Manufacturing method for functional thin-film semiconductors

Abstract

To provide a method of manufacturing a functional thin film semiconductor, capable of stably achieving an InSb crystallized thin film on a glass substrate or a flexible substrate.SOLUTION: A method of manufacturing a functional thin film semiconductor includes the steps of: after creating a high vacuum state inside a high frequency sputtering device, flowing argon (Ar) gas into the device and discharging RF plasma inside the device, thereby depositing an InSb film on a substrate to be filmed set inside the device; flowing nitride (N2) gas into the device and discharging RF plasma to a target comprising Si inside the device, thereby depositing a cap film made of SiN on the InSb film; and crystallizing the InSb film on the substrate to be filmed where an InSb film and a cap film are deposited. Thus, a good InSb crystallized film can be formed, so that an element with high carrier (electron) mobility can be manufactured.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a method for manufacturing an InSb crystallized thin film as a semiconductor device with higher performance and functionality for Indium Antimonide (InSb), which is a III-V semiconductor, on a glass substrate or a sheet-like flexible substrate made of a resin or a metal thin sheet with low heat resistance.

Background Art

[0002] InSb is a semiconductor material with very high mobility and is used in functional semiconductor devices such as magnetic sensors and infrared sensors. Therefore, it is also widely used as a Hall sensor and is expected to be a material element in innovative technologies applied to small Hall elements and electronic control in automobiles.

[0003] Generally, InSb devices with high carrier mobility are manufactured by an epitaxial method on a single crystal substrate by an expensive manufacturing method such as MBE. In addition, as a technique for manufacturing an element using a thin film, a method is known in which mica is used as a substrate, a crystallized thin film is formed thereon by a thermal evaporation method, and then the crystallized InSb thin film is transferred and mounted on a ferrite substrate for manufacturing.

[0004] However, mica is a natural resource and is gradually depleting in recent years, so an increase in price is a concern. Furthermore, there are variations in the thickness and surface shape of mica flakes, which cause variations in the state after crystallization, affect functional characteristics such as electron mobility, and are also a concern in terms of yield.

[0005] Therefore, it is required to form a uniform crystallized film with good reproducibility and quality on an inexpensive glass substrate or a sheet-like flexible substrate made of a resin or a metal thin sheet with low heat resistance. However, previous studies have shown that films deposited at room temperature by sputtering are typically in an amorphous phase and have lower electron mobility compared to those produced by thermal deposition. Therefore, heat treatment to crystallize them (or deposition while heating at low temperatures) is necessary. However, flexible substrates made of polymer materials are generally sensitive to heat, making high-temperature heating for crystallization treatment impossible. Consequently, it has been difficult to produce high-performance crystalline thin-film devices like those obtained by thermal deposition on mica.

[0006] Despite these challenges, in recent years, high-performance crystallized SiTFTs (thin-film transistors) have become possible to mount on glass substrates or flexible substrates such as polyimide (PI), a polymer with relatively good heat resistance, using laser annealing crystallization. Currently, smartphones and PCs using FPD (Flat Panel Display) information terminal panels such as liquid crystal (LCD) and organic light-emitting diode (OLED) are widespread throughout the world, not only on glass but also on PI (Plastic Indicator) surfaces. Furthermore, there is a growing demand for integrated panel systems, and research and development to improve performance is underway. If thin films with excellent magnetic properties can be freely formed and mounted on any substrate, the above-mentioned problems can be solved, and further enhancements in functionality and multi-functionality can be expected.

[0007] In pre-film deposition techniques for crystallization, sputtering offers superior mass production capabilities and productivity compared to vacuum deposition, as it allows for uniform film deposition over large areas. There is a research report (Non-Patent Literature 1) that describes using this sputtering method to deposit an InSb thin film on glass, followed by crystallization by low-temperature heating at around 525°C. On the other hand, in the deposition of Si films by sputtering, it is known that laser crystallization is effective for films obtained by sputtering with helium (He) gas or neon (Ne) gas instead of the usual argon (Ar) gas, and that films can be deposited at lower temperatures (Non-Patent Documents 2 and 3).

[0008] It has also been reported that even on flexible substrates such as low-cost polyethersulfone (PES), which require lower-temperature processes than glass, good crystallized Si films can be obtained by laser annealing (ELA: Excimer Laser Annealing or BLDA: Blue Laser Diode Annealing using semiconductor devices), enabling the fabrication of high-performance, high-mobility polySiTFTs (Non-Patent Literature 3). [Prior art documents] [Non-patent literature]

[0009] [Non-Patent Document 1] CJ Koswaththage et al. AIP Advance 6,115303(2016). [Non-Patent Document 2] DP Gosain et al., Proc.AM-LCD, TFT1-2,57,(1997). [Non-Patent Document 3] T. Noguchi, Y. Chen, T. Miyahira, J. de Dieu Mugiraneza, Y. Ogino, Y. Iida, E. Sahota, and M. Terao, Jap. J. Appl. Phys. 49, 03CA10(2010). [Overview of the project] [Problems that the invention aims to solve]

[0010] Conventionally, uniform crystallization from the amorphous phase in semiconductor thin films of III-V compounds such as InSb has been impossible (or difficult). In particular, during the heat treatment process in the annealing stage, antimony (Sb) precipitated from the InSb film, changing the composition of In and Sb, which resulted in a problem where high mobility could not be achieved. In response to this problem, the inventors, through diligent research, discovered that the hole mobility of an InSb film deposited by a high-frequency sputtering apparatus using argon (Ar) gas as the inflow gas increases due to crystallization by RTA (Rapid Thermal Annealing) (as in the case of Group IV Si and Ge thin films). Furthermore, it was revealed that the cap film on the InSb film prevents the release of antimony (Sb), maintains the In-Sb composition, and plays an important role in increasing the conduction carrier (electron) mobility, i.e., the Hall (Hall) mobility, which is derived by the Hall effect.

[0011] Therefore, the object of the present invention is to provide a method for producing an InSb crystallized thin film as a semiconductor device that has higher performance and higher functionality than Indium Antimonide (InSb), a III-V compound other than Group IV silicon (Si), even on a glass substrate or a sheet-like flexible substrate made of resin or metal flakes with low heat resistance. [Means for solving the problem]

[0012] The method for manufacturing a functional thin-film semiconductor according to the present invention is: After creating a high vacuum inside the high-frequency sputtering apparatus, The process involves introducing argon (Ar) gas into the apparatus and discharging RF plasma within the apparatus to form an InSb film on a flexible substrate set within the apparatus, The process involves introducing argon (Ar) gas into the apparatus and discharging RF plasma onto a target made of SiO2 within the apparatus, thereby forming a cap film of SiO2 on the InSb film of the flexible substrate. A step of crystallizing the InSb on the substrate for film formation, on which the InSb film and the cap film have been formed, It is characterized by consisting of the following.

[0013] The method for manufacturing a functional thin-film semiconductor according to the present invention is: In the step of forming an InSb film, The flowing-in argon (Ar) gas can be replaced with neon (Ne) gas or helium (He) gas. In the step of forming a cap film, Not only SiO2 but also SiN can be formed, and both can be formed.

[0014] The present invention is a method for manufacturing an InSb crystallized thin film on a glass substrate or a sheet-like flexible substrate made of a resin or a metal thin sheet having low heat resistance.

[0015] In the present invention, the sheet-like flexible substrate made of a resin or a metal thin sheet having low heat resistance means a polyimide (PI) having a heat resistance of only about 500 °C, a polycarbonate (PC), a polyethylene naphthalate (PEN), a polyethersulfone (PES), a polyethylene terephthalate (PET), and a cycloolefin polymer (COP) and other flexible resins having a lower heat resistance than polyimide (PI), and further a sheet-like substrate made of a metal thin sheet such as Al. Hereinafter, these are referred to as "flexible substrates". In the present invention, the glass substrate and the flexible substrate are collectively referred to as "substrate for film formation".

[0016] An InSb film is formed on the substrate for film formation. The formation of the InSb film can be performed not only by the radio frequency sputtering method (RF) but also by the DC sputtering method (DC).

[0017] The target for film formation is indium antimonide (InSb), which is a crystal compound composed of indium (In) and antimony (Sb), and it is desirable that the purity is 99.99% or more (in the InSb composition, the content of other impurity elements such as oxygen and carbon is less than 0.01%). III-V group compounds such as InAs (indium arsenide), GaAs (gallium arsenide), and GaP (indium phosphide) can also be used.

[0018] Sputtering gases can include argon (Ar), neon (Ne), helium (He), or mixtures thereof. In particular, with InSb films sputtered using helium (He) gas, the substrate temperature during InSb crystallization by laser annealing (LA) can be maintained below 300°C, compared to InSb films sputtered using neon (Ne) gas. Under these conditions, it is expected that InSb can be crystallized without deforming the substrate, enabling a process that can be effectively lowered to lower temperatures, and consequently increasing the freedom in selecting substrate materials.

[0019] InSb films can also be deposited by sputtering while the substrate is heated. This method has the advantage of promoting the crystallization of InSb immediately after film formation, similar to vacuum heating deposition. In this case, heating methods can include not only substrate heating using conventional resistance wire heating methods, but also RTA methods using halogen lamps or xenon lamps. InSb or other thin film samples can be crystallized by heating them directly or on a susceptor substrate such as graphite (or supported by quartz, etc.) using a resistive wire (generally a halogen lamp, xenon lamp, or LED). In addition to RTA (hereinafter referred to as "flash lamp annealing"), optical annealing using pulses or CW scanning (such as lasers) can also be effectively utilized as a heating method. The thickness of the deposited InSb film is preferably 200 to 1000 nm. The deposition temperature for InSb films should be 460°C or lower for glass and polyimide (PI) substrates, and 300°C or lower for flexible substrates made of other materials.

[0020] Before depositing the InSb film on the substrate, silicon dioxide (SiO₂) is added to the substrate. X )("SiO X "of" XA value of 1-2 is preferable. It is also possible to deposit insulating films using silicon nitride (Si3N4) or other components similar to mica. By depositing an insulating film on the substrate to be film-deposited, it is possible to prevent the release of antimony (Sb) from the InSb film due to temperature rise during the annealing process using an RTA (Real-Time Atmosphere) apparatus to crystallize the InSb film that will be deposited later. The insulating film can use Si, SiN, or SiO2 as the target. Nitrogen (N2) gas or argon (Ar) gas is introduced into the apparatus at a flow rate of 13 sccm and a deposition pressure of 1.4 mTorr, and the film is deposited by sputtering using an RF plasma discharged at 450 W. This allows for the deposition of an insulating film of SiN and / or SiO2 on the substrate to be film-deposited. The deposition temperature for insulating films should be 460°C or lower for glass and polyimide (PI) substrates, and 300°C or lower for flexible substrates made of other materials.

[0021] After depositing an InSb film on the substrate to be film-deposited, a cap film is deposited on the InSb film (or on the InSb film if an insulating film is to be deposited on the substrate). By forming a cap film on the InSb film, the release of antimony (Sb) during the heating process of InSb crystallization is prevented, and the In-Sb composition is maintained, thereby increasing the hole mobility of the InSb crystallized thin film.

[0022] The conditions for forming the cap film are as follows: The insulating material used for the cap film mainly consists of one or more of SiOxNy, SiN, or SiO2, or a mixture thereof (including the structures of InSb, SiOx, and SiN). The thickness of the cap film should preferably be 1.5 μm or less. For depositing the cap film, Si, SiN, and SiO2 can be used as targets. Nitrogen (N2) gas or argon (Ar) gas is introduced into the apparatus at a flow rate of 13 sccm and a deposition pressure of 1.4 mTorr, and the film is deposited by sputtering using an RF plasma discharge at 450 W. This allows for the deposition of a cap film made of SiN or SiO2 in an amorphous phase on an InSb film. The deposition temperature for the cap film should be 460°C or lower for glass and polyimide (PI) substrates, and 300°C or lower for flexible substrates made of other materials.

[0023] It is also possible to pre-anneal the InSb film at a temperature where crystallization does not begin, either before or after the formation of the cap film on the InSb film, i.e., before the InSb crystallizes. By performing pre-annealing of InSb at a temperature where crystallization of InSb does not begin before crystallization, the deposited amorphous InSb film is transformed into an amorphous network film structure of a group III-V material that is easily crystallized in the subsequent heating process. At the same time, some or most of the Ne and He remaining in the InSb film are released outside the InSb film. As a result of subsequent crystallization, the InSb film surface becomes smoother and larger crystal grains are formed, which is expected to result in high electron carrier (Hall) mobility. In other words, it is expected that the formation of a fine network for increasing the mobility within the crystal grains of InSb will be promoted more smoothly, enabling the realization of uniform and superior crystallization with fewer defects.

[0024] The conditions for preliminary annealing are as follows: Any of the following types of equipment can be used: electric furnace annealing equipment (hereinafter referred to as "FA equipment"), high-temperature rapid annealing equipment (hereinafter referred to as "RTA equipment"), flash lamp annealing equipment (hereinafter referred to as "FLA equipment"), or laser annealing equipment (hereinafter referred to as "LA equipment"). In the preliminary annealing process, the temperature at which InSb crystallization does not begin is approximately 460°C or below for glass and polyimide (PI) substrates, and 300°C or below for flexible substrates made of other materials. Lasers are used at wavelengths shorter than 570 nm, such as semiconductor lasers (Green, Blue, etc.), solid-state lasers (e.g., harmonics), and excimer lasers. Using a semiconductor laser diode blue laser (BLDA) or a semiconductor UV laser instead of an excimer laser (ELA) offers advantages such as reduced equipment system costs and maintenance costs, miniaturization, stability, and improved flatness through CW scanning. The mode is either continuous wave (CW) or pulsed wave.

[0025] After depositing an InSb film and a cap film onto the substrate for film deposition, an annealing process is performed to crystallize the InSb. The conditions for annealing are as follows: Any of the following types of equipment can be used: FA equipment, RTA equipment, FLA equipment, or LA equipment. The maximum temperature that the InSb film can reach during the crystallization annealing process should be approximately 600°C or lower. Lasers are used at wavelengths shorter than 570 nm, including semiconductor lasers such as green and blue lasers, solid-state lasers (such as YAG lasers, usually second or third harmonics), and excimer lasers. Using a blue laser (BLDA) or a shorter-wavelength semiconductor UV laser instead of an excimer laser (ELA) offers several advantages: reduced equipment system costs, miniaturization, improved stability, and enhanced flatness through continuous wave scanning. Besides lasers, other sources with millisecond (millisecond) RTA (Real-Time Attack) such as flash lamps (e.g., halogen lamps or xenon lamps) can be used. The laser scanning mode uses either continuous wave (CW) or pulsed wave oscillation.

[0026] The crystallization annealing process can also be performed continuously by heating, such as with RTA or laser, if a preliminary annealing process is carried out after the cap film has been deposited. In particular, when using polymer sheets or metal sheets for flexible substrates, the entire process from film deposition of the InSb film and cap film to crystallization annealing can be carried out in a continuous, integrated process (roll-to-roll) without breaking the vacuum. [Effects of the Invention]

[0027] This invention enables the production of InSb crystallized thin films as semiconductor devices with higher performance and functionality compared to Indium Antimonide (InSb) other than silicon (Si), even on glass substrates or flexible substrates, at a lower cost. Furthermore, it can be applied to III-V crystalline thin films other than InSb, and by applying it to, for example, GaAs thin films and InP thin films, it becomes possible to realize ultra-high mobility TFTs on panels, which have not yet been achieved. [Brief explanation of the drawing]

[0028] [Figure 1] Graphs showing the difference in Hall mobility over RTA time intervals (left: when using argon (Ar) gas, right: when using neon (Ne) gas) [Figure 2] Graphs showing the difference in crystal peaks at different RTA times for InSb crystallized thin films using argon (Ar) gas (left: when SiN is used for the cap film, right: when SiO2 is used for the cap film). [Figure 3] Graphs showing the difference in crystal peaks at different RTA times for InSb crystallized thin films using neon (Ne) gas (left: when SiN is used for the cap film, right: when SiO2 is used for the cap film). [Modes for carrying out the invention]

[0029] After cleaning the glass substrate (hereinafter referred to as "glass substrate") with ethanol and ultrapure water, an InSb film was deposited on the glass substrate in a high-frequency sputtering apparatus (ULVAC SH-350E) according to the following procedure.

[0030] A cryopump (ULVAC CRYOGENICS R10) is used to draw suction from the vacuum chamber, creating a high vacuum (5 × 10) inside the high-frequency sputtering apparatus. -6 Set it to Torr or lower. Subsequently, argon (Ar) gas is introduced into the high-frequency sputtering apparatus at a flow rate of 13 sccm and a deposition pressure of 7 mTorr. In a high-frequency sputtering apparatus, RF plasma is discharged at 450W to sputter a 450nm thick layer of InSb (99.99%) onto a glass substrate.

[0031] In the examples where neon (Ne) gas was used as the gas flowing into the high-frequency sputtering apparatus (Figures 1 and 3), the gas was introduced under conditions of a flow rate of 13 sccm and a film deposition pressure of 7 mTorr. Furthermore, when using helium (He) gas as the gas flowing into the high-frequency sputtering apparatus, the sputtering rate is lower, requiring a longer time than when using neon (Ne) gas.

[0032] To prevent the release of antimony (Sb) from the InSb film during annealing for crystallization using an RTA device, a cap film (approximately 50 nm thick) of SiN and SiO2 was deposited immediately after the InSb film was formed. By forming a cap film on the InSb film, the release of antimony (Sb) during RTA heating is prevented, and the In-Sb composition is maintained, thereby increasing the hole mobility of the InSb crystallized thin film through crystallization by RTA.

[0033] In the example where SiN was deposited as the cap film, Si was used as the target, nitrogen (N2) gas was introduced at a flow rate of 13 sccm and a deposition pressure of 1.4 mTorr, and the film was deposited by reactive sputtering using an RF plasma discharge at 450 W. In the example where SiO2 was used as the cap film, SiO2 was used as the target, argon (Ar) gas was introduced at a flow rate of 13 sccm and a deposition pressure of 1.4 mTorr, and the film was deposited by sputtering using an RF plasma discharge at 450 W. Furthermore, when depositing SiN as a cap film, it is also possible to deposit the film by sputtering using SiN as the target, introducing argon (Ar) gas at a flow rate of 13 sccm and a deposition pressure of 1.4 mTorr, and discharging RF plasma at 450 W.

[0034] Note that neon (Ne) gas can be used instead of argon (Ar) gas, but the film deposition conditions for the cap film in this case are the same as those for the argon (Ar) gas example, except for the plasma discharge time (deposition time). The plasma discharge time (deposition time) for depositing a 450 nm thick InSb film was 375 seconds (6 minutes 15 seconds) with argon (Ar) gas and 623 seconds (10 minutes 23 seconds) with neon (Ne) gas.

[0035] After forming the cap film, the glass substrate on which the InSb film and the cap film were formed was removed from the chamber, and the glass substrate was heated to 500°C using an RTA apparatus (IR-1000GVB, manufactured by Thermo Riko Co., Ltd.) to crystallize it, thereby obtaining a crystallized InSb thin film. However, the time for which the glass substrate is heated to 500°C is limited to 0 to 90 seconds. In the following, when the heating time of the RTA device is given as a condition, it means the time during which the glass substrate is maintained in a state where it has been heated to 500°C.

[0036] In this example, an InSb crystallized thin film was obtained without forming an insulating film. However, before forming the InSb film on the glass substrate, an insulating film of SiN or SiO2 can also be formed on the glass substrate as follows. When depositing SiN as an insulating film, the film can be deposited by reactive sputtering using a Si target, introducing nitrogen (N2) gas at a flow rate of 13 sccm and a deposition pressure of 1.4 mTorr, and discharging RF plasma at 450 W. When depositing SiN as an insulating film, SiN is used as the target, argon (Ar) gas is introduced at a flow rate of 13 sccm and a deposition pressure of 1.4 mTorr, and the film can be deposited by sputtering using an RF plasma discharged at 450 W. When depositing SiO2 as an insulating film, the film can be deposited by sputtering using SiO2 as the target, introducing argon (Ar) gas at a flow rate of 13 sccm and a deposition pressure of 1.4 mTorr, and discharging RF plasma at 450 W.

[0037] Furthermore, multiple insulating films made of SiN, SiO2, or aluminum nitride (AlNx) can be deposited on a glass substrate. In this case, SiN, SiO2, or aluminum nitride (AlNx) can be used as the target, and argon (Ar) gas, neon (Ne) gas, helium (He) gas, or a mixture thereof can be introduced at a flow rate of 13 sccm and a deposition pressure of 1.4 mTorr. The film can then be deposited by sputtering while discharging an RF plasma at 450 W.

[0038] Following rapid heat treatment using an RTA device, XRD measurements were performed using X-ray diffraction to evaluate crystallinity, and Hall mobility measurements were performed using the van der Pauw method to evaluate electron mobility. Figure 1 is a graph showing the measurement results of Hall mobility after rapid heat treatment using an RTA device.

[0039] From the Hall mobility measurement results in Figure 1, the InSb crystallized thin film deposited with argon (Ar) gas showed improved mobility in the example where SiN was deposited as the cap film compared to the example where SiO2 was deposited (Figure 2). Furthermore, the evaluation of crystallinity after rapid heat treatment under annealing conditions for crystallization at 500°C (0-60 seconds) using an RTA apparatus (measurement results of Hall mobility by van der Pauw method) was 1180 cm². 2 It was / Vs.

[0040] In contrast, the InSb crystallized thin films deposited with neon (Ne) gas showed no significant difference between the SiN and SiO2 films used as cap films (Figure 3). In both cases, the evaluation of crystallinity after rapid heat treatment under annealing conditions of 500°C (0-30 seconds) using an RTA apparatus (measurement of Hall mobility by van der Pauw method) showed a higher crystallinity of approximately 2000 cm².2 It was / Vs (especially when the RTA time was 30 seconds, the Hall movement rate increased).

[0041] Therefore, the InSb crystallized thin film deposited with neon (Ne) gas showed higher mobility, better crystallinity, and stronger (111) crystal plane preference orientation than the InSb crystallized thin film deposited with argon (Ar) gas. In particular, the XRD peaks are sharper in the example where sputter deposition was performed using neon (Ne) gas (Figure 3) compared to the example where sputter deposition was performed using argon (Ar) gas (Figure 2). From this, it can be inferred that the InSb crystallized thin film deposited with neon (Ne) gas yielded a larger particle size, which is considered to be the factor that enabled the achievement of higher Hall mobility. In this embodiment, rapid heat treatment using an RTA apparatus was employed, but other methods such as FA apparatus and FLA apparatus can also be used, and pre-annealing before crystallization is also effective. Pre-annealing removes Ne and He contained after sputter deposition from the InSb thin film, enabling smooth crystallization of InSb crystallized thin films obtained by methods such as LA and RTA.

Claims

1. After creating a high vacuum inside the high-frequency sputtering apparatus, The process involves introducing argon (Ar) gas into the apparatus and discharging RF plasma within the apparatus to form an InSb film on a substrate set within the apparatus. Inside the aforementioned apparatus, nitrogen (N 2 The process involves introducing a gas and discharging an RF plasma onto a Si target within the apparatus to form a SiN cap film on the InSb film of the flexible substrate, A step of crystallizing InSb on the substrate for film formation, on which the InSb film and cap film have been formed, A method for manufacturing a functional thin-film semiconductor, characterized by comprising the above.

2. After creating a high vacuum inside the high-frequency sputtering apparatus, The process involves introducing argon (Ar) gas into the apparatus and discharging RF plasma within the apparatus to form an InSb film on a flexible substrate set within the apparatus. The process involves introducing argon (Ar) gas into the apparatus and discharging RF plasma onto a SiN target within the apparatus to form a SiN cap film on the InSb film of the flexible substrate. A step of crystallizing InSb on the substrate for film formation, on which the InSb film and cap film have been formed, A method for manufacturing a functional thin-film semiconductor, characterized by comprising the above.

3. After creating a high vacuum inside the high-frequency sputtering apparatus, The process involves introducing argon (Ar) gas into the apparatus and discharging RF plasma within the apparatus to form an InSb film on a flexible substrate set within the apparatus. Argon (Ar) gas is introduced into the apparatus, SiO 2 By discharging RF plasma onto a target consisting of the above in the apparatus, SiO is deposited onto the InSb film of the flexible substrate. 2 A process of forming a cap film by, A step of crystallizing InSb on the substrate for film formation, on which the InSb film and cap film have been formed, A method for manufacturing a functional thin-film semiconductor, characterized by comprising the above.

4. After creating a high vacuum inside the high-frequency sputtering apparatus, The process involves introducing neon (Ne) gas into the apparatus and discharging RF plasma within the apparatus to form an InSb film on a flexible substrate set within the apparatus, Inside the aforementioned apparatus, nitrogen (N 2 The process involves introducing a gas and discharging an RF plasma onto a Si target within the apparatus to form a SiN cap film on the InSb film of the flexible substrate, A step of crystallizing InSb on the substrate for film formation, on which the InSb film and cap film have been formed, A method for manufacturing a functional thin-film semiconductor, characterized by comprising the above.

5. After creating a high vacuum inside the high-frequency sputtering apparatus, The process involves introducing neon (Ne) gas into the apparatus and discharging RF plasma within the apparatus to form an InSb film on a flexible substrate set within the apparatus, The process involves introducing argon (Ar) gas into the apparatus and discharging RF plasma onto a SiN target within the apparatus to form a SiN cap film on the InSb film of the flexible substrate. A step of crystallizing InSb on the substrate for film formation, on which the InSb film and cap film have been formed, A method for manufacturing a functional thin-film semiconductor, characterized by comprising the above.

6. After creating a high vacuum inside the high-frequency sputtering apparatus, The process involves introducing neon (Ne) gas into the apparatus and discharging RF plasma within the apparatus to form an InSb film on a flexible substrate set within the apparatus, Argon (Ar) gas is introduced into the apparatus, SiO 2 By discharging RF plasma onto a target consisting of the above in the apparatus, SiO is deposited onto the InSb film of the flexible substrate. 2 A process of forming a cap film by, A step of crystallizing InSb on the substrate for film formation, on which the InSb film and cap film have been formed, A method for manufacturing a functional thin-film semiconductor, characterized by comprising the above.

7. After creating a high vacuum inside the high-frequency sputtering apparatus, The process involves introducing helium (He) gas into the apparatus and discharging RF plasma within the apparatus to form an InSb film on a flexible substrate set within the apparatus, Inside the aforementioned apparatus, nitrogen (N 2 The process involves introducing a gas and discharging an RF plasma onto a Si target within the apparatus to form a SiN cap film on the InSb film of the flexible substrate, A step of crystallizing InSb on the substrate for film formation, on which the InSb film and cap film have been formed, A method for manufacturing a functional thin-film semiconductor, characterized by comprising the above.

8. After creating a high vacuum inside the high-frequency sputtering apparatus, The process involves introducing helium (He) gas into the apparatus and discharging RF plasma within the apparatus to form an InSb film on a flexible substrate set within the apparatus, The process involves introducing argon (Ar) gas into the apparatus and discharging RF plasma onto a SiN target within the apparatus to form a SiN cap film on the InSb film of the flexible substrate. A step of crystallizing InSb on the substrate for film formation, on which the InSb film and cap film have been formed, A method for manufacturing a functional thin-film semiconductor, characterized by comprising the above.

9. After creating a high vacuum inside the high-frequency sputtering apparatus, The process involves introducing helium (He) gas into the apparatus and discharging RF plasma within the apparatus to form an InSb film on a flexible substrate set within the apparatus, Into the said device, argon (Ar) gas is introduced, and RF plasma is discharged in the said device onto a target made of SiO 2 to form a cap film made of SiO 2 on the InSb film of the flexible substrate; A step of crystallizing InSb on the substrate for film formation, on which the InSb film and cap film have been formed, A method for manufacturing a functional thin-film semiconductor, characterized by comprising the above.

10. Any one of claims 1 to 9 Before or after the process of forming the cap film, The process involves annealing at a temperature where InSb crystallization does not begin. A method for manufacturing a functional thin-film semiconductor, characterized by including [the specified element].

11. Any one of claims 1 to 9 Before the process of depositing the InSb film, Inside the high-frequency sputtering apparatus, nitrogen (N 2 By introducing a gas or argon (Ar) gas and discharging an RF plasma within the apparatus, SiN or SiO2 is deposited onto the substrate set in the apparatus. 2 A process for forming an insulating film. A method for manufacturing a functional thin-film semiconductor, characterized by including [the specified element].

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