Film forming device

Abstract

To provide a film deposition apparatus that performs film deposition with respect to a surface of a material to be processed at high speed and can form a uniform and high-quality film over a wide range.SOLUTION: A material to be processed 8 having conductivity is connected to ground potential. A sheath expansion electrode 30 is disposed around an outer periphery of the material to be processed 8. Applying a positive bias voltage to the electrode expands a sheath layer along a film formation region 10 of the material to be processed 8. A microwave is introduced to the material to be processed 8 from an introduction surface 22D of a microwave supply port 22 and propagated to the sheath layer as a surface wave. A high-density plasma is generated along the film formation region 10 and a high-quality film is formed in the film formation region 10 of the material to be processed 8 at high speed.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a film-forming apparatus for forming a film on the surface of a workpiece material.

Background Art

[0002] Conventionally, an apparatus for performing a film-forming treatment on the surface of a conductive workpiece material such as steel has been known. For example, the film-forming apparatus described in Patent Document 1 applies a negative bias voltage to the workpiece material and propagates the microwave supplied from the microwave supply port along the sheath layer generated in the film-forming region on the surface of the workpiece material. As a result, the plasma extends, and the raw material gas is decomposed by the plasma, so that a film-forming treatment is performed on the surface of the workpiece material. In Patent Document 1, an auxiliary electrode is disposed around the outside of the workpiece material, and a ground potential or a positive bias voltage is applied to the auxiliary electrode. Thereby, the thickness of the sheath layer on the side opposite to the microwave supply port side is increased to reduce the attenuation of the plasma density and reduce the reduction of the film-forming treatment ability.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in Patent Document 1, since a negative bias voltage is applied to the workpiece material, when attempting to form a film with low conductivity such as diamond, abnormal discharge (so-called arcing phenomenon) occurs, and a problem arises in that a film with good quality cannot be formed.

[0005] An object of the present invention is to provide a film-forming apparatus capable of performing a film-forming treatment on the surface of a workpiece material at high speed and forming a uniform and high-quality film over a wide range.

Means for Solving the Problems

[0006] A film-forming apparatus according to one aspect of the present invention includes a processing container in which a conductive workpiece can be placed, a gas supply unit for supplying gas to the processing container, a microwave supply unit for supplying microwaves for generating plasma along the film-forming region of the workpiece, a voltage application unit for applying a bias voltage to the workpiece to expand the sheath layer along the film-forming region of the workpiece, and an introduction surface for introducing the microwaves supplied from the microwave supply unit to the workpiece, wherein the workpiece is positioned to protrude into the processing container relative to the introduction surface, and the microwaves are introduced from the introduction surface to the workpiece. A film deposition apparatus comprising a microwave inlet for introducing microwaves and propagating them as surface waves to the sheath layer, which has been expanded along the film formation region of the workpiece by the application of the bias voltage, wherein the workpiece is electrically connected to the same potential as the ground potential of the voltage application unit, and the apparatus comprises a sheath expansion electrode for expanding the thickness of the sheath layer formed on the opposite side of the introduction surface from the microwave supply in the protruding direction of the workpiece, the electrode being arranged around the outside of the workpiece and to which a positive bias voltage supplied from the voltage application unit is applied.

[0007] The film deposition apparatus can rapidly form high-quality films by generating a high-density and uniform plasma on the surface of the workpiece using the known MVP method (Microwave sheath-Voltage combination Plasma method). By setting the potential of the workpiece to ground potential, the deposition apparatus can suppress the occurrence of arcing phenomena and form high-quality films. Furthermore, by applying a positive bias voltage to the sheath expansion electrode, the deposition apparatus can increase the thickness of the sheath layer formed on the opposite side of the workpiece, enabling the formation of a uniform film over a wide area.

[0008] In this embodiment, the sheath expanding electrode may be arranged to surround the outer perimeter of the introduction surface at the microwave inlet and may extend in the direction of protrusion within the processing container. Since the sheath expanding electrode surrounds the outer perimeter of the introduction surface, microwaves introduced into the workpiece from the introduction surface do not leak outside the sheath expanding electrode, and the film deposition apparatus can form a uniform and high-quality film over a wide area at high speed.

[0009] In this embodiment, the tip of the sheath expanding electrode in the protruding direction may be located at a position corresponding to the edge on the introduction surface side of the film formation region, which is pre-defined as the region on the workpiece where a film is to be formed, in a direction perpendicular to the protruding direction, or at a position opposite to the protruding direction. No film is formed on the outer perimeter of the workpiece surrounded by the sheath expanding electrode. Therefore, by setting the position of the tip of the sheath expanding electrode, the film formation apparatus can reliably perform film formation in the film formation region.

[0010] In this embodiment, the tip of the sheathed expanding electrode may be positioned in the protruding direction relative to the introduction surface of the microwave inlet. In the film deposition process by the MVP method, a film is formed in the protruding direction relative to the introduction surface of the microwave inlet. Near the introduction surface, an incomplete film is formed, which is known as introduction surface contamination. Therefore, by positioning the tip of the sheathed expanding electrode on the protruding side relative to the introduction surface of the microwave inlet, introduction surface contamination can be prevented.

[0011] In this embodiment, the sheath expanding electrode may extend at least 5 mm in the protruding direction. If the length of the sheath expanding electrode in the protruding direction is less than 5 mm, plasma may be generated between the workpiece material and the sheath expanding electrode in a direction perpendicular to the protruding direction, and a film may be formed outside the film formation region.

[0012] In this embodiment, the sheathed expanding electrode may be formed from a knitted or woven fabric having mesh or weave through which the gas can pass, and containing metal wires, or from a metal plate having holes through which the gas can pass, and may be an electrode that surrounds the outer periphery of the workpiece, including a film-forming region that is predetermined as the area on the workpiece to be coated. By arranging a gas-passable sheathed expanding electrode around the outer periphery of the workpiece, the film-forming apparatus can rapidly form a wide, uniform, and high-quality coating over the entire surface of the workpiece, including the film-forming region.

[0013] In this embodiment, the gas supply unit supplies a gas containing at least hydrocarbons, and the film deposition apparatus may deposit a diamond film on the workpiece. By setting the potential of the workpiece to the ground potential, the film deposition apparatus can suppress the occurrence of arcing, which is a problem when forming low-conductivity films. Therefore, the film deposition apparatus can form low-conductivity films, such as diamond films, uniformly, with high quality, and at high speed over a wide area.

[0014] In this embodiment, the sheath expanding electrode and the workpiece are electrically insulated by an insulating member, and the thickness of the insulating member in the direction of introduction of the microwaves that pass through the microwave inlet and are introduced to the workpiece from the introduction surface may be 1 / 4 or less of the wavelength of the microwaves. Therefore, the film deposition apparatus can prevent a portion of the microwaves supplied to the workpiece from leaking into the processing container through the insulating member.

[0015] In this embodiment, the positive bias voltage applied to the sheath expansion electrode may be a voltage whose potential difference from the ground potential is lower than the potential difference required for plasma generation. Since plasma is not generated by the positive bias voltage applied to the sheath expansion electrode, the film deposition apparatus can reliably expand the sheath layer formed along the film formation region of the workpiece.

[0016] In this embodiment, the processing vessel is provided with a metal cover that covers the microwave inlet, and the microwave inlet has a base that guides the microwaves supplied from the microwave supply unit into the processing vessel, a projection that protrudes from the base toward the processing vessel and extends along the microwave introduction direction, and introduces the microwaves to the workpiece from the introduction surface which is the tip surface on the protruding direction side, and a recess that opens to the introduction surface, is formed in a recess shape with the protruding direction aligned with the microwave introduction direction, and holds the workpiece on the side opposite to the film formation region in the protruding direction, and the cover covers the base of the microwave inlet and restricts the microwave introduction direction from the base toward the introduction surface of the projection. The cover restricts the microwave introduction direction toward the introduction surface and aligns it with the protruding direction, so the film forming apparatus can form a film on the film formation region of the workpiece more efficiently. [Brief explanation of the drawing]

[0017] [Figure 1] This figure shows the schematic configuration of the film deposition apparatus 1 of the first embodiment. [Figure 2] This graph shows the distribution of plasma emission intensity at the protruding position of the workpiece. [Figure 3] This figure shows the arrangement of the microwave supply port 22, the workpiece 8, and the sheath expansion electrode 130 in modified example 1. [Figure 4] This figure shows the arrangement of the microwave supply port 22, the workpiece 8, and the sheath expansion electrode 230 in modified example 2. [Figure 5] This figure shows the arrangement of the microwave supply port 22, the workpiece 8, and the sheath expansion electrode 330 in modified example 3. [Figure 6] This figure shows the arrangement of the microwave supply port 22, the workpiece 8, and the sheath expansion electrode 430 in modified example 4. [Figure 7] This figure shows the arrangement of the microwave supply port 22, the workpiece 8, and the sheath expansion electrode 530 in the second embodiment. [Figure 8]It is a diagram showing the arrangement of the microwave supply port 22, the work material 8, and the sheath expansion electrode 630 of Modification 5.

Embodiments for Carrying Out the Invention

[0018] <First Embodiment> The film forming apparatus 1 of the first embodiment of the present invention will be described with reference to the drawings. The film forming apparatus 1 is an apparatus for forming a diamond film on the surface of the work material 8. As shown in FIG. 1, the film forming apparatus 1 includes a processing container 2, a vacuum pump 3, a gas supply unit 5, and a control unit 6. The processing container 2 is made of metal such as stainless steel and is a hermetic container. The processing container 2 is electrically connected to the ground potential (GND). The vacuum pump 3 is a pump capable of evacuating the inside of the processing container 2 through a pressure regulating valve 7. Inside the processing container 2, a conductive work material 8 to be film formed is arranged, and the work material 8 is supported by a microwave supply port 22.

[0019] In this embodiment, the work material 8 is a carbide K10 drill for hole machining. The material of the work material 8 is not particularly limited as long as the film forming region 10 has conductivity. Carbide K10 is a cemented carbide based on the classification described in JIS B 4053:2013. The work material 8 is not limited to carbide K10, as long as the film forming region 10 has conductivity.

[0020] For example, a mass flow controller (MFC) is used for the gas supply unit 5. The gas supply unit 5 supplies a raw material gas for film formation into the processing container 2. The raw material gas is, for example, methane gas (CH4) and hydrogen gas (H2), and is appropriately mixed and supplied into the processing container 2 under the control of the MFC. Although not shown, an inert gas is also supplied into the processing container 2. The control unit 6 controls the entire apparatus. The control unit 6 includes a CPU, a ROM, a RAM, etc.

[0021] In the film deposition apparatus 1, plasma is generated for depositing a diamond film onto a workpiece 8 held inside the processing container 2. The film deposition apparatus 1 is equipped with a microwave pulse control unit 11, a microwave oscillator 12, a microwave power supply 13, and a DC power supply 15 to generate the plasma. In this embodiment, surface wave excited plasma is generated by the method disclosed in Japanese Patent Application Publication No. 2004-47207 (hereinafter referred to as the "MVP method (Microwave sheath-Voltage combination Plasma method)"). The following description will explain the MVP method.

[0022] The microwave pulse control unit 11 supplies a pulse signal to the microwave power supply 13 according to the instructions of the control unit 6. The microwave power supply 13 supplies power to the microwave oscillator 12 according to the instructions of the control unit 6. The microwave oscillator 12 oscillates a 2.45 GHz microwave pulse according to the instructions of the control unit 6 and supplies the microwave pulse to the isolator 17, which will be described later.

[0023] Microwave pulses are supplied from the microwave oscillator 12 to the film formation region 10 of the workpiece 8 via the isolator 17, tuner 18, waveguide 19, coaxial waveguide 21, and microwave supply port 22. The coaxial waveguide 21 is projected from the waveguide 19 via a coaxial waveguide converter (not shown). The microwave supply port 22 is made of a dielectric material such as quartz that transmits microwaves. The isolator 17 prevents reflected microwaves from returning to the microwave oscillator 12. The tuner 18 matches the impedance before and after the tuner 18 so that reflected microwaves are minimized.

[0024] The microwave supply port 22 has a projection 22A that protrudes toward the processing container 2 and a base 22B that supports the projection 22A. The base 22B is covered with a metal cover 23. The cover 23 is electrically connected to the processing container 2. The projection 22A has a recess 22C that opens into the processing container 2. The workpiece 8 is inserted into the recess 22C. Therefore, the workpiece 8 is positioned so as to protrude toward the waveguide 19 inside the processing container 2. A jig (not shown) that supports the workpiece 8 may be provided inside the recess 22C. An electrode (not shown) is connected to the upper end of the workpiece 8. The electrode is electrically connected to the ground potential (GND). That is, the potential of the workpiece 8 is the same as the ground potential of the processing container 2.

[0025] The cover 23 of the base 22B restricts the direction of introduction of microwave pulses that have passed through the microwave supply port 22. The cover 23 prevents microwave pulses from leaking into the processing container 2 by covering the outside of the base 22B in directions other than the introduction direction. The recess 22C of the microwave supply port 22 is formed in the protruding portion 22A such that the direction in which the workpiece 8 inserted into the recess 22C protrudes toward the processing container 2 is aligned with the introduction direction. In addition, one end of the workpiece 8 is surrounded on its outer periphery by the protruding portion 22A. Plasma is not generated in the covered portion, and no film is formed there. That is, the film is formed on the side in the protruding direction that is the tip surface of the protruding portion 22A in the protruding direction, above the introduction surface 22D. For convenience, the side in the protruding direction may be called "above" the protruding direction, and the side opposite the protruding direction may be called "below" the protruding direction.

[0026] A sheath expansion electrode 30 is provided around the outer periphery of the protrusion 22A of the microwave supply port 22. The sheath expansion electrode 30 is a cylindrical electrode made of a metallic material and is impermeable to gas. The tip 30A of the sheath expansion electrode 30 on the protrusion direction side is at the same position in the protrusion direction as the introduction surface 22D of the protrusion 22A of the microwave supply port 22. The length of the sheath expansion electrode 30 in the protrusion direction is at least 5 mm. The upper limit is within the range that fits inside the processing container 2. If the length of the sheath expansion electrode 30 in the protrusion direction is less than 5 mm, the plasma may pass over the sheath expansion electrode 30, and a diamond film may be formed on the opposite side of the film formation region (described later) in the protrusion direction.

[0027] The lower end of the sheathed expanding electrode 30 is located on the cover 23 that covers the base 22B, and an insulating member 24 is provided between the cover 23 and the lower end of the sheathed expanding electrode 30. The insulating member 24 surrounds the outer circumference of the protruding portion 22A and is disc-shaped with thickness in the direction of introduction of the microwave pulse. The insulating member 24 electrically insulates the sheathed expanding electrode 30 from the cover 23 and the processing container 2. The thickness of the insulating member 24 is less than 1 / 4 of the wavelength of the microwave pulse, and is a thickness that does not cause dielectric breakdown when power is applied. This configuration prevents microwave pulses passing through the microwave supply port 22 from passing through the insulating member 24 between the cover 23 and the sheathed expanding electrode 30 and leaking into the processing container 2 in a direction different from the introduction direction.

[0028] The sheath expansion electrode 30 is electrically connected to the positive voltage pulse generation unit 16, and a positive bias voltage pulse is applied. The DC power supply 15 supplies a positive bias voltage to the positive voltage pulse generation unit 16 according to the instructions of the control unit 6. The negative terminal of the DC power supply 15 is electrically connected to ground potential (GND). The positive voltage pulse generation unit 16 pulses the positive bias voltage supplied from the DC power supply 15. This pulsing process is a process in which the positive voltage pulse generation unit 16 controls the magnitude, period, and duty cycle of the positive bias voltage pulse according to the instructions of the control unit 6.

[0029] A surface wave-excited plasma is generated by controlling the application of microwave pulses and positive bias voltage pulses to at least a portion of them simultaneously. The microwave frequency is not limited to 2.45 GHz, but can be any frequency between 0.3 GHz and 50 GHz. In addition, the microwave is a pulsed microwave pulse, but a continuous microwave may also be used. Furthermore, the film deposition apparatus 1 may apply a continuous positive bias voltage to the sheath expansion electrode 30 from a DC power supply 15 instead of the positive voltage pulse generation unit 16.

[0030] A radiation thermometer 29 is positioned near the outside of a window 27 provided on the side wall of the processing container 2. The radiation thermometer 29 is electrically connected to the control unit 6. The radiation thermometer 29 receives infrared radiation and calculates the intensity of the received infrared radiation. From the calculated infrared radiation intensity, the radiation thermometer 29 calculates the surface temperature of the workpiece 8 and outputs the temperature information of the workpiece 8 to the control unit 6.

[0031] The control unit 6 outputs control signals to the DC power supply 15 and the microwave power supply 13 to control the applied power of the microwave pulses and the applied voltage of the positive voltage pulses. The control unit 6 outputs control signals to the positive voltage pulse generator 16 and the microwave pulse control unit 11 to control the application timing and supply voltage of the pulsed positive bias voltage pulses, and the supply timing and supply power of the microwave pulses generated from the microwave oscillator 12.

[0032] The control unit 6 outputs a flow rate control signal to the gas supply unit 5 to control the supply of raw material gas and inert gas. Based on a pressure signal representing the pressure inside the processing container 2, which is input from a vacuum gauge 26 attached to the processing container 2, the control unit 6 outputs a control signal to the pressure adjustment valve 7 to control the pressure inside the processing container 2.

[0033] [Explanation of surface wave-excited plasma] Typically, when generating surface wave-excited plasma, microwaves are supplied along the interface between a plasma with a certain electron (ion) density and a dielectric material in contact with it. The supplied microwaves propagate as surface waves with their electromagnetic energy concentrated at this interface. As a result, the plasma in contact with the interface is excited and further amplified by the high-energy-density surface waves. This generates and maintains a high-density plasma. However, if this dielectric material is replaced with a conductive material, the conductive material does not function as a waveguide for the surface waves, and desirable surface wave propagation and plasma excitation cannot occur.

[0034] On the other hand, a layer of charged particles with essentially single polarity, a so-called sheath layer, is formed near the surface of an object in contact with the plasma. In the case of a workpiece material 8 connected to ground potential, the sheath layer is a layer with low electron density, i.e., positive polarity, and has a relative permittivity ε ≈ 1 in the microwave frequency band. Therefore, by providing a sheath expansion electrode 30 around the outer circumference of the workpiece material 8, connecting the workpiece material 8 to ground potential, and applying a positive bias voltage higher than ground potential to the sheath expansion electrode 30, the sheath thickness of the sheath layer formed along the film formation region 10 of the workpiece material 8 increases, i.e., the sheath layer expands. This sheath layer acts as a dielectric that propagates surface waves at the interface between the plasma and the object in contact with the plasma. The positive bias voltage applied to the sheath expansion electrode 30 is set so that the potential difference with ground potential is lower than the potential difference required for plasma generation.

[0035] Therefore, microwaves are supplied from a microwave supply port 22 located close to one end of the workpiece 8, a positive bias voltage is applied to the sheath expansion electrode 30 located on the outer circumference of the workpiece 8, and the workpiece 8 is connected to ground potential, causing the microwaves to propagate as surface waves along the interface between the sheath layer and the plasma. As a result, a high-density excited plasma based on surface waves is generated along the film formation region 10 of the workpiece 8. This high-density excited plasma is the surface wave excited plasma described above.

[0036] In this MVP method, the workpiece 8 is placed in close contact with the microwave supply port 22, and a sheath layer is formed along the film formation region 10 of the workpiece 8. The workpiece 8 is connected to ground potential, and a sheath expansion electrode 30 is placed around the outer circumference of the workpiece 8. By applying a positive bias voltage, a high-density plasma is generated by microwaves propagating as surface waves along the expanded sheath layer. Because the density of this plasma is high, the workpiece 8 is deposited at high speed. Since the workpiece 8 is positioned opposite the central conductor of the coaxial waveguide 21, microwaves propagate efficiently upwards.

[0037] The sheathed expanding electrode 30 is positioned around the outer circumference of the workpiece 8, covering the area around the protrusion 22A of the microwave supply port 22. The length of the sheathed expanding electrode in the protruding direction is preferably 5 mm or more, and in this embodiment it is 52.7 mm. In the area of ​​the film formation region 10 of the workpiece 8 where the sheathed expanding electrode 30 is positioned, the raw material gas has difficulty reaching it because the protrusion 22A is positioned between the sheathed expanding electrode 30 and the area, making it difficult for a diamond film to form. In other words, the film formation apparatus 1 can form a diamond film on the processing surface of the workpiece 8 in the area that protrudes into the processing container 2 beyond the tip 30A of the sheathed expanding electrode 30 in the protruding direction. The area on the processing surface of the workpiece 8 where the diamond film is to be formed is called the film formation region 10. The film formation region is set according to the application of the workpiece 8. For example, if the workpiece 8 is a drill, the groove length is set in the film formation region. For example, if the workpiece material 8 is an end mill, a blade length is set for the film formation region. In order for the user of the film formation apparatus 1 to form a diamond film in the film formation region set in advance on the workpiece material 8, the user should select a sheath expanding electrode 30 of an appropriate size, or a jig to be inserted into the recess 22C of the microwave supply port 22, such that the position of the tip 30A of the sheath expanding electrode 30 in the protruding direction is the same as the edge of the film formation region on the microwave supply port 22 side (for convenience, referred to as the "lower end" 8A of the film formation region).

[0038] In contrast to conventional film deposition apparatuses that apply a negative bias voltage to the workpiece, the film deposition apparatus 1 of this invention connects the workpiece 8 to ground potential. When hydrocarbon gases are used as raw material gases, various carbides with different structures, such as graphite, diamond, and carbon nanotubes (CNTs), are generated by the plasma. Graphite and CNTs attached to the workpiece are selectively etched by the hydrogen plasma, thus forming a thin diamond film on the surface of the workpiece. Diamond is non-conductive, and when a negative bias voltage is applied to the workpiece as in conventional technology, electric charge accumulates on the surface of the diamond. This causes abnormal discharge (arking phenomenon) due to the potential difference between the accumulated charge and the workpiece, destroying the diamond film. The film deposition apparatus 1 of this embodiment suppresses the occurrence of the arcing phenomenon by reducing the potential difference with the accumulated charge by setting the potential of the workpiece 8 to ground potential, thereby preventing the destruction of the diamond film and enabling the formation of a high-quality diamond film.

[0039] Figure 2 shows the results of an experiment in which a diamond film was formed on a workpiece 8 using the film deposition apparatus 1 configured in this way, and the film formation state was confirmed. In the graph shown in Figure 2, the horizontal axis represents the position of the workpiece 8 in the protruding direction, with the position of the lower end 8A of the film formation region as the origin. That is, the larger the value, the further away it is from the microwave supply port 22. The vertical axis represents the plasma emission brightness.

[0040] A diamond film is formed on the surface of the workpiece 8 by the decomposition of the raw material gas by plasma. It is known that the film formation rate increases with increasing plasma density. Therefore, it is also known that there is a close correlation between plasma density and the film thickness generated on the surface of the workpiece 8. To reduce variations in film thickness, a uniform plasma density distribution is required. One method for measuring plasma density is an optical emission spectrometer (OES). Since the luminescence intensity measured by OES represents the excitation light generated from the plasma, luminescence intensity ≈ plasma density ≈ film thickness. Therefore, by measuring the luminescence intensity distribution during film formation, it is possible to estimate the film thickness distribution of the diamond film generated on the surface of the workpiece 8. That is, the greater the variation in the plasma luminescence intensity value on the vertical axis in Figure 2, the greater the film thickness distribution.

[0041] The experimental conditions are as follows. The workpiece material 8 is a cutting tool made of carbide K10 with a diameter of 10 mm, a total length of 85 mm, and a groove length of 50 mm. In this experiment, the film formation region 10 was defined as the region from the tip of the workpiece material 8 to 50 mm. The microwave pulse of the film deposition apparatus 1 of this application was controlled to have a power of 1500 W, a frequency of 1 kHz, and a duty cycle of 50%. The bias voltage pulse was controlled to have a frequency of 1 kHz and a voltage value of +400 V, with H2 supplied at 200 sccm and CH4 at 2 sccm, and the pressure controlled to be 2 kPa. As a comparative example, the microwave pulse of the film deposition apparatus described in Figure 1 of Japanese Patent Application Publication No. 2016-69685 was controlled to have a power of 1500W, a frequency of 1kHz, and a duty cycle of 50%, and the bias voltage pulse was controlled to have a frequency of 1kHz and a voltage value of -500V. H2 was supplied to the processing vessel at a rate of 200 sccm and CH4 at a rate of 2 sccm, and the pressure was controlled to be 0.8 kPa. The plasma emission brightness was measured in the range from the lower end 8A of the workpiece 8 to a position 50 mm away in the protruding direction. Experimental data showing the plasma emission brightness using the film deposition apparatus 1 of the present application is indicated by "●". Experimental data showing the plasma emission brightness using a conventional film deposition apparatus is indicated by "○".

[0042] As shown in the solid line data of this application, the plasma emission brightness decreased as the distance from the lower end 8A of the film formation region 10 in the protruding direction increased. However, in the region from the lower end 8A of the film formation region up to 50 mm in the protruding direction, a plasma emission brightness of 60% or more was obtained. In other words, according to the experimental data of this application, it was confirmed that the variation in plasma emission brightness in the region from the lower end 8A up to 50 mm in the protruding direction was within ±20%.

[0043] On the other hand, as experimental data from the prior art shows, the plasma emission brightness decreases significantly more than in the present invention as the distance from the lower end 8A of the film formation region in the protruding direction increases, and the plasma emission brightness in the region 50 mm from the lower end 8A in the protruding direction was approximately 20%. That is, the variation in plasma emission brightness in the region from the lower end 8A to 50 mm in the protruding direction is within ±40%. According to experimental data from the prior art, it was confirmed that the region in which the variation in plasma emission brightness is within ±20% is the region from the lower end 8A to 35 mm in the protruding direction.

[0044] Therefore, it was found that by using the film deposition apparatus 1 of the present invention, the film thickness variation can be kept within ±20% in a region up to 50 mm, which is longer than the region from the lower end 8A to 35 mm in the protruding direction in the prior art, and a region can be secured in which sufficient quality as a film thickness can be ensured. Diamond coatings are often used in drilling tools such as drills. In the case of drills, the diamond coating is most effective when formed on the part corresponding to the groove length, so the film formation region 10 is set to 50 mm from the tip, which corresponds to the groove length. Since the groove length of the drill used in this embodiment is 50 mm, the diamond coating is required to have a film thickness variation of within ±20% in the range of 50 mm from the cutting edge. Therefore, the film deposition apparatus 1 of the present invention can form a diamond coating of sufficient quality at high speed. Furthermore, it was confirmed that arcing, which is a quality abnormality, does not occur during film deposition.

[0045] As described above, the film deposition apparatus 1 can form a high-quality film at high speed by generating a high-density and uniform plasma on the surface of the workpiece material 8 by performing a film deposition process using a known MVP method. By setting the potential of the workpiece material 8 to ground potential, the film deposition apparatus 1 can suppress the occurrence of arcing phenomena and form a high-quality film. Furthermore, by applying a positive bias voltage to the sheath expansion electrode 30, the film deposition apparatus 1 can increase the thickness of the sheath layer formed on the side opposite to the microwave supply port 22 with respect to the introduction surface 22D in the protruding direction of the workpiece material 8, thereby forming a uniform film over a wide area.

[0046] The sheath expansion electrode 30 surrounds the outer periphery of the introduction surface 22D of the microwave supply port 22. Therefore, microwaves introduced from the introduction surface 22D onto the workpiece 8 do not leak outside the sheath expansion electrode 30, and the film deposition apparatus 1 can form a uniform and high-quality film over a wide area at high speed.

[0047] No film is formed on the outer periphery of the workpiece 8 surrounded by the sheath expansion electrode 30. Therefore, by setting the position of the tip 30A of the sheath expansion electrode 30, the film deposition apparatus 1 can reliably perform film deposition in the film formation region.

[0048] By setting the potential of the workpiece material 8 to the ground potential, the film deposition apparatus 1 can suppress the occurrence of arcing, which is a problem when forming low-conductivity films. Therefore, the film deposition apparatus 1 can form low-conductivity films, such as diamond films, uniformly, with high quality, and at high speed over a wide area.

[0049] The cover 23 at the base 22B of the microwave supply port 22 is at the same ground potential as the processing container 2. Therefore, the sheath expansion electrode 30, which is positioned on the protruding side of the cover 23 and to which a positive bias voltage is applied, needs to be insulated from the cover 23. The insulating member 24 is provided between the cover 23 and the sheath expansion electrode 30, and its thickness is less than 1 / 4 of the microwave wavelength. Therefore, the film deposition apparatus 1 can prevent a portion of the microwave supplied to the workpiece 8 from leaking into the processing container 2 through the insulating member 24.

[0050] <Example 1> The sheathed expanding electrode 30 has its tip 30A at the same position as the introduction surface 22D of the microwave supply port 22 in the protruding direction, but is not limited to this. For example, as shown in Figure 3, the position of the tip 130A in the protruding direction may be below the introduction surface 22D of the microwave supply port 22 in the protruding direction. The configuration of the other parts of Modification 1 is the same as in the first embodiment. The sheath layer is formed along the surface of the workpiece material 8 from the sheathed expanding electrode 30 toward the protruding direction. When the tip 130A of the sheathed expanding electrode 130 is below the introduction surface 22D in the protruding direction, the workpiece material 8 is covered by the protruding portion 22A in the range from the position of the tip 130A to the position of the introduction surface 22D in the protruding direction, so no diamond film is formed thereon, but a diamond film of sufficient quality can be formed on the side from the introduction surface 22D toward the protruding direction. Therefore, in the case of modification 1, it is preferable that the film formation region on the workpiece material 8 be set such that the position of the introduction surface 22D in the protruding direction is the lower end 8A of the film formation region.

[0051] <Modification 2> For example, as shown in Figure 4, the position of the tip 230A in the protruding direction may be above the introduction surface 22D of the microwave supply port 22 in the protruding direction. The sheathed expanding electrode 230 has a configuration in which the position of the tip 230A extends above the introduction surface 22D in the protruding direction, and there is a gap between the introduction surface 22D and the tip 230A. This gap is approximately the size of the thickness of the protruding portion 22A of the microwave supply port 22. The configuration of the other parts of the modified example 2 is the same as that of the first embodiment. Since it is difficult for the raw material gas to enter the gap between the introduction surface 22D and the tip 230A, it is difficult to form a film of sufficient quality. Therefore, in the case of modified example 2, the position of the tip 230A of the sheathed expanding electrode 230 in the protruding direction can be adjusted to substantially be the lower end 8A of the film formation region.

[0052] In the MVP method of film deposition, the film is formed in a direction protruding from the introduction surface 22D of the microwave supply port 22. Near the introduction surface 22D, an incomplete film is formed, which is known as introduction surface contamination. Therefore, the sheath expanding electrode 230 can prevent introduction surface contamination by positioning its tip 230A on the side protruding from the introduction surface 22D of the microwave supply port 22.

[0053] <Variation 3> For example, as shown in Figure 5, the sheath expanding electrode 330 may be positioned away from the workpiece 8 in a direction perpendicular to the protrusion direction, and outside the microwave supply port 22 cover 23 in a direction perpendicular to the protrusion direction. The configuration of the other parts of Modification 3 is the same as in the first embodiment. In this case, since the cover 23 and the sheath expanding electrode 330 are not arranged side by side in the protrusion direction, the insulating member 324 only needs to insulate the processing container 2 and the sheath expanding electrode 330 outside the cover 23 in a direction perpendicular to the protrusion direction, and there is no need to specify the thickness. Note that a film may also be formed on the exposed portion inside the sheath expanding electrode 30, so incomplete film formation on the introduction surface 22D of the microwave supply port 22 is likely to occur. To suppress introduction surface contamination, the introduction surface 22D should be provided at approximately the same position as the top surface of the cover 23.

[0054] <Modification 4> For example, as shown in Figure 6, the connection of the workpiece 8 to the ground potential may be made via the microwave supply port 422. The microwave supply port 422 has a through hole 422C that penetrates the protruding portion 422A and the base portion 422B in the protruding direction. A ground electrode 421 is provided in the through hole 422C on the base portion 422B side. The ground electrode 421 is electrically connected to the ground potential (GND). The workpiece 8 is held in the through hole 422C on the protruding portion 422A side. The workpiece 8 is electrically connected to the ground electrode 421 within the through hole 422C. The configuration of the other parts of the modified example 4 is the same as in the first embodiment. By providing such a ground electrode 421, it is not necessary to directly electrically connect the workpiece 8 in the processing container 2, and the effort required to place the workpiece 8 in the processing container 2 can be reduced. In the above embodiment and its modified form, the distance between the tips 30A, 130A, 230A, and 330A of the sheath magnifying electrode and the film formation region 10 is preferably between 0.1 and 20 mm at the closest point, and in this embodiment it is 1.5 mm.

[0055] <Second Embodiment> Hereinafter, a second embodiment of the film deposition apparatus 1 of the present invention will be described in detail with reference to the drawings. In the first embodiment, the sheath expanding electrode 30 is arranged around the outer circumference of the protrusion 22A of the microwave supply port 22 that holds the workpiece 8 in the processing container 2. As shown in Figure 7, the sheath expanding electrode 530 in the second embodiment is an electrode formed from a knitted fabric woven with metal strands, and gas can easily pass through the mesh. The sheath expanding electrode 530 is positioned further outward from the cover 23 of the base 22B of the microwave supply port 22 in a direction perpendicular to the protrusion direction, and extends in the protrusion direction to surround the outer circumference of the workpiece 8. Since the cover 23 and the sheath expanding electrode 530 are not arranged side by side in the protrusion direction, the insulating member 524 is provided between the processing container 2 and the sheath expanding electrode 530, further outward from the cover 23 in a direction perpendicular to the protrusion direction, to insulate the processing container 2 and the sheath expanding electrode 530. The configuration of other parts of the second embodiment is the same as in the first embodiment.

[0056] Since the gas easily passes through the mesh of the sheath expanding electrode 530, a sufficient concentration of raw material gas is present between the workpiece 8 and the sheath expanding electrode 530 in a direction perpendicular to the protruding direction of the workpiece 8. Therefore, the film deposition apparatus 1 can rapidly form a wide, uniform, and high-quality film over a wide area in the film formation region 10 of the workpiece 8 on the protruding direction side of the introduction surface 22D of the microwave supply port 22.

[0057] <Modification 5> The sheath expanding electrode 530 of the second embodiment may cover not only the outer periphery of the workpiece 8 but also the entire workpiece 8. For example, the sheath expanding electrode 630 shown in Figure 8 covers the outer periphery of the workpiece 8, extends longer in the protruding direction than the workpiece 8, and closes in a bag-like shape. Similar to the second embodiment, the sheath expanding electrode 630 is an electrode formed from a knitted fabric woven with metal wires, and gas can easily pass through the mesh. Therefore, a sufficient concentration of raw material gas is present inside the sheath expanding electrode 630. Thus, the film deposition apparatus 1 can rapidly form a wide-ranging, uniform, and high-quality film in the film formation region 10 of the workpiece 8 on the protruding side of the introduction surface 22D of the microwave supply port 22.

[0058] <Other variations> In the second embodiment, the sheathed expanding electrodes 530 and 630 are electrodes formed from knitted fabric, but they may also be electrodes formed from a fabric in which metal wires are woven in, allowing gas to easily pass through the weave. Alternatively, they may be electrodes formed from perforated metal with multiple through holes in a cylindrical or bag-like shape, allowing gas to easily pass through. Furthermore, modification 4 of the first embodiment can also be applied to the second embodiment. The distance between the sheathed expanding electrodes 530 and 630 and the film formation area is preferably between 10 and 60 mm at the closest position, and in this embodiment it is 39 mm.

[0059] In the first and second embodiments, the microwave pulse control unit 11, microwave oscillator 12, microwave power supply 13, isolator 17, tuner 18, waveguide 19, and coaxial waveguide 21 are examples of the "microwave supply unit" of the present invention. The DC power supply 15 is an example of the "voltage application unit" of the present invention. The microwave supply port 22 is an example of the "microwave inlet" of the present invention. The lower end 8A of the film formation region is an example of the "edge portion" of the present invention. [Explanation of Symbols]

[0060] 1 Film deposition equipment 2 Processing container 5. Gas Supply Department 8 Work material 8A bottom end 10 Film formation area 11 Microwave pulse control unit 12 Microwave Oscillator 13 Microwave power supply 15 DC power supply 17 Isolators 18 tuners 19 Waveguide 21 Coaxial waveguide 22 Microwave supply port 22A Protrusion 22B base 22C recess 22D Introduction 23 Cover 24 Insulating material 30 Sheath Magnifying Electrode 30A tip

Claims

1. A processing container capable of arranging a conductive workpiece inside, A gas supply unit that supplies gas to the processing container, A microwave supply unit that supplies microwaves to generate plasma along the film formation region of the workpiece, A voltage application unit applies a bias voltage to the workpiece that expands the sheath layer along the film formation region of the workpiece, A film deposition apparatus comprising an introduction surface for introducing the microwaves supplied from the microwave supply unit to the workpiece, and a microwave inlet for introducing the microwaves from the introduction surface to the workpiece which is positioned to protrude into the processing container relative to the introduction surface, and propagating the microwaves as surface waves to the sheath layer which is expanded along the film formation region of the workpiece by the application of the bias voltage, The workpiece is electrically connected to the same potential as the ground potential of the voltage application section. An electrode for increasing the thickness of the sheath layer formed on the side opposite to the microwave inlet with respect to the introduction surface in the protruding direction of the workpiece, comprising a sheath expanding electrode arranged around the outer circumference of the workpiece and to which a positive bias voltage supplied from the voltage application unit is applied. A film deposition apparatus characterized by the following.

2. The sheath expansion electrode is positioned to surround the outer perimeter of the introduction surface at the microwave inlet and extends in the direction of protrusion within the processing container. The film deposition apparatus according to claim 1, characterized by the following:

3. The tip of the sheath expanding electrode in the aforementioned protruding direction is In a direction perpendicular to the aforementioned protrusion direction, the following is positioned on the opposite side of the introduction surface from the film-forming region, which is predetermined as the region on the workpiece where a film is to be formed, and The film-forming region is positioned at a first position which includes the end closest to the introduction surface and is located in a plane perpendicular to the protruding direction, or at a second position which is offset from the plane in the protruding direction. The film deposition apparatus according to claim 2, characterized by the following:

4. The tip of the sheath expansion electrode is positioned in the protruding direction relative to the introduction surface of the microwave inlet. The film deposition apparatus according to claim 3, characterized by the following:

5. The sheath expanding electrode extends at least 5 mm in the direction of protrusion. A film deposition apparatus according to claim 3 or 4, characterized by the above.

6. The sheathed expanding electrode is formed from a knitted or woven fabric having mesh or weave through which the gas can pass, and containing metal wires, or from a metal plate having holes through which the gas can pass, and is an electrode that surrounds the outer periphery of the workpiece, including a film-forming region that is predetermined as a region for forming a film on the workpiece. The film deposition apparatus according to claim 1, characterized by the following:

7. The gas supply unit supplies a gas containing at least hydrocarbons, The film deposition apparatus deposits a diamond film onto the workpiece. A film deposition apparatus according to any one of claims 1 to 6, characterized by the following:

8. The sheath expanding electrode and the workpiece are electrically insulated by an insulating member, The thickness of the insulating member in the direction of introduction of the microwaves that pass through the microwave inlet and are introduced into the workpiece from the introduction surface is 1 / 4 or less of the wavelength of the microwaves. A film deposition apparatus according to any one of claims 1 to 7, characterized by the following:

9. The positive bias voltage applied to the sheath expansion electrode is such that the potential difference with respect to the ground potential is lower than the potential difference required for plasma generation. A film deposition apparatus according to any one of claims 1 to 8, characterized by the following:

10. The processing container is equipped with a metal cover that covers the microwave inlet, The aforementioned microwave inlet is, A base that guides the microwaves supplied from the microwave supply unit into the processing container, A protruding portion that extends from the base toward the processing container, along the microwave introduction direction, and introduces the microwave into the workpiece from the introduction surface which is the tip surface on the protruding direction side, The recess is formed in a recess shape that opens to the introduction surface and whose protruding direction is aligned with the microwave introduction direction, and which holds the workpiece material on the side opposite to the protruding direction from the film formation region. It has, The cover covers the base of the microwave inlet and restricts the direction of microwave introduction from the base to the introduction surface of the protruding portion. A film deposition apparatus according to any one of claims 1 to 9, characterized by the following:

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