Vapor deposition mask, method for manufacturing the same, and method for manufacturing a device using the vapor deposition mask

Abstract

This invention provides a vapor deposition mask with improved accuracy in the placement and size of structural elements. [Solution] A vapor deposition mask comprising a substrate having an opening that penetrates from a first surface to a second surface opposite to the first surface, and a recess provided on the first surface, and a structure disposed in the recess, wherein the structure is in contact with the side surface of the recess and protrudes to a position higher than the first surface. A vapor deposition mask comprising a substrate having an opening that penetrates from a first surface to a second surface opposite to the first surface, and a film disposed on the first surface having a hole that partially exposes the first surface, wherein the substrate and the film form a recess with the surface of the film that forms the hole as the side surface and the region of the first surface exposed by the hole as the bottom surface, and a structure is disposed in the recess that is in contact with the side surface of the recess and protrudes to a position higher than the film.

Description

Technical Field

[0001] The present disclosure relates to a vapor deposition mask suitable for forming an organic EL display or the like, a method for manufacturing the same, and a method for manufacturing a device using the vapor deposition mask.

Background Art

[0002] An organic light-emitting element (organic light-emitting diode: OLED) is a device in which a plurality of light-emitting elements are arranged in a line or matrix on a base material or substrate. The light-emitting element constituting the light-emitting device has a pair of electrodes and a light-emitting layer disposed between the pair of electrodes. The emission color of the light-emitting element can be changed by appropriately selecting the light-emitting material constituting the light-emitting layer.

[0003] In recent years, one of the processes generally used when manufacturing an organic light-emitting device using an organic light-emitting element is a vacuum deposition process using a vapor deposition mask. A plurality of openings corresponding to a pattern are formed in the vapor deposition mask, and by disposing the vapor deposition mask between the vapor deposition source and the substrate during vapor deposition, a patterned vapor deposition film reflecting the shape of the openings is formed on the substrate. At this time, the non-opening portions of the vapor deposition mask are located in drive circuits and wirings disposed outside the light-emitting area. Usually, when vapor deposition is performed with a wide gap between the vapor deposition mask and the substrate, the evaporated material wraps around from the gap between the vapor deposition mask and the substrate, and a region called vapor deposition blur or shadow is formed at the outer peripheral portion of the vapor deposition film, where the film thickness at the edge of the film becomes thinner toward the outer end. In the design of the peripheral circuit, it is necessary to secure the space of this vapor deposition blur region. If the region of vapor deposition blur can be suppressed from spreading as much as possible, the degree of freedom in the design of the peripheral circuit increases. Therefore, it is desirable to perform vapor deposition while making the gap between the vapor deposition mask and the substrate as narrow as possible.

[0004] Typically, to reduce the gap between the deposition mask and the substrate, a magnetic material is used in the deposition mask, and magnets are used on the equipment that places the substrate, so that the deposition mask and the substrate are in close contact during deposition. However, direct contact between the base material of the deposition mask and the substrate can cause damage to the surface of the drive circuit and wiring parts of the substrate, or foreign matter adhering to the deposition mask can be transferred to the substrate, resulting in dark spots and causing defects in the emission of light in the device. For this reason, Patent Document 1 proposes an invention in which a spacer made of ultraviolet-curing resin is formed on the deposition mask in order to minimize the contact area between the deposition mask and the substrate while keeping the gap between the deposition mask and the substrate narrow. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2007-95411 [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] However, the method proposed in Patent Document 1 requires the use of a screen printing plate to form the UV-curable resin spacer. Once the placement of the spacer is determined, it cannot be changed without changing the printing plate, and furthermore, forming the printing plate may be costly and time-consuming. In addition, because the positional accuracy of the screen printing itself has a significant impact, there is a possibility of large variations in the placement of the spacer.

[0007] This disclosure has been made in view of the above-mentioned issues, and the precision of the placement and size of the structure The objective is to provide a vapor deposition mask with improved performance. [Means for solving the problem]

[0008] A first aspect of the present disclosure relates to a vapor deposition mask having a substrate having an opening that penetrates from a first surface to a second surface opposite to the first surface, and a recess provided on the first surface, and a structure disposed in the recess, wherein the structure is in contact with the side surface of the recess and protrudes to a position higher than the first surface.

[0009] A second aspect of the present disclosure relates to a vapor deposition mask comprising a substrate having an opening that penetrates from a first surface to a second surface opposite to the first surface, and a film disposed on the first surface and having a hole that partially exposes the first surface, wherein the substrate and the film form a recess with the surface of the film forming the hole as the side surface and the region of the first surface exposed by the hole as the bottom surface, and a structure is disposed in the recess that contacts the side surface of the recess and protrudes to a position higher than the film.

[0010] A third aspect of this disclosure relates to a method for manufacturing a vapor deposition mask, comprising the steps of forming a recess in a substrate and fabricating a structure in the recess using a coating method.

[0011] A fourth aspect of this disclosure relates to a method for manufacturing a vapor deposition mask, comprising the steps of: forming a film on a substrate; forming recesses in the formed film; and fabricating a structure in the recesses using a coating method. [Effects of the Invention]

[0012] According to this embodiment, it is possible to provide a vapor deposition mask with improved accuracy in the placement position and size of the structure. [Brief explanation of the drawing]

[0013] [Figure 1] This is a plan view showing an example of a vapor deposition mask according to the first embodiment. [Figure 2] This is a magnified view of a portion of the vapor deposition mask according to the first embodiment. [Figure 3] This is a schematic cross-sectional view of the deposition mask according to the first embodiment. [Figure 4]It is a diagram showing an example of a method for manufacturing a vapor deposition mask according to the first embodiment. [Figure 5] It is a schematic cross-sectional view of a substrate and a vapor deposition mask according to the first embodiment. [Figure 6] It is a diagram showing another example of a vapor deposition mask according to the first embodiment. [Figure 7] It is a plan view showing a vapor deposition mask according to the second embodiment. [Figure 8] It is an enlarged view of a part of the vapor deposition mask according to the second embodiment. [Figure 9] It is a schematic cross-sectional view of a vapor deposition mask according to the second embodiment. [Figure 10] It is a diagram showing an example of a method for manufacturing a vapor deposition mask according to the second embodiment. [Figure 11] It is a diagram showing an example of a method for manufacturing a device according to the third embodiment.

Mode for Carrying Out the Invention

[0014] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings as appropriate, but the present disclosure is not limited to the embodiments described below. Also, regarding parts that are not particularly described or not particularly shown in the drawings, well-known or publicly known techniques in the relevant technical field can be applied.

[0015] (First Embodiment) A plan view of the vapor deposition mask according to the present embodiment is shown in FIG. 1. FIG. 1 is a plan view of the vapor deposition mask 1 on the surface side that contacts (faces) the substrate 2 (see FIG. 5) during vapor deposition. Here, the surface side that contacts the substrate 2 is defined as the first surface 100. The vapor deposition mask 1 includes an opening 110 that penetrates from the first surface 100 to the second surface on the opposite side of the first surface 100, and a concave portion 120 provided on the first surface 100, and a base material 101 (see FIG. 3). The concave portion 120 is formed in a concave shape with respect to the first surface 100, and when the surface side that contacts the substrate 2 is the upper side, the concave portion 120 is formed at a position lower than the first surface 100.

[0016] The evaporation mask 1 is composed of a plate-shaped base material 101 mainly made of a metal or alloy of a magnetic material, but may have a structure combined with a non-magnetic metal or resin. The plate thickness of the evaporation mask 1 is not particularly limited, but a thickness of about 50 μm to 1 mm is desirable. The opening 110 is provided to form an evaporation film necessary for the function of an organic light-emitting element or the like. Although omitted in FIG. 1, the evaporation mask 1 may be provided with an opening for an alignment mark for alignment with the substrate 2 during evaporation and an opening for a jig such as a screw or a pin necessary for fixing the evaporation mask 1 to a frame. In addition, due to the convenience of the structure of the apparatus, an opening or a notch may be provided, and an opening may be provided separately from the purpose of forming the organic light-emitting element.

[0017] FIG. 2 is an enlarged view of a part of the surface side of the evaporation mask 1 that contacts the substrate 2, that is, the first surface 100. The recess 120 is made of the same material as the evaporation mask 1 and is formed by processing the first surface 100. The structure 200 is made of a material different from the base material 101 of the evaporation mask 1 and is disposed in at least a part of the region within the recess 120. The structure 200 does not necessarily need to be disposed so as to completely fill the recess 120, and may be disposed so as to contact a part of the side surfaces on both sides of the recess 120 (for example, so as to fill a part of the region within the recess 120). That is, a plurality of structures 200 may be provided, and the plurality of structures 200 may be provided at a predetermined interval in the recess 120. In particular, in order to suppress the amount of material used for forming the structure 200, it is desirable to arrange them in a scattered manner as shown in FIG. 2.

[0018] Here, the horizontal direction in Figure 2 is defined as the X direction (first direction), and the vertical direction perpendicular to the X direction in Figure 2 is defined as the Y direction (second direction). The portion of the recess 120 extending in the X direction is defined as the first portion, and the portion extending in the Y direction is defined as the second portion. The Z direction is defined as perpendicular to both the X and Y directions, and Figures 1 and 2 are views of the deposition mask 1 in the Z direction. The structure 200 can be placed as the first structure in the first portion, and the structure 200 as the second structure can be placed in the second portion. In this case, it is preferable that the smaller of the dimensions of the first structure in the X direction and the second structure in the Y direction is 50 μm or more. It is also preferable that the larger of the dimensions of the first structure in the X direction and the second structure in the Y direction is 200 μm or less.

[0019] Figure 3 is a schematic cross-sectional view taken along the AA arrow in Figure 2. The structure 200 is formed within the recess 120, with at least a portion of it in contact with the side surface 121 of the recess 120. The structure 200 may overflow onto the first surface 100 of the deposition mask 1, but by adjusting the amount during formation, the structure 200 can be formed with almost no overflow from the recess 120. By forming it without overflow, the formation position of the structure 200 can be defined by the recess 120. Therefore, it is possible to improve the positional accuracy of the structure 200 compared to when the structure 200 is formed on a flat surface without the recess 120. In addition, the top portion 201 of the structure 200 is formed so that it fits within the recess 120 when viewed in a plan view (Z direction), as shown in Figures 1 and 2, and protrudes to a position higher than the first surface 100 of the deposition mask 1.

[0020] The depth of the recess 120 is not particularly limited as long as it is shorter than the thickness of the deposition mask 1 (i.e., does not penetrate it), but for example, 1 μm to 50 μm is preferable. In Figure 1 (plan view relative to the first surface 100), the recess 120 is shown to be formed in a grid shape surrounding each of the multiple openings 110. However, if the structure 200 can be appropriately positioned within the recess 120 so that the substrate 2 and the deposition mask 1 do not come into contact with anything other than the structure 200, then the recess 120 The pattern is not particularly limited. For example, it may be configured as a groove extending in a direction parallel to the first surface 100, or it may be arranged to surround the opening 110. If there are multiple openings 110 in the base material 101, the recesses 120 may include portions extending between the openings 110. Alternatively, the multiple recesses 120 may form an isolated, discontinuous pattern. Furthermore, it may have a ring-like shape surrounding the structure 200.

[0021] Figure 4 (schematic cross-sectional view) shows an example of a method for manufacturing the deposition mask 1. To form a recess 120 on the first surface 100 of the substrate 101 of the deposition mask 1 (opening not shown) shown in Figure 4(a), a photolithography process is used, followed by etching or laser irradiation. As a result, a recess 120 is formed in the substrate 101, as shown in Figure 4(b). The manufacturing method is not particularly limited as long as the recess 120 can be formed with a certain positional accuracy.

[0022] Next, as shown in Figure 4(c), a liquid material 202, such as resin or metal ink, is dropped into the recess 120. This creates a structure 200 as shown in Figure 4(d). While it is preferable to use an inkjet method or a coating method using a dispenser to form the structure 200, the method is not particularly limited as long as it can be formed at any position in the recess 120.

[0023] Figure 5 is an enlarged cross-sectional view illustrating an example of the relationship between the deposition mask 1 and the substrate 2 in a vacuum apparatus when depositing a vapor-deposited film onto the substrate 2 using the deposition mask 1 according to this embodiment. The substrate 2 is a substrate on which organic light-emitting elements, etc., are formed, and mainly glass substrates or silicon wafers are used, with elements for driving organic light-emitting elements such as transistors already formed on the substrate 2. The surface of the substrate 2 facing the deposition mask 1 is divided into a deposition region 300 on which the vapor-deposited film is formed and a non-deposited region 301 on which the vapor-deposited film is not formed. The non-deposited region 301 includes circuits and wiring for driving organic light-emitting elements, and also includes scribe lines for cutting between chips of multiple organic light-emitting elements formed on the substrate 2. On the deposition region 300 of the substrate 2, the material evaporated from the deposition source passes through the opening 110 of the deposition mask 1 and is deposited on the surface of the substrate 2. As a result, a pattern reflecting the shape of the opening 110 of the deposition mask 1 is formed on the deposition region 300 of the substrate 2.

[0024] During deposition, the deposition mask 1 is attracted to the substrate 2 by a magnet 520 (see Figure 11) installed in the apparatus, and the non-deposited area 301 of the substrate 2 comes into contact with the structure 200. Furthermore, the size of the structure 200 is limited and reduced in the direction parallel to the first surface 100 of the deposition mask 1 by the recess 120. This reduces the contact area between the substrate 2 and the deposition mask 1 via the structure 200. As a result, it is possible to reduce light emission defects of the light-emitting element caused by damage to the substrate 2 or transfer of foreign matter. It is more desirable for the structure 200 to come into contact with areas such as scribe lines that do not have elements or wiring, rather than on drive circuits that have elements or wiring.

[0025] When the structure 200 is positioned to contact the scribe line, the width of the scribe line may be limited by the size of the structure 200. In such cases, if the structure 200 can be fabricated finely, the width of the scribe line can be reduced. Reducing the width of the scribe line on a single substrate can increase the yield of chips that can be fabricated on a single substrate, thereby reducing the cost of the chips.

[0026] At this time, the gap between the first surface 100 and the substrate 2 is preferably about 5 μm to 50 μm. That is, it is preferable to adjust the structure 200 (top portion 201) so that it protrudes from the first surface 100 by 5 μm or more and 50 μm or less. If the gap becomes too small, the risk of the non-opening region of the deposition mask 1 coming into contact with the substrate 2 increases, and conversely, if the gap becomes too large... If the vapor deposition blur is too large, the extent of the vapor deposition blur increases. If the vapor deposition blur is large, the space reserved for vapor deposition blur in the non-vapor-deposited area 301 becomes larger. On the other hand, as in this embodiment, by making the structure 200 small, it is possible to position the structure in a location that avoids elements, wiring, circuits, etc. on the substrate side while maintaining an appropriate gap between the first surface 100 and the substrate 2. This makes it possible to reduce the chip size.

[0027] The recesses 120 may not be groove-shaped, but may be formed as a series of scattered holes as shown in Figure 6(a), or as a combination of holes and grooves. In the case of multiple scattered holes, it is not necessary to form the structure 200 in all of the holes; the structure 200 may be formed in only some of the scattered holes as shown in Figure 6(b). Alternatively, the multiple recesses 120 may be arranged so as to surround the opening 110.

[0028] In the above embodiment, the structure 200 is formed at any position within the recess 120 that is pre-formed in the deposition mask 1. This makes it possible to create a deposition mask with improved accuracy in the placement position and size of the spacers. By pre-positioning the recess 120 in a location that overlaps with an area on the substrate side that does not have elements or wiring, such as a scribe line, the width of the scribe line can be reduced if the width of the scribe line is determined by the size of the structure 200. This makes it possible to increase the yield of chips per substrate. In addition, the structure can be positioned to avoid elements, wiring, circuits, etc. on the substrate side while maintaining an appropriate gap between the first surface 100 and the substrate 2. This makes it possible to reduce the chip size.

[0029] During vapor deposition, the small size of the structure 200 in the direction parallel to the first surface 100 allows the vapor deposition mask to be positioned so that the structure 200 is located in a position that avoids elements, wiring, circuits, etc. on the substrate 2, while maintaining a narrow gap between the substrate 2 and the vapor deposition mask 1. This reduces vapor deposition blurring and allows for miniaturization of the chip size while ensuring chip reliability. Furthermore, since the manufacturing method of this embodiment can be formed without using a printing plate, the cost of chip manufacturing can be reduced compared to forming the structure by screen printing. Note that the matters described using Figures 5 and 6 can also be applied to Embodiment 2, which will be described later.

[0030] (Second Embodiment) Figure 7 shows a plan view of the deposition mask according to this embodiment. Figure 7 is a plan view of the side of the deposition mask 1B that contacts the substrate 2 during deposition. Here, the side that contacts the substrate 2 is referred to as the first surface 100 (see Figure 9). The deposition mask 1B includes a substrate 101 having an opening 110B that penetrates from the first surface 100 to the second surface opposite the first surface 100, and a film 130 disposed on the first surface 100 and having holes that partially expose the first surface 100. The film 130 is processed to form holes that penetrate the film 130 so as to expose the first surface 100. As a result, a recess 140 is formed in which the region of the film 130 forming the holes becomes the side surface 141 (see Figure 9), and the region of the first surface 100 exposed by the holes becomes the bottom surface. When the side that contacts the substrate 2 is considered the top, the recess 140 is formed at a lower position than the surface of the film 130.

[0031] The deposition mask 1B consists of a plate-shaped substrate 101 mainly composed of a magnetic material, such as a metal or alloy, but it may also be a combination of a non-magnetic metal or resin. The thickness of the deposition mask 1B is not particularly limited, but a thickness of approximately 50 μm to 1 mm is desirable. The opening 110B is provided for the deposition of the vapor-deposited film necessary for the organic light-emitting element to function. Although omitted in Figure 7, the deposition mask 1B may also have openings for alignment marks to align with the substrate 2 during deposition, and openings for jigs such as screws and pins necessary to fix the deposition mask 1B to the frame. Furthermore, due to the structure of the apparatus, openings such as openings and notches may be provided for purposes other than forming the organic light-emitting element. There is.

[0032] Figure 8 shows a magnified view of a portion of the first surface 100, specifically the side of the deposition mask 1B that contacts the substrate 2. A film 130 is formed on the deposition mask 1B to create a recess 140. The material constituting the bottom surface of the recess 140 (i.e., the substrate 101 of the deposition mask 1B) and the material constituting the film 130 are made of different materials. The structure 200 is made of a different material from the substrate 101 of the deposition mask 1B and is placed on at least a portion of the recess 140. The structure 200 does not necessarily need to be placed to completely fill the recess 140; it may be placed to contact a portion of the sides of the recess 140 (for example, to fill a portion of the recess 140). In other words, there may be multiple structures 200, and multiple structures 200 may be provided in the recess 140 at predetermined intervals. In particular, to reduce the amount of material used to form the structure 200, it is preferable to place them in a scattered manner.

[0033] In Figure 2, the portion of the recess 120 extending in the X direction (first direction) is designated as the first portion, and the portion extending in the Y direction (second direction) is designated as the second portion. A first structure 200 can be placed in the first portion, and a second structure 200 can be placed in the second portion. In this case, it is preferable that the smaller of the dimensions of the first structure in the X direction and the second structure in the Y direction is 50 μm or more. On the other hand, it is preferable that the larger of the dimensions of the first structure in the X direction (first direction) and the second structure in the Y direction (second direction) is 200 μm or less.

[0034] Figure 9(a) is a schematic cross-sectional view taken along the line of arrow BB in Figure 8. The structure 200 is formed on the inside of the recess 140, at least in part, in contact with the side surface 141 of the recess 140. The structure 200 may overflow onto the film 130, but by adjusting the amount formed, the structure 200 can be formed with almost no overflow from the recess 140. By forming it without overflow, the formation position of the structure 200 can be defined by the recess 140. Therefore, it is possible to improve the positional accuracy of the structure 200 formation compared to when it is formed on a flat surface without the recess 140. The top portion 201 of the structure 200 is formed within the recess 140 and is formed to protrude to a position higher than the film 130 of the deposition mask 1B.

[0035] The depth of the recess 140 is not particularly limited, but is preferably about 1 μm to 5 μm. In Figure 7 (plan view of the film), the recess 140 is shown to be formed in a grid pattern surrounding each of the multiple openings 110B. However, the pattern of the recess 140 is not particularly limited as long as the structure 200 can be appropriately positioned within the recess 140 so that the substrate 2 and the deposition mask 1B do not come into contact. For example, it may be configured as a groove extending in a direction parallel to the film 130, or it may be arranged to surround the openings 110B. If multiple openings 110B are provided in the substrate 101, the recess 140 may include portions extending between the openings 110B. Alternatively, the multiple recesses 140 may form an isolated, discontinuous pattern. Furthermore, it may have a ring-like shape surrounding the structure 200.

[0036] Figure 9(b) shows an example where the film 130 in Figure 9(a) is used as a liquid-repellent film 150 to enhance the liquid-repellent properties of the structure 200. When forming the structure 200, the liquid-repellent properties of the film constituting the liquid-repellent film 150 allow the top portion 201 of the structure 200 to be raised. If the top portion 201 of the structure 200 can be raised, the distance between the substrate 2 and the deposition mask 1B during deposition can be increased, making it easier to avoid unnecessary contact between the non-openings of the deposition mask 1B and the substrate 2. Normally, during deposition, the non-opening regions of the deposition mask 1B are attracted to the substrate side by the magnet 520, so the non-opening regions between the structures 200 take on a curved shape in the direction of the substrate. Therefore, it is necessary to determine the arrangement of the structures 20 so that the non-opening regions and the substrate 2 do not come into unnecessary contact. As shown in Figure 9(b), the distance between the deposition mask 1B and the substrate 2 can be increased. This has the advantage of reducing the number of structures 200 that need to be placed, thereby reducing the load associated with placing the structures 200.

[0037] Figure 10 (schematic cross-sectional view) shows an example of a method for manufacturing the deposition mask 1B. A film 130 can be formed on the first surface 100 of the substrate 101 of the deposition mask 1B (opening not shown) shown in Figure 10(a) using a sputtering method or the like. As a result, a film 130 (150) is formed on the substrate 101, as shown in Figure 10(b). The film formation method is not particularly limited as long as the film 130 can be formed with a certain thickness accuracy. Furthermore, the material of the film 130 is not particularly limited, and oxides, nitrides, carbides, etc., can be used.

[0038] As shown in Figure 10(c), to form recesses 140 in the film 130, a photolithography process is used, followed by etching or laser irradiation. This forms the recesses 140 as shown in Figure 10(c). The manufacturing method is not particularly limited as long as the recesses 140 can be formed with a certain positional accuracy. Next, as shown in Figure 10(d), a liquid material 202 such as resin or metal ink is dropped into the recesses 140. This creates a structure 200 as shown in Figure 10(e). While it is desirable to use an inkjet method or a coating method using a dispenser to form the structure 200, the manufacturing method is not particularly limited as long as it can be formed at any position in the recesses 140.

[0039] According to this embodiment, similar to the first embodiment, it is possible to limit the contact between the deposition mask 1B and the substrate 2 to only the contact between the structure 200 and the substrate 2, thereby suppressing damage to the film on the substrate and adhesion of foreign matter when forming an organic light-emitting element by deposition. This reduces the risk of defects in the light-emitting element, making it possible to improve the quality of the organic light-emitting element.

[0040] (Third embodiment) Next, a part of the manufacturing method for devices such as light-emitting devices will be explained with reference to Figure 11, but this disclosure is not limited thereto.

[0041] In a deposition chamber, for example, at least one of the electrodes or organic layers of an organic light-emitting element can be formed on a substrate to be deposited using the following configuration. A partial method for manufacturing an organic light-emitting element includes the steps of: facing a deposition mask having a plurality of openings 110 (110B) with a substrate to be deposited on which a first electrode and an organic layer are arranged; and aligning the substrate to be deposited with the deposition mask 1 (1B). Furthermore, a partial method for manufacturing an organic light-emitting element includes the steps of: bringing the substrate to be deposited with the deposition mask 1 (1B) into contact; and forming a second electrode by depositing a deposition material 540 on the substrate through the openings 110 (110B) of the deposition mask 1 (1B).

[0042] First, as shown in Figure 11(a), a substrate 2 (substrate to be vapor-deposited) held by a substrate holding arm 510 is placed opposite a vapor deposition mask 1(1B) which is positioned on a mask stage 530 and has a plurality of openings 110(110B). Here, the substrate 2 may have a first electrode, an insulating layer that electrically isolates the first electrode, or an organic layer formed on it. Wiring, pads, circuits for driving organic light-emitting elements, etc., may also be formed on it. As the vapor deposition mask, either the vapor deposition mask 1(1B) of the first embodiment or the second embodiment can be used.

[0043] Next, as shown in Figure 11(b), for example, either the substrate 2 or the deposition mask 1, or both, are moved to align the substrate 2 and the deposition mask 1. After this, as shown in Figure 11(c), the substrate 2 and the deposition mask 1 are brought into contact by magnetic force. At this time, the substrate 2 and the deposition mask 1 are brought into contact by the magnetic force between the magnet 520, which is located on the side of the substrate 2 opposite to the deposition mask 1, and the deposition mask 1 which has metal. Next, as shown in Figure 11(d), the substrate In step 2, a deposition pattern is formed on the substrate 2 by depositing the deposition material 540 through the opening of the deposition mask 1.

[0044] The method for manufacturing organic light-emitting elements described herein is an example, and the disclosure is not limited thereto. The light-emitting element has multiple functional layers, and the deposition apparatus used for its manufacture consists of a number of deposition chambers corresponding to these functional layers. In addition to the deposition chambers, the apparatus may also include multiple process chambers such as a preparation chamber, a pre-treatment chamber, a transport chamber, a relay chamber, and a substrate stock chamber.

[0045] The embodiments described above may be modified as appropriate without departing from the technical concept. Furthermore, the disclosures in this specification include not only what is stated herein, but also all matters that can be understood from this specification and the drawings attached thereto.

[0046] This embodiment includes the following configuration. (Composition 1) A vapor deposition mask comprising a substrate having an opening that penetrates from a first surface to a second surface opposite to the first surface, and a recess provided on the first surface, and a structure disposed in the recess, wherein the structure is in contact with the side surface of the recess and protrudes to a position higher than the first surface. (Configuration 2) A vapor deposition mask comprising a substrate having an opening that penetrates from a first surface to a second surface opposite to the first surface, and a film disposed on the first surface having a hole that partially exposes the first surface, wherein the substrate and the film form a recess with the surface of the film that forms the hole as the side surface and the region of the first surface exposed by the hole as the bottom surface, and a structure is disposed in the recess that contacts the side surface of the recess and protrudes to a position higher than the film. (Composition 3) The deposition mask according to configuration 1 or 2, wherein the recess is configured as a groove extending in a direction parallel to the first surface on the first surface. (Composition 4) The deposition mask according to configuration 1 or 2, wherein the recess is arranged to surround the opening in a plan view with respect to the first surface. (Composition 5) The deposition mask according to configuration 1 or 2, wherein the substrate is provided with a plurality of openings, and the recess includes a portion that extends between the plurality of openings in a plan view with respect to the first surface. (Composition 6) The deposition mask according to configuration 1 or 2, wherein the substrate is provided with a plurality of openings, and the recesses include a portion that, in a plan view with respect to the first surface, is grid-like in shape surrounding each of the plurality of openings. (Composition 7) The vapor deposition mask according to configuration 1 or 2, having a plurality of the aforementioned structures, wherein the plurality of structures are provided in the recess at predetermined intervals. (Composition 8) A vapor deposition mask according to configuration 1 or 2, having a plurality of the aforementioned structures, wherein the plurality of structures include a first structure and a second structure, and the recess includes, in a plan view with respect to the first surface, a first portion extending in a first direction and a second portion extending in a second direction perpendicular to the first direction, the first structure being disposed in the first portion and the second structure being disposed in the second portion. (Composition 9) The deposition mask according to configuration 8, wherein the smaller of the dimensions of the first structure in the first direction and the dimensions of the second structure in the second direction is 50 μm or more. (Composition 10) The vapor deposition mask according to configuration 8, wherein the larger of the dimensions of the first structure in the first direction and the dimensions of the second structure in the second direction is 200 μm or less. (Composition 11) The vapor deposition mask according to configuration 1 or 2, wherein a plurality of recesses are provided, and the plurality of recesses are provided so as to be scattered. (Composition 12) The plurality of recesses are arranged to surround the opening in the deposition mask according to configuration 11. (Configuration 13) The aforementioned structure is a vapor deposition mask according to any one of configurations 1 to 12, wherein the structure protrudes from the first surface by 5 μm or more and 50 μm or less. (Composition 14) The structure is a vapor deposition mask according to any one of configurations 1 to 13, having a material different from the substrate. (Composition 15) The aforementioned structure is a vapor deposition mask according to any of configurations 1 to 14, formed by a coating method. (Composition 16) The substrate is a vapor deposition mask according to any of configurations 1 to 15, with a magnetic material as the main component. (Configuration 17) The deposition mask according to configuration 2, wherein the film is made of a material that has high liquid-repellent properties with respect to the structure. (Composition 18) A method for manufacturing a vapor deposition mask, comprising the steps of forming a recess in a substrate and fabricating a structure in the recess using a coating method. (Composition 19) The method for manufacturing a vapor deposition mask according to configuration 18, wherein the step of forming the recess is a step of forming the recess by etching the substrate. (Composition 20) The method for manufacturing a vapor deposition mask according to configuration 18, wherein the step of forming the recess is a step of irradiating the substrate with a laser to form the recess. (Composition 21) The process of forming a film on a substrate, The process of forming a recess in the film that has been formed, A method for manufacturing a vapor deposition mask, comprising the step of creating a structure in the recess using a coating method. (Composition 22) The method for manufacturing a vapor deposition mask according to configuration 21, wherein the step of forming the recess is a step of forming the recess by etching the film using a photolithography process. (Composition 23) The method for manufacturing a vapor deposition mask according to configuration 21, wherein the step of forming the recess is a step of irradiating the film with a laser to form the recess. (Composition 24) A method for manufacturing a device, comprising the steps of: aligning a deposition mask described in any of configurations 1 to 17 with a substrate to be deposited; and depositing a deposition material onto the substrate using the deposition mask to form a deposited film. (Composition 25) The method for manufacturing the device according to configuration 24, wherein the deposited film is the organic layer of the organic light-emitting element. [Explanation of Symbols]

[0047] 1: Evaporation mask, 100: First surface, 101: Substrate, 110: Opening, 120: Recess, 200: Structure

Claims

1. A base material having an opening that penetrates from a first surface to a second surface opposite to the first surface, and a recess provided on the first surface, The structure disposed in the recess, It has, The structure is a vapor deposition mask that contacts the side surface of the recess and protrudes to a position higher than the first surface.

2. A substrate having an opening that penetrates from the first surface to the second surface opposite the first surface, A film disposed on the first surface and having holes that partially expose the first surface, It has, The substrate and the film form a recess with the surface of the film that forms the pore as the side surface and the region of the first surface that is exposed in the pore as the bottom surface. A vapor deposition mask wherein a structure is disposed in the recess, which contacts the side surface of the recess and protrudes to a position higher than the film.

3. The deposition mask according to claim 1 or 2, wherein the recess is configured as a groove extending in a direction parallel to the first surface on the first surface.

4. The deposition mask according to claim 1 or 2, wherein the recess is arranged to surround the opening in a plan view with respect to the first surface.

5. The substrate is provided with a plurality of openings, The deposition mask according to claim 1 or 2, wherein the recess includes a portion that extends between the plurality of openings in a plan view with respect to the first surface.

6. The substrate is provided with a plurality of openings, The deposition mask according to claim 1 or 2, wherein the recess includes a portion that is grid-like in a plan view with respect to the first surface, surrounding each of the plurality of openings.

7. Having multiple of the aforementioned structures, The deposition mask according to claim 1 or 2, wherein the plurality of structures are provided in the recess at predetermined intervals.

8. Having multiple of the aforementioned structures, The plurality of structures include a first structure and a second structure, The recess is, in a plan view with respect to the first surface, A first portion extending in the first direction, It includes a second portion extending in a second direction perpendicular to the first direction, The first structure is arranged in the first part, The deposition mask according to claim 1 or 2, wherein the second structure is arranged in the second portion.

9. The vapor deposition mask according to claim 8, wherein the smaller of the dimensions of the first structure in the first direction and the dimensions of the second structure in the second direction is 50 μm or more.

10. The vapor deposition mask according to claim 8, wherein the larger of the dimensions of the first structure in the first direction and the dimensions of the second structure in the second direction is 200 μm or less.

11. Multiple recesses are provided, The deposition mask according to claim 1 or 2, wherein the plurality of recesses are provided so as to be scattered.

12. The deposition mask according to claim 11, wherein the plurality of recesses are arranged to surround the opening.

13. The deposition mask according to claim 1 or 2, wherein the structure protrudes from the first surface by 5 μm or more and 50 μm or less.

14. The vapor deposition mask according to claim 1 or 2, wherein the structure is made of a material different from the substrate.

15. The structure is formed by a coating method as described in claim 1 or 2.

16. The deposition mask according to claim 1 or 2, wherein the substrate is mainly composed of a magnetic material.

17. The deposition mask according to claim 2, wherein the film is made of a material that has high liquid repellency with respect to the structure.

18. A method for manufacturing a vapor deposition mask, comprising the steps of forming a recess in a substrate and fabricating a structure in the recess using a coating method.

19. The method for manufacturing a vapor deposition mask according to claim 18, wherein the step of forming the recess is a step of forming the recess by etching the substrate.

20. The method for manufacturing a vapor deposition mask according to claim 18, wherein the step of forming the recess is a step of irradiating the substrate with a laser to form the recess.

21. The process of forming a film on a substrate, The process of forming a recess in the film that has been formed, A method for manufacturing a vapor deposition mask, comprising the step of creating a structure in the recess using a coating method.

22. The method for manufacturing a vapor deposition mask according to claim 21, wherein the step of forming the recess is a step of forming the recess by etching the film using a photolithography process.

23. The method for manufacturing a vapor deposition mask according to claim 21, wherein the step of forming the recess is a step of irradiating the film with a laser to form the recess.

24. A method for manufacturing a device, comprising the steps of: aligning a deposition mask according to claim 1 or 2 with a substrate to be deposited; and depositing a deposition material onto the substrate using the deposition mask to form a deposition film.

25. The method for manufacturing the device according to claim 24, wherein the deposited film is the organic layer of an organic light-emitting element.

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