Organic light-emitting display apparatus and manufacturing method therefor

Abstract

An organic light-emitting display apparatus and a manufacturing method therefor. The apparatus comprises: a substrate (10) comprising a plurality of pixel regions (101) arranged at intervals; and anodes (11) arranged in the pixel regions (101), wherein a plurality of separation structures are provided between the pixel regions (101), and the separation structures each comprise: a first insulating layer (12) filled between the pixel regions (101); a second insulating layer (13) arranged on the first insulating layer (12), the second insulating layer (13) covering the first insulating layer (12); a first connecting electrode (15) arranged on the second insulating layer (13); a first support layer (16) arranged on the first connecting electrode (15); a lower partition layer (17) arranged on the first support layer (16), the edge of the lower partition layer (17) extending beyond the edge of the first support layer (16); a second support layer (22) arranged on the lower partition layer (17); and an upper partition layer (23) arranged on the second support layer (22), the edge of the upper partition layer (23) extending beyond the edge of the second support layer (22).

Description

Organic light emitting display device and manufacturing method thereof

[0001] This application claims priority to Chinese Patent Application No. 202410873374.8, filed on June 28, 2024, and Chinese Patent Application No. 202410872927.8, filed on June 28, 2024, the contents of which are incorporated herein by reference in their entirety. TECHNICAL FIELD

[0002] The present application relates to the technical field of display, for example, to an organic light emitting display device and a manufacturing method thereof. BACKGROUND

[0003] An organic light emitting display device is a display device using an organic light emitting diode (OLED) as a display pixel. Compared with a traditional liquid crystal display device, the organic light emitting display device has more and more market welcome due to its self-luminous, low power consumption, good color effect, flexible display and other advantages.

[0004] FIG. 1 is a schematic diagram of a partial cross-sectional structure of an organic light emitting display device in the related art. As shown in FIG. 1, an array of pixels 20 is arranged on one side of a substrate 10, and the pixel 20 includes an anode 11, an organic light emitting layer 18, and a cathode 19 arranged in layers. When electrons and holes are injected into the organic light emitting layer 18 from the cathode 19 and the anode 11, respectively, the electrons and holes recombine in the organic light emitting layer 18 to release energy and emit light. The material of the organic light emitting layer 18 can determine the light emitting color of the pixel 20.

[0005] A pixel definition layer 21 is arranged on the upper layer of the anode 11', and the pixel definition layer 21 is located between adjacent pixels 20 to divide and define multiple pixel regions.

[0006] The organic light emitting layer 18 is formed on the upper layer of the pixel definition layer 21, and the organic light emitting layer 18 includes a first carrier adjusting layer 181, a light emitting material layer 182, and a second carrier adjusting layer 183 arranged in layers. The first carrier adjusting layer 181 and the second carrier adjusting layer 183 are both arranged as an integral layer, i.e., the first carrier adjusting layer 181 and the second carrier adjusting layer 183 are continuous film layers between the multiple pixels 20.

[0007] In the related art, an open mask or a fine metal mask (FMM) is used for evaporation of the organic light emitting layer in the process of the organic light emitting display device.

[0008] An open mask refers to a mask with a large open area, which is suitable for forming a film layer with a large coverage area on a substrate. When an organic light-emitting layer is evaporated through the open mask, the opening of the open mask can correspond to the entire display area of the display device, so that the organic light-emitting layer formed by evaporation covers the entire display area of the display device.

[0009] In a display device using an open mask to evaporate an organic light-emitting layer, the organic light-emitting layer corresponding to all pixels is formed of the same organic material, and the organic light-emitting layer usually emits white light, so that a color image is displayed by combining a color filter (CF). However, the color gamut of the color filter limits the color gamut of the display panel, thereby affecting the final display effect of the display device.

[0010] A fine metal mask (FMM) has a plurality of hollow openings matching the size of the pixels, through which the organic material can be accurately deposited into the corresponding pixel area.

[0011] In a display device using a fine metal mask to evaporate an organic light-emitting layer, different colors of organic materials are evaporated through the fine metal mask to form organic light-emitting layers corresponding to pixels of different colors. Due to the manufacturing deviation, alignment deviation and thermal deformation of the fine metal mask, the film forming position of the organic light-emitting layer deviates greatly from the preset position. In addition, the fine metal mask has a high cost, which leads to a high manufacturing cost of the display device. Therefore, for a micro display device with high resolution, the fine metal mask is difficult to achieve a super-small metal hollow opening due to the limitation of process difficulty.

[0012] In addition, the organic light-emitting layer 18 in the organic light-emitting display device has an interface in contact with the outside world. Water vapor from the outside world enters the inside of the organic light-emitting display device through the first carrier adjustment layer 181 and the second carrier adjustment layer 183 arranged in the whole layer, thereby eroding the organic film layer including the organic light-emitting layer 18 from the edge to the inside of the organic light-emitting display device, and further forming a display defect. SUMMARY

[0013] The present application provides an organic light-emitting display device and a manufacturing method thereof to solve the problems of high difficulty in forming an organic light-emitting layer and water vapor intrusion.

[0014] Embodiments of the present application provide an organic light emitting display device, comprising: a substrate comprising a plurality of pixel regions arranged at intervals; an anode arranged in the pixel regions, and a separation structure arranged between the pixel regions; the separation structure comprising: a first insulating layer filled between the pixel regions; a second insulating layer arranged on the first insulating layer, the second insulating layer covering the first insulating layer; a first connecting electrode arranged on the second insulating layer; a first support layer arranged on the first connecting electrode; a lower partition layer arranged on the first support layer, an edge of the lower partition layer exceeding an edge of the first support layer; a second support layer arranged on the lower partition layer; and an upper partition layer arranged on the second support layer, an edge of the upper partition layer exceeding an edge of the second support layer.

[0015] Embodiments of the present application provide a manufacturing method of an organic light emitting display device, comprising: providing a substrate comprising a plurality of pixel regions arranged at intervals, the plurality of pixel regions comprising pixel regions for displaying different colors; forming an anode in the plurality of pixel regions; forming a plurality of separation structures between the anodes, the separation structure comprising an upper partition layer at a top portion thereof; forming organic light emitting layers emitting different colors, wherein forming any one of the organic light emitting layers emitting different colors comprises: forming an organic light emitting material layer covering the plurality of pixel regions and the plurality of separation structures; removing the organic light emitting material layer on a top surface and a side surface of the upper partition layer; and removing the organic light emitting material layer in a pixel region not displaying the color to form an organic light emitting layer in a pixel region displaying the color. BRIEF DESCRIPTION OF DRAWINGS

[0016] FIG. 1 is a schematic diagram of a partial cross-sectional structure of an organic light emitting display device in the related art;

[0017] FIG. 2 is a schematic diagram of a structure of an organic light emitting display device according to an embodiment of the present application;

[0018] FIG. 3 is a schematic diagram of a cross-sectional structure of FIG. 2 along A-A’ direction;

[0019] FIG. 4 is a schematic diagram of a partial cross-sectional structure of an organic light emitting display device according to an embodiment of the present application;

[0020] FIGS. 5-9 are schematic diagrams of a manufacturing method of an organic light emitting display device in the related art;

[0021] FIG. 10 is a schematic diagram of a structure of another organic light emitting display device according to an embodiment of the present application;

[0022] FIG. 11 is a schematic diagram of a cross-sectional structure of FIG. 10 along B-B’ direction;

[0023] FIG. 12 is a schematic view of a partial cross-sectional structure of another organic light emitting display device according to embodiments of the present application;

[0024] FIG. 13 is a schematic view of a partial cross-sectional structure of another organic light emitting display device according to embodiments of the present application;

[0025] FIG. 14 is a schematic view of a structure of a vapor deposition process according to embodiments of the present application;

[0026] FIG. 15 is a schematic view of a structure of another vapor deposition process according to embodiments of the present application;

[0027] FIG. 16 is a schematic view of a partial cross-sectional structure of another organic light emitting display device according to embodiments of the present application;

[0028] FIG. 17 is a schematic view of a partial cross-sectional structure of another organic light emitting display device according to embodiments of the present application;

[0029] FIG. 18 is a schematic view of a partial cross-sectional structure of another organic light emitting display device according to embodiments of the present application;

[0030] FIG. 19 is a schematic view of a partial cross-sectional structure of another organic light emitting display device according to embodiments of the present application;

[0031] FIG. 20 is a schematic view of a film layer structure of a pixel according to embodiments of the present application;

[0032] FIG. 21 is a schematic view of a film layer structure of a pixel according to embodiments of the present application;

[0033] FIG. 22 is a flowchart of a manufacturing method of an organic light emitting display device according to embodiments of the present application;

[0034] FIGS. 23-64 are flowcharts of manufacturing methods of another organic light emitting display device according to embodiments of the present application. DETAILED DESCRIPTION

[0035] The technical solutions in embodiments of the present application will be described below with reference to the drawings in embodiments of the present application. Obviously, the described embodiments are only a part of embodiments of the present application, rather than all embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work should fall within the scope of protection of the present application.

[0036] It should be noted that the terms "first", "second", and the like in the description and in the claims of the present application and the above-described accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a particular sequential or chronological order. It should be understood that the data thus used can be interchanged, where appropriate, so that the embodiments of the present application described herein can be carried out in other than the order shown or described herein. Furthermore, the terms "comprise" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, processes, methods, systems, products, or devices that include a series of steps or units are not necessarily limited to those clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products, or devices.

[0037] FIG. 2 is a structural schematic diagram of an organic light-emitting display device provided by an embodiment of the present application, and FIG. 3 is a structural schematic diagram of a cross section along the A-A' direction of FIG. 2. As shown in FIG. 2 and FIG. 3, the organic light-emitting display device provided by the embodiment of the present application includes:

[0038] a substrate 10, the substrate 10 including a plurality of pixel regions 101 arranged at intervals.

[0039] an anode 11 arranged in the pixel region 101, and a partition structure arranged between the pixel regions 101;

[0040] the partition structure including:

[0041] a first insulating layer 12 filled between the anodes 11

[0042] a second insulating layer 13 arranged on the first insulating layer 12, the second insulating layer 13 covering the first insulating layer 12;

[0043] a first connection electrode 15 arranged on the second insulating layer 13;

[0044] a first support layer 16 arranged on the first connection electrode 15;

[0045] a lower partition layer 17 arranged on the first support layer 16, an edge of the lower partition layer 17 exceeding an edge of the first support layer 16;

[0046] a second support layer 22 arranged on the lower partition layer 17;

[0047] an upper partition layer 23 arranged on the second support layer 22, an edge of the upper partition layer 23 exceeding an edge of the second support layer 22.

[0048] As shown in FIG. 2 and FIG. 3, the substrate 10 can be a driving substrate, and the substrate 10 is defined with a plurality of pixel regions 101 arranged in an array.

[0049] FIG. 4 is a schematic view of a partial cross-sectional structure of an organic light emitting display device according to an embodiment of the present application. As shown in FIG. 4, the substrate 10 can include a substrate 31, and the substrate 31 can be provided with a driving transistor T corresponding to the pixel region 101. The driving transistor T can be connected to the anode 11, and the driving transistor T can provide the pixel with a working signal corresponding to the luminance of the pixel via the anode 11 to drive the pixel to emit light.

[0050] The driving transistor T can include a stacked active region T1, a gate T2, and a source-drain electrode layer T3. The active region T1 can be formed in the substrate 31, but is not limited thereto.

[0051] Referring to FIGS. 2-4, the anode 11 can be formed in the pixel region 101 on the substrate 10. The anodes 11 corresponding to a plurality of pixel regions 101 can be arranged in an electrically isolated manner. The anode 11 can serve as one electrode of the pixel and can inject carriers (e.g., holes) into the pixel under the driving of an external positive voltage.

[0052] As shown in FIGS. 3 and 4, the first insulating layer 12 can be filled between adjacent anodes 11. In the lateral direction, the first insulating layer 12 can be located between adjacent anodes 11. The first insulating layer 12 can help ensure electrical insulation between adjacent anodes 11. In addition, since the anode 11 has a certain thickness, a recess can be formed between the two anodes 11. The first insulating layer 12 filled between adjacent anodes 11 can also help reduce the height difference between the region where the anode 11 is located and the region where the recess is located, so that the subsequent film layer can be prepared on a relatively flat surface, thereby ensuring the continuity of the subsequent film layer.

[0053] The material of the first insulating layer 12 can include at least one of silicon oxide and silicon nitride. Silicon oxide and silicon nitride both have high resistivity and can play a good insulating role between adjacent anodes 11. In addition, silicon oxide and silicon nitride also have strong chemical stability and excellent high-temperature stability, and are not easily eroded by moisture, oxygen, and other harmful gases in the environment, and can maintain good insulating properties in a high-temperature environment, which is conducive to prolonging the service life of the device.

[0054] Referring to FIGS. 3 and 4, the second insulating layer 13 can be provided on the first insulating layer 12. The second insulating layer 13 can cover the first insulating layer 12, so that the second insulating layer 13 extends to the edge of the anode 11. The second insulating layer 13 can more clearly define the spatial boundaries of each pixel and help reduce optical and electrical crosstalk between adjacent pixels.

[0055] The second insulating layer 13 can cover at least part of the edge of the anode 11, that is, there is a certain overlap between the second insulating layer 13 and the anode 11. When the second insulating layer 13 is formed, the influence of the deviation caused by the deviation of photolithography on the function of the second insulating layer 13 can be reduced.

[0056] The second insulating layer 13 is arranged around the pixel region 101, and an opening is formed in the second insulating layer 13. The opening of the second insulating layer 13 can define a light-emitting region of the pixel, and the defined light-emitting region can be in any shape such as a rectangle, a polygon, or a circle, which is not limited in the embodiments of the present application.

[0057] With reference to FIGS. 3 and 4, the first connecting electrode 15, the first support layer 16, and the lower partition layer 17 are sequentially arranged on the second insulating layer 13. The lower partition layer 17 covers the first support layer 16, and the lower partition layer 17, the first support layer 16, and the first connecting electrode 15 are all arranged around the pixel region 101. The defined region can be in any shape such as a rectangle, a polygon, or a circle, which is not limited in the embodiments of the present application.

[0058] The edge of the lower partition layer 17 is beyond the edge of the first support layer 16, and the distance between the vertical projection of the edge of the lower partition layer 17 on the substrate 10 and the vertical projection of the edge of the first support layer 16 on the substrate 10 is greater than 0. That is, the length of the lower partition layer 17 in the lateral direction is greater than the length of the first support layer 16 in the lateral direction, or in other words, the projection area of the lower partition layer 17 on the substrate 10 is greater than the projection area of the first support layer 16 on the substrate 10. The opening on the lower partition layer 17 is smaller than the opening on the first support layer 16, so that the opening edge of the lower partition layer 17 protrudes more inwardly than the opening edge of the first support layer 16. The opening edge of the first support layer 16 is recessed relative to the opening edge of the lower partition layer 17 away from the light-emitting region of the pixel, so that the edge portion of the lower partition layer 17 forms a roof structure above the edge of the first support layer 16.

[0059] When the organic light-emitting layer 18 is prepared, the roof structure at the edge of the lower partition layer 17 will shield part of the upper surface of the second insulating layer 13, thereby forming a shielding area below the roof structure at the edge of the lower partition layer 17. Part of the organic light-emitting layer 18 is deposited on the upper surface of the lower partition layer 17, and part of the organic light-emitting layer 18 is deposited on the upper surface of the second insulating layer 13. However, the organic light-emitting layer 18 cannot be deposited in the shielding area, so that the organic light-emitting layer 18 deposited on the upper surface of the lower partition layer 17 and the organic light-emitting layer 18 deposited on the upper surface of the second insulating layer 13 are disconnected at the shielding area.

[0060] In this way, the organic light-emitting layer 18 prepared by the whole layer can be segmented by the lower partition layer 17 and the first support layer 16, and the corresponding organic light-emitting layer 18 can be formed in the plurality of pixel regions 101 without using a traditional fine metal mask (FMM), and the organic light-emitting layer 18 is separated between the plurality of pixel regions 101, so that the manufacturing cost can be reduced.

[0061] Optionally, the material of the lower partition layer 17 can include at least one of silicon oxide and silicon nitride, but is not limited thereto. The silicon oxide and the silicon nitride have strong chemical stability and excellent high-temperature stability, and are not easy to be eroded by moisture, oxygen and other harmful gases in the environment, which is conducive to prolonging the service life of the device.

[0062] As shown in FIGS. 3 and 4, when the cathode 19 is prepared, the cathode 19 can also be disconnected in the shielding area below the eaves structure at the edge of the lower partition layer 17, wherein the principle of cutting off the cathode 19 is the same as that of cutting off the organic light-emitting layer 18, which will not be described herein again.

[0063] In the embodiment, the first connecting electrode 15 is arranged under the first support layer 16, and the edge of the first connecting electrode 15 exceeds the edge of the first support layer 16, that is, the distance between the vertical projection of the edge of the first connecting electrode 15 on the substrate 10 and the vertical projection of the edge of the first support layer 16 on the substrate 10 is greater than 0. As shown in FIGS. 3 and 4, the length of the first connecting electrode 15 in the transverse direction is greater than the length of the first support layer 16 in the transverse direction, or in other words, the projection area of the first connecting electrode 15 on the substrate 10 is greater than the projection area of the first support layer 16 on the substrate 10, so that the edge of the first connecting electrode 15 protrudes more inwardly than the edge of the first support layer 16 to the light-emitting area of the pixel, so that the cathode 19 can be deposited on the first connecting electrode 15 under the shielding of the lower partition layer 17, and the cathodes 19 of the plurality of pixel regions 101 can be electrically connected through the first connecting electrode 15, so that the cathode 19 can be connected with the cathode power supply trace outside the display area, the power supply of the cathode 19 of all the pixel regions 101 is realized, which helps to simplify the wiring structure and reduce the cost.

[0064] In addition, the encapsulation layer 30 is further arranged on the cathode 19, and the encapsulation layer 30 covers the pixel region 101 and the separation structure.

[0065] FIGS. 5-9 are structural schematic diagrams of a method of manufacturing an organic light emitting display device in the related art. As shown in FIGS. 5-9, the pixel region 101 can be divided into a red pixel region 101R, a green pixel region 101G, and a blue pixel region 101B, and the organic light emitting layer 18 can include a red organic light emitting layer 18R disposed in the red pixel region 101R, a green organic light emitting layer 18G disposed in the green pixel region 101G, and a blue organic light emitting layer 18B disposed in the blue pixel region 101B. In manufacturing the organic light emitting display device, a whole layer of the red organic light emitting layer 18R is formed on the anode 11, and a whole layer of the thin film encapsulation layer 50 (TFE) is formed on the red organic light emitting layer 18R, as shown in FIG. 5. Then, the red organic light emitting layer 18R and the thin film encapsulation layer 50 in the green pixel region 101G and the blue pixel region 101B can be removed by an etching process, so that the red organic light emitting layer 18R and the thin film encapsulation layer 50 are formed only in the red pixel region 101R, as shown in FIG. 6.

[0066] Similarly, a whole layer of the green organic light emitting layer 18G is formed, and a whole layer of the thin film encapsulation layer 50 is formed on the green organic light emitting layer 18G, as shown in FIG. 7. Then, the green organic light emitting layer 18G in the red pixel region 101R and the blue pixel region 101B can be removed by an etching process, so that the green organic light emitting layer 18G is formed only in the green pixel region 101G, as shown in FIG. 8.

[0067] Subsequently, the blue organic light emitting layer 18B can be formed in the blue pixel region 101B by using the same method, as shown in FIG. 9.

[0068] Since the partition layer 17 is disposed on the topmost layer, the partition layer 17 is easily affected by physical or chemical actions generated in the etching process when the thin film encapsulation layer 50 and the organic light emitting layer 18 are etched, so that the material of the partition layer 17 reacts or is physically eroded in the etching process, resulting in a change in the shape of the partition layer 17. The change in the shape of the partition layer 17 directly affects the size and position of the shielding region formed by the partition layer 17, and indirectly affects the actual deposition position of the organic light emitting layer 18, so that the organic light emitting layer 18 no longer accurately falls at the preset position, resulting in a large deviation between the final position of the organic light emitting layer 18 and the preset position.

[0069] Meanwhile, during the manufacturing process, as shown in FIG. 6 and FIG. 8, there is a section 18' where the organic light emitting layer 18 is in contact with the outside on the top of the partition layer 17, and the water vapor from the outside will enter the organic light emitting display device along the path formed by the organic light emitting layer 18, thus corroding the organic film layers including the organic light emitting layer 18 from the edge of the organic light emitting display device to the inside, and forming display defects. Especially for the micro display device, the area of the pixel is very small, and the water vapor can easily extend to the pixel area through the section 18' where the organic light emitting layer 18 on the top of the partition layer 17 is in contact with the outside, thus causing display defects of the pixel.

[0070] Based on the above technical problems, as shown in FIG. 3 and FIG. 4, in the present embodiment, the lower partition layer 17 is stacked with the second support layer 22 and the upper partition layer 23, wherein the upper partition layer 23 covers the second support layer 22, and the second support layer 22 and the upper partition layer 23 are both arranged around the pixel area 101, and the defined area can be any shape such as rectangle, polygon or circle, which is not limited in the present embodiment.

[0071] The edge of the upper partition layer 23 exceeds the edge of the second support layer 22, and the distance between the vertical projection of the edge of the upper partition layer 23 on the substrate 10 and the vertical projection of the edge of the second support layer 22 on the substrate 10 is greater than 0, that is, the length of the upper partition layer 23 in the lateral direction is greater than the length of the second support layer 22 in the lateral direction, or in other words, the projection area of the upper partition layer 23 on the substrate 10 is greater than the projection area of the second support layer 22 on the substrate 10, and the opening on the upper partition layer 23 is smaller than the opening on the second support layer 22, so that the opening edge of the upper partition layer 23 protrudes more inwardly than the opening edge of the second support layer 22 to the light emitting area of the pixel, and the opening edge of the second support layer 22 is recessed relative to the opening edge of the upper partition layer 23 to the side away from the light emitting area of the pixel, thus forming a roof structure above the edge of the second support layer 22 with the edge of the upper partition layer 23.

[0072] During the preparation of the organic light emitting layer 18, the roof structure at the edge of the upper partition layer 23 will form a shielding to at least part of the upper surface of the lower partition layer 17, thus forming a shielding area below the roof structure at the edge of the upper partition layer 23, and the organic light emitting layer 18 is partially deposited on the upper surface of the upper partition layer 23 and partially deposited on the upper surface of the lower partition layer 17, but the organic light emitting layer 18 cannot be deposited in the shielding area, thus cutting off the organic light emitting layer 18 at the shielding area, so that the organic light emitting layer 18 deposited on the upper surface of the upper partition layer 23 and the organic light emitting layer 18 deposited on the upper surface of the lower partition layer 17 are disconnected at the shielding area.

[0073] When etching the thin film encapsulation layer 50 and the organic light-emitting layer 18, the second support layer 22 and the upper barrier layer 23 on the lower barrier layer 17 increase the number of material layers that the etching process needs to penetrate, which means that the etching gas or plasma needs to first pass through the upper barrier layer 23 and the second support layer 22 before reaching the lower barrier layer 17. Therefore, the second support layer 22 and the upper barrier layer 23 lengthen the etching path, reduce the time and intensity of the etching gas or plasma directly acting on the lower barrier layer 17, and can form a protective effect on the lower barrier layer 17, thereby reducing the risk of edge damage or shape change of the lower barrier layer 17, helping to maintain the stability of the size and position of the shielding area formed by the lower barrier layer 17, ensuring that the organic light-emitting layer 18 can be accurately deposited at the preset position, and improving the precision and reliability of the manufacturing process.

[0074] Moreover, when preparing the organic light-emitting layer 18, the organic light-emitting layer 18 deposited on the upper barrier layer 23 can be easily removed by a specific process, so that the cross section 18' of the organic light-emitting layer 18 that is in contact with the outside world can be ensured, the path of water vapor from the outside world into the inside is cut off, and the penetration of water vapor along the edge of the organic light-emitting layer 18 into the inside of the pixel area is prevented, thereby avoiding the display defect problem caused thereby.

[0075] At the same time, the organic light-emitting layer 18 is blocked at the shielding area formed by the upper barrier layer 23 and the second support layer 22, which can prevent the further conduction of external water vapor to the organic light-emitting layer 18 deposited on the lower barrier layer 17, thereby avoiding the entry of water vapor along the path formed by the organic light-emitting layer 18 into the inside of the display device, effectively solving the problem of external water vapor eroding the organic film layer from the edge to the inside, and enhancing the water vapor protection capability of the organic light-emitting display device.

[0076] In summary, the organic light emitting display device provided by the embodiment of the present application has the following advantages. The second support layer and the upper partition layer can extend the etching path in the etching process, thereby protecting the lower partition layer and maintaining the stability of the size and position of the shielding area formed by the lower partition layer, so as to ensure that the organic light emitting layer can be accurately deposited at the preset position and improve the precision and reliability of the manufacturing process. In addition, when the organic light emitting layer is prepared, the organic light emitting layer deposited on the upper partition layer can be easily removed through a specific process, so that the cross section of the organic light emitting layer that is in contact with the outside can be ensured, the path for water vapor to invade from the edge of the pixel area into the inside is cut off, and the penetration of water vapor along the edge of the organic light emitting layer into the inside of the pixel area is prevented, thereby avoiding the display defects caused by this. At the same time, the organic light emitting layer is cut off by the upper partition layer and the second support layer, which can prevent the further conduction of external water vapor to the organic light emitting layer deposited on the lower partition layer, thereby avoiding the water vapor entering the inside of the display device along the path formed by the organic light emitting layer, effectively solving the problem of the external water vapor eroding the organic film layer from the edge to the inside, and enhancing the water vapor protection capability of the organic light emitting display device.

[0077] FIG. 10 is a structural schematic diagram of another organic light emitting display device provided by the embodiment of the present application, and FIG. 11 is a sectional structural schematic diagram of FIG. 10 along the direction of B-B'. As shown in FIG. 10 and FIG. 11, optionally, the pixel area 101 further includes the organic light emitting layer 18 disposed above the anode 11. The organic light emitting layer 18 includes organic light emitting layers 18 emitting light of multiple colors. In the direction of row or column, the light emitting colors of the organic light emitting layers 18 in the adjacent pixel areas 101 are different.

[0078] As shown in FIG. 11, the organic light emitting layer 18 is disposed above the anode 11. When the electrons and holes are injected into the organic light emitting layer 18 from the cathode 19 and the anode 11 respectively, the electrons and holes recombine in the organic light emitting layer 18 to release energy and emit light.

[0079] The material of the organic light emitting layer 18 can determine the light emitting color of the organic light emitting layer 18.

[0080] As shown in FIG. 10 and FIG. 11, the pixel region 101 can be divided into a red pixel region 101R, a green pixel region 101G and a blue pixel region 101B, and the organic light-emitting layer 18 can include a red organic light-emitting layer 18R arranged in the red pixel region 101R, a green organic light-emitting layer 18G arranged in the green pixel region 101G and a blue organic light-emitting layer 18B arranged in the blue pixel region 101B to realize color image display, but is not limited thereto. In some embodiments, the organic light-emitting layer 18 can further include a white or other color organic light-emitting layer in addition to the three color organic light-emitting layers described above.

[0081] In the organic light-emitting display device, the organic materials in the red organic light-emitting layer 18R, the green organic light-emitting layer 18G and the blue organic light-emitting layer 18B are usually different. In the related art, in the manufacturing process of the organic light-emitting display device having the light-emitting structure as described above, a fine metal mask (FMM) is usually used to respectively evaporate the red organic light-emitting layer, the green organic light-emitting layer and the blue organic light-emitting layer. Due to the manufacturing deviation, alignment deviation and thermal deformation of the fine metal mask itself, the film forming position of the organic light-emitting layer can deviate greatly from the preset position, and the cost of the fine metal mask is relatively high, resulting in a high manufacturing cost of the organic light-emitting display device. Moreover, due to the process difficulty, the fine metal mask is difficult to achieve the size of the ultra-small metal hollow opening for a high-resolution micro display screen.

[0082] In the present embodiment, the organic light-emitting layer 18 prepared in the whole layer is divided by the first support layer 16, the lower partition layer 17, the second support layer 22 and the upper partition layer 23, and the organic light-emitting layers 18 between adjacent pixels are isolated from each other. The corresponding organic light-emitting layers 18 can be formed in the plurality of pixel regions 101 without using the conventional fine metal mask (FMM), and the organic light-emitting layers 18 are separated between the plurality of pixel regions 101, thereby reducing the manufacturing cost.

[0083] With reference to FIG. 3, FIG. 4 and FIG. 11, optionally, the organic light-emitting display device provided by the present embodiment further includes a cathode 19 arranged above the organic light-emitting layer 18, and the cathode 19 is electrically connected with the first connection electrode 15.

[0084] As shown in FIG. 3, FIG. 4 and FIG. 11, the anode 11 and the cathode 19 are respectively located on the two sides of the organic light-emitting layer 18, and the cathode 19 is used to provide electrons to the organic light-emitting layer 18. When the electrons and the holes are injected into the organic light-emitting layer 18 from the cathode 19 and the anode 11 respectively, the electrons and the holes recombine in the organic light-emitting layer 18 to release energy and emit light.

[0085] In the preparation of the cathode 19, the cathode 19 is also disconnected at the sheltered area under the eaves structure at the edge of the lower partition layer 17 and the sheltered area under the eaves structure at the edge of the upper partition layer 23. If the cathodes 19 of the plurality of pixel regions 101 are insulated, the cathodes 19 of the plurality of pixel regions 101 need to be connected with the cathode power supply wires respectively, which is complex in wiring and increases the cost.

[0086] In the present embodiment, the cathode 19 and the first connecting electrode 15 are electrically connected, so that the cathodes 19 of the plurality of pixel regions 101 can be electrically connected via the first connecting electrode 15, and then the cathode 19 can be connected with the cathode power supply wire outside the display area, so as to realize the power supply of the cathodes 19 of all the pixel regions 101, which helps to simplify the wiring structure and reduce the cost.

[0087] In the preparation of the cathode 19, the cathode 19 can cover the sidewall of the organic light-emitting layer 18 at the disconnected position, so as to form a protective effect on the organic light-emitting layer 18, which helps to prevent the water vapor from the sidewall of the disconnected position of the organic light-emitting layer 18 from invading and eroding the organic light-emitting layer 18.

[0088] Continuing to refer to FIGS. 10 and 11, optionally, the substrate 10 further comprises a non-display region 102, and the organic light-emitting display device further comprises:

[0089] The cathode power supply wire 24 arranged in the non-display region 102.

[0090] The cathode connecting layer 25 electrically connected with the cathode power supply wire 24, the cathode connecting layer 25 is electrically connected with the cathode 19, and the cathode connecting layer 25 and the first connecting electrode 15 are located in the same film layer.

[0091] As shown in FIGS. 10 and 11, the non-display region 102 is located at least one side of the display area (pixel array region for displaying images), and the non-display region 102 is provided with functional circuits and signal wires, such as scan driving circuit, cathode power supply wire, etc.

[0092] The cathode power supply wire 24 arranged in the non-display region 102, the cathode power supply wire 24 is used for transmitting the common voltage provided by the external power supply to the cathodes 19 of the plurality of pixels in the display area.

[0093] The organic light-emitting display device further comprises the cathode connecting layer 25, the cathode connecting layer 25 is electrically connected with the cathode power supply wire 24 and the cathode 19 respectively, and is used for transmitting the common voltage from the cathode power supply wire 24 in the non-display region 102 to the cathode 19.

[0094] As shown in FIG. 11, the cathode connecting layer 25 is located in the same film layer as the first connecting electrode 15, which can reduce the number of metal layers, thereby reducing the production cost and the thickness of the substrate. Meanwhile, the cathode connecting layer 25 can be made of the same material as the first connecting electrode 15, so that the cathode connecting layer 25 and the first connecting electrode 15 can be prepared in the same process, thereby shortening the process time.

[0095] The cathode power supply wire 24 can be located in the same film layer as the anode 11, and the cathode connecting layer 25 and the cathode power supply wire 24 are electrically connected through a through hole in the second insulating layer 13, but are not limited thereto.

[0096] As shown in FIG. 11, the organic light-emitting display device provided by the embodiment of the present application further comprises an encapsulation layer 30 disposed on the cathode 19, and the encapsulation layer 30 covers the cathode 19 and the partition structure.

[0097] FIG. 12 is a schematic diagram of a partial cross-sectional structure of another organic light-emitting display device provided by the embodiment of the present application. As shown in FIG. 12, optionally, the organic light-emitting display device provided by the embodiment of the present application comprises a first sub-encapsulation layer 26 disposed on the cathode 19 and a second sub-encapsulation layer 27 covering the first sub-encapsulation layer 26.

[0098] As shown in FIG. 12, the first sub-encapsulation layer 26 is disposed on the cathode 19, and the first sub-encapsulation layer 26 can cover the cathode 19 and the organic light-emitting layer 18, thereby protecting the cathode 19 and the organic light-emitting layer 18 from the water vapor in the external environment, so as to prevent the organic light-emitting layer 18 from being eroded by the water vapor.

[0099] Optionally, the material of the first sub-encapsulation layer 26 comprises at least one of aluminum oxide and titanium oxide.

[0100] Aluminum oxide (Al2O3) and titanium oxide (TiO2) have good water-oxygen barrier capability, which can effectively isolate the water vapor and oxygen in the external environment. Meanwhile, aluminum oxide (Al2O3) and titanium oxide (TiO2) also have good step coverage, which can uniformly cover the non-planar areas such as the edges, grooves and protrusions of each film layer. The first sub-encapsulation layer 26 adopts at least one of aluminum oxide and titanium oxide, which can ensure that the first sub-encapsulation layer 26 completely covers the cathode 19 and the organic light-emitting layer 18, thereby avoiding the formation of gaps or weak points at the edges of the film layer and damaging the barrier property of the first encapsulation layer 26.

[0101] The first sub-encapsulation layer 26 can be prepared by Atomic Layer Deposition (ALD) film forming technology. The ALD technology can realize self-limiting reaction of precursor gas on the substrate surface by alternately introducing two or more precursor gases, thereby forming a single atomic layer thick deposit. This process can be repeated to accurately control the thickness and quality of the thin film at the atomic layer level.

[0102] The ALD technology can form a uniform, dense and void-free thin film, which can achieve uniform coverage even on complex geometric structures, and can accurately control the thickness of the thin film, thereby meeting the requirements of high step coverage and excellent isolation performance.

[0103] Optionally, the thickness of the first sub-encapsulation layer 26 is greater than or equal to 30 nm.

[0104] By setting the thickness of the first sub-encapsulation layer 26 to 30 nm or more, an effective water vapor and oxygen barrier effect can be achieved. At the same time, the thicker first sub-encapsulation layer 26 can also better resist external impact and stress, reducing the risk of encapsulation failure caused by physical damage.

[0105] The second sub-encapsulation layer 27 can cover the first sub-encapsulation layer 26, thereby further enhancing the overall water and oxygen barrier effect, and forming a double protection effect on the cathode 19 and the organic light-emitting layer 18 to prevent water vapor in the external environment from penetrating into the OLED device and causing erosion of the organic light-emitting layer 18.

[0106] At the same time, the second sub-encapsulation layer 27 can also increase the mechanical strength of the entire encapsulation structure, protect the internal components from external physical impact and scratching, and improve the durability of the organic light-emitting display device.

[0107] Optionally, the material of the second sub-encapsulation layer 27 includes one or more of SIN, SiO and SiON.

[0108] Silicon nitride (SIN), silicon dioxide (SiO) and silicon oxynitride (SiON) can all provide good water vapor and oxygen barrier performance.

[0109] SIN can form a very dense thin film with high barrier ability to water vapor and oxygen, and is very stable in most chemical environments and is not easily reacted with external substances. At the same time, the SIN thin film has high hardness and toughness, and can provide good mechanical protection.

[0110] SiO can also form a dense film, effectively blocking water vapor and oxygen, and is chemically stable in most environments, and has high transparency in the visible range, which can reduce the impact on display effect.

[0111] SiON is a compound of silicon, oxygen and nitrogen, which combines the advantages of silicon oxide and silicon nitride, and can provide good water vapor and oxygen barrier. By adjusting the ratio of oxygen and nitrogen, the stress characteristics of the SiON film can also be adjusted to meet the requirements of different substrates.

[0112] The second sub-encapsulation layer 27 is beneficial to improve the encapsulation performance of the organic light emitting display device by using SIN, SiO or SiON and the like, to ensure that the internal OLED device is not affected by environmental factors, and to prolong the service life and stability of the organic light emitting display device.

[0113] The second sub-encapsulation layer 27 can be prepared by using a chemical vapor deposition (CVD) film forming technology. The CVD technology utilizes chemical reactions to form a solid thin film required by the substrate surface under the interaction of gaseous precursors (reaction gas).

[0114] The CVD technology can realize uniform deposition of high-quality thin films on a large-area substrate, so that the second encapsulation layer 27 can provide good water vapor and oxygen barrier performance.

[0115] FIG. 13 is a schematic view of a partial cross-sectional structure of another organic light emitting display device provided by an embodiment of the present application. As shown in FIG. 13, optionally, the organic light emitting display device provided by an embodiment of the present application further includes a third sub-encapsulation layer 32 disposed on the second sub-encapsulation layer 27.

[0116] As shown in FIG. 13, the third sub-encapsulation layer 32 is disposed on the second sub-encapsulation layer 27, and the third sub-encapsulation layer 32 can cover the second sub-encapsulation layer 27, thereby further enhancing the overall water and oxygen barrier effect, forming a triple protection effect on the cathode 19 and the organic light emitting layer 18, and preventing water vapor in the external environment from penetrating into the OLED device to cause erosion of the organic light emitting layer 18.

[0117] At the same time, the third sub-encapsulation layer 32 can also increase the mechanical strength of the entire encapsulation structure, protect the internal components from external physical impact and scratching, and improve the durability of the organic light emitting display device.

[0118] Optionally, the material, thickness and preparation process of the third sub-encapsulation layer 32 can be the same as those of the first sub-encapsulation layer 26, and the specific schemes can refer to the above embodiments, which will not be described here.

[0119] Continuing to refer to FIG. 3, optionally, the top surface of the lower partition layer 17 has a width smaller than the bottom surface of the lower partition layer 17.

[0120] FIG. 14 is a structural schematic diagram of a vapor deposition process provided by the related art. As shown in FIG. 14, in the vapor deposition process, the evaporation source 40 and the substrate 10 have a certain relative movement. The vapor deposition material is heated and vaporized in the evaporation source 40, sprayed through the nozzle 41, and then evaporated onto the substrate 10 through the opening formed by the lower partition layer 17 to form a corresponding organic light-emitting layer 18. In the vapor deposition process, the vapor deposition material sprayed by the nozzle 41 is in a beam shape, and the lower partition layer 17 will form an obstruction to the vapor deposition material. When the first included angle θ1 between the bottom surface of the lower partition layer 17 and the side surface of the lower partition layer 17 is large (for example, θ1>90°), because the lower partition layer 17 has a certain thickness, the vertex 171 of the lower partition layer 17 close to the evaporation source 40 will cause a large obstruction area 42, and the vapor deposition material cannot be uniformly deposited into a film in the obstruction area 42, resulting in poor vapor deposition.

[0121] Continuing to refer to FIG. 3, in the embodiment, the top surface of the lower partition layer 17 has a width smaller than the bottom surface of the lower partition layer 17. The top surface of the lower partition layer 17 refers to the surface of the lower partition layer 17 away from the substrate 10, and the bottom surface of the lower partition layer 17 refers to the surface of the lower partition layer 17 close to the substrate 10. As shown in FIG. 3, the length of the bottom surface of the lower partition layer 17 in the transverse direction is greater than the length of the top surface of the lower partition layer 17 in the transverse direction, or in other words, the projection area of the bottom surface of the lower partition layer 17 on the substrate 10 is greater than the projection area of the top surface of the lower partition layer 17 on the substrate 10. At this time, the first included angle θ1 between the bottom surface of the lower partition layer 17 and the side surface of the lower partition layer 17 is less than 90°.

[0122] FIG. 15 is a structural schematic diagram of another vapor deposition process provided by the embodiment of the present application. As shown in FIG. 15, when the first included angle θ1 between the bottom surface of the lower partition layer 17 and the side surface of the lower partition layer 17 is small, the obstruction of the lower partition layer 17 to the vapor deposition material can be reduced, so that more vapor deposition material can pass through the opening formed by the lower partition layer 17, thereby increasing the area of the organic light-emitting layer 18 on which the vapor deposition material is vapor deposited onto the substrate 10, so that the coverage area of the organic light-emitting layer 18 is closer to the designed area pattern, and the vapor deposition precision of the organic light-emitting layer 18 is improved.

[0123] Continuing to refer to FIG. 3, optionally, the bottom surface of the lower partition layer 17 and the side surface of the lower partition layer 17 have a first included angle θ1, the first included angle θ1 is greater than or equal to 45° and less than or equal to 90°.

[0124] The top surface width of the lower partition layer 17 is a design value determined in advance according to requirements. The smaller the first included angle θ1 between the bottom surface of the lower partition layer 17 and the side surface of the lower partition layer 17, the greater the width of the bottom surface of the lower partition layer 17, and the greater the overall width of the lower partition layer 17. When the organic light-emitting layer 18 is prepared, the lower partition layer 17 will shield a larger area of the material of the organic light-emitting layer 18, thereby reducing the coverage area of the organic light-emitting layer 18 in the pixel area 101, reducing the area of the organic light-emitting layer 18 that can effectively emit light, and reducing the portion actually used for light emission in the pixel area 101, thereby affecting the overall brightness and energy efficiency of the display device.

[0125] In the present embodiment, the first included angle θ1 between the bottom surface of the lower partition layer 17 and the side surface of the lower partition layer 17 is greater than or equal to 45°, so as to avoid that the overall width of the lower partition layer 17 is too large due to the first included angle θ1 being too small, thereby ensuring that the overall width of the lower partition layer 17 is small, and when the organic light-emitting layer 18 is prepared, the shielding area of the lower partition layer 17 to the material of the organic light-emitting layer 18 can be reduced, the coverage area of the organic light-emitting layer 18 in the pixel area 101 can be increased, the area of the organic light-emitting layer 18 that can effectively emit light can be increased, and the overall brightness and energy efficiency of the display device can be improved.

[0126] Meanwhile, if the first included angle θ1 between the bottom surface of the lower partition layer 17 and the side surface of the lower partition layer 17 is greater than 90°, in the process of preparing the lower partition layer 17, a lateral etching technology needs to be used, wherein the lateral etching refers to etching on the side surface of the material to form a non-vertical side wall, which has high process complexity and is not easy to implement.

[0127] Therefore, in the present embodiment, by setting the first included angle θ1 between the bottom surface of the lower partition layer 17 and the side surface of the lower partition layer 17 to be less than or equal to 90°, the difficulty of the preparation process is reduced, and it is easy to implement.

[0128] Continuing to refer to FIG. 3, optionally, the first included angle θ1 is less than or equal to the evaporation angle α.

[0129] As shown in FIGS. 14 and 15, the evaporation angle α can be the maximum divergence angle of the vaporized evaporation material after being limited by the angle limiting plate 43 after being sprayed from the nozzle 41. In the present embodiment, the first included angle θ1 between the bottom surface of the lower partition layer 17 and the side surface of the lower partition layer 17 is set to be less than or equal to the evaporation angle α, so that the first included angle θ1 has a smaller angle range, and even the evaporation material with the maximum divergence angle will not be shielded by the vertex 171 close to the evaporation source 40 side of the lower partition layer 17, thereby increasing the area of the organic light-emitting layer 18 on the substrate 10 to which the evaporation material is evaporated, so that the coverage area of the organic light-emitting layer 18 is closer to the designed area pattern, and the evaporation precision of the organic light-emitting layer 18 is further improved.

[0130] Referring again to Figure 15, optionally, the evaporation angle α is the angle between the center of the evaporation source 40 and the angle limiting plate 43 during the vapor deposition process of the organic light-emitting layer 18.

[0131] As shown in Figure 15, an angle limiting plate 43 is used to limit the evaporation angle α of the vapor deposition material ejected from the nozzle 41. The angle limiting plate 43 defines the boundary of the evaporation angle. The center of the evaporation source 40 refers to the ejection position of the vapor deposition material. The angle between the center of the evaporation source 40 and the angle limiting plate 43 is the angle between the central axis O of the evaporation source 40 and the line connecting the center of the evaporation source 40 and the edge of the angle limiting plate 43, i.e., the evaporation angle α. Under the action of the angle limiting plates 43 on both sides, the sectional fan-shaped angle formed by the vapor deposition material ejected from the evaporation source 40 is 2*α.

[0132] The evaporation area and evaporation position of the organic light-emitting layer 18 formed by the evaporation source 40 on the substrate 10 can be controlled by adjusting the spacing between the two angle limiting plates 43 or the height of the angle limiting plates 43.

[0133] Referring again to Figure 3, optionally, the top width of the upper partition layer 23 is smaller than the bottom width of the upper partition layer 23.

[0134] Similar to the principle described in the above embodiments, if the second included angle θ2 between the bottom surface and the side surface of the upper partition layer 23 facing the substrate 10 is large (for example, θ2 > 90°), since the upper partition layer 23 has a certain thickness, the vertex of the upper partition layer 23 near the evaporation source will cause a large shading area. The vapor deposition material cannot be uniformly deposited in the shading area, resulting in poor vapor deposition.

[0135] Referring again to Figure 3, in this embodiment, the top surface width of the upper partition layer 23 is set to be smaller than the bottom surface width of the upper partition layer 23. The top surface of the upper partition layer 23 refers to the surface of the upper partition layer 23 away from the substrate 10, and the bottom surface of the upper partition layer 23 refers to the surface of the upper partition layer 23 close to the substrate 10. As shown in Figure 3, the length of the bottom surface of the upper partition layer 23 in the lateral direction is greater than the length of the top surface of the upper partition layer 23 in the lateral direction. In other words, the projected area of ​​the bottom surface of the upper partition layer 23 on the substrate 10 is greater than the projected area of ​​the top surface of the upper partition layer 23 on the substrate 10. At this time, the second included angle θ2 between the bottom surface and the side surface of the upper partition layer 23 is less than 90°, that is, there is a small second included angle θ2 between the bottom surface and the side surface of the upper partition layer 23. This can reduce the obstruction of the vapor-deposited material by the upper partition layer 23, allowing more vapor-deposited material to pass through the opening formed by the upper partition layer 23. This can increase the area of ​​the vapor-deposited material deposited on the organic light-emitting layer 18 on the substrate 10, making the coverage area of ​​the organic light-emitting layer 18 closer to the designed area pattern, and improving the vapor deposition accuracy of the organic light-emitting layer 18.

[0136] Referring again to Figure 3, optionally, there is a second included angle θ2 between the bottom surface of the upper partition layer 23 and the side surface of the upper partition layer 23, wherein the second included angle θ2 is greater than or equal to 45° and less than or equal to 90°.

[0137] The top width of the upper partition layer 23 is a pre-determined design value based on requirements. The smaller the second included angle θ2 between the bottom surface and the side surface of the upper partition layer 23, the larger the bottom width of the upper partition layer 23 will be, and the larger the overall width of the upper partition layer 23 will be. Therefore, when preparing the organic light-emitting layer 18, the upper partition layer 23 will form a large area of ​​shielding on the material of the organic light-emitting layer 18, thereby reducing the coverage area of ​​the organic light-emitting layer 18 in the pixel area 101. As a result, the area in which the organic light-emitting layer 18 can effectively emit light is reduced, that is, the part actually used for light emission in the pixel area 101 becomes smaller, affecting the overall brightness and energy efficiency of the display device.

[0138] In this embodiment, the second included angle θ2 between the bottom surface and the side surface of the upper partition layer 23 is set to be greater than or equal to 45°, so as to avoid the second included angle θ2 being too small and the overall width of the upper partition layer 23 being too large. This ensures that the overall width of the upper partition layer 23 is small. When preparing the organic light-emitting layer 18, the occlusion area of ​​the upper partition layer 23 on the material of the organic light-emitting layer 18 can be reduced, the coverage area of ​​the organic light-emitting layer 18 in the pixel area 101 can be increased, the area where the organic light-emitting layer 18 can effectively emit light can be increased, and the overall brightness and energy efficiency of the display device can be improved.

[0139] Meanwhile, if the second included angle θ2 between the bottom surface of the upper partition layer 23 and the side surface of the upper partition layer 23 is greater than 90°, then a lateral etching technique needs to be used in the process of preparing the upper partition layer 23. Lateral etching refers to etching on the side surface of the material to form a non-vertical sidewall, which has a high process complexity and is not easy to achieve.

[0140] Therefore, in this embodiment, by setting the second included angle θ2 between the bottom surface of the upper partition layer 23 and the side surface of the upper partition layer 23 to be less than or equal to 90°, the manufacturing process difficulty is reduced and it is easy to implement.

[0141] Referring again to Figure 3, optionally, the edge of the lower partition layer 17 extends beyond the edge of the first support layer 16 by a width greater than or equal to 0.1 μm.

[0142] As shown in Figure 3, along the horizontal direction, the edge of the lower partition layer 17 extends beyond the edge of the first support layer 16 by a width of L1. In other words, when multiple pixel arrays are arranged, the shortest distance between the edge of the lower partition layer 17 and the edge of the first support layer 16 in the row or column direction is L1.

[0143] If L1 is too small, the depth of the recess of the edge of the first support layer 16 relative to the edge of the lower partition layer 17 toward the light-emitting area away from the pixel will be too shallow, which will cause the organic light-emitting layer 18 to climb along the side wall of the first support layer 16 to the side wall of the lower partition layer 17, thus failing to ensure that the organic light-emitting layer 18 is disconnected at the recess.

[0144] In this embodiment, setting L1≥0.1μm can prevent the width L1 of the edge of the lower partition layer 17 extending beyond the edge of the first support layer 16 from being too small, that is, prevent the edge of the first support layer 16 from being recessed too shallowly relative to the edge of the lower partition layer 17 towards the light-emitting area away from the pixel, thereby ensuring that there is enough space for the organic light-emitting layer 18 to break at the recess.

[0145] The value of the width L1 of the lower partition layer 17 extending beyond the edge of the first support layer 16 can be set according to actual needs, and this embodiment does not limit it.

[0146] Optionally, the thickness of the lower partition layer 17 is greater than or equal to 50 nm.

[0147] By setting the thickness of the lower partition layer 17 to be greater than or equal to 50 nm, the strength of the lower partition layer 17 structure is ensured, thereby reducing the risk of edge damage or shape change of the lower partition layer 17. This helps to maintain the stability of the size and position of the shielding area formed by the lower partition layer 17, ensuring that the organic light-emitting layer 18 can be accurately deposited at the preset position, and improving the accuracy and reliability of the manufacturing process.

[0148] Optionally, the material of the lower partition layer 17 includes one or more of SiO, SiN, ITO and TiN.

[0149] Silicon oxide (SiO), silicon nitride (SiN), indium tin oxide (ITO), and titanium nitride (TiN) all have high strength. Using these materials for the lower partition layer 17 helps reduce the risk of edge damage or shape changes in the lower partition layer 17, helps maintain the stability of the size and position of the shielding area formed by the lower partition layer 17, and ensures that the organic light-emitting layer 18 can be accurately deposited at the preset position, thereby improving the accuracy and reliability of the manufacturing process.

[0150] Referring again to Figure 3, optionally, the pixel region 101 also includes an organic light-emitting layer 18 disposed on the anode 11 and a cathode 19 disposed on the organic light-emitting layer 18, and the thickness of the second support layer 22 is greater than the sum of the thicknesses of the organic light-emitting layer 18 and the cathode 19.

[0151] By setting the thickness of the second support layer 22 to be greater than the sum of the thicknesses of the organic light-emitting layer 18 and the cathode 19, a sufficient height difference can be made between the bottom surface of the upper partition layer 23 and the top surface of the lower partition layer 17. This ensures that the organic light-emitting layer 18 deposited on the upper surface of the upper partition layer 23 and the organic light-emitting layer 18 deposited on the upper surface of the lower partition layer 17 are disconnected. At the same time, it ensures that the cathode 19 deposited on the upper surface of the upper partition layer 23 and the cathode 19 deposited on the upper surface of the lower partition layer 17 are disconnected. This helps to cut off the path for water vapor to penetrate into the display device along the organic light-emitting layer 18 and the cathode 19, thereby improving the problem of poor display.

[0152] Optionally, the thickness of the second support layer 22 is 200nm to 500nm.

[0153] By setting the thickness of the second support layer 22 to be greater than or equal to 200nm, a sufficient height difference can be made between the bottom surface of the upper partition layer 23 and the top surface of the lower partition layer 17, thereby ensuring that the organic light-emitting layer 18 deposited on the upper surface of the upper partition layer 23 and the organic light-emitting layer 18 deposited on the upper surface of the lower partition layer 17 are disconnected. This helps to cut off the path of water vapor penetrating into the interior of the display device along the organic light-emitting layer 18, thus improving the problem of poor display.

[0154] Meanwhile, setting the thickness of the second support layer 22 to be less than or equal to 500nm will not increase the thickness of the organic light-emitting display device too much, which is conducive to realizing the thin and light design of the organic light-emitting display device. At the same time, the thinner second support layer 22 means that less material is used in the manufacturing process, which helps to reduce costs.

[0155] Optionally, the material of the second support layer 22 includes one or more of SiN, SiO, ITO, Ti and Al.

[0156] Silicon nitride (SIN) possesses excellent chemical stability, high hardness, and good thermal stability. When used in the second support layer 22, it provides good mechanical support and offers excellent barrier properties against moisture and oxygen.

[0157] Silicon oxide (SiO) is also a highly stable material with good light transmittance, and its use in the second support layer 22 can effectively isolate electrons and water vapor.

[0158] Indium tin oxide (ITO) has transparent conductive properties and is used in the second support layer 22, which enables the cathodes 19 of multiple pixel regions 101 to be electrically connected through the second support layer 22, thereby ensuring the electrical connection performance between the cathodes 19 of multiple pixel regions 101.

[0159] Titanium (Ti) has high hardness and good corrosion resistance, and its use in the second support layer 22 can provide excellent mechanical strength and stability.

[0160] Aluminum (Al) is a commonly used conductor material. When used in the second support layer 22, it enables the cathodes 19 of multiple pixel regions 101 to be electrically connected via the second support layer 22, thereby ensuring the electrical connection performance between the cathodes 19 of multiple pixel regions 101. At the same time, aluminum (Al) also has a relatively low cost.

[0161] Figure 16 is a partial cross-sectional structural schematic diagram of another organic light-emitting display device provided in the embodiment of this application. As shown in Figure 16, optionally, the material of the second support layer 22 is a conductive material, and the pixel area 101 also includes an organic light-emitting layer 18 disposed on the anode 11. The organic light-emitting display device also includes a cathode 19 disposed on the organic light-emitting layer 18, and the cathode 19 and the second support layer 22 are electrically connected.

[0162] As shown in Figure 16, by setting the material of the second support layer 22 to be a conductive material, the cathodes 19 of multiple pixel areas 101 can be electrically connected through the second support layer 22. This allows the cathodes 19 to be connected to the cathode power supply lines outside the display area, thereby enabling power supply to the cathodes 19 of all pixel areas 101. This helps to simplify the wiring structure and reduce costs.

[0163] At this time, the material of the second support layer 22 may include materials with good conductivity such as ITO, Ti and Al, which helps to reduce ohmic loss and suppress the decrease of potential on the cathode 19.

[0164] In other embodiments, the second support layer 22 may also be made of other metallic materials to achieve good conductivity, and this application does not limit this.

[0165] Referring again to Figure 16, optionally, the material of the first support layer 16 is an insulating material, and the width of the edge of the lower partition layer 17 extending beyond the edge of the first support layer 16 is less than or equal to 0.3 μm.

[0166] As shown in Figure 16, in the horizontal direction, the edge of the lower partition layer 17 extends beyond the edge of the first support layer 16 by a width of L1. In other words, when multiple pixel arrays are arranged, the shortest distance between the edge of the lower partition layer 17 and the edge of the first support layer 16 in the row or column direction is L1.

[0167] When the material of the first support layer 16 is an insulating material, the cathodes 19 of multiple pixel regions 101 cannot be electrically connected through the second support layer 22. In this case, the cathodes 19 of multiple pixel regions 101 need to climb along the sidewall of the first support layer 16 to the sidewall of the second support layer 22 so that the cathodes 19 of all pixel regions 101 can be electrically connected through the second support layer 22.

[0168] If L1 is too large, the edge of the first support layer 16 will be recessed to a greater depth relative to the edge of the lower partition layer 17 towards the light-emitting area away from the pixel, which will cause the cathode 19 to break at the recess.

[0169] As shown in Figure 16, in this embodiment, setting L1≤0.3μm can make the width L1 of the edge of the lower partition layer 17 extending beyond the edge of the first support layer 16 smaller, avoiding the edge of the first support layer 16 being recessed too deeply relative to the edge of the lower partition layer 17 towards the light-emitting area away from the pixel. This allows the cathode 19 to climb along the sidewall of the first support layer 16 to the sidewall of the second support layer 22, so that the cathode 19 of all pixel areas 101 can be electrically connected through the second support layer 22.

[0170] The value of the width L1 by which the edge of the lower partition layer 17 extends beyond the edge of the first support layer 16 can be set according to actual needs, and this embodiment does not limit this.

[0171] Figure 17 is a partial cross-sectional structural schematic diagram of another organic light-emitting display device provided in the embodiment of this application. As shown in Figure 17, optionally, the material of the first support layer 16 is a conductive material, and the pixel area 101 also includes an organic light-emitting layer 18 disposed on the anode 11 and a cathode 19 disposed on the organic light-emitting layer 18. The cathode 19 and the first support layer 16 are electrically connected.

[0172] As shown in Figure 17, by setting the material of the first support layer 16 to be a conductive material, the cathodes 19 of multiple pixel regions 101 can also be electrically connected through the first support layer 16. This can effectively reduce the transmission resistance between the cathodes 19 of multiple pixel regions 101, reduce ohmic losses, thereby suppressing the decrease in potential on the cathode 19, which helps to ensure that each pixel obtains a more consistent cathode 19 voltage, and is beneficial to improving display uniformity and energy efficiency.

[0173] The material of the first support layer 16 may include one or more of aluminum (Al), molybdenum (Mo), and titanium (Ti). Al, Mo, and Ti have high electrical conductivity. Using metallic materials such as Al, Mo, or Ti for the first support layer 16 helps to reduce ohmic losses and suppress the decrease in potential on the cathode 19.

[0174] In other embodiments, the first support layer 16 may also be made of other metallic materials to achieve good conductivity, and this application does not limit this.

[0175] Optionally, the thickness of the upper partition layer 23 is greater than or equal to 50 nm.

[0176] By setting the thickness of the upper partition layer 23 to be greater than or equal to 50 nm, the strength of the upper partition layer 23 structure can be ensured, thereby reducing the risk of edge damage or shape change of the upper partition layer 23. This helps to maintain the stability of the size and position of the shielding area formed by the upper partition layer 23, ensuring that the organic light-emitting layer 18 can be accurately deposited at the preset position, and improving the accuracy and reliability of the manufacturing process.

[0177] Referring again to Figure 3, optionally, the edge of the upper partition layer 23 extends beyond the edge of the second support layer 22 by a width greater than or equal to 0.1 μm.

[0178] As shown in Figure 3, along the horizontal direction, the edge of the upper partition layer 23 extends beyond the edge of the second support layer 22 by a width of L2. In other words, when multiple pixel arrays are arranged, the shortest distance between the edge of the upper partition layer 23 and the edge of the second support layer 22 in the row or column direction is L2.

[0179] If L2 is too small, the depth of the recess of the edge of the second support layer 22 relative to the edge of the upper partition layer 23 toward the light-emitting area away from the pixel will be too shallow, which will cause the organic light-emitting layer 18 to climb along the sidewall of the second support layer 22 to the sidewall of the upper partition layer 23, thus failing to ensure that the organic light-emitting layer 18 is disconnected at the recess.

[0180] In this embodiment, setting L2≥0.1μm can prevent the width L2 of the edge of the upper partition layer 23 extending beyond the edge of the second support layer 22 from being too small. That is, it can prevent the edge of the second support layer 22 from being recessed too shallowly relative to the edge of the upper partition layer 23 towards the light-emitting area away from the pixel, thereby ensuring that there is enough space for the organic light-emitting layer 18 to break at the recess.

[0181] The value of the width L2 of the edge of the upper partition layer 23 extending beyond the edge of the second support layer 22 can be set according to actual needs, and this embodiment does not limit it.

[0182] Optionally, the material of the upper partition layer 23 includes one or more of SiO, SiN, ITO and TiN.

[0183] Silicon oxide (SiO), silicon nitride (SiN), indium tin oxide (ITO), and titanium nitride (TiN) all have high strength. Using these materials for the upper partition layer 23 helps reduce the risk of edge damage or shape changes in the upper partition layer 23, helps maintain the stability of the size and position of the shielding area formed by the upper partition layer 23, and ensures that the organic light-emitting layer 18 can be accurately deposited at the preset position, thereby improving the accuracy and reliability of the manufacturing process.

[0184] Figure 18 is a partial cross-sectional structural schematic diagram of another organic light-emitting display device provided in the embodiment of this application. As shown in Figure 18, optionally, the organic light-emitting display device provided in the embodiment of this application further includes an etching barrier layer 29 disposed on the upper partition layer 23, and the material of the etching barrier layer 29 is different from the material of the upper partition layer 23.

[0185] As shown in Figure 18, an etching barrier layer 29 is provided on the upper partition layer 23. The etching barrier layer 29 is used to protect the upper partition layer 23 below it so that the upper partition layer 23 is protected from the erosion of the etching gas or solution used in the etching process. This ensures that the shape and size of the upper partition layer 23 can be maintained when other layers such as the organic light-emitting layer 18 are patterned or etched, and avoids unnecessary damage or shape change to the upper partition layer 23.

[0186] The etching barrier layer 29 is made of a different material than the upper partition layer 23, so that the material of the etching barrier layer 29 is less likely to be etched by the etching gas or solution used in the etching process.

[0187] The vertical projection of the etching barrier layer 29 on the substrate 10 covers the vertical projection of the top surface of the upper partition layer 23 on the substrate 10, so as to ensure that the upper partition layer 23 is protected to the maximum extent during the etching process. The top surface of the upper partition layer 23 refers to the surface of the upper partition layer 23 away from the substrate 10.

[0188] Optionally, the vertical projection of the etch barrier layer 29 on the substrate 10 coincides with the vertical projection of the top surface of the upper partition layer 23 on the substrate 10. This can ensure that the upper partition layer 23 is protected to the maximum extent during the etching process, while preventing the etch barrier layer 29 from affecting the deposition position of the organic light-emitting layer 18.

[0189] Optionally, the material of the etch barrier layer 29 includes at least one of ITO and TiN.

[0190] Indium tin oxide (ITO) has good chemical stability. The etching barrier layer 29 is made of indium tin oxide (ITO) material, which can play a good blocking effect in wet etching process by taking advantage of its chemical stability.

[0191] For example, during the etching of the organic light-emitting layer 18 by wet etching process, the etching barrier layer 29 made of indium tin oxide (ITO) can provide good protection for the upper isolation layer 23.

[0192] Titanium nitride (TiN) exhibits excellent thermal and chemical stability, effectively blocking etching gases used in various dry etching processes, especially plasma etching, where it demonstrates a good barrier effect. The etching barrier layer 29, made of titanium nitride (TiN), provides excellent barrier properties in dry etching processes.

[0193] For example, during the etching of the second packaging layer 27 using a dry etching process, the etching barrier layer 29 made of titanium nitride (TiN) can provide good protection for the upper isolation layer 23.

[0194] Optionally, the material of the first support layer 16 is different from that of the lower partition layer 17; and / or, the material of the second support layer 22 is different from that of the upper partition layer 23.

[0195] By setting the first support layer 16 and the lower partition layer 17 to be composed of different materials, etching selectivity can be achieved. That is, by using materials that can achieve etching selectivity, it is easier to process the first support layer 16 and the lower partition layer 17 into the desired shape.

[0196] As shown in Figure 3, by way of example, when forming the first support layer 16 and the lower partition layer 17, a suitable etching gas or liquid can be selected for the first support layer 16 so that the etching rate of the lower partition layer 17 is less than the etching rate of the first support layer 16, so that the sidewall of the first support layer 16 is preferentially etched, thereby forming an inwardly recessed notch on the sidewall of the first support layer 16, so that the edge of the lower partition layer 17 extends beyond the edge of the first support layer 16.

[0197] For example, the material of the first support layer 16 can be titanium (Ti), and the material of the lower partition layer 17 can be silicon oxide (SiO). A suitable etching solution can be selected for titanium (Ti), and the sidewalls of the first support layer 16 can be etched by a wet etching process. The etching rate of the first support layer 16 is much greater than that of the lower partition layer 17, so that the sidewalls of the first support layer 16 are preferentially etched, thereby forming an inwardly recessed notch on the sidewalls of the first support layer 16, so that the edge of the lower partition layer 17 extends beyond the edge of the first support layer 16, but is not limited to this.

[0198] Similarly, by setting the second support layer 22 and the upper partition layer 23 to be composed of different materials, etching selectivity can be achieved. That is, by using materials that can achieve etching selectivity, it is easier to process the second support layer 22 and the upper partition layer 23 into the desired shape.

[0199] As shown in Figure 3, by way of example, when forming the second support layer 22 and the upper partition layer 23, a suitable etching gas or liquid can be selected for the second support layer 22 so that the etching rate of the upper partition layer 23 is less than the etching rate of the second support layer 22, so that the sidewall of the second support layer 22 is preferentially etched, thereby forming an inwardly recessed notch on the sidewall of the second support layer 22, so that the edge of the upper partition layer 23 extends beyond the edge of the second support layer 22.

[0200] For example, the material of the second support layer 22 can be silicon nitride (SIN), and the material of the upper partition layer 23 can be silicon oxide (SiO). A suitable etching gas (such as sulfur hexafluoride (SF6) gas) can be selected for silicon nitride (SIN). The sidewalls of the second support layer 22 are etched by a dry etching process. The etching rate of the etching gas on the second support layer 22 is much greater than that on the upper partition layer 23, so that the sidewalls of the second support layer 22 are preferentially etched, thereby forming an inwardly recessed notch on the sidewalls of the second support layer 22. This allows the edge of the upper partition layer 23 to extend beyond the edge of the second support layer 22, but it is not limited to this.

[0201] Figure 19 is a partial cross-sectional structural schematic diagram of another organic light-emitting display device provided in the embodiment of this application. As shown in Figure 20, optionally, the organic light-emitting display device provided in the embodiment of this application further includes a light-shielding layer 30 disposed on the side of the first support layer 16 away from the substrate 10. The vertical projection of the light-shielding layer 30 on the substrate 10 covers the vertical projection of the lower partition layer 17 on the substrate.

[0202] When the organic light-emitting layer 18 is prepared, organic light-emitting layer material is deposited on the lower partition layer 17. This part of the organic light-emitting layer material will form a reflective interface and constitute an optical waveguide, thereby reflecting the light emitted by one pixel to the adjacent pixel, resulting in optical crosstalk and affecting the contrast and color purity of the display.

[0203] Meanwhile, the first connecting electrode 15 located on the side of the lower partition layer 17 near the substrate 10 is usually a metal film layer with high light reflectivity. In the process of fabricating the first support layer 16 and the subsequent photolithography process, the reflection of the first connecting electrode 15 will interfere with the accurate exposure of the photoresist, resulting in a reduction in etching accuracy.

[0204] Based on the aforementioned technical problems, in this embodiment, a light-shielding layer 30 is provided on the side of the first support layer 16 facing away from the substrate 10, and the vertical projection of the light-shielding layer 30 on the substrate 10 covers the vertical projection of the lower partition layer 17 on the substrate 10. On the one hand, the light-shielding layer 30 can block the organic light-emitting layer material deposited above the lower partition layer 17, preventing the light emitted by one pixel from being reflected by the organic light-emitting layer material above the lower partition layer 17 to adjacent pixels, thereby reducing unnecessary reflections, improving light crosstalk, and enhancing display quality. On the other hand, the light-shielding layer 30 can also block the first connecting electrode 15, preventing reflection from the first connecting electrode 15 during the photolithography process and interfering with the precise exposure of the photoresist, thereby improving etching accuracy.

[0205] Referring again to Figure 19, optionally, the vertical projection of the light-shielding layer 30 on the substrate 10 and the vertical projection of the lower partition layer 17 on the substrate 10 coincide. This allows the patterning of the light-shielding layer 30 and the lower partition layer 17 to be completed simultaneously in the same etching process, thereby shortening the process cycle and reducing manufacturing costs. Simultaneously patterning the light-shielding layer 30 and the lower partition layer 17 in the same process also ensures precise alignment between them, reducing alignment errors and ensuring that the light-shielding layer 30 can more effectively cover the lower partition layer 17. This prevents light emitted from one pixel from being reflected by the organic light-emitting layer material above the lower partition layer 17 to adjacent pixels, improving crosstalk and enhancing display quality.

[0206] Referring again to Figure 19, optionally, the light-shielding layer 30 is located between the lower partition layer 17 and the first support layer 16 to shorten the distance between the light-shielding layer 30 and the first connecting electrode 15. This allows the light-shielding layer 30 to more effectively shield the first connecting electrode 15, thereby helping to prevent the exposure beam reflected by the first connecting electrode 15 from escaping through the gap between the first connecting electrode 15 and the light-shielding layer 30 during the photolithography process. This allows the light-shielding layer 30 to more effectively suppress or absorb the exposure beam reflected back from the first connecting electrode 15, avoiding interference from the reflection of the first connecting electrode 15 with the precise exposure of the photoresist and improving etching accuracy.

[0207] Furthermore, as shown in Figure 19, by placing the light-shielding layer 30 on the surface of the lower partition layer 17 near the substrate 10, the shape of the surface of the lower partition layer 17 away from the substrate 10 can be designed without affecting the morphology of the light-shielding layer 30. This is beneficial for improving the evaporation accuracy of the organic light-emitting layer 18. At the same time, it is also convenient to complete the patterning of the light-shielding layer 30 and the lower partition layer 17 in the same etching process, thereby shortening the process cycle and reducing manufacturing costs.

[0208] In some embodiments, the light-shielding layer 30 may also be located on the side of the lower partition layer 17 away from the substrate 10. For example, the light-shielding layer 30 is disposed on the surface of the lower partition layer 17 away from the substrate 10. This is beneficial for the light-shielding layer 30 to more effectively block the light emitted from the lower pixels, and prevent these lights from entering the lower partition layer 17 and being reflected back to the adjacent pixels by the organic light-emitting layer material on the lower partition layer 17. This can reduce the light crosstalk phenomenon between pixels and improve the display quality and color.

[0209] In other embodiments, a light-shielding layer 30 may be provided between the lower partition layer 17 and the first support layer 16, as well as on the side of the lower partition layer 17 facing away from the substrate 10, to achieve a better light-shielding effect. This application does not limit this aspect.

[0210] Optionally, the light transmittance of the light-shielding layer 30 is less than or equal to 10%, so that the light-shielding layer 30 can block 90% or more of the light from passing through. The low light transmittance of the light-shielding layer 30 can effectively prevent light from the lower light-emitting pixels from penetrating the light-shielding layer 30 and being reflected back to the adjacent pixels by the organic light-emitting layer material on the lower partition layer 17, thereby avoiding light crosstalk between pixels and improving display quality. At the same time, in the photolithography process, the low light transmittance of the light-shielding layer 30 can also effectively prevent the reflection of the first connecting electrode 15 from interfering with the accurate exposure of the photoresist, thereby improving etching accuracy.

[0211] Optionally, the material of the light-shielding layer 30 includes one or more of titanium nitride, silicon carbide, chromium, and black organic materials.

[0212] In one embodiment, the material of the light-shielding layer 30 can be inorganic materials such as titanium nitride (TiN) or silicon carbide (SiC). Both titanium nitride and silicon carbide have low light transmittance, which can effectively block light from passing through. At the same time, both titanium nitride and silicon carbide have high hardness and mechanical strength, which can make the light-shielding layer 30 have good durability and damage resistance.

[0213] In another embodiment, the material of the light-shielding layer 30 can also be a metal material such as chromium (Cr). Chromium (Cr) is a metal material with relatively low light reflectivity, which is easy to deposit and has good anti-oxidation and corrosion resistance, which is beneficial to improving the stability and durability of the light-shielding layer 30.

[0214] In another embodiment, the material of the light-shielding layer 30 can also be a black organic material. Black organic materials typically have a very high light absorption rate, which can effectively absorb light. Furthermore, they are easy to prepare, which helps to reduce costs.

[0215] Optionally, the organic light-emitting display device provided in this application embodiment is a silicon-based micro-OLED display. This device combines silicon-based integrated circuit (CMOS) technology and organic light-emitting diode (OLED) technology to directly integrate an OLED pixel array onto a silicon wafer, forming a micro-display. Silicon-based micro-OLED displays are characterized by their small size, thinness, low power consumption, high brightness, fast response speed, and wide viewing angle, making them suitable for near-eye display devices such as virtual reality (VR), augmented reality (AR) headsets, head-up display (HUD) systems, micro-projectors, and other portable electronic products with stringent requirements for size, weight, and energy consumption.

[0216] In this embodiment, the substrate 10 can be a silicon-based driving backplane. The corresponding organic light-emitting layer 18 can be formed in multiple pixel regions 101 on the substrate 10 by etching process (e.g., photolithography process including exposure and development steps). The process error can be controlled within ±2μm. Compared with the use of traditional fine metal mask (FMM) to form organic light-emitting layer, smaller pixel size and higher resolution can be achieved, and the manufacturing cost is lower.

[0217] Figure 20 is a schematic diagram of a pixel film structure provided in an embodiment of this application. As shown in Figure 20, the organic light-emitting layer 18 is located between the anode 11 and the cathode 19. The organic light-emitting layer 18 includes a first carrier adjustment layer 181, a light-emitting material layer 182, and a second carrier adjustment layer 183 stacked sequentially.

[0218] The first carrier adjustment layer 181 is located between the anode 11 and the light-emitting material layer 182. The first carrier adjustment layer 181 may include at least one of the hole injection layer HIL, the hole transport layer HTL, and the electron blocking layer EBL.

[0219] As shown in Figure 20, the hole injection layer HIL is located on the anode 11 and is used to reduce the energy barrier from the anode 11 to the organic light-emitting layer 18, so that the holes can be transferred from the anode 11 to the hole transport layer HTL more effectively, thereby improving the hole injection efficiency and thus improving the luminous efficiency and brightness of the pixel.

[0220] The hole transport layer HTL is located on the hole injection layer HIL and is used to effectively transport holes injected from the anode 11 to the light-emitting material layer 182, ensuring that holes and electrons in the light-emitting material layer 182 can effectively recombine to generate photons.

[0221] The electron blocking layer (EBL) is located on the hole transport layer (HTL) and is used to prevent electrons from randomly diffusing from the electron transport layer (ETL) to the light-emitting material layer (182), thereby ensuring the recombination of electrons and holes in the light-emitting material layer (182), reducing the recombination of electrons and holes in the non-light-emitting region, and further improving the overall efficiency and lifetime of the device.

[0222] Referring again to FIG20, the second carrier adjustment layer 183 is located between the cathode 19 and the light-emitting material layer 182. The second carrier adjustment layer 183 may include at least one of the hole blocking layer HBL, the electron transport layer ETL, and the electron injection layer EIL.

[0223] As shown in Figure 20, the hole blocking layer HBL is located on the light-emitting material layer 182 and is used to prevent holes from entering the electron transport layer ETL from the anode 11 side, thereby reducing the ineffective recombination of holes and electrons in the non-light-emitting area and improving the overall luminous efficiency of the pixel.

[0224] The electron transport layer (ETL) is located on the hole blocking layer (HBL) and is used to efficiently transport electrons from the cathode 19 to the light-emitting material layer 182, so as to ensure that electrons can be quickly and efficiently transported to the light-emitting material layer 182 and recombine with holes to emit photons.

[0225] The electron injection layer (EIL) is located on the electron transport layer (ETL) and is used to reduce the energy barrier for electrons to be injected from the cathode 19 into the luminescent material layer 182, thereby improving the electron injection efficiency. The electron injection layer (EIL) can ensure good interfacial contact and energy level matching with both the cathode 19 and the electron transport layer (ETL), ensuring that electrons can be easily injected into the luminescent material layer 182 to participate in the luminescence process.

[0226] In other embodiments, the first carrier adjustment layer 181 and the second carrier adjustment layer 183 are not limited to the above structure, and the embodiments of this application do not limit this.

[0227] The organic light-emitting display device provided in this application is formed by first forming organic light-emitting layers of different colors by covering the plurality of pixel areas and the plurality of separating structures, then removing the organic light-emitting layers on the top and side surfaces of the first insulating layer, and then removing the organic light-emitting layers in the pixel areas that do not display that color.

[0228] This application also provides a method for manufacturing an organic light-emitting display device, used to manufacture any of the organic light-emitting display devices provided in the above embodiments. The explanations of the same or corresponding structures and terms as in the above embodiments will not be repeated here.

[0229] Figure 21 is a schematic flowchart of a method for manufacturing an organic light-emitting display device according to an embodiment of this application. The method for manufacturing an organic light-emitting display device according to an embodiment of this application includes:

[0230] Step S1: Provide a substrate, the substrate including a plurality of pixel regions spaced apart, the plurality of pixel regions including pixel regions for displaying different colors;

[0231] Step S2: Form an anode within the plurality of pixel regions;

[0232] Step S3: Form a plurality of partition structures between the anodes, the partition structures including an upper partition layer located on top of them;

[0233] Step S4: Forming organic light-emitting layers that emit different colors, wherein the step of forming any one of the organic light-emitting layers that emits different colors includes:

[0234] Step S41: Form an organic light-emitting material layer, the organic light-emitting material layer covering the plurality of pixel regions and the plurality of separation structures;

[0235] Step S42: Remove the organic light-emitting material layer from the top and side surfaces of the upper partition layer;

[0236] Step S43: Remove the organic light-emitting material layer in the pixel area that does not emit that color, so as to form an organic light-emitting layer in the pixel area that emits that color.

[0237] Referring to Figures 5 to 9, in related technologies, during the manufacturing process, the organic light-emitting layer 18 at the top of the partition layer 17 has a cross-section 18' that contacts the outside. External moisture can enter the organic light-emitting display device along the path formed by the organic light-emitting layer 18, thereby eroding the organic film layer, including the organic light-emitting layer 18, from the edge of the organic light-emitting display device inwards, resulting in display defects. In the manufacturing method of the organic light-emitting display device provided in the embodiment, after forming the organic light-emitting material layer, the organic light-emitting material layer on the top and side surfaces of the upper partition layer is first removed, eliminating the cross-section between the organic light-emitting layer and the outside, cutting off the path between the organic light-emitting layer and the outside, and then etching away the organic light-emitting material layer in the pixel area that does not emit that color. This avoids the moisture erosion problem caused by this path, improving the reliability of the organic light-emitting display device.

[0238] Forming a separation structure between the anodes includes:

[0239] A first insulating layer is formed between the pixel regions;

[0240] A second insulating material layer is formed on the first insulating layer;

[0241] A first connecting electrode material layer is formed on the second insulating material layer;

[0242] The first connecting electrode material layer is etched to form the first connecting electrode;

[0243] A first support material layer, a first partition material layer, a second support material layer, and a second partition material layer are sequentially formed on the first connecting electrode;

[0244] The first support material layer, the first partition material layer, the second support material layer, and the second partition material layer are etched to form the first support layer, the lower partition layer, the second support layer, and the upper partition layer;

[0245] The sidewalls of the first support layer and the second support layer are etched so that the edge of the lower partition layer extends beyond the edge of the first support layer and the edge of the upper partition layer extends beyond the edge of the second support layer;

[0246] The second insulating material layer is etched to form a second insulating layer, which covers the first insulating layer.

[0247] Referring to Figure 22, which is a flowchart illustrating a method for manufacturing an organic light-emitting display device according to an embodiment of this application, and Figures 23-64, which are flowchart illustrating another method for manufacturing an organic light-emitting display device according to an embodiment of this application, the manufacturing method includes:

[0248] S101. A substrate is provided, the substrate including a plurality of pixel regions spaced apart.

[0249] As shown in Figure 23, the substrate 10 can be a driving substrate, and multiple pixel regions 101 arranged in an array are defined on the substrate 10. In the row or column direction, adjacent pixel regions are pixels that emit different colors of light.

[0250] For example, as shown in Figure 23, in the row direction, pixel region 101 can be divided into red pixel region 101R, green pixel region 101G and blue pixel region 101B, but it is not limited to this. In some embodiments, pixel region 101 can also be supplemented with white or other colored pixel regions.

[0251] S102, Form an anode within the pixel area.

[0252] As shown in Figure 24, an anode 11 is formed in the pixel region 101 on the substrate 10. The anodes 11 corresponding to the multiple pixel regions 101 are electrically isolated from each other. The anode 11 serves as an electrode of the pixel and can inject carriers (such as holes) into the pixel under the drive of a positive voltage from an external power supply.

[0253] S103, A first insulating layer is formed between the anodes 11.

[0254] As shown in Figure 25, a first insulating layer 12 is formed between two adjacent anodes 11. The first insulating layer 12 helps to ensure electrical insulation between the two adjacent anodes 11. At the same time, since the anodes 11 have a certain thickness, a pit is formed between the two anodes 11. Filling the space between the two adjacent anodes 11 with the first insulating layer 12 also helps to reduce the height difference between the area where the anodes 11 are located and the area where the pit is located, so that the subsequent film layer can be prepared on a relatively flat surface, thereby ensuring the continuity of the subsequent film layer.

[0255] The material of the first insulating layer 120 may include at least one of silicon oxide and silicon nitride. Both silicon oxide and silicon nitride have high resistivity, which can enable the first insulating layer 12 formed by etching the first insulating layer 120 to play a good insulating role between adjacent anodes 11.

[0256] S104. A second insulating material layer is formed on the first insulating layer.

[0257] As shown in Figure 26, a second insulating material layer 130 is deposited on the first insulating layer 12.

[0258] The material of the second insulating layer 130 may include at least one of silicon oxide (SiO), silicon nitride (SiN), and polycrystalline silicon (Poly-Si), but is not limited thereto.

[0259] S105, A first connecting electrode material layer is formed on the second insulating material layer.

[0260] As shown in Figure 30, a first connecting electrode material layer 150 is deposited on the second insulating material layer 130.

[0261] The first connecting electrode material layer 150 may include one or more of molybdenum (Mo), gold (Au), titanium nitride (TiN), and indium tin oxide (ITO), but is not limited to these.

[0262] S106. Etch the first connecting electrode material layer to form the first connecting electrode.

[0263] As shown in Figures 31-33, the first connecting electrode material layer 150 can be etched by photolithography to form the first connecting electrode 15 surrounding the pixel region 101. The area defined by the opening of the first connecting electrode 15 can be any shape such as rectangle, polygon or circle. This application embodiment does not limit this.

[0264] A second photoresist layer PR2 is coated on the first connection electrode material layer 150, as shown in Figure 31. The second photoresist layer PR2 is exposed using a mask and a light source. After exposure, the second photoresist layer PR2 is treated with a developer to remove the second photoresist layer PR2 located in the pixel region 101, thereby leaving a second photoresist layer PR2 pattern on the substrate corresponding to the pattern of the first connection electrode 15, as shown in Figure 32. The first connection electrode material layer 150 not protected by the second photoresist layer PR2 is removed by chemical or physical methods (such as dry etching or wet etching), thereby forming the first connection electrode 15 with the desired pattern, as shown in Figure 33.

[0265] S107. A first support material layer, a first partition material layer, a second support material layer, and a second partition material layer are sequentially formed on the first connecting electrode.

[0266] As shown in Figure 34, a first support material layer 160, a first partition material layer 170, a second support material layer 220, and a second partition material layer 230 are deposited on the first connecting electrode 15.

[0267] The material of the first support material layer 160 may include one or more of aluminum (Al), molybdenum (Mo) and titanium (Ti), but is not limited to these.

[0268] The material of the first partition material layer 170 may include at least one of silicon oxide and silicon nitride, but is not limited thereto.

[0269] The material of the second support material layer 220 may include one or more of SiN, SiO, ITO, Ti and Al, but is not limited to these.

[0270] The material of the second partition material layer 230 may include one or more of SiO, SiN, ITO and TiN, but is not limited to them.

[0271] S108. Etching the first support material layer, the first partition material layer, the second support material layer, and the second partition material layer forms the first support layer, the lower partition layer, the second support layer, and the upper partition layer.

[0272] As shown in Figures 35-37, the first support material layer 160, the first partition material layer 170, the second support material layer 220, and the second partition material layer 230 can be etched by photolithography to form the first support layer 16, the lower partition layer 17, the second support layer 22, and the upper partition layer 23 located between adjacent pixel regions 101.

[0273] The first support layer 16, the lower partition layer 17, the second support layer 22, and the upper partition layer 23 are all arranged around the pixel area 101. The defined area can be any shape such as a rectangle, polygon, or circle. This embodiment does not limit this.

[0274] In this embodiment, the first support material layer 160, the first partition material layer 170, the second support material layer 220 and the second partition material layer 230 can be etched in the same etching process to form the first support layer 16, the lower partition layer 17, the second support layer 22 and the upper partition layer 23, so as to shorten the process cycle and reduce the manufacturing cost.

[0275] A third photoresist layer PR3 is coated on the second isolation material layer 230, as shown in Figure 35. The third photoresist layer PR3 is exposed using a mask and a light source. After exposure, the third photoresist layer PR3 is treated with a developer to remove the third photoresist layer PR3 located in the pixel region 101, thereby leaving a pattern of the third photoresist layer PR3 on the substrate corresponding to the pattern of the first support layer 16, the lower isolation layer 17, the second support layer 22, and the upper isolation layer 23, as shown in Figure 36. The first support material layer 160, the first isolation material layer 170, the second support material layer 220, and the second isolation material layer 230 that are not protected by the third photoresist layer PR3 are removed by chemical or physical methods (such as dry etching or wet etching), thereby forming the first support layer 16, the lower isolation layer 17, the second support layer 22, and the upper isolation layer 23 with the desired pattern, as shown in Figure 37.

[0276] S109. Etch the sidewalls of the first and second support layers so that the edge of the lower partition layer extends beyond the edge of the first support layer and the edge of the upper partition layer extends beyond the edge of the second support layer.

[0277] As shown in Figure 39, the sidewalls of the first support layer 16 are etched. A suitable etching gas or liquid can be selected for the first support layer 16 so that the etching rate of the first support layer 16 is much greater than the etching rate of the lower partition layer 17. This results in the sidewalls of the first support layer 16 being etched preferentially, causing the sidewalls of the first support layer 16 to be recessed inward, and the edge of the lower partition layer 17 to extend beyond the edge of the first support layer 16.

[0278] At this time, the distance between the vertical projection of the edge of the lower partition layer 17 onto the substrate 10 and the vertical projection of the edge of the first support layer 16 onto the substrate 10 is greater than 0. That is, the length of the lower partition layer 17 in the lateral direction is greater than the length of the first support layer 16 in the lateral direction. In other words, the projected area of ​​the lower partition layer 17 onto the substrate 10 is greater than the projected area of ​​the first support layer 16 onto the substrate 10. The opening on the lower partition layer 17 is smaller than the opening on the first support layer 16, so that the edge of the opening of the lower partition layer 17 protrudes further into the light-emitting area of ​​the pixel than the edge of the opening of the first support layer 16. The edge of the opening of the first support layer 16 is recessed relative to the edge of the lower partition layer 17 towards the side away from the light-emitting area of ​​the pixel. Thus, the edge portion of the lower partition layer 17 forms an eaves structure above the edge of the first support layer 16.

[0279] During the subsequent fabrication of the organic light-emitting layer, a shielding area is formed below the eaves structure at the edge of the lower partition layer 17. The organic light-emitting layer cannot be deposited in this shielding area, thus cutting off the organic light-emitting layer at this shielding area. In this way, the organic light-emitting layer fabricated in the whole layer is divided by the lower partition layer 17 and the first support layer 16. The organic light-emitting layer can be formed in multiple pixel regions 101 without the use of a traditional fine metal mask (FMM), and the organic light-emitting layer is separated between multiple pixel regions 101, thereby reducing manufacturing costs.

[0280] As shown in Figure 38, the sidewalls of the second support layer 22 are etched. A suitable etching gas or liquid can be selected for the second support layer 22 so that the etching rate of the second support layer 22 is much greater than the etching rate of the upper partition layer 23. This results in the sidewalls of the second support layer 22 being etched preferentially, thereby forming an inwardly recessed notch on the sidewalls of the second support layer 22, so that the edge of the upper partition layer 23 extends beyond the edge of the second support layer 22.

[0281] At this time, the distance between the vertical projection of the edge of the upper partition layer 23 on the substrate 10 and the vertical projection of the edge of the second support layer 22 on the substrate 10 is greater than 0. That is, the length of the upper partition layer 23 in the lateral direction is greater than the length of the second support layer 22 in the lateral direction. In other words, the projected area of ​​the upper partition layer 23 on the substrate 10 is greater than the projected area of ​​the second support layer 22 on the substrate 10. The opening on the upper partition layer 23 is smaller than the opening on the second support layer 22, so that the opening edge of the upper partition layer 23 protrudes further into the light-emitting area of ​​the pixel than the opening edge of the second support layer 22. The opening edge of the second support layer 22 is recessed relative to the opening edge of the upper partition layer 23 towards the side away from the light-emitting area of ​​the pixel. Thus, the edge portion of the upper partition layer 23 forms an eaves structure above the edge of the second support layer 22.

[0282] During the subsequent fabrication of the organic light-emitting layer, the eaves structure at the edge of the upper partition layer 23 will block at least part of the upper surface of the lower partition layer 17, thereby forming a blocking area below the eaves structure at the edge of the upper partition layer 23. The organic light-emitting layer is partially deposited on the upper surface of the upper partition layer 23 and partially deposited on the upper surface of the lower partition layer 17, but the organic light-emitting layer cannot be deposited in the blocking area, thereby cutting off the organic light-emitting layer in the blocking area, so that the organic light-emitting layer deposited on the upper surface of the upper partition layer 23 and the organic light-emitting layer deposited on the upper surface of the lower partition layer 17 cannot form a connection in the blocking area and are disconnected.

[0283] When etching the organic light-emitting layer, the second support layer 22 and the upper partition layer 23 above the lower partition layer 17 increase the number of material layers that the etching process needs to penetrate. This means that the etching gas or plasma needs to pass through the upper partition layer 23 and the second support layer 22 before reaching the lower partition layer 17. Therefore, the second support layer 22 and the upper partition layer 23 extend the etching path, reducing the time and intensity of the etching gas or plasma directly acting on the lower partition layer 17. This can protect the lower partition layer 17, thereby reducing the risk of edge damage or shape change of the lower partition layer 17. It also helps to maintain the stability of the size and position of the shielding area formed by the lower partition layer 17, ensuring that the organic light-emitting layer can be accurately deposited at the preset position, and improving the accuracy and reliability of the manufacturing process.

[0284] Furthermore, during the fabrication of the organic light-emitting layer, the organic light-emitting layer deposited on the upper partition layer 23 can be easily removed through a specific process. This ensures that there is no cross-section between the organic light-emitting layer and the outside at the edge of the organic light-emitting display device, cutting off the path for moisture to penetrate into the interior from the edge of the organic light-emitting display device and preventing moisture from penetrating into the display device along the edge of the organic light-emitting layer, thereby avoiding display defects caused by this.

[0285] Meanwhile, the organic light-emitting layer is isolated at the shielding area formed by the upper partition layer 23 and the second support layer 22, which can prevent external moisture from being further conducted to the organic light-emitting layer deposited on the lower partition layer 17. This avoids moisture from entering the display device along the path formed by the organic light-emitting layer, effectively solving the problem of external moisture eroding the organic film layer from the edge inward, and enhancing the moisture protection capability of the organic light-emitting display device.

[0286] The sidewalls of the first support layer 16 and the second support layer 22 can be etched in different processes. For example, the sidewalls of the second support layer 22 can be etched first, and then the sidewalls of the first support layer 16 can be etched; or the sidewalls of the first support layer 16 can be etched first, and then the sidewalls of the second support layer 22 can be etched. The order of etching can be set according to the actual process requirements.

[0287] In some embodiments, the sidewalls of the first support layer 16 and the sidewalls of the second support layer 22 can also be etched in the same etching process, which is not limited in this application embodiment.

[0288] S110, Etch the second insulating material layer to form a second insulating layer, the second insulating layer covering the first insulating layer.

[0289] As shown in Figures 40-42, the second insulating material layer 130 can be etched using photolithography to form the second insulating layer 13.

[0290] The second insulating layer 13 covers the first insulating layer 12, so that the second insulating layer 13 extends to the edge of the anode 11, which can more clearly define the spatial boundary of each pixel and help reduce optical crosstalk and electrical crosstalk between adjacent pixels.

[0291] The second insulating layer 13 can cover at least part of the edge of the anode 11, that is, there is a certain overlap between the second insulating layer 13 and the anode 11. When forming the second insulating layer 13, the influence of the misalignment caused by photolithography misalignment on the function of the second insulating layer 13 can be reduced.

[0292] The second insulating layer 13 is disposed around the pixel region 101, and an opening is formed on the second insulating layer 13. The opening of the second insulating layer 13 can define the light-emitting area of ​​the pixel. The defined light-emitting area can be any shape such as a rectangle, polygon or circle. This application embodiment does not limit this.

[0293] For example, a fourth photoresist layer PR4 is coated on the upper partition layer 23, as shown in FIG40. The fourth photoresist layer PR4 is exposed using a mask and a light source. After exposure, the fourth photoresist layer PR4 is treated with a developer to remove the fourth photoresist layer PR4 located in the pixel region 101, thereby leaving a fourth photoresist layer PR4 pattern on the substrate corresponding to the pattern of the second insulating layer 13, as shown in FIG41. The second insulating material layer 130 not protected by the fourth photoresist layer PR4 is removed by chemical or physical methods (such as dry etching or wet etching), thereby forming the second insulating layer 13 with the desired pattern, as shown in FIG42.

[0294] As shown in Figures 41 and 42, the second insulating material layer 130 can be etched in a single etching process to simultaneously form openings in the second insulating layer 13 in the red pixel region 101R, the green pixel region 101G, and the blue pixel region 101B.

[0295] In other embodiments, the second insulating material layer 130 in the red pixel region 101R, the green pixel region 101G, and the blue pixel region 101B can be etched respectively, and organic light-emitting layers of corresponding colors can be prepared in the pixel regions 101 of different colors during the etching process of the second insulating material layer 130 in the pixel regions 101 of different colors. This application does not limit this.

[0296] The method for manufacturing an organic light-emitting display device provided in this application involves preparing a second support layer and an upper partition layer on top of a lower partition layer, with the edge of the upper partition layer extending beyond the edge of the second support layer. This creates an eaves structure above the edge of the second support layer, allowing the organic light-emitting layer to be cut during fabrication. The second support layer and the upper partition layer can extend the etching path during the etching process, providing protection for the lower partition layer and maintaining the stability of the size and position of the shielding area formed by the lower partition layer. This ensures the organic light-emitting layer can be precisely deposited at a predetermined position, improving the precision and reliability of the manufacturing process. Furthermore, during the fabrication of the organic light-emitting layer, the organic light-emitting layer deposited on the upper partition layer... The light-emitting layer can be easily removed through a specific process, ensuring that there is no cross-section between the organic light-emitting layer and the outside at the edge of the organic light-emitting display device. This cuts off the path for moisture to penetrate into the interior of the organic light-emitting display device from the edge, preventing moisture from seeping into the display device along the edge of the organic light-emitting layer. This avoids display defects caused by moisture penetration. At the same time, the organic light-emitting layer is separated by the upper partition layer and the second support layer, which can prevent further conduction of external moisture to the organic light-emitting layer deposited on the lower partition layer. This prevents moisture from entering the display device along the path formed by the organic light-emitting layer, effectively solving the problem of external moisture eroding the organic film layer from the edge inward and enhancing the moisture protection capability of the organic light-emitting display device.

[0297] Optionally, the substrate may also include a non-display area.

[0298] When forming an anode within a pixel area, the process also includes:

[0299] A cathode power supply trace is formed in the non-display area.

[0300] After forming the second insulating material layer on the first insulating layer, the process further includes:

[0301] The second insulating material layer is etched to form a first opening, which exposes at least a portion of the cathode power supply trace.

[0302] Etching the first connection electrode material layer to form the first connection electrode includes:

[0303] The first connecting electrode material layer is etched to form the first connecting electrode and the cathode connecting layer. The cathode connecting layer is electrically connected to the cathode power supply line through the first opening.

[0304] As shown in Figure 23, the substrate 10 also includes a non-display area 102, which is located on at least one side of the display area (the pixel array area for displaying images). The non-display area 102 is provided with functional circuits and signal traces, such as scan drive circuits and cathode power supply traces.

[0305] As shown in Figure 24, while the anode 11 is formed in the pixel area 101, a cathode power supply trace 24 is formed in the non-display area 102 to reduce the number of metal layers and shorten the manufacturing time. The cathode power supply trace 24 is used to transmit the common voltage provided by the external power supply to the cathodes of multiple pixels in the display area.

[0306] As shown in Figures 27-29, after the second insulating material layer 130 is formed on the first insulating layer 12, the second insulating material layer 130 can be etched by photolithography to form a first opening 1301, which exposes at least a portion of the cathode power supply trace 24.

[0307] For example, a first photoresist layer PR1 is coated on the second insulating material layer 130, as shown in FIG27. The first photoresist layer PR1 is exposed using a mask and a light source. After exposure, the first photoresist layer PR1 is treated with a developer to remove at least a portion of the first photoresist layer PR1 located above the cathode power supply line 24, as shown in FIG28. The second insulating material layer 130 not protected by the first photoresist layer PR1 is removed by chemical or physical methods (such as dry etching or wet etching), thereby forming a first opening 1301 to expose at least a portion of the cathode power supply line 24, as shown in FIG29.

[0308] As shown in Figures 31-33, during the process of etching the first connecting electrode material layer 150 to form the first connecting electrode 15, the cathode connecting layer 25 is simultaneously formed. This reduces the need for a metal layer, thereby lowering production costs, reducing substrate thickness, and shortening process time. The cathode connecting layer 25 is electrically connected to the cathode power supply trace 24 through the first opening 1301.

[0309] Optionally, the bottom surface of the lower partition layer and the side surface of the lower partition layer have a first included angle, the first included angle being greater than or equal to 45° and less than or equal to 90°.

[0310] There is a second included angle between the bottom surface of the upper partition layer and the side surface of the upper partition layer, the second included angle being greater than or equal to 45° and less than or equal to 90°.

[0311] As shown in Figure 3, the top width of the lower partition layer 17 is a pre-determined design value based on requirements. The smaller the first included angle θ1 between the bottom surface and the side surface of the lower partition layer 17, the larger the bottom width of the lower partition layer 17 will be, and the larger the overall width of the lower partition layer 17 will be. Therefore, when preparing the organic light-emitting layer 18, the lower partition layer 17 will form a large area of ​​shielding on the material of the organic light-emitting layer 18, thereby reducing the coverage area of ​​the organic light-emitting layer 18 in the pixel area 101. As a result, the area in which the organic light-emitting layer 18 can effectively emit light is reduced, that is, the part actually used for light emission in the pixel area 101 becomes smaller, affecting the overall brightness and energy efficiency of the display device.

[0312] In this embodiment, the first included angle θ1 between the bottom surface of the lower partition layer 17 and the side surface of the lower partition layer 17 is set to be greater than or equal to 45°. This avoids the first included angle θ1 being too small, which would make the overall width of the lower partition layer 17 too large. This ensures that the overall width of the lower partition layer 17 is small. When preparing the organic light-emitting layer 18, the area of ​​the material blocked by the lower partition layer 17 on the organic light-emitting layer 18 can be reduced, the coverage area of ​​the organic light-emitting layer 18 in the pixel area 101 can be increased, the area where the organic light-emitting layer 18 can effectively emit light can be increased, and the overall brightness and energy efficiency of the display device can be improved.

[0313] Meanwhile, if the first included angle θ1 between the bottom surface of the lower partition layer 17 and the side surface of the lower partition layer 17 is greater than 90°, then a lateral etching technique needs to be used in the process of preparing the lower partition layer 17. Lateral etching refers to etching on the side surface of the material to form a non-vertical sidewall, which has a high process complexity and is not easy to achieve.

[0314] Therefore, in this embodiment, by setting the first included angle θ1 between the bottom surface of the lower partition layer 17 and the side surface of the lower partition layer 17 to be less than or equal to 90°, the manufacturing process difficulty is reduced and it is easy to implement.

[0315] Similarly, the second included angle θ2 between the bottom surface and the side surface of the upper partition layer 23 is set to be greater than or equal to 45° to avoid the second included angle θ2 being too small and causing the overall width of the upper partition layer 23 to be too large. This ensures that the overall width of the upper partition layer 23 is small. When preparing the organic light-emitting layer 18, the area of ​​the material blocked by the upper partition layer 23 on the organic light-emitting layer 18 can be reduced, the coverage area of ​​the organic light-emitting layer 18 in the pixel area 101 can be increased, the area where the organic light-emitting layer 18 can effectively emit light can be increased, and the overall brightness and energy efficiency of the display device can be improved.

[0316] Meanwhile, by setting the second included angle θ2 between the bottom surface of the upper partition layer 23 and the side surface of the upper partition layer 23 to be less than or equal to 90°, the manufacturing process difficulty is reduced and it is easy to achieve.

[0317] Optionally, the edge of the upper partition layer extends beyond the edge of the second support layer by a width greater than or equal to 0.1 μm.

[0318] As shown in Figure 3, along the horizontal direction, the edge of the lower partition layer 17 extends beyond the edge of the first support layer 16 by a width of L1. In other words, when multiple pixel arrays are arranged, the shortest distance between the edge of the lower partition layer 17 and the edge of the first support layer 16 in the row or column direction is L1.

[0319] If L1 is too small, the depth of the recess of the edge of the first support layer 16 relative to the edge of the lower partition layer 17 toward the light-emitting area away from the pixel will be too shallow, which will cause the organic light-emitting layer 18 to climb along the sidewall of the first support layer 16 to the sidewall of the lower partition layer 17, thus making it impossible to ensure that the organic light-emitting layer 18 is disconnected at the recess.

[0320] In this embodiment, setting L1≥0.1μm can prevent the width L1 of the edge of the lower partition layer 17 extending beyond the edge of the first support layer 16 from being too small, that is, prevent the edge of the first support layer 16 from being recessed too shallowly relative to the edge of the lower partition layer 17 towards the light-emitting area away from the pixel, thereby ensuring that there is enough space for the organic light-emitting layer 18 to break at the recess.

[0321] The value of the width L1 by which the edge of the lower partition layer 17 extends beyond the edge of the first support layer 16 can be set according to actual needs, and this embodiment does not limit this.

[0322] Optionally, after etching the second insulating material layer to form the second insulating layer, the method further includes:

[0323] An organic light-emitting layer is formed on top of the anode. This organic light-emitting layer is located within the pixel region and includes organic light-emitting layers that emit multiple colors of light. In the row or column direction, the emitted colors of the organic light-emitting layers within adjacent pixel regions are different. Each of these organic light-emitting layers with different emitted colors is formed in the following manner:

[0324] An organic light-emitting layer is formed covering the plurality of pixel regions and the plurality of separating structures;

[0325] Remove the organic light-emitting layer from the top and side surfaces of the upper partition layer;

[0326] Remove the organic light-emitting layer from pixel areas that do not display that color.

[0327] As shown in Figure 11, an organic light-emitting layer 18 is formed on the anode 11. When electrons and holes are injected into the organic light-emitting layer 18 from the cathode 19 and the anode 11 respectively, the electrons and holes recombine in the organic light-emitting layer 18 to release energy and emit light.

[0328] The material of the organic light-emitting layer 18 determines the color of the light emitted by the organic light-emitting layer 18.

[0329] As shown in Figures 10 and 11, the pixel region 101 can be divided into a red pixel region 101R, a green pixel region 101G, and a blue pixel region 101B. The organic light-emitting layer 18 may include a red organic light-emitting layer 18R disposed in the red pixel region 101R, a green organic light-emitting layer 18G disposed in the green pixel region 101G, and a blue organic light-emitting layer 18B disposed in the blue pixel region 101B to achieve color image display. However, it is not limited to this. In some embodiments, in addition to the organic light-emitting layers of the above three colors, the organic light-emitting layer 18 may also include a white or other colored organic light-emitting layer.

[0330] The organic materials in the red organic light-emitting layer 18R, the green organic light-emitting layer 18G, and the blue organic light-emitting layer 18B are typically different. In related technologies, the fabrication process of organic light-emitting display devices with the aforementioned light-emitting structure usually requires the use of a fine metal mask (FMM) to separately deposit the red, green, and blue organic light-emitting layers. Due to manufacturing deviations, alignment deviations, and thermal deformation issues inherent in the fine metal mask, problems such as significant deviations between the film deposition position of the organic light-emitting layer and the predetermined position can occur. Furthermore, the high cost of the fine metal mask leads to a high manufacturing cost for the organic light-emitting display device. Moreover, for high-resolution microdisplays, due to the complexity of the process, it is difficult for the fine metal mask to achieve the size of ultra-small metal cutouts.

[0331] In this embodiment, the organic light-emitting layer 18 prepared by the first support layer 16, the lower partition layer 17, the second support layer 22 and the upper partition layer 23 are divided, and the organic light-emitting layers 18 between adjacent pixels are isolated from each other. The corresponding organic light-emitting layer 18 can be formed in each pixel area 101 without the use of a traditional fine metal mask (FMM), and the organic light-emitting layer 18 is separated between multiple pixel areas 101, thereby reducing manufacturing costs.

[0332] Optionally, the plurality of pixel regions include a first pixel region for displaying a first color, a second pixel region for displaying a second color, and a third pixel region, and the organic light-emitting layer includes a first organic light-emitting layer, a second organic light-emitting layer, and a third organic light-emitting layer with different light-emitting colors.

[0333] The steps for forming the first organic light-emitting layer that emits the first color of light include:

[0334] A first organic light-emitting material layer is formed, which covers the plurality of pixel regions and the plurality of partition structures; the first organic light-emitting material layer on the top surface and side surface of the upper partition layer is removed; the first organic light-emitting material layer in the second pixel region and the third pixel region is removed to form a first organic light-emitting layer emitting a first color light in the first pixel region;

[0335] The steps for forming a second organic light-emitting layer that emits a second color of light include:

[0336] A second organic light-emitting material layer is formed, which covers the plurality of pixel regions and the plurality of partition structures; the second organic light-emitting material layer on the top and side surfaces of the upper partition layer is removed; the second organic light-emitting material layer in the first pixel region and the third pixel region is removed to form a second organic light-emitting layer emitting a second color light in the second pixel region;

[0337] The steps for forming a third organic light-emitting layer that emits a third color of light include:

[0338] A third organic light-emitting material layer is formed, the third organic light-emitting material layer covering the plurality of pixel regions and the plurality of partition structures; the third organic light-emitting material layer on the top surface and side surface of the upper partition layer is removed; the third organic light-emitting material layer in the first pixel region and the second pixel region is removed, so as to form a third organic light-emitting layer emitting a third color light in the third pixel region.

[0339] As shown in Figure 11, the multiple pixel regions 101 may include a first pixel region (e.g., red pixel region 101R), a second pixel region (e.g., green pixel region 101G), and a third pixel region (e.g., blue pixel region 101B). The organic light-emitting layer 18 includes a first organic light-emitting layer (e.g., red organic light-emitting layer 18R), a second organic light-emitting layer (e.g., green organic light-emitting layer 18G), and a third organic light-emitting layer (e.g., blue organic light-emitting layer 18B) with different light-emitting colors.

[0340] The steps for forming the first organic light-emitting layer that emits the first color of light include:

[0341] As shown in Figure 43, a first organic light-emitting material layer 180R is formed on the anode 11. The first organic light-emitting material layer 180R covers the first pixel region 101R, the second pixel region 101G, the third pixel region 101B, and multiple separation structures between the pixel regions.

[0342] As shown in Figure 46, the first organic light-emitting material layer 180R on the top and side surfaces of the partition layer 23 with multiple partition structures is removed.

[0343] As shown in Figure 50, the first organic light-emitting material layer 180R in the second pixel region 101G and the third pixel region 101B is removed to form the first organic light-emitting layer in the first pixel region 101R.

[0344] The steps for forming a second organic light-emitting layer that emits a second color of light include:

[0345] As shown in Figure 51, a second organic light-emitting material layer 180G is formed, which covers the first pixel region 101R, the second pixel region 101G, the third pixel region 101B, and multiple separating structures located between the pixel regions. At this time, the first organic light-emitting layer has been formed in the first pixel region and is protected by an encapsulation layer, and the second organic light-emitting material layer 180G covers the encapsulation layer of the first pixel region 101R.

[0346] As shown in Figure 54, the second organic light-emitting material layer 180G on the top and side surfaces of the upper partition layer 23 of the partition structure is removed;

[0347] As shown in Figure 58, the second organic light-emitting material layer 180G in the first pixel region 101R and the third pixel region 101B is removed to form a second organic light-emitting layer in the second pixel region 101G.

[0348] The steps for forming a third organic light-emitting layer that emits a third color of light include:

[0349] As shown in Figure 59, a third organic light-emitting material layer 180B is formed, which covers the first pixel region 101R, the second pixel region 101G, the third pixel region 101B, and multiple separating structures located between the pixel regions. At this time, the first organic light-emitting layer has been formed in the first pixel region and is protected by an encapsulation layer, the second organic light-emitting layer has been formed in the second pixel region and is protected by an encapsulation layer, and the second organic light-emitting material layer 180G covers the encapsulation layer of the first pixel region 101R and the second pixel region 101G.

[0350] As shown in Figure 62, the third organic light-emitting material layer 180B on the top and side surfaces of the upper partition layer 23 of the partition structure is removed.

[0351] As shown in Figure 62, the third organic light-emitting material layer 180B in the first pixel region 101R and the second pixel region 101G is removed to form a third organic light-emitting layer in the third pixel region 101B.

[0352] Optionally, the step of forming the first organic light-emitting layer that emits the first color light further includes:

[0353] After forming the first organic light-emitting material layer, a first cathode material layer is also formed to cover the first organic light-emitting material layer, and a first encapsulation material layer is formed to encapsulate the first organic light-emitting material layer and the first cathode material layer.

[0354] The removal of the first organic light-emitting material layer from the top and side surfaces of the upper partition layer includes etching a portion of the first encapsulation material layer to expose the first cathode material layer on the upper partition layer, and etching to remove the first cathode material and the first organic light-emitting layer from the top and side surfaces of the upper partition layer.

[0355] The step of forming the second organic light-emitting layer that emits a second color of light further includes:

[0356] After forming the second organic light-emitting material layer, a second cathode material layer is also formed to cover the second organic light-emitting material layer, and a second encapsulation material layer is formed to encapsulate the second organic light-emitting material layer and the second cathode material layer.

[0357] The removal of the second organic light-emitting material layer from the top and side surfaces of the upper partition layer includes etching a portion of the second encapsulation material layer to expose the second cathode material layer on the upper partition layer, and etching to remove the second cathode material and the second organic light-emitting layer from the top and side surfaces of the upper partition layer.

[0358] The step of forming the third organic light-emitting layer that emits a third color of light further includes:

[0359] After forming the third organic light-emitting material layer, a third cathode material layer is also formed to cover the third organic light-emitting material layer, and a third encapsulation material layer is formed to encapsulate the third organic light-emitting material layer and the third cathode material layer.

[0360] The removal of the third organic light-emitting material layer from the top and side surfaces of the upper partition layer includes etching a portion of the third encapsulation material layer to expose the third cathode material layer on the upper partition layer, and etching away the third cathode material and the third organic light-emitting layer from the top and side surfaces of the upper partition layer.

[0361] Optionally, before etching a portion of the first encapsulation material layer, a first planarization layer is formed on the first encapsulation material layer; the first planarization layer and the portion of the first encapsulation material layer are etched to expose a first cathode material layer on the upper partition layer; and / or,

[0362] Before etching the portion of the second encapsulation material layer, a second planarization layer is formed on the second encapsulation material layer; the second planarization layer and the portion of the second encapsulation material layer are etched to expose the second cathode material layer on the upper partition layer; and / or

[0363] Before etching the portion of the third encapsulation material layer, a third planarization layer is formed on the third encapsulation material layer; the third planarization layer and the portion of the third encapsulation material layer are etched to expose the third cathode material layer on the upper partition layer.

[0364] Optionally, after the etching removes the first cathode material and the first organic light-emitting material layer on the upper partition layer, a first compensation encapsulation material layer is also formed to re-encapsulate the remaining first cathode material and the first organic light-emitting material layer.

[0365] After the etching removes the second cathode material and the second organic light-emitting material layer on the upper partition layer, a second compensation encapsulation material layer is formed to re-encapsulate the remaining second cathode material and the second organic light-emitting layer.

[0366] This application provides an optional method for manufacturing an organic light-emitting display device. Referring to Figures 42 to 64, the manufacturing method includes:

[0367] Referring to FIG42, a substrate 10 is provided, the substrate 10 including a plurality of pixel regions spaced apart, the plurality of pixel regions including pixel regions for displaying different colors, including a first pixel region 101R, a second pixel region 101G, and a third pixel region 101B. An anode 11 is formed in the plurality of pixel regions. A plurality of partition structures are formed between the anodes 11, the partition structures including an upper partition layer 23 located on top of them.

[0368] Referring to Figure 43, a first organic light-emitting material layer 180R is formed on the anode 11. This first organic light-emitting material layer 180R covers the first pixel region 101R, the second pixel region 101G, the third pixel region 101B, and multiple separating structures between the pixel regions. Furthermore, the first organic light-emitting material layer 180R located within the first pixel region 101R and the first organic light-emitting material layer 180R located on top of the separating structures are not connected to each other.

[0369] Referring to Figure 43, a first cathode material layer 191 and a first encapsulation material layer are sequentially formed on the first organic light-emitting material layer 180R, covering the first pixel region 101R, the second pixel region 101G, the third pixel region 101B, and multiple separating structures between the pixel regions. The first encapsulation material layer may include a first sub-encapsulation material layer 261 and a second sub-encapsulation material layer 271. Of course, the first encapsulation material layer may also be a single material layer formed of the same material, and this application does not impose any restrictions.

[0370] The first sub-encapsulation material layer 261 can be prepared using atomic layer deposition (ALD) technology. ALD technology involves the alternating introduction of two or more precursor gases, causing a self-limiting reaction on the substrate surface to form a single-atom-thick deposit. This process can be repeated, allowing for precise control of the film thickness and quality at the atomic level. ALD technology can form uniform, dense, and void-free films, achieving uniform coverage even on complex geometries, and can precisely control the film thickness, meeting the requirements for high step coverage and excellent barrier properties.

[0371] The second sub-encapsulation material layer 271 can be prepared using chemical vapor deposition (CVD) film deposition technology. CVD technology utilizes chemical reactions to form the desired solid film through the interaction of gaseous precursors (reactant gases) with the substrate surface. CVD technology can achieve uniform deposition of high-quality films on large-area substrates, enabling the second encapsulation material layer 271 to provide good water vapor and oxygen barrier properties.

[0372] As shown in FIG45, the second sub-encapsulation material layer 271 is etched to form a second opening 2710 on the second sub-encapsulation material layer 271, the second opening 2710 exposing the first sub-encapsulation material layer 261 above the upper partition layer 23.

[0373] As shown in Figure 46, the first sub-encapsulation material layer 261, the first cathode material layer 191, and the first organic light-emitting material layer 180R above and on the sidewall of the upper partition layer 23 can be removed by using a wet etching process through the second opening 2710.

[0374] As shown in Figure 47, a first compensation encapsulation material layer 601 is formed on the second encapsulation material layer 271, and the first compensation encapsulation material layer 601 covers the partition layer 23 to encapsulate the organic light-emitting display device again.

[0375] As shown in Figures 47-49, photolithography can be used to etch the first organic light-emitting material layer 180R, the first cathode material layer 191, the first sub-encapsulation material layer 261, the second sub-encapsulation material layer 271, and the first compensation encapsulation material layer 601 to retain the first pixel region (e.g., the red pixel region 101R) forming the first organic light-emitting layer (e.g., the red organic light-emitting layer 18R), the cathode 19, and the first encapsulation layer, while removing the first organic light-emitting material layers in the second pixel region 101G and the third pixel region 101B. The first encapsulation layer may include the first sub-encapsulation layer 26 within the first pixel region 1 formed by the first sub-encapsulation material layer 261 and the second sub-encapsulation layer 27 within the first pixel region formed by the second sub-encapsulation material layer 271.

[0376] A sixth photoresist layer PR6 is coated on the first compensation encapsulation material layer 601, as shown in Figure 47. The sixth photoresist layer PR6 is exposed using a mask and a light source. After exposure, the sixth photoresist layer PR6 is treated with a developer to remove the sixth photoresist layer PR6 located in the second pixel region (e.g., green pixel region 101G) and the third pixel region (e.g., blue pixel region 101B), thereby leaving a pattern of the sixth photoresist layer PR6 on the substrate corresponding to the pattern of the first organic light-emitting layer (e.g., red organic light-emitting layer 18R), as shown in Figure 48.

[0377] The first compensation encapsulation material layer 601 and the second sub-encapsulation material layer 271, which are not protected by the sixth photoresist layer PR6, can be removed by a dry etching process, thereby retaining the first encapsulation layer of the first pixel region (e.g., the red pixel region 101R), as shown in Figure 49.

[0378] Then, the first sub-encapsulation material layer 261, the first cathode material layer 191, and the first organic light-emitting material layer 180R of the second pixel region 101G and the third pixel region 101B, which are not protected by the sixth photoresist layer PR6, can be removed by a wet etching process, thereby retaining the first organic light-emitting layer (e.g., the red organic light-emitting layer 18R), the cathode 19, and the first encapsulation layer of the first pixel region (e.g., the red pixel region 101R). Finally, the sixth photoresist layer PR6 is removed, as shown in Figure 50.

[0379] Because the organic light-emitting layer deposited on the separation structure has been removed before the material of the second pixel region 101G and the third pixel region 101B is etched away, it can be ensured that the first organic light-emitting layer (e.g., red organic light-emitting layer 18R) of the first pixel region (e.g., red pixel region 101R) has no cross-section in contact with the outside world. The first organic light-emitting layer (e.g., red organic light-emitting layer 18R), cathode 19 and first sub-encapsulation layer 26 in the first pixel region (e.g., red pixel region 101R) are completely wrapped by the second sub-encapsulation layer 27, which can prevent moisture from penetrating into the first organic light-emitting layer (e.g., red organic light-emitting layer 18R), thereby solving the display defect problem caused by this.

[0380] As shown in Figure 51, a second organic light-emitting material layer 180G, a second cathode material layer 192, and a second encapsulation material layer are sequentially formed on the anode 11. The second encapsulation material layer includes a third sub-encapsulation material layer 262 and a fourth sub-encapsulation material layer 272. The second encapsulation material layer may also be a single material layer formed from the same material, and this application does not impose any restrictions on this.

[0381] The third sub-encapsulation material layer 262 can be prepared using atomic layer deposition (ALD) film formation technology to form a uniform, dense and void-free thin film, which can achieve uniform coverage even on complex geometries to meet the requirements of high step coverage and excellent isolation performance.

[0382] The fourth sub-encapsulation material layer 272 can be prepared using chemical vapor deposition (CVD) film deposition technology to achieve uniform deposition of high-quality thin films, enabling the fourth encapsulation material layer 272 to provide good water vapor and oxygen barrier properties.

[0383] As shown in FIG53, the fourth sub-encapsulation material layer 272 is etched to form a third opening 2720 on the fourth sub-encapsulation material layer 272. The third opening 2720 exposes the third sub-encapsulation material layer 262 on the upper partition layer 23 of the separation structure and the first pixel region (e.g., the red pixel region 101R).

[0384] As shown in Figure 54, a wet etching process can be used to remove the third sub-encapsulation material layer 262, the second cathode material layer 192, and the second organic light-emitting material layer 180G above the upper partition layer 23 and on the sidewalls, as well as the first pixel region (e.g., the red pixel region 101R), through the third opening 2720.

[0385] As shown in Figure 55, a second compensation encapsulation material layer 602 is formed on the fourth sub-encapsulation material layer 272. The second compensation encapsulation material layer 602 covers the separation structure to encapsulate the organic light-emitting display device again.

[0386] As shown in Figures 55-58, the second compensation encapsulation material layer 602, the fourth sub-encapsulation material layer 272, the third sub-encapsulation material layer 262, the second cathode material layer 192, and the second organic light-emitting material layer 180G can be etched by photolithography to form a second organic light-emitting layer (e.g., green organic light-emitting layer 18G), a cathode 19, and a second encapsulation layer in the second pixel region (e.g., green pixel region 101G).

[0387] An eighth photoresist layer PR8 is coated on the second compensation encapsulation material layer 602, as shown in Figure 55. The eighth photoresist layer PR8 is exposed using a mask and a light source. After exposure, the eighth photoresist layer PR8 is treated with a developer to remove the eighth photoresist layer PR8 located in the third pixel region (e.g., blue pixel region 101B), thereby leaving an eighth photoresist layer PR8 pattern on the substrate corresponding to the pattern of the first organic light-emitting layer (e.g., red organic light-emitting layer 18R) and the second organic light-emitting layer (e.g., green organic light-emitting layer 18G), as shown in Figure 56.

[0388] The second compensation encapsulation material layer 602 and the fourth sub-encapsulation material layer 272, which are not protected by the eighth photoresist layer PR8, can be removed by a dry etching process, thereby forming a second encapsulation layer in the second pixel region (e.g., the green pixel region 101G). The second encapsulation layer may include a first sub-encapsulation layer 26 formed in the second pixel region by the third sub-encapsulation material layer 262 and a second sub-encapsulation layer 27 formed in the second pixel encapsulation region by the second sub-encapsulation material layer 272, as shown in FIG57.

[0389] Then, the third sub-encapsulation material layer 262, the second cathode material layer 192, and the second organic light-emitting material layer 180G of the third pixel region 101B that are not protected by the eighth photoresist layer PR8 can be removed by a wet etching process. Finally, the eighth photoresist layer PR8 is removed, as shown in Figure 58.

[0390] Because the second organic light-emitting material layer deposited on the separation structure is removed before the material in the third pixel region 101B is etched away, it can be ensured that the second organic light-emitting layer (e.g., green organic light-emitting layer 18G) in the second pixel region (e.g., green pixel region 101G) has no cross-section in contact with the outside world. The second organic light-emitting layer (e.g., green organic light-emitting layer 18G), the cathode 19 and the second encapsulation layer in the second pixel region (e.g., green pixel region 101G) are wrapped in the second encapsulation layer, which can prevent moisture from penetrating into the second organic light-emitting layer (e.g., green organic light-emitting layer 18G), thereby solving the display defect problem caused by this.

[0391] As shown in Figure 59, a third organic light-emitting material layer 180B, a third cathode material layer 193, and a third encapsulation layer are sequentially formed on the anode 11. The third encapsulation layer includes a fifth sub-encapsulation material layer 263 and a sixth sub-encapsulation material layer 273. The third encapsulation material layer may also be a single material layer formed of the same material, and this application does not impose any restrictions on this.

[0392] The fifth sub-encapsulation material layer 263 can be prepared using atomic layer deposition (ALD) film formation technology to form a uniform, dense and void-free thin film, which can achieve uniform coverage even on complex geometries to meet the requirements of high step coverage and excellent isolation performance.

[0393] The sixth sub-encapsulation material layer 273 can be prepared using chemical vapor deposition (CVD) film deposition technology to achieve uniform deposition of high-quality thin films, so that the fourth encapsulation material layer 272 can provide good water vapor and oxygen barrier properties.

[0394] As shown in FIG61, the sixth sub-encapsulation material layer 273 is etched to form a fourth opening 2730 on the sixth sub-encapsulation material layer 273. The fourth opening 2730 exposes the fifth sub-encapsulation material layer 263 above the upper partition layer 23 and the first pixel region (e.g., red pixel region 101R) and the second pixel region (e.g., green pixel region 101G).

[0395] As shown in Figure 62, a wet etching process can be used to remove the fifth sub-encapsulation material layer 263, the third cathode material layer 193, and the third organic light-emitting material layer 180B above the upper partition layer 23 of the separator structure and on the sidewalls, as well as in the first pixel region (e.g., red pixel region 101R) and the second pixel region (e.g., green pixel region 101G), through the fourth opening 2730. This allows the formation of a third organic light-emitting layer (e.g., blue organic light-emitting layer 18B), a cathode 19, and a third encapsulation layer in the third pixel region (e.g., blue pixel region 101B). The third encapsulation layer may include the first sub-encapsulation layer 26 formed within the third pixel region by the fifth sub-encapsulation material layer 263 and the second sub-encapsulation layer 27 formed within the third pixel region by the sixth sub-encapsulation material layer 273.

[0396] The removal of the organic light-emitting layer deposited on the upper partition layer 23 ensures that the third organic light-emitting layer (e.g., blue organic light-emitting layer 18B) in the third pixel region (e.g., blue pixel region 101B) has no cross-section in contact with the outside world. The third organic light-emitting layer (e.g., blue organic light-emitting layer 18B) in the third pixel region (e.g., blue pixel region 101B) and the cathode 19 are completely wrapped by the third encapsulation layer, which can prevent moisture from penetrating into the third organic light-emitting layer (e.g., blue organic light-emitting layer 18B), thereby solving the display defects caused by this.

[0397] Optionally, the material of the first sub-encapsulation material layer 261 includes at least one of aluminum oxide and titanium oxide; and / or, the material of the third sub-encapsulation material layer 262 includes at least one of aluminum oxide and titanium oxide; and / or, the material of the fifth sub-encapsulation material layer 263 includes at least one of aluminum oxide and titanium oxide.

[0398] Alumina (Al2O3) and titanium dioxide (TiO2) have excellent water and oxygen barrier properties, effectively isolating water vapor and oxygen from the external environment. Simultaneously, they also exhibit good step coverage, enabling uniform coverage of non-planar areas such as edges, grooves, and protrusions in each film layer. The fact that at least one of the first sub-encapsulation material layer 261, the third sub-encapsulation material layer 262, and the fifth sub-encapsulation material layer 263 is made of at least one of alumina and titanium dioxide ensures that the final first sub-encapsulation layer 26 completely covers the cathode 19 and the organic light-emitting layer 18, preventing gaps or weak points at the film layer edges from compromising the barrier performance of the first sub-encapsulation layer 26.

[0399] Optionally, the thickness of the first sub-encapsulation material layer 261 is greater than or equal to 30 nm; and / or, the thickness of the third sub-encapsulation material layer 262 is greater than or equal to 30 nm; and / or, the thickness of the fifth sub-encapsulation material layer 263 is greater than or equal to 30 nm.

[0400] By setting the thickness of at least one of the first sub-encapsulation material layer 261, the third sub-encapsulation material layer 262, and the fifth sub-encapsulation material layer 263 to 30 nm or more, effective water vapor and oxygen barrier effects can be achieved. Simultaneously, the larger thickness of the final first sub-encapsulation layer 26 also better resists external impacts and stresses, reducing the risk of encapsulation failure due to physical damage.

[0401] Optionally, the material of the second sub-encapsulation material layer 271 includes one or more of SiN, SiO, and SiON; and / or, the material of the fourth sub-encapsulation material layer 272 includes one or more of SiN, SiO, and SiON; and / or, the material of the sixth sub-encapsulation material layer 273 includes one or more of SiN, SiO, and SiON.

[0402] Silicon nitride (SIN), silicon dioxide (SiO), and silicon oxynitride (SiON) all provide good moisture and oxygen barrier properties. Using at least one of the second sub-encapsulation material layer 271, the fourth sub-encapsulation material layer 272, and the sixth sub-encapsulation material layer 273 with materials such as SIN, SiO, or SiON is beneficial for improving the encapsulation performance of the organic light-emitting display device, ensuring that the internal OLED devices are protected from environmental factors, and extending the lifespan and stability of the organic light-emitting display device.

[0403] Optionally, the thickness of the second sub-encapsulation material layer 271 is greater than the height difference between the upper surface of the upper partition layer 23 and the upper surface of the anode 11; and / or, the thickness of the fourth sub-encapsulation material layer 272 is greater than the height difference between the upper surface of the upper partition layer 23 and the upper surface of the anode 11; and / or, the thickness of the sixth sub-encapsulation material layer 273 is greater than the height difference between the upper surface of the upper partition layer 23 and the upper surface of the anode 11.

[0404] As shown in Figure 43, the thickness of the second sub-encapsulation material layer 271 is set to be greater than the height difference between the upper surface of the upper partition layer 23 and the upper surface of the anode 11. This allows the second encapsulation material layer 271 to completely cover the partition structure, which helps to protect the organic light-emitting layer from external moisture and oxygen erosion, thereby extending the life of the device. At the same time, it can effectively seal potential micro gaps or steps to prevent harmful substances from penetrating.

[0405] Setting the thickness of the second sub-encapsulation material layer 271 to be greater than the height difference between the upper surface of the upper partition layer 23 and the upper surface of the anode 11 facilitates the subsequent planarization treatment of the upper surface of the second sub-encapsulation material layer 271, thereby improving the flatness of the surface of the second sub-encapsulation material layer 271. This is beneficial for the subsequent bonding of laminated structures (such as polarizers), reducing bonding bubbles and improving optical performance.

[0406] Similarly, as shown in Figure 51, setting the thickness of the fourth sub-encapsulation material layer 272 to be greater than the height difference between the upper surface of the upper partition layer 23 and the upper surface of the anode 11 allows the fourth sub-encapsulation material layer 272 to completely cover the partition structure, which helps protect the organic light-emitting layer from external moisture and oxygen erosion, thereby extending the device's lifespan. At the same time, it can effectively seal potential micro gaps or steps, preventing harmful substances from penetrating.

[0407] Setting the thickness of the fourth sub-encapsulation material layer 272 to be greater than the height difference between the upper surface of the upper partition layer 23 and the upper surface of the anode 11 facilitates the subsequent planarization treatment of the upper surface of the fourth sub-encapsulation material layer 272, thereby improving the flatness of the surface of the fourth sub-encapsulation material layer 272. This is beneficial for the subsequent bonding of stacked structures (such as polarizers), reducing bonding bubbles and improving optical performance.

[0408] Similarly, as shown in Figure 59, setting the thickness of the sixth sub-encapsulation material layer 273 to be greater than the height difference between the upper surface of the upper partition layer 23 and the upper surface of the anode 11 allows the sixth sub-encapsulation material layer 273 to completely cover the partition structure, which helps protect the organic light-emitting layer from external moisture and oxygen erosion, thereby extending the device's lifespan. At the same time, it can effectively seal potential micro gaps or steps, preventing harmful substances from penetrating.

[0409] Setting the thickness of the sixth sub-encapsulation material layer 273 to be greater than the height difference between the upper surface of the upper partition layer 23 and the upper surface of the anode 11 facilitates subsequent planarization of the upper surface of the sixth sub-encapsulation material layer 273, thereby improving the flatness of the surface of the sixth sub-encapsulation material layer 273, which helps to ensure uniform light output and improve the display effect.

[0410] Optionally, etching the second sub-encapsulation material layer to form a second opening in the second sub-encapsulation material layer includes:

[0411] A first planarization layer is formed on the second sub-encapsulation material layer.

[0412] The first planarization layer and the second sub-encapsulation material layer are etched so that the upper surface of the second sub-encapsulation material layer is lower than the upper surface of the first encapsulation material layer above the upper partition layer, so as to form a second opening in the second sub-encapsulation material layer.

[0413] And / or,

[0414] Etching the fourth sub-package material layer to form a third opening on the fourth sub-package material layer includes:

[0415] A second planarization layer is formed on the fourth sub-encapsulation material layer.

[0416] The second planarization layer and the fourth sub-encapsulation material layer are etched so that the upper surface of the fourth sub-encapsulation material layer is lower than the upper surface of the third sub-encapsulation material layer above the upper partition layer, so as to form a third opening on the fourth sub-encapsulation material layer.

[0417] And / or,

[0418] Etching the sixth sub-package material layer to form a fourth opening on the sixth sub-package material layer includes:

[0419] A third planarization layer is formed on the sixth sub-encapsulation material layer.

[0420] The third planarization layer and the sixth sub-encapsulation material layer are etched so that the upper surface of the sixth sub-encapsulation material layer is lower than the upper surface of the fifth sub-encapsulation material layer above the upper partition layer, so as to form a fourth opening on the sixth sub-encapsulation material layer.

[0421] As shown in Figure 44, a first planarization layer PR5 is coated on the second sub-encapsulation material layer 271.

[0422] As shown in Figure 45, the first planarization layer PR5 and the second sub-encapsulation material layer 271 are etched so that the upper surface of the second encapsulation material layer 271 is lower than the upper surface of the first sub-encapsulation material layer 261 above the upper partition layer 23, thereby forming a second opening 2710 on the second sub-encapsulation material layer 271. This facilitates the subsequent removal of the first sub-encapsulation material layer 261, the first cathode material layer 191, and the first organic light-emitting material layer 180R above and on the sidewall of the upper partition layer 23 through the second opening 2710. This ensures that the first organic light-emitting layer (e.g., the red organic light-emitting layer 18R) in the first pixel region (e.g., the red pixel region 101R) has no cross-section in contact with the outside world, preventing moisture from penetrating into the first organic light-emitting layer (e.g., the red organic light-emitting layer 18R), thereby solving the display defects caused by this.

[0423] The first planarization layer PR5 can fill the recessed area on the upper surface of the second sub-encapsulation material layer 271, thereby providing a relatively flat upper surface. When the first planarization layer PR5 and the second sub-encapsulation material layer 271 are subsequently etched, the etching will proceed downwards from the relatively flat upper surface of the first planarization layer PR5 at a relatively uniform speed, ensuring that the entire upper surface is cut off at a relatively consistent speed until the first encapsulation material layer 261 is exposed. At this point, the second encapsulation material layer 271 will form a relatively flat upper surface, thereby achieving a planarization effect, which is beneficial for ensuring uniform light output and improving the display effect.

[0424] Similarly, as shown in Figure 52, a second planarization layer PR7 is coated on the fourth sub-encapsulation material layer 272.

[0425] As shown in Figure 53, the second planarization layer PR7 and the fourth sub-encapsulation material layer 272 are etched so that the upper surface of the fourth sub-encapsulation material layer 272 is lower than the upper surface of the third encapsulation material layer 262 above the upper partition layer 23. This forms a third opening 2720 on the fourth sub-encapsulation material layer 272, which facilitates the subsequent removal of the third sub-encapsulation material layer 262, the second cathode material layer 192, and the second organic light-emitting material layer 180G above and on the sidewalls of the upper partition layer 23, as well as in the first pixel region (e.g., the red pixel region 101R). This ensures that the second organic light-emitting layer (e.g., the green organic light-emitting layer 18G) formed in the second pixel region (e.g., the green pixel region 101G) has no cross-section in contact with the outside world, preventing moisture from penetrating into the second organic light-emitting layer (e.g., the green organic light-emitting layer 18G), thereby solving the display defects caused by this.

[0426] The second planarization layer PR7 can fill the recessed area on the upper surface of the fourth sub-encapsulation material layer 272, thereby providing a relatively flat upper surface. During the subsequent etching of the second planarization layer PR7 and the fourth sub-encapsulation material layer 272, the etching will proceed downwards from the relatively flat upper surface of the second planarization layer PR7 at a relatively uniform speed, ensuring that the entire upper surface is cut off at a relatively consistent speed until the third sub-encapsulation material layer 262 is exposed. At this point, the fourth sub-encapsulation material layer 272 will form a relatively flat upper surface, thereby achieving a planarization effect, which is beneficial for ensuring uniform light output and improving the display effect.

[0427] Similarly, as shown in Figure 60, a third planarization layer PR9 is coated on the sixth sub-encapsulation material layer 273.

[0428] As shown in Figure 61, the third planarization layer PR9 and the sixth sub-encapsulation material layer 273 are etched so that the upper surface of the sixth sub-encapsulation material layer 273 is lower than the upper surface of the fifth sub-encapsulation material layer 263 above the upper partition layer 23. This forms a fourth opening 2730 on the sixth sub-encapsulation material layer 273, which facilitates the subsequent removal of the fifth sub-encapsulation material layer 263, the third cathode material layer 193, and the third organic light-emitting material layer 180B above and on the sidewalls of the upper partition layer 23, as well as the first pixel region (e.g., red pixel region 101R) and the second pixel region (e.g., green pixel region 101G). This ensures that the third organic light-emitting layer (e.g., blue organic light-emitting layer 18B) formed in the third pixel region (e.g., blue pixel region 101B) has no cross-section in contact with the outside world, preventing moisture from penetrating into the third organic light-emitting layer (e.g., blue organic light-emitting layer 18B), thereby solving the display defects caused by this.

[0429] The third planarization layer PR9 can fill the recessed area on the upper surface of the sixth sub-encapsulation material layer 273, thereby providing a relatively flat upper surface. During the subsequent etching of the third planarization layer PR9 and the sixth sub-encapsulation material layer 273, the etching will proceed downwards from the relatively flat upper surface of the third planarization layer PR9 at a relatively uniform speed, ensuring that the entire upper surface is cut off at a relatively consistent speed until the fifth sub-encapsulation material layer 263 is exposed. At this point, the sixth sub-encapsulation material layer 273 will form a relatively flat upper surface, thereby achieving a planarization effect, which is beneficial for ensuring uniform light output and improving the display effect.

[0430] Optionally, the thickness of the first compensation encapsulation material layer 601 is greater than or equal to the sum of the thicknesses of the organic light-emitting layer 18 and the cathode 19; and / or, the thickness of the second compensation encapsulation material layer 602 is greater than or equal to the sum of the thicknesses of the organic light-emitting layer 18 and the cathode 19.

[0431] As shown in Figure 47, the thickness of the first compensation encapsulation material layer 601 is set to be greater than or equal to the sum of the thicknesses of the organic light-emitting layer 18 and the cathode 19. This allows the first compensation encapsulation material layer 601 to completely encapsulate the separation structure, which helps protect the organic light-emitting layer from external moisture and oxygen erosion, thereby extending the life of the device. At the same time, it can effectively seal potential micro gaps or steps to prevent harmful substances from penetrating.

[0432] As shown in Figure 55, the thickness of the second compensation encapsulation material layer 602 is set to be greater than or equal to the sum of the thicknesses of the organic light-emitting layer 18 and the cathode 19. This allows the second compensation encapsulation material layer 602 to completely encapsulate the separation structure, which helps protect the organic light-emitting layer from external moisture and oxygen erosion, thereby extending the life of the device. At the same time, it can effectively seal potential micro gaps or steps to prevent harmful substances from penetrating.

[0433] Optionally, the upper surface of the fourth sub-encapsulation material layer located in the second pixel region is higher than the upper surface of the third sub-encapsulation material layer.

[0434] As shown in Figure 51, the lowest point of the upper surface of the fourth sub-encapsulation material layer 272 located in the second pixel region (e.g., the green pixel region 101G) is set to be higher than the highest point of the upper surface of the third sub-encapsulation material layer 262. When the second planarization layer PR7 and the fourth sub-encapsulation material layer 272 are subsequently etched until the first sub-encapsulation material layer 261 is exposed, it can be ensured that the second planarization layer PR7 is completely removed. This avoids the second planarization layer PR7 remaining in the second pixel region (e.g., the green pixel region 101G) and affecting the uniform output of light, thus having an adverse effect on the display effect.

[0435] Optionally, after forming the third organic light-emitting layer, cathode, and third encapsulation layer in the third pixel region, the method further includes:

[0436] A fourth encapsulation layer is formed on the first encapsulation layer, the second encapsulation layer, and the third encapsulation layer.

[0437] As shown in Figure 63, a fourth encapsulation layer 28 is formed on the first encapsulation layer, the second encapsulation layer and the third encapsulation layer. The fourth encapsulation layer 28 covers the first encapsulation layer, the second encapsulation layer and the third encapsulation layer, thereby further enhancing the overall water and oxygen barrier effect and providing further protection for the cathode 19 and the organic light-emitting layer 18, preventing water vapor in the external environment from penetrating into the OLED device and causing corrosion to the organic light-emitting layer 18.

[0438] At the same time, the fourth encapsulation layer 28 can also increase the mechanical strength of the entire encapsulation structure, protect the internal components from external physical impacts and scratches, and improve the durability of the organic light-emitting display device.

[0439] Optionally, the material, thickness, and manufacturing process of the fourth encapsulation layer 28 can be the same as those of the first sub-encapsulation layer, the third sub-encapsulation layer, and the fifth sub-encapsulation layer. The scheme can be referred to the above embodiments, and will not be repeated here.

[0440] Optionally, as shown in Figure 24, while forming the anode 11 in the pixel area 101, a bonding terminal 32 is formed in the non-display area 102 to reduce the number of metal layers and shorten the process time. The bonding terminal 32 is used to transmit the display driving signals provided by the display driver chip to multiple pixels in the display area.

[0441] Optionally, as shown in Figure 64, after forming the fourth encapsulation layer 28, the following is also included:

[0442] Remove all encapsulation layers above the bonding terminal 32 to facilitate bonding the bonding terminal 32 to the display driver chip.

[0443] Optionally, as shown in FIG34, when forming a first support material layer 160, a first partition material layer 170, a second support material layer 220, and a second partition material layer 230 on the first connecting electrode 15, the method further includes:

[0444] A light-shielding material layer 300 is formed on the upper surface of the first support material layer 160.

[0445] As shown in Figure 37, when etching the first support material layer 160, the first partition material layer 170, the second support material layer 220, and the second partition material layer 230, the light-shielding material layer 300 can be etched simultaneously to form a light-shielding layer 30 on the side of the first support layer 16 facing away from the substrate 10. The vertical projection of the light-shielding layer 30 on the substrate 10 covers the vertical projection of the lower partition layer 17 on the substrate. On the one hand, the light-shielding layer 30 can block the organic light-emitting layer material deposited above the lower partition layer 17, preventing the light emitted by one pixel from being reflected by the organic light-emitting layer material above the lower partition layer 17 to adjacent pixels, thereby reducing unnecessary reflections, improving light crosstalk, and improving display quality. On the other hand, the light-shielding layer 30 can also block the first connecting electrode 15. In the photolithography process, it can prevent the reflection of the first connecting electrode 15 from interfering with the accurate exposure of the photoresist, thereby improving etching accuracy.

[0446] Referring again to Figure 34, optionally, when forming the first support material layer 160, the first partition material layer 170, the second support material layer 220, and the second partition material layer 230 on the first connecting electrode 15, the method further includes:

[0447] An etching barrier material layer 290 is formed on the upper surface of the second partition material layer 230.

[0448] As shown in Figure 37, when etching the first support material layer 160, the first partition material layer 170, the second support material layer 220, and the second partition material layer 230, the etching barrier material layer 290 can be etched simultaneously to form an etching barrier layer 29 on the side of the upper partition layer 23 away from the substrate 10. The material of the etching barrier layer 29 is different from that of the upper partition layer 23. The etching barrier layer 29 is used to protect the upper partition layer 23 below it so that the upper partition layer 23 is protected from the erosion of the etching gas or solution used in the etching process. This ensures that the shape and size of the upper partition layer 23 can be maintained when patterning or etching other layers such as the organic light-emitting layer 18, and avoids unnecessary damage or shape changes to the upper partition layer 23.

[0449] It should be understood that the various processes shown above can be used to rearrange, add, or delete steps. For example, the multiple steps described in this application can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this application can be achieved, and this is not limited herein.

Claims

1. An organic light emitting display device, comprising: a substrate comprising a plurality of pixel regions arranged at intervals; an anode disposed in the pixel regions, a plurality of partition structures being disposed between the pixel regions; the partition structures comprising: a first insulating layer filling between the pixel regions; a second insulating layer disposed on the first insulating layer, the second insulating layer covering the first insulating layer; a first connection electrode disposed on the second insulating layer; a first support layer disposed on the first connection electrode; a lower barrier layer disposed on the first support layer, an edge of the lower barrier layer exceeding an edge of the first support layer; a second support layer disposed on the lower barrier layer; an upper barrier layer disposed on the second support layer, an edge of the upper barrier layer exceeding an edge of the second support layer. 2.The organic light emitting display device of claim 1, wherein: the pixel regions further comprise an organic light emitting layer disposed on the anode, the organic light emitting layer comprising organic light emitting layers emitting a plurality of colors, the organic light emitting layers in adjacent pixel regions emitting different colors in a row or column direction. 3.The organic light emitting display device of claim 2, further comprising a cathode disposed on the organic light emitting layer, the cathode and the first connection electrode being electrically connected. 4.The organic light emitting display device of claim 3, wherein: the substrate further comprises a non-display region; the organic light emitting display device further comprises: a cathode power supply trace disposed in the non-display region; a cathode connection layer electrically connected to the cathode power supply trace, the cathode connection layer being electrically connected to the cathode, and the cathode connection layer and the first connection electrode being located in the same film layer. 5.The organic light emitting display device of claim 3, further comprising an encapsulation layer disposed on the cathode.

6. The organic light emitting display device according to claim 5, wherein, the encapsulation layer comprises a first sub-encapsulation layer covering the cathode and a second sub-encapsulation layer covering the first sub-encapsulation layer. 7.The organic light emitting display device of claim 6, wherein: a material of the first sub-encapsulation layer comprises at least one of aluminum oxide and titanium oxide. 8.The organic light emitting display device of claim 6, wherein: a thickness of the first sub-encapsulation layer is greater than or equal to 30 nm. 9.The organic light emitting display device of claim 6, wherein: a material of the second sub-encapsulation layer comprises one or more of SIN, SiO and SiON. 10.The organic light emitting display device of claim 6, further comprising a third sub-encapsulation layer disposed on the second sub-encapsulation layer. 11.The organic light emitting display device of claim 1, wherein: a top surface width of the lower barrier layer is less than a bottom surface width of the lower barrier layer. 12.The organic light emitting display device of claim 1, wherein: a first included angle between a bottom surface of the lower barrier layer and a side surface of the lower barrier layer is greater than or equal to 45° and less than or equal to 90°. 13.The organic light emitting display device of claim 1, wherein: A top surface of the upper partition layer has a width smaller than a bottom surface of the upper partition layer. 14.The organic light emitting display apparatus of claim 1, wherein, A second included angle between the bottom surface of the upper partition layer and a side surface of the upper partition layer is greater than or equal to 45° and less than or equal to 90°. 15.The organic light emitting display apparatus of claim 1, wherein, A width of an edge of the lower partition layer beyond an edge of the first support layer is greater than or equal to 0.1 µm. 16.The organic light emitting display apparatus of claim 1, wherein, A thickness of the lower partition layer is greater than or equal to 50 nm. 17.The organic light emitting display apparatus of claim 1, wherein, A material of the lower partition layer comprises one or more of SiO, SiN, ITO, and TiN. 18.The organic light emitting display apparatus of claim 1, wherein, The pixel region further comprises an organic light emitting layer disposed on the anode and a cathode disposed on the organic light emitting layer; A thickness of the second support layer is greater than a sum of thicknesses of the organic light emitting layer and the cathode. 19.The organic light emitting display apparatus of claim 1, wherein, The thickness of the second support layer is 200 nm to 500 nm. 20.The organic light emitting display apparatus of claim 1, wherein, A material of the second support layer comprises one or more of SiN, SiO, ITO, Ti, and Al. 21.The organic light emitting display apparatus of claim 1, wherein, The material of the second support layer is a conductive material; The pixel region further comprises an organic light emitting layer disposed on the anode, and the organic light emitting display apparatus further comprises a cathode disposed on the organic light emitting layer, the cathode and the second support layer being electrically connected. 22.The organic light emitting display apparatus of claim 21, wherein, The material of the first support layer is an insulating material, and a width of an edge of the lower partition layer beyond an edge of the first support layer is less than or equal to 0.3 µm. 23.The organic light emitting display apparatus of claim 1, wherein, The material of the first support layer is a conductive material; The pixel region further comprises an organic light emitting layer disposed on the anode and a cathode disposed on the organic light emitting layer, the cathode and the first support layer being electrically connected. 24.The organic light emitting display apparatus of claim 1, wherein, A thickness of the upper partition layer is greater than or equal to 50 nm. 25.The organic light emitting display apparatus of claim 1, wherein, A width of an edge of the upper partition layer beyond an edge of the second support layer is greater than or equal to 0.1 µm. 26.The organic light emitting display apparatus of claim 1, wherein, A material of the upper partition layer comprises one or more of SiO, SiN, ITO, and TiN. 27.The organic light emitting display apparatus of claim 1, further comprising an etching stop layer disposed on the upper partition layer, a material of the etching stop layer being different from a material of the upper partition layer.

28. The organic light emitting display apparatus of claim 27, wherein, a material of the etching stopper layer comprises at least one of ITO and TiN.

29. The organic light emitting display apparatus of claim 1, wherein, a material of the first support layer is different from a material of the lower partition layer; or, a material of the second support layer is different from a material of the upper partition layer; or, a material of the first support layer is different from a material of the lower partition layer, and a material of the second support layer is also different from a material of the upper partition layer.

30. The organic light emitting display apparatus of claim 1, further comprising a light blocking layer disposed on a side of the first support layer facing away from the substrate, a vertical projection of the light blocking layer on the substrate covering a vertical projection of the lower partition layer on the substrate.

31. A method of manufacturing an organic light emitting display apparatus, comprising: providing a substrate, the substrate comprising a plurality of pixel regions arranged in an array, the plurality of pixel regions comprising pixel regions for displaying different colors; forming anodes in the plurality of pixel regions; forming a plurality of partition structures between the anodes, the partition structures comprising upper partition layers on top of the partition structures; forming organic light emitting layers emitting different colors, wherein any one of the forming organic light emitting layers emitting different colors comprises: forming a layer of organic light emitting material covering the plurality of pixel regions and the plurality of partition structures; removing the layer of organic light emitting material on top of and sides of the upper partition layers; removing the layer of organic light emitting material in pixel regions not emitting the color to form an organic light emitting layer in pixel regions emitting the color.

32. The method of claim 31, after the forming a layer of organic light emitting material covering the plurality of pixel regions and the plurality of partition structures, further comprising forming a layer of cathode material, and encapsulating the layer of organic light emitting material and the layer of cathode material.

33. The method of claim 32, the removing the layer of organic light emitting material on top of and sides of the upper partition layers further comprising: etching a portion of the encapsulation layer to expose the layer of cathode material on top of the upper partition layers; etching to remove the layer of cathode material and the layer of organic light emitting material on top of and sides of the upper partition layers.

34. The method of claim 33, after the etching to remove the layer of cathode material and the layer of organic light emitting material on top of and sides of the upper partition layers, further comprising re-encapsulating the remaining layer of cathode material and the layer of organic light emitting material.

35. The manufacturing method of claim 33, wherein, Before the etching a portion of the encapsulation layer, the removing the layer of organic light emitting material on top of and sides of the upper partition layers further comprises forming a planarization layer on the encapsulation layer.

36. The manufacturing method of claim 31, wherein, The forming a plurality of partition structures between the anodes comprises: forming a first insulating layer between the pixel regions; forming a second insulating material layer on the first insulating layer; forming a first connecting electrode material layer on the second insulating material layer; etching the first connecting electrode material layer to form first connecting electrodes; forming a first support material layer, a first partition material layer, a second support material layer and a second partition material layer on the first connecting electrode in sequence; etching the first support material layer, the first partition material layer, the second support material layer and the second partition material layer to form a first support layer, a lower partition layer, a second support layer and an upper partition layer respectively; etching the sidewalls of the first support layer and the second support layer to make the edge of the lower partition layer beyond the edge of the first support layer and the edge of the upper partition layer beyond the edge of the second support layer; etching the second insulating material layer to form a second insulating layer covering the first insulating layer.

37. The manufacturing method of claim 36, after the forming the organic light emitting material layer covering the plurality of pixel regions and the plurality of partition structures, further comprising forming a cathode material layer; the cathode material layer at the edge of the pixel region and the first connecting electrode are electrically connected.

38. The manufacturing method of claim 36, wherein, the substrate further comprises a non-display region; when forming the anode in the pixel region, further comprising: forming a cathode power supply trace in the non-display region; after forming the second insulating material layer on the first insulating layer, further comprising: etching the second insulating material layer to form a first opening exposing at least part of the cathode power supply trace; etching the first connecting electrode material layer to form the first connecting electrode, comprising: etching the first connecting electrode material layer to form the first connecting electrode and a cathode connecting layer, the cathode connecting layer being electrically connected with the cathode power supply trace through the first opening.

39. The manufacturing method of claim 31, wherein, when forming the organic light emitting layer covering the plurality of pixel regions and the plurality of partition structures, the organic light emitting layer in the pixel region and the organic light emitting layer on the partition structure are disconnected with each other.

40. The manufacturing method of claim 31, wherein, the plurality of pixel regions comprise a first pixel region for displaying a first color, a second pixel region for displaying a second color and a third pixel region for displaying a third color, and the organic light emitting layer comprises a first organic light emitting layer, a second organic light emitting layer and a third organic light emitting layer with different light emitting colors, wherein the light emitting color of the first organic light emitting layer is the first color, the light emitting color of the second organic light emitting layer is the second color and the light emitting color of the third organic light emitting layer is the third color; forming the first organic light emitting layer emitting the first color light, comprising: forming a first organic light emitting material layer covering the plurality of pixel regions and the plurality of partition structures; removing the first organic light emitting material layer on the top surface and the sidewall of the upper partition layer; and removing the first organic light emitting material layer in the second pixel region and the third pixel region to form the first organic light emitting layer emitting the first color light in the first pixel region; forming the second organic light emitting layer emitting the second color light, comprising: forming a second organic light emitting material layer covering the plurality of pixel regions and the plurality of separation structures; removing the second organic light emitting material layer on the top surface and side surface of the upper separation layer; and removing the second organic light emitting material layer in the first pixel region and the second pixel region to form a second organic light emitting layer emitting a second color light in the second pixel region; forming a third organic light emitting layer emitting a third color light includes: forming a third organic light emitting material layer covering the plurality of pixel regions and the plurality of separation structures; removing the third organic light emitting material layer on the top surface and side surface of the upper separation layer; and removing the third organic light emitting material layer in the first pixel region and the second pixel region to form a third organic light emitting layer emitting a third color light in the third pixel region.

41. The manufacturing method of claim 40, wherein, the forming a first organic light emitting layer emitting a first color light further includes: after the forming a first organic light emitting material layer, a first cathode material layer covering the first organic light emitting material layer is formed, and a first encapsulation material layer encapsulating the first organic light emitting material layer and the first cathode material layer is formed; the removing the first organic light emitting material layer on the top surface and side surface of the upper separation layer includes etching part of the first encapsulation material layer to expose the first cathode material layer on the upper separation layer, and etching to remove the first cathode material layer and the first organic light emitting layer on the top surface and side surface of the upper separation layer; the forming a second organic light emitting layer emitting a second color light further includes: after the forming a second organic light emitting material layer, a second cathode material layer covering the second organic light emitting material layer is formed, and a second encapsulation material layer encapsulating the second organic light emitting material layer and the second cathode material layer is formed; the removing the second organic light emitting material layer on the top surface and side surface of the upper separation layer includes etching part of the second encapsulation material layer to expose the second cathode material layer on the upper separation layer, and etching to remove the second cathode material layer and the second organic light emitting layer on the top surface and side surface of the upper separation layer; the forming a third organic light emitting layer emitting a third color light further includes: after the forming a third organic light emitting material layer, a third cathode material layer covering the third organic light emitting material layer is formed, and a third encapsulation material layer encapsulating the third organic light emitting material layer and the third cathode material layer is formed; the removing the third organic light emitting material layer on the top surface and side surface of the upper separation layer includes etching part of the third encapsulation material layer to expose the third cathode material layer on the upper separation layer, and etching to remove the third cathode material layer and the third organic light emitting layer on the top surface and side surface of the upper separation layer; The first encapsulation material layer, the second encapsulation material layer, and the third encapsulation material layer are respectively formed as an encapsulation layer in the first pixel region, an encapsulation layer in the second pixel region, and an encapsulation layer in the third pixel region.

42. The manufacturing method of claim 41, wherein, The first encapsulation material layer includes a first sub-encapsulation material layer and a second sub-encapsulation material layer; the second encapsulation material layer includes a third sub-encapsulation material layer and a fourth sub-encapsulation material layer; and the third encapsulation material layer includes a fifth sub-encapsulation material layer and a sixth sub-encapsulation material layer.

43. The manufacturing method of claim 42, wherein The material of at least one of the first sub-encapsulation material layer, the third sub-encapsulation material, and the fifth sub-encapsulation material layer is at least one of aluminum oxide and titanium oxide.

44. The manufacturing method of claim 42, wherein The thickness of at least one of the first sub-encapsulation material layer, the third sub-encapsulation material layer, and the fifth sub-encapsulation material layer is greater than or equal to 30 nm.

45. The manufacturing method of claim 42, wherein The material of at least one of the second sub-encapsulation material layer, the fourth sub-encapsulation material layer, and the sixth sub-encapsulation material layer is one or more of SIN, SiO, and SiON.

46. The manufacturing method of claim 42, wherein The thickness of at least one of the second sub-encapsulation material layer, the fourth sub-encapsulation material layer, and the sixth sub-encapsulation material layer is greater than the height difference between the upper surface of the separation structure and the upper surface of the anode.

47. The manufacturing method of claim 41, wherein Before etching the first encapsulation material layer, the removing the first organic light-emitting material layer on the top surface and the side surface of the upper partition layer further includes forming a first planarization layer on the first encapsulation material layer; etching the first planarization layer and the partial first encapsulation material layer to expose the first cathode material layer on the upper partition layer; or, Before etching the second encapsulation material layer, the removing the second organic light-emitting material layer on the top surface and the side surface of the upper partition layer further includes forming a second planarization layer on the second encapsulation material layer; etching the second planarization layer and the partial second encapsulation material layer to expose the second cathode material layer on the upper partition layer; or, Before etching the third encapsulation material layer, the removing the third organic light-emitting material layer on the top surface and the side surface of the upper partition layer further includes forming a third planarization layer on the third encapsulation material layer; etching the third planarization layer and the partial third encapsulation material layer to expose the third cathode material layer on the upper partition layer; or, Before etching the first encapsulation material layer, the removing the first organic light-emitting material layer on the top surface and the side surface of the upper partition layer further includes forming a first planarization layer on the first encapsulation material layer; etching the first planarization layer and the partial first encapsulation material layer to expose the first cathode material layer on the upper partition layer; and, before the etching the partial second encapsulation material layer, the removing the second organic light emitting material layer on the top surface and side surface of the upper partition layer further comprises forming a second planarization layer on the second encapsulation material layer; etching the second planarization layer and the partial second encapsulation material layer to expose the second cathode material layer on the upper partition layer; or, before the etching the partial second encapsulation material layer, the removing the second organic light emitting material layer on the top surface and side surface of the upper partition layer further comprises forming a second planarization layer on the second encapsulation material layer; etching the second planarization layer and the partial second encapsulation material layer to expose the second cathode material layer on the upper partition layer; and, before the etching the partial third encapsulation material layer, the removing the third organic light emitting material layer on the top surface and side surface of the upper partition layer further comprises forming a third planarization layer on the third encapsulation material layer; etching the third planarization layer and the partial third encapsulation material layer to expose the third cathode material layer on the upper partition layer; or, before the etching the partial first encapsulation material layer, the removing the first organic light emitting material layer on the top surface and side surface of the upper partition layer further comprises forming a first planarization layer on the first encapsulation material layer; etching the first planarization layer and the partial first encapsulation material layer to expose the first cathode material layer on the upper partition layer; and, before the etching the partial third encapsulation material layer, the removing the third organic light emitting material layer on the top surface and side surface of the upper partition layer further comprises forming a third planarization layer on the third encapsulation material layer; etching the third planarization layer and the partial third encapsulation material layer to expose the third cathode material layer on the upper partition layer; or, before the etching the partial first encapsulation material layer, the removing the first organic light emitting material layer on the top surface and side surface of the upper partition layer further comprises forming a first planarization layer on the first encapsulation material layer; etching the first planarization layer and the partial first encapsulation material layer to expose the first cathode material layer on the upper partition layer; before the etching the partial second encapsulation material layer, the removing the second organic light emitting material layer on the top surface and side surface of the upper partition layer further comprises forming a second planarization layer on the second encapsulation material layer; etching the second planarization layer and the partial second encapsulation material layer to expose the second cathode material layer on the upper partition layer; and, before the etching the partial third encapsulation material layer, the removing the third organic light emitting material layer on the top surface and side surface of the upper partition layer further comprises forming a third planarization layer on the third encapsulation material layer; etching the third planarization layer and the partial third encapsulation material layer to expose the third cathode material layer on the upper partition layer.

48. The manufacturing method of claim 41, wherein, After the etching removes the first cathode material layer and the first organic light emitting material layer on the upper partition layer, the forming the first organic light emitting layer emitting light of the first color further comprises forming a first compensation encapsulating material layer to re-encapsulate the remaining first cathode material layer and the first organic light emitting material layer. After the etching removes the second cathode material layer and the second organic light emitting material layer on the upper partition layer, the forming the second organic light emitting layer emitting light of the second color further comprises forming a second compensation encapsulating material layer to re-encapsulate the remaining second cathode material layer and the second organic light emitting layer.

49. The manufacturing method of claim 48, wherein, a thickness of the first compensation encapsulating material layer is greater than or equal to a sum of thicknesses of the organic light emitting layer and the cathode; a thickness of the second compensation encapsulating material layer is greater than or equal to a sum of thicknesses of the organic light emitting layer and the cathode.

50. The manufacturing method of claim 41, after the forming the third organic light emitting layer in the third pixel region, the method further comprises: forming a fourth encapsulating layer on the first encapsulating layer, the second encapsulating layer, and the third encapsulating layer.

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