Thin film, insitu measurement through transparent crystal, and transparent substrate within the processing chamber wall.

Abstract

To provide a processing system in which at least one part of a transparence crystal is embedded into a wall and a liner of a processing chamber.SOLUTION: A system contains a transparence crystal 120 of which at least one part is embedded into a wall and a liner 124 of a processing chamber. The transparence crystal contains a proximal end having a proximal surface 120A, and a distal end having a distal surface 120B exposed in an inner part of the processing chamber. A transparence thin film 307 is accumulated onto the distal surface, and has a chemical characteristic that is actually matched to a chemical characteristic of the liner. An optical coupling device 204 transmits a light 304A from a light source through the proximal end of the transparence crystal, is returned by being reflected from a combination of a front surface of the transparence thin film and the front surface of a process film layer 309 accumulated onto the transparence thin film to converse a light 304B received into a spectrometer. The spectrometer detects a first spectrum in a focus light expressing a process film layer.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure relate to thin films, in-situ measurement through transparent crystals, and transparent substrates within a processing chamber wall.

Background Art

[0002]

[0002] Changes in the surface of a processing chamber affect various processing parameters. For example, re-deposition of etching by-products on the chamber wall can change the etching rate of a given process. Thus, when a substrate is processed within the chamber, the etching rate (or other processing parameters or conditions) can change, and processing can become non-uniform between substrates.

[0003]

[0003] Currently, there is no reliable method for monitoring the surface conditions within a processing chamber, including surfaces such as liners (or inner walls), lids, electrostatic chucks (ESCs), process rings, etc. For example, the chemical, physical, and thermal states of the liner of a processing chamber are known to affect plasma processes by influencing the recombination of gas emissions near the liner. Some monitoring methods, such as capacitive monitoring or resonance frequency monitoring, are under development, but these methods are plagued by thermal noise or high-frequency noise, particularly during processing.

[0004] [[ID=I9]]

[0004] Furthermore, substrate processing tends to be inefficient and / or inaccurate due to lack of information during processing, especially as the processing equipment ages. For example, after a process shift over time within a processing chamber, changes in deposition amount (such as deposition thickness) or deposition composition can occur during processing, either of which may require discarding unacceptable batches of processed substrates. Additionally, knowing when to perform a cleaning process within the processing chamber can be a guess (based, for example, only on in-process time), and performing the cleaning process too frequently can affect the throughput of substrates. Other inefficiencies or inaccuracies in processing also exist and will be described in more detail. [Overview of the project]

[0005]

[0005] Some embodiments described herein relate to a processing system comprising a transparent crystal, wherein at least a portion of the transparent crystal is embedded in the walls and liner of the processing chamber. The transparent crystal has a proximal end and a distal end, the distal end having a distal surface exposed to the interior of the processing chamber. A transparent thin film is deposited on the distal surface of the transparent crystal, and the transparent thin film has chemical properties substantially consistent with the chemical properties of the liner. The system further includes a spectrometer and an optical coupling device coupled to the spectrometer. The optical coupling device transmits light from a light source through the proximal end of the transparent crystal and can focus the light reflected and received back into the spectrometer from a combination of the distal surface, the surface of the transparent thin film, and the surface of the process film layer deposited on the transparent thin film. The spectrometer can detect a first spectrum in the focused light representing the process film layer.

[0006]

[0006] In additional or related embodiments, the processing chamber includes a wall defining the interior of the processing chamber, a liner attached to the inner surface of the wall, and a transparent crystal, at least a portion of which is embedded in the wall and the liner. The transparent crystal has a proximal end and a distal end, the distal end having a distal surface that is substantially flush with the inner surface of the wall. The processing chamber further includes a transparent thin film deposited on the distal surface of the transparent crystal. The transparent thin film has chemical properties substantially consistent with the chemical properties of the liner. Light from outside the wall can pass through the transparent crystal, be reflected by the distal surface, be reflected by the surface of the transparent thin film, and return through the proximal end of the transparent crystal.

[0007]

[0007] In some embodiments, the relevant method includes embedding at least a portion of a transparent crystal within the walls and liner of a processing chamber. The transparent crystal has a proximal end and a distal end, the distal end having a distal surface exposed to the interior of the processing chamber. The method further includes depositing a transparent thin film having chemical properties substantially consistent with the chemical properties of the liner on the distal surface of the transparent crystal. The method further includes depositing a process film layer on the transparent thin film in the processing chamber. The method further includes transmitting light from a light source through the proximal end of the transparent crystal by an optical coupling device. The method further includes focusing the light reflected and received back from the combination of the distal end of the liner, the surface of the transparent thin film, and the surface of the process film layer into an optical fiber cable by the optical coupling device. The method further includes receiving the focused light from the optical fiber cable with a spectrometer and detecting a first spectrum representing the process film layer in the focused light with the spectrometer.

[0008]

[0008] Numerous other features are provided in accordance with these and other aspects of the present disclosure. Other features and aspects of the present disclosure will become more fully apparent from the following detailed description, claims and accompanying drawings.

[0009]

[0009] The present disclosure is illustrated, not limited, in the illustrations of the accompanying drawings, where similar reference numerals indicate similar elements. It should be noted that different references in the present disclosure to “an” or “one” embodiments do not necessarily mean the same embodiment, but rather that such references mean at least one. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic top view of an exemplary processing system according to one embodiment. [Figure 2] This is a simplified side view of a system for monitoring a processing chamber according to one embodiment. [Figure 3]This is an enlarged side view of the system in Figure 2, showing a transparent crystal embedded in the wall and liner of the processing chamber and a deposited transparent thin film, according to one embodiment. [Figure 4A] This is a simplified side view of a transparent crystal to illustrate the angles that may be formed on the proximal and distal surfaces with respect to the liner or wall in various embodiments. [Figure 4B] This is a simplified side view of a transparent crystal without surface angle according to one embodiment. [Figure 4C] This is a detailed side view of a transparent crystal having appropriate dimensions, including several angles, according to one embodiment. [Figure 5] This is a graph of reflectance versus wavelength for several different process film layers, compared to a computer model version, representing various embodiments. [Figure 6A] This is a flowchart of a method for measuring the first spectrum of a process film layer on a transparent thin film, according to one embodiment. [Figure 6B] This is a flowchart of a method, according to one embodiment, for measuring a second spectrum (without light on) of a deposited thin film in order to determine one or more optical film properties of the process film layer, along with a first spectrum. [Figure 7] This is a flowchart illustrating a method, according to various aspects of the present disclosure, for using one or more optical film properties of a thin film deposited on a transparent thin film to improve processing within a processing chamber. [Modes for carrying out the invention]

[0011]

[0020] Embodiments described herein relate to systems and methods for using interference reflectivity with respect to the liner (or inner wall) of a processing chamber to monitor the state and / or process state of the processing chamber. For example, reflectivity can be used to determine one or more optical thin film properties of a thin film layer (e.g., a process film layer) deposited on the liner surface or on a reflector surface adjacent to the liner and substantially representing the liner. Such optical thin film properties include, but are not limited to, thickness, refractive index (n) value, and absorption coefficient (k) value, which may be used to determine the composition material. In some embodiments, the determination of the process state of the processing chamber may be performed during the processing of a substrate in the processing chamber and therefore may involve compensating for the presence of plasma in the processing chamber. The plasma may include corrosive gases used to etch the substrate. In other embodiments, one or more optical thin film properties are determined before or after processing, so there is no need to compensate for plasma present during the active process.

[0012]

[0021] In various embodiments, determining the condition of the processing chamber liner generally indicates the condition of the processing chamber surface, including whether there have been any process shifts (or drifts) that require correction, such as calibration, cleaning, or replacement of other structures of the processing apparatus or processing chamber. Such process shifts can affect the performance and yield of the processed substrate. Furthermore, determining the thickness of the deposited film layer may be equivalent to the thin film deposited on the substrate being processed (if measured during processing) and can therefore be used to determine the appropriate deposition rate, amount, and the timing and extent of cleaning the processing chamber after processing. The fluorine content in the plasma can also be measured and tracked over time. Further advantages include the ability to perform reflectivity measurements with minimal disruption to the plasma space during substrate processing and the reduction of the risk of skew and particles caused by hardware. This embodiment also requires minimal changes to the design of existing liners and processing chambers.

[0013]

[0022] More specifically, the disclosed systems and methods include a light source (e.g., a broadband light source), a spectrometer (or other apparatus for recording and measuring spectra as an analytical method), and an optical coupling device such as a collimator or mirror. These embodiments, as well as processing chambers which are part of the disclosed systems, may further include a transparent crystal, at least a portion of which is embedded in the walls and liner of the processing chamber. The transparent crystal may be made of a transparent ceramic material, or of a transparent material such as sapphire, diamond, quartz, or silicon carbide. A transparent thin film (or substrate) can be formed on the surface of the transparent crystal exposed inside the processing chamber. The transparent thin film may be deposited by pre-deposition using atomic layer deposition (ALD), chemical vapor deposition (CVD), or plasma vapor deposition (PVD) of yttrium oxide, aluminum oxide, zirconium oxide, or similar transparent alloys. In one embodiment, the transparent thin film is substantially flush with the surface of the liner. The transparent thin film may also have chemical properties substantially consistent with the chemical properties of the liner.

[0014]

[0023] Specifically, transparent thin films formed on transparent crystals improve the signal-to-noise ratio (SNR) of reflected light and the measurement accuracy of the spectrometer. For example, when positioned adjacent to or flush with the liner as a separate structure, transparent thin films can enable better control of the film laminate fabricated on the transparent thin film. For example, transparent thin films can be fabricated to obtain desired optical and / or chemical properties. Desired optical properties include producing clearly visible interference fringes when a new process film layer is deposited on the transparent thin film. This can improve detection sensitivity and enhance the SNR. Desired chemical properties include, for example, high chemical resistance to process chemistry, minimizing physical or chemical changes in the transparent thin film to maximize its lifetime. Furthermore, the chemical properties should reflect the chemical properties of the liner material to ensure that the deposition on the transparent thin film is as similar as possible to the deposition on the liner.

[0015]

[0024] In various embodiments, during processing in a chamber, the photocoupler can direct light from a light source through a transparent crystal, through a transparent thin film, and onto a process film layer deposited on the transparent thin film. Thus, light passing through both the transparent crystal and the transparent thin film is reflected from their respective surfaces and combined with light reflected from the surface of the process film layer deposited on the transparent thin film. This reflected light may contain a first spectrum that matches the state of the process film layer deposited on the liner.

[0016]

[0025] In these embodiments, the optical coupling device focuses this combination of reflected light into an optical fiber cable coupled to a spectrometer. The spectrometer can detect a first spectrum of focused light representing the process film layer, which can be used to determine the optical thin film properties. The spectrometer can also detect a second spectrum of focused light when the light source is turned off during processing in the chamber. This second spectrum corresponds to the emission spectroscopy (OES) of the plasma at that moment and can be removed from the first spectrum to obtain a processable reflectance measurement signal.

[0017]

[0026] For example, embodiments of the system and method may also include a processing device (or controller) coupled to a spectrometer. The processing device may be adapted to receive a first spectrum and a second spectrum and calculate reflectance measurement data by subtracting (e.g., subtraction) the second spectrum from the first spectrum. The processing device can calculate a reflectance measurement signal by dividing (e.g., division) the reflectance measurement data by a reference spectrum that normalizes the reflectance measurement data. The reference spectrum can be obtained under known conditions, such as at the initial installation of the system.

[0018]

[0027] Next, the processing device can fit the reflectance measurement signal to a thin-film optical model to determine information including one or more optical thin-film properties of the process film layer. Such optical thin-film properties include, but are not limited to, thickness, the value of the refractive index (n), the value of the absorption coefficient (k), and the composition material, as will be discussed in detail. In some embodiments, assumptions can be made about the plasma used, the expected deposition thickness, the estimated prior film accumulation, etc., in order to fit the data of the reflectance measurement signal to the thin-film model to determine the composition material of the process film layer. Next, one or more optical thin-film properties can notify the determination of specific endpoints related to the process executed in the processing chamber, such as whether to adjust the deposition rate, when to stop depositing a chemical or plasma, when to start cleaning the processing chamber, when to stop cleaning the processing chamber, and the process drift amount or the consumed chamber lifetime (but not limited to these).

[0019]

[0028] In one embodiment, for example, a processing device (or controller) compares the thickness of a process film layer on a transparent thin film with a baseline measurement obtained, for example, when the processing chamber was first activated. If this value deviates beyond a threshold variation (for example, the thickness of the process film layer), the processing device can trigger a process within the processing chamber to correct the deposition rate of the process film layer. The processing device may also change the process to restore the process state, warn the user of the processing chamber of the process shift, or perform other actions described later.

[0020]

[0029] Figure 1 is a schematic top view of an exemplary processing system 100 according to one aspect of the present disclosure. The processing system 100 includes a transfer chamber robot 101 and a factory interface robot 121, respectively, adapted to pick and place substrates 110 (sometimes referred to as “wafers” or “semiconductor wafers”) from or to destinations within an electronic device processing system such as the processing system 100 shown in Figure 1. However, any type of electronic device substrate, mask, or other silica-containing substrate (generally referred to herein as “substrates”) may be transported and transferred by the disclosed robots. For example, the destination of the substrate 110 may be one or more processing chambers 103 and / or load lock devices 107A, 107B which are distributed around a transfer chamber 114 and can be coupled to it. As shown, the transfer of the substrate can be carried out, for example, via a slit valve 111.

[0021]

[0030] The processing system 100 may further include a main frame 102 containing a transfer chamber 114 and at least two processing chambers 103. The housing of the main frame 102 contains the transfer chamber 114. The transfer chamber 114 may include a top wall (not shown), a bottom wall (floor) 139, and side walls, and in some embodiments, it may be maintained under vacuum, for example. In the illustrated embodiment, the transfer chamber robot 101 is mounted on the bottom wall (floor) 139. However, the transfer chamber robot 101 may also be mounted in other locations, such as the top wall.

[0022]

[0031] In various embodiments, the processing chamber 103 may be adapted to perform any number of processes on the substrate 110. These processes may include deposition, oxidation, nitriding, etching, polishing, cleaning, lithography, and measurement. Other processes may also be performed. Load lock devices 107A, 107B may be adapted to interface with the factory interface 117 or other system components, which can receive the substrate 110 from a substrate carrier 119 (e.g., a front-opening integrated pod (FOUP)) that can dock to a load port of the factory interface 117. The substrate 110 can be transferred between the substrate carrier 119 and each load lock device 107A, 107B using the factory interface robot 121 (shown by a dotted line). The transfer of the substrate 110 can be performed in any order or direction. In some embodiments, the factory interface robot 121 may be identical (or similar) to the transfer chamber robot 101, but may further include a mechanism that allows the factory interface robot to move in any lateral direction indicated by arrow 123. Any other suitable robot can be used as the factory interface robot 121.

[0023]

[0032] In the embodiment, and as an exemplary description of any robot, the transfer chamber robot 101 includes at least one arm 113 (e.g., a robotic arm) and at least one end effector 115 coupled to the arm 113. The end effector 115 is controllable by the transfer chamber robot 101 to pick up the substrate 110 from the load locking device 107A or 107B, guide the substrate 110 through one of the slit valves 111 of the processing chamber 103, and precisely place the substrate 110 on the substrate support of the processing chamber 103.

[0024]

[0033] In various embodiments, one or more processing chambers 103 may contain transparent crystals 120, at least a portion of which are embedded in the walls and liners 124 (e.g., inner walls) of the processing chambers 103. In the disclosed embodiments, light can be collimated and directed to pass through the transparent crystals 120 to produce reflected light. As will be described in more detail with reference to Figures 2-6, the reflected light can then return through the transparent crystals 120. The reflected light can be focused into an optical fiber cable coupled to a spectrometer 125 for spectral analysis. The spectrometer 125 can perform reflectance measurements to determine one or more spectra of the focused light which can be used to determine at least one optical property of a process film layer deposited on a transparent thin film of the transparent crystal, whether during or after substrate processing.

[0025]

[0034] The controller 109 (e.g., a tool and equipment controller) can control various aspects of the processing system 100, such as the gas pressure in the processing chamber 103, individual gas flow rates, spatial flow ratios, temperatures of various chamber components, and the radio frequency (RF) or electrical state of the processing chamber 103. The controller 109 can receive signals from the factory interface robot 121, the transfer chamber robot 101, one or more sensors, and / or other processing components of the processing system 100, and send commands to them. In this way, the controller 109 can control the start and stop of processing, and adjust the deposition rate, the type or ratio of the deposition composition, etc. The controller 109 can also receive and process sensing data from various sensors.

[0026]

[0035] In various embodiments, the controller 109 includes (or is coupled to) a processing device 130, which is coupled to the spectrometer 125. The processing device 130 may be configured to receive and process sensing data, including the results of a reflectance measurement performed by the spectrometer 125, including the first and second spectra described above. The processing device 130 can calculate the reflectance measurement signal by subtracting the second spectrum from the first spectrum. The processing device can then fit the reflectance measurement signal to a thin-film optical model to determine information including one or more optical thin-film properties of the process film layer. Depending on the results of the analysis of one or more optical film properties, the processing device 130 (e.g., the controller 109) can direct the processing chamber 103 to process change or adjustment. For example, the controller 109 can adjust processing parameters or settings such as, for example, the deposition rate, the type or ratio of the deposited composition, the timing of performing the cleaning process in the processing chamber, and other operations which will be described in more detail with reference to Figure 7.

[0027]

[0036] The controller 109 and / or processing device 130 may be a computing device such as a personal computer, server computer, programmable logic controller (PLC), or microcontroller, and / or may include a computing device. The controller 109 and / or processing device 130 may include (or be) one or more processing devices, which may be general-purpose processing devices such as a microprocessor or central processing unit. More specifically, the processing device may be a composite instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor implementing another instruction set, or a processor implementing a combination of instruction sets. The processing device may also be one or more dedicated processing devices, such as an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a digital signal processor (DSP), or a network processor. The controller 109 and / or processing device 130 may include data storage devices (e.g., one or more disk drives and / or solid-state drives), main memory, static memory, a network interface, and / or other components. The processing device 130 can execute instructions for performing one or more of the methods and / or embodiments described herein. Instructions may be stored in a computer-readable storage medium, which may include main memory, static memory, secondary storage, and / or the processing device (while the instructions are being executed).

[0028]

[0037] Figure 2 shows a simplified side view of a system 200 for monitoring a processing chamber according to one aspect of the present disclosure. The system 200 may include, for example, a processing chamber 103 having a liner 124, as shown in Figure 1. The processing chamber 103 may include a wall 222 to which the liner 124 is mounted. The liner 124 is specially designed to have high chemical resistance to process chemistry, minimizing physical or chemical changes to the liner to maximize its lifespan. Furthermore, as shown, at least a portion of a transparent crystal 120 may be embedded within the wall 222 and the liner 124. The transparent crystal 120 may be made of a transparent ceramic material, or of a durable transparent material such as sapphire, diamond, quartz, silicon carbide, or a combination thereof.

[0029]

[0038] In one embodiment, the system 200 further includes a light source 201 (e.g., a broadband light source or other electromagnetic radiation source), an optical coupling device 204 (e.g., a collimator or mirror), a spectrometer 225, a controller 109, and a processing device 130. The light source 201 and the spectrometer 225 may be optically coupled to the optical coupling device 204 via one or more optical fiber cables 232.

[0030]

[0039] In one embodiment, the light source 201 is a flash lamp limited to a wavelength range of 200 to 800 nanometers (nm), a pulsed xenon light source, and has a flash output variation of less than 0.5% sigma across the entire wavelength range in the open loop. In other embodiments, the wavelength range may vary further and may be set, for example, near the near-infrared wavelength. The variable output control of the light source 201 can be between 45% and 100%, and the output degradation over a lifetime of at least one year can be less than 8%, thereby providing more than one billion flashes. Additional or different embodiments of the light source 201 with various functions and wavelengths are envisioned.

[0031]

[0040] In various embodiments, the optical coupling device 204 may be adapted to collimate light in two directions along the optical path or to transmit light in other ways. The first direction may include light from the light source 201, which is collimated and transmitted through the transparent crystal 120 into the processing chamber 103. The second direction may be reflected light from the transparent crystal 120 returning into the optical coupling device 204, which will be described in more detail with reference to Figure 3. The reflected light may be focused within the optical fiber cable 232 and thus directed towards the spectrometer 225 in the second direction along the optical path. Furthermore, the optical fiber cable 232 may be coupled between the spectrometer 225 and the light source 201 to efficiently transmit light from the light source 201 to the transparent crystal 120 and back to the spectrometer 225.

[0032]

[0041] In an embodiment, the spectrometer 225 also has a wavelength range of 200–800 nm, a wavelength resolution of less than 2 nm full width at half maximum, a dynamic range of at least 16 bits, a noise floor of less than 32 counts, and a sampling rate of 6 milliseconds (ms) or faster. The spectrometer 225 may require calibration at the same or longer schedule than the light source 201. The spectrometer 225 may be adapted to detect the spectrum of reflected light received from the optical coupling device 204 (e.g., light reflected back from the transparent crystal 120 and focused into the optical fiber cable 232 by the optical coupling device 204).

[0033]

[0042] In various embodiments, the controller 109 includes or is coupled to a processing device 130 and includes or is coupled to a memory 134 or other computer storage device. The controller 109 may be coupled to both the light source 201, the spectrometer 225, and the processing chamber 103. The controller 109 can turn on the flash of the light source 201 and then receive a first spectrum from the spectrometer 225. The controller 109 can also keep the light source off and receive a second spectrum from the spectrometer 225 when the light source 201 is off. The second spectrum may represent the OES of a plasma or chemical process in the processing chamber. The processing device 130 can subtract the second spectrum from the first spectrum to determine the reflectance measurement signal at a given moment. The processing device 130 can then mathematically fit the reflectance measurement signal to one or more thin-film models to determine one or more optical thin-film properties of process film layers deposited on a transparent thin film of transparent crystal 120.

[0034]

[0043] In some embodiments, one or more optical thin film properties include the thickness of the deposited film, as well as the values ​​of the refractive index (n) and the absorption coefficient (k). The refractive index is the ratio of the speed of light in a vacuum to the speed of light in the process film layer. The absorption coefficient is a measure of the amount of light absorbed by the process film layer. The processing device 130 can use the n and k values ​​to determine the composition of the process film layer. The processing device 130 can be further configured to analyze the data of one or more optical film properties and, based on the analysis, trigger a new process in the processing chamber 103 or update the current process. Such updates may include alerts, which are described in more detail with reference to Figure 7.

[0035]

[0044] Figure 3 is an enlarged side view of the system in Figure 2, showing a transparent crystal 120 embedded in the wall 222 and liner 124 of the processing chamber 303 according to one embodiment. The transparent crystal 120 may have a proximal end and a distal end, the proximal end having a proximal surface 120A that receives light from the photocoupler 204, and the distal end 120B having a distal surface 120B that reflects light back to the photocoupler 204 through the proximal surface 120A. In one embodiment, the distal surface 120B of the transparent crystal 120 may be close to the processing chamber 303 and may be substantially flush with the inner surface of the wall 222.

[0036]

[0045] In various embodiments, the transparent crystal 120 may be plug-shaped (e.g., plug-shaped) and may include a shaft 301 and a flange 305 formed integrally with or attached to the shaft 301. The plug may be a sapphire plug, a diamond plug, a quartz plug, or a silicon carbide plug. The shaft 301 and / or flange 305 may be square, rectangular, cylindrical, or other shapes. For ease of illustration, both the shaft 301 and flange 305 are shown as cylindrical. As described, the transparent crystal 120 can be made from transparent gemstones such as sapphire, diamond, quartz, or silicon carbide and can provide a hard, light-reflecting material that is resistant to change. The shaft 301 can be embedded in the wall 222 and liner 124 such that its distal surface is exposed inside the processing chamber 303.

[0037]

[0046] The flange 305 may be adjacent to the outer surface of the wall 222. In one embodiment, a seal 313 is positioned between the flange and the outer surface of the wall 222. The seal 313 may be, for example, an O-ring seal, a rectangular seal or gasket seal, a valve seal, etc. The material of the seal 313 may be a propylene diene monomer, a fluoroelastomer, etc. The flange 305 may have an inner surface that is in physical contact with the seal 313, and the inner surface may include a surface roughness (Ra) of less than 20 nanometers or a scratch-dig value of at least 80 / 50, which is an optical specification used for surface roughness. A very smooth inner surface of the flange 305 may help to provide a tight seal between the less clean atmosphere outside the processing systems 100, 200 and the highly clean and filtered air of the processing chamber 303, which may be under vacuum.

[0038]

[0047] In various embodiments, a transparent thin film 307 may be deposited on the distal surface 120A of the shaft 301 of the transparent crystal 120, for example, by atomic layer deposition (ALD). In some cases, the transparent thin film 307 is deposited on the transparent crystal 120 before the transparent crystal 120 is embedded within the wall 222 and liner 124. The transparent thin film 307 may be exposed inside the processing chamber 303. In some embodiments, as described above, the transparent thin film 307 is made to be substantially flush with the liner 124 and to have chemical properties substantially consistent with the chemical properties of the liner. In various embodiments, the transparent thin film 307 is yttrium oxide, aluminum oxide, zirconium oxide, or a combination thereof to make a similar transparent alloy. In one embodiment, the transparent thin film 307 is yttrium oxide and is deposited to a known thickness of 10 nm to 1 micrometer (μm), for example, 270 nm, which is useful for the analysis of reflected light.

[0039]

[0048] In various embodiments, the deposition process of the transparent thin film 307 (e.g., ALD) is carefully controlled to ensure that it is similar in physical state to the material of the liner 124, but is different, for example, smoother and flatter, to facilitate the reflection of light from its surface. In this way, the transparent thin film 307 reflects light to provide precise conditions for the chamber, and its thinness and smoothness increase the signal-to-noise ratio (SNR) of the distal surface, facilitating the ability to test thinner process film layers 309 within the processing chamber 303. The transparent thin film 307 also passivates and protects the material of the transparent crystal 120, allowing the expensive transparent crystal 120 to last longer in the corrosive processing environment of the processing chamber 303.

[0040]

[0049] In some embodiments, a process film layer 309 (e.g., a process thin film layer) is deposited during processing in a processing chamber 303. The process film layer 309 may include a film stack to be measured by a spectrometer 225. The optical coupling device 204 can collimate the light provided by the light source 201 and direct the collimated light 304A to pass through the proximal surface 120A of the transparent crystal 120, for example, the outer surface of the flange 305. This incident light is then reflected from the transparent crystal, for example, the distal surface 120B of the shaft 301, from the surface of the transparent thin film 307, and from the surface of the process film layer 309. These three reflected light sources return together, as shown as reflected light 304B, and enter the optical coupling device 204. The optical coupling device 204 can focus the reflected light into an optical fiber cable 232 so that it enters the spectrometer for measurement (see Figure 2).

[0041]

[0050] The reflected light signals at each interface (e.g., the three surfaces mentioned above) can all be optically combined to produce constructive and destructive interference. The exact nature of this interference depends on the relative thickness of each layer, e.g., the transparent crystal 120, the transparent thin film 307, and the process film layer 309 (or film stack). The final result measured by the spectrometer 225 (and after normalization relative to an initial reference) is a spectrum with interference fringes. These interference fringes can be fitted to a mathematical thin film model to determine one or more thin film optical parameters of the process film layer 309, such as thickness, n-value, and k-value. The n-value and k-value can be used to determine the compositional material. Therefore, knowing the exact initial thickness and optical properties of the transparent thin film 307 helps in fitting the spectrum to the thin film model.

[0042]

[0051] Figure 4A is a simplified side view of a transparent crystal 420 to illustrate the angles that may be formed on the proximal surface 420A (or first surface) and distal surface 420B (or second surface) relative to the liner 122 or wall 222 of the processing chamber 303 in various embodiments. Note that the lines and angles in Figure 4A are exaggerated for illustrative purposes and are not drawn to scale.

[0043]

[0052] As described above, the distal surface 120B of the transparent crystal 120 may be nearly flush with the wall 222 of the processing chamber 303. Back reflection from the proximal surface 120A may not contribute to the sensor signal and reduce the effective dynamic range of detection by the spectrometer 225. Therefore, the transparent crystal 120 may be designed with a first angle (θ1) that is slightly tilted with respect to the incident collimated light 404A. The first angle (θ1) can be, for example, between 2 and 5 degrees. In one embodiment, the first angle (θ1) is 3 degrees.

[0044]

[0053] Since the light that passes through is refracted (e.g., refracted light 404B), the optimal angle of the proximal surface 420B for maximum reflection may be perpendicular to this refracted light ray. In one embodiment, this optimal or second angle (θ2) may be between 0.8 and 1.8 degrees. In one embodiment, the second angle (θ2) is 1.3 degrees. Note that θ1 is θ 12 +θ 13 It is equal to . Furthermore, Snell's Law is as follows, as shown in Equations 1 and 2: Equation 3 in TIFF0007838027000001.tif24170 represents the maximum reflection from the distal surface 420B. TIFF0007838027000002.tif9170

[0045]

[0054] Therefore, for example, if the transparent crystal is made of sapphire, we can obtain the following approximate optimal angle. TIFF0007838027000003.tif14170 Here, assuming θ1=3° and n2=1.8 (sapphire), The filename becomes TIFF0007838027000004.tif9170.

[0046]

[0055] If a different first angle (θ1) is selected, the second angle (θ2) may be different, as determined by Equation 4. In an alternative embodiment, an optical component, for example, at least the optical coupling device 204, may be tilted by the first angle (θ1) to optimize the incident light with respect to the proximal surface 420A. Thus, the proximal surface 420A may remain at no angle with respect to the wall of the processing chamber, and the distal surface 420B may be slightly angled to maximize reflection from the distal surface 420B. Alternatively, the optical coupling device 204 may be tilted by the second angle (θ2), and therefore at the optimal angle with respect to the distal surface 420B. In this embodiment, the distal surface 420A has no angle with respect to the wall, and then the proximal surface 420A may be tilted by a slight angle to reduce back reflection of the incident collimated light 404A.

[0047]

[0056] Figure 4B is a simplified side view of a transparent crystal without surface angles according to one embodiment. Therefore, the proximal and distal surfaces 420A are flat, and no angles are designed on their respective surfaces. While this type of plug for transparent crystals is easier to manufacture, it may suffer from reduced dynamic range and sensitivity due to back reflection from the proximal surface 420A.

[0048]

[0057] Figure 4C is a detailed side view of a transparent crystal having appropriate dimensions including some angles of Figure 4A, according to one embodiment. In Figure 4C, the transparent crystal 420 includes a proximal surface 420A having a first angle (θ1) of about 3 degrees. The transparent crystal 420 may further include a distal surface having a second angle of about 1.3 degrees. It is expected that there will be variation in the optimal range of the first and second angles, and once the first angle is selected, it can be calculated according to Equation 4. The transparent crystals 420 in Figures 4A and 4B are more complex to design and manufacture, but have a better dynamic range and sensitivity for film deposition on the distal surface 420B.

[0049]

[0058] Figure 5 shows graphs of reflectance versus wavelength for several different process film layers compared to computer models, representing various embodiments. Note that the different process film layers have different thicknesses, and consequently, their reflectance signals also differ. Each experiment (solid curve) includes a corresponding simulation model (dashed curve). This graph demonstrates that the thickness of the process film layer can be determined by analyzing the reflectance signal (or reflectance measurement signal).

[0050]

[0059] Figure 6A is a flowchart of Method 600A for measuring the first spectrum of a process film layer on a transparent thin film, according to one embodiment. Method 600A can be carried out using the components described with reference to Figures 1 to 4A, as will become clear. Although shown in a specific order and sequence, the order of the processes can be changed unless otherwise specified. Therefore, the illustrated embodiments should be understood as examples only, the illustrated processes can be carried out in a different order, and some processes can be carried out in parallel. Furthermore, one or more processes can be omitted in various embodiments. Therefore, not all processes are necessary in every embodiment. Other process flows are also possible.

[0051]

[0060] In step 610, method 600A may include providing at least a portion of the transparent crystal 120 embedded in the walls and liner of the processing chamber. The transparent crystal 120 has a proximal end and a distal end, the distal end having a distal surface exposed to the interior of the processing chamber. The portion of the transparent crystal 120 embedded in the walls and liner may be a shaft 301, as shown in Figure 3. The transparent crystal 120 may be sapphire, diamond, or one of other sufficiently hard and sufficiently transparent crystals.

[0052]

[0061] In step 615, method 600A may further include depositing a transparent thin film having chemical properties substantially consistent with the chemical properties of the liner on the distal surface of the transparent crystal 120 using atomic layer deposition (ALD). The transparent thin film may be yttrium oxide, aluminum oxide, or zirconium oxide, or a similar alloy, and may have a known thickness. The deposition carried out in step 615 may be performed before embedding the transparent crystal 120 in the walls of the processing chamber and within the liner.

[0053]

[0062] Next, in step 620, method 600A deposits a process film layer on a transparent thin film in the processing chamber. This process film layer may be a thin film layer deposited chemically or using plasma, and may include a film stack having a bottom layer of accumulation before the processing chamber is cleaned.

[0054]

[0063] Next, in step 625, method 600A transmits light from a light source through the proximal end of a transparent crystal using an optical coupling device. The light source 201 may be a flash lamp, which is described in detail with reference to Figure 2. The optical coupling device 204 may be a collimator, a mirror, or a set of mirrors, which is described in detail with reference to Figures 2-3.

[0055]

[0064] Next, in step 630, method 600A focuses the light reflected and received back from the combination of the distal surface, the surface of the transparent thin film, and the surface of the process film layer into the optical fiber cable using an optical coupling device. These three different reflected lights can be added together, reinforced and canceling each other out, depending on the thickness of these three different layers, as illustrated with reference to Figure 3.

[0056]

[0065] Next, in step 635, method 600A can receive focused light from the optical fiber cable using a spectrometer, as described in detail with reference to Figure 2. Subsequently, in step 640, method 600A can detect a first spectrum representing the process film layer within the focused light using a spectrometer.

[0057]

[0066] Figure 6B is a flowchart of Method 600B, according to one embodiment, for measuring a second spectrum (without light on) of a deposited thin film to determine one or more optical film properties of a process film layer, along with a first spectrum. Method 600B can be carried out using the components described with reference to Figures 1 to 4A, as will become clear. Although shown in a specific order and sequence, the order of the processes can be changed unless otherwise specified. Therefore, the illustrated embodiments should be understood as examples only, the illustrated processes can be carried out in a different order, and some processes can be carried out in parallel. Furthermore, one or more processes can be omitted in various embodiments. Therefore, not all processes are required in every embodiment. Other process flows are also possible.

[0058]

[0067] In step 650, method 600B includes detecting a second spectrum from the focused light using a spectrometer when the light source is off. This second spectrum may be the OES of the processing chamber at the time of measurement of the first spectrum.

[0059]

[0068] Next, in step 655, method 600B can receive the first and second spectra by a processing device. The processing device may be the processing device 130 or controller 109 shown in Figures 1 and 2.

[0060]

[0069] Next, in step 660, method 600B can generate reflectance measurement data by subtracting the second spectrum from the first spectrum using a processing device. This reflectance measurement data can also be generated without this step if there is no plasma in the processing chamber and therefore the measurement of the first spectrum is before or after processing with plasma. Next, in step 665, method 600B can generate a reflectance measurement signal by dividing the spectroscopic measurement data by a reference spectrum using a processing device. The reference spectrum can be obtained under known conditions, such as during the initial setup of the system. By dividing, the spectroscopic measurement data can be normalized into a spectroscopic measurement signal suitable for analysis of the deposited process film layer.

[0061]

[0070] Next, in step 670, method 600B can use a processing device to fit the reflectance measurement signal to a thin-film optical model to determine information including one or more optical film properties of the process film layer. The one or more optical film properties may be the film thickness, the values ​​of n and k, and / or the compositional material of the process film layer.

[0062]

[0071] Figure 7 is a flowchart of Method 700, according to various embodiments of this disclosure, which uses one or more optical film properties of process film layers on a transparent thin film to improve processing in a processing chamber. Method 700 can be executed by processing logic that may include hardware (circuits, dedicated logic, etc.), software (e.g., executed on a general-purpose computer system or dedicated machine), firmware, or any combination thereof. For example, Method 700 may be executed by a controller 109 (e.g., processing device 130) as referenced herein. In embodiments, various baselines or thresholds (e.g., variations in thickness, or variations in n and k) may be stored in the memory 134 of the controller 109 and indexed against a particular composition. These values ​​can be used as comparisons by the various Method 700 described herein. Although shown in a particular order and sequence, the order of processes can be changed unless otherwise specified. Thus, the illustrated embodiments should be understood only as examples, the illustrated processes can be executed in a different order, and some processes can be executed in parallel. Furthermore, in various embodiments, one or more processes can be omitted. Thus, not all processes are required in every embodiment. Other process flows are also possible.

[0063]

[0072] Referring to Figure 7, Method 700 can begin by having the processing logic process the reflectance measurement signal so that the reflectance measurement signal fits to a thin-film optical model, thereby determining one or more optical film properties (e.g., thickness, n and k values, and / or material composition) of the process film layer 309 deposited on the transparent thin film 307 (710). If the measurement is taken while the substrate is being processed in the processing chamber, Method 700 can then have the processing logic determine whether the thickness matches a baseline measurement of the process film layer, for example, taking into account the composition of the process film layer 309 (715). If yes, and they match, Method 700 can continue processing the substrate in the processing chamber (705). If they do not match, Method 700 can then have the processing logic determine, based on the thickness comparison, that the variation in the deposition rate of the process film layer 309 exceeds a threshold variation (720).

[0064]

[0073] In various embodiments, the threshold fluctuation may be sufficiently suitable for changes in the deposition process. Such a threshold fluctuation may be application-specific or may be empirically determined based on the amount of fluctuation required to induce a process shift. The process under monitoring may also be etching, deposition, etc. Subsequently, in Method 700, the processing logic can trigger a process in the processing chamber to correct the deposition rate of the process film layer (725). This part of Method 700 can thus use differential measurements compared to baseline measurements over time to determine whether the process in the processing chamber has shifted (or drifted) over time.

[0065]

[0074] Next, similarly, in Method 700, the processing logic can determine whether the material composition of the process film layer 309 matches the baseline composition expected to be deposited on the transparent thin film (730). If yes, and they match, Method 700 can continue processing the substrate in the processing chamber (705). If they do not match, then in Method 700, the processing logic can send a feedback signal to the controller 109 (or another computing device having an interface to the processing system operator) to report an error due to a process shift detected in the processing chamber (735). A process shift can be detected by the fact that the detected composition has deviated from the expected composition. This part of Method 700 may, in one embodiment, be performed while the processing system is inactive.

[0066]

[0075] In some embodiments, Method 700 subsequently allows the processing device to determine, during or after processing the substrate in the processing chamber, whether the process film layer on the transparent thin film has reached an accumulation limit (e.g., a limit on the accumulated thickness required to be within specifications) (740). If it has not, Method 700 can continue processing the substrate in the processing chamber (705). If yes, Method 700 subsequently allows the processing logic to trigger the processing chamber to start a cleaning process within the processing chamber (745). This cleaning process may be intended to clean the surface of the processing apparatus and the accumulated film in order to improve future processing results and / or to return the processing apparatus to a certain specification. The cleaning process may also require a plasma process and therefore may have an OES to be turned on and subtracted from the determined spectrum in order to determine the reflectance measurement signal.

[0067]

[0076] In various embodiments, Method 700 may subsequently determine during such a cleaning process triggered by step 745 whether the process film layer has been removed to a predetermined threshold thickness (750). Such a determination may be to confirm whether the process film layer has been sufficiently reduced by the cleaning process. Once the process film layer has been removed to or beyond a predetermined threshold thickness, Method 700 may subsequently trigger the processing chamber so that the processing logic terminates the cleaning process being performed within the processing chamber (755). Once completed, Method 700 may continue processing the substrate within the processing chamber (705).

[0068]

[0077] Additional or similar methods to method 700 in Figure 7 are conceivable. For example, during processing of a substrate in a processing chamber, the processing logic may detect the moment when the process film layer reaches a threshold thickness level on the transparent thin film 307. The processing logic may further trigger the termination of the deposition process that is depositing the deposited film layer in the processing chamber. The processing logic can make other similar decisions and update the process or process state of the processing chamber to improve substrate throughput, quality, and / or reduce process shifts.

[0069]

[0078] In a further embodiment, the processing chamber may, in some cases, perform a cleaning process each time a substrate (or group of substrates) is processed, or at other intervals. The processing logic can precisely determine the moment when the end of this cleaning is reached on the distal surface 120B or 420B of the transparent thin film 307. The processing logic can then trigger the processing chamber to stop cleaning and proceed to the next step, thereby improving throughput. If the distal surface 120B or 420B is not cleaned at the same rate as the rest of the chamber, this difference can be pre-characterized and compensated for by a lookup table in the controller 109.

[0070]

[0079] The foregoing description provides numerous specific details, such as examples of particular systems, components, and methods, in order to provide a good understanding of some embodiments of the present disclosure. However, it will be apparent to those skilled in the art that at least some embodiments of the present disclosure can be implemented without these specific details. In other examples, well-known components or methods are not described in detail or are presented in the form of simple block diagrams, in order to avoid unnecessarily obscuring the present disclosure. Thus, the specific details described are merely illustrative. Certain embodiments may differ from these exemplary details, but may still be intended to be within the scope of the present disclosure.

[0071]

[0080] Throughout this specification, any reference to “one embodiment” or “embodiment” means that a particular feature, structure, or characteristic described in relation to that embodiment is included in at least one embodiment. Therefore, occurrences of the phrase “in one embodiment” or “in one embodiment” in various places throughout this specification do not necessarily all refer to the same embodiment. Furthermore, the term “or” is intended to mean inclusive, not exclusive. Where the terms “about” or “approximately” are used herein, this is intended to mean that the presented nominal values ​​are accurate within ±10%.

[0072]

[0081] Although the steps of the methods described herein are shown and described in a specific order, the order of the steps of each method may be changed so that certain steps are performed in reverse order, and certain steps are performed at least partially concurrently with other steps. In another embodiment, the instructions for individual steps or substeps may be intermittent and / or alternating.

[0073]

[0082] It is understood that the above description is illustrative and not limiting. Many other embodiments will become apparent to those skilled in the art upon reading and understanding the above description. Therefore, the scope of this disclosure should be determined by reference to the appended claims, together with the entire scope of the equivalents to which such claims are entitled. Furthermore, this application includes the following embodiments. (Aspect 1) A transparent crystal, wherein at least a portion of the transparent crystal is embedded in the wall and liner of the processing chamber, and the transparent crystal has a proximal end and a distal end, the distal end having a distal surface exposed to the inside of the processing chamber, A transparent thin film deposited on the distal surface of the transparent crystal, having chemical properties substantially consistent with the chemical properties of the liner, Spectrometer, and A photocoupler coupled to the spectrometer, Transmitting light from a light source through the proximal end of the transparent crystal, The light reflected from the combination of the distal surface, the surface of the transparent thin film, and the surface of the process film layer deposited on the transparent thin film, and then received back, is focused into the spectrometer. A photocoupler capable of performing this operation. Equipped with, The spectrometer can detect a first spectrum in the focused light representing the process film layer. system. (Aspect 2) The system according to embodiment 1, wherein the transparent thin film comprises one of yttrium oxide, aluminum oxide, and zirconium oxide, and has a known thickness. (Aspect 3) The system according to embodiment 1, wherein the transparent crystal is one of a sapphire plug, a diamond plug, a quartz plug, and a silicon carbide plug. (Aspect 4) The system according to embodiment 1, wherein the distal surface of the transparent crystal is formed at a certain angle with respect to the liner, and the angle is between 0.8 degrees and 1.8 degrees. (Aspect 5) The spectrometer further comprises a processing device coupled to it, and the processing device is Receiving the first spectrum from the spectrometer, When the light source is off, a second spectrum is received from the spectrometer, The reflectance measurement data is calculated by subtracting the second spectrum from the first spectrum, The reflectance measurement signal is calculated by dividing the reflectance measurement data by the reference spectrum, The reflection measurement signal is fitted to a thin-film optical model to determine information including one or more optical film properties of the process film layer. The system according to embodiment 1, which can perform the following. (Aspect 6) The one or more optical film properties include thickness, and while the substrate is being processed in the processing chamber, the processing device further... The aforementioned thickness is compared with the baseline measurement value of the process film layer, Using the above comparison, it is determined that the variation in the deposition rate of the process film layer exceeds a threshold variation, To correct the deposition rate of the process film layer, trigger the process in the processing chamber, The system according to embodiment 5, which can perform the following. (Aspect 7) The one or more optical film properties include thickness, and after processing the substrate in the processing chamber, the processing device further... The moment when the process film layer on the transparent thin film is removed to a predetermined threshold thickness or less is detected, In response to the aforementioned detection, the processing device is triggered to terminate the cleaning process within the processing chamber. The system according to embodiment 5, which can perform the following. (Pattern 8) The one or more optical film properties include thickness, and while the substrate is being processed in the processing chamber, the processing device further... The moment when the process film layer reaches a threshold thickness level on the transparent thin film is detected, The trigger is the termination of the deposition process in which the aforementioned process film layer is deposited, The system according to embodiment 5, which can perform the following. (Aspect 9) A processing chamber, A wall for defining the inside of the processing chamber, A liner attached to the inner surface of the aforementioned wall, A transparent crystal wherein at least a portion of the transparent crystal is embedded in the wall and the liner, and the transparent crystal has a proximal end and a distal end, the distal end having a distal surface that is substantially flush with the inner surface of the wall, and A transparent thin film deposited on the distal surface of the transparent crystal, having chemical properties substantially consistent with the chemical properties of the liner, Equipped with, Light from outside the wall can pass through the transparent crystal, be reflected at the distal surface and the surface of the transparent thin film, and return through the proximal end of the transparent crystal. Processing chamber. (Aspect 10) The processing chamber according to embodiment 9, wherein the transparent thin film comprises one of yttrium oxide, aluminum oxide, and zirconium oxide, and has a known thickness. (Aspect 11) The processing chamber according to embodiment 9, wherein the transparent crystal is one of a sapphire plug, a diamond plug, a quartz plug, and a silicon carbide plug. (Aspect 12) The processing chamber according to embodiment 9, wherein the distal surface of the transparent crystal is formed at a certain angle with respect to the liner, and the angle is between 0.8 degrees and 1.8 degrees. (Aspect 13) The transparent crystal is plug-shaped, and the transparent crystal is The wall and the shaft embedded in the liner, and A flange attached to the shaft and adjacent to the outer surface of the wall, The processing chamber according to embodiment 9, further comprising a seal disposed between the flange and the outer surface of the wall. (Aspect 14) The processing chamber according to embodiment 13, wherein the flange has an inner surface that is in physical contact with the seal, and the inner surface has a surface roughness (Ra) of less than 20 nanometers. (Aspect 15) The processing chamber according to embodiment 13, wherein the proximal surface at the proximal end of the transparent crystal is formed at a certain angle with respect to the outer surface of the wall, and the angle is between 2 and 5 degrees. (Aspect 16) To provide at least a portion of a transparent crystal embedded in the wall and liner of a processing chamber, wherein the transparent crystal has a proximal end and a distal end, and the distal end has a distal surface exposed to the interior of the processing chamber, A transparent thin film having chemical properties substantially consistent with the chemical properties of the liner is deposited on the distal surface of the transparent crystal. Depositing a process film layer on the transparent thin film in the processing chamber, Light from a light source is transmitted through the proximal end of the transparent crystal by an optical coupling device, The light reflected from the combination of the distal surface, the surface of the transparent thin film, and the surface of the process film layer is focused into the optical fiber cable by the optical coupling device. The focused light is received from the optical fiber cable by a spectrometer, A first spectrum representing the process film layer is detected by the spectrometer within the focused light, A method that includes this. (Aspect 17) When the light source is off, a second spectrum is detected from the focused light by the spectrometer, The processing device receives the first spectrum and the second spectrum, The processing device generates reflectance measurement data by subtracting the second spectrum from the first spectrum, The processing device divides the reflectance measurement data by a reference spectrum to generate a reflectance measurement signal, The processing device fits the reflection measurement signal to a thin-film optical model to determine information including one or more optical film properties of the process film layer. The method according to embodiment 16, further comprising: (Aspect 18) The one or more optical film properties include thickness, and the method is performed while processing the substrate in the processing chamber. The aforementioned thickness is compared with the baseline measurement value of the process film layer, Using the above comparison, it is determined that the variation in the deposition rate of the process film layer exceeds a threshold variation, To correct the deposition rate of the process film layer, trigger the process in the processing chamber, The method according to embodiment 17, further comprising: (Aspect 19) The one or more optical film properties include thickness, and the method is To detect that the thickness of the process film layer on the transparent thin film has reached its accumulation limit, In response to the detection, the processing chamber is triggered to start the cleaning process within the processing chamber. The method according to embodiment 17, further comprising: (Aspect 20) The one or more optical film properties include thickness, and the method is performed after processing the substrate in the processing chamber. The moment when the process film layer on the transparent thin film is removed to a predetermined threshold thickness or less by the cleaning process is detected, In response to the detection, the processing device is triggered to terminate the cleaning process in the processing chamber. The method according to embodiment 17, further comprising: (Aspect 21) The one or more optical film properties include thickness, and the method is performed while processing the substrate in the processing chamber. The moment when the process film layer reaches a threshold thickness level on the transparent thin film is detected, The trigger is the termination of the deposition process in which the aforementioned process film layer is deposited, The method according to embodiment 17, further comprising:

Claims

1. A processing chamber, A wall for defining the inside of the processing chamber, A liner attached to the inner surface of the aforementioned wall, A transparent crystal in the shape of a plug, A shaft embedded in the wall and the liner, the shaft including the distal surface of the transparent crystal exposed inside the processing chamber, and A flange adjacent to the outer surface of the wall, the flange including the proximal end of the transparent crystal, A transparent crystal having, A processing chamber comprising a transparent thin film deposited on the distal surface, wherein light can pass through the transparent crystal, be reflected at the distal surface and the surface of the transparent thin film, and return through the proximal end of the transparent crystal.

2. The processing chamber according to claim 1, wherein the transparent thin film comprises one of yttrium oxide, aluminum oxide, and zirconium oxide, and has a known thickness.

3. The processing chamber according to claim 1, wherein the distal surface of the transparent crystal is formed at a certain angle with respect to the liner, and the angle is between 0.8 degrees and 1.8 degrees.

4. The processing chamber according to claim 1, wherein the transparent crystal is one of a sapphire plug, a diamond plug, and a silicon carbide plug, and the processing chamber further comprises a seal disposed between the flange and the outer surface of the wall.

5. The processing chamber according to claim 4, wherein the flange has an inner surface that is in physical contact with the seal, and the inner surface has a surface roughness (Ra) of less than 20 nanometers.

6. The processing chamber according to claim 1, wherein the proximal surface at the proximal end of the transparent crystal is formed at a certain angle with respect to the outer surface of the wall, and the angle is between 2 and 5 degrees.

7. The processing chamber according to claim 1, wherein the distal surface of the transparent crystal is substantially flush with the inner surface of the wall.

8. The processing chamber according to claim 1, wherein the transparent thin film has chemical properties substantially consistent with the chemical properties of the liner.

9. A processing chamber, A wall for defining the inside of the processing chamber, A liner attached to the inner surface of the aforementioned wall, A transparent crystal wherein at least a portion of the transparent crystal is embedded in the wall and the liner, and the transparent crystal has a proximal end and a distal end, the distal end having a distal surface that is substantially flush with the inner surface of the wall, and A transparent thin film deposited on the distal surface of the transparent crystal, having chemical properties substantially consistent with the chemical properties of the liner, Equipped with, Light from outside the wall can pass through the transparent crystal, be reflected at the distal surface and the surface of the transparent thin film, and return through the proximal end of the transparent crystal. A processing chamber in which the distal surface of the transparent crystal is formed at a certain angle with respect to the liner, and the angle is between 0.8 degrees and 1.8 degrees.

10. A processing chamber, A wall for defining the inside of the processing chamber, A liner attached to the inner surface of the aforementioned wall, A transparent crystal wherein at least a portion of the transparent crystal is embedded in the wall and the liner, and the transparent crystal has a proximal end and a distal end, the distal end having a distal surface that is substantially flush with the inner surface of the wall, and A transparent thin film deposited on the distal surface of the transparent crystal, having chemical properties substantially consistent with the chemical properties of the liner, Equipped with, Light from outside the wall can pass through the transparent crystal, be reflected at the distal surface and the surface of the transparent thin film, and return through the proximal end of the transparent crystal. The transparent crystal is plug-shaped, and the transparent crystal is The wall and the shaft embedded in the liner, and A flange attached to the shaft and adjacent to the outer surface of the wall, A processing chamber comprising, further comprising a seal disposed between the flange and the outer surface of the wall.

11. The processing chamber according to claim 9 or 10, wherein the transparent thin film comprises one of yttrium oxide, aluminum oxide, and zirconium oxide, and has a known thickness.

12. The processing chamber according to claim 9 or 10, wherein the transparent crystal is one of a sapphire plug, a diamond plug, a quartz plug, or a silicon carbide plug.

13. The processing chamber according to claim 10, wherein the flange has an inner surface that is in physical contact with the seal, and the inner surface has a surface roughness (Ra) of less than 20 nanometers.

14. The processing chamber according to claim 10, wherein the proximal surface at the proximal end of the transparent crystal is formed at a certain angle with respect to the outer surface of the wall, and the angle is between 2 and 5 degrees.

Images