High frequency amplifier module

Abstract

To provide a high frequency amplifier module having improved space isolation characteristics in a case without having a wall to suppress propagation of unwanted waves in the case.SOLUTION: A high frequency amplifier module 100 includes: a case 10 including a first input terminal 11, a second input terminal 12, a first output terminal 13, and a second output terminal 14; a first amplifier semiconductor integrated circuit 40 provided on a transmission path of a first channel which connects the first input terminal 11 and the first output terminal 13; a second amplifier semiconductor integrated circuit 50 provided on a transmission path of a second channel which connects the second input terminal 12 and the second output terminal 14; a phase difference applying unit 81 which applies a phase difference of 180 degrees between a high frequency signal that is input from the first input terminal 11 and a high frequency signal that is input from the second input terminal 12; and a phase restoration unit 82 which restores a phase of the high frequency signal changed by the phase difference applying unit 81 to an original phase.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a high frequency amplifier module that amplifies a high frequency signal. [Background technology]

[0002] In a high-frequency amplifier module, the amplifier semiconductor integrated circuit inside the module case is connected to the transmission line board by wires. When transmitting high-frequency signals, radio waves are radiated into space from the wires and couple with other wires, degrading the spatial isolation characteristics inside the case.

[0003] Generally, measures are taken to prevent unwanted waves from propagating through the space inside the case by providing walls at intervals corresponding to the cutoff frequency inside the case.

[0004] Patent Document 1 discloses a semiconductor device in which at least one ground line is inserted between the semiconductor elements to improve isolation between the semiconductor elements. In the semiconductor device disclosed in Patent Document 1, the ground line inserted between the semiconductor elements acts as a wall to suppress the propagation of unwanted waves, improving the spatial isolation characteristics within the module case. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 11-354709 Summary of the Invention [Problem to be solved by the invention]

[0006] However, as the signals to be amplified by high-frequency amplifier modules become increasingly higher in frequency, and as there is a demand for miniaturization and high-density packaging of high-frequency amplifier modules, it is becoming difficult to provide walls inside the case of the high-frequency amplifier module that suppress the propagation of unwanted waves, as in the semiconductor device disclosed in Patent Document 1.

[0007] The present disclosure has been made in consideration of the above, and aims to obtain a high-frequency amplifier module that has improved spatial isolation characteristics within a case without providing a wall within the case that suppresses the propagation of unwanted waves. [Means for solving the problem]

[0008] In order to solve the above-mentioned problems and achieve the object, the present disclosure provides a high-frequency amplifier module comprising: a case having a first input terminal, a second input terminal, a first output terminal, and a second output terminal; a first amplifier semiconductor integrated circuit provided in a transmission path of a first channel connecting the first input terminal and the first output terminal; and a second amplifier semiconductor integrated circuit provided in a transmission path of a second channel connecting the second input terminal and the second output terminal. The high-frequency amplifier module comprises: a phase difference imparting unit that imparts a phase difference of 180 degrees between a high-frequency signal input from the first input terminal and a high-frequency signal input from the second input terminal; and a phase restoration unit that restores the phases changed by the phase difference imparting unit when imparting a phase difference of 180 degrees between the high-frequency signal amplified by the first amplifier semiconductor integrated circuit and the high-frequency signal amplified by the second amplifier semiconductor integrated circuit to their original phases. [Effects of the Invention]

[0009] According to the present disclosure, it is possible to obtain an effect of obtaining a high-frequency amplifier module with improved spatial isolation characteristics within the case without providing a wall for suppressing the propagation of unwanted waves within the case. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a diagram showing a configuration of a high-frequency amplifier module according to a first embodiment; [Figure 2] FIG. 10 is a diagram showing the configuration of a high-frequency amplifier module according to a second embodiment; DETAILED DESCRIPTION OF THE INVENTION

[0011] High-frequency amplifier modules according to embodiments will be described in detail below with reference to the drawings.

[0012] Embodiment 1 1 is a diagram showing the configuration of a high-frequency amplifier module according to embodiment 1. The high-frequency amplifier module 100 includes a case 10 in which a first input terminal 11, a second input terminal 12, a first output terminal 13, and a second output terminal 14 are provided. The high-frequency amplifier module 100 includes a first transmission line substrate 20, a second transmission line substrate 30, a first amplifier semiconductor integrated circuit 40, and a second amplifier semiconductor integrated circuit 50 inside the case 10.

[0013] Here, the transmission path from the first input terminal 11 to the first output terminal 13 is the transmission path of the first channel, and the transmission path from the second input terminal 12 to the second output terminal 14 is the transmission path of the second channel. In this way, the high-frequency amplifier module 100 is a two-channel high-frequency amplifier module having transmission paths for two channels.

[0014] The first transmission line substrate 20 includes a first transmission line 21 and a second transmission line 22. The length of the first transmission line 21 is adjusted so that the phase of the first transmission line 21 leads that of the second transmission line 22 by 180 degrees in a frequency band including a predetermined frequency to be amplified.

[0015] The first transmission line 21, which is a part of the transmission path of the first channel, and the second transmission line 22, which is a part of the transmission path of the second channel, form a phase difference imparting section 81 that imparts a phase difference of 180 degrees between the high-frequency signal input from the first input terminal 11 and the high-frequency signal input from the second input terminal 12.

[0016] The second transmission line substrate 30 includes a third transmission line 31 and a fourth transmission line 32. The length of the fourth transmission line 32 is adjusted so that the phase of the fourth transmission line 32 is 180 degrees ahead of that of the third transmission line 31 in a frequency band including a preset frequency to be amplified.

[0017] The third transmission line 31, which is a part of the transmission path of the first channel, and the fourth transmission line 32, which is a part of the transmission path of the second channel, form a phase restoration unit 82 that restores the phase, which is changed by the phase difference imparting unit 81 when imparting a 180-degree phase difference to the high-frequency signal amplified by the first amplifier semiconductor integrated circuit 40 and the high-frequency signal amplified by the second amplifier semiconductor integrated circuit 50, to the original phase.

[0018] The first input terminal 11 and the first transmission line 21 are connected by a first wire 61. The first transmission line 21 and the first amplifier semiconductor integrated circuit 40 are connected by a second wire 62. The first amplifier semiconductor integrated circuit 40 and the third transmission line 31 are connected by a third wire 63. The third transmission line 31 and the first output terminal 13 are connected by a fourth wire 64.

[0019] The second input terminal 12 and the second transmission line 22 are connected by a fifth wire 65. The second transmission line 22 and the second amplifier semiconductor integrated circuit 50 are connected by a sixth wire 66. The second amplifier semiconductor integrated circuit 50 and the fourth transmission line 32 are connected by a seventh wire 67. The fourth transmission line 32 and the second output terminal 14 are connected by an eighth wire 68.

[0020] The width of the case 10 in the direction connecting the first input terminal 11 and the first output terminal 13 is longer than half the wavelength of the preset frequency to be amplified, and the cutoff frequency is lower than the preset frequency to be amplified.

[0021] A high-frequency signal is input to each of the first input terminal 11 and the second input terminal 12. Here, it is assumed that the high-frequency signal input to the first input terminal 11 and the high-frequency signal input to the second input terminal 12 are in phase. The high-frequency signal input from the first input terminal 11 propagates through the first wire 61, the first transmission line 21, the second wire 62, the first amplifier semiconductor integrated circuit 40, the third wire 63, the third transmission line 31, and the fourth wire 64 inside the high-frequency amplifier module 100. The high-frequency signal input from the second input terminal 12 propagates through the fifth wire 65, the second transmission line 22, the sixth wire 66, the second amplifier semiconductor integrated circuit 50, the seventh wire 67, the fourth transmission line 32, and the eighth wire 68 inside the high-frequency amplifier module 100.

[0022] Because there is a 180-degree phase difference between the first transmission line 21 and the second transmission line 22 in the first transmission line substrate 20 in the frequency band to be amplified, the high-frequency signal input from the first input terminal 11 and the high-frequency signal input from the second input terminal 12 have a 180-degree phase difference and are out of phase with each other after passing through the first transmission line substrate 20. Therefore, the spurious wave radiated from the second wire 62 connecting the first transmission line 21 and the first amplifier semiconductor integrated circuit 40 is radiated in an out-of-phase with the spurious wave radiated from the sixth wire 66 connecting the second transmission line 22 and the second amplifier semiconductor integrated circuit 50. Furthermore, the spurious wave radiated from the third wire 63 connecting the first amplifier semiconductor integrated circuit 40 and the third transmission line 31 is radiated in an out-of-phase with the spurious wave radiated from the seventh wire 67 connecting the second amplifier semiconductor integrated circuit 50 and the fourth transmission line 32. As a result, unwanted waves weaken each other and are attenuated in the space within the case 10. Therefore, the high-frequency amplifier module 100 according to the first embodiment can reduce the insulation distance required to electrically separate the transmission path of the first channel from the transmission path of the second channel.

[0023] The signal that passes through the first amplifier semiconductor integrated circuit 40 and the second amplifier semiconductor integrated circuit 50 and is input to the second transmission line substrate 30 has a phase difference of 180 degrees between the third transmission line 31 and the fourth transmission line 32 within the substrate, so that the respective high-frequency signals are in phase, and in-phase high-frequency signals are output from the first output terminal 13 and the second output terminal 14.

[0024] In the high-frequency amplifier module 100 according to the first embodiment, the insulation distance required to electrically separate the transmission path of the first channel from the transmission path of the second channel is small, so there is no need to provide a wall for improving spatial isolation characteristics inside the case 10. This makes it possible to reduce the size of the high-frequency amplifier module 100 according to the first embodiment.

[0025] Embodiment 2 2 is a diagram showing the configuration of a high-frequency amplifier module according to embodiment 2. The high-frequency amplifier module 100 includes a case 10 provided with a first input terminal 11, a second input terminal 12, a first output terminal 13, and a second output terminal 14. The high-frequency amplifier module 100 includes a first phase shifter semiconductor integrated circuit 71, a second phase shifter semiconductor integrated circuit 72, a third phase shifter semiconductor integrated circuit 73, a fourth phase shifter semiconductor integrated circuit 74, a first amplifier semiconductor integrated circuit 40, and a second amplifier semiconductor integrated circuit 50 inside the case 10.

[0026] Here, the transmission path from the first input terminal 11 to the first output terminal 13 is defined as a first channel, and the transmission path from the second input terminal 12 to the second output terminal 14 is defined as a second channel. In this way, the high-frequency amplifier module 100 is a two-channel high-frequency amplifier module having transmission paths for two channels.

[0027] The first input terminal 11 and the first phase shifter semiconductor integrated circuit 71 are connected by a first wire 61. The first phase shifter semiconductor integrated circuit 71 and the first amplifier semiconductor integrated circuit 40 are connected by a second wire 62. The first amplifier semiconductor integrated circuit 40 and the third phase shifter semiconductor integrated circuit 73 are connected by a third wire 63. The third phase shifter semiconductor integrated circuit 73 and the first output terminal 13 are connected by a fourth wire 64.

[0028] The second input terminal 12 and the second phase shifter semiconductor integrated circuit 72 are connected by a fifth wire 65. The second phase shifter semiconductor integrated circuit 72 and the second amplifier semiconductor integrated circuit 50 are connected by a sixth wire 66. The second amplifier semiconductor integrated circuit 50 and the fourth phase shifter semiconductor integrated circuit 74 are connected by a seventh wire 67. The fourth phase shifter semiconductor integrated circuit 74 and the second output terminal 14 are connected by an eighth wire 68.

[0029] A high-frequency signal is input to each of the first input terminal 11 and the second input terminal 12. The high-frequency signal input to the first input terminal 11 is transmitted through the first wire 61, the first phase shifter semiconductor integrated circuit 71, the second wire 62, the first amplifier semiconductor integrated circuit 40, the third wire 63, the third phase shifter semiconductor integrated circuit 73, and the fourth wire 64 inside the high-frequency amplifier module 100.

[0030] The high-frequency signal input to the second input terminal 12 is transmitted through the fifth wire 65, the second phase shifter semiconductor integrated circuit 72, the sixth wire 66, the second amplifier semiconductor integrated circuit 50, the seventh wire 67, the fourth phase shifter semiconductor integrated circuit 74 and the eighth wire 68 inside the high-frequency amplifier module 100.

[0031] The first phase shifter semiconductor integrated circuit 71, which is part of the transmission path of the first channel, and the second phase shifter semiconductor integrated circuit 72, which is part of the transmission path of the second channel, form a phase difference imparting section 81 that imparts a phase difference of 180 degrees to the high-frequency signal input from the first input terminal 11 and the high-frequency signal input from the second input terminal 12.

[0032] The third phase shifter semiconductor integrated circuit 73, which is part of the transmission path of the first channel, and the fourth phase shifter semiconductor integrated circuit 74, which is part of the transmission path of the second channel, form a phase restoration unit 82 that restores the phase, which was changed by the phase difference imparting unit 81 when imparting a 180-degree phase difference to the high-frequency signal amplified by the first amplifier semiconductor integrated circuit 40 and the high-frequency signal amplified by the second amplifier semiconductor integrated circuit 50, to the original phase.

[0033] In the high-frequency amplifier module 100, the first phase shifter semiconductor integrated circuit 71 and the second phase shifter semiconductor integrated circuit 72 impart a phase difference of 180 degrees between the high-frequency signal input from the first input terminal 11 and the high-frequency signal input from the second input terminal 12. As a result, the unwanted waves radiated from the second wire 62 connecting the first phase shifter semiconductor integrated circuit 71 and the first amplifier semiconductor integrated circuit 40 and the unwanted waves radiated from the sixth wire 66 connecting the second phase shifter semiconductor integrated circuit 72 and the second amplifier semiconductor integrated circuit 50 are radiated in opposite phases. As a result, the unwanted waves weaken each other and are attenuated in the space within the case 10. This makes it possible to reduce the insulation distance required to electrically separate the transmission path of the first channel from the transmission path of the second channel.

[0034] The signals that pass through the first amplifier semiconductor integrated circuit 40 and the second amplifier semiconductor integrated circuit 50 and are input to the third phase shifter semiconductor integrated circuit 73 and the fourth phase shifter semiconductor integrated circuit 74 have their phases returned to their original phases by the first phase shifter semiconductor integrated circuit 71 and the second phase shifter semiconductor integrated circuit 72. As a result, high-frequency signals that are in phase with the high-frequency signals input to the first input terminal 11 and the second input terminal 12 are output from the first output terminal 13 and the second output terminal 14, respectively.

[0035] The high-frequency amplifier module 100 according to the second embodiment can change the frequency band to be attenuated because the phase can be adjusted arbitrarily using the first phase shifter semiconductor integrated circuit 71 and the second phase shifter semiconductor integrated circuit 72. This makes it possible for the high-frequency amplifier module 100 according to the second embodiment to have a wider bandwidth or to be able to handle multiple frequency bands.

[0036] The configurations shown in the above embodiments are merely examples of the content, and may be combined with other known technologies, or parts of the configurations may be omitted or modified without departing from the spirit of the invention. [Explanation of symbols]

[0037] 10 case, 11 first input terminal, 12 second input terminal, 13 first output terminal, 14 second output terminal, 20 first transmission line substrate, 21 first transmission line, 22 second transmission line, 30 second transmission line substrate, 31 third transmission line, 32 fourth transmission line, 40 first amplifier semiconductor integrated circuit, 50 second amplifier semiconductor integrated circuit, 61 first wire, 62 second wire, 63 third wire, 64 fourth wire, 65 fifth wire, 66 sixth wire, 67 seventh wire, 68 eighth wire, 71 first phase shifter semiconductor integrated circuit, 72 second phase shifter semiconductor integrated circuit, 73 third phase shifter semiconductor integrated circuit, 74 fourth phase shifter semiconductor integrated circuit, 81 phase difference imparting section, 82 phase restoration section, 100 high-frequency amplifier module.

Claims

1. a case having a first input terminal, a second input terminal, a first output terminal, and a second output terminal; a first amplifier semiconductor integrated circuit provided on a transmission path of a first channel connecting the first input terminal and the first output terminal; a second amplifier semiconductor integrated circuit provided on a transmission path of a second channel connecting the second input terminal and the second output terminal; a phase difference imparting unit that imparts a phase difference of 180 degrees between a high frequency signal input from the first input terminal and a high frequency signal input from the second input terminal; a phase restoration unit that restores the phase changed by the phase difference imparting unit when imparting a 180-degree phase difference between the high-frequency signal amplified by the first amplifier semiconductor integrated circuit and the high-frequency signal amplified by the second amplifier semiconductor integrated circuit to the original phase.

2. 2. The high-frequency amplifier module according to claim 1, wherein the phase difference imparting section and the phase restoration section are transmission lines having different line lengths for the transmission path of the first channel and the transmission path of the second channel.

3. 2. The high-frequency amplifier module according to claim 1, wherein the phase difference imparting unit and the phase restoration unit are phase shifter semiconductor integrated circuits installed in the transmission path of the first channel and the transmission path of the second channel, respectively.

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