Heating method for substrate mounting platform, substrate processing apparatus, and susceptor

Abstract

To provide a substrate loading table that restrains a product material from adhering to a chamber wall, a substrate processing apparatus, and a method for heating a susceptor.SOLUTION: A substrate loading table comprises: a susceptor for being loaded with a substrate; a support that is formed with an internal space on the backside of the susceptor so as to support the susceptor; a bottom electrode that is provided in the internal space; a power source for supplying electric power to the bottom electrode; and a plasma production gas supply part that supplies gas for producing plasma into the internal space.SELECTED DRAWING: Figure 2

Description

Technical Field

[0004] , Plasma is generated in the internal space to heat the susceptor. , , ,

[0005] , , ,

[0006] , , , , , has a magnet

[0001] The present disclosure relates to a substrate mounting table, a substrate processing apparatus, and a method for heating a susceptor.

Background Art

[0002] Patent Document 1 discloses a film forming apparatus for forming a SiC film on a substrate to be processed, which includes a susceptor heated by induction heating, a mounting table disposed in the susceptor and rotating about a rotation axis with the substrate to be processed mounted thereon, and a gas supply mechanism for supplying a processing gas from the side to the internal space of the susceptor so that the processing gas flows along the surface of the substrate to be processed mounted on the mounting table.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] One aspect of the present disclosure provides a substrate mounting table, a substrate processing apparatus, and a method for heating a susceptor that suppress the adhesion of products to the chamber wall.

Means for Solving the Problems

[0005] A substrate mounting table according to one aspect of the present disclosure includes a susceptor on which a substrate is mounted, a support that forms an internal space on the back side of the susceptor to support the susceptor, and a lower electrode provided in the internal space , has a magnet a power supply that supplies power to the lower electrode, and a plasma generation gas supply unit that supplies a gas for generating plasma to the internal space. Plasma is generated in the internal space to heat the susceptor. .

Effects of the Invention

[0006] According to one aspect of this disclosure, a substrate mounting platform, a substrate processing apparatus, and a method for heating a susceptor are provided to suppress the adhesion of products to the chamber wall. [Brief explanation of the drawing]

[0007] [Figure 1] A cross-sectional view showing the configuration of an example of a substrate processing apparatus according to one embodiment. [Figure 2] A cross-sectional view showing the configuration of an example of a substrate processing apparatus in a film deposition process. [Figure 3] A time chart showing an example of substrate processing equipment control in a film deposition process. [Figure 4] A cross-sectional view showing the configuration of an example of a substrate processing apparatus in a cleaning process. [Figure 5] A time chart showing an example of substrate processing equipment control during the cleaning process. [Modes for carrying out the invention]

[0008] The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted.

[0009] <Substrate Processing Device 1> An example of a substrate processing apparatus 1 according to one embodiment will be described with reference to Figure 1. Figure 1 is a cross-sectional view showing the configuration of an example of a substrate processing apparatus 1 according to one embodiment. The substrate processing apparatus 1 will be described as a thermal CVD (Chemical Vapor Deposition) apparatus that deposits a SiC film on a wafer (substrate) W.

[0010] Chamber 10 is made of a metal such as aluminum and has a bottomed, substantially cylindrical shape. Chamber 10 forms a processing space 10S and houses wafers W within the processing space 10S. An inlet / outlet for loading and unloading wafers W is formed in the side wall of Chamber 10. The inlet / outlet is opened and closed by a gate valve 11.

[0011] The gas supply unit 12 supplies a processing gas or a cleaning gas to the processing space 10S. The processing gas is used when forming a SiC film on the wafer W, and can be a mixed gas such as H2, SiH4, C3H8, C2H2, N2, HCl, Ar, Ne, He, etc. The cleaning gas is used when cleaning products attached to the susceptor 21, etc., and can be a mixed gas such as NF3, ClF3, F2, HF, Cl2, etc.

[0012] A gas exhaust section 13 is provided at the bottom of the chamber 10. An exhaust pump 14 is connected to the gas exhaust section 13.

[0013] The substrate processing apparatus 1 also has a substrate mounting table. The substrate mounting table includes a susceptor 21, a heat insulating material 22, a rotating support 23, a rotating drive unit 24, a lower electrode 31, a fixed support 34, a lifting drive unit 35, a power supply 36, a cooling water supply unit 38, a plasma generation gas supply unit 40, and the like.

[0014] A susceptor 21 for horizontally supporting the wafer W is provided inside the chamber 10. The susceptor 21 is made of carbon. The susceptor 21 is heated by the plasma 100 described later, and heat is transferred from the susceptor 21 to the wafer W, thereby heating the wafer W to a desired film deposition temperature (for example, 1500°C).

[0015] The susceptor 21 is supported by the rotating support 23 via an insulating material 22. The insulating material 22 suppresses heat transfer between the susceptor 21 and the rotating support 23. The rotating support 23 has a housing portion 23a and a cylindrical portion 23b. The housing portion 23a is placed inside the chamber 10 and has a bottomed, substantially cylindrical shape. The upper part of the housing portion 23a is closed by the susceptor 21, forming an internal space 23S. The cylindrical portion 23b is formed below the housing portion 23a and penetrates the bottom surface of the chamber 10. A magnetic fluid seal 15 is provided between the bottom surface of the chamber 10 and the cylindrical portion 23b. As a result, the rotating support 23 is rotatably supported and the processing space 10S is kept airtight.

[0016] The cylindrical portion 23b is connected to a rotation drive unit 24 provided below the chamber 10. The rotation drive unit 24 is constituted by, for example, a DD (direct drive) motor. The rotation drive unit 24 has a function of rotating the susceptor 21 as shown in the rotation direction 24b by rotating the cylindrical portion 23b as shown in the rotation direction 24a. Thereby, the rotation drive unit 24 can rotate the susceptor 21 and the wafer W placed on the susceptor 21 about an axis perpendicular to the placement surface of the susceptor 21.

[0017] The temperature detection unit 25 detects the temperature of the susceptor 21.

[0018] A plurality of lower electrodes 31 are provided in the internal space 23S. The lower electrode 31 is formed of a non-magnetic material such as SUS (stainless steel). A permanent magnet 32 and a yoke 33 are provided inside the lower electrode 31. The permanent magnet 32 forms a magnetic field. When generating the plasma 100 described later, electrons are trapped in the magnetic field of the permanent magnet 32, and the plasma can be maintained at low power. Also, by providing the permanent magnet 32, the region for generating the plasma 100 can be controlled. The yoke 33 is formed of a magnetic material such as soft iron and is arranged so as to cover the sides and the bottom of the permanent magnet 32. Thereby, the magnetic circuit 32a of the permanent magnet 32 is concentrated upward.

[0019] The lower electrode 31 is supported by a fixed support 34 via a lifting drive unit 35. The fixed support 34 has a plate portion 34a and a shaft portion 34b. The plate portion 34a is arranged in the internal space 23S of the rotary support 23 and has a substantially disc shape. The shaft portion 34b is formed below the plate portion 34a and penetrates the cylindrical portion 23b of the rotary support 23. A magnetic fluid seal 16 is provided between the inner peripheral surface of the cylindrical portion 23b of the rotary support 23 and the outer peripheral surface of the shaft portion 34b of the fixed support 34. Thereby, the fixed support 34 is fixed, the rotary support 23 is rotatably supported, and the inside of the internal space 23S is kept airtight.

[0020] The lifting drive unit 35 is fixed to the plate portion 34a of the fixed support 34 at the lower part and supports the lower electrode 31 at the upper part. The lifting drive unit 35 is composed of, for example, a rotary linear motion mechanism constituted by a ball screw and a motor, and a telescopic rubber that houses the rotary linear motion mechanism. The lifting drive unit 35 has a function of lifting and lowering the lower electrode 31 as shown in the lifting direction 35a. Note that the lifting drive unit 35 may be provided individually for a plurality of lower electrodes 31 and configured to be able to lift and lower the lower electrodes 31 independently, or may be configured to be able to lift and lower a plurality of lower electrodes 31 integrally.

[0021] The power supply 36 supplies power to the lower electrode 31 via the power supply line 37. The power supply 36 may be a pulsed DC power supply or an RF power supply. By supplying power to the lower electrode 31, the plasma 100 is generated.

[0022] The cooling water supply unit 38 supplies cooling water to a flow path (not shown) provided in the lower electrode 31 via the water supply line 39. The cooling water discharged from the flow path provided in the lower electrode 31 circulates to the cooling water supply unit 38 via a discharge line (not shown). Thereby, the lower electrode 31, the permanent magnet 32, and the yoke 33 heated by the plasma 100 are cooled.

[0023] The plasma generation gas supply unit 40 supplies plasma generation gas to generate plasma in the internal space 23S of the rotating support 23 via the gas line 41. The gas line 41 is also provided with a pressure detection unit 42 for detecting the pressure of the gas supplied to the internal space 23S. The gas line 41 is also provided with an exhaust pump 43 for exhausting the gas from the internal space 23S. The plasma generation gas is used to generate plasma in the internal space 23S and heat the susceptor 21, and can be a gas with a small molecular weight, such as H2 or He. In other words, a plasma generation gas can be used that has a sputtering yield that is an order of magnitude lower or more than when sputtering the carbon susceptor 21 with an Ar gas plasma. Note that the plasma generation gas may be a mixed gas in which Ar or the like is added to a gas with a low sputtering yield, such as H2 or He. That is, the plasma generation gas can be a gas containing at least one of He or H2.

[0024] The control unit 50 is, for example, a computer and includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or auxiliary storage device and controls the operation of the substrate processing device 1. The control unit 50 may be located inside or outside the substrate processing device 1. If the control unit 50 is located outside the substrate processing device 1, the control unit 50 can control the substrate processing device 1 by communication means such as wired or wireless.

[0025] <Film deposition process> Next, an example of a substrate processing apparatus 1 in a film deposition process will be described using Figures 2 and 3. Figure 2 is a cross-sectional view showing the configuration of an example of a substrate processing apparatus 1 in a film deposition process. Figure 3 is a time chart showing an example of the control of the substrate processing apparatus 1 in a film deposition process.

[0026] As shown in Figures 2 and 3, the control unit 50 controls the lifting drive unit 35 to position the lower electrode 31 in a lower position (down). The processing space 10S is evacuated by the exhaust pump 14 and reduced to a predetermined vacuum atmosphere. The internal space 23S is evacuated by the exhaust pump 43 and reduced to a predetermined vacuum atmosphere.

[0027] The control unit 50 opens the gate valve 11, opening the loading / unloading port. The substrate transport device (not shown) transports the wafer W from the loading / unloading port and places it on the susceptor 21. When the substrate transport device moves away from the loading / unloading port, the control unit 50 closes the gate valve 11.

[0028] Next, the control unit 50 controls the rotation drive unit 24 to rotate the susceptor 21.

[0029] Next, the control unit 50 controls the plasma generation gas supply unit 40 to supply plasma generation gas to the internal space 23S and controls the power supply 36 to supply power to the lower electrode 31. Here, because the lower electrode 31 having a permanent magnet 32 ​​is positioned in the lower position shown in Figure 2, plasma 100 is generated on the back side of the susceptor 21. The generated plasma 100 locally heats the susceptor 21. In addition, by using a gas with a low sputter yield (H2, He, etc.) as the plasma generation gas, damage to the susceptor 21 can be suppressed. Furthermore, as the susceptor 21, supported by the rotating support 23, rotates while the lower electrode 31, supported by the fixed support 34, is fixed, the susceptor 21 is heated uniformly in the radial direction.

[0030] Next, the control unit 50 controls the gas supply unit 12 to supply the processing gas to the processing space 10S. This allows the SiC film to be deposited on the wafer W heated by the susceptor 21. As the susceptor 21 rotates, the film can be deposited uniformly in the circumferential direction of the wafer W. In addition, the susceptor 21 and the wafer W are heated, suppressing the heating of the chamber 10 wall. This prevents the product from adhering to the chamber 10 wall.

[0031] When the film deposition process is complete, the control unit 50 stops the gas supply from the gas supply unit 12, stops the gas supply from the plasma generation gas supply unit 40, stops the power supply from the power supply 36, and stops the rotary drive unit 24. Then, the control unit 50 opens the gate valve 11 and opens the loading / unloading port. The substrate transport device (not shown) loads the wafer W out of the loading / unloading port. When the substrate transport device moves away from the loading / unloading port, the control unit 50 closes the gate valve 11.

[0032] <Cleaning Process> Next, an example of the substrate processing apparatus 1 in the cleaning process will be described using Figures 4 and 5. Figure 4 is a cross-sectional view showing the configuration of an example of the substrate processing apparatus 1 in the cleaning process. Figure 5 is a time chart showing an example of the control of the substrate processing apparatus 1 in the cleaning process.

[0033] As shown in Figures 4 and 5, the control unit 50 controls the lifting drive unit 35 to position the lower electrode 31 in the upper position (up). The processing space 10S is evacuated by the exhaust pump 14 and reduced to a predetermined vacuum atmosphere. The internal space 23S is evacuated by the exhaust pump 43 and reduced to a predetermined vacuum atmosphere.

[0034] Next, the control unit 50 controls the rotation drive unit 24 to rotate the susceptor 21.

[0035] Next, the control unit 50 controls the gas supply unit 12 to supply plasma generation gas to the processing space 10S and controls the power supply 36 to supply power to the lower electrode 31. Here, because the lower electrode 31 having a permanent magnet 32 ​​is positioned in the upper position shown in Figure 4, plasma 100 is generated on the surface side of the susceptor 21. The generated plasma 100 locally heats the susceptor 21. Furthermore, by using a gas with a low sputter yield (H2, He, etc.) as the plasma generation gas, damage to the susceptor 21 can be suppressed. In addition, as the susceptor 21, supported by the rotating support 23, rotates while the lower electrode 31, supported by the fixed support 34, is fixed, the susceptor 21 is heated uniformly in the radial direction.

[0036] Next, the control unit 50 controls the gas supply unit 12 to supply cleaning gas to the processing space 10S and controls the power supply 36 to supply power to the lower electrode 31. Here, because the lower electrode 31, which has a permanent magnet 32, is positioned in the upper position shown in Figure 4, a plasma 100 of cleaning gas containing halogens such as NF3 is generated on the surface side of the susceptor 21. This removes the products adhering to the susceptor 21. In addition, as the susceptor 21 rotates, cleaning can be performed over the entire circumferential direction of the susceptor 21.

[0037] Once the cleaning process is complete, the control unit 50 stops the gas supply from the gas supply unit 12, stops the power supply from the power supply 36, and stops the rotary drive unit 24.

[0038] Although the film deposition process and cleaning process were described as examples of the operation of the substrate processing apparatus 1, the operation is not limited to these. For example, one of the lower electrodes 31 may be controlled to be in the upper position and the other in the lower position.

[0039] Although the substrate processing apparatus 1 has been described above, this disclosure is not limited to the embodiments described above, and various modifications and improvements are possible within the scope of the gist of this disclosure as described in the claims. [Explanation of symbols]

[0040] W wafer 1. Substrate processing device 10 Chambers 10S processing space 11 Gate valve 12 Gas Supply Department 13 Gas exhaust section 14. Exhaust pump 15 Magnetic fluid seals 16 Magnetic fluid seals 21 Susceptor 22 Insulation 23 Rotating support (support) 23a Enclosure 23b Cylinder part 23S interior space 24 Rotary drive unit 24a, 24b Direction of rotation 25 Temperature detection unit 31 Lower electrode 32 Permanent Magnets 32a Magnetic Circuit 33 York 34 Fixed support 34a plate part 34b Shaft 35 Lifting drive unit 35a Lifting direction 36 Power supply 37 Power supply line 38 Cooling water supply section 39 Water supply line 40 Plasma generation gas supply unit 41 Gas line 42 Pressure detection unit 43 Exhaust pump 50 Control Unit 100 Plasma

Claims

1. A susceptor on which the circuit board is mounted, A support that forms an internal space on the back side of the susceptor to support the susceptor, The lower electrode having a magnet is provided in the aforementioned internal space, A power supply that provides power to the lower electrode, The system includes a plasma generation gas supply unit that supplies a gas for generating plasma into the internal space, Plasma is generated in the internal space to heat the susceptor. Board mounting table.

2. The lower electrode has a yoke for holding the magnet. The substrate mounting stand according to claim 1.

3. The lower electrode has a lifting drive unit that raises and lowers it, A substrate mounting stand according to claim 1 or claim 2.

4. The lifting drive unit is The first position of the lower electrode generates plasma in the internal space on the back side of the susceptor to heat the susceptor, The second position of the lower electrode, which generates plasma on the surface side of the susceptor, It is configured to be able to be raised and lowered. The substrate mounting stand according to claim 3.

5. Having a rotational drive unit that rotates the susceptor, A substrate mounting stand according to any one of claims 1 to 4.

6. The unit has a cooling water supply section that supplies cooling water to the lower electrode, A substrate mounting stand according to any one of claims 1 to 5.

7. The system has a temperature detection unit that detects the temperature of the susceptor. A substrate mounting stand according to any one of claims 1 to 6.

8. The plasma generation gas supply unit uses He, H ２ A gas containing at least one of the following is supplied to the internal space. A substrate mounting stand according to any one of claims 1 to 7.

9. A substrate mounting stand according to any one of claims 1 to 8, Circuit board processing equipment.

10. A method for heating a susceptor on a substrate mounting stage, comprising: a susceptor on which a substrate is placed; a support that forms an internal space on the back side of the susceptor to support the susceptor; a lower electrode having a magnet and provided in the internal space; a power supply that supplies power to the lower electrode; and a plasma generating gas supply unit that supplies a plasma generating gas to the internal space, wherein Plasma is generated in the internal space to heat the susceptor. How to heat a susceptor.

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