Magnetic device

Abstract

To provide a magnetic device capable of improving characteristics. A magnetic device according to an embodiment includes a first conductive member and a first element part. The first element part includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first magnetic layer is provided between the first conductive member and the second magnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction from the first magnetic layer to the second magnetic layer. The first magnetic layer includes a first magnetic region provided between the first conductive member and the first non-magnetic layer, a second magnetic region provided between the first conductive member and the first magnetic region, and a first intermediate region that is provided between the second magnetic region and the first magnetic region and that includes Ir.

Description

magnetic devices

[0001] FIELD OF THE INVENTION Embodiments of the present invention relate to magnetic devices.

[0002] Magnetic devices including magnetic layers are used in a variety of applications, and improvements in the characteristics of magnetic devices are desired.

[0003] Patent No. 6545853

[0004] Embodiments of the present invention provide magnetic devices that can have improved performance.

[0005] The magnetic device according to the embodiment includes a first conductive member and a first element unit. The first element unit includes a first magnetic layer, a second magnetic layer, and a first non-magnetic layer. The first magnetic layer is provided between the first conductive member and the second magnetic layer. The first non-magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction from the first magnetic layer to the second magnetic layer. The first magnetic layer includes a first magnetic region provided between the first conductive member and the first non-magnetic layer, a second magnetic region provided between the first conductive member and the first magnetic region, and a first intermediate region including Ir provided between the second magnetic region and the first magnetic region.

[0006] FIG. 1 is a schematic cross-sectional view illustrating the magnetic device according to the first embodiment. FIG. 2 is a schematic cross-sectional view illustrating the magnetic device of a reference example. FIG. 3 is a schematic cross-sectional view illustrating the magnetic device of a reference example. FIG. 4 is a graph illustrating the characteristics of the magnetic device. FIG. 5 is a schematic cross-sectional view illustrating the magnetic device according to the first embodiment. FIG. 6 is a schematic cross-sectional view illustrating the magnetic device according to the first embodiment. FIG. 7 is a schematic cross-sectional view illustrating the magnetic device according to the first embodiment. FIG. 8 is a graph illustrating the characteristics of the magnetic device. FIG. 9 is a schematic perspective view illustrating the magnetic device according to the second embodiment. FIG. 10 is a schematic plan view illustrating the magnetic device according to the second embodiment. FIG. 11 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment. FIG. 12 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment. FIG. 13 is a micrograph image illustrating the magnetic device according to the second embodiment. FIG. 14 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment. FIG. 15 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment. Fig. 16 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment. Fig. 17 is a schematic cross-sectional view illustrating the magnetic device according to the third embodiment. Fig. 18 is a schematic cross-sectional view illustrating the magnetic device according to the fourth embodiment. Fig. 19 is a schematic cross-sectional view illustrating the magnetic device according to the fourth embodiment.

[0007] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc., are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions will be omitted as appropriate.

[0008] 1 is a schematic cross-sectional view illustrating a magnetic device according to a first embodiment. As shown in FIG. 1, a magnetic device 101 according to the embodiment includes a first conductive member 51 and a first element portion 11E.

[0009] The first element unit 11E includes a first magnetic layer 11, a second magnetic layer 12, and a first non-magnetic layer 11M. The first magnetic layer 11 is provided between the first conductive member 51 and the second magnetic layer 12.

[0010] The first direction D1 from the first magnetic layer 11 to the second magnetic layer 12 is defined as the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis and X-axis directions is defined as the Y-axis direction. For example, the first magnetic layer 11, the second magnetic layer 12, and the first non-magnetic layer 11M are aligned along the XY plane.

[0011] The first nonmagnetic layer 11M is provided between the first magnetic layer 11 and the second magnetic layer 12 in the first direction D1.

[0012] The first magnetic layer 11 includes a first magnetic region 11A, a second magnetic region 11B, and a first intermediate region 11C. The first magnetic region 11A is provided between the first conductive member 51 and the first non-magnetic layer 11M. The second magnetic region 11B is provided between the first conductive member 51 and the first magnetic region 11A. The first intermediate region 11C is provided between the second magnetic region 11B and the first magnetic region 11A. The first intermediate region 11C includes Ir. The first intermediate region 11C is, for example, an Ir layer.

[0013] For example, the magnetization direction of the first magnetic layer 11 can be controlled by a current flowing through the first conductive member 51. The state of change in the magnetization of the first magnetic layer 11 differs depending on the direction of the current. The electrical resistance of the first element unit 11E changes depending on the change in the angle between the magnetization of the first magnetic layer 11 and the magnetization of the second magnetic layer 12. For example, the first magnetic layer 11 is a switching layer. The second magnetic layer 12 is, for example, a reference layer.

[0014] At this time, the voltage between the first conductive member 51 and the second magnetic layer 12 changes the ease with which the magnetization of the first magnetic layer 11 changes. The electrical resistance of the first element unit 11E can be controlled by a combination of voltage and current. For example, multiple first element units 11E may be provided on one first conductive member 51. For example, at least one of the multiple first element units 11E can be selected by voltage, thereby controlling the electrical resistance.

[0015] In this way, the electrical resistance between the first conductive member 51 and the second magnetic layer 12 can be changed by the direction of the current flowing through the first conductive member 51 and the voltage V1 applied between the first conductive member 51 and the second magnetic layer 12. The magnetic device 101 can be used, for example, as a computing element. The magnetic device 101 can be used, for example, as a memory.

[0016] The operation of changing the electrical resistance corresponds to a write operation. The write operation controls the magnetization of the first magnetic layer 11. After the write operation, the magnetization state may change due to, for example, thermal fluctuations, which may result in unintended electrical resistance. The time during which the electrical resistance is maintained corresponds to the retention time. A small current (threshold current) is preferable for writing. On the other hand, a long retention time is preferable. A large retention energy corresponding to the retention time is preferable.

[0017] In the embodiment, the first magnetic layer 11 includes a first intermediate region 11C containing Ir. It has been found that the provision of such a first intermediate region 11C can reduce the write current. It has also been found that the provision of such a first intermediate region 11C can provide large retention energy and long retention time.

[0018] An example of the magnetic device 101 will be described below, comparing it with the characteristics of the reference examples. Figures 2 and 3 are schematic cross-sectional views illustrating the magnetic device of the reference example. As shown in Figure 2, the magnetic device 109a of the first reference example does not have the second magnetic region 11B and the first intermediate region 11C. Except for this, the configuration of the magnetic device 109a is the same as that of the magnetic device 101.

[0019] 3, in the magnetic device 109b of the first reference example, the first magnetic layer 11 includes a first magnetic region 11A, a second magnetic region 11B, and a first intermediate region 11C. In the magnetic device 109b, the first intermediate region 11C is a Ru layer. Except for this, the configuration of the magnetic device 109b is the same as that of the magnetic device 101.

[0020] FIG. 4 is a graph illustrating the characteristics of a magnetic device. FIG. 4 illustrates the calculation results of the characteristics of the above-mentioned magnetic devices 101, 109a, and 109b. In FIG. 4, the horizontal axis is retention energy RE1. The vertical axis is write threshold current Iw. It is preferable that retention energy RE1 is large. It is preferable that write threshold current Iw is small. FIG. 4 shows the characteristics of each of the magnetic devices 101, 109a, and 109b when the first element portion 11E has three different sizes.

[0021] 4, in the magnetic device 109a of the first reference example, the write threshold current Iw is small, but the retention energy RE1 is small. In the first reference example, the retention time is short, making it difficult to obtain stable characteristics.

[0022] 4, the magnetic device 109b of the second reference example has a larger retention energy RE1 than the magnetic device 109a, but a larger write threshold current Iw. The second reference example requires a larger write current. For example, the current consumption is large. The large current easily deteriorates the element.

[0023] As shown in Figure 4, the magnetic device 101 according to the embodiment has a large retention energy RE1. The magnetic device 101 has a small write threshold current Iw. The magnetic device 101 has stable characteristics. Power consumption can be reduced. Deterioration of the element is suppressed, and stable characteristics can be obtained over a long period of time. According to the embodiment, it is possible to improve a magnetic device whose characteristics can be improved.

[0024] The magnetic device 101 is provided with a first intermediate region 11C containing Ir. For example, the first intermediate region 11C includes an interface facing the first magnetic region 11A and an interface facing the second magnetic region 11B. It is believed that the inclusion of Ir in the first intermediate region 11C generates perpendicular magnetic anisotropy in the region including these two interfaces. It is believed that perpendicular magnetic anisotropy makes it easier for the magnetization to change in the first magnetic region 11A and the second magnetic region 11B during switching. This is believed to reduce the write threshold current Iw. On the other hand, after switching is completed and the magnetization direction changes, the magnetization is relatively stable, and a large retention energy RE1 is obtained.

[0025] On the other hand, in the second reference example, the first intermediate region 11C containing Ru is provided. When Ru is used, it is considered that perpendicular magnetic anisotropy does not occur at the two interfaces of the first intermediate region 11C. For this reason, it is considered that the write threshold current Iw is large in the second reference example.

[0026] In the first reference example, perpendicular magnetic anisotropy may occur at the interface between the first magnetic layer 11 and the first non-magnetic layer 11M. This is thought to result in a small write threshold current Iw. However, in the first reference example, the magnetization moves as a unit in the first magnetic layer 11. For this reason, the magnetization is relatively unstable, and the retention energy RE1 is thought to be small.

[0027] In contrast, in the embodiment, perpendicular magnetic anisotropy is obtained at the two interfaces of the first intermediate region 11C containing Ir, and perpendicular magnetic anisotropy is also obtained at the interface between the first magnetic region 11A and the first non-magnetic layer 11M. This results in a large perpendicular magnetic anisotropy overall. This reduces the write threshold current Iw. Furthermore, by providing the first intermediate region 11C containing Ir between the first magnetic region 11A and the second magnetic region 11B, these magnetic regions are magnetically coupled, which is believed to result in stable magnetization after switching. This is believed to result in a large retention energy RE1.

[0028] It was found that the write efficiency of the magnetic device 101 according to the embodiment was 3.9 to 4.2 times that of the magnetic device 109b of the second reference example. This is thought to be related to the fact that a small write threshold current Iw is obtained in the magnetic device 101. A higher write efficiency is obtained in the first intermediate region 11C of Ir than in the first intermediate region 11C of Ru. This is thought to be related to, for example, the differences in the elemental properties (e.g., crystal structure, lattice spacing, etc.) between Ir and Ru.

[0029] In the embodiment, the first magnetic layer 11 has, for example, an SAF (synthetic anti-ferromagnetic) structure. For example, it is considered that a special effect (high write efficiency) can be obtained by combining the above-described properties of Ir as an element with the SAF structure.

[0030] For example, it is preferable that the first magnetic region 11A and the second magnetic region 11B are magnetically coupled. This makes it easier to obtain stable magnetization. For example, the first magnetic region 11A and the second magnetic region 11B are antiparallel coupled. For example, the first magnetic region 11A and the second magnetic region 11B may be parallel coupled.

[0031] As shown in FIG. 1 , the thickness of the first intermediate region 11C in the first direction D1 is defined as a first intermediate region thickness t11C. The first intermediate region thickness t11C is preferably, for example, 0.3 nm or more and 0.7 nm or less. In this case, the first magnetic region 11A and the second magnetic region 11B are antiparallel coupled. Alternatively, the first intermediate region thickness t11C is preferably, for example, 0.02 nm or more and less than 0.3 nm. In this case, the first magnetic region 11A and the second magnetic region 11B are parallel coupled. Alternatively, the first intermediate region thickness t11C is preferably, for example, more than 0.7 nm and 5 nm or less. In this case, the first magnetic region 11A and the second magnetic region 11B are parallel coupled.

[0032] 1, the thickness of the first non-magnetic layer 11M in the first direction D1 is defined as a first non-magnetic layer thickness t11M. In one example, the first non-magnetic layer thickness t11M is 0.8 nm or more and 2 nm or less.

[0033] 1, the thickness of the first magnetic region 11A in the first direction D1 is defined as a first magnetic region thickness t11A. In one example, the first magnetic region thickness t11A is 0.5 nm or more and 2 nm or less.

[0034] 1, the thickness of the second magnetic region 11B in the first direction D1 is defined as a second magnetic region thickness t11B. In one example, the second magnetic region thickness t11B is 0.7 nm or more and 3 nm or less.

[0035] The second magnetic region 11B may contain at least one selected from the group consisting of Co and Fe. The second magnetic region 11B contains, for example, Co and Fe. For example, the second magnetic region 11B may contain, for example, Co ９０ Fe １０ It may include the following:

[0036] The first magnetic region 11A may contain, for example, at least one selected from the group consisting of Co and Fe. As will be described below, the first magnetic region 11A may include a plurality of portions with different compositions.

[0037] 5 is a schematic cross-sectional view illustrating the magnetic device according to the first embodiment. As shown in FIG. 5, in the magnetic device 102 according to the embodiment, the first magnetic region 11A includes a plurality of portions. The remaining configuration of the magnetic device 102 may be the same as that of the magnetic device 101.

[0038] In the magnetic device 102, the first magnetic region 11A includes a first magnetic portion 11a and a second magnetic portion 11b. The second magnetic portion 11b is provided between the first intermediate region 11C and the first magnetic portion 11a. The first magnetic portion 11a includes Co, Fe, and B. The second magnetic portion 11b includes Co. For example, the second magnetic portion 11b does not include Fe. Alternatively, the concentration of Fe in the second magnetic portion 11b is lower than the concentration of Fe in the first magnetic portion 11a. This configuration enables more stable magnetization switching.

[0039] 5, the thickness of the first magnetic portion 11a in the first direction D1 is defined as a first magnetic portion thickness t11a. In one example, the first magnetic portion thickness t11a is 0.3 nm or more and 4 nm or less.

[0040] 5, the thickness of the second magnetic portion 11b in the first direction D1 is defined as a second magnetic portion thickness t11b. In one example, the second magnetic portion thickness t11b is 0.3 nm or more and 3 nm or less.

[0041] 6 is a schematic cross-sectional view illustrating the magnetic device according to the first embodiment. As shown in FIG. 6, in the magnetic device 103 according to the embodiment, the second magnetic region 11B includes multiple portions. The remaining configuration of the magnetic device 103 may be the same as that of the magnetic device 101 or the magnetic device 102.

[0042] In the magnetic device 103, the second magnetic region 11B includes a third magnetic portion 11c and a fourth magnetic portion 11d. The fourth magnetic portion 11d is provided between the first conductive member 51 and the third magnetic portion 11c. The concentration of Fe in the fourth magnetic portion 11d is higher than the concentration of Fe in the third magnetic portion 11c. For example, the third magnetic portion 11c and the fourth magnetic portion 11d include Co and Fe. The concentration of Fe varies between the third magnetic portion 11c and the fourth magnetic portion 11d.

[0043] The low Fe concentration in the third magnetic portion 11c facilitates, for example, a face-centered crystal lattice, which facilitates good lattice matching between the third magnetic portion 11c and the first intermediate region 11C containing Ir. The high Fe concentration in the fourth magnetic portion 11d facilitates, for example, a small write threshold current Iw.

[0044] 7 is a schematic cross-sectional view illustrating the magnetic device according to the first embodiment. As shown in FIG. 7, in the magnetic device 104 according to the embodiment, the first element portion 11E includes a first intermediate layer 11D. The configuration of the magnetic device 104 other than this may be the same as the configuration of the magnetic device 101, the magnetic device 102, or the magnetic device 103.

[0045] In the first element unit 11E of the magnetic device 104, the first intermediate layer 11D is provided between the first conductive member 51 and the first magnetic layer 11. The first intermediate layer 11D is nonmagnetic.

[0046] For example, the first intermediate layer 11D includes at least one selected from the group consisting of a first material, a second material, and a third material. The first material includes at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, Ti, and Cu, and oxygen. The second material includes at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, and Ti, and nitrogen. The third material includes at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, and Ti. The first intermediate layer 11D including such materials enables more stable control of magnetization.

[0047] Fig. 8 is a graph illustrating the characteristics of the magnetic device. Fig. 8 illustrates the calculation results of the characteristics of the magnetic device 104. In Fig. 7, the horizontal axis represents the retention energy RE1. The vertical axis represents the write threshold current Iw. Fig. 8 also illustrates the characteristics of the magnetic device 101. Fig. 8 shows the characteristics of the magnetic devices 101 and 104 when the first element portion 11E has three different sizes.

[0048] 8, the magnetic device 104 provided with the first intermediate layer 11D has a larger retention energy RE1 than the magnetic device 101. The magnetic device 104 has a smaller write threshold current Iw than the magnetic device 101.

[0049] In the magnetic device 104, the first intermediate layer 11D is considered to function as a switching assist layer. The first intermediate layer 11D is considered to effectively transmit the action of spin from the first conductive member 51 to the first magnetic layer 11 without adverse effects, for example. For example, the first intermediate layer 11D is considered to stabilize the magnetization of the first magnetic layer 11.

[0050] In the magnetic device according to the embodiment, the first conductive member 51 includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au. The first conductive member 51 may include, for example, TaB. These materials can efficiently control the magnetization of the first magnetic layer 11. For example, the effect of spin orbit torque can be effectively obtained.

[0051] In the embodiment, stress may be applied to the first element unit 11E. As will be described later, stress can be applied to the magnetic layer included in the first element unit 11E by using a configuration such as a shallow insulating member. This makes it easier to control the magnetization of the magnetic layer. The stress causes distortion in the crystal lattice of the magnetic layer. The combination of a configuration including the first intermediate region 11C containing Ir and stress more significantly exhibits the above-mentioned effects obtained by Ir.

[0052] Below, several examples of the configuration for generating stress will be described. In the following description, the above configuration is applied to the first magnetic layer 11. In the following description, the first intermediate layer 11D may be applied.

[0053] Second Embodiment Fig. 9 is a schematic perspective view illustrating a magnetic device according to a second embodiment. Fig. 10 is a schematic plan view illustrating a magnetic device according to the second embodiment. Fig. 11 is a schematic cross-sectional view illustrating a magnetic device according to the second embodiment. Fig. 11 is a cross-sectional view taken along line A1-A2 in Fig. 10. As shown in Fig. 9, a magnetic device 110 according to the embodiment includes a first element portion 11E, a first conductive member 51, and a first insulating member 31.

[0054] The first element unit 11E includes a first magnetic layer 11, a second magnetic layer 12, and a first non-magnetic layer 11M. A first direction D1 from the first magnetic layer 11 to the second magnetic layer 12 is defined as the Z-axis direction. A direction perpendicular to the Z-axis direction is defined as the Y-axis direction. A direction perpendicular to the Z-axis direction and the Y-axis direction is defined as the X-axis direction.

[0055] The first nonmagnetic layer 11M is provided between the first magnetic layer 11 and the second magnetic layer 12 in the first direction D1.

[0056] The first conductive member 51 includes a first conductive portion 51 a, a second conductive portion 51 b, and a third conductive portion 51 c. A second direction D2 extending from the first conductive portion 51 a to the second conductive portion 51 b intersects with the first direction D1. The second direction D2 is, for example, the Y-axis direction. The first conductive member 51 has a stripe shape extending along the second direction D2.

[0057] The third conductive portion 51c is provided between the first conductive portion 51a and the second conductive portion 51b in the second direction D2. The first magnetic layer 11 is provided between the third conductive portion 51c and the second magnetic layer 12 in the first direction D1. The region overlapping with the first element unit 11E in the first direction D1 corresponds to the third conductive portion 51c.

[0058] The third conductive portion 51c is provided between a part of the first insulating member 31 and the first element portion 11E in the first direction D1. The first insulating member 31 includes a first insulating portion 31a and a second insulating portion 31b. The first insulating portion 31a and the second insulating portion 31b overlap with the first conductive member 51 in the first direction D1. The second insulating portion 31b is oriented between the first insulating portion 31a and the first conductive member 51 in the first direction D1. For example, the second insulating portion 31b is oriented between the first insulating portion 31a and the third conductive portion 51c in the first direction D1.

[0059] For example, the first insulating portion 31a is the lower portion. The second insulating portion 31b is provided on the first insulating portion 31a. The first conductive member 51 is provided on the second insulating portion 31b.

[0060] 9 and 11, the third direction D3 intersects with a plane including the first direction D1 and the second direction D2. The third direction D3 is, for example, the X-axis direction. The length of the first insulating portion 31a along the third direction D3 is defined as a first insulating portion width x31a. The length of the second insulating portion 31b along the third direction D3 is defined as a second insulating portion width x31b. In the embodiment, the first insulating portion width x31a is narrower than the second insulating portion width x31b. This configuration provides stable characteristics and stable operation.

[0061] 9, a control unit 70 may be provided. The control unit 70 may be included in the magnetic device 110. The control unit 70 may be provided separately from the magnetic device 110. The control unit 70 is capable of supplying a current i1 to the first conductive member 51. The current i1 has a direction from the first conductive portion 51a to the second conductive portion 51b, or a direction from the second conductive portion 51b to the first conductive portion 51a. The direction of the current i1 can be controlled by, for example, the control unit 70.

[0062] For example, the magnetization direction of the first magnetic layer 11 can be controlled by the current i1. The state of change in the magnetization of the first magnetic layer 11 differs depending on the direction of the current i1. The electrical resistance of the first element unit 11E changes depending on the change in the angle between the magnetization of the first magnetic layer 11 and the magnetization of the second magnetic layer 12. For example, the first magnetic layer 11 is a switching layer. The second magnetic layer 12 is, for example, a reference layer.

[0063] Meanwhile, the control unit 70 can apply a voltage V1 between the first conductive member 51 and the second magnetic layer 12. The voltage V1 changes the ease with which the magnetization of the first magnetic layer 11 changes. The electrical resistance of the first element unit 11E can be controlled by combining the voltage V1 and the current i1. For example, multiple first element units 11E may be provided on one first conductive member 51. For example, the voltage V1 can select at least one of the multiple first element units 11E, thereby controlling the electrical resistance.

[0064] In this way, the electrical resistance between the first conductive member 51 and the second magnetic layer 12 can be changed by the direction of the current i1 flowing through the first conductive member 51 and the voltage V1 applied between the first conductive member 51 and the second magnetic layer 12.

[0065] The magnetic device 110 can be used, for example, as a computing element, or as a memory.

[0066] As already explained, in the embodiment, the first insulating portion width x31a is narrower than the second insulating portion width x31b. It is believed that providing such a first insulating member 31 effectively applies anisotropic stress to the first element unit 11E. This controls the magnetization contained in the first element unit 11E (e.g., the magnetization of the first magnetic layer 11). For example, good retention characteristics are obtained. This results in stable characteristics and stable operation.

[0067] Generally, when attempting to obtain good retention characteristics, the write current tends to increase. Alternatively, when attempting to reduce the write current, the retention characteristics tend to decrease. In contrast, in the embodiment, anisotropic stress is generated by the shape of the first insulating member 31. By utilizing the anisotropic stress from the first insulating member 31, it is possible to reduce the write current while obtaining good retention characteristics.

[0068] As shown in FIG. 10 , the length of the first insulating portion 31a along the second direction D2 is defined as a first insulating portion length y31a. The first insulating portion length y31a is longer than the first insulating portion width x31a (see FIG. 11 ). The first insulating portion length y31a is, for example, the length of the stripe. When the first insulating portion length y31a is longer than the first insulating portion width x31a, anisotropic stress is generated. The anisotropic stress, for example, more effectively controls the magnetization of the first magnetic layer 11.

[0069] 9 and 11 , the length of the first conductive member 51 along the third direction D3 is defined as the first conductive member width x51. The first insulating portion width x31a is narrower than the first conductive member width x51. Anisotropic stress can be effectively obtained.

[0070] 10 , a first conductive member width x51 along the third direction D3 of the first conductive member 51 is shorter than a first conductive member length y51 along the second direction D2 of the first conductive member 51. The first conductive member 51 has a stripe shape extending along the second direction D2.

[0071] The first conductive member 51 includes at least one selected from the group consisting of, for example, Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au. This makes it easier to control the magnetization of the first magnetic layer 11 due to an effect based on the current i1 flowing through the first conductive member 51. The effect based on the current i1 may include, for example, spin orbit torque.

[0072] 10 , the length of the first element unit 11E along the third direction D3 is defined as a first element unit width x11. In the embodiment, the first element unit width x11 is narrower than the first conductive member width x51. This configuration makes it easier to control the magnetization of the first magnetic layer 11.

[0073] As shown in FIG. 10 , the length of the first element unit 11E along the second direction D2 is defined as the first element unit length y11. For example, the first element unit length y11 may be shorter than the first element unit width x11. For example, this makes it easier to control the magnetization of the first magnetic layer 11. It also makes it easier to arrange multiple first element units 11E at high density along the second direction D2. In the embodiment, the relationship between the first element unit length y11 and the first element unit width x11 may be arbitrary.

[0074] As shown in FIG. 11 , the magnetic device 110 may further include a second insulating member 32. The second insulating member 32 is omitted in FIGS. 9 and 10 . As shown in FIG. 11 , the second insulating member 32 includes a first insulating region 32a and a second insulating region 32b. The first element portion 11E is provided between the first insulating region 32a and the second insulating region 32b in the third direction D3. For example, the second Young's modulus of the second insulating member 32 is lower than the first Young's modulus of the first insulating member 31. This makes it easier for the anisotropic stress caused by the first insulating member 31 to be applied to the first element portion 11E more effectively.

[0075] The first insulating member 31 may include at least one selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide, while the second insulating member 32 may include a tetraethoxysilane (TEOS)-based film, a spin-on-glass (SOG) film, or a resin.

[0076] For example, the first insulating member 31 includes a first element and a second element. The first element includes at least one element selected from the group consisting of silicon and aluminum. The second element includes at least one element selected from the group consisting of oxygen and nitrogen. Meanwhile, the second insulating member 32 includes silicon, oxygen, and carbon. Alternatively, the second insulating member 32 may include a resin.

[0077] In the embodiment, the first conductive member thickness t51 (see FIG. 11 ) of the first conductive member 51 along the first direction D1 is preferably, for example, 2 nm or more and 15 nm or less. The first magnetic layer thickness t11 (see FIG. 11 ) of the first magnetic layer 11 along the first direction D1 is preferably, for example, 0.7 nm or more and 5 nm or less. The first nonmagnetic layer thickness t11M (see FIG. 11 ) of the first nonmagnetic layer 11M along the first direction D1 is preferably, for example, 0.8 nm or more and 2 nm or less. The second magnetic layer thickness t12 (see FIG. 11 ) of the second magnetic layer 12 along the first direction D1 is preferably, for example, 1 nm or more and 6 nm or less.

[0078] In the embodiment, the first nonmagnetic layer 11M is made of, for example, MgO, CaO, SrO, TiO, VO, NbO, and Al. ２ O ３ The first element portion 11E includes at least one selected from the group consisting of: The first element portion 11E is, for example, a TMR (Tunnel Magneto Resistance) element.

[0079] In the embodiment, the first magnetic layer 11 is made of, for example, Co ｘ Fe １－ｘ It is preferable that B is contained. The composition ratio x is preferably 0.1 or more and 0.6 or less. For example, it is easy to obtain good element characteristics. For example, it is easy to obtain large resistance change. For example, it is easy to obtain highly stable magnetization. It is easy to obtain a small write current. For example, it is easy to obtain these characteristics simultaneously. Co ｘ Fe １－ｘ The concentration of B (boron) in B is preferably, for example, 5 atm % or more and 30 atm % or less.

[0080] As will be described below, the second magnetic layer 12 may include multiple stacked films.

[0081] 12 is a schematic cross-sectional view illustrating a magnetic device according to the second embodiment. As shown in FIG. 12, in a magnetic device 111 according to the embodiment, the second magnetic layer 12 includes a plurality of magnetic films 12 m and a plurality of non-magnetic films 12 n. The remaining configuration of the magnetic device 111 may be the same as that of the magnetic device 110.

[0082] In the first direction D1, one of the plurality of magnetic films 12m is located between one of the plurality of non-magnetic films 12n and another of the plurality of non-magnetic films 12n. In the first direction D1, one of the plurality of non-magnetic films 12n is located between one of the plurality of magnetic films 12m and another of the plurality of magnetic films 12m. The second magnetic layer 12 has, for example, an SAF (synthetic anti-ferromagnetic) structure. More stable magnetic properties are easily obtained in the second magnetic layer 12.

[0083] The non-magnetic films 12n each include, for example, at least one selected from the group consisting of Ru and Ir. The non-magnetic film thickness t12n of one of the non-magnetic films 12n along the first direction D1 is preferably, for example, not less than 0.2 nm and not more than 2.0 nm.

[0084] The plurality of magnetic films 12m includes, for example, at least one selected from the group consisting of Fe and Co. The magnetic film thickness t12m of one of the plurality of magnetic films 12m along the first direction D1 is preferably, for example, not less than 0.2 nm and not more than 5.0 nm.

[0085] 12, the magnetic device 111 may include a conductive layer 26. The second magnetic layer 12 is located between the first non-magnetic layer 11M and the conductive layer 26. The conductive layer 26 includes, for example, at least one selected from the group consisting of Cu, Al, and Au. The conductive layer 26 is, for example, an electrode.

[0086] 12, the magnetic device 111 may include an intermediate conductive layer 25. The intermediate conductive layer 25 is located between the second magnetic layer 12 and the conductive layer 26. The intermediate conductive layer 25 includes, for example, at least one selected from the group consisting of Ti and Ta. The intermediate conductive layer 25 is, for example, along the cap. This makes it easier to obtain a stable second magnetic layer 12.

[0087] FIG. 13 is a micrograph illustrating a magnetic device according to the second embodiment. FIG. 13 is a high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) image of the magnetic device 111. As shown in FIG. 13, in the magnetic device 111, the first insulating member 31 includes a first insulating portion 31a and a second insulating portion 31b. The width of the first insulating portion 31a along the X-axis direction (x31a: see FIG. 11) is narrower than the width of the second insulating portion 31b along the X-axis direction (x31b: see FIG. 11). The width of the first insulating portion 31a along the X-axis direction is narrower than the width of the first conductive member 51 along the X-axis direction (x51: see FIG. 11). This configuration is obtained by over-etching the first insulating member 31 during processing.

[0088] As shown in FIG. 13, the width (x11: see FIG. 11) of the first element portion 11E along the X-axis direction may be narrower than the width of the first conductive member 51 along the X-axis direction.

[0089] 13, in the XZ cross section, the first conductive member 51 may be curved in a convex shape from the first insulating portion 31a toward the first element portion 11E. The first conductive member 51 may be deformed in response to stress.

[0090] For example, in the first sample corresponding to the magnetic device 111, the retention characteristic is 150 kJ / s. Ｂ T or more. This value corresponds to nonvolatility for 10 years or more. The write current threshold value of the first sample is less than 50 μA. On the other hand, in the second sample of the reference example, the width (x31a) of the first insulating portion 31a along the X-axis direction is the same as the width (x51) of the first conductive member 51 along the X-axis direction. In the second sample, the retention characteristic is 50 kJ / s. Ｂ T~80k Ｂ The write current threshold value in the second sample is greater than 50 μA, for example, 50 μA to 75 μA. In this way, the magnetic device according to the embodiment (such as the magnetic device 111) can achieve good retention characteristics and a small write current.

[0091] 14 is a schematic cross-sectional view illustrating a magnetic device according to the second embodiment. As shown in FIG. 14, a magnetic device 112 according to the embodiment further includes an intermediate insulating member 35. The remaining configuration of the magnetic device 112 may be the same as that of the magnetic device 110 or the magnetic device 111.

[0092] The intermediate insulating member 35 includes a first intermediate insulating portion 35a and a second intermediate insulating portion 35b. The first intermediate insulating portion 35a is provided between the first insulating region 32a and the first element portion 11E in the third direction D3. The second intermediate insulating portion 35b is provided between the first element portion 11E and the second insulating region 32b in the third direction D3. The Young's modulus of the intermediate insulating member 35 is higher than the second Young's modulus.

[0093] The intermediate insulating member 35 may include, for example, at least one selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide. The intermediate insulating member 35 may include, for example, at least one selected from the group consisting of silicon and aluminum, and at least one selected from the group consisting of oxygen and nitrogen. Meanwhile, the second insulating member 32 includes silicon, oxygen, and carbon. Alternatively, the second insulating member 32 may include a resin.

[0094] The intermediate insulating member 35 functions, for example, as a passivation film. A stable first element portion 11E is easily obtained. The first intermediate insulating portion thickness t35a of the first intermediate insulating portion 35a along the third direction D3 is preferably, for example, 1 nm or more and 5 nm or less. The second intermediate insulating portion thickness t35b of the second intermediate insulating portion 35b along the third direction D3 is preferably, for example, 1 nm or more and 5 nm or less. Excellent protective characteristics are obtained. The stress due to the first insulating member 31 is applied to the first element portion 11E without being impaired.

[0095] 15 is a schematic cross-sectional view illustrating a magnetic device according to the second embodiment. As shown in FIG. 15, the magnetic device 113 according to the embodiment further includes a third insulating member 33. The remaining configuration of the magnetic device 113 may be the same as that of the magnetic device 110, the magnetic device 111, or the magnetic device 112.

[0096] In the magnetic device 113, the first element portion 11E is provided in the first direction D1 between the third conductive portion 51c and at least a part of the third insulating member 33. The third Young's modulus of the third insulating member 33 is lower than the first Young's modulus of the first insulating member 31. The third insulating member 33 may include a TEOS-based film, an SOG film, a resin, or the like.

[0097] A first conductive layer 61 may be provided in the magnetic device 113. The first conductive layer 61 is, for example, a wiring. A third insulating member 33 with a low Young's modulus is provided between the first element unit 11E and the first conductive layer 61. By providing the third insulating member 33 with a low Young's modulus, stress caused by the first conductive layer 61 is less likely to be applied to the first element unit 11E. The desired anisotropic stress is effectively applied to the first magnetic layer 11. Even when the first conductive layer 61 is provided, stable characteristics can be maintained. Stable operation can be obtained.

[0098] 16 is a schematic cross-sectional view illustrating a magnetic device according to the second embodiment. As shown in FIG. 16, a magnetic device 114 according to the embodiment further includes a fourth insulating member 34. The remaining configuration of the magnetic device 114 may be similar to that of the magnetic device 113.

[0099] 16 , the first insulating portion 31a is provided between at least a part of the fourth insulating member 34 and the first conductive member 51 in the first direction D1. The fourth Young's modulus of the fourth insulating member 34 is lower than the first Young's modulus of the first insulating member 31. The fourth insulating member 34 may include a TEOS-based film, an SOG film, a resin, or the like.

[0100] A second conductive layer 62 may be provided in the magnetic device 114. The second conductive layer 62 may be, for example, a wiring. The fourth insulating member 34 is provided between the second conductive layer 62 and the first insulating member 31. By providing the fourth insulating member 34 with a low Young's modulus, stress caused by the second conductive layer 62 is alleviated.

[0101] Third Embodiment FIG. 17 is a schematic cross-sectional view illustrating a magnetic device according to a third embodiment. As shown in FIG. 17 , a magnetic device 120 according to the embodiment also includes a first element unit 11E, a first conductive member 51, and a first insulating member 31. In the magnetic device 120, the first element unit 11E also includes a first magnetic layer 11, a second magnetic layer 12, and a first nonmagnetic layer (see FIG. 9 ). The first conductive member 51 includes a first conductive portion 51a, a second conductive portion 51b, and a third conductive portion 51c. The first insulating member 31 includes the first insulating portion 31a. The third conductive portion 51c is provided between a portion of the first insulating portion 31a and the first element unit 11E in the first direction D1. In the magnetic device 120, the configurations of the first element unit 11E and the first conductive member 51 may be similar to those of the magnetic device 110 or the magnetic device 111.

[0102] A third conductive portion 51c is provided between the first insulating portion 31a and the first magnetic layer 11 in the first direction D1. A first insulating portion width x31a of the first insulating portion 31a along the third direction D3 is narrower than a first conductive member width x51 of the first conductive member 51 along the third direction D3. The third direction D3 intersects with a plane including the first direction D1 and the second direction D2. In the magnetic device 120, too, anisotropic stress in the first insulating member 31 and the first conductive member 51 is effectively applied to the first magnetic layer 11. Good retention characteristics can be obtained. The write current can be reduced. Stable characteristics can be obtained. Stable operation can be obtained.

[0103] As shown in FIG. 17, in the magnetic device 120, the first element portion width x11 of the first element portion 11E along the third direction D3 may also be narrower than the first conductive member width x51 (see FIG. 10).

[0104] The magnetic device 120 may further include a second insulating member 32. The second insulating member 32 includes a first insulating region 32a and a second insulating region 32b. The first element portion 11E is provided between the first insulating region 32a and the second insulating region 32b in the third direction D3. The second Young's modulus of the second insulating member 32 is lower than the first Young's modulus of the first insulating member 31. In the magnetic device 120, the materials of the second insulating member 32 and the first insulating member 31 may be the same as those described in relation to the second embodiment.

[0105] 17 , the magnetic device 120 may further include an intermediate insulating member 35. The intermediate insulating member 35 may include a first intermediate insulating portion 35a and a second intermediate insulating portion 35b. The first intermediate insulating portion 35a is provided between the first insulating region 32a and the first element portion 11E in the third direction D3. The second intermediate insulating portion 35b is provided between the first element portion 11E and the second insulating region 32b in the third direction D3. The Young's modulus of the intermediate insulating member 35 is higher than the second Young's modulus. The material of the intermediate insulating member 35 may be the same as the material of the intermediate insulating member 35 described in relation to the second embodiment.

[0106] The magnetic device 120 may further include a third insulating member 33 (see FIG. 15 ). The first element portion 11E is provided between the third conductive portion 51c and at least a part of the third insulating member 33 in the first direction D1. The third Young's modulus of the third insulating member 33 is lower than the first Young's modulus of the first insulating member 31. The material of the third insulating member 33 may be the same as the material of the third insulating member 33 described in relation to the second embodiment.

[0107] The magnetic device 120 may further include a fourth insulating member 34 (see FIG. 16 ). The first insulating portion 31 a is provided between at least a portion of the fourth insulating member 34 and the first conductive member 51 in the first direction D1. The fourth Young's modulus of the fourth insulating member 34 is lower than the first Young's modulus of the first insulating member 31.

[0108] In the magnetic device 120, the first magnetic layer 11 is made of Co ｘ Fe １－ｘ It may contain B. The composition ratio x is 0.1 or more and 0.6 or less.

[0109] 18 is a schematic cross-sectional view illustrating a magnetic device according to a fourth embodiment. As shown in Fig. 18, a magnetic device 130 according to the embodiment includes a first element portion 11E, a first conductive member 51, a first insulating member 31, and a third insulating member 33. The configurations of the first element portion 11E and the first conductive member 51 in the magnetic device 130 may be similar to those in the magnetic device 110, etc.

[0110] In the magnetic device 130, the first conductive member 51 includes a first conductive portion 51 a, a second conductive portion 51 b, and a third conductive portion 51 c. The first insulating member 31 includes the first insulating portion 31 a. The third conductive portion 51 c is provided between the first insulating portion 31 a and the first element portion 11E in the first direction D1.

[0111] For example, in the magnetic device 130, the length of the first insulating portion 31a along the second direction D2 (first insulating portion length y31a) is longer than the length of the first insulating portion 31a along the third direction D3 (first insulating portion width x31a) (see FIG. 11 ). The first insulating portion 31a is, for example, a stripe. The first insulating portion 31a has a stripe shape extending along the second direction D2. The anisotropic planar shape of the first insulating portion 31a generates anisotropic stress. The anisotropic stress, for example, more effectively controls the magnetization of the first magnetic layer 11.

[0112] In the magnetic device 130, the third conductive portion 51c is provided in the first direction D1 between a part of the first insulating member 31 and the first element unit 11E. In the magnetic device 130, the first element unit 11E is provided in the first direction D1 between the third conductive portion 51c and at least a part of the third insulating member 33. The third Young's modulus of the third insulating member 33 is lower than the first Young's modulus of the first insulating member 31.

[0113] By providing the third insulating member 33 with a low Young's modulus, stress caused by other members (such as the first conductive layer 61) is alleviated. This allows the anisotropic stress from the first insulating member 31 to be effectively applied to the first magnetic layer 11. Good retention characteristics can also be obtained in the magnetic device 130. The write current can be reduced. Stable characteristics can be obtained. Stable operation can be obtained.

[0114] 19 is a schematic cross-sectional view illustrating a magnetic device according to the fourth embodiment. As shown in FIG. 19, a magnetic device 131 according to the embodiment includes a first element portion 11E, a first conductive member 51, a first insulating member 31, and a third insulating member 33. In the magnetic device 131, the position of the third insulating member 33 is different from the position of the third insulating member 33 in the magnetic device 130. Other than this, the configuration of the magnetic device 131 may be similar to the configuration of the magnetic device 130.

[0115] In the magnetic device 131, the first insulating member 31 is provided between at least a portion of the third insulating member 33 and the first conductive member 51 in the first direction D1. The third Young's modulus of the third insulating member 33 is lower than the first Young's modulus of the first insulating member 31. By providing the third insulating member 33 with a low Young's modulus, stress caused by other members (such as the second conductive layer 62) is alleviated. This allows the anisotropic stress caused by the first insulating member 31 to be effectively applied to the first magnetic layer 11. The magnetic device 131 also provides good retention characteristics. The write current can be reduced. Stable characteristics are obtained. Stable operation is obtained.

[0116] In the magnetic device 130 and the magnetic device 131, the first insulating member 31 may include at least one selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide, while the third insulating member 33 may include a TEOS-based film, a SOG (Spin On Glass) film, or a resin.

[0117] For example, the first insulating member 31 includes a first element and a second element. The first element includes at least one element selected from the group consisting of silicon and aluminum. The second element includes at least one element selected from the group consisting of oxygen and nitrogen. Meanwhile, the third insulating member 33 includes silicon, oxygen, and carbon. Alternatively, the third insulating member 33 may include a resin.

[0118] A second insulating member 32 may be provided in the magnetic device 130 and the magnetic device 131. An intermediate insulating member 35 may be provided in the magnetic device 130 and the magnetic device 131.

[0119] The embodiments may include the following technical proposals: (Technical proposal 1) A magnetic device comprising: a first conductive member; and a first element unit, wherein the first element unit includes a first magnetic layer, a second magnetic layer, and a first non-magnetic layer, wherein the first magnetic layer is provided between the first conductive member and the second magnetic layer, and the first non-magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction from the first magnetic layer to the second magnetic layer, and the first magnetic layer includes: a first magnetic region provided between the first conductive member and the first non-magnetic layer, a second magnetic region provided between the first conductive member and the first magnetic region, and a first intermediate region provided between the second magnetic region and the first magnetic region and including Ir.

[0120] (Technical Solution 2) The magnetic device according to Technical Solution 1, wherein the thickness of the first intermediate region in the first direction is 0.3 nm or more and 0.7 nm or less, or 0.02 nm or more and less than 0.3 nm, or more than 0.7 nm and 5 nm or less.

[0121] (Technical Solution 3) The magnetic device according to Technical Solution 1, wherein the first magnetic region and the second magnetic region are antiparallel coupled.

[0122] (Technical Solution 4) The magnetic device according to Technical Solution 1, wherein the first magnetic region and the second magnetic region are coupled in parallel.

[0123] (Technical proposal 5) A magnetic device described in Technical proposal 1 or 2, wherein the first magnetic region includes a first magnetic portion and a second magnetic portion provided between the first intermediate region and the first magnetic portion, the first magnetic portion including Co, Fe, and B, the second magnetic portion including Co, and the second magnetic portion does not include Fe, or the concentration of Fe in the second magnetic portion is lower than the concentration of Fe in the first magnetic portion.

[0124] (Technical proposal 6) A magnetic device described in any one of Technical proposals 1 to 5, wherein the second magnetic layer includes: a third magnetic portion; and a fourth magnetic portion provided between the first conductive member and the third magnetic portion; and the concentration of Fe in the fourth magnetic portion is higher than the concentration of Fe in the third magnetic portion.

[0125] (Technical Proposal 7) A magnetic device described in any one of Technical Proposals 1 to 6, wherein the first element portion further includes a non-magnetic first intermediate layer provided between the first conductive member and the first magnetic layer, the first intermediate layer including at least one selected from the group consisting of a first material, a second material, and a third material, the first material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, Ti, and Cu, and oxygen, the second material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, and Ti, and nitrogen, and the third material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, and Ti.

[0126] (Technical proposal 8) The magnetic device according to any one of Technical proposals 1 to 7, wherein the first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

[0127] (Technical Proposal 9) A magnetic device according to any one of Technical Proposals 1 to 8, further comprising a first insulating member, wherein the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion, a second direction from the first conductive portion to the second conductive portion intersects the first direction, the third conductive portion is provided between the first conductive portion and the second conductive portion in the second direction, the first magnetic layer is provided between the third conductive portion and the second magnetic layer in the first direction, the third conductive portion is provided between a part of the first insulating member and the first element portion in the first direction, the first insulating member includes a first insulating portion and a second insulating portion, and the second insulating portion is provided between the first insulating portion and the first conductive member in the first direction, a first insulating portion width of the first insulating portion along the third direction is narrower than a second insulating portion width of the second insulating portion along the third direction, and the third direction intersects a plane including the first direction and the second direction.

[0128] (Technical Solution 10) The magnetic device according to Technical Solution 9, wherein a first insulating portion length along the second direction of the first insulating portion is longer than a first insulating portion width.

[0129] (Technical Solution 11) The magnetic device according to Technical Solution 9, wherein the first insulating portion width is narrower than the first conductive member width along the third direction of the first conductive member.

[0130] (Technical Solution 12) The magnetic device according to Technical Solution 11, wherein the width of the first element portion along the third direction is narrower than the width of the first conductive member.

[0131] (Technical proposal 13) A magnetic device described in any one of Technical proposals 9 to 11, wherein the width of the first element portion along the third direction of the first element portion is longer than the length of the first element portion along the second direction of the first element portion.

[0132] (Technical proposal 14) A magnetic device described in any one of Technical proposals 9 to 13, further comprising a second insulating member, wherein the second insulating member includes a first insulating region and a second insulating region, the first element portion is provided between the first insulating region and the second insulating region in the third direction, and the second Young's modulus of the second insulating member is lower than the first Young's modulus of the first insulating member.

[0133] (Technical proposal 15) A magnetic device described in any one of Technical proposals 9 to 13, further comprising a second insulating member, wherein the second insulating member includes a first insulating region and a second insulating region, the first element portion is provided between the first insulating region and the second insulating region in the third direction, the first insulating member includes a first element and a second element, the first element includes at least one selected from the group consisting of silicon and aluminum, and the second element includes at least one selected from the group consisting of oxygen and nitrogen, and the second insulating member includes silicon, oxygen, and carbon, or the second insulating member includes a resin.

[0134] (Technical proposal 16) A magnetic device as described in Technical proposal 14, further comprising an intermediate insulating member, wherein the intermediate insulating member includes a first intermediate insulating portion and a second intermediate insulating portion, wherein the first intermediate insulating portion is provided between the first insulating region and the first element portion in the third direction, and wherein the second intermediate insulating portion is provided between the first element portion and the second insulating region in the third direction, and wherein the Young's modulus of the intermediate insulating member is higher than the second Young's modulus.

[0135] (Technical proposal 17) A magnetic device described in any one of Technical proposals 9 to 13, further comprising a third insulating member, wherein the first element portion is arranged between the third conductive portion and at least a portion of the third insulating member in the first direction, and wherein the third Young's modulus of the third insulating member is lower than the first Young's modulus of the first insulating member.

[0136] (Technical Solution 18) The magnetic device according to any one of Technical Solutions 9 to 13, further comprising a fourth insulating member, wherein the first insulating portion is provided between at least a part of the fourth insulating member and the first conductive member in the first direction, and a fourth Young's modulus of the fourth insulating member is lower than a first Young's modulus of the first insulating member. (Technical Solution 19) The first magnetic layer is made of Co ｘ Fe １－ｘ The magnetic device according to any one of technical proposals 1 to 17, comprising B, wherein x is 0.1 or more and 0.6 or less.

[0137] (Technical Proposal 20) A magnetic device described in any one of Technical Proposals 1 to 8, further comprising a first insulating member, wherein the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion, a second direction from the first conductive portion to the second conductive portion intersects the first direction, the third conductive portion is provided between the first conductive portion and the second conductive portion in the second direction, the first magnetic layer is provided between the third conductive portion and the second magnetic layer in the first direction, the first insulating member includes a first insulating portion, and the third conductive portion is provided between a part of the first insulating portion and the first element portion in the first direction, the third conductive portion is provided between the first insulating portion and the first magnetic layer in the first direction, a first insulating portion width of the first insulating portion along the third direction is narrower than a first conductive member width of the first conductive member along the third direction, and the third direction intersects a plane including the first direction and the second direction.

[0138] (Technical Solution 21) The magnetic device according to Technical Solution 20, wherein the width of the first element portion along the third direction is narrower than the width of the first conductive member.

[0139] (Technical proposal 22) A magnetic device described in Technical proposal 20 or 21, further comprising a second insulating member, wherein the second insulating member includes a first insulating region and a second insulating region, the first element portion is arranged between the first insulating region and the second insulating region in the third direction, and the second Young's modulus of the second insulating member is lower than the first Young's modulus of the first insulating member.

[0140] (Technical proposal 23) A magnetic device as described in Technical proposal 22, further comprising an intermediate insulating member, wherein the intermediate insulating member includes a first intermediate insulating portion and a second intermediate insulating portion, wherein the first intermediate insulating portion is provided between the first insulating region and the first element portion in the third direction, and wherein the second intermediate insulating portion is provided between the first element portion and the second insulating region in the third direction, and wherein the Young's modulus of the intermediate insulating member is higher than the second Young's modulus.

[0141] (Technical proposal 24) A magnetic device described in Technical proposal 20 or 21, further comprising a third insulating member, wherein the first element portion is arranged between the third conductive portion and at least a portion of the third insulating member in the first direction, and the third Young's modulus of the third insulating member is lower than the first Young's modulus of the first insulating member.

[0142] (Technical proposal 25) A magnetic device described in Technical proposal 20 or 21, further comprising a fourth insulating member, wherein the first insulating portion is arranged between at least a portion of the fourth insulating member and the first conductive member in the first direction, and wherein the fourth Young's modulus of the fourth insulating member is lower than the first Young's modulus of the first insulating member.

[0143] (Technical Solution 26) The first magnetic layer is made of Co ｘ Fe １－ｘ The magnetic device according to any one of technical proposals 20 to 25, comprising B, wherein x is 0.1 or more and 0.6 or less.

[0144] (Technical Proposal 27) A magnetic device described in any one of Technical Proposals 1 to 8, further comprising a first insulating member and a third insulating member, wherein the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion, a second direction from the first conductive portion to the second conductive portion intersects with the first direction, the third conductive portion is provided between the first conductive portion and the second conductive portion in the second direction, the first magnetic layer is provided between the third conductive portion and the second magnetic layer in the first direction, the first insulating member includes a first insulating portion, and the third conductive portion is provided between the first insulating portion and the first element portion in the first direction, the first element portion is provided between the third conductive portion and at least a portion of the third insulating member in the first direction, or the first insulating member is provided between at least a portion of the third insulating member and the first conductive member in the first direction, and a third Young's modulus of the third insulating member is lower than the first Young's modulus of the first insulating member.

[0145] According to the embodiment, it is possible to provide a magnetic device that can improve characteristics.

[0146] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element included in the magnetic device, such as the element portion, magnetic layer, non-magnetic member, magnetic member, intermediate layer, intermediate member, conductive member, and insulating member, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0147] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0148] In addition, all magnetic devices that can be implemented by a person skilled in the art by appropriately modifying the design based on the magnetic device described above as an embodiment of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0149] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0150] 11, 12: first and second magnetic layers, 11A, 11B: first and second magnetic regions, 11C: first intermediate region, 11D: first intermediate layer, 11E: first element portion, 11M: first non-magnetic layer, 11a to 11d: first to fourth magnetic portions, 12m: magnetic film, 12n: non-magnetic film, 25: intermediate conductive layer, 26: conductive layer, 31 to 34: first to fourth insulating members, 31a, 31b: first and second insulating portions, 32a, 32b: first and second insulating regions, 35: intermediate insulating member, 35a, 35b: first and second intermediate insulating portions, 51: first conductive member, 51a to 51c: first to third conductive portions, 61, 62: first and second conductive layers, 70: control portion, 101 to 114, 109a, 109b, 110 to 114, 120, 130, 131: magnetic devices, D1 to D3: first to third directions, Iw: write threshold current, RE1: retention energy, V1: voltage, i1: current, t11, t12: first and second magnetic layer thicknesses, t11A, t11B: first and second magnetic region thicknesses, t11C: first intermediate region thickness, t11M: first non-magnetic layer thickness, t11a, t11b: first and second magnetic portion thicknesses, t12m: magnetic film thickness, t12n: non-magnetic film thickness, t35a, t35b: first and second intermediate insulating portion thicknesses, t51: first conductive member thickness, x11: first element portion width, x31a, x31b: first and second insulating portion widths, x51: width of first conductive member, y11: length of first element, y31a: length of first insulating portion, y51: length of first conductive member

Claims

1. A semiconductor device comprising a first conductive member, a first element unit, and a first insulating member, wherein the first element unit includes a first magnetic layer, a second magnetic layer, and a first non-magnetic layer, wherein the first magnetic layer is provided between the first conductive member and the second magnetic layer, and the first non-magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction from the first magnetic layer to the second magnetic layer, and the first magnetic layer includes: a first magnetic region provided between the first conductive member and the first non-magnetic layer, a second magnetic region provided between the first conductive member and the first magnetic region, and a first intermediate region including Ir provided between the second magnetic region and the first magnetic region, wherein the first magnetic region and the second magnetic region are anti-parallel coupled, and the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion, and a second direction from the first conductive portion to the second conductive portion intersects with the first direction, a first insulating portion and a second insulating portion, the second insulating portion being disposed between the first conductive portion and the second conductive portion in the second direction; the first magnetic layer being disposed between the third conductive portion and the second magnetic layer in the first direction; the third conductive portion being disposed between a portion of the first insulating member and the first element portion in the first direction; the first insulating member includes a first insulating portion and a second insulating portion; the second insulating portion being disposed between the first insulating portion and the first conductive member in the first direction; a first insulating portion width of the first insulating portion along the third direction is narrower than a second insulating portion width of the second insulating portion along the third direction; and the third direction intersects a plane including the first direction and the second direction.

2. The magnetic device of claim 1, wherein the first magnetic region includes a first magnetic portion and a second magnetic portion provided between the first intermediate region and the first magnetic portion, the first magnetic portion includes Co, Fe and B, the second magnetic portion includes Co, and the second magnetic portion does not include Fe, or the concentration of Fe in the second magnetic portion is lower than the concentration of Fe in the first magnetic portion.

3. The magnetic device described in claim 1, wherein the second magnetic layer includes a third magnetic portion and a fourth magnetic portion provided between the first conductive member and the third magnetic portion, and the concentration of Fe in the fourth magnetic portion is higher than the concentration of Fe in the third magnetic portion.

4. The magnetic device of claim 1, wherein the first element portion further includes a non-magnetic first intermediate layer provided between the first conductive member and the first magnetic layer, the first intermediate layer including at least one selected from the group consisting of a first material, a second material and a third material, the first material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, Ti and Cu, and oxygen, the second material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir and Ti, and nitrogen, and the third material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir and Ti.

5. The magnetic device of claim 1, wherein the first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

6. A semiconductor device comprising a first conductive member, a first element unit, and a first insulating member, wherein the first element unit includes a first magnetic layer, a second magnetic layer, and a first non-magnetic layer, wherein the first magnetic layer is provided between the first conductive member and the second magnetic layer, and the first non-magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction from the first magnetic layer to the second magnetic layer, and the first magnetic layer includes: a first magnetic region provided between the first conductive member and the first non-magnetic layer, a second magnetic region provided between the first conductive member and the first magnetic region, and a first intermediate region including Ir provided between the second magnetic region and the first magnetic region, wherein the first magnetic region and the second magnetic region are anti-parallel coupled, and the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion, and a second direction from the first conductive portion to the second conductive portion intersects with the first direction, a first insulating portion and a second insulating portion, the second insulating portion being disposed between the first conductive portion and the second conductive portion in the second direction; the first magnetic layer being disposed between the third conductive portion and the second magnetic layer in the first direction; the third conductive portion being disposed between a portion of the first insulating member and the first element portion in the first direction; the first insulating member includes a first insulating portion and a second insulating portion; the second insulating portion being disposed between the first insulating portion and the first conductive member in the first direction; a first insulating portion length of the first insulating portion along the second direction is longer than a first insulating portion width of the first insulating portion along a third direction; and the third direction intersects a plane including the first direction and the second direction.

7. The magnetic device described in claim 6, wherein the first magnetic region includes a first magnetic portion and a second magnetic portion provided between the first intermediate region and the first magnetic portion, the first magnetic portion includes Co, Fe and B, the second magnetic portion includes Co, and the second magnetic portion does not include Fe, or the concentration of Fe in the second magnetic portion is lower than the concentration of Fe in the first magnetic portion.

8. The magnetic device described in claim 6, wherein the second magnetic layer includes a third magnetic portion and a fourth magnetic portion provided between the first conductive member and the third magnetic portion, and the concentration of Fe in the fourth magnetic portion is higher than the concentration of Fe in the third magnetic portion.

9. The magnetic device of claim 6, wherein the first element portion further includes a non-magnetic first intermediate layer provided between the first conductive member and the first magnetic layer, the first intermediate layer including at least one selected from the group consisting of a first material, a second material, and a third material, the first material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, Ti, and Cu, and oxygen, the second material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, and Ti, and nitrogen, and the third material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, and Ti.

10. The magnetic device of claim 6, wherein the first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

11. A semiconductor device comprising a first conductive member, a first element portion, a first insulating member, and a second insulating member, wherein the first element portion includes a first magnetic layer, a second magnetic layer, and a first non-magnetic layer, wherein the first magnetic layer is provided between the first conductive member and the second magnetic layer, and the first non-magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction from the first magnetic layer to the second magnetic layer, and the first magnetic layer includes: a first magnetic region provided between the first conductive member and the first non-magnetic layer, a second magnetic region provided between the first conductive member and the first magnetic region, and a first intermediate region including Ir provided between the second magnetic region and the first magnetic region, wherein the first magnetic region and the second magnetic region are anti-parallel coupled, and the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion, a second direction from the first conductive portion to the second conductive portion intersects the first direction; the third conductive portion is provided between the first conductive portion and the second conductive portion in the second direction; the first magnetic layer is provided between the third conductive portion and the second magnetic layer in the first direction; the third conductive portion is provided between a portion of the first insulating member and the first element portion in the first direction; the second insulating member includes a first insulating region and a second insulating region; the first element portion is provided between the first insulating region and the second insulating region in a third direction; a second Young's modulus of the second insulating member is lower than the first Young's modulus of the first insulating member; and the third direction intersects a plane including the first direction and the second direction.

12. The magnetic device described in claim 11, wherein the first magnetic region includes a first magnetic portion and a second magnetic portion provided between the first intermediate region and the first magnetic portion, the first magnetic portion includes Co, Fe and B, the second magnetic portion includes Co, and the second magnetic portion does not include Fe, or the concentration of Fe in the second magnetic portion is lower than the concentration of Fe in the first magnetic portion.

13. The magnetic device described in claim 11, wherein the second magnetic layer includes a third magnetic portion and a fourth magnetic portion provided between the first conductive member and the third magnetic portion, and the concentration of Fe in the fourth magnetic portion is higher than the concentration of Fe in the third magnetic portion.

14. The magnetic device of claim 11, wherein the first element portion further includes a non-magnetic first intermediate layer provided between the first conductive member and the first magnetic layer, the first intermediate layer including at least one selected from the group consisting of a first material, a second material, and a third material, the first material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, Ti, and Cu, and oxygen, the second material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, and Ti, and nitrogen, and the third material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, and Ti.

15. The magnetic device of claim 11, wherein the first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

16. A semiconductor device comprising: a first conductive member; a first element portion; and a first insulating member, wherein the first element portion includes a first magnetic layer, a second magnetic layer, and a first non-magnetic layer, wherein the first magnetic layer is provided between the first conductive member and the second magnetic layer, and the first non-magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction from the first magnetic layer to the second magnetic layer, and the first magnetic layer includes: a first magnetic region provided between the first conductive member and the first non-magnetic layer, a second magnetic region provided between the first conductive member and the first magnetic region, and a first intermediate region including Ir provided between the second magnetic region and the first magnetic region, wherein the first magnetic region and the second magnetic region are coupled in parallel, and the first conductive member includes a first conductive portion, a second conductive portion, and a third conductive portion, and a second direction from the first conductive portion to the second conductive portion intersects with the first direction, a first insulating portion and a second insulating portion, the second insulating portion being disposed between the first conductive portion and the second conductive portion in the second direction; the first magnetic layer being disposed between the third conductive portion and the second magnetic layer in the first direction; the third conductive portion being disposed between a portion of the first insulating member and the first element portion in the first direction; the first insulating member includes a first insulating portion and a second insulating portion; the second insulating portion being disposed between the first insulating portion and the first conductive member in the first direction; a first insulating portion width of the first insulating portion along the third direction is narrower than a second insulating portion width of the second insulating portion along the third direction; and the third direction intersects a plane including the first direction and the second direction.

17. The magnetic device described in claim 16, wherein the first magnetic region includes a first magnetic portion and a second magnetic portion provided between the first intermediate region and the first magnetic portion, the first magnetic portion includes Co, Fe and B, the second magnetic portion includes Co, and the second magnetic portion does not include Fe, or the concentration of Fe in the second magnetic portion is lower than the concentration of Fe in the first magnetic portion.

18. The magnetic device described in claim 16, wherein the second magnetic layer includes a third magnetic portion and a fourth magnetic portion provided between the first conductive member and the third magnetic portion, and the concentration of Fe in the fourth magnetic portion is higher than the concentration of Fe in the third magnetic portion.

19. The magnetic device of claim 16, wherein the first element portion further includes a non-magnetic first intermediate layer provided between the first conductive member and the first magnetic layer, the first intermediate layer including at least one selected from the group consisting of a first material, a second material, and a third material, the first material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, Ti, and Cu, and oxygen, the second material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, and Ti, and nitrogen, and the third material including at least one selected from the group consisting of Ta, Hf, Gd, Pt, Mg, Ir, and Ti.

20. The magnetic device of claim 16, wherein the first conductive member includes at least one selected from the group consisting of Ta, W, Pt, Hf, Re, Os, Ir, Pd, Cu, Ag, and Au.

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