 340) is formed in a recess 315 (see Fig. 3(a)) of a substrate W having the recess 315 formed therein.

[0023] In step S101, the substrate W is prepared. Here, the control unit 9 opens the gate valve 12. The substrate W is transported from the load / unload opening 11 into the processing vessel 1 by a transport device (not shown), and placed on the mounting table 2. When the transport device retreats from the load / unload opening 11, the control unit 9 closes the gate valve 12. Next, the control unit 9 controls the exhaust mechanism 42 to exhaust the inside of the processing vessel 1. Next, the control unit 9 controls the lifting mechanism 24 to raise the mounting table 2 from the transport position to the processing position. The control unit 9 may also control the heater power supply 25 to cause the heater 21 to generate heat, thereby preheating the substrate W placed on the mounting table 2.

[0024] FIG. 3(a) is a schematic diagram showing an example of the state of the substrate surface of the substrate W prepared in step S101. The substrate W has a first film 310 and a second film (base film) 320. The first film 310 is, for example, an insulator film (dielectric film) made of SiN, but is not limited thereto. The first film 310 has a recess 315 such as a trench or a hole. The second film 320 is, for example, an insulator film (dielectric film) made of silicon oxide film (SiO2). The second film 320 is formed so as to cover the entire surface of the first film 310 having the recess 315. In other words, the substrate W prepared in step S101 has a substrate surface of the second film (base film) 320 made of a silicon oxide film (for example, SiO2), and has a recess 315 such as a trench or a hole on the substrate surface.

[0025] In step S102, a first silicon-containing gas (first film formation gas) is supplied to the substrate W. Here, the control unit 9 controls the gas supply mechanism 5 to supply the first silicon-containing gas into the processing space 38. The control unit 9 may be configured to control the RF power supply unit 8 to generate plasma in the processing space 38. As a result, a first silicon-containing film 330 (see FIG. 3(b)) is formed on the substrate surface of the substrate W by CVD (Chemical Vapor Deposition) or plasma-enhanced Chemical Vapor Deposition (Plasma-Enhanced Chemical Vapor Deposition). In other words, the first silicon-containing film 330 is formed on the substrate surface of the second film (base film) 320.

[0026] Here, the first silicon-containing gas may be, for example, monosilane (SiH4), disilane (Si2H6), trisilane (Si3H8), tetrasilane (Si4H 10 ), dichlorosilane (SiH2Cl2), or a mixture of these gases can be used. The first silicon-containing film 330 formed in step S102 is, for example, an amorphous silicon film.

[0027] FIG. 3(b) is a schematic diagram showing an example of the state of the substrate surface of the substrate W on which the first silicon-containing film 330 is formed in step S102. Here, the first silicon-containing film 330 is formed on the second film (undercoat film) 320 of the substrate W. That is, the first silicon-containing film 330 is formed with good coverage on the upper part of the trench and the sidewall and bottom of the recess 315. As a result, the opening width L1 of the recess 335 (see FIG. 3(b)) after the first silicon-containing film 330 is formed is narrower than the opening width L0 of the recess 315 (see FIG. 3(a)) before the first silicon-containing film 330 is formed. That is, step S102 is a process of narrowing the opening width of the recess formed on the substrate surface of the substrate W by supplying the first silicon-containing gas to the substrate W to form the first silicon-containing film 330 on the substrate surface of the substrate W.

[0028] In step S103, a second silicon-containing gas (second film formation gas) and a halogen-containing gas (etching gas) are simultaneously supplied to the substrate W. Here, the control unit 9 controls the gas supply mechanism 5 to supply the second silicon-containing gas and the halogen-containing gas into the processing space 38. As a result, a second silicon-containing film 340 (see FIG. 3(c)) is formed on the substrate surface of the substrate W by CVD. In other words, the second silicon-containing film 340 is formed on the substrate surface of the first silicon-containing film 330.

[0029] Here, the second silicon-containing gas may be, for example, monosilane (SiH4), disilane (Si2H6), trisilane (Si3H8), tetrasilane (Si4H 10 ), dichlorosilane (SiH2Cl2), or a mixture of these gases can be used. The halogen-containing gas can be, for example, chlorine gas (Cl2), hydrogen bromide gas (HBr), fluorine gas (F2), hydrogen iodide gas (HI), or the like. The first silicon-containing gas and the second silicon-containing gas can be the same gas or different gases, and are not limited thereto. The second silicon-containing film 340 formed in step S103 is, for example, an amorphous silicon film.

[0030] 3(c) is a schematic diagram showing an example of a state of the substrate surface of the substrate W on which the second silicon-containing film 340 is formed in step S103. Here, the second silicon-containing film 340 is selectively embedded in the recess 335 (see FIG. 3(b)) with a narrowed opening width.

[0031] Here, after the process of step S102, when the process of step S103 is started, the opening width L1 of the recess 335 is preferably 10 nm or less. This makes it difficult for the halogen-containing gas to reach the inside of the recess 335. On the other hand, the second silicon-containing gas reaches the inside of the recess 335 sufficiently. Therefore, in the recess 335 with the opening width L1 of 10 nm or less, the film formation rate by the second silicon-containing gas becomes dominant over the rate at which the film formation by the halogen-containing gas is suppressed, and the second silicon-containing film 340 is selectively formed. On the other hand, at the top of the side wall of the recess 335, the film formation of the second silicon-containing film 340 is suppressed by the halogen-containing gas. This allows the second silicon-containing film 340 to be embedded in the recess 335 void-free and seamlessly. In a recess with an opening width larger than 10 nm, the second silicon-containing gas and the halogen-containing gas can easily reach the inside of the recess 335 as well as the top of the sidewall of the recess 335 (the upper part of the trench), which also suppresses the formation of the second silicon-containing film 340 in the recess 335. Therefore, it becomes difficult to form the second silicon-containing film 340 in the recess 335.

[0032] In addition, in the process of step S103, the film formation rate at the top of the sidewall of the recess 335 (upper part of the trench) is preferably about 0 nm / min (specifically, within a range of −0.1 nm / min to +1.1 nm / min). In other words, in step S103, the flow rate of the second silicon-containing gas, the flow rate of the halogen-containing gas, the pressure in the processing vessel 1, the temperature of the substrate W, and the like are preferably controlled so that the film formation rate at the top of the sidewall of the recess 335 is about 0 nm / min (specifically, within a range of −0.1 nm / min to +1.1 nm / min). Thereby, the formation of the second silicon-containing film 340 at the top of the sidewall of the recess 335 is suppressed. Meanwhile, the second silicon-containing film 340 is embedded in the recess 335. If the film formation rate at the top of the sidewall of the recess 335 (upper part of the trench) is higher than the above-mentioned range, the opening of the recess 335 may be blocked and voids or the like may be formed before the second silicon-containing film 340 is embedded in the recess 335. If the film formation rate at the top of the sidewall of the recess 335 (upper part of the trench) is lower than the above-mentioned range, the formation of the second silicon-containing film 340 in the recess 335 may be suppressed.

[0033] In this manner, according to the substrate processing method of the first embodiment, the recess 315 can be filled with the silicon-containing film (the first silicon-containing film 330 and the second silicon-containing film 340) in a void-free and seamless manner.

[0034] Moreover, according to the substrate processing method of the first embodiment, when filling the recess 315 with the silicon-containing film, it can be performed in two film forming steps (S102, S103). This improves the controllability of filling compared to the substrate processing method in which the film forming step and the etching step are repeated to fill the recess. Furthermore, it is possible to improve the filling uniformity in the substrate surface and between the substrates. Moreover, according to the substrate processing method of the first embodiment, it is possible to shorten the processing time compared to the substrate processing method in which the film forming step and the etching step are repeated to fill the recess. This improves the processing capacity of the substrate processing apparatus 100. Moreover, according to the substrate processing method of the first embodiment, it is not necessary to insert a step of purging the gas in the processing vessel 1 between the step of forming the first silicon-containing film 330 (S102) and the step of forming the second silicon-containing film 340 (S103). This shortens the processing time.

[0035] Furthermore, according to the substrate processing method of the first embodiment, compared to a substrate processing method in which a silicon-containing film is filled into a recess by repeating a film forming step and an etching step, it is possible to prevent the upper part of the sidewall of the recess 315 of the second film (base film) 320 from being exposed by the etching step. This makes it possible to suppress the formation of microcrystals in the amorphous silicon film. Also, it is possible to suppress damage to the second film (base film) 320 caused by the halogen-containing gas (etching gas).

[0036] <Substrate Processing Method According to Second Embodiment> Next, a substrate processing method according to a second embodiment using the substrate processing apparatus 100 will be described with reference to Fig. 4. Fig. 4 is a flow chart showing an example of the substrate processing method according to the second embodiment.

[0037] In step S201, similarly to step S101, a substrate W is prepared.

[0038] In step S202, a seed gas containing silicon is supplied to the substrate W to form a seed layer (not shown) on the surface of the substrate W. Here, for example, a higher order silane such as aminosilane and / or disilane can be used as the seed gas.

[0039] In step S203, similar to step S102, a first silicon-containing gas (first film formation gas) is supplied to the substrate W to form a first silicon-containing film 330 on a seed layer (not shown), thereby narrowing the opening width of the recess formed on the substrate surface of the substrate W.

[0040] In step S204, similarly to step S103, a second silicon-containing gas (second film formation gas) and a halogen-containing gas (etching gas) are supplied to the substrate W to fill the recess 335 with a second silicon-containing film 340 void-free and seamlessly.

[0041] In this manner, according to the substrate processing method of the second embodiment, the silicon-containing film (first silicon-containing film 330, second silicon-containing film 340) can be embedded in the recessed portion without voids and seamlessly.

[0042] Furthermore, by forming the seed layer, the flatness of the amorphous silicon film (first silicon-containing film 330, second silicon-containing film 340) is improved. Furthermore, by forming the amorphous silicon film (first silicon-containing film 330, second silicon-containing film 340) using the seed layer as a starting point, the incubation time (delay time to start film formation) is shortened.

[0043] <Substrate Processing Method According to Third Embodiment> Next, a substrate processing method according to a third embodiment using the substrate processing apparatus 100 will be described with reference to Figs. 5 and 6. Fig. 5 is a flow chart showing an example of the substrate processing method according to the third embodiment. Fig. 6 is a schematic diagram showing an example of a state of a substrate surface in each step of a substrate processing method according to a sixth embodiment. Here, an example will be described in which a silicon-containing film is formed in the recesses 401, 402, 403 of different opening widths on a substrate W having an undercoat film 400 on which the recesses 401, 402, 403 are formed.

[0044] In step S301, a substrate W is prepared in the same manner as in step S101. Fig. 6(a) is a schematic diagram showing an example of the state of the substrate surface of the substrate W prepared in step S301. The substrate W has an undercoat film 400 in which a plurality of recesses 401, 402, and 403 with different opening widths are formed. In the following description, the order of the opening widths is from narrowest to narrowest: recess 401, recess 402, and recess 403. The undercoat film 400 is an insulator film (dielectric film) formed of a silicon oxide film (SiO2).

[0045] In step S302, similarly to step S102, a first silicon-containing gas (first film formation gas) is supplied to the substrate W. Fig. 6(b) is a schematic diagram showing an example of a state of the substrate surface of the substrate W on which the first silicon-containing film 410 is formed in step S302. As a result, the first silicon-containing film 410 is formed on the substrate surface of the substrate W by CVD or plasma CVD. In addition, the opening width of the recess 401 formed on the substrate surface of the substrate W is narrowed to a predetermined opening width or less (for example, 10 nm or less).

[0046] In step S303, similarly to step S103, a second silicon-containing gas (second film-forming gas) and a halogen-containing gas (etching gas) are supplied to the substrate W. FIG. 6(c) is a schematic diagram showing an example of a state of the substrate surface of the substrate W on which the second silicon-containing film 420 is formed in step S303. As a result, the halogen-containing gas is less likely to reach the recess 401 having a predetermined opening width or less (for example, 10 nm or less), and the second silicon-containing gas reaches the recess 401, so that the second silicon-containing film 420 can be embedded void-free and seamlessly. On the other hand, the second silicon-containing gas and the halogen-containing gas reach the top of the sidewall of the recess 401 and the recesses 402 and 403, so that the formation of the second silicon-containing film 420 is suppressed.

[0047] In step S304, the control unit 9 determines whether or not the process has been repeated a predetermined number of times. If the process has not been repeated a predetermined number of times (S304: NO), the process of the control unit 9 returns to step S302.

[0048] In step S302 for the second time, a first silicon-containing gas (first film formation gas) is supplied to the substrate W. Fig. 6(d) is a schematic diagram showing an example of a state of the substrate surface of the substrate W on which the third silicon-containing film 430 is formed in step S302. As a result, the third silicon-containing film 430 is formed on the substrate surface of the substrate W by CVD or plasma CVD. In addition, the opening width of the recess 402 formed on the substrate surface of the substrate W is narrowed to a predetermined opening width or less (e.g., 10 nm or less).

[0049] In the second step S303, a second silicon-containing gas (second film-forming gas) and a halogen-containing gas (etching gas) are supplied to the substrate W. FIG. 6(e) is a schematic diagram showing an example of a state of the substrate surface of the substrate W on which the fourth silicon-containing film 440 is formed in step S303. As a result, the halogen-containing gas is less likely to reach the recesses 402 having a predetermined opening width or less (for example, 10 nm or less), and the second silicon-containing gas reaches the recesses 402, so that the fourth silicon-containing film 440 can be embedded void-free and seamlessly. On the other hand, the second silicon-containing gas and the halogen-containing gas reach the top of the sidewall of the recesses 402 and the recesses 403, so that the formation of the fourth silicon-containing film 440 is suppressed.

[0050] In step S304, the control unit 9 determines whether or not the process has been repeated a predetermined number of times. If the process has not been repeated a predetermined number of times (S304: NO), the process of the control unit 9 returns to step S302.

[0051] In step S302 for the third time, a first silicon-containing gas (first film formation gas) is supplied to the substrate W. Fig. 6(f) is a schematic diagram showing an example of a state of the substrate surface of the substrate W on which the fifth silicon-containing film 450 has been formed in step S302. As a result, the fifth silicon-containing film 450 is formed on the substrate surface of the substrate W by CVD or plasma CVD. In addition, the opening width of the recess 403 formed on the substrate surface of the substrate W is narrowed to a predetermined opening width or less (e.g., 10 nm or less).

[0052] In step S303 for the third time, a second silicon-containing gas (second film-forming gas) and a halogen-containing gas (etching gas) are supplied to the substrate W. FIG. 6(g) is a schematic diagram showing an example of a state of the substrate surface of the substrate W on which the sixth silicon-containing film 460 has been formed in step S303. As a result, the halogen-containing gas is less likely to reach the recesses 403 having a predetermined opening width or less (for example, 10 nm or less), and the second silicon-containing gas reaches the recesses 403, so that the sixth silicon-containing film 460 can be embedded void-free and seamlessly. On the other hand, the second silicon-containing gas and the halogen-containing gas reach the top of the sidewall of the recesses 403, so that the formation of the sixth silicon-containing film 460 is suppressed.

[0053] In step S304, the control unit 9 determines whether or not the process has been repeated the predetermined number of times. If the process has been repeated the predetermined number of times (S304: YES), the process of the control unit 9 proceeds to step S305.

[0054] In step S305, a first silicon-containing gas (first film formation gas) is supplied to the substrate W. Fig. 6(h) is a schematic diagram showing an example of a state of the substrate surface of the substrate W on which the seventh silicon-containing film 470 is formed in step S305. As a result, the seventh silicon-containing film 470 (see Fig. 6(h)) is formed on the substrate surface of the substrate W by CVD or plasma CVD.

[0055] As described above, according to the substrate processing method of the third embodiment, the process of step S302 and the process of step S303 are set as one cycle for the recesses 401, 402, and 403 having different opening widths, and this cycle is repeated (see S304) to fill the silicon-containing film in the order of narrowest opening width of the recesses 401, 402, and 403. Moreover, according to the substrate processing method of the third embodiment, the silicon-containing film can be filled void-free and seamlessly, as in the substrate processing method of the first embodiment.

[0056] In a substrate processing method in which a silicon-containing film is filled into a recess by repeating a film forming step and an etching step, it is necessary to adjust the film forming conditions in the film forming step and the etching conditions in the etching step for each opening width, and it is difficult to fill the recess with the silicon-containing film void-free and seamlessly. On the other hand, according to the substrate processing method of the third embodiment, it is possible to fill the recess with the silicon-containing film void-free and seamlessly by simply adjusting the film forming time in step S302 (the film forming conditions in step S303 are fixed) for each opening width, out of the steps S302 and S303. Note that the film forming conditions in step S303 do not need to be fixed.

[0057] The substrate processing method according to the present embodiment (first to third embodiments) has been described with reference to the case where a silicon-containing film is formed in the recess of the substrate W, but is not limited thereto. The substrate processing method according to the present embodiment (first to third embodiments) may be applied to the case where a film containing silicon and / or germanium is formed in the recess of the substrate W. That is, a first gas containing silicon and / or germanium may be used as the first film forming gas, and a second gas containing silicon and / or germanium may be used as the second film forming gas. The first film forming gas containing germanium may be any of germane (GeH4), digermane (Ge2H6), and germanium tetrachloride (GeCl4). The second film forming gas containing germanium may be any of germane (GeH4), digermane (Ge2H6), and germanium tetrachloride (GeCl4). The first film forming gas and the second film forming gas may be the same gas. The halogen-containing gas supplied simultaneously with the second deposition gas containing germanium may be any of chlorine gas (Cl2), hydrogen bromide gas (HBr), fluorine gas (F2), and hydrogen iodide gas (HI). This method may also be applied to the formation of a film containing silicon and / or germanium doped with impurities such as B (boron), P (phosphorus), and C (carbon).

[0058] The above describes the substrate processing method according to the present embodiment (first to third embodiments) using the substrate processing apparatus 100. However, the present disclosure is not limited to the above-described embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure as described in the claims. [Explanation of symbols]

[0059] 1 Processing vessel 2. Placement table (substrate support part) 3. Shower head 4 Exhaust section 5 Gas supply mechanism (gas supply section) 8 RF power supply section 9. Control Unit 100 Substrate processing apparatus 310 1st membrane 320 2nd film (base film) 330 First silicon-containing film 340 Second silicon-containing film 315,335,401,402,403 Recess 400 Base film 410 First silicon-containing film 420 Second silicon-containing film 430 Third silicon-containing film 440 Fourth silicon-containing film 450 Fifth silicon-containing film 460 6th Silicon-containing Film 470 7th Silicon-containing Film W substrate L0,L1 opening width

Claims

1. 1. A substrate processing method for forming a film containing silicon and / or germanium in a recess formed in a substrate having an undercoat film, the method comprising the steps of: (a) supplying a first deposition gas containing silicon and / or germanium to the substrate; (b) simultaneously supplying a second deposition gas containing silicon and / or germanium and a halogen-containing gas to the substrate; After the step (a), when the step (b) is started, the opening width of the recess is 10 nm or less. A method for processing a substrate.

2. In the step (b), The deposition rate at the top of the sidewall of the recess is within a range of −0.1 nm / min to +1.1 nm / min. The method of claim 1 .

3. The step (a) is a step of forming a first film containing silicon and / or germanium to narrow an opening width of the recess; The step (b) is a step of filling the recess with a second film containing silicon and / or germanium. The substrate processing method according to claim 2 .

4. The undercoat film is The recesses have a plurality of opening widths different from each other. The substrate processing method according to claim 1 .

5. the step (a) and the step (b) constitute one cycle, and the cycle is repeated to fill the recesses with the film containing silicon and / or germanium in order from the recesses having the narrowest opening width; The substrate processing method according to claim 4 .

6. The undercoat film is a silicon oxide film. The method of claim 1 .

7. The first deposition gas is SiH ４ , Si ２ H ６ , Si ３ H ８ , Si ４ H １０ , SiH ２ C ２ or a mixture of these gases, The second deposition gas is SiH ４ , Si ２ H ６ , Si ３ H ８ , Si ４ H １０ , SiH ２ C ２ or a mixture of these gases, The halogen-containing gas is Cl ２ , HBr, F ２ , HI, The method of claim 1 .

8. The first deposition gas and the second deposition gas are the same gas. The substrate processing method according to claim 7 .

9. A processing vessel; a substrate support for supporting a substrate within the processing chamber; a gas supply unit that supplies a gas into the processing vessel; A control unit, The control unit is (a) supplying a first film formation gas containing silicon and / or germanium to a substrate having an undercoat film with a recess formed therein; (b) simultaneously supplying a second deposition gas containing silicon and / or germanium and a halogen-containing gas to the substrate; After the step (a), when the step (b) is started, the opening width of the recess is 10 nm or less. Substrate processing equipment.

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