Base including sticker
By employing surface-to-surface sealing technology and O-ring-assisted sealing in the substrate processing system, the sealing problem of gas channels under high-temperature conditions was solved, thereby improving the gas sealing performance and processing efficiency of the system.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-12-17
- Publication Date
- 2026-03-17
AI Technical Summary
Under high-temperature conditions, existing substrate processing systems struggle to effectively seal gas channels to maintain vacuum and gas purity, leading to gas leakage and reduced processing efficiency.
Employing a surface-to-surface sealing technology that requires no welding or O-ring, a high-precision planar seal is formed through planar contact between the substrate and the sealing ring. Combined with the additional elastic force provided by the O-ring, the gas passage is ensured to be airtight.
This technology effectively seals the gas channels of the substrate processing system under high-temperature conditions, reducing gas leakage and improving processing efficiency and purity.
Smart Images
Figure 2026048855000001_ABST
Abstract
Description
Technical Field
[0001] Cross - Reference to Related Applications This application claims the benefit of U.S. Provisional Application No. 63 / 115,419, filed on November 18, 2020. The entire disclosure of the application referenced above is incorporated herein by reference.
[0002] The present disclosure relates to a substrate processing system, and more particularly, to a pedestal including a seal.
Background Art
[0003] The background description provided here is for the purpose of generally presenting the content of the present disclosure. Within the scope described in this background art section, the research by the inventors named at the present time, as well as aspects of the description that cannot be separately regarded as prior art at the time of filing, are not recognized as prior art against the present disclosure, whether explicitly or implicitly. <关于原子层沉积(ALD),有几种类型可用于在基板上沉积薄膜。ALD的示例包括等离子体增强ALD(PEALD)和热ALD(T - ALD)。用于实施T - ALD的基板处理系统通常包括在处理过程中放置基板的加热台座。
[0004] There are several types of atomic layer deposition (ALD) that can be used to deposit a thin film on a substrate. Examples of ALD include plasma - enhanced ALD (PEALD) and thermal ALD (T - ALD). A substrate processing system for performing T - ALD typically includes a heated pedestal on which a substrate is placed during processing.
Summary of the Invention
[0005] A pedestal assembly for a substrate processing system includes a pedestal that includes a pedestal plate having a plurality of gas through - holes and a stem extending from the pedestal plate. The plurality of gas through - holes extend from a first surface of the pedestal plate to a second surface of the pedestal plate at a location radially outside of the stem. A collar is disposed around openings of the plurality of gas through - holes located on the stem of the pedestal and on the second surface of the pedestal. The collar defines an annular volume between the collar and the stem of the pedestal. An upper opposing surface of the collar forms a surface - to - surface seal with the second surface of the pedestal.
[0006] In other features, the base support structure is attached to the distal end of the stem. An O-ring is located between the distal end of the stem and the base support structure. The stem of the base includes a flange extending radially outward at its bottom edge and a base support structure attached to the flange of the stem. A collar is attached to the base support structure. An O-ring is located between the distal end of the collar and the base support structure.
[0007] In other features, surface-to-surface seals include flat-to-flat seals.
[0008] In other features, the pedestal support structure includes a cylindrical body with side walls. Vertical bores in the side walls define gas channels. The gas channels are in fluid communication with an annular volume and a plurality of gas through-holes. The pedestal support structure includes a cylindrical body defining an internal cavity and a flange extending radially outward from the top surface of the cylindrical body. One or more clamps connect the flange located at the distal end of the stem to the flange extending radially outward from the cylindrical body of the pedestal support structure.
[0009] In other features, the collar includes first and second flanges located on its upper and lower surfaces, respectively. A clamp is positioned around the flange of the base support structure and the second flange of the collar. An O-ring is positioned between the second surface of the second flange and the upper surface of the clamp.
[0010] In other features, the first valve is configured to selectively connect the gas channel, annular volume, and gas through-hole to a vacuum source. The controller is configured to selectively control the first valve to supply vacuum to the gas channel, annular volume, and gas through-hole during substrate processing.
[0011] In other features, the second valve is configured to selectively connect the gas channel, annular volume, and gas through-hole to a purge gas source. The controller is further configured to selectively control the second valve to purge the gas channel, annular volume, and gas through-hole.
[0012] In other features, the valve is configured to selectively connect the gas channel, annular volume, and gas through-hole to a purge gas source. The controller is configured to selectively control the valve to purge the gas channel, annular volume, and gas through-hole. The base is made of ceramic. The base is made of aluminum nitride. The collar is made of ceramic. The collar is made of alumina.
[0013] In other features, the second surface of the base plate and the top surface of the stem are polished to a surface roughness (Ra) of 20 microinches or less. The second surface of the base plate and the top surface of the stem are polished to a surface roughness (Ra) of 16 microinches or less. The second surface of the base plate and the top surface of the stem are polished to a surface roughness (Ra) in the range of 3 to 8 microinches.
[0014] The base assembly includes a base plate containing a plurality of gas through-holes, and a base having a stem extending from the base plate. The plurality of gas through-holes extend from a first surface of the base plate to a second surface of the base plate. A collar is positioned around the stem of the base. The base plate has a first diameter, the stem has a second diameter smaller than the first diameter, and the collar has a third diameter smaller than the first diameter and larger than the second diameter. The plurality of gas through-holes are located in a first region of the base plate defined between the second and third diameters. The gas through-holes are not located in a second region outside the first region, nor in a third region located inside the first region. The collar defines an annular volume between the collar and the stem of the base.
[0015] In other features, the first surface of the collar forms an inter-surface seal with the second surface of the base. The base support structure is attached to the distal end of the stem. An O-ring is located between the distal end of the stem and the base support structure. The second surface of the base plate and the top surface of the stem are polished to a surface roughness (Ra) of 20 microinches or less. The second surface of the base plate and the top surface of the stem are polished to a surface roughness (Ra) of 16 microinches or less. The second surface of the base plate and the top surface of the stem are polished to a surface roughness (Ra) in the range of 3 to 8 microinches.
[0016] In other features, the inter-surface seal includes an inter-plane seal. Multiple gas penetration holes are arranged in a circular pattern in the first region.
[0017] Other areas to which this disclosure may apply will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of this disclosure. [Brief explanation of the drawing]
[0018] This disclosure will be better understood from the detailed description and accompanying drawings.
[0019] [Figure 1] Figure 1 is a functional block diagram of an example of a substrate processing system including a base having a seal according to the present disclosure.
[0020] [Figure 2] Figure 2 is a plan view of the first surface of an example of a base according to the present invention.
[0021] [Figure 3] Figure 3 is a cross-sectional side view of an example of a base including a gas distribution device and seal according to this disclosure.
[0022] [Figure 4] Figure 4 is a cross-sectional side view of an example of a pedestal support structure including a side wall with a gas channel.
[0023] [Figure 5] FIG. 5 is a side cross-sectional view of an example of a pedestal including a seal according to the present disclosure.
[0024] In these drawings, reference numbers may be reused to refer to similar and / or identical elements.
Mode for Carrying Out the Invention
[0025] There are several types of atomic layer deposition (ALD) that can be used to deposit thin films. Examples of ALD include plasma-enhanced ALD (PEALD) and thermal ALD (T-ALD). Each PEALD cycle includes a dosing step in which the substrate is exposed to a precursor, a purge step, an RF plasma step, and a purge step. In T-ALD, the substrate is placed on a pedestal heated during processing and no plasma is used. Each T-ALD cycle typically involves a first dosing step in which the substrate is exposed to a first precursor, a purge step, a second dosing step in which the substrate is exposed to a second precursor, and a purge step. A single layer is typically deposited during each ALD cycle. By performing a plurality of ALD cycles, a layer having a desired thickness is deposited.
[0026] The foregoing description has been directed to a seal system for a pedestal assembly for T-ALD processing, but the seal system and pedestal assembly can also be used for other substrate processing applications. Feeding gas to a high-temperature pedestal used in T-ALD is difficult. In some examples, the temperature of the pedestal and substrate can range from 200°C to 1000°C, although other process temperatures may be used.
[0027] A base assembly includes a base having a base plate and a stem. In some examples, the stem includes a hollow cylindrical portion extending from the base plate. The base plate includes a gas through-hole extending through the base plate and in fluid communication with an annular body or annular volume surrounding the stem. As used herein, fluid communication refers to the flow of gas from one volume to another through a gas channel. A sealing system includes a collar that abuts a second surface of the base plate and surrounds the stem, forming an annular volume.
[0028] The collar provides a surface-to-surface seal on the second surface of the base plate. In other words, one surface of the collar is pressed against the other surface of the base to form a seal without welding or joining the two surfaces, or without using an O-ring in the contact between the surfaces. In some examples, the surface-to-surface seal is located in a single plane and is a planar seal. To maintain a sufficient seal, the second surface of the base and the first surface of the collar are polished to a surface roughness sufficient to maintain the desired amount of sealing. In some examples, the planar seal includes a ceramic seal between the collar and the second surface of the base plate. A planar seal does not provide a suitable leakage rate to the atmosphere. However, the seal provides a suitable isolation of gas species and pressure difference for supplying purge gas or vacuum into the processing chamber, as will be further discussed below.
[0029] The collar forms a sealed annular volume around the base stem. In some examples, an O-ring located at the distal end of the collar provides spring force. In other words, the collar is biased against a second surface of the base plate, forming a seal that isolates the vacuum clamp from chamber pressure.
[0030] Referring here to Figure 1, an example of the substrate processing system 100 includes a processing chamber 102 configured for processing a substrate. In some examples, the process includes thermal atomic layer deposition (T-ALD). The processing chamber 102 includes side walls, a first surface, and a second surface. The processing chamber 102 surrounds the other components of the substrate processing system 100. During processing, the substrate 106 is placed on a base 104. One or more heaters 108 (e.g., a heater array) are placed on the base 104 to heat the base 104 and the substrate 106 during processing. In some examples, the base 104 is made of ceramic such as aluminum nitride (AlN), alumina, or another suitable oxide or non-oxide ceramic material. In other examples, a metallic material such as aluminum may be used.
[0031] The processing chamber 102 includes a gas distribution device 110, such as a showerhead, for introducing and distributing process gases into the processing chamber 102. The gas distribution device (hereinafter referred to as the showerhead) 110 may include a stem portion 112, one end of which is connected to a first surface of the processing chamber 102. The base portion 113 of the showerhead 110 is generally cylindrical and extends radially outward from the opposite end of the stem portion 112 at a location spaced apart from the first surface of the processing chamber 102. The substrate-facing surface of the base portion 113 of the showerhead 110 includes a faceplate 114. Gases such as carrier gases, inert gases, and precursors flow through the stem portion 112 onto the dispersion plate 116 and into the plenum 117. The gases then flow into the processing chamber 102 through a number of gas through-holes (identified as 115 in Figure 3) in the faceplate 114.
[0032] The gas supply system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively referred to as gas source 132), where N is an integer greater than zero. The gas sources 132 are connected to a manifold 139 by valves 134-1, 134-2, ..., and 134-N (collectively referred to as valve 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively referred to as mass flow controller 136). The output of the manifold 139 is supplied to the processing chamber 102. The gas sources 132 can supply process gas, cleaning gas, purge gas, inert gas, precursor, etc., to the processing chamber 102.
[0033] The controller 160 controls the components of the substrate processing system 100. The controller 160 may be connected to the heater 108 and one or more temperature sensors 150 on the base 104. The controller 160 can control the temperature of the base 104 and the substrate 106 by controlling the power supplied to the heater 108 based on the sensed temperature. The heater 108 may be located in one or more zones.
[0034] A vacuum pump 158 maintains a pressure below atmospheric pressure inside the processing chamber 102 during substrate processing. In some examples, the pressure inside the processing chamber is maintained in the range of 10 mTorr to 100 Torr. In some examples, the pressure inside the processing chamber is maintained in the range of 20 Torr to 40 Torr (e.g., 30 Torr).
[0035] Valve 156 is connected to the exhaust port of the processing chamber 102. Valve 156 and vacuum pump 158 are used to control the pressure inside the processing chamber 102 and to exhaust the reactant from the processing chamber 102 through valve 156.
[0036] During processing, the substrate 106 is supported on the first surface of the base 104 by vacuum. The base 104 includes a number of gas through-holes (identified as 224 in Figure 2) that allow gas to pass from the first surface to the second surface of the base 104.
[0037] The sealing system 162 maintains sufficient airtightness around the openings of the multiple holes 224 located on the second surface of the base 104. The sealing system 162 allows for maintaining a vacuum to hold the substrate against the base 104 during processing and for supplying gas through the multiple holes 224 during purging. The sealing system 162 includes a collar 164 positioned around the base stem 165. In some examples, the collar 164 is made of a material having a similar coefficient of thermal expansion (CTE) to the base 104. In some examples, the collar 164 is made of a ceramic such as alumina.
[0038] The volume between the collar 164 and the base stem 165 is selectively connected by a valve 170 to a vacuum pump 158 or another vacuum source. In some examples, the volume between the collar 164 and the base stem 165 may be selectively connected by a valve 174 to a purge gas source 178. A first cylinder 166 surrounds the collar 164, radially spaced away from it, and extends from a second surface of the processing chamber. A second cylinder 168 surrounds the first cylinder 166, radially spaced away from it, and extends from a second surface of the base 104. The first cylinder 166 and the second cylinder 168 are configured to allow relative axial movement between them and to restrict gas flow between them, thereby directing gas exiting the second cylinder 168 downwards.
[0039] During operation, the substrate 106 is placed on the base 104 and valve 170 is opened to the vacuum pump 158. The vacuum holds the substrate 106 against the base 104. As the process is carried out on the substrate 106, valve 170 is closed, the vacuum is turned off, and the substrate 106 is removed. A purging step may be carried out between several substrate processing cycles and / or during maintenance by opening valve 174 (valve 170 remains closed) and allowing purge gas to flow through the volume between the collar 164 and the base stem 165 and through a plurality of gas through-holes 224 in the base 104. The plurality of gas through-holes 224 extend from a first surface of the base 104 to a second surface of the base 104.
[0040] Referring next to Figure 2, a base 200 is shown including a first surface 204 having an outer sealing band 208, lift pin holes 210, a plurality of protrusions or mesa 220, and a plurality of gas through-holes 224. The plurality of protrusions or mesa 220 are distributed across the entire first surface 204 at spaced intervals and can support the substrate in a flat, convex, inclined (from one radial edge to the opposite radial edge), or concave position. In some examples, the outer sealing band 208 and the plurality of protrusions or mesa 220 extend upward to a predetermined height above the first surface 204. In some examples, the predetermined height of the protrusions or mesa 220 may vary. In some examples, the substrate is held flat during processing, and the height of the protrusions may be the same or vary in various patterns to provide a desired cooling pattern.
[0041] Referring next to Figure 3, a base 310 including a sealing system 162 is shown. The base 310 includes a base plate 320 on which the substrate is supported during processing, and a stem portion 322 extending downward from the base plate 320. In some examples, the base 310 is made of ceramic. In some examples, the base plate 320 has a flat cylindrical shape. In some examples, the base plate 320 has a first diameter (d1). In some examples, the stem portion 322 includes a side wall 323 having a second diameter (d2). In some examples, the side wall 323 extends for a predetermined distance. In some examples, the second diameter is smaller than the first diameter. In some examples, the second diameter is 60%, 50%, 40%, or 30% or less of the first diameter. A flange 326 is located at the lower end of the side wall 323. In some examples, the flange 326 extends radially outward from the side wall 323. The side wall 323 defines the internal cavity 324.
[0042] The collar 330 surrounds the side wall 323 of the stem portion 322 of the base 310, spaced apart from it. The collar 330 has a third diameter (d3) and defines an annular volume between the inner surface 332 of the collar 330 and the outer surface of the side wall 323 of the stem portion 322 of the base 310. The collar 330 includes flanges 334 and 336 extending radially outward from its lower and upper ends, respectively. The lower radial inner surface of the collar 330 abuts against the upper radial outer surface of the base support structure 350.
[0043] In some examples, the gas through-hole 224 is located in a region of the base plate 320 situated between the side wall 323 of the stem portion 322 and the inner surface 332 of the collar 330. In some examples, the gas through-hole 224 is not located in a first region of the base plate 320 inside the side wall 323 of the stem portion or outside the inner surface 332 of the collar 330.
[0044] The base support structure 350 is mounted below the flange 326 of the base 310 and has a cylindrical body defining an internal cavity 352. The side wall 354 of the base support structure 350 includes a bore 355 defining a gas channel 356. The gas channel 356 is connected to a vacuum source to hold the substrate against the base 310, or to a purge gas source to purge the base 310 when the substrate is removed as described above. A bellows seal 359 provides a flexible seal around the base support structure 350 on the lower support 364.
[0045] The bottom of the stem portion 322 of the base 310 is connected to the base support structure 350 using one or more clamps. In some examples, one or more clamps include clamp rings having an annular or segmented annular shape. The first clamp 340 is connected to the first surface of the base support structure 350 through a second clamp 344 by one or more fasteners 342. As used herein, the term clamp refers to an annular or arcuate portion fastened to another component to hold one or more components together. In some examples, the second clamp 344 has a "C" shaped cross section (rotated 90 degrees clockwise).
[0046] A third clamp 370 is attached to the bottom opposing surface of the flange (410 in Figure 4) of the base support structure 350. In some examples, the third clamp 370 has an "L" shaped cross-section and includes an upward projecting portion 376 and a radially inward projecting portion 375. An O-ring 378 provides a seal between the second surface of the flange 334 and the upper opposing surface of the radially inward projecting portion 375. Similarly, an O-ring 390 is located between the second surface of the flange 326 and the upper opposing surface of the base support structure 350. An annular heat shield 380 is positioned at a predetermined distance below the base 310 and includes a central opening wide enough to receive the collar 330 and the stem portion 322 of the base 310.
[0047] Referring next to Figure 4, the pedestal support structure 350 includes a body 404 and a flange 410 extending radially outward from the top of the body 404. The side wall 354 of the pedestal support structure 350 includes a bore 355 that defines the vertical portion of a gas channel 356 through which purge gas flows or vacuum is supplied. An annular opening 428 formed on the first surface of the flange 410 defines a vertical plane 432 and a horizontal plane 430 extending radially inward from the vertical plane 432. A groove 434 is formed on the horizontal plane 430. An O-ring seal 390 may be placed within the groove 434. A radial bore 440 passes through the flange portion (or another portion of the pedestal support structure 350) and is in fluid communication with the gas channel 356. An annular projection 461 extends upward from the radially outer upper surface of the flange 410.
[0048] Next, referring to Figure 5, the third clamp 370 is fastened to the lower opposing surface 512 of the flange 410 of the base support structure 350 by one or more fasteners 520. Fastener 342 fastens the first clamp 340 to the upper surface 524 of the flange 410 through the second clamp 344.
[0049] As can be understood, the inter-surface seal is formed at the interface between the upper surface of the flange 336 of the collar 330 and the second surface of the base 310. In some examples, the inter-surface seal includes a planar seal formed when two flat surfaces are in direct contact without joining the two materials using welding or using separate seals such as O-rings. In other examples, the inter-surface seal includes complementary non-planar surfaces. In other words, the contact of two surfaces forms a seal. In some examples, the upper surface of the flange 336 of the collar 330 and the second surface of the base 310 have a surface roughness (R) in the range of 3 to 20 microinches. a ) is polished to ). In other examples, the surface roughness is in the range of 3 to 16 microinches. In other examples, the surface roughness is in the range of 3 to 8 microinches.
[0050] The collar 330 contacts the O-ring 378, thereby biasing the upper surface of the flange 336 of the collar 330 against the second surface of the base 310. Similarly, the O-ring seal 390 provides a seal between the second surface of the flange 326 and the upper surface of the base support structure 350.
[0051] The foregoing description is purely illustrative and is not intended to limit the Disclosure, its application, or its use in any way. The broad teachings of this Disclosure can be implemented in various forms. Thus, while this Disclosure includes specific examples, the true scope of this Disclosure should not be limited to such examples, as other modifications will become apparent when considering the drawings, specification, and the claims below. It should be understood that one or more steps in a method may be performed in a different order (or simultaneously) without altering the principles of this Disclosure. Furthermore, while each embodiment is described above as having specific features, it is possible to implement one or more of these features described in relation to any embodiment of this Disclosure in other embodiments and / or combine them with any feature of any other embodiment (even if such combinations are not explicitly described). In other words, the described embodiments are not mutually exclusive, and substituting one or more embodiments with one or more is within the scope of this Disclosure.
[0052] The spatial and functional relationships between elements (e.g., modules, circuit elements, semiconductor layers, etc.) are described using a variety of terms, such as “connected,” “engaged,” “joined,” “adjacent,” “next to,” “above,” “upwards,” “below,” and “positioned.” Furthermore, when a relationship between a first element and a second element is described in the above disclosure, unless it is explicitly described as “direct,” the relationship may be a direct relationship in which no other intervening elements exist between the first and second elements, or it may be an indirect relationship in which one or more intervening elements exist (spatially or functionally) between the first and second elements. Where used herein, the expression “at least one of A, B, and C” should be interpreted as logic using non-exclusive logic OR (A or B or C) and not as “at least one of A, at least one of B, and at least one of C.”
[0053] In some embodiments, the controller is part of a system, and such a system may be part of the examples described above. Such a system may include semiconductor processing equipment comprising one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronic equipment for controlling system operation before, during, and after processing of semiconductor wafers or substrates. Such electronic equipment may be referred to as a “controller” and may control various components or sub-components of one or more systems. Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein. Such processes may include supplying processing gases, setting temperature (e.g., heating and / or cooling), setting pressure, setting vacuum, setting power, setting radio frequency (RF) generator settings, setting RF matching circuit settings, setting frequency, setting flow rate, setting fluid supply, setting position and operation, loading and unloading wafers to and from tools and other transfer tools connected to or interlocked with a particular system, and / or loading and unloading wafers to and from a load lock.
[0054] In a broad sense, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers that execute program instructions (e.g., software). Program instructions are instructions communicated to the controller in the form of various individual settings (or program files) that may define operating parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to realize one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.
[0055] In some embodiments, the controller may be part of a computer integrated with or coupled to the system, or otherwise networked to the system, or coupled to such a computer, or a combination thereof. For example, the controller may be in the “cloud” or may be all or part of the fab host computer system. This enables remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of fabrication operations, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, modify parameters of the current process, set processing steps following the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network. Such a network may include a local network or the internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tools to which the controller is configured to interact or control. Therefore, as described above, the controller may be distributed, for example, by including one or more separate controllers that are networked together and cooperate toward a common purpose (such as the processes and controls described herein). An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber that communicate with one or more integrated circuits that are remotely located (e.g., at the platform level or as part of a remote computer) and combined to control the processes in the chamber.
[0056] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, tracking chambers or modules, and any other semiconductor processing systems that may be used in connection with or for the fabrication and / or manufacture of semiconductor wafers.
[0057] As described above, depending on one or more process steps performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used for material handling to load and unload wafer containers to and from tool locations and / or load ports within the semiconductor manufacturing plant.
Claims
1. A base assembly, A base plate having a plurality of gas through holes and a stem extending from the base plate, The plurality of gas penetration holes extend from the first surface of the base plate to the second surface of the base plate at a location radially outward from the stem. The base and A collar positioned around the openings of the plurality of gas through holes located on the stem of the base and the second surface of the base. Equipped with, The collar defines an annular volume between the inner surface of the collar and the outer surface of the stem of the base, The first surface of the color forms a surface seal with the second surface of the base. Base assembly.
2. A base assembly according to claim 1, A base assembly further comprising a base support structure attached to the distal end of the stem.
3. A base assembly according to claim 2, A base assembly further comprising an O-ring positioned between the distal end of the stem and the base support structure.
4. A base assembly according to claim 1, A base assembly comprising a base support structure attached to the flange of the stem, the stem of the base including a flange extending radially outward at its bottom edge.
5. A base assembly according to claim 2, The aforementioned collar is a base assembly that is attached to the base support structure.
6. A base assembly according to claim 5, A base assembly further comprising an O-ring positioned between the distal end of the collar and the base support structure.
7. A base assembly according to claim 2, The base support structure includes a cylindrical body having side walls, the vertical bore in the side walls defining a gas channel, the gas channel being in fluid communication with the annular volume and the plurality of gas through-holes, the base assembly.
8. A base assembly according to claim 2, The base support structure is a base assembly comprising a cylindrical body defining an internal cavity and a flange extending radially outward from the upper surface of the cylindrical body.
9. A base assembly according to claim 8, A base assembly further comprising one or more clamps for connecting a flange located at the distal end of the stem to the flange extending radially outward from the cylindrical body of the base support structure.
10. A base assembly according to claim 8, A base assembly comprising a collar, each including first and second flanges located on its upper and lower surfaces, and further comprising clamps positioned around the flanges of the base support structure and the second flange of the collar.
11. A base assembly according to claim 10, A base assembly further comprising an O-ring positioned between the second surface of the second flange and the upper surface of the clamp.
12. A base assembly according to claim 7, A first valve configured to selectively connect the gas channel, the annular volume, and the gas through-hole to a vacuum source, A controller configured to selectively control the first valve and supply vacuum to the gas channel, the annular volume, and the gas through-hole during substrate processing, A base assembly that further enhances the features.
13. A base assembly according to claim 12, A base assembly further comprising a second valve configured to selectively connect the gas channel, the annular volume, and the gas through-hole to a purge gas source, wherein the controller is further configured to selectively control the second valve to purge the gas channel, the annular volume, and the gas through-hole.
14. A base assembly according to claim 7, A valve configured to selectively connect the gas channel, the annular volume, and the gas through-hole to a purge gas source, A controller configured to selectively control the valve and purge the gas channel, the annular volume, and the gas through-hole, A base assembly that further enhances the features.
15. A base assembly according to claim 1, The aforementioned base is a base assembly made of ceramic.
16. A base assembly according to claim 1, The aforementioned base is a base assembly made of aluminum nitride.
17. A base assembly according to claim 1, The aforementioned collar is a base assembly made of ceramic.
18. A base assembly according to claim 1, The aforementioned collar is a base assembly made of alumina.
19. A base assembly according to claim 1, The second surface of the base plate and the upper surface of the stem have a surface roughness of 20 microinches or less (R a The base assembly is polished to a high standard.
20. A base assembly according to claim 1, The aforementioned surface-to-surface seal is a base assembly comprising a plane-to-plane seal.
21. A base assembly according to claim 1, The second surface of the base plate and the upper surface of the stem have a surface roughness of 16 microinches or less (R a The base assembly is polished to a high standard.
22. A base assembly according to claim 1, The second surface of the base plate and the upper surface of the stem have a surface roughness (R) in the range of 3 to 8 microinches. a The base assembly is polished to a high standard.
23. A base assembly, A base plate having a plurality of gas through holes and a stem extending from the base plate, The plurality of gas penetration holes extend from the first surface of the base plate to the second surface of the base plate. The base and The collars arranged around the stem of the base and Equipped with, The base plate has a first diameter, The stem has a second diameter smaller than the first diameter. The collar has a third diameter that is smaller than the first diameter and larger than the second diameter. The plurality of gas penetration holes are arranged in a first region of the base plate defined between the second diameter and the third diameter. The plurality of gas penetration holes are not located in the second region outside the first region, nor in the third region located inside the first region. The collar defines an annular volume between the collar and the stem of the base. Base assembly.
24. A base assembly according to claim 23, The first surface of the collar forms a surface-to-surface seal with the second surface of the base, in the base assembly.
25. A base assembly according to claim 23, A base assembly further comprising a base support structure attached to the distal end of the stem.
26. A base assembly according to claim 25, A base assembly further comprising an O-ring positioned between the distal end of the stem and the base support structure.
27. A base assembly according to claim 23, The second surface of the base plate and the upper surface of the stem have a surface roughness of 20 microinches or less (R a The base assembly is polished to a high standard.
28. A base assembly according to claim 23, The second surface of the base plate and the upper surface of the stem have a surface roughness of 16 microinches or less (R a The base assembly is polished to a high standard.
29. A base assembly according to claim 23, The second surface of the base plate and the upper surface of the stem have a surface roughness (R) in the range of 3 to 8 microinches. a The base assembly is polished to a high standard.
30. A base assembly according to claim 24, The aforementioned surface-to-surface seal is a base assembly comprising a plane-to-plane seal.
31. A base assembly according to claim 23, A base assembly in which the plurality of gas penetration holes are arranged in a circular pattern in the first region of the base plate.