EUV pellicle mounting block having stress buffering structure, EUV pellicle structure including mounting block, EUV exposure apparatus having EUV pellicle structure, and pellicle mounting and demounting method

Abstract

An embodiment of the present invention relates to a mounting block having a stress buffering structure, an EUV pellicle structure including the mounting block, an EUV exposure apparatus including the EUV pellicle structure, and an EUV pellicle mounting and demounting method. The mounting block having a stress buffering structure according to an embodiment may include: a mounting frame disposed in a first direction; a stress absorbing body extending from the mounting frame in a second direction perpendicular to the first direction; and a stress absorbing through-hole penetrating from an upper portion to a lower portion of the stress absorbing body.

Description

A mounting block of an EUV pellicle having a stress buffer structure, an EUV pellicle structure including the mounting block, an EUV exposure device including the EUV pellicle structure, and a method for mounting and demounting an EUV pellicle

[0001] The embodiments relate to a mounting block of an EUV pellicle having a buffer structure, an EUV pellicle structure including the mounting block, an EUV exposure apparatus including the EUV pellicle structure, and a method for mounting and demounting an EUV pellicle.

[0002] For example, the embodiment may include a mounting block for an EUV pellicle having a mechanical stress buffering structure. The embodiment may also include a mounting block for an EUV pellicle having a thermal stress buffering structure. The embodiment may also include a mounting block for an EUV pellicle having a thermomechanical stress buffering structure.

[0003] The pellicle of the embodiment can be applied to, but is not limited to, an extreme ultraviolet (EUV) exposure process.

[0004] In the manufacture of semiconductor devices or liquid crystal displays, a photolithography process is used to pattern semiconductor wafers or liquid crystal substrates.

[0005] In photolithography, a reticle or photomask is used as the patterning substrate, and the pattern on the reticle is transferred to a semiconductor wafer or liquid crystal display substrate. However, if particles adhere to the reticle, these particles can absorb or reflect light, damaging the transferred pattern and potentially reducing the quality or yield of semiconductor devices or liquid crystal displays. Therefore, a pellicle is used to prevent particles from adhering to the reticle surface.

[0006] When using a pellicle, the particles are not attached directly to the reticle surface but are attached on the pellicle, so during lithography, the focus is aligned with the mask pattern, and the particles on the pellicle are not out of focus and are therefore not transferred to the semiconductor wafer or liquid crystal substrate.

[0007] Meanwhile, the resolution of semiconductor exposure equipment is increasing, and the wavelength of the light source is becoming shorter to achieve that resolution.

[0008] For example, UV (Ultra Violet) light sources used include G-line (436 nm), I-line (365 nm), KrF excimer laser (248 nm), and ArF excimer laser (193 nm), but recently, extreme ultraviolet (EUV, 13.5 nm) is being used due to the demand for patterning processes below 10 nm.

[0009] In other words, semiconductor devices and liquid crystal displays are becoming increasingly highly integrated and miniaturized. For example, the existing technique of forming fine patterns of approximately 32 nm on a photoresist film can be addressed by improved techniques using excimer lasers, such as immersion exposure technology, which exposes the photoresist film using an ArF excimer laser (193 nm), or multiple exposure.

[0010] However, next-generation semiconductor devices and liquid crystal displays demand ever-more-fine pattern formation, making it increasingly difficult to form these fine patterns using conventional pellicle and exposure techniques. Recently, EUV exposure technology, which utilizes EUV light with a wavelength of 13.5 nm, has been attracting attention as a method for forming even finer patterns.

[0011] To implement this exposure technology using EUV, development of new light sources, photoresists, reticles, and pellicles is required.

[0012]

[0013] Meanwhile, due to the high wavelength energy of EUV, the transmittance of the pellicle membrane decreases to a level requiring replacement in about a week, making periodic replacement inevitable.

[0014] However, in the internal technology, the pellicle frame is bonded to the reticle, which is a mask substrate, using a fixing material such as an adhesive or a pressure-sensitive adhesive.

[0015] Accordingly, when attempting to demount a pellicle from a reticle for membrane replacement, the pellicle frame is strongly secured to the reticle with adhesive or glue. This causes problems with pellicle membrane fracture during the demounting process.

[0016]

[0017] Meanwhile, the strength of the pellicle frame and the membrane border are key factors in demounting. However, materials with the strength to withstand the mechanical stress applied during demounting in pellicle frames and membrane borders with very thin thicknesses (approximately 1 mm or less) are limited. Furthermore, materials with such strength face a technical contradiction: their high coefficient of thermal expansion (CTE) leads to the Pellicle Induced Distortion (PID) problem, which will be described later.

[0018]

[0019] For example, in pellicle technology, the materials of the pellicle frame and the mask substrate that are in contact with each other are different, or the materials of the pellicle frame and the pellicle membrane are different, which causes a PID (Pellicle Induced Distortion) problem due to a difference in thermal characteristics.

[0020] Specifically, as semiconductor devices and liquid crystal displays become increasingly miniaturized, thermal stress occurs due to differences in the coefficient of thermal expansion (CTE) when attaching a pellicle to a photomask and performing the exposure process. This thermal stress causes photomask deformation, a phenomenon known as photomask indentation (PID). As a result of PID, pattern positioning accuracy deteriorates, making it difficult to form fine patterns and potentially damaging expensive mask substrates.

[0021] One of the technical challenges of the embodiment is to provide a method for preventing PID (Pellicle Induced Distortion) by not only minimizing the 'mechanical stress' applied to the pellicle frame and membrane border during the demounting step of the pellicle, but also buffering or reducing the 'thermal stress' caused by the difference in coefficient of thermal expansion (CTE) of the pellicle frame, mask substrate, and pellicle membrane during the exposure process.

[0022] For example, the embodiment seeks to provide a method for demounting a pellicle without damaging the pellicle membrane by minimizing the mechanical stress applied to a thin pellicle frame and a membrane border in a pellicle demounting step.

[0023] In addition, the embodiment seeks to provide a method for preventing PID from occurring due to thermal stress caused by a difference in coefficient of thermal expansion (CTE) between a pellicle frame and a mask substrate that are in contact with each other, or between a pellicle frame and a pellicle membrane.

[0024] The technical problems of the embodiment are not limited to those described in this article, but include those that can be understood from the description of the invention.

[0025] The mounting block (40) of the EUV pellicle according to the embodiment may include a mounting frame (420) arranged in a first direction (X), a stress-absorbing body (410) extending from the mounting frame (420) in a second direction (Y) perpendicular to the first direction (X), and a stress-absorbing through hole (T) penetrating from the upper part to the lower part of the stress-absorbing body (410).

[0026] The above stress-absorbing through hole (T) may include a first stress-absorbing through hole (T1) extending in the first direction (X) and arranged in the stress-absorbing body (410).

[0027] The above stress-absorbing through hole (T) includes a second stress-absorbing through hole (T2) extending from one end of the first stress-absorbing through hole (T1) in a second direction (Y) perpendicular to the first direction (X), and

[0028] It may include a third stress-absorbing through hole (T3) extending in the second direction (Y) from the other end of the first stress-absorbing through hole (T1).

[0029] The above mounting frame (420) may include a first guide portion (R1) on its upper surface.

[0030] The mounting block of the EUV pellicle of the embodiment may further include a mounting spacer (430) extending in a negative (-) direction in a third direction (Z) perpendicular to the first direction and the second direction from the stress absorbing body (410).

[0031] The above mounting spacer (430) may include an adhesive receiving groove.

[0032] The mounting block of the EUV pellicle of the embodiment may further include a mounting groove (H) disposed on the upper portion of the stress absorbing body (410).

[0033] The above mounting groove (H) can overlap the receiving groove of the above mounting spacer (430) from above and below.

[0034] The above mounting spacer (430) can protrude from the lower side of the stress absorbing body (410).

[0035] The mounting block of the EUV pellicle of the embodiment may further include a single or multiple jig guide portions (R2) arranged on the lower side of the stress absorbing body (410).

[0036] The above jig guide part (R2) can be placed in an opposite direction to the mounting frame (420).

[0037] The mounting block (402) of the EUV pellicle of the second embodiment may further include a mounting connection frame (422) connecting the stress absorbing body (410).

[0038] Additionally, the mounting block (403) of the EUV pellicle of the third embodiment may include a single or multiple demounting slots (410S) on the side of the stress absorbing body (410).

[0039] The above demounting slot (410S) can be positioned in an opposite direction to the mounting frame (420).

[0040]

[0041] The EUV pellicle structure (2000) according to the embodiment may be an EUV pellicle structure that fixes a pellicle frame on a reticle by any one of the mounting blocks (400, 402, 403).

[0042] Additionally, the EUV pellicle structure (2000) according to the embodiment may include a first adhesive disposed between a mounting frame (420) provided in any one of the mounting blocks (400, 402, 403) and the pellicle frame.

[0043] Additionally, the EUV pellicle structure (2000) according to the embodiment may include a second adhesive disposed between the mounting block and the reticle.

[0044] The mounting block of the above EUV pellicle may include a mounting spacer (430) that protrudes and extends downward from the stress absorbing body (410).

[0045] The second adhesive may be placed between the mounting spacer (430) and the reticle.

[0046]

[0047] Additionally, the EUV exposure apparatus according to the embodiment may include a reticle and one of the EUV pellicle structures (2000) that fixes the reticle and the pellicle.

[0048]

[0049] In addition, a method for mounting and demounting an EUV pellicle according to an embodiment may include a mounting step of fixing one of the EUV pellicle structures (2000) on a reticle, a step of heating the stress-absorbing body (410), a step of lifting the stress-absorbing body (410) with a demounting jig, and a step of performing demounting by horizontally moving the demounting jig.

[0050] The step of lifting the stress-absorbing body (410) may include a step of lifting the stress-absorbing body (410) by inserting the demounting jig (JIG) into the jig guide part (R2) provided in the stress-absorbing body (410).

[0051] In addition, the step of lifting the stress-absorbing body (410) may include a step of lifting the stress-absorbing body (410) by inserting the demounting jig (JIG) into the demounting slot (410S) provided in the stress-absorbing body (410).

[0052] In the step of lifting the stress absorbing body (410), the stress absorbing body (410) can be elastically deformed.

[0053] In the step of lifting the stress absorbing body (410), the stress absorbing body (410) can be plastically deformed.

[0054] The step of heating the stress-absorbing body (410) may include a step of heating the stress-absorbing body by inserting a heating device into a mounting groove (H) provided in the stress-absorbing body (410).

[0055]

[0056] In addition, the method for mounting and demounting an EUV pellicle according to the second embodiment may include a mounting step of fixing one of the EUV pellicle structures (2000) on a reticle, a step of heating the stress-absorbing body (410), and a step of performing demounting by inserting a jig pin into a mounting groove (H) provided in the stress-absorbing body (410).

[0057] The step of performing the above demounting may include a step of moving the jig pin inserted into the mounting groove (H) left and right within the mounting groove (H), and a step of performing the demounting while the jig pin is horizontal.

[0058] The embodiment has a mounting block (400, 402, 403, 404, 405) of an EUV pellicle having a stress buffering structure, thereby having a composite technical effect of buffering or reducing 'mechanical stress' applied to a pellicle frame and a membrane border during a pellicle demounting step and 'thermal stress' caused by a difference in coefficient of thermal expansion (CTE) during an exposure process.

[0059] First, the mounting block of the embodiment may include a stress-absorbing through hole (T) that penetrates from the top to the bottom of the stress-absorbing body (410). Accordingly, there is a special technical effect of preventing mechanical stress generated when lifting the stress-absorbing body (410) with a demounting jig (JIG, 800) from being transmitted to the pellicle frame (200) and the membrane border (305), thereby enabling the pellicle (1000) to be demounted without damaging the pellicle membrane (310).

[0060] In addition, according to the embodiment, since the mounting block includes a stress-absorbing through hole (T), when the stress-absorbing body (410) is lifted by a demounting jig (JIG), it can be lifted through elastic deformation or plastic deformation along the stress-absorbing through hole (T). Accordingly, there is a technical effect of being able to absorb or block mechanical stress by the stress-absorbing through hole (T).

[0061]

[0062] Next, according to an embodiment, since the mounting block includes a stress-absorbing through hole (T), heat from the adhesive heating step for demounting can be blocked from being transmitted to the pellicle frame (200) or the membrane border (305). Accordingly, the embodiment has a special technical effect of protecting the pellicle membrane from heat.

[0063]

[0064] Next, according to an embodiment, there is a technical effect that can prevent PID (Pellicle Induced Distortion) from occurring due to a difference in coefficient of thermal expansion (CTE) between a pellicle frame and a mask substrate that are in contact with each other or a difference in coefficient of thermal expansion (CTE) between a pellicle frame and a pellicle membrane.

[0065] For example, the embodiment can block thermal stress due to a difference in coefficient of thermal expansion (CTE) between the pellicle frame and the reticle by a stress-absorbing through hole (T) of the mounting block. Accordingly, there is a special technical effect of protecting the pellicle membrane from thermal stress by preventing thermal stress from being transmitted to the pellicle frame (200) or the membrane border (305).

[0066] In addition, according to the embodiment, thermal stress due to the difference in coefficient of thermal expansion (CTE) between the pellicle frame and the pellicle membrane can be blocked by the stress-absorbing through hole (T). Accordingly, there is a special technical effect of preventing PID (Pellicle Induced Distortion) from occurring because the thermal stress is not transmitted to the reticle (100).

[0067]

[0068] Next, according to the embodiment, there is a technical effect in which the pressure difference between the inside and outside of the pellicle can be eliminated as a gap (S) is created between the pellicle frame (200) and the reticle (100) by the mounting block.

[0069]

[0070] Fig. 1 is a perspective view of an EUV pellicle structure (2000) according to an embodiment.

[0071] FIG. 2 is an enlarged perspective view of a first mounting block (400) having a stress buffer structure according to the embodiment illustrated in FIG. 1.

[0072] FIG. 3a is a bottom perspective view of the EUV pellicle structure (2000) illustrated in FIG. 1.

[0073] Figure 3b is a detailed perspective view of the EUV pellicle structure illustrated in Figure 3a.

[0074] FIG. 4a is a cross-sectional view of the EUV pellicle structure (2000) along the line AA' shown in FIG. 1.

[0075] FIG. 4b is a detailed cross-sectional view of the EUV pellicle structure (2000) illustrated in FIG. 4a.

[0076] FIGS. 5A to 5C are reference drawings for explaining the mounting step and demounting step of an EUV pellicle structure (2000) according to an embodiment.

[0077] Figures 6a and 6b are examples of stress applied to the mounting block (400R) of the comparative example and the pellicle frame (200R) of the comparative example, respectively, during demounting.

[0078] Figures 7a and 7b are examples of stress applied to the mounting block (400E) of the embodiment and the pellicle frame (200E) of the embodiment during demounting.

[0079] FIG. 8 is an exploded perspective view of an EUV pellicle structure (2000) including a second mounting block (402) having a stress buffer structure.

[0080] Figure 9 is a perspective view of a third mounting block (403) having a stress buffer structure.

[0081] Fig. 10 is a cross-sectional view of an EUV pellicle structure (2002) according to the second embodiment.

[0082] Fig. 11 is a cross-sectional view of an EUV pellicle structure (2003) according to the third embodiment.

[0083] Hereinafter, a concretely feasible embodiment for solving the above-mentioned problem will be described with reference to the attached drawings.

[0084] In the description of the embodiments, when it is described as being formed "above or below" each component, it includes both the two components being in direct contact with each other or one or more other components being positioned between the two components. In addition, when it is expressed as "above or below," it can include the meaning of not only the upward direction but also the downward direction based on one component.

[0085]

[0086] FIG. 1 is a perspective view of an EUV pellicle structure (2000) according to an embodiment.

[0087] An EUV pellicle structure (2000) according to an embodiment may include a mounting block (400) having a stress buffer structure, and a pellicle (1000) fixed on a reticle (100) by the mounting block (400) having the thermomechanical stress buffer structure.

[0088] The mounting block (400) having a stress buffering structure of the embodiment may have a mechanical stress buffering structure. The embodiment may also include a mounting block of an EUV pellicle having a thermal stress buffering structure. The embodiment may also include a mounting block having a thermo-mechanical stress buffering structure.

[0089] The above pellicle (1000) may include a pellicle frame (200) and a pellicle membrane (300). The pellicle membrane (300) may include a membrane border (305) and a pellicle membrane (310). The pellicle frame (200) forms the border of the pellicle (1000) and may include a square frame shape, but is not limited thereto.

[0090]

[0091] In the embodiment, 'thermo-mechanical stress' is a concept that includes ① 'thermal stress' generated by the difference in coefficient of thermal expansion (CTE) during the exposure process and ② 'mechanical stress' applied to the pellicle frame and membrane border during the mounting or demounting step of the pellicle.

[0092] The 'first mounting block (400) having a 'thermo-mechanical stress buffering structure' of the embodiment can perform a composite function of buffering or reducing 'thermal stress' due to a difference in coefficient of thermal expansion (CTE) in the exposure process and 'mechanical stress' applied to the pellicle frame and membrane border during the mounting or demounting step of the pellicle, which will be described in detail later.

[0093] The 'mounting block having a thermo-mechanical stress buffering structure' of the embodiment may be abbreviated as 'mounting block'.

[0094]

[0095] The above reticle (100) may have a mask pattern formed on a predetermined mask substrate. The 13.5 nm wavelength extreme ultraviolet (EUV) exposure device to which the embodiment is applied may be a reflective type in which the light source does not transmit through the reticle (100).

[0096] For example, in an EUV exposure device to which the embodiment is applied, a predetermined exposure light source (not shown) may be injected into and reflected by a reticle (100), and a predetermined multi-layer mirror may be provided on a mask substrate, but is not limited thereto.

[0097] The pellicle (1000) according to the embodiment can be applied to EUV exposure equipment that uses EUV as a light source. EUV exposure equipment can implement finer integrated circuits than DUV (Deep Ultra Violet) exposure equipment. The EUV wavelength is 13.5 nm, which is shorter than DUV, and the shorter wavelength reduces the diffraction phenomenon of light. Therefore, EUV exposure equipment can pattern finer integrated circuits on semiconductor wafers. For example, EUV exposure equipment can be applied to the leading-edge process (7 nm or less) of non-memory semiconductors or the DRAM process.

[0098]

[0099] Next, FIG. 2 is an enlarged perspective view of a first mounting block (400) having a stress buffer structure illustrated in FIG. 1.

[0100] FIG. 3a is a bottom perspective view of the EUV pellicle structure (2000) illustrated in FIG. 1, and FIG. 3b is a detailed perspective view of the EUV pellicle structure illustrated in FIG. 3a.

[0101] FIG. 4a is a cross-sectional view of the EUV pellicle structure (2000) along the line AA' illustrated in FIG. 1, and FIG. 4b is a detailed cross-sectional view of the EUV pellicle structure (2000) illustrated in FIG. 4a.

[0102]

[0103] Hereinafter, with reference to FIGS. 2 to 4b, an EUV pellicle structure (2000) including a first mounting block (400) will be described in detail.

[0104]

[0105] First, referring to FIG. 2, the first mounting block (400) according to the embodiment may include a mounting frame (420) and a stress absorbing body (410).

[0106] For example, the first mounting block (400) may include a mounting frame (420) arranged in a first direction (X) and a stress absorbing body (410) extending from the mounting frame (420) in a second direction (Y) perpendicular to the first direction (X).

[0107] The above mounting frame (420) may have a first guide portion (R1) on its upper surface.

[0108] Also, referring to FIGS. 3a and 3b, the first mounting block (400) may include a mounting spacer (430) extending in a negative (-) direction of a third direction (Z) perpendicular to the first and second directions (XY).

[0109]

[0110] The first mounting block (400) may include a metal material. For example, the first mounting block (400) may include, but is not limited to, Ti, Al, or an alloy thereof.

[0111] The above mounting frame (420), the stress-absorbing body (410), and the mounting spacer (430) may be formed integrally, but are not limited thereto. For example, the first mounting block (400) may be formed by a plastic working process, but is not limited thereto. For example, the first mounting block (400) may be formed by a predetermined casting process or extrusion process.

[0112]

[0113] Continuing with reference to FIGS. 3A and 3B, the mounting spacer (430) has a predetermined receiving groove, and a second adhesive (520) is placed in the receiving groove to fix the first mounting block (400) and the reticle (100).

[0114] For example, referring to FIG. 3b, the mounting spacer (430) may include a first spacer frame (431) that protrudes downward from the stress absorbing body (410) and has a first receiving groove (430H1). The first spacer frame (431) may include a cylindrical shape, but is not limited thereto.

[0115] In addition, the mounting spacer (430) may include a second spacer frame (432) that protrudes downward from the stress absorbing body (410) and is positioned inside the first spacer frame (431). The second spacer frame (432) may include a cylindrical shape, but is not limited thereto.

[0116] The above first receiving groove (430H1) may be a space between the first spacing frame (431) and the second spacing frame (432), but is not limited thereto.

[0117] Additionally, the second spacer frame (432) of the above-described mounting spacer (430) may include a second receiving groove (430H2) at its bottom. For example, the second spacer frame (432) may include a second receiving groove (430H2) that is finned inward at the center of its bottom.

[0118] The depth of the second receiving groove (430H2) may be lower than the depth of the first receiving groove (430H1), but is not limited thereto.

[0119]

[0120] Referring to FIGS. 4a and 4b, a second adhesive (520) can be placed on the mounting spacer (430) to fix the first mounting block (400) and the reticle (100).

[0121] For example, the second adhesive (520) can be placed on the second separation frame (432) of the mounting separation member (430) to fix the first mounting block (400) and the reticle (100).

[0122] According to an embodiment, the lower height of the first separation frame (431) may be higher than the lower height of the second separation frame (432).

[0123] That is, the first separation frame (431) can be closer to the reticle (100) than the second separation frame (432).

[0124] Accordingly, according to the embodiment, a receiving space in which the second adhesive (520) can be stably positioned can be provided by the first separation frame (431) and the second separation frame (432).

[0125] In addition, the embodiment has a first receiving groove (430H1) which is a space between the first spacer frame (431) and the second spacer frame (432), thereby preventing the second adhesive (520) from extending beyond the outside of the mounting spacer member (430).

[0126] In addition, the embodiment can have a support function in which the second separation frame (432) includes a second receiving groove (430H2) on its bottom so that the second adhesive (520) can be stably fixed.

[0127] Continuing with reference to FIGS. 4a and 4b, a first adhesive (510) may be placed on the first guide portion (R1) on the mounting frame (420), and the first mounting block (400) and the pellicle frame (200) may be fixed by the first adhesive (510).

[0128]

[0129] Referring again to FIGS. 2 and 3a, the first mounting block (400) may include a stress-absorbing through hole (T) that penetrates from the top to the bottom of the stress-absorbing body (410).

[0130] The above stress-absorbing through hole (T) may be in the shape of the letter ‘ㄷ’ as shown in FIG. 2 and FIG. 3a, but is not limited thereto.

[0131] For example, the stress-absorbing through hole (T) may include a first stress-absorbing through hole (T1) extending in a first direction (X), and a second stress-absorbing through hole (T2) and / or a third stress-absorbing through hole (T3) extending from the first stress-absorbing through hole (T1) in a second direction (Y) perpendicular to the first direction (X).

[0132] For example, the stress-absorbing through hole (T) may include a second stress-absorbing through hole (T2) extending from one end of the first stress-absorbing through hole (T1) in a second direction (Y) perpendicular to the first direction (X). In addition, the stress-absorbing through hole (T) may include a third stress-absorbing through hole (T3) extending from the other end of the first stress-absorbing through hole (T1) in the second direction (Y).

[0133]

[0134] First, the first mounting block (400) according to the embodiment may include a stress-absorbing through hole (T) penetrating from the top to the bottom of the stress-absorbing body (410). Accordingly, as described later, mechanical stress generated during the mounting or demounting step of the pellicle can be prevented from being transmitted to the pellicle frame (200) and the membrane border (305), and there is a special technical effect of being able to mount or demount the pellicle (1000) without damaging the pellicle membrane (310).

[0135]

[0136] Also, referring to FIGS. 4a and 4b, there is a special technical effect in which thermal stress due to a difference in coefficient of thermal expansion (CTE) between the pellicle frame and the reticle during the exposure process is blocked by the stress-absorbing through hole (T) so as not to be transmitted to the pellicle frame (200) or the membrane border (305), thereby protecting the pellicle membrane from thermal stress.

[0137] In addition, according to the embodiment, thermal stress due to the difference in coefficient of thermal expansion (CTE) between the pellicle frame and the pellicle membrane can be blocked by the stress-absorbing through hole (T). Accordingly, there is a special technical effect of preventing PID (Pellicle Induced Distortion) from occurring because the thermal stress is not transmitted to the reticle (100).

[0138]

[0139] Next, referring to FIGS. 2 and 3a, the first mounting block (400) may include a mounting groove (H) disposed on the upper portion of the stress absorbing body (410).

[0140] The above mounting home (H) can overlap the mounting spacer (430) between the upper and lower parts.

[0141] Additionally, the above mounting groove (H) can overlap the receiving groove of the above mounting spacer (430) from above and below.

[0142] Additionally, the above mounting home (H) can overlap the second adhesive (520) disposed on the above mounting spacer (430) between the upper and lower portions.

[0143] According to an embodiment, in the 'mounting step', there is a technical effect that the bond between the second adhesive (520) and the reticle (100) can be strengthened by applying pressure to the mounting groove (H) of the stress-absorbing body (410) with a press device (600) (see FIG. 5a).

[0144] The first mounting block (400) according to the embodiment may include a stress-absorbing through hole (T) penetrating from the top to the bottom of the stress-absorbing body (410). Accordingly, the embodiment can prevent mechanical stress generated by pressing the mounting groove (H) of the stress-absorbing body (410) with a press device (600) from being transmitted to the pellicle frame (200) and the membrane border (305), and has a technical effect of being able to mount the pellicle (1000) without damaging the pellicle membrane (310).

[0145] In addition, according to the embodiment, there is a composite technical effect in which demounting can be easily performed by inserting a predetermined heating device (700) (see FIG. 5b) into the mounting groove (H) of the stress absorbing body (410) in the 'demounting step' to heat the first mounting block (400) and the second adhesive (520).

[0146]

[0147] Continuing with reference to FIGS. 2 and 3a, the first mounting block (400) may include a single or multiple jig guide portions (R2) arranged on the lower side of the stress absorbing body (410).

[0148] The above jig guide part (R2) can provide a jig space for demounting, as can be seen in the demounting step described later.

[0149] In addition, since the above jig guide portion (R2) area is an empty space area where a significant portion of the stress absorbing body (410) is removed or absent, there is an effect that a stress absorbing through hole (T) can be formed accurately and efficiently.

[0150]

[0151] Next, referring to FIG. 4a, the first thickness of the mounting frame (420) in the first mounting block (400) may be thinner than the second thickness of the stress absorbing body (410).

[0152] Additionally, in the first mounting block (400), the mounting spacer (430) may protrude in the downward direction of the stress absorbing body (410).

[0153] According to an embodiment, as the mounting spacer (430) protrudes downward from the stress absorbing body (410), a space (S) may be created between the pellicle frame (200) and the reticle (100) by the mounting spacer (430) at a first distance (D1). At this time, the height of the space (S) may be controlled by the thickness of the mounting spacer (430). The first distance (D1) may be smaller than the size of the external particle.

[0154] According to an embodiment, there is a composite technical effect in which the pressure difference between the inside and outside of the pellicle can be eliminated by creating a gap (S) between the pellicle frame (200) and the reticle (100) by the first mounting block (400) that fixes the pellicle to the reticle.

[0155] Next, FIGS. 5a to 5c are reference drawings for explaining the mounting step and demounting step of the EUV pellicle structure (2000) according to the embodiment.

[0156] In addition, FIGS. 6a and 6b are examples of stress applied to the mounting block (400R) of the comparative example and the pellicle frame (200R) of the comparative example during demounting, respectively, and FIGS. 7a and 7b are examples of stress applied to the mounting block (400E) of the embodiment and the pellicle frame (200E) of the embodiment during demounting.

[0157] Referring to FIGS. 2 to 7b below, a first mounting and demounting method of an EUV pellicle structure (2000) according to an embodiment will be described.

[0158] First, the mounting step of fixing the EUV pellicle structure (2000) on the reticle (100) will be described with reference to FIG. 5a.

[0159] The 'mounting step' of the embodiment has a technical effect in that the mounting is performed by applying pressure to the mounting groove (H) of the first mounting block (400) by the press device (600), thereby making the bond between the second adhesive (520) and the reticle (100) stronger.

[0160] For example, the press device (600) may include a press pin (610), a press frame (620), a press portion (630), an elastic portion (600S), and a press cover (640).

[0161] For example, when the press pin (610) of the press part (630) is inserted into the mounting groove (H) of the first mounting block (400), the press part (630) can press along the pressing frame (620) to transmit a first load (P1) in the downward direction (-Z) to the press pin (610). For example, the embodiment can transmit the first load (P1) to the press pin (610) by an elastic member (600S), for example, a spring, disposed between the press pin (610) and the press part (630).

[0162] The pressure of the above press unit (630) may be applied by mechanical pressure such as hydraulic pressure or a stepper motor, but is not limited thereto.

[0163] Next, a method of demounting the EUV pellicle structure (2000) from the reticle (100) will be described with reference to FIGS. 5b to 5c.

[0164] Referring to FIG. 5b, the 'demounting step' of the embodiment can heat the first mounting block (400) by inserting a heating device (700) into the mounting groove (H) of the stress-absorbing body (410). At this time, the second adhesive (520) is also heated to a predetermined phase transition temperature (Tg) or higher, so that the bonding force between the first mounting block (400) and the reticle (100) is lowered, thereby providing a technical effect that demounting can be easily performed. The heating device (700) may be, but is not limited to, heating using a hot wire or an ultrasonic device.

[0165] Additionally, in the embodiment, the material of the first mounting block (400) may be a material having a higher thermal conductivity than the pellicle frame (200) or the membrane border (305). Accordingly, the stress-absorbing body (410) may be quickly heated during the heating step, and the heated heat may not be transferred to the pellicle frame (200) or the membrane border (305).

[0166] In addition, according to the embodiment, there is a special technical effect in that the heat for heating the adhesive is blocked by the stress-absorbing through hole (T) and is not transmitted to the pellicle frame (200) or membrane border (305), thereby protecting the pellicle membrane from heat.

[0167]

[0168] Next, FIG. 5c is an exemplary diagram of a step of demounting an EUV pellicle structure (2000) using a demounting jig (800). For convenience of explanation, the EUV pellicle structure (2000) in FIG. 5c is shown in a 180° inverted state, with the bottom surface of the pellicle frame (200) and the bottom surface of the first mounting block (400) facing upward, and the pellicle membrane (300) is omitted.

[0169] Referring to FIG. 5c, the first mounting block (400) according to the embodiment can perform demounting of the EUV pellicle structure (2000) by the lever principle.

[0170] For example, by inserting a demounting jig (JIG) (800) into the jig guide portion (R2) of each first mounting block (400), a second load (P2) can be applied in an upward direction (+Z) with respect to the reticle (100) and in a downward direction (+Z) with respect to FIG. 5c, thereby lifting the stress-absorbing body (410). At this time, the second adhesive (520) can be separated from the reticle (100) from the inside.

[0171] When lifting the first mounting block (400) with the above-mentioned demounting jig (800), the first mounting block (400) may be elastically deformed or plastically deformed, but is not limited thereto.

[0172] According to an embodiment, the first mounting block (400) includes a stress-absorbing through hole (T) that penetrates from the top to the bottom of the stress-absorbing body (410). Accordingly, the mechanical stress generated when lifting the stress-absorbing body (410) with the demounting jig (800) can be prevented from being transmitted to the pellicle frame (200) and the membrane border (305), and ultimately, there is a special technical effect of being able to demount the pellicle (1000) without damaging the pellicle membrane (310).

[0173]

[0174] For example, FIGS. 6A and 6B are examples of stress experiments applied to the mounting block (400R) of the comparative example and the pellicle frame (200R) of the comparative example during demounting, respectively. The mounting block (400R) of the comparative example is the only one that does not have the stress-absorbing through hole (T) in the mounting block (400E) of the embodiment, and the mounting block (400R) of the comparative example is not a known technology but merely a non-disclosed internal technology.

[0175] Next, FIGS. 7a and 7b are exemplary diagrams of a stress experiment applied to the mounting block (400E) of the embodiment and the pellicle frame (200E) of the embodiment during demounting. The mounting block (400E) of the embodiment may be the first mounting block (400) described above, but is not limited thereto and may include the second, third, fourth, and fifth mounting blocks (402, 403, 404, 405) described later.

[0176]

[0177] Table 1 below shows the stress data applied to the mounting block and pellicle frame during demounting in the comparative example and the embodiment, respectively.

[0178] Model Comparison Example Mounting Block 20 Mpa 37 Mpa Pellicle Frame 1.2 Mpa 0.2 Mpa

[0179]

[0180] First, referring to Fig. 6a, when the pellicle structure equipped with the mounting block (400R) of the comparative example is demounted, a stress of about 20 MPa is applied to the mounting block (400R) of the comparative example, and referring to Fig. 6b, a stress of about 1.2 MPa is applied to the pellicle frame (200R) of the comparative example. Since the mounting block (400R) of the comparative example is not equipped with a stress buffer structure, a considerable stress is transferred to the pellicle frame.

[0181] In particular, referring to Fig. 6b, the pellicle frame (200R_B) of the comparative example before stress is applied is in a flat state.

[0182] On the other hand, the pellicle frame (200R_A) of the comparative example is in a state where significant deformation has occurred after stress is applied for demounting the pellicle structure equipped with the mounting block (400R) of the comparative example.

[0183] Due to this, in the case of the comparative example, a relatively low stress of about 20 MPa was applied to the mounting block (400R) of the comparative example compared to the embodiment, but a high stress of about 1.2 MPa was applied to the pellicle frame (200R) of the comparative example, and accordingly, deformation of the pellicle frame (200R) of the comparative example occurred, resulting in a problem of damage to the pellicle membrane.

[0184]

[0185] On the other hand, referring to FIG. 7a, when the pellicle structure equipped with the mounting block (400E) of the embodiment is demounted, a high stress of about 37 MPa is applied to the mounting block (400E) of the embodiment compared to the comparative example, so that the demounting can be performed efficiently. In addition, referring to FIG. 7b, only a very low stress of about 0.2 MPa is applied to the pellicle frame (200E) of the embodiment, which means that only a very low stress of about 1 / 6 of that of the comparative example is transferred to the pellicle frame (200E).

[0186] Accordingly, referring to FIG. 7B, the pellicle frame (200E_B) of the embodiment before stress is applied is in a flat state. In addition, the pellicle frame (200E_A) of the embodiment after stress is applied for demounting the pellicle structure equipped with the mounting block (400E) of the embodiment is in a state in which almost no deformation occurs compared to the comparative example.

[0187] Accordingly, according to an embodiment, the first mounting block (400) may include a stress-absorbing through hole (T) in the stress-absorbing body (410), and accordingly, when the stress-absorbing body (410) is lifted with a demounting jig (800), it can be lifted efficiently by elastic deformation or plastic deformation while generating less mechanical stress along the line of the first stress-absorbing through hole (T1). Accordingly, there is a technical effect of absorbing or blocking mechanical stress.

[0188]

[0189] Next, the demounting jig (800) is moved horizontally at a height at which the first mounting block (400) is lifted, and demounting can be performed by applying force to the front while in a horizontal state.

[0190]

[0191] Also, referring to FIGS. 5A and 5B, a second method of mounting and demounting a UV pellicle structure (2000) according to another embodiment will be described.

[0192] First, as with the first method, the 'mounting step' of the second method can be performed by pressing the press device (600) into the mounting groove (H) of the first mounting block (400).

[0193] Next, as shown in Fig. 5b, a heating device (700) can be inserted into the mounting groove (H) of the stress absorbing body (410) to heat the first mounting block (400) and the second adhesive (520).

[0194] Next, a jig pin (not shown) is inserted into the mounting groove (H) of the stress absorbing body (410), and the jig pin moves left and right within the mounting groove (H), and force is applied to the front while in a horizontal state, so that demounting can proceed.

[0195]

[0196] Next, FIG. 8 is an exploded perspective view of an EUV pellicle structure (2000) including a second mounting block (402).

[0197] The second mounting block (402) can adopt the technical features of the first mounting block (400), and the following description will focus on the features of the second mounting block (402).

[0198] The second mounting block (402) may include a mounting connection frame (422) extending in the first direction (X) and a stress-absorbing body (410) disposed on one or both sides of the mounting connection frame (422). The second mounting block (402) may include a mounting spacer (430) on the lower side of the stress-absorbing body (410) like the first mounting block (400).

[0199] The area of ​​the mounting connection frame (422) in contact with the stress absorbing body (410) in the second mounting block (402) may function as the mounting frame (420) of the first mounting block (400) described above, but is not limited thereto.

[0200] The above mounting connection frame (422) and the stress-absorbing body (410) may be formed integrally, but are not limited thereto. A first adhesive (510) may be placed on the above mounting connection frame (422).

[0201] The second mounting block (402) may also be formed of a metal material such as Ti, Al, or an alloy thereof. In addition, the second mounting block (402) may be formed by a plastic working process, but is not limited thereto, and may be formed by a predetermined casting process or extrusion process.

[0202] The above second mounting block (402) has a technical effect of improving mechanical strength by having the above mounting connection frame (422).

[0203] In addition, the second mounting block (402) can improve the fixing force of the pellicle by expanding the bonding fixing area by having the mounting connection frame (422).

[0204] In addition, the second mounting block (402) has a technical effect of preventing mechanical damage to the pellicle frame and pellicle border by applying a distributed force to the pellicle frame during the demounting process by having the mounting connection frame (422).

[0205]

[0206] Next, Fig. 9 is a perspective view of the third mounting block (403).

[0207] The third mounting block (403) may adopt the technical features of the first mounting block (400) or the second mounting block (402), and the main features of the third mounting block (403) will be described below.

[0208] The third mounting block (403) may include a mounting frame (420) arranged in a first direction (X) and a stress-absorbing body (410) arranged to extend in a second direction (Y) perpendicular to the first direction (X). The third mounting block (403) may further include a mounting spacer (430) on the lower side of the stress-absorbing body (410) like the first mounting block (400).

[0209] A first adhesive (510) may be placed on the above mounting frame (420), and a second adhesive (520) may be placed on the above mounting spacer (430).

[0210] The above mounting frame (420) and the stress absorbing body (410) may be formed integrally, and the third mounting block (403) may be formed of a metal material such as Ti, Al, or an alloy thereof, but is not limited thereto.

[0211]

[0212] The third mounting block (403) may include a single or multiple demounting slots (410S) on the side of the stress absorbing body (410).

[0213] In an embodiment, the material of the third mounting block (403) may be a material having a higher thermal conductivity than the pellicle frame (200) or the membrane border (305). Accordingly, the stress-absorbing body (410) can be quickly heated during the heating step for demounting, and the heated heat is not transmitted to the pellicle frame (200) or the membrane border (305), thereby providing a technical effect of protecting the pellicle membrane.

[0214]

[0215] Referring to FIG. 9 below, the characteristics of a third demounting method of an EUV pellicle structure (2000) equipped with a third mounting block (403) according to an embodiment will be described.

[0216] First, in the demounting step, the stress absorbing body (410) and the second adhesive (520) can be heated by a heating device (700).

[0217] According to an embodiment, the third mounting block (403) may include a stress-absorbing through hole (T). Accordingly, heat from the heating step is blocked from being transmitted to the pellicle frame (200) or the membrane border (305), thereby providing a special technical effect of protecting the pellicle membrane from heat.

[0218] Next, the third mounting block (403) according to the embodiment can also be operated by the lever principle.

[0219] For example, by inserting a demounting jig (800) into the demounting slot (410S), the stress absorbing body (410) can be lifted by plastic deformation or elastic deformation, and the second adhesive (520) can be separated from the reticle (100).

[0220] Next, the demounting jig (800) is moved horizontally at a height where the third mounting block (403) is lifted, and demounting can be performed by applying force to the front while in a horizontal state.

[0221]

[0222] According to an embodiment, since the third mounting block (403) includes a stress-absorbing through hole (T) penetrating from the top to the bottom of the stress-absorbing body (410), the mechanical stress generated when lifting the stress-absorbing body (410) with the demounting jig (800) can be prevented from being transmitted to the pellicle frame and membrane border. Accordingly, there is a special technical effect of being able to demount the pellicle (1000) without damaging the pellicle membrane.

[0223] In addition, according to the embodiment, since the third mounting block (403) includes a stress-absorbing through hole (T), there is a technical effect that the stress-absorbing body (410) can be lifted while efficiently reducing mechanical stress generation along the stress-absorbing through hole (T) line when lifting the stress-absorbing body (410) with the demounting jig (800).

[0224]

[0225] Next, FIG. 10 is a cross-sectional view of an EUV pellicle structure (2002) according to the second embodiment.

[0226] The EUV pellicle structure (2002) according to the second embodiment can adopt the technical features of the EUV pellicle structure (2000) described above, and the features of the EUV pellicle structure (2002) according to the second embodiment will be described below.

[0227]

[0228] The EUV pellicle structure (2002) according to the second embodiment may include a fourth mounting block (404) having a stress buffer structure.

[0229] The above fourth mounting block (404) can adopt the technical features of the first to third mounting blocks (400, 402, 403), and the main features of the fourth mounting block (404) will be described below.

[0230] The fourth mounting block (404) may include a second mounting frame (422) arranged in a first direction (X), a stress-absorbing body (410) extending from the second mounting frame (422) in a second direction (Y) perpendicular to the first direction (X), and a stress-absorbing through hole penetrating from the top to the bottom of the stress-absorbing body (410).

[0231] The above stress-absorbing through hole may include a first stress-absorbing through hole (T1), a second stress-absorbing through hole (T2), and a third stress-absorbing through hole (T3) arranged in the stress-absorbing body (410) described above.

[0232] Unlike the first to third mounting blocks (400, 402, 403), in the fourth mounting block (404), the second mounting frame (422) can extend from the upper side of the stress absorbing body (410).

[0233] The upper surface of the second mounting frame (422) and the upper surface of the stress absorbing body (410) may be of the same height, but are not limited thereto.

[0234] The EUV pellicle structure (2002) according to the second embodiment may include a first adhesive (510) disposed between the bottom surface of the second mounting frame (422) and the pellicle frame (200).

[0235] Additionally, the EUV pellicle structure (2002) according to the second embodiment may include a second adhesive (520) disposed between the mounting spacer (430) and the reticle (100).

[0236]

[0237] Next, FIG. 11 is a cross-sectional view of an EUV pellicle structure (2003) according to the third embodiment.

[0238] The EUV pellicle structure (2003) according to the third embodiment can adopt the technical features of the EUV pellicle structures (2000, 2002) described above, and the features of the EUV pellicle structure (2003) according to the third embodiment will be described below.

[0239]

[0240] The EUV pellicle structure (2003) according to the third embodiment may include a fifth mounting block (405) having a stress buffer structure.

[0241] The fifth mounting block (405) can adopt the technical features of the first to fourth mounting blocks (400, 402, 403, 404), and the main features of the fifth mounting block (405) will be described below.

[0242] The fifth mounting block (405) may include a third mounting frame (423) arranged in a first direction (X), a stress-absorbing body (410) extending from the third mounting frame (423) in a second direction (Y) perpendicular to the first direction (X), and a stress-absorbing through hole penetrating from the top to the bottom of the stress-absorbing body (410).

[0243] The above stress-absorbing through hole may include a first stress-absorbing through hole (T1), a second stress-absorbing through hole (T2), and a third stress-absorbing through hole (T3) arranged in the stress-absorbing body (410) described above.

[0244] Unlike the first to fourth mounting blocks (400, 402, 403, 404), the third mounting frame (423) in the fifth mounting block (405) can extend from the middle side of the stress absorbing body (410).

[0245] For example, the third mounting frame (423) of the fifth mounting block (405) may be placed between the pellicle frame (200) and the membrane border (305).

[0246] The EUV pellicle structure (2003) according to the third embodiment can form a second separation space (D2) between the pellicle frame (200) and the membrane border (305).

[0247] The EUV pellicle structure (2003) according to the third embodiment has a technical effect of being able to control the size of the second separation space (D2) through the thickness of the third mounting frame (423).

[0248] The EUV pellicle structure (2003) according to the third embodiment may be provided with a predetermined filter in the second separation space (D2), but is not limited thereto.

[0249] The EUV pellicle structure (2003) according to the third embodiment may include a first adhesive (510) disposed between the bottom surface of the third mounting frame (423) and the pellicle frame (200).

[0250] Additionally, the EUV pellicle structure (2003) according to the third embodiment may include a second adhesive (520) disposed between the mounting spacer (430) and the reticle (100).

[0251] The EUV pellicle structure (2003) according to the third embodiment may place a predetermined elastic body or rubber between the reticle (100) and the pellicle frame (200), but is not limited thereto.

[0252]

[0253] Since the embodiment has a mounting block of an EUV pellicle having a stress buffering structure, there is a composite technical effect that can buffer or reduce 'mechanical stress' applied to a pellicle frame and a membrane border during the mounting or demounting step of the pellicle and 'thermal stress' caused by a difference in coefficient of thermal expansion (CTE) during the exposure process.

[0254] For example, the mounting block of the embodiment may include a stress-absorbing through hole (T) penetrating from the top to the bottom of the stress-absorbing body (410). Accordingly, the mechanical stress generated when lifting the stress-absorbing body (410) with a demounting jig (JIG) can be prevented from being transmitted to the pellicle frame (200) and the membrane border (305). Accordingly, there is a special technical effect of being able to demount the pellicle (1000) without damaging the pellicle membrane (310).

[0255] In addition, according to the embodiment, since the mounting block includes a stress-absorbing through hole (T), when the stress-absorbing body (410) is lifted with a demounting jig (JIG), it can be lifted through elastic deformation or plastic deformation along the stress-absorbing through hole (T), and there is a technical effect of absorbing or blocking mechanical stress.

[0256] In addition, since the mounting block according to the embodiment includes a stress-absorbing through hole (T), there is a special technical effect of blocking the heat of the adhesive heating step for demounting from being transferred to the pellicle frame (200) or membrane border (305), thereby protecting the pellicle membrane from heat.

[0257] In addition, according to the embodiment, there is a technical effect that can prevent PID (Pellicle Induced Distortion) from occurring due to a difference in coefficient of thermal expansion (CTE) between a pellicle frame and a mask substrate that are in contact with each other or a difference in coefficient of thermal expansion (CTE) between a pellicle frame and a pellicle membrane.

[0258] For example, in the embodiment, thermal stress due to a difference in coefficient of thermal expansion (CTE) between the pellicle frame and the reticle can be blocked by a stress-absorbing through hole (T) of the mounting block. Accordingly, thermal stress is not transmitted to the pellicle frame (200) or the membrane border (305), thereby providing a special technical effect of protecting the pellicle membrane from thermal stress.

[0259] In addition, according to the embodiment, there is a special technical effect that thermal stress due to a difference in coefficient of thermal expansion (CTE) between the pellicle frame and the pellicle membrane is blocked by the stress-absorbing through hole (T), so that the thermal stress is not transmitted to the reticle (100), thereby preventing PID (Pellicle Induced Distortion) from occurring.

[0260] In addition, there is a technical effect that the pressure difference between the inside and outside of the pellicle can be eliminated as a gap (S) is created between the pellicle frame (200) and the reticle (100) by the mounting block of the embodiment.

[0261]

[0262] The features, structures, effects, etc. described in the embodiments above are included in at least one embodiment, and are not necessarily limited to just one embodiment. Furthermore, the features, structures, effects, etc. exemplified in each embodiment can be combined or modified in other embodiments by those skilled in the art to which the embodiments pertain. Therefore, the contents related to such combinations and modifications should be construed as being included within the scope of the embodiments.

[0263] Although the above description focuses on examples, these are merely examples and are not intended to limit the examples. Those skilled in the art will appreciate that various modifications and applications not exemplified above are possible without departing from the essential characteristics of the present examples. For example, each component specifically shown in the examples can be modified and implemented. In addition, differences related to such modifications and applications should be interpreted as being included within the scope of the embodiments set forth in the appended claims.

[0264] In the case of manufacturing semiconductor devices or liquid crystal displays, a photolithography process may be used when patterning a semiconductor wafer or a liquid crystal substrate.

[0265] For example, the pellicle of the embodiment may be applied to, but is not limited to, an Extreme Ultra Violet (EUV) exposure process.

Claims

1. Mounting frame arranged in the first direction; a stress absorbing body extending from the mounting frame in a second direction perpendicular to the first direction; and A mounting block of an EUV pellicle having a stress buffer structure, including a stress absorbing through hole penetrating from the upper part to the lower part of the stress absorbing body.

2. In paragraph 1, A mounting block of an EUV pellicle having a stress buffer structure, wherein the stress-absorbing through hole includes a first stress-absorbing through hole extending in the first direction and arranged in the stress-absorbing body.

3. In paragraph 2, The above stress-absorbing through hole is, A second stress-absorbing through hole extending in a second direction perpendicular to the first direction from one end of the first stress-absorbing through hole, and A mounting block for an EUV pellicle having a stress buffer structure, the mounting block including a third stress absorbing through hole extending in the second direction from the other end of the first stress absorbing through hole.

4. In paragraph 1, The above mounting frame is a mounting block of an EUV pellicle having a stress buffer structure including a first guide portion on its upper surface.

5. In paragraph 1, A mounting block of an EUV pellicle, further comprising a mounting spacer extending in a negative (-) direction in a third direction perpendicular to the first direction and the second direction from the stress absorbing body.

6. In paragraph 5, The above mounting spacer member A mounting block for an EUV pellicle having a stress-absorbing structure including an adhesive-receiving groove.

7. In paragraph 6, A mounting block of an EUV pellicle having a stress buffer structure, further comprising a mounting groove disposed on the upper portion of the stress absorbing body.

8. In paragraph 7, The above mounting groove is a mounting block of an EUV pellicle having a stress buffer structure that overlaps the receiving groove of the above mounting spacer member between the upper and lower portions.

9. In paragraph 4, The above mounting spacer is a mounting block of an EUV pellicle having a stress buffer structure that protrudes from the lower side of the above stress absorbing body.

10. In paragraph 1, A mounting block of an EUV pellicle having a stress buffer structure, further comprising a single or multiple jig guide portions arranged on the lower side of the stress absorbing body.

11. In paragraph 10, The above jig guide part, A mounting block of an EUV pellicle having a stress buffer structure, which is positioned in opposite directions to the above-mentioned mounting frame.

12. In paragraph 1, A mounting block of an EUV pellicle having a stress-absorbing structure, further comprising a mounting connection frame connecting the above stress-absorbing body.

13. In paragraph 1, A mounting block of an EUV pellicle having a stress-absorbing structure, wherein the stress-absorbing body includes a single or multiple demounting slots on its side.

14. In paragraph 13, The above demounting slot is, A mounting block of an EUV pellicle having a stress buffer structure, which is positioned in opposite directions to the above-mentioned mounting frame.

15. In an EUV pellicle structure in which a pellicle frame is fixed on a reticle by a predetermined mounting block, An EUV pellicle structure, wherein the mounting block comprises a mounting block of an EUV pellicle having a stress buffer structure according to any one of claims 1 to 14.

16. In paragraph 15, An EUV pellicle structure comprising a first adhesive disposed between the mounting frame and the pellicle frame.

17. In paragraph 16, An EUV pellicle structure comprising a mounting block of an EUV pellicle having the above stress buffer structure and a second adhesive disposed between the reticle.

18. In paragraph 17, The mounting block of the EUV pellicle having the above stress buffer structure It includes a mounting spacer member that protrudes and extends downward from the above stress absorbing body, An EUV pellicle structure wherein the second adhesive is disposed between the mounting spacer and the reticle.

19. Reticle and An EUV exposure device comprising an EUV pellicle structure of claim 15 for fixing the reticle and pellicle.

20. A mounting step for fixing the EUV pellicle structure of Article 15 on the reticle; A step of heating the above stress absorbing body; A step of lifting the stress-absorbing body using a jig for demounting; and A method for mounting and demounting an EUV pellicle, comprising: a step of horizontally moving the above-described demounting jig to perform demounting; 21. In paragraph 20, The step of lifting the above stress absorbing body is: A method for mounting and demounting an EUV pellicle, comprising the step of inserting the demounting jig into a jig guide part provided in the stress-absorbing body and lifting the stress-absorbing body.

22. In paragraph 20, The step of lifting the above stress absorbing body is: A method for mounting and demounting an EUV pellicle, comprising the step of inserting the demounting jig into a demounting slot provided in the stress-absorbing body and lifting the stress-absorbing body.

23. In paragraph 20, In the step of lifting the above stress absorbing body, The above stress absorbing body is elastically deformed, and the method for mounting and demounting an EUV pellicle.

24. In paragraph 20, In the step of lifting the above stress absorbing body, The above stress absorbing body is a method for mounting and demounting an EUV pellicle that is plastically deformed.

25. In paragraph 20, The step of heating the above stress absorbing body is: A method for mounting and demounting an EUV pellicle, comprising the step of inserting a heating device into a mounting groove provided in the stress-absorbing body to heat the stress-absorbing body.

26. A mounting step for fixing the EUV pellicle structure of Article 15 on the reticle; a step of heating the above stress absorbing body; and A method for mounting and demounting an EUV pellicle, comprising: a step of demounting by inserting a jig pin into a mounting groove provided in the stress-absorbing body; 27. In paragraph 26, The steps in which the above demounting is performed are: A method for mounting and demounting an EUV pellicle, comprising: a step of moving the jig pin inserted into the mounting groove left and right within the mounting groove; and a step of performing demounting while the jig pin is horizontal.

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