Susceptor, semiconductor processing system, and related method

Abstract

To provide an improved substrate support, a semiconductor processing system, and a method for depositing a material layer on a substrate.SOLUTION: A susceptor, a related system, and a related method are described. The susceptor according to the embodiment of the present disclosure is provided with a plurality of contact knobs. Those from a plurality of contact knobs may be honed.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] (CROSS-REFERENCE TO RELATED APPLICATIONS) This application claims priority to and the benefit of U.S. Provisional Patent Application No. 63 / 568,175, filed March 21, 2024, entitled "SUSCEPTORS, SEMICONDUCTOR PROCESSING SYSTEMS, AND RELATED METHODS," the contents of which are incorporated herein by reference in their entirety.

[0002] The present disclosure relates generally to fabricating semiconductor devices, and more particularly to supporting a substrate within a semiconductor processing system during loading and unloading of the substrate into a process chamber, such as a process chamber used to deposit material layers on the substrate during fabrication of a semiconductor device. [Background technology]

[0003] Semiconductor devices, such as integrated circuits and power electronic semiconductor devices, are typically formed by depositing a material layer on a substrate. Material layer deposition is typically accomplished by loading the substrate into a reaction chamber, heating the substrate, and supplying a material layer precursor to the reaction chamber. In the reaction chamber, the material layer precursor is typically flowed across the substrate under selected conditions to deposit a material layer on the substrate. Once the material layer reaches a desired thickness, the flow of material layer precursor into the reaction chamber is stopped, and the substrate is removed from the reaction chamber so that the substrate can undergo further processing.

[0004] In some deposition operations, deposits may occur within a reaction chamber during the deposition of a material layer on a substrate. For example, deposits may occur on the interior surfaces of the reaction chamber walls due to material layer precursors and / or reaction products supplied to the reaction chamber. Material layer precursors may cause deposits to form within the clearances between structures within the reaction chamber, such as structures that are movable relative to one another. Material layer precursors supplied to the reaction chamber may also cause deposits to form between the substrate and the susceptor structure supporting it during the deposition process. While generally manageable, deposits on the interior surfaces of the reaction chamber walls can complicate temperature control within the reaction chamber, for example, by changing the permeability of the reaction chamber walls. Deposits that form within mechanical gaps can impede structure movement, reducing reliability and potentially increasing resistance to movement and / or restraint. Deposits between the substrate and susceptor may mechanically lock the substrate to the susceptor, potentially damaging reaction chamber components or the substrate itself during removal after deposition of a material layer on the substrate.

[0005] Various strategies exist to reduce deposition within a reaction chamber. For example, the flow of material layer precursors can be adjusted to limit deposition on interior surfaces and structures. Purge gases can be supplied to the interior of the reaction chamber to separate material layer precursors and / or reaction products from interior surfaces and structures. Etching agents can also be supplied to the reaction chamber to etch surfaces and structures prone to deposition. However, while flow pattern adjustments are typically used to control the thickness profile of the material layer, the tendency of material layer precursors and / or reaction products to diffuse into the purge gas can limit the effectiveness of purging, and the etchant can potentially damage the reaction chamber and / or substrate.

[0006] While such systems and methods have generally been satisfactory for their intended purposes, there remains a need in the art for improved substrate supports, semiconductor processing systems, and methods for depositing material layers on substrates. The present disclosure provides a solution to this need. Summary of the Invention [Means for solving the problem]

[0007] In some embodiments, provided herein is a susceptor comprising: an annular body extending around an axis of rotation and having a plurality of tang portions extending radially inward toward the axis of rotation; and a disk body having an upper surface disposed on the tang portions of the annular body, the disk body comprising a first plurality of contact knobs distributed circumferentially around the axis of rotation on a first circumference C1, a second plurality of contact knobs distributed circumferentially around the axis of rotation on a second circumference C2, and a third plurality of contact knobs distributed circumferentially around the axis of rotation on a third circumference C3, wherein the second circumference C2 is located radially midway between the first circumference C1 and the third circumference C3 and limits contact between a substrate disposed on the disk body and the upper surface of the disk body.

[0008] In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.1 and at most 0.9.

[0009] In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.3 and at most 0.7.

[0010] In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.2 and at most 0.5.

[0011] In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.5 and at most 0.8.

[0012] In some embodiments, the first plurality of contact knobs comprises a first surface, the second plurality of contact knobs comprises a second surface, and the third plurality of contact knobs comprises a third surface.

[0013] In some embodiments, the first surface, the second surface, and the third surface comprise a refractory ceramic.

[0014] In some embodiments, the refractory ceramic comprises a semiconductor.

[0015] In some embodiments, the semiconductor comprises silicon carbide.

[0016] In some embodiments, at least one of the first surface, the second surface, and the third surface is honed.

[0017] In some embodiments, the first surface, the second surface, and the third surface are all honed.

[0018] In some embodiments, the first surface, the second surface, and the third surface are all unhoned.

[0019] In some embodiments, the first plurality of contact knobs has a first height, the second plurality of contact knobs has a second height, and the third plurality of contact knobs has a third height.

[0020] In some embodiments, the first height, the second height, and the third height are within a 10% error range.

[0021] In some embodiments, the first height is at least 10% greater than at least one of the second height and the third height.

[0022] In some embodiments, the second height is at least 10% greater than at least one of the first height and the third height.

[0023] In some embodiments, the third height is at least 10% greater than at least one of the second height and the first height.

[0024] In some embodiments, the disc body comprises a ceramic coating.

[0025] In some embodiments, the susceptor includes a silicon-containing precoat. The silicon-containing precoat may be formed on a first plurality of contact knobs. The silicon-containing precoat may be formed on a second plurality of contact knobs. The silicon-containing precoat may be formed on a third plurality of contact knobs.

[0026] Further described herein is an apparatus for processing a substrate, the apparatus comprising: a processing chamber configured to accommodate the substrate; a susceptor configured to support the substrate, the susceptor comprising an annular body extending around a rotation axis and having a plurality of tang portions extending radially inward toward the rotation axis; and a disk body having an upper surface located on the tang portions of the annular body, the disk body comprising: a first plurality of contact knobs distributed circumferentially around the rotation axis on a first circumference C1, a second plurality of contact knobs distributed circumferentially around the rotation axis on a second circumference C2, and a third plurality of contact knobs distributed circumferentially around the rotation axis on a third circumference C3, the second circumference C2 being located radially midway between the first circumference C1 and the third circumference C3, limiting contact between a substrate disposed on the disk body and the upper surface of the disk body.

[0027] Further provided herein is a method for forming an epitaxial layer, the method comprising providing an apparatus, the apparatus comprising: a processing chamber configured to accommodate a substrate; a susceptor configured to support the substrate, the susceptor comprising an annular body extending about a rotation axis and having a plurality of tang portions extending radially inward toward the rotation axis; and a disk body having an upper surface disposed on the tang portions of the annular body, the disk body comprising: a first plurality of contact knobs distributed circumferentially about the rotation axis on a first circumference C1; a first plurality of contact knobs distributed circumferentially about the rotation axis on a second circumference C2; ​​and a second plurality of contact knobs distributed circumferentially about the rotation axis on a third circumference C3, the second circumference C2 being located radially midway between the first circumference C1 and the third circumference C3, and configured to contact the substrate disposed on the disk body with the upper surface of the disk body. and placing a substrate on a susceptor, the substrate including a single crystal surface; contacting the substrate with one or more process gases while the substrate is in a processing chamber; and forming an epitaxial layer on the single crystal surface of the substrate, wherein the substrate is supported and curved by at least one of a first plurality of contact knobs, a second plurality of contact knobs, and a third plurality of contact knobs during at least one of placing the substrate on the susceptor, contacting the substrate with the one or more process gases, and forming an epitaxial layer on the substrate, whereby supporting the substrate on one or more of the first plurality of contact knobs, the second plurality of contact knobs, and the third plurality of contact knobs limits contact between the substrate and the top surface of the disk body.

[0028] In some embodiments, the method includes transporting the substrate into a processing chamber.

[0029] In some embodiments, the method includes transporting the substrate out of the processing chamber.

[0030] This summary is provided to introduce some concepts in a simplified form that are described in more detail below in the detailed description of exemplary embodiments of this disclosure. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. [Brief explanation of the drawings]

[0031] [Figure 1] 1 illustrates a susceptor 100 according to one embodiment of the present disclosure. [Figure 2] FIG. 1 shows a gas supply arrangement 12. [Figure 3] FIG. 1 shows a chamber arrangement 14. [Figure 4] FIG. 4 illustrates an exemplary susceptor 400. [Figure 5] FIG. 4 is a cross-sectional view of a susceptor 400 according to one embodiment of the present disclosure. [Figure 6] FIG. 10 illustrates how damage to the silicon wafer can be avoided by using a susceptor with honed contact knobs. [Figure 7] FIG. 1 illustrates a layer of material being deposited on a wafer supported on a susceptor. [Figure 8] FIG. 8 illustrates a curved substrate 820 on a susceptor 810 according to an embodiment of the present disclosure. [Figure 9] 9A and 9B illustrate an embodiment of a susceptor 900. FIG. [Figure 10] 10A-10C illustrate cross sections of contact knobs 1001, 1002, and 1003 according to an embodiment of the present disclosure. [Figure 11] FIG. 1 illustrates a method according to an embodiment of the present disclosure.

[0032] It will be understood that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0033] While certain specific embodiments and examples are disclosed below, it will be understood by those skilled in the art that the scope of the invention extends beyond the specifically disclosed embodiments and / or uses of the invention, and obvious variations and equivalents thereof. It is therefore not intended that the scope of the disclosed invention should be limited by the specific disclosed embodiments described below.

[0034] As used herein, "substrate" refers to any material having a surface onto which a material can be deposited. The substrate may include a bulk material, such as a semiconductor material like silicon (e.g., single crystal silicon). The substrate may include a wafer, such as a 300 millimeter wafer, and may be formed from a semiconductor material such as silicon. The substrate may include one or more layers overlying the bulk material. The one or more layers overlying the bulk material may include patterns including various topologies, such as trenches, vias, lines, and the like, formed in or on the material layer.

[0035] The examples presented in this disclosure are not intended to be actual manifestations of any particular materials, structures, or devices, but merely conceptual representations used to describe embodiments of the present disclosure.

[0036] The specific implementations shown and described are illustrative of the present invention and its best mode and are in no way intended to limit the scope of aspects and implementations. Also, for the sake of brevity, conventional manufacturing, association, preparation, and other functional aspects of the systems may not be described in detail. Furthermore, connecting lines shown in the various figures are intended to represent example functional relationships and / or physical couplings between the various elements. Many alternative or additional functional relationships or physical connections may be present in an actual system and / or may not be present in some embodiments.

[0037] The terms used herein are for the purpose of describing particular embodiments and are not intended to limit the disclosure. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms unless the context clearly dictates otherwise. It will be further understood that the terms "comprises" and / or "comprising," as used in this disclosure, specify the presence of stated structures, integers, steps, operations, components, and / or ingredients, but do not exclude the presence or addition of one or more other structures, integers, steps, operations, components, ingredients, and / or groups thereof.

[0038] The term "about" is intended to include the degree of error associated with the measurement of a particular quantity based on the equipment available at the time of filing. For example, "about" may include a range of ±8%, 5%, or 2% of a given value, or variations thereof, based on the technology and concepts related to the particular value or range, and as understood by one skilled in the art. The term "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any aspect or embodiment described herein as "exemplary" should not necessarily be construed as preferred or advantageous over other aspects or embodiments. The terms "at least one" and "one or more" are understood to include any integer greater than or equal to one, i.e., 1, 2, 3, 4, etc. The term "plurality" is understood to include any integer greater than or equal to two, i.e., 2, 3, 4, 5, etc. The term "connected" can include both an indirect "connection" and a direct "connection."

[0039] In some embodiments, "unhoned" may mean one or more of "unhoned," "raw," "pristine," and "as-deposited."

[0040] It will be understood that the configurations and / or approaches described in this disclosure are exemplary in nature, and that these specific embodiments or examples are not to be construed in a limiting sense, as numerous variations are possible. The specific routines or methods described in this disclosure may represent one or more of any number of process strategies. As such, the various illustrated operations may be performed in the order illustrated, in other orders, or may be omitted in some cases.

[0041] The subject matter of this disclosure includes all novel and non-obvious combinations and subcombinations of the various processes, systems, and configurations, and other features, functions, operations and / or properties disclosed in this disclosure, as well as all equivalents thereof.

[0042] Described herein are susceptors, related apparatus, and related methods.

[0043] An apparatus according to an embodiment of the present disclosure can be used to process a substrate and includes a process chamber configured to accommodate a substrate and a susceptor as described herein. The susceptor, or a portion thereof, can be disposed within the process chamber and configured to support the substrate, for example, during at least one of loading, processing, and unloading of the substrate. Such an embodiment of the apparatus can be used to process the substrate, for example, to form a layer, such as an epitaxial layer, on the substrate. An exemplary method can include placing a substrate including a surface, for example, a single-crystal surface, on the susceptor. The method can further include contacting the substrate with one or more process gases. Thus, a layer, for example, an epitaxial layer, can be formed on the surface. It should be understood that exemplary processes for forming layers, such as epitaxial layers, are known in the art.

[0044] In addition to or in the alternative to one or more of the above features, depositing the material layer may include heating the substrate to a material layer deposition temperature of from about 500°C to about 1200°C, or from about 700°C to about 1200°C, or from about 900°C to about 1200°C.

[0045] In addition to or in the alternative to one or more of the above features, depositing the layer of material may include pressurizing the interior of the chamber body containing the susceptor to a deposition pressure of between about 1 torr and about 760 torr, or between about 20 torr and about 760 torr, or between about 50 torr and about 760 torr.

[0046] Reference is now made to the drawings, in which like reference numerals identify similar structural features or aspects of the present disclosure. For purposes of explanation and illustration, and not by way of limitation, a partial view of one example of a metal article according to the present disclosure is shown in FIG. 1 and generally designated by reference character 100. The systems and methods of the present disclosure may be used to deposit material layers on a substrate during the manufacture of semiconductor devices, such as before, during, and / or after the deposition of a thick epitaxial film on the substrate, and are not limited to the manufacture of power electronic devices, or generally to the deposition of any particular type of material layer.

[0047] 1, there is shown a semiconductor processing system 10. The semiconductor processing system 10 includes a gas supply arrangement 12 and a chamber arrangement 14 including a susceptor 100. The semiconductor processing system 10 also includes an exhaust arrangement 16 and a controller 18. While a particular arrangement of the semiconductor processing system 10 is shown and described herein, it is important to understand and appreciate that semiconductor processing systems having other arrangements can also benefit from the present disclosure.

[0048] The gas supply arrangement 12 is connected to the chamber arrangement 14 and configured to supply a material layer process gas 20 to the chamber arrangement 14. The chamber arrangement 14 houses a susceptor 100 and is configured to fluidly couple the susceptor 100 to the gas supply arrangement 12 to receive the material layer process gas 20 from the gas supply arrangement 12 and to supply the material layer process gas 20 to the upper surface 6 of the substrate 2. The exhaust arrangement 16 is connected to the chamber arrangement 14 and fluidly coupled to the susceptor 100 and configured to convey a flow of residual material layer precursors and / or reaction products 26 exiting the chamber arrangement 14 to an external environment 24 outside the semiconductor processing system 10. The controller 18 is operably connected to the semiconductor processing system 10 and configured to control the deposition of a material layer 4 on the upper surface 6 of the substrate 2. In certain embodiments, the material layer 4 may be an epitaxial material layer. The material layer 4 may include silicon (e.g., include, consist of, or consist essentially of silicon). Material layer 4 may be a thick epitaxial layer. Material layer 4 may have a thickness of about 40 microns to about 100 microns, or about 60 microns to about 100 microns, or about 80 microns to about 100 microns.

[0049] Referring to FIG. 2 , the gas supply arrangement 12 is illustrated. The gas supply arrangement 12 includes a first precursor source 30, an optional second precursor source 32, a carrier / purge gas source 34, and an optional additional source 36. The first precursor source 30 is coupled to the chamber arrangement 14 by a precursor conduit 40 and is configured to supply a first precursor 38 to the chamber arrangement 14. In certain embodiments, the first precursor source 30 may be further connected to the chamber arrangement 14 by a first precursor valve. The first precursor valve may comprise a manual actuator, a pneumatic actuator, or an electric actuator such as a solenoid. The first precursor valve may be operably associated with a controller, such as the controller 18. The first precursor valve may be incorporated into a flow control device, such as a first precursor mass flow controller (MFC) device. In certain embodiments, the first precursor 38 may include a silicon-containing precursor. Non-limiting examples of suitable silicon-containing precursors include silane (SiH4) and halosilanes, for example, chlorosilanes such as dichlorosilane (H2SiCl2), and trichlorosilane (HCl3Si).

[0050] The optional second precursor source 32 may be connected to the chamber arrangement 14 by a precursor conduit 40 and configured to supply a second precursor 42 to the chamber arrangement 14. In certain embodiments, the optional second precursor source 32 may be further connected to the chamber arrangement 14 by a second precursor valve. The second precursor valve may comprise a manual actuator, a pneumatic actuator, or an electric actuator. The second precursor valve may be associated with a controller, such as the controller 18. The second precursor valve may be integrated into a flow control device, such as a second precursor MFC device. According to certain embodiments, the second precursor 42 may include a dopant or alloying element. Non-limiting examples of suitable dopants or alloying elements include germanium (Ge), arsenic (As), phosphorus (P), and / or boron (B).

[0051] The carrier / purge gas source 34 is connected to the chamber arrangement 14 by a precursor conduit 40 and is configured to supply a carrier / purge gas 44 to the chamber arrangement 14. In certain embodiments, the carrier / purge gas source 34 may be connected to the chamber arrangement 14 by a carrier / purge gas valve. The carrier / purge gas valve may comprise a manual actuator, an electric actuator, or a pneumatic actuator. The carrier / purge gas valve may be associated with a controller, such as the controller 18. The carrier / purge gas valve may be integrated into a flow control device, such as a carrier / purge gas MFC device. According to certain embodiments, the carrier / purge gas 44 may include hydrogen (H) gas. It is contemplated that the carrier / purge gas 44 may include an inert gas. Non-limiting examples of suitable inert gases include nitrogen (N), argon (Ar), helium (He), and mixtures thereof.

[0052] The optional additional source 36 may be connected to the chamber arrangement 14 by any additional conduit and may be configured to supply the additional gas 22 to the chamber arrangement 14. In certain embodiments, the optional additional source 36 may be coupled to the chamber arrangement 14 by an additional gas valve. The additional gas valve may comprise a manual actuator, an electric actuator, or a pneumatic actuator. The additional gas valve may be operably associated with a controller, such as the controller 18. Furthermore, the gas valve may be incorporated into a flow control device, such as an etchant MFC device. In certain embodiments, the optional additional source 36 may be further connected to the chamber arrangement 14 by a precursor conduit 40.

[0053] The controller 18 includes a device interface 50, a processor 52, a user interface 54, and a memory 56. The device interface 50 is connected to a wired or wireless link 28, which couples to one or more of the gas supply arrangement 12, the chamber arrangement 14, and the exhaust system 16. The processor 52 is connected to the device interface 50 and operably connected to the user interface 54, and is configured to provide and receive user output and user input therethrough and to communicate with the memory 56. The memory 56 includes a non-transitory machine-readable medium having a plurality of program modules 58 stored thereon that, when read by the processor 52, cause the processor 52 to perform particular operations, including operations of a material layer deposition method, as described herein. While the gas supply arrangement 12 and the controller 18 are shown and described herein as having particular arrangements, it is to be understood and appreciated that semiconductor processing systems having gas supply arrangements and / or controllers having different arrangements can also benefit from the present disclosure.

[0054] 3, a chamber arrangement 14 is shown. The chamber arrangement 14 includes an inlet flange 60, a chamber body 62, and an exhaust flange 64. The chamber arrangement 14 also includes a chamber array, an upper lamp array 66, a lower lamp array 68, and a partition 70. The chamber arrangement 14 further includes a support member 72, a shaft member 74, and a lift and rotate module 76. While a particular arrangement of the chamber arrangement 14 is shown and described herein, it is to be understood and appreciated that chamber arrangements having other arrangements can benefit from the present disclosure.

[0055] The chamber body 62 is formed from a transparent material 82 and has an inlet end 84 and an outlet end 86 that is longitudinally opposite to the general direction of fluid flow through the chamber body 62. The chamber body 62 also has an interior 88, which is hollow. The inlet flange 60 is connected to the inlet end 84 of the chamber body 62, and the gas supply arrangement 12 (shown in FIG. 1 ) is fluidly coupled to the interior 88 of the chamber body 62. The exhaust flange 64 is connected to the exhaust end 86 of the chamber body 62 and is fluidly coupled to the interior 88 of the chamber body 62. The exhaust flange 64 is intended to fluidly couple the interior 88 of the chamber body 62 to the gas supply arrangement 12 and the exhaust arrangement 16 (shown in FIG. 1 ) therethrough. In certain embodiments, the transparent material 82 forming the chamber body 62 may be a ceramic material. An example of a suitable transparent material is quartz.

[0056] The upper lamp array 66 is supported above the chamber body 62 and is configured to heat the substrate 2 while it is resting on the susceptor 100. In certain embodiments, the upper lamp array 66 may include one or more linear lamps. The upper lamp array 66 may include filament-type lamps. The upper lamp array 66 may include one or more linear lamps extending longitudinally above the chamber body 62 between the inlet end 84 and the exhaust end 86 of the chamber body 62. According to certain examples, the upper lamp array 66 may include a plurality of linear lamps. The plurality of linear lamps may be laterally spaced apart from one another between the longitudinally opposed inlet end 84 and the exhaust end 86 of the chamber body 62. The plurality of linear lamps may extend laterally across the chamber body 62 between laterally opposed sides of the chamber body 62.

[0057] The lower lamp array 68 is similar to the upper lamp array 66 and is further supported below the chamber body 62. In certain embodiments, the lower lamp array 68 may include one or more linear lamps. The more linear lamps may be substantially orthogonal to the one or more linear lamps of the upper lamp array 66. According to certain embodiments, the lower lamp array 68 may include one or more spot lamps. The one or more spot lamps may be oriented upward toward the chamber body 62. The one or more spot lamps may be offset from and oblique to the axis of rotation 98.

[0058] The divider 70 is disposed within an interior 88 of the chamber body 62 and divides the interior 88 (with respect to gravity) into an upper chamber 90 and a lower chamber 92. The divider 70 is contemplated to include a divider opening 94. The divider opening 94 extends through the thickness of the divider 70 and fluidly connects the upper surface of the divider 70 to the lower surface of the divider 70. The divider opening 94 further couples the upper chamber 90 to the lower chamber 92 of the chamber body 62. In certain embodiments, the divider 70 may be formed from an opaque material 96. The opaque material 96 may have a lower transmittance to electromagnetic radiation within the wavelengths emitted by the upper lamp array 66 and / or the lower lamp array 68 than the transmittance of the transparent material 82 forming the chamber body 62. Examples of suitable opaque materials include graphite and pyrolytic carbon materials. According to certain examples, the divider 70 may be (at least partially) encapsulated with a coating. Examples of suitable coatings include, but are not limited to, ceramic coatings, such as silicon carbide (SiC) coatings.

[0059] The susceptor 100 is configured to support a substrate during at least one of substrate transfer and deposition of a material layer on the substrate 2, e.g., deposition of material layer 4 on the substrate 2 (shown in FIG. 1 ). In this regard, it is contemplated that the susceptor 100 is disposed within the interior 88 of the chamber body 62 and supported for rotation R about an axis of rotation 98 relative to the chamber body 62. More specifically, the susceptor 100 is disposed within the partition opening 94 and supported (at least partially) within the partition opening 94 for rotation R about the axis of rotation 98 relative to the chamber body 62. It is further contemplated that the susceptor 100 is operatively associated with the lift and rotate module 76. In the illustrated example, the susceptor 100 is coupled to the lift and rotate module 76 by a support member 72 and a shaft member 74, where the support member 72 is disposed within the lower chamber 92 and is rotationally fixed relative to the susceptor 100, and the shaft member 74 is rotationally fixed relative to the support member 72 and extends through the lower wall of the chamber body 62 for operative association with the lift and rotate module 76 in the external environment 24. The support member 72 and / or the shaft member 74 may be formed from a transparent material. An example of a suitable transparent material is quartz. As will be appreciated by those skilled in the art from this disclosure, in other embodiments, the susceptor 100 may be supported by different support arrangements and remain within the scope of this disclosure.

[0060] An exemplary susceptor 400, illustrating a top view of the susceptor 400 according to one embodiment of the present disclosure, is described with reference to FIG. 4. The susceptor 400 includes an annular body 410 and a disk body 420. The annular body 410 may extend about an axis of rotation 401, as described herein. The annular body may include a plurality of tang portions (shown elsewhere) extending radially inward toward the axis of rotation.

[0061] The disk body 420 is mounted on the tongue portion 411 of the annular body 410. The disk body has an upper surface. The disk body 420 includes a first plurality of contact knobs 431 circumferentially distributed around the axis of rotation on a first circumference C1. The disk body 420 further includes a second plurality of contact knobs 432 circumferentially distributed around the axis of rotation on a second circumference C2. The disk body 420 further includes a third plurality of contact knobs 433 circumferentially distributed around the axis of rotation on a third circumference C3. The second circumference C2 is located radially midway between the first circumference C1 and the third circumference C3, limiting contact between a substrate disposed on the disk body 420 and the upper surface of the disk body. This can limit or avoid damage to the substrate.

[0062] For example, one or more contact knobs can be disposed on a first circumference C1. The first circumference can have a radius of at least 0 mm and up to 20 mm. The contact knobs on the first circumference can have a height greater than 0 mm and less than 0.3 mm.

[0063] For example, six or more contact knobs can be arranged on the second circumference C2. The second circumference can have a radius of at least 80 mm and up to 100 mm. The contact knobs on the second circumference can have a height greater than 0 mm and less than 0.3 mm.

[0064] For example, six or more contact knobs can be arranged on the third circumference C3. The third circumference can have a radius of at least 240 mm and at most 270 mm. The contact knobs on the second circumference can have a height greater than 0 mm and less than 0.3 mm.

[0065] Of course, other arrangements of the contact knobs are possible, for example the contact knobs may be arranged in a lattice such as a simple square lattice, a triangular lattice, a face-centered cubic lattice or a hexagonal lattice.

[0066] Any suitable number of contact knobs may be disposed on the first circumference C1, for example, at least 1 and up to 20 or less contact knobs may be disposed on the first circumference, or at least 2 and up to 5 contact knobs may be disposed on the first circumference, or at least 5 and up to 10 contact knobs may be disposed on the first circumference, or at least 10 and up to 20 contact knobs may be disposed on the first circumference.

[0067] Any suitable number of contact knobs may be disposed on the second circumference C2, for example, at least 1 and up to 20 contact knobs may be disposed on the second circumference, or at least 2 and up to 5 contact knobs may be disposed on the second circumference, or at least 5 and up to 10 contact knobs may be disposed on the second circumference, or at least 10 and up to 20 contact knobs may be disposed on the second circumference.

[0068] Any suitable number of contact knobs may be disposed on the third circumference C3, such as at least 1 and up to 20 contact knobs on the third circumference, or at least 2 and up to 5 contact knobs on the third circumference, or at least 5 and up to 10 contact knobs on the third circumference, or at least 10 and up to 20 contact knobs on the third circumference.

[0069] 9, three contact knobs 913 can be arranged on a first circumference, six contact knobs 923 can be arranged on a second circumference, and six contact knobs 933 can be arranged on a third circumference. Such a susceptor 900 can stably support a substrate while minimizing or avoiding damage, hot spots, cold spots, etc.

[0070] In some embodiments, the contact knobs 913 on the first circumference can be evenly spaced, i.e., spaced equidistantly on radial lines at equal angular intervals. For example, there can be three contact knobs 913 on the first circumference, radially spaced at 120 degree intervals.

[0071] In some embodiments, the contact knobs 923 on the second circumference can be evenly spaced, i.e., spaced equidistantly along radial lines spaced at equal angles apart. For example, six contact knobs 923 can be spaced 60 degrees apart along radial lines on the second circumference.

[0072] In some embodiments, the contact knobs 933 on the third circumference may be equally spaced, i.e., equally spaced along radial lines spaced at equal angular intervals. For example, six contact knobs 933 may be arranged on the third circumference in radial lines spaced at 60 degree intervals.

[0073] In some embodiments, as shown in FIG. 9, the two contact knobs 933 on the third circumference and the one contact knob 923 on the second circumference are positioned at the vertices of an equilateral triangle.

[0074] In some embodiments, as shown in FIG. 9, the two contact knobs 923 on the second circumference and the one contact knob 913 on the first circumference are positioned at the vertices of an equilateral triangle.

[0075] In some embodiments, a silicon-containing precoat 935 may be formed on a susceptor, such as susceptor 900. For example, the silicon-containing precoat 935 may be formed on the first plurality of contact knobs 913, the second plurality of contact knobs 923, and the third plurality of contact knobs 933.

[0076] In some embodiments, the thickness of the silicon-containing precoat 935 can range from about 500 nanometers to about 5 microns, or from about 500 nanometers to about 3 microns, or from about 500 nanometers to about 1.5 microns. Advantageously, such silicon-containing precoats (either or both) can separate relatively rough surfaces (such as silicon carbide deposits) and / or contact knobs on the susceptor surface from the backside of a wafer or substrate placed on the susceptor, thereby limiting (or eliminating) potential damage to the wafer or substrate caused by contact with the rough surfaces.

[0077] Advantageously, susceptors according to embodiments of the present disclosure allow for adequate support of a substrate in a stable manner with as few contact knobs as possible, thereby minimizing damage to the substrate. Further advantageously, by forming a silicon-containing precoat 935 on the susceptor, the multiple contact points formed on the susceptor can limit the tolerances (e.g., increase the tolerances to accommodate additional variability) of honing processes employed to polish known surfaces, simplifying susceptor manufacturing.

[0078] Contact knobs 431, 432, 433 can be positioned in any suitable location. Therefore, various relative positions of first circumference C1, second circumference C2, and third circumference C3 are possible. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.1 and at most 0.9. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.2 and at most 0.8. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.3 and at most 0.7. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.4 and at most 0.6. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.2 and at most 0.5. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.3 and at most 0.4. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.5 and at most 0.8. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.5 and at most 0.9. In some embodiments, (C2-C1) / (C3-C1) is equal to at least 0.6 and at most 0.7.

[0079] FIG. 8 illustrates how contact knobs 811 minimize the contact area between a curved substrate 820, such as a wafer, and susceptor 810.

[0080] Figure 5 shows a cross section of a susceptor 400 according to an embodiment of the present disclosure already described with reference to Figure 4. The susceptor 400 extends around a rotation axis 401 and includes the aforementioned annular body 410 and a disk body 420. The disk body 420 is mounted on a tang portion 411 included in the annular body 410.

[0081] The disc body 420 according to an embodiment of the present disclosure may have a front surface 402 and a rear surface 403. The rear surface 403 may contact the tongue portion. The front surface 402 may include contact knobs 431, 432, and 433.

[0082] In some embodiments, the first plurality of contact knobs comprises a first surface, the second plurality of contact knobs comprises a second surface, and the third plurality of contact knobs comprises a third surface.

[0083] In some embodiments, at least one of the first surface, the second surface, and the third surface is honed. In some embodiments, all of the first surface, the second surface, and the third surface are honed. In some embodiments, all of the first surface, the second surface, and the third surface are not honed. In some embodiments, the first surface is honed and the second and third surfaces are not honed. In some embodiments, the second surface is honed and the first and third surfaces are not honed. In some embodiments, the third surface is honed and the first and second surfaces are not honed. In some embodiments, the first and second surfaces are honed and the third surface is not honed. In some embodiments, the first and third surfaces are honed and the second surface is not honed. In some embodiments, the second and third surfaces are honed and the first surface is not honed.

[0084] In some embodiments, one or more of the first, second, and third surfaces can be polished. Nevertheless, honed contact knobs may be preferred over polished contact knobs. In fact, a substrate on a honed contact knob susceptor exhibits superior friction compared to a substrate on a polished contact knob susceptor. Compared to a non-honed, i.e., unhoned, contact knob susceptor, a honed contact knob susceptor causes less damage to the substrate. Therefore, it is preferred that the contact knobs of susceptors according to embodiments of the present disclosure are honed.

[0085] FIG. 6 illustrates that, according to one embodiment of the present disclosure, damage to substrates, particularly silicon wafers, can be avoided by using a susceptor comprising a honed surface, such as a honed silicon carbide surface. Specifically, severe substrate damage, including dents, 601 is shown, caused by the contact knob with an unhoned silicon carbide surface, which contains sharp, damaging crystallites. The use of the honed contact knob reduces substrate damage 602, specifically causing only minor scratches. This correlates with the removal of sharp crystallite features from the honed, hardened silicon carbide surface. While not being bound by any particular theory or mode of operation, it is believed that the honed silicon carbide surface may limit the size of backside scratches or nodules, such as those shown in 601, and limit the tendency of such features to cause slip line (e.g., crystalline) defects that would otherwise tend to propagate throughout the bulk material forming the material layer deposited on the substrate. The reduced tendency of such defects to induce slip line defects allows for the use of higher load and / or unload temperatures, such as temperatures of about 650° C. to about 750° C., rather than temperatures of about 500° C. to about 600° C. Advantageously, the higher load and / or unload temperatures allow for higher throughput than would otherwise be possible.

[0086] In some embodiments, contact knobs included in susceptors according to embodiments of the present disclosure have arcuate surfaces. In some embodiments, the contact knobs have convex surfaces. For example, the contact knobs may have hemispherical, parabolic, or geode-shaped surfaces. Exemplary cross sections of contact knobs 1001, 1002, and 1003 are shown in FIG. 10.

[0087] In some embodiments, the disk body includes a ceramic coating, such as ceramic coating 1001 A, ceramic coating 1002 A, and / or ceramic coating 1003 A. For example, the ceramic coating can include a refractory ceramic.

[0088] In some embodiments, the contact knob includes, i.e., is covered with, a ceramic coating.

[0089] In some embodiments, at least one of the first surface, the second surface, and the third surface comprises a refractory ceramic. In some embodiments, the first surface, the second surface, and the third surface comprise a refractory ceramic. In some embodiments, the first surface comprises a refractory ceramic. In some embodiments, the second surface comprises a refractory ceramic. In some embodiments, the third surface comprises a refractory ceramic.

[0090] In some embodiments, the refractory ceramic comprises a semiconductor. In some embodiments, the refractory ceramic comprises a compound semiconductor. In some embodiments, the refractory ceramic comprises a polycrystalline semiconductor.

[0091] In some embodiments, the refractory ceramic comprises silicon carbide.

[0092] In some embodiments, a silicon-containing precoat may be overlaid on the ceramic coating.

[0093] In some embodiments, the susceptors described herein may include a disk body defined by a bulk graphite material. The bulk graphite material may be encapsulated by a coating. The coating may be a silicon carbide coating.

[0094] In some embodiments, the first plurality of contact knobs has a first height, the second plurality of contact knobs has a second height, and the third plurality of contact knobs has a third height. The height of the contact knob may refer to a characteristic size of the contact knob in the direction of the rotation axis of the susceptor.

[0095] In some embodiments, the contact knobs from the first plurality have the same height, in some embodiments, the contact knobs from the second plurality have the same height, and in some embodiments, the contact knobs from the third plurality have the same height.

[0096] It should be understood that the term "same height" may refer to a certain height within an error range of, for example, 10, 5, 2, 1, 0.5, 0.2, or 0.1 percent.

[0097] In some embodiments, the first height, the second height, and the third height are equal within a margin of error of 10, 5, 2, 1, 0.5, 0.2, or 0.1%.

[0098] In some embodiments, the first height is at least 10%, e.g., 20, 30, 40, or 50%, higher than at least one of the second height and the third height. The second height and the third height may be equal. Alternatively, the second height and the third height may be different, e.g., the second height may be lower than the first height, e.g., at least 10% to up to 50% lower. In some embodiments, the second height may be higher than the third height, e.g., at least 10% to up to 50% higher.

[0099] In some embodiments, the second height is at least 10% greater than at least one of the first height and the third height, e.g., 20, 30, 40, or 50% greater. The first height and the third height may be equal. Alternatively, the first height and the third height may be different, e.g., the first height may be less than the second height, e.g., at least 10% to up to 50% less. In some embodiments, the first height may be greater than the third height, e.g., at least 10% to up to 50% greater than the third height.

[0100] In some embodiments, the third height is at least 10% greater than at least one of the second height and the first height, such as 20%, 30%, 40%, or 50% greater. The first height and the second height may be equal. Alternatively, the first height and the second height may be different, e.g., the first height may be less than the second height, such as at least 10% to at most 50% less. In some embodiments, the first height may be greater than the second height, such as at least 10% to at most 50% greater.

[0101] In some embodiments, at least one of the first height, the second height, and the third height is at least 100 nanometers to 5 mm, or at least 100 nanometers to 200 nanometers, or at least 200 nanometers to 500 nanometers, or at least 500 nanometers to 1 micrometer, or at least 1 micrometer to 2 micrometers, or at least 2 micrometers to 5 micrometers, or at least 5 micrometers to 10 micrometers, or at least 10 micrometers to 20 micrometers, or at least 20 micrometers to 50 micrometers, or at least 50 micrometers to 100 micrometers, or at least 100 micrometers to 200 micrometers, or at least 200 micrometers to 500 micrometers, or at least 500 micrometers to 1 millimeter, or at least 1 millimeter to 2 millimeters, or at least 2 millimeters to 5 millimeters.

[0102] As shown in FIG. 7, material layer deposition on a substrate is accomplished by rotating a susceptor 100 (and substrate 2) about a rotation axis 98 using a lift-and-rotate module 76 (shown in FIG. 3), heating the substrate 2 to a predetermined material layer deposition temperature using an upper lamp array 66 (shown in FIG. 3) and a lower lamp array 68 (shown in FIG. 3), and supplying a material layer precursor gas 20 to a chamber arrangement 14 (shown in FIG. 1) using a gas supply arrangement 12 (shown in FIG. 1). A chamber body 62 flows the material layer precursor gas 20 over an upper surface 6 of the substrate 2, and thermal and pressure conditions within an upper chamber 90 of the chamber body 62 deposit a material layer 4 on the upper surface 6 of the substrate 2, with residual precursors and / or reaction products 26 (shown in FIG. 1) associated with the deposition being conveyed to an exhaust arrangement 16 (shown in FIG. 1). When the material layer 4 reaches a predetermined thickness, the flow of material layer precursor gas 20 to the chamber arrangement 14 by the gas supply arrangement 12 stops, rotation of the susceptor 100 by the lift-rotate module 76 stops, and heating of the substrate 2 by the upper lamp array 66 and the lower lamp array 68 stops.

[0103] In some embodiments, referring to FIG. 11 , a susceptor described herein can be used in a method for forming an epitaxial layer. The method can include providing 1110 an apparatus comprising a processing chamber configured to accommodate a substrate. The apparatus further includes a susceptor configured to support a substrate. The susceptor includes an annular body extending around an axis of rotation. The annular body has a plurality of tang portions extending radially inward toward the axis of rotation. The susceptor further includes a disk body having an upper surface resting on the tang portions of the annular body. The disk body has a first plurality of contact knobs distributed circumferentially around the axis of rotation on a first circumference C1, a second plurality of contact knobs distributed circumferentially around the axis of rotation on a second circumference C2, and a third plurality of contact knobs distributed circumferentially around the axis of rotation on a third circumference C3. The second circumference is located radially midway between the first and third circumferences to limit contact between a substrate disposed on the disk body and the upper surface of the disk body. The method includes forming 1120 a precoat on a susceptor. The method further includes transferring 1130 a substrate having a single crystal surface into the processing chamber, e.g., while the processing chamber is at a temperature between about 650°C and about 750°C. The method further includes loading 1140 the substrate onto the susceptor. The method further includes contacting 1150 the substrate with one or more process gases. The method further includes bending 1160 the substrate and supporting 1170 the substrate with one or more of the first plurality of contact knobs, the second plurality of contact knobs, and the third plurality of contact knobs during forming 1180 an epitaxial layer on the single crystal surface of the substrate. The method further includes transferring 1190 the substrate out of the processing chamber, e.g., while the substrate is at a temperature between about 650°C and about 750°C. In certain embodiments, forming 1180 the epitaxial layer includes forming 1180 the epitaxial layer at a high temperature, for example, between about 800°C and about 120°C, to improve throughput of the processing chamber compared to processing chambers using this relatively high load and unload temperature time limit required to heat the substrate and / or lower load and unload temperatures.Contact between the substrate and the disk body of the susceptor may be achieved by supporting the substrate on at least one of the first plurality of contact knobs, the second plurality of contact knobs, and the third plurality of contact knobs, which advantageously minimize contact between the substrate and the top surface of the disk body.

Claims

1. A susceptor, an annular body extending about an axis of rotation and having a plurality of tang portions extending radially inward toward the axis of rotation; a disk body having an upper surface disposed on a tang portion of the annular body, a first plurality of contact knobs circumferentially distributed about the axis of rotation on a first circumference C1; a second plurality of contact knobs circumferentially distributed about the axis of rotation on a second circumference C2; a third plurality of contact knobs circumferentially distributed about the axis of rotation on a third circumference C3; and a disk body comprising: The second circumference (C2) is located radially midway between the first circumference (C1) and the third circumference (C3), limiting contact between a substrate disposed on the disk body and the upper surface of the disk body.

2. 2. The susceptor of claim 1, wherein (C2-C1) / (C3-C1) is equal to at least 0.1 and at most 0.

9.

3. The susceptor of claim 2, wherein (C2-C1) / (C3-C1) is equal to at least 0.3 and at most 0.

7.

4. The susceptor of claim 2, wherein (C2-C1) / (C3-C1) is equal to at least 0.2 and at most 0.

5.

5. The susceptor of claim 2, wherein (C2-C1) / (C3-C1) is equal to at least 0.5 and at most 0.

8.

6. The susceptor of claim 1 , wherein the first plurality of contact knobs comprises a first surface, the second plurality of contact knobs comprises a second surface, and the third plurality of contact knobs comprises a third surface.

7. The susceptor of claim 6 , wherein the first surface, the second surface, and the third surface comprise a refractory ceramic.

8. The susceptor of claim 7 , wherein the refractory ceramic comprises a semiconductor.

9. The susceptor of claim 8 , wherein the semiconductor comprises silicon carbide.

10. The susceptor of claim 6 , wherein at least one of the first surface, the second surface, and the third surface is honed.

11. The susceptor of claim 6 , wherein the first surface, the second surface, and the third surface are all honed.

12. The susceptor of claim 6 , wherein the first surface, the second surface, and the third surface are all unhoned.

13. The susceptor of claim 1 , wherein the first plurality of contact knobs has a first height, the second plurality of contact knobs has a second height, and the third plurality of contact knobs has a third height.

14. The susceptor of claim 13 , wherein the first height, the second height, and the third height are within a 10% tolerance range.

15. The susceptor of claim 13 , wherein the first height is at least 10% greater than at least one of the second height and the third height.

16. The susceptor of claim 13 , wherein the second height is at least 10% greater than at least one of the first height and the third height.

17. The susceptor of claim 13 , wherein the third height is at least 10% greater than at least one of the second height and the first height.

18. The susceptor of claim 1 , wherein the disk body comprises a ceramic coating.

19. The susceptor of claim 1 , further comprising a silicon-containing precoat formed on the first plurality of contact knobs, the second plurality of contact knobs, and the third plurality of contact knobs.

20. 1. An apparatus for treating a substrate, said apparatus comprising: a processing chamber configured to accommodate the substrate; a susceptor configured to support the substrate, the susceptor comprising an annular body extending about an axis of rotation and having a plurality of tang portions extending radially inward toward the axis of rotation; a disk body having an upper surface disposed on a tang portion of the annular body, a first plurality of contact knobs circumferentially distributed about the axis of rotation on a first circumference C1; a second plurality of contact knobs circumferentially distributed about the axis of rotation on a second circumference C2; a third plurality of contact knobs circumferentially distributed about the axis of rotation on a third circumference C3; and a disk body comprising: Equipped with The second circumference (C2) is located radially midway between the first circumference (C1) and the third circumference (C3), limiting contact between a substrate disposed on the disk body and the top surface of the disk body.

21. 1. A method of forming an epitaxial layer, comprising: An apparatus is provided, the apparatus comprising: a processing chamber configured to accommodate a substrate; a susceptor configured to support the substrate, the susceptor comprising an annular body extending about an axis of rotation and having a plurality of tang portions extending radially inward toward the axis of rotation; a disk body having an upper surface disposed on the tang portion of the annular body, the disk body comprising a first plurality of contact knobs distributed circumferentially around the axis of rotation on a first circumference C1, a second plurality of contact knobs distributed circumferentially around the axis of rotation on a second circumference C2, and a third plurality of contact knobs distributed circumferentially around the axis of rotation on a third circumference C3; wherein the second circumference C2 is located radially midway between the first circumference C1 and the third circumference C3, and limits contact between a substrate disposed on the disk body and an upper surface of the disk body; placing the substrate on the susceptor, the substrate comprising a single crystal surface; contacting the substrate with one or more process gases while the substrate is in the processing chamber; forming an epitaxial layer on the single crystal surface of the substrate using the one or more process gases; the substrate is supported and bent by at least one of the first plurality of contact knobs, the second plurality of contact knobs, and the third plurality of contact knobs during at least one of placing the substrate on the susceptor, contacting the substrate with the one or more process gases, and forming the epitaxial layer on the substrate; whereby supporting the substrate on one or more of the first plurality of contact knobs, the second plurality of contact knobs, and the third plurality of contact knobs limits contact between the substrate and the top surface of the disk body.

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