Vapor phase growth device

Abstract

Provided is a vapor phase growth device that makes it possible to reduce cost and improve productivity. A vapor phase growth device (1) comprises a flow channel (10) and partition plates (12). The flow channel (10) has a gas passage (14) that guides a starting material gas. A substrate (2) is provided on the gas passage (14), and the starting material gas is guided through the gas passage (14) to a substrate surface (2a). The partition plates (12) partition the gas passage (14) (a first gas passage 17) into three levels upstream of the substrate surface (2a) and have a sloped surface (31) at a tip part on the substrate surface 2a side.

Description

Vapor phase growth equipment

[0001] The present invention relates to a vapor phase growth apparatus.

[0002] For example, a known vapor phase growth apparatus includes a substrate placed in a flow channel, a source gas introduced into the flow channel that flows along the surface of the substrate, and the source gas is heated to grow a semiconductor thin film on the surface of the substrate. This vapor phase growth apparatus allows a semiconductor thin film to be grown on the surface of the substrate (see, for example, Patent Document 1).

[0003] Patent No. 4474149

[0004] In the deposition process of semiconductor thin films in a vapor deposition system, ideally, all of the raw materials introduced are used to deposit the film on the substrate. However, the raw material gases used for semiconductor deposition are decomposed by the heating required for semiconductor film growth before reaching the substrate. This results in the formation of deposits on components surrounding the substrate that do not contribute to the growth of the semiconductor film. These deposits have various effects on the quality of the semiconductor film, such as changes in environmental temperature due to changes in the emissivity of the components, abnormal film formation due to the deposits, and corrosion of surrounding components. Furthermore, since not all of the raw materials are used to deposit the film on the substrate, there is an issue of increased costs. In particular, deposits upstream of the substrate can cause particles during the film deposition process, so these deposits must be removed regularly. The time required to remove the deposits reduces productivity.

[0005] In view of the above circumstances, an object of the present invention is to provide a vapor phase growth apparatus that can reduce costs and further increase productivity.

[0006] One aspect of the present invention is a vapor phase growth apparatus comprising: a gas passage for guiding a source gas, a substrate disposed in the gas passage; a flow channel for guiding the source gas through the gas passage to a surface of the substrate; and a partition plate that divides the gas passage into multiple layers upstream of the surface of the substrate, the partition plate having an inclined surface at its tip end on the surface side of the substrate.

[0007] In one aspect of the present invention, the inclined surface is inclined in a direction away from the surface of the substrate.

[0008] In one aspect of the present invention, the plurality of layers is three layers.

[0009] In one aspect of the present invention, the partition plates that divide the plurality of layers into three layers have the same length.

[0010] In one aspect of the present invention, the surface of the substrate is arranged facing downward.

[0011] According to the present invention, it is possible to provide a vapor phase growth apparatus that can reduce costs and further increase productivity.

[0012] 1 is a perspective view showing a vapor phase growth apparatus according to an embodiment of the present invention; FIG. 2 is an enlarged perspective view of part II in the vapor phase growth apparatus of FIG. 1; FIG. 3 is a cross-sectional view showing a vapor phase growth apparatus according to an embodiment; FIG. 4 is a cross-sectional view illustrating the inclined surface of a partition plate according to an embodiment; FIG. 5 is a cross-sectional view illustrating the inclined surface of a partition plate according to Comparative Example 1; FIG. 6 is a graph showing a deposition rate by a source gas corresponding to the inclined surface of the partition plate; FIG. 7 is a cross-sectional view illustrating the length of a partition plate according to an embodiment; FIG. 8 is a cross-sectional view illustrating the length of a partition plate according to Comparative Example 2; FIG. 9 is a cross-sectional view illustrating the length of a partition plate according to Comparative Example 3; FIG. 10 is a graph showing a growth rate on a substrate surface by a source gas corresponding to the length of the partition plate; FIG. 11 is a cross-sectional view illustrating the inclination angle of the inclined surface of a partition plate according to an embodiment; FIG. 12 is a cross-sectional view illustrating the inclination angle of the inclined surface of a partition plate according to Comparative Example 4; FIG. 13 is a cross-sectional view illustrating a state in which an inclined surface is not formed on a partition plate according to Comparative Example 5; FIG. 14 is a graph showing a deposition rate ratio on a ceiling by a source gas corresponding to the inclination angle of the partition plate; FIG. 15 is a cross-sectional view illustrating a low-speed region at the tip of a partition plate according to an embodiment; FIG. 16 is a cross-sectional view illustrating a low-speed region at the tip of a partition plate according to Comparative Example 4;

[0013] An embodiment of the present invention will be described below with reference to the drawings. (Vapor growth apparatus) As one embodiment of the present invention, a vapor growth apparatus 1 for growing a semiconductor thin film on the surface of a substrate will be described. Fig. 1 is a perspective view showing the vapor growth apparatus according to the embodiment. Fig. 2 is an enlarged perspective view of part II in the vapor growth apparatus of Fig. 1. Fig. 3 is a cross-sectional view showing the vapor growth apparatus according to the embodiment.

[0014] 1 to 3, the vapor phase growth apparatus 1 is a chemical vapor deposition apparatus that flows a source gas G along the surface 2a of a substrate 2 and causes a vapor phase reaction of the source gas G with heat to grow a compound semiconductor thin film on the surface 2a, which will be used as a material for high frequency devices, power semiconductors, etc. In particular, the vapor phase growth apparatus 1 is suitable for growing high quality gallium oxide crystals (GaO) that are highly reactive and have a wide band gap that requires high temperature growth. ２ O ３ ) on a sapphire substrate or Ga ２ O ３ In the embodiment, the device is a device for growing a sapphire substrate or a Ga substrate. ２ O ３ Gallium oxide crystal (Ga ２ O ３ ) will be described as an example of growing the crystals, but the present invention is not limited to this example.

[0015] Here, the vapor phase growth apparatus 1 includes a flow channel 10 and a partition plate 12. In the following description, the surface 2a of the substrate 2 may be referred to as the "substrate surface 2a." The compound semiconductor thin film may be referred to as the "thin film." In the figure, the arrow X direction indicates the width direction of the vapor phase growth apparatus 1, the arrow Y direction indicates the upstream-downstream direction of the vapor phase growth apparatus 1, and the arrow Z direction indicates the up-down direction of the vapor phase growth apparatus 1.

[0016] (Flow Channel) Flow channel 10 has gas passages 14 that guide source gas G to substrate 2 (substrate surface 2a). In flow channel 10, substrate 2 is placed on ceiling 15 of gas passages 14. Flow channel 10 guides source gas G to substrate surface 2a through gas passages 14. Flow channel 10 includes a first flow channel 20 and a second flow channel 21.

[0017] (First Flow Channel) The first flow channel 20 supplies the source gas G introduced from a gas inlet pipe (not shown) in a direction parallel to the substrate surface 2a. The first flow channel 20 has, in order from the gas flow direction of the source gas G, a gas inlet section 23, a first flow section 24, a second flow section 25, and a gas outlet section 26. In the first flow channel 20, the gas inlet section 23, the first flow section 24, the second flow section 25, and the gas outlet section 26 form a first gas passage 17. The first flow section 24 and the second flow section 25 are formed so that their widths gradually increase toward the downstream side in the gas flow direction in a plan view. Furthermore, the first flow section 24 has a shape in which its vertical height gradually decreases toward the downstream side in the gas flow direction in a side view.

[0018] The gas inlet section 23 is formed in substantially the same shape as the most upstream section of the first flow section 24. The gas inlet section 23 has a square or nearly square cross section in the gas flow direction, and a gas inlet pipe (not shown) is inserted into the center. The gas blowout section 26 guides the source gas G flowing out from the second flow section 25 toward the substrate surface 2a. The gas blowout section 26 is formed in a flat shape facing the horizontal direction, similar to the shape of the most downstream section of the second flow section 25. The opening width of the gas blowout section 26 is formed to be larger than the diameter of the substrate 2.

[0019] The source gas introduced into gas introduction section 23 from a gas introduction pipe (not shown) is diffused evenly in all directions within gas introduction section 23 and flows into first flow section 24. In this first flow section 24, the height dimension gradually decreases while the width dimension gradually increases, so that the flow of the source gas is pressed down from above and below and spread evenly in the width direction.

[0020] Furthermore, when the raw material gas flows into the second flow section 25, its height remains unchanged and only its width expands, so that the flow of raw material gas that tends to diffuse in all directions is suppressed in the vertical direction while facilitating diffusion in the width direction of both side walls. In addition, because both side walls are widened, there is almost no disruption of the gas flow due to contact with the side walls, and a uniform gas flow can be formed.

[0021] (Second Flow Channel) The second flow channel 21 is connected to the most downstream portion of the gas blowing section 26. The second flow channel 21 is formed in a flat shape facing the horizontal direction, similar to the shape of the gas blowing section 26. The second flow channel 21 has a second gas passage 18 that communicates with the first gas passage 17 of the first flow channel 20. The first gas passage 17 and the second gas passage 18 form the gas passage 14 of the flow channel 10.

[0022] The substrate 2 is disposed on the ceiling 15 side of the second flow channel 21. For example, the substrate surface 2a of the substrate 2 is exposed from the ceiling 15 of the second flow channel 21 to the second gas passage 18 (i.e., the gas passage 14). The substrate surface 2a is disposed facing downward. That is, the vapor phase growth apparatus 1 according to this embodiment is a so-called face-down type. Because the vapor phase growth apparatus 1 is a face-down type, even if deposits occur upstream of the substrate surface 2a or on the opposing surface of the substrate, the deposits can be prevented from falling onto the substrate surface 2a. A source gas G is introduced into the second flow channel 21 from the gas outlet 26 toward the downstream side. The source gas G introduced into the second flow channel 21 is guided to the substrate surface 2a through the second gas passage 18 (gas passage 14).

[0023] (Partition Plate) At least one partition plate 12 is provided in the first gas passage 17 of the first flow channel 20. In the embodiment, two partition plates 12 will be described as an example of the at least one partition plate 12. The number of partition plates 12 is not limited to two. As another example, for example, one partition plate 12 may be provided in the first gas passage 17.

[0024] The two partition plates 12 are arranged at a distance in the vertical direction in the first gas passage 17. Specifically, of the two partition plates 12, the upper partition plate is arranged at a distance downward from the ceiling 15 of the first flow channel 20. Also, of the two partition plates 12, the lower partition plate 12 is arranged at a distance downward from the upper partition plate 12. Furthermore, the lower partition plate 12 is arranged at a distance upward from the floor 16 of the first flow channel 20.

[0025] That is, the first gas passage 17 of the first flow channel 20 is partitioned into multiple layers by an upper partition plate 12 and a lower partition plate 12 on the upstream side of the substrate surface 2a. Specifically, the first gas passage 17 of the first flow channel 20 is partitioned by the upper partition plate 12 and the lower partition plate 12 into three layers of passages, namely, a first passage 17a, a second passage 17b, and a third passage 17c, from top to bottom. The second passage 17b is the central passage of the three layers. The first passage 17a and the third passage 17c are passages on both sides in the vertical direction.

[0026] In the gas introduction section 23, oxygen (O ２ In the gas inlet 23, an organometallic compound (O ２ + carrier gas (an inert gas such as Ar) G2 is introduced. Note that in the embodiment, trimethylgallium (TMG) G2 is used as the organometallic compound G2, but the organometallic compound G2 is not limited to trimethylgallium G2.

[0027] The two partition plates 12 are formed in the same shape. In the following description, the upper partition plate 12 will be abbreviated as "partition plate 12," and a description of the lower partition plate 12 will be omitted. The partition plate 12 has an inclined surface 31 at its tip. The inclined surface 31 is formed so that the upper surface 12a of the partition plate 12 on the substrate surface 2a side is inclined downward toward the downstream side. In other words, the inclined surface 31 is inclined downward in a direction away from the substrate surface 2a. The reason for inclining the inclined surface 31 in a direction away from the substrate surface 2a will be explained in detail with reference to Figures 4 to 6.

[0028] The inclined surface 31 is formed at an inclination angle θ1 with respect to the upper surface 12a of the partition plate 12. The inclination angle θ1 of the inclined surface 31 is set, for example, in the range of θ1 = 3° to 30°. It is also preferable that the inclination angle θ1 be set in the range of θ1 = 3° to 8°. The reason for setting the inclination angle θ1 in the range of 3° to 30° will be explained in detail with reference to FIGS. 11 to 17.

[0029] Here, the upper partition plate 12 and the lower partition plate 12 are formed to have the same length in the flow direction (Y direction) of the source gas G. That is, the tip 12b of the upper partition plate 12 and the tip 12b of the lower partition plate 12 are disposed at the same position in the up-down direction. The reason for forming the upper partition plate 12 and the lower partition plate 12 to have the same length will be explained in detail with reference to FIGS. 6 to 10 .

[0030] (Inclined Surface of Partition Plate) Next, the reason why the inclined surface 31 of the partition plate 12 is inclined in a direction away from the substrate surface 2a will be explained in detail with reference to FIGS. 4 to 6. FIG. 4 is a cross-sectional view illustrating the inclined surface of the partition plate according to the embodiment. As shown in FIG. 4, the inclined surface 31 at the tip of the partition plate 12 according to the embodiment is inclined in a direction away from the substrate surface 2a. A source gas G is introduced near the downstream side of the partition plate 12 as indicated by arrow A. The introduced source gas G grows as a deposit 41 on the ceiling 15 near the downstream side (i.e., upstream of the substrate surface 2a).

[0031] Fig. 5 is a cross-sectional view illustrating the inclined surface of the partition plate according to Comparative Example 1. As shown in Fig. 5, the partition plate 100 of Comparative Example 1 is inclined such that the inclined surface 102 at the leading end approaches the substrate surface 2a. A source gas G is introduced near the downstream side of the partition plate 100 as indicated by arrow B. The introduced source gas G grows as a deposit 42 on the ceiling 15 near the downstream side (i.e., on the upstream side of the substrate surface 2a).

[0032] Simulations were performed to investigate differences in deposition of source gas on the ceiling plate caused by differences in the shape of the partition plate. Figure 6 is a graph showing the deposition rate of source gas corresponding to the inclined surface of the partition plate. In Figure 6, the vertical axis represents the deposition rate on the ceiling 15. The horizontal axis represents the downstream position on the ceiling 15 relative to the tips 12b, 100a of the partition plates 12, 100. Graph Gr1 is a graph showing the deposition state of the partition plate 12 in the embodiment. Graph Gr2 is a graph showing the deposition state of the partition plate 100 in Comparative Example 1.

[0033] As shown in Figures 4 to 6, it can be seen that the deposition rate in graph Gr2 of Comparative Example 1 is higher than the deposition rate in graph Gr1 of the embodiment. That is, the partition plate 100 of Comparative Example 1 grows deposits 42 faster near the downstream side of the partition plate 100 (upstream side of the substrate surface 2a) than the partition plate 12 of the embodiment. Therefore, the partition plate 100 of Comparative Example 1 adheres more deposits 42 upstream of the substrate surface 2a than the partition plate 12 of the embodiment. As a result, the partition plate 12 of the embodiment can suppress deposits 41 to a smaller extent upstream of the substrate surface 2a than the partition plate 100 of Comparative Example 1. Therefore, the partition plate 12 of the embodiment can efficiently grow a thin film on the substrate surface 2a. Furthermore, the reproducibility of the growth rate of the thin film on the substrate surface 2a can be ensured.

[0034] (Length of Partition Plate) Next, the reason for forming the partition plates 12 to have the same length will be explained in detail with reference to Figs. 7 to 10. Fig. 7 is a cross-sectional view illustrating the length of the partition plate according to the embodiment. As shown in Fig. 7, the upper partition plate 12 and the lower partition plate 12 in the embodiment are formed to have the same length. In the first flow channel 20 according to the embodiment, oxygen (O ２ A carrier gas (an inert gas such as Ar) G1 is introduced into the first flow channel 20. Trimethylgallium G2, one of the source gases G, is introduced into the second passage 17b of the first flow channel 20. The introduced oxygen G1 and trimethylgallium G2 undergo a gas-phase reaction downstream of the tip 12b of the upper partition plate 12 and the tip 12b of the lower partition plate 12.

[0035] 8 is a cross-sectional view illustrating the length of the partition plate according to Comparative Example 2. As shown in FIG. 8, the lower partition plate 104 in Comparative Example 2 is formed shorter than the upper partition plate 12. In the first flow channel 20 of Comparative Example 2, oxygen (O ２ A carrier gas (an inert gas such as Ar) G1 is introduced into the first flow channel 20. Trimethylgallium G2, one of the source gases G, is introduced into the second passage 17b of the first flow channel 20. The introduced oxygen G1 and trimethylgallium G2 react downstream of the tip 104a of the lower partition plate 104. The oxygen G1 and trimethylgallium G2 also undergo a gas-phase reaction upstream of the tip 12b of the upper partition plate 12.

[0036] 9 is a cross-sectional view illustrating the length of the partition plate according to Comparative Example 3. As shown in FIG. 9, the upper partition plate 106 in Comparative Example 3 is formed shorter than the lower partition plate 12. In the first flow channel 20 of Comparative Example 3, oxygen (O ２A carrier gas (an inert gas such as Ar) G1 is introduced into the first flow channel 20. Trimethylgallium G2, one of the source gases G, is introduced into the second passage 17b of the first flow channel 20. The introduced oxygen G1 and trimethylgallium G2 react downstream of the tip 106a of the upper partition plate 106. The oxygen G1 and trimethylgallium G2 also undergo a gas-phase reaction upstream of the tip 12b of the lower partition plate 12.

[0037] A simulation was performed to investigate the difference in deposition of source gas on the ceiling plate caused by differences in the length of the partition plate. Figure 10 is a graph showing the growth rate of the substrate surface by the source gas corresponding to the length of the partition plate. In Figure 10, the vertical axis shows the growth rate of the substrate surface 2a. The horizontal axis shows the position of the substrate surface 2a. Graph Gr3 is a graph showing the growth state of the substrate surface 2a in the embodiment. Graph Gr4 is a graph showing the growth state of the substrate surface 2a in Comparative Example 2. Graph Gr5 is a graph showing the growth state of the substrate surface 2a in Comparative Example 3.

[0038] 10 , it can be seen that the graph Gr3 of the embodiment has a faster thin film growth rate on the substrate surface 2a due to the source gas G than the graph Gr4 of Comparative Example 2 and the graph Gr5 of Comparative Example 3. That is, in the embodiment, oxygen G1 and trimethylgallium G2 undergo a gas phase reaction downstream compared to Comparative Examples 2 and 3. As a result, the embodiment can achieve a faster thin film growth rate on the substrate surface 2a than Comparative Examples 2 and 3. For example, the thin film growth rate of the embodiment can be increased by 10% compared to Comparative Examples 2 and 3.

[0039] (Tilt Angle of Inclined Surface of Partition Plate) Next, the reason for setting the tilt angle θ1 of the tilted surface 31 of the partition plate 12 in the range of 3° to 30° will be described in detail with reference to FIGS. 11 to 17. FIG. 11 is a cross-sectional view illustrating the tilt angle of the tilted surface of the partition plate according to the embodiment. As shown in FIG. 11, the tilt angle θ1 of the tilted surface 31 of the partition plate 12 according to the embodiment is set to θ1 = 7.5°. This makes it possible to suppress the deposition rate on the ceiling 15 due to the gas-phase reaction of oxygen G1 and trimethylgallium G2 on the downstream side of the tip 12b of the partition plate 12.

[0040] 12 is a cross-sectional view illustrating the inclination angle of the inclined surface of the partition plate according to Comparative Example 4. As shown in Fig. 12, the inclination angle θ2 of the inclined surface 109 of the partition plate 108 according to Comparative Example 4 is set to θ2 = 45° with respect to the upper surface 108b. As a result, the deposition rate on the ceiling 15 due to the gas phase reaction of oxygen G1 and trimethylgallium G2 becomes faster on the upstream side of the tip 108a of the partition plate 108 compared to the embodiment.

[0041] 13 is a cross-sectional view illustrating a state in which no inclined surface is formed on the partition plate according to Comparative Example 5. As shown in FIG. 13, no inclined surface is formed on the partition plate 112 of Comparative Example 5. That is, the tip 112a of the partition plate 112 of Comparative Example 5 is set at an angle θ3 of 90° relative to the upper surface 112b. As a result, the deposition rate on the ceiling 15 due to the gas-phase reaction of oxygen G1 and trimethylgallium G2 is faster on the upstream side of the tip 112a of the partition plate 112 compared to the embodiment.

[0042] Simulations were performed to investigate the difference in deposition of source gas on the ceiling plate caused by differences in the inclination angle of the partition plate. FIG. 14 is a graph showing the deposition rate ratio of the source gas on the ceiling corresponding to the inclination angle of the partition plate. In FIG. 14, the vertical axis shows the deposition rate ratio of the source gas G on the ceiling 15 downstream of the partition plate 12. The horizontal axis shows the downstream position relative to the tips 12b, 108a, 112a of the partition plates 12, 108, 112. Graph Gr6 is a graph showing the deposition rate ratio corresponding to the partition plate 12 in the embodiment. Graph Gr7 is a graph showing the deposition rate ratio corresponding to the partition plate 108 in Comparative Example 4. Graph Gr8 is a graph showing the deposition rate ratio corresponding to the partition plate 112 in Comparative Example 5.

[0043] 11 to 14 , the peak of the deposition rate ratio in graph Gr6 of the embodiment is P1. The peak of the deposition rate ratio in graph Gr7 of comparative example 4 is P2. The peak of the deposition rate ratio in graph Gr8 of comparative example 5 is P3. Graphs Gr6 to Gr8 show that the peak of the deposition rate ratio in the embodiment is located downstream of the peak of the deposition rate ratio in comparative example 4 and the peak of the deposition rate ratio in comparative example 5, P2.

[0044] Therefore, the peak P1 of the deposition rate ratio in the embodiment can be shifted closer to the substrate surface 2a compared to Comparative Example 4 and Comparative Example 5. As a result, the partition plate 12 of the embodiment can increase the growth rate of the thin film on the substrate surface 2a compared to the partition plate 108 of Comparative Example 4 and the partition plate 112 of Comparative Example 5. Furthermore, by shifting the peak P1 of the deposition rate ratio in the partition plate 12 of the embodiment closer to the substrate surface 2a compared to Comparative Example 4 and Comparative Example 5, deposits (particles) such as dust and foreign matter adhering to the ceiling 15 can be reduced.

[0045] 15 is a cross-sectional view illustrating a low-velocity region at the tip of the partition plate according to the embodiment. As shown in FIG. 15, the partition plate 12 according to the embodiment has a small low-velocity region Lsa1 of the source gas G near the downstream side of the tip 12b. Therefore, the partition plate 12 can minimize stagnation of the flow of the source gas G near the downstream side of the tip 12b.

[0046] 16 is a cross-sectional view illustrating the low-velocity region at the tip of the partition plate according to Comparative Example 4. As shown in FIG. 16, in the partition plate 108 of Comparative Example 4, the low-velocity region Lsa2 of the source gas G near the downstream side of the tip 108a extends farther downstream than the low-velocity region Lsa1 of the embodiment. Therefore, in the partition plate 108, the stagnation of the flow of the source gas G near the downstream side of the tip 108a is greater than in the partition plate 12 of the embodiment.

[0047] 17 is a cross-sectional view illustrating the low-velocity region at the tip of the partition plate according to Comparative Example 5. As shown in Fig. 17, in the partition plate 112 of Comparative Example 5, the low-velocity region Lsa3 of the source gas G near the downstream side of the tip 112a extends farther downstream than the low-velocity region Lsa2 of the embodiment. Therefore, in the partition plate 112, the stagnation of the flow of the source gas G near the downstream side of the tip 112a is greater than in the partition plate 12 of the embodiment.

[0048] As shown in Figures 15 to 17, the partition plate 12 of the embodiment can reduce stagnation of the flow of the raw material gas G near the downstream side of the tip 12b compared to the partition plate 108 of Comparative Example 4 and the partition plate 112 of Comparative Example 5.

[0049] Here, when the stagnation of the flow of the source gas G is large near the downstream side of each of the tips 108 a, 112 a as in Comparative Examples 4 and 5, the introduced source gas G is likely to remain near the downstream side of the tips 108 a, 112 a for a long time and cause a gas-phase reaction. Therefore, powder is likely to be formed in the gas phase of the source gas G by the gas-phase reaction near the downstream side of the tip 108 a of the partition plate 108 in Comparative Example 4 and near the downstream side of the tip 112 a of the partition plate 112 in Comparative Example 5.

[0050] In contrast, the partition plate 12 in the embodiment minimizes stagnation of the flow of the source gas G near the downstream side of the tip 12 b. This makes it possible to suppress the formation of powder in the gas phase of the source gas G due to a gas-phase reaction near the downstream side of the tip 12 b of the partition plate 12 in the embodiment. This makes it possible to suppress deposition of the source gas G on the ceiling 15 upstream of the substrate surface 2 a.

[0051] While the example in which the inclination angle θ1 of the inclined surface 31 of the partition plate 12 of the embodiment shown in Fig. 11 is set to θ1 = 7.5° has been described, the same effects and advantages as those of θ1 = 7.5° can be obtained by setting the inclination angle θ1 in the range of θ1 = 3° to 30°. Furthermore, it is preferable to set the inclination angle θ1 in the range of θ1 = 3° to 8°.

[0052] According to the vapor phase growth apparatus 1 of the embodiment described above, as shown in FIGS. 11 to 17 , the gas passage 14 is divided into multiple layers by the partition plate 12 upstream of the substrate surface 2a. Furthermore, an inclined surface 31 is formed at the tip of the partition plate 12 on the substrate surface 2a side. This allows the peak P1 of the deposition rate ratio of the source gas G to the gas passage 14 to be shifted closer to the substrate surface 2a. This increases the thin film growth rate on the substrate surface 2a. This improves productivity. Furthermore, shifting the peak P1 of the deposition rate ratio of the source gas G closer to the substrate surface 2a reduces deposits such as dust and foreign matter adhering to the gas passage 14. This reduces the number of times deposits accumulated in the gas passage 14 need to be removed. This contributes to cost reduction.

[0053] In addition, stagnation of the flow of the source gas G can be minimized near the downstream side of the tip 12b of the partition plate 12. This can prevent powder from being formed due to a gas-phase reaction of the source gas G near the downstream side of the tip 12b of the partition plate 12. This can prevent deposits of the source gas G from adhering to the gas passage 14 on the upstream side of the substrate surface 2a. This can reduce the number of times deposits accumulated in the gas passage 14 need to be removed. In this way, by increasing the growth rate of the thin film on the substrate surface 2a and further reducing the deposits adhering to the gas passage 14, the cost of the substrate 2 can be reduced and the productivity of the substrate 2 can be further improved.

[0054] 4 to 6, the inclined surface 31 of the partition plate 12 is inclined in a direction away from the substrate surface 2a. Therefore, the partition plate 12 can reduce deposits caused by the source gas G on the upstream side of the substrate surface 2a. As a result, the partition plate 12 can efficiently grow a thin film on the substrate surface 2a.

[0055] 3, the first gas passage 17 of the gas passage 14 is partitioned into three layers by a partition plate 12. This allows the first gas passage 17 to be partitioned into a central second passage 17b and two side first passages 17a and third passages 17c. This allows, for example, trimethylgallium G2 to be introduced into the central second passage 17b of the three layers, and oxygen G1 to be introduced into the two side first passages 17a and third passages 17c. This allows oxygen G1 and trimethylgallium G2 to be supplied to the substrate 2 while suppressing a gas-phase reaction between oxygen G1 and trimethylgallium G2 downstream of the partition plate 12 before they are supplied to the substrate 2.

[0056] 7 to 10, the partition plates 12 that divide the gas passage 14 into three layers are all the same length, which increases the growth rate of the source gas G downstream of the tip 12b of the partition plate 12. This increases the growth rate of the thin film on the substrate surface 2a.

[0057] Furthermore, the substrate surface 2a of the substrate 2 is placed facing downward. This allows, for example, dust or foreign matter adhering to the substrate surface 2a to fall downward. This allows a thin film to be favorably grown on the substrate surface 2a.

[0058] The technical scope of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

[0059] In addition, within the scope of the spirit of the present invention, the components in the above-described embodiments may be replaced with well-known components as appropriate, and the above-described modifications may be combined as appropriate.

[0060] DESCRIPTION OF SYMBOLS 1... Vapor phase growth apparatus 2... Substrate 2a... Substrate surface (surface of substrate) 10... Flow channel 12... Partition plate 12b... Tip of partition plate 14... Gas passage 17... First gas passage 20... First flow channel 31... Inclined surface G... Source gas

Claims

1. A vapor phase growth apparatus comprising: a gas passage for guiding a source gas, a substrate being placed in the gas passage, a flow channel for guiding the source gas through the gas passage to a surface of the substrate, and a partition plate dividing the gas passage into multiple layers upstream of the surface of the substrate, the tip of which on the surface side of the substrate is formed into an inclined surface.

2. The vapor phase growth apparatus according to claim 1, wherein the inclined surface is inclined in a direction away from the surface of the substrate.

3. The vapor deposition apparatus of claim 2, wherein said multiple layers are three layers.

4. The vapor phase growth apparatus according to claim 3, wherein the partition plates dividing the plurality of layers into three layers have the same length.

5. A vapor phase growth apparatus according to any one of claims 1 to 4, wherein the surface of the substrate is arranged facing downward.

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