Substrate holding member and ceramic susceptor

Abstract

To provide a technology that suppresses direct impact on a ceramic material constituting a substrate holding member, even when unintended external forces are applied to the substrate holding member due to falling or similar events.SOLUTION: An electrostatic chuck module 100 comprises a tabular ceramic base material 110, a tabular ceramic base 150 bonded to the bottom surface 113 of the ceramic material 110, and a resin protective member 160 bonded to the bottom surface 153 of the ceramic base 150.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a substrate holding member and a ceramic susceptor. [Background technology]

[0002] Patent Document 1 discloses an electrostatic chuck as an example of a substrate holding member having a wafer mounting surface for holding a substrate such as a wafer. The electrostatic chuck described in Patent Document 1 is manufactured by stacking and firing a plurality of green sheets, including a green sheet having holes that form flow paths. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-96336 Summary of the Invention [Problem to be solved by the invention]

[0004] The electrostatic chuck described in Patent Document 1 includes a ceramic dielectric substrate, which is a polycrystalline ceramic sintered body, and an electrode disposed inside the ceramic dielectric substrate. For example, if the electrostatic chuck is accidentally dropped during handling, there is a risk that an impact will be applied directly to the ceramic dielectric substrate.

[0005] The present invention has been made in consideration of the above circumstances, and aims to provide a technology for mitigating the impact on the ceramic material that constitutes a substrate holding member, even when an unintended external force is applied to the substrate holding member due to a drop or the like. [Means for solving the problem]

[0006] According to an aspect of the present invention, there is provided a ceramic substrate having a plate-like shape and a first main surface and a second main surface facing the first main surface in a vertical direction; a plate-shaped ceramic base having a flow path formed therein, the ceramic base having a third main surface joined to the second main surface of the ceramic base, a fourth main surface facing the third main surface in the vertical direction, and a side surface connecting the third main surface and the fourth main surface in the vertical direction; A substrate holding member is provided, characterized by comprising: a protective member that is arranged in close contact with a portion of the side surface or a portion of the fourth main surface of the ceramic base and is formed from resin, metal, or a ceramic different from the ceramic that constitutes the ceramic base. [Effects of the Invention]

[0007] According to the above configuration, a protective member made of resin, metal, or a ceramic different from the ceramic that constitutes the ceramic base is adhered to a part of the side surface or a part of the fourth main surface of the ceramic base, thereby mitigating the impact on the ceramic base even if an unintended external force is applied to the ceramic base due to being dropped, etc. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a perspective view of an electrostatic chuck module 100. [Figure 2] FIG. 2 is a schematic diagram illustrating the electrostatic chuck module 100. As shown in FIG. [Figure 3] FIG. 3 is a schematic explanatory diagram showing the shape of the electrostatic attraction electrode 124. As shown in FIG. [Figure 4] 1(a) to 1(d) are diagrams showing the flow of a method for manufacturing the ceramic base 110. FIG. [Figure 5] 10(a) to 10(d) are diagrams showing the flow of another method for manufacturing the ceramic base 110. FIG. [Figure 6] (a) is an explanatory diagram showing a state in which a groove 131 is formed in one of two sintered bodies 150A, 150B, namely, sintered body 150A, and (b) is an explanatory diagram showing a state in which a groove 131 is formed in both of the two sintered bodies 150A, 150B. [Figure 7]FIG. 7 is a schematic explanatory diagram for explaining a protective member 160 that covers the lower surface 153 and side surfaces 154 of the ceramic base 150. As shown in FIG. [Figure 8] FIG. 8 is a schematic explanatory diagram for explaining the protective member 160 that covers the side surface 154 of the ceramic base 150. As shown in FIG. [Figure 9] FIG. 9 is a schematic explanatory diagram for explaining a protective member 160 that covers a part of the side surface 154 of the ceramic base 150. As shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0009] <Electrostatic chuck module 100> An electrostatic chuck module 100 according to this embodiment will be described with reference to FIGS. 1 and 2. The electrostatic chuck module 100 according to this embodiment is an example of a substrate holding member for attracting and holding a semiconductor wafer such as a silicon wafer (hereinafter simply referred to as a wafer 10). In the following description, an up-down direction 5 is defined based on a state in which the electrostatic chuck module 100 is installed and ready for use (the state shown in FIG. 1). As shown in FIG. 1, the electrostatic chuck module 100 according to this embodiment mainly includes a ceramic substrate 110, an electrostatic attraction electrode 124 (see FIGS. 2 and 3), a ceramic base 150, and a protective member 160.

[0010] The ceramic substrate 110 is a circular, plate-like member with a diameter of 12 inches (approximately 300 mm) and includes two main surfaces (an upper surface 111 and a lower surface 113) facing each other in the vertical direction 5. The upper surface 111 and the lower surface 113 of the ceramic substrate 110 correspond to the first and second main surfaces of the present invention, respectively. A wafer 10 to be held is placed on the upper surface 111 of the ceramic substrate 110. Note that in FIG. 1, the wafer 10 and the ceramic substrate 110 are shown separated from each other for ease of viewing. In this embodiment, the ceramic substrate 110 is formed of a sintered ceramic body. For example, the AlN content can be 90% or more. Note that the ceramic substrate 110 does not necessarily have to be formed of AlN ceramics. For example, the ceramic substrate 110 may be formed of a sintered ceramic body containing Al2O3 (referred to as Al2O3 ceramics).

[0011] Although not shown, the upper surface 111 of the ceramic substrate 110 can be provided with a ring-shaped protrusion arranged on the outer periphery (outer edge) and multiple cylindrical protrusions arranged inside the ring-shaped protrusion.

[0012] A gas flow path (not shown) can be formed inside the ceramic base 110. The gas flow path can be used as a flow path for supplying gas to a space (gap) defined by the upper surface 111 of the ceramic base 110 and the lower surface of the wafer 10. Conversely, gas can be exhausted from the space (gap) defined by the upper surface 111 of the ceramic base 110 and the lower surface of the wafer 10 via the gas flow path. In this case, the pressure difference between the pressure outside the gap and the pressure inside the gap can be adjusted by adjusting the exhaust pressure. This allows the wafer 10 to be adsorbed toward the upper surface of the ceramic base 110.

[0013] 2, an electrostatic attraction electrode 124 is embedded inside the ceramic base 110. The electrostatic attraction electrode 124 can be embedded at a position 0.1 mm to 2.0 mm below the upper surface 111 of the ceramic base 110. In other words, the thickness of the ceramic insulating layer from the upper surface 111 of the ceramic base 110 to the electrostatic attraction electrode 124 can be 0.1 mm or more and 2.0 mm or less.

[0014] 3, the electrostatic attraction electrode 124 has two semicircular electrodes 124a and 124b arranged facing each other with a predetermined distance between them, and has a generally circular shape as a whole. In this embodiment, the outer diameter of the electrostatic attraction electrode 124 is 292 mm. The wafer 10 can be electrostatically attracted by applying a predetermined voltage (e.g., ±500 V) to each of the electrodes 124a and 124b. In this embodiment, the ceramic base 110 and the electrostatic attraction electrode 124 form an electrostatic chuck.

[0015] As shown in FIG. 2 , a ceramic base 150 is bonded to the lower surface 113 of the ceramic substrate 110. The ceramic base 150 has a circular plate shape with the same diameter as the ceramic substrate 110 and includes two main surfaces (an upper surface 151 and a lower surface 153) facing each other in the vertical direction 5. The upper surface 151 and the lower surface 153 of the ceramic base 150 correspond to the third and fourth main surfaces, respectively. In this embodiment, the ceramic base 150 is formed of a sintered ceramic body containing SiC (SiC ceramics). The thermal conductivity of SiC ceramics is 70 W / mk or higher. Because SiC ceramics have high resistance to water, water can be used as a cooling fluid through the flow paths 130 formed therein. Water has a high heat transfer coefficient and is suitable for absorbing large amounts of heat. Note that SiC ceramics may be formed by adding sintering aids such as B4C, C, and YO3 to SiC, which improves sinterability. Furthermore, the ceramic substrate 110 may contain metal borides, metal carbides, metal nitrides, etc. For example, the metal borides may be those of metals in Groups 4 to 6 of the periodic table. This allows the linear thermal expansion coefficient to be adjusted, facilitating bonding to the ceramic substrate 110.

[0016] As shown in FIG. 2 , the protective member 160 is bonded to the underside 153 of the ceramic base 150 in close contact. Close contact means that there are no voids. Even if a bonding layer is present between the ceramic base 150 and the protective member 160, close contact is considered to exist if there are no voids. The protective member 160 is preferably formed of a material with a low Young's modulus, a material that is easily plastically deformed, and a material that has excellent plasma resistance. In this embodiment, the protective member 160 is a resin cover that covers the entire underside 153 of the ceramic base 150. That is, the protective member 160 is a cover member made of resin and has a circular plate shape with the same diameter as the ceramic substrate 110 and the ceramic base 150. The protective member 160 can be formed, for example, using a resin member obtained by processing a plate made of resin such as polyimide or PTFE into a disk shape. In this embodiment, the protective member 160 is 5 mm thick. The thickness of the protective member 160 is preferably 0.5 mm or more.

[0017] Next, a method for manufacturing the electrostatic chuck module 100 will be described. In the following, an example will be described in which the ceramic base 110 is made of AlN ceramics formed from AlN. The AlN ceramics is made of AlN ceramics containing AlN as a main component. Here, AlN ceramics containing AlN as a main component refers to a ceramic sintered body containing 50 wt% or more of AlN. In addition, for the sake of simplicity, it is assumed that only the electrostatic chucking electrode 124 is embedded in the ceramic base 110.

[0018] First, a method for manufacturing the ceramic substrate 110 will be described. As shown in FIG. 4(a), granulated powder P, primarily composed of AlN powder, is placed in a carbon mold with a bed 601 and pre-pressed with a punch 602. The granulated powder P preferably contains 7 wt % or less of a sintering aid (e.g., Y2O3). Next, as shown in FIG. 4(b), an electrode 124 cut to a predetermined shape is placed on the pre-pressed granulated powder P. The electrode 124 is placed parallel to a plane perpendicular to the pressure direction (the bottom surface of the mold with a bed 601). At this time, a W pellet or a Mo pellet may be embedded at the position of the terminal 124T (see FIG. 3) of the electrode 124.

[0019] As shown in FIG. 4(c), granulated powder P is further poured into the bed-type mold 601 so as to cover the electrostatic chucking electrode 124, and then pressed and molded with a punch 602. At this time, the amount of granulated powder P covering the electrostatic chucking electrode 124 can be adjusted so that the electrostatic chucking electrode 124 is embedded at a depth of 0.3 mm or more. Next, as shown in FIG. 4(d), the granulated powder P with the electrostatic chucking electrode 124 embedded therein is fired in a pressed state. The pressure applied during firing is preferably 1 MPa or more. Furthermore, firing is preferably performed at a temperature of 1800°C or more. Note that firing can be performed multiple times. Next, to form the terminal 124T (see FIG. 3), blind holes are drilled down to the electrostatic chucking electrode 124. Note that if a pellet is embedded, blind holes can be drilled down to the pellet. Furthermore, if necessary, through holes can be formed to form gas channels. In this case, a ceramic substrate 110 having a gas channel formed therein can be produced.

[0020] The upper surface 111, lower surface 113, and side surface 114 of the ceramic base 110 thus formed are ground, and further polished as necessary. At this time, the distance in the vertical direction 5 from the upper surface 111 of the ceramic base 110 to the electrostatic attraction electrode 124 can be adjusted. Furthermore, by performing sandblasting on the upper surface 111, it is possible to form a plurality of convex portions and an annular convex portion on the upper surface 111. Note that although sandblasting is a suitable processing method for forming the plurality of convex portions and the annular convex portion, other processing methods can also be used.

[0021] The ceramic substrate 110 can also be manufactured by the following method. If necessary, 7 wt% or less of a sintering aid (YO) is added to the AlN raw material powder. Metal carbides, metal nitrides, or metal borides can also be added to the AlN raw material powder. Next, a binder is added to the AlN raw material powder, and the mixture is mixed in ethanol, dried, and then granulated to produce granulated powder P containing AlN as a component. The granulated powder P is then filled into a rubber mold and isostatically pressed (CIP) using water pressure to produce two plate-shaped CIP compacts 610 (see FIG. 5(a)). For example, CIP molding can be performed at a pressure of 130 MPa. Next, the CIP compacts 610 are degreased to remove the binder (see FIG. 5(b)). Next, as shown in FIG. 5(c), a recess 611 for embedding the electrostatic attraction electrode 124 is formed in one of the degreased CIP compacts 610. The recess 611 may be formed in the CIP compact 610 before degreasing. After the electrostatic chucking electrode 124 is placed in the recess 611 of the CIP compact 610, another CIP compact 610 is stacked on top of it. The thickness of the other CIP compact 610 can be adjusted so that the electrostatic chucking electrode 124 is embedded at a depth of 0.3 mm or more. Next, as shown in FIG. 5(d), the stacked CIP compacts 610 sandwiching the electrostatic chucking electrode 124 are fired in a pressed state to produce a fired compact. The pressure applied during firing is preferably 1 MPa or more. Furthermore, firing is preferably performed at a temperature of 1800°C or higher. Firing can also be performed multiple times. The steps after producing the fired compact are similar to those described above, and therefore will not be described here.

[0022] Next, a description will be given of a method for manufacturing the ceramic base 150. First, in the same manner as in the method for manufacturing the ceramic base 110 described above, granulated powder P containing SiC as a component is prepared.

[0023] Next, as described above, the granulated powder P is filled into a rubber mold and isostatically pressed (CIP) using water pressure to produce two plate-shaped CIP molded bodies, which are then degreased. Furthermore, as described above, the degreased CIP molded bodies are fired at room temperature or hot-press fired. Next, the two fired bodies 150A and 150B (see FIGS. 6(a) and 6(b)) are subjected to external shaping to form grooves 131 that will later become the flow paths 130. For example, as shown in FIG. 6(a), grooves 131 are formed on the top surface of one fired body 150A, and the other fired body 150B is then stacked and joined from above, thereby producing a ceramic base 150 with a flow path 130 formed therein. Alternatively, as shown in FIG. 6(b), grooves 131 can be formed on the upper surface of one sintered body 150A and the lower surface of the other sintered body 150B, and the two sintered bodies 150A and 150B can be stacked and bonded to produce a ceramic base 150 having a channel 130 formed therein. The two sintered bodies 150A and 150B can be bonded by diffusion bonding. The grooves 131 do not necessarily have to be formed in the sintered body. Before firing the CIP molded body, the CIP molded body can be calcined at a temperature lower than the sintering temperature (e.g., a temperature 500°C to 100°C lower than the sintering temperature) to produce a calcined body, and the grooves 131 can be formed in the calcined body. Alternatively, the grooves 131 can be formed in the CIP molded body, and after calcining the CIP molded body with the grooves 131 formed, additional processing can be performed on the calcined body so that the grooves 131 have the desired dimensions.

[0024] The ceramic substrate 110 and the ceramic base 150 thus fabricated can be bonded together using hard brazing, soft brazing, anodic bonding, or the like. Examples of hard brazing materials that can be used include silver brazing (BAg-8, melting point 780°C), aluminum brazing (A4047, eutectic point 577°C), gold brazing (BAu-4, liquidus temperature 950°C), and nickel brazing (BNi-2, liquidus temperature 1000°C). These hard brazing materials may contain active metals such as Ti, Hf, and Zr. Metal foils such as Al foils can also be used as hard brazing materials. When bonding the ceramic substrate 110 and the ceramic base 150 together using hard brazing, it is preferable to set the centerline average roughness (Ra) of the bonding surfaces before bonding to 1.6 μm or less. Examples of soft brazing materials that can be used include In, Sn, Pb, and alloys (solder) of these metals. When the ceramic substrate 110 and the ceramic base 150 are joined by soft soldering, it is preferable that the center line average roughness Ra of the joining surfaces before joining is 1.6 μm or less.

[0025] Next, the protective member 160 made of a resin material is bonded to the lower surface 152 of the ceramic base 150. For example, the protective member 160 and the ceramic base 150 can be bonded together using an adhesive such as silicone resin or epoxy resin.

[0026] <Effects of the embodiment> In the above embodiment, the electrostatic chuck module 100 includes a plate-shaped ceramic substrate 110, a plate-shaped ceramic base 150 joined to the lower surface 113 of the ceramic substrate 110, and a resin protective member 160 joined to the lower surface 153 of the ceramic base 150.

[0027] Because the protective member 160 is bonded to the underside 153 of the ceramic base 150, even if an unintended external force is applied to the ceramic base 150 due to being dropped, the ceramic base 150 is prevented from being directly impacted, and damage to the ceramic base 150 can be prevented. Furthermore, resin has high thermal insulation properties. Therefore, when the protective member 160 is formed from resin as in this embodiment, the amount of heat input to the wafer is prevented from escaping through the protective member 160. This allows almost all of the heat input to the wafer to be absorbed by the refrigerant flowing through the flow path 130 formed inside the ceramic base 150, making thermal management easier.

[0028] The resin protective member 160 can be formed by processing a plate-shaped member made of a resin, such as polyimide or a fluororesin such as PTFE, into a disk shape and bonding it to the lower surface 153 of the ceramic base 150 with an adhesive such as silicone. In this case, the protective member 160 is in close contact with the lower surface 153 of the ceramic base 150 with a bonding layer (adhesive layer) provided between the lower surface 153 of the ceramic base 150 and the protective member 160. As described above, even if a bonding layer is included between the ceramic base 150 and the protective member 160, it can be said that they are in close contact as long as there are no gaps. Bonding using an adhesive can easily bond the protective member 160 and the ceramic base 150 in close contact. Alternatively, the protective member 160 can be formed on the lower surface 153 of the ceramic base 150 by forming a PTFE film or the like on the lower surface 153 of the ceramic base 150. In this case, the lower surface 153 of the ceramic base 150 and the protective member 160 are bonded without a bonding layer provided between them. This increases the bonding strength between the protective member 160 and the ceramic base 150 compared to when the protective member 160 and the lower surface 153 of the ceramic base 150 are bonded via a bonding layer. When the protective member 160 is formed on the lower surface 153 of the ceramic base 150 by film formation, it is preferable that the film thickness of the protective member 160 be 200 μm or more. This makes it possible to efficiently absorb impacts on the ceramic base 150 even when an unintended external force is applied to the ceramic base 150 due to, for example, being dropped.

[0029] <Modification form> The above-described embodiment is merely illustrative and may be modified as appropriate. For example, the protective member 160 does not necessarily have to be made of resin. For example, the protective member 160 can be made of a metal material such as an Al alloy, an Mo-based alloy, or a W-based alloy. When the protective member 160 is made of an Al alloy, the protective member 160 and the ceramic base 150 can be bonded together using an adhesive such as silicone. Alternatively, the protective member 160 and the ceramic base 150 can be bonded together by soft soldering using a soft solder material such as In or hard soldering using a hard solder material such as Al foil. In either case, a bonding layer (a layer of adhesive, a layer of soft solder material, and a layer of hard solder material) is provided between the lower surface 153 of the ceramic base 150 and the protective member 160. In this way, by bonding the protective member 160 and the ceramic base 150 with a bonding layer interposed between them, the protective member 160 and the ceramic base 150 can be easily bonded together.

[0030] Even when the protective member 160 is made of a metal material, the same technical effects as when it is made of a resin material can be achieved. That is, even if an unintended external force is applied to the ceramic base 150 due to a fall or the like, the impact on the ceramic base 150 can be mitigated, and damage to the ceramic base 150 can be suppressed. Furthermore, when the metallic protective member 160 is joined to the ceramic base 150 by hard soldering or soft soldering, compressive stress is applied to the ceramic base 150. This improves resistance to external forces. Furthermore, when the protective member 160 is made of a Mo-based alloy or a W-based alloy, the CTE difference (difference in linear expansion coefficient) between the SiC ceramic ceramic base 150 and the protective member 160 can be reduced. This allows the protective member 160 and the ceramic base 150 to be directly joined. When the protective member 160 and the ceramic base 150 are directly joined, the protective member 160 and the ceramic base 150 can be easily attached to each other. oBy applying pressure to the joining surfaces at a temperature of 0°C or higher to join, the joining strength can be improved compared to joining using an adhesive, hard solder joining, or soft solder joining. Therefore, the strength characteristics (toughness) of the entire ceramic base 150 to which the protective member 160 is joined can be improved. When the protective member 160 is formed from a Mo-based alloy or a W-based alloy, it is preferable that the Mo-based alloy or the W-based alloy contains an additive for adjusting the CTE, such as a metal boride.

[0031] The protective member 160 may be a sprayed layer such as an Al-CS layer (Al cold spray layer) or an ALO layer (alumina spray layer). In this specification, the term "spraying method" includes the cold spray method (low-temperature spraying method), and the term "sprayed layer" includes layers formed by general spraying methods (e.g., atmospheric plasma spraying) and cold spraying methods (e.g., an Al-CS layer). Even when the protective member 160 is a sprayed layer, the same technical effects as when the protective member 160 is made of a resin material can be achieved. That is, even when an unintended external force is applied to the ceramic base 150 due to a fall or the like, the impact on the ceramic base 150 can be absorbed. This prevents damage to the ceramic base 150. To absorb the impact, the thickness of the sprayed film is preferably 200 μm or more, and more preferably 500 μm or more.

[0032] In the above-described embodiment and modified embodiments, the protective member 160 is bonded to the lower surface 153 of the ceramic base 150 so as to cover the entire lower surface 153 of the ceramic base 150. However, the present invention is not limited to such an embodiment. For example, as shown in FIG. 7 , the protective member 160 may be bonded to the ceramic base 150 so as to cover the lower surface 153 and the side surface 154 of the ceramic base 150. In this case, the protective member 160 does not necessarily cover the entire lower surface 153 and the entire side surface 154. For example, the protective member 160 may cover a portion of the lower surface 153 and a portion of the side surface 154. Alternatively, as shown in FIG. 8 , the protective member 160 may not cover the lower surface 153 of the ceramic base 150, but may cover a portion (or all) of the side surface 154 of the ceramic base 150. In particular, it may cover a lower portion of the side surface. In this case, it is also possible to adhere the protective member 160 to the side surface 154 of the ceramic base 150 by so-called shrink fitting, and it is possible to easily join the protective member 160 and the ceramic base 150. In either case, even if an unintended external force is applied to the ceramic base 150 due to being dropped or the like, it is possible to prevent the ceramic base 150 from being directly subjected to an impact.

[0033] As shown in FIG. 9 , a ceramic protective member 160 can be disposed on the outside of the ceramic base 150. The ceramic protective member 160 is formed of a different ceramic material having a firing shrinkage rate greater than that of the ceramic base 150. For example, by reducing the molding pressure during CIP molding compared to that of the ceramic base 150, a different ceramic material having a firing shrinkage rate greater than that of the ceramic base 150 can be produced. Alternatively, the firing shrinkage rate can be adjusted by changing the composition of the granulated powder. By disposing the protective member 160 having a firing shrinkage rate greater than that of the ceramic base 150 on the outside of the ceramic base 150, compressive stress can be applied to the ceramic base 150 during firing. Applying compressive stress to the ceramic base 150 during firing can suppress the effects of impact forces on the internal structure of the ceramic base 150 (e.g., the flow path 130).

[0034] In the above-described embodiment and modified embodiment, the ceramic base 150 and the ceramic substrate 110 are sintered ceramic bodies containing SiC as a component. However, the present invention is not limited to this embodiment, and the ceramic base 150 and the ceramic substrate 110 may be other sintered ceramic bodies.

[0035] Furthermore, the shapes and thicknesses of the ceramic substrate 110 and the ceramic base 150 may be changed as appropriate. Furthermore, the planar shape and / or cross-sectional shape of the flow channel 130 formed inside the ceramic base 150 may be changed as appropriate.

[0036] In the above-described embodiment and modified embodiment, the ceramic base 110, which functions as an electrostatic chuck, is bonded to the upper surface 151 of the ceramic base 150. However, the present invention is not limited to such an embodiment. Of the electrostatic chuck module 100 described above, a combination of the ceramic base 150 and the protective member 160 can be used as a ceramic susceptor for mounting a substrate holding member (electrostatic chuck) used in semiconductor manufacturing.

[0037] Although the present invention has been described above using embodiments and modifications thereof, the technical scope of the present invention is not limited to the scope of the above description. It will be apparent to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the claims that such modifications and improvements can also be included within the technical scope of the present invention.

[0038] The order of execution of each process in the manufacturing method shown in the specification and drawings is not particularly specified, and the processes may be executed in any order unless the output of a previous process is used in a subsequent process. For convenience, even if a description is made using "first," "next," etc., it does not mean that the processes must be executed in this order. [Explanation of symbols]

[0039] 100 Electrostatic Chuck Module 110 Ceramic substrate 124 Electrostatic Adsorption Electrode 130 flow path 150 Ceramic base 160 Protective material

Claims

1. a plate-shaped ceramic substrate having a first main surface and a second main surface facing the first main surface in the up-down direction; a plate-like ceramic base having a flow path formed therein, the plate-like ceramic base having a third main surface joined to the second main surface of the ceramic base, a fourth main surface facing the third main surface in the vertical direction, and a side surface connecting the third main surface and the fourth main surface in the vertical direction; a protective member arranged in close contact with a portion of the side surface or a portion of the fourth main surface of the ceramic base, and formed of resin, metal, or a ceramic different from the ceramic constituting the ceramic base.

2. 2. The substrate holding member according to claim 1, wherein a bonding layer is disposed between the protection member and a part of the side surface or the fourth main surface of the ceramic base.

3. The substrate holding member according to claim 1 , wherein a part of the side surface or a part of the fourth main surface of the ceramic base is directly bonded to the protection member.

4. The substrate holder according to claim 1 , wherein the protective member is a thermally sprayed layer.

5. a plate-like ceramic base having an upper surface on which a substrate holding member for semiconductor manufacturing is placed, a lower surface vertically opposite to the upper surface, and side surfaces vertically connecting the upper surface and the lower surface, and having a flow path formed therein; a protective member that is arranged in close contact with a portion of the side surface or a portion of the bottom surface of the ceramic base and is formed from resin, metal, or a ceramic different from the ceramic that constitutes the ceramic base.

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