Power generation glass assembly for 5g communication, and preparation method therefor

Abstract

The present application relates to a power generation glass assembly for 5G communication, and a preparation method therefor. A patterned transparent conductive layer 2, an n-type semiconductor film layer 3, a CdS and CdTe semiconductor layer 4, a p-type semiconductor film layer 5 and a patterned back electrode layer 6 are sequentially provided on a high-transmittance ultra-clear glass substrate 1 from bottom to top, wherein the transparent conductive layer 2 is made of one of FTO, ITO and AZO; the n-type semiconductor film layer 3 is made of MgZnO; the semiconductor layer 4 is a CdS and CdTe semiconductor layer; the p-type semiconductor film layer 5 is a ZnTe:Cu p-type semiconductor film layer; and the back electrode layer 6 is made of Mo, Al or Cr. The present application has the following advantages: the preparation method is simple and is easy to operate, thereby facilitating large-scale industrial production; and the resulting power generation glass assembly for 5G communication has an average loss of 4.5-4.9 db in a 2-5 GHz communication frequency band, and not only can a power generation function be implemented, but the transmission of 5G signals can also be facilitated.

Description

A power-generating glass assembly for 5G communication and a preparation method thereof

[0001] The present application claims priority to the Chinese patent application No. 202410825989.3, filed on June 25, 2024, and entitled "A power-generating glass assembly for 5G communication and a preparation method thereof", the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0002] The present application belongs to the technical field of 5G communication, and in particular relates to a power-generating glass assembly for 5G communication and a preparation method thereof. BACKGROUND

[0003] With the development of 5G communication technology (5th Generation Mobile Communication Technology), the traditional power-generating glass metal film layer has a great attenuation to 5G high-frequency communication signals, and the loss in the 2GHz-5GHz frequency band communication is about 50db. In cities with a large number of glass curtain walls, the complex electromagnetic environment brings great challenges to the deployment of high-frequency communication and indoor communication coverage. Therefore, it is of great application value to research and develop power-generating glass for 5G communication. However, the related field research is relatively scarce, and it is necessary to carry out related research and develop new preparation methods to improve its application value. SUMMARY

[0004] The purpose of the present application is to make up for the deficiencies of the prior art, and to provide a power-generating glass assembly for 5G communication and a preparation method thereof. The method prepares a power-generating glass with high 5G signal transmission by designing a power-generating glass film layer structure conducive to signal transmission and a special plating process.

[0005] In order to achieve the above-mentioned purpose, the technical solution adopted by the present application is as follows:

[0006] On the one hand, the present application provides a power-generating glass assembly for 5G communication, which has the following structure: a patterned (partially patterned or entirely patterned) transparent conductive layer 2, an n-type semiconductor film layer 3, a CdS and CdTe semiconductor layer 4, a p-type semiconductor film layer 5, and a patterned (partially patterned or entirely patterned) back electrode layer 6 are sequentially arranged on a high-transmission ultra-white glass substrate 1 from bottom to top.

[0007] In a possible implementation, the n-type semiconductor film layer 3, the CdS and CdTe semiconductor layer 4, and the p-type semiconductor film layer 5 are all film layers with a patterned (partially patterned or entirely patterned) structure.

[0008] In a possible implementation, the transparent conductive layer 2 is one of an FTO film layer, an ITO film layer, and an AZO film layer.

[0009] In a possible implementation, the n-type semiconductor film layer 3 is an MgZnO film layer.

[0010] In a possible implementation, the semiconductor layer 4 is a CdS and CdTe semiconductor layer.

[0011] In a possible implementation, the p-type semiconductor film layer 5 is a p-type semiconductor film layer of ZnTe:Cu.

[0012] In a possible implementation, the back electrode layer 6 is a Mo film layer, an Al film layer, or a Cr film layer.

[0013] In a possible implementation, the patterned structure is a cross shape, and the length and width of the structure belong to λ / 10-λ, where λ is the communication wavelength.

[0014] In a possible implementation, the position of the patterned structure is filled with an insulating high-low refractive index combination of alternating antireflection films. The use of alternating antireflection films can effectively realize the transmission of visible light.

[0015] In a possible implementation, the alternating antireflection film is a SiO2 / SiN film system, a SiO2 / ZrO2 film system, a SiO2 / TiO2 film system, a SiO2 / AL2O3 film system, or a porous AlPO4 / SiN film system.

[0016] In a possible implementation, the oxide film layer filled in the cross shape is an under-oxygen film layer, or the cross shape uses an atomic layer deposition method to coat the groove wall with an oxygen barrier film of about 10 nanometers.

[0017] In a possible implementation, the oxide film layer is a SiO2 film layer, a ZrO2 film layer, a TiO2, an AL2O3 film layer, or a porous AlPO4 film layer.

[0018] In another aspect, the embodiments of the present application provide a preparation method of a power generation glass assembly for 5G communication, including the following steps:

[0019] (A) cleaning and activating the glass substrate;

[0020] (B) first pasting a cross-shaped high-temperature adhesive tape or high-temperature ink on the glass substrate, then plating an FTO, ITO, or AZO film layer as a transparent conductive layer, and then removing the high-temperature adhesive tape or high-temperature ink, or removing the high-temperature adhesive tape or high-temperature ink after the entire film plating process is completed to realize a full-through structure;

[0021] (C) By means of magnetron sputtering, depositing the alternating antireflection film of high and low refractive index combination in the cross-shaped groove prepared in step (B), and using photoresist or high-temperature-resistant ink to protect the transparent conductive layer so as to prevent the alternating antireflection film from being placed on the transparent conductive layer;

[0022] (D) Depositing a MgZnO film layer with a thickness of 80 nm-150 nm on the substrate prepared in step (C) by means of magnetron sputtering;

[0023] (E) Depositing CdS and CdTe semiconductor layers on the substrate prepared in step (D) by means of near-space sublimation;

[0024] (F) Preparing a ZnTe:Cu film layer with a thickness of 10 nm-50 nm as a p-type semiconductor film layer on the substrate prepared in step (E) by means of magnetron sputtering;

[0025] (G) Sticking a cross-shaped high-temperature adhesive tape or high-temperature-resistant ink on the substrate prepared in step (F), then depositing a Mo film layer, an Al film layer or a Cr film layer as a back electrode layer by means of magnetron sputtering, and then removing the high-temperature adhesive tape or high-temperature-resistant ink.

[0026] In a possible implementation, the alternating antireflection film is a SiO2 / SiN film system, a SiO2 / ZrO2 film system, a SiO2 / TiO2 film system, a SiO2 / AL2O3 film system or a porous AlPO4 / SiN film system.

[0027] In another aspect, the application provides a method for preparing a power-generating glass assembly for 5G communication, comprising:

[0028] (1) cleaning and activating a glass substrate;

[0029] (2) depositing an FTO, ITO or AZO film layer on the glass substrate as a transparent conductive layer;

[0030] (3) depositing an alternating antireflection film of high and low refractive index combination in the groove on the transparent conductive layer by means of low-power magnetron sputtering;

[0031] (4) depositing a MgZnO film layer on the substrate prepared in step (3) by means of magnetron sputtering;

[0032] (5) depositing CdS and CdTe semiconductor layers on the substrate prepared in step (4) by means of near-space sublimation;

[0033] (6) preparing a ZnTe:Cu film layer with a thickness of 10 nm-50 nm as a p-type semiconductor film layer on the substrate prepared in step (5) by means of magnetron sputtering;

[0034] (7) Depositing Mo film layer, Al film layer or Cr film layer as back electrode layer on the substrate prepared in step (6) by magnetron sputtering method, thickness is 200-300 nm;

[0035] (8) Preparing cross-shaped groove on the back electrode layer on the glass substrate by laser etching.

[0036] In a possible implementation, after step (8), the method further comprises: depositing insulating high-low refractive index combined alternating antireflection film in the groove on the back electrode layer by magnetron sputtering.

[0037] In a possible implementation, the alternating antireflection film is SiO2 / SiN film system, SiO2 / ZrO2 film system, SiO2 / TiO2 film system, SiO2 / AL2O3 film system or porous AlPO4 / SiN film system.

[0038] In a possible implementation, the preparation of the AZO transparent conductive layer uses high-purity AZO (zinc aluminum oxide) target material, mass purity is 99.99%, wherein ZnO mass content is 97.5%-98.5%, Al2O3 mass content is 1.5-2.5%; when preparing the AZO transparent conductive layer, first adjust the pressure in the cavity used to 6.0×10 -6 pa, set the sputtering power to 6000-8000w, the voltage to 560-620v, the Ar (argon) flow to 200sccm when starting the glow, maintain the pressure to 3.0×10 -3 torr-3.5×10 -3 torr, the substrate holder heating temperature to 200℃, and perform film plating; wherein the substrate holder is used to set the substrate prepared under the current process of the power generation glass assembly.

[0039] In a possible implementation, the preparation of the ITO transparent conductive layer uses high-purity ITO target material, mass purity is 99.99%, when preparing the ITO transparent conductive layer, first adjust the pressure in the cavity used to 5.5×10 -6 pa, use direct current power, the sputtering power is 3000-4000w, the voltage is 500-570v, the Ar (argon) flow is 200sccm when starting the glow, the pressure is maintained to 3.5×10 -3 torr-4.0×10 -3 torr, the substrate holder heating temperature is 200℃, and film plating is performed; wherein the substrate holder is used to set the substrate prepared under the current process of the power generation glass assembly.

[0040] In a possible implementation, the n-type semiconductor film layer (MgZnO film layer) is prepared by the following method: a high-purity (99.99% in mass) MgZnO target is used, the pressure in the chamber is adjusted to 6.0×10 -6 pa before the MgZnO film layer is prepared, the sputtering power is set to 4900w-5100w, and the voltage is 600V; the substrate on which the power generation glass assembly has been prepared is put into the chamber, the Ar flow is 200sccm when the glow is started, and the pressure is maintained at 2.0×10 -3 torr-2.5×10 -3 torr; the substrate reciprocates with the substrate holder to control the film thickness and uniformity, the film is plated at a substrate holder heating temperature of 300-400℃, and the thickness of the MgZnO film layer is 80-150nm.

[0041] In a possible implementation, the CdS and CdTe semiconductor layers are prepared by the following method: the pressure in the chamber is adjusted to 6.0×10 -2 pa, the chamber and the substrate are heated by infrared uniform radiation, the chamber and the substrate are maintained at 450-550℃, the Ar gas is reciprocally filled in the chamber and reciprocally pumped out, the concentration of pollutants in the chamber is reduced, and the reciprocating frequency is not less than 3 times; the CdS layer with a thickness of 30-80nm is deposited by sublimating CdS through a heat source, the baffle is opened to block the CdS sublimation port, the CdTe heat source is opened, and then the CdTe layer with a thickness of about 1-5μm is deposited.

[0042] In a possible implementation, the p-type semiconductor film layer (ZnTe:Cu film layer) is prepared by the following method: the chamber is pumped to 6.0×10 -6 Pa-5.0×10 -5 Pa, two target positions of ZnTe and Cu targets with a mass purity of 99.99% are used, a direct current magnetron sputtering method is used, a direct current power of 500W is used, the Ar flow is 100sccm when the glow is started, the pressure is maintained at 2.5×10 -3 torr, and the sputtering plating is performed.

[0043] In a possible implementation, the p-type semiconductor film layer (ZnTe:Cu film layer) is prepared by the following method: the chamber is pumped to 6.0×10 -6 Pa-5.0×10 -5 Pa, two target positions of ZnTe and Cu targets with a mass purity of 99.99% are used, a direct current magnetron sputtering method is used, a direct current power of 500W is used, the Ar flow is 100sccm when the glow is started, the pressure is maintained at 2.5×10 -3 torr, and the sputtering plating is performed.

[0044] In one possible implementation, the back electrode layer (Mo film, Al film, or Cr film) is prepared as follows: the cavity is evacuated to 6.0 × 10⁻⁶. -6 Pa – 5.0 × 10 -5 Pa, the target material is Mo, Al, or Cr, with a mass purity of 99.99%; the magnetron sputtering method used is DC magnetron sputtering, using a 300W DC power supply, with an Ar flow rate of 100 sccm at ignition, and the vacuum level maintained at 2.5 × 10⁻⁶. -3 Torr is used to perform sputtering deposition to deposit a metal thin film with a thickness of 200nm-300nm.

[0045] In one possible implementation, the cleaning and activation method is as follows: sequentially cleaning with alkaline solution and then with acid solution to remove surface impurities.

[0046] In one possible implementation, the alkaline cleaning step is as follows: soaking in a mixed solution of water and ethanol with a mass percentage of 5%-10% sodium hydroxide for 2-3 minutes, followed by rinsing with deionized water.

[0047] In one possible implementation, the acid cleaning step is as follows: soaking in a 3%-6% hydrochloric acid solution for 3-5 minutes, rinsing with deionized water, and drying.

[0048] In one possible implementation, the volume ratio of water to ethanol in the sodium hydroxide-ethanol mixture is 1:5.

[0049] The beneficial effects of this application are:

[0050] The preparation method of this application is simple and easy to operate, which is conducive to large-scale industrial production. The power generation glass component for 5G communication obtained has an average loss of 4.5dB-4.9dB in the 2GHz-5GHz communication frequency band. It can not only realize the power generation function, but also facilitate the transmission of 5G signals, realize the effective penetration of 5G signals, and realize the partial transmission of visible light. It is in line with the future industrial development direction and is conducive to promoting the technological upgrading of related industries. Attached Figure Description

[0051] The accompanying drawings, which are provided to further illustrate this application and form part of this application, illustrate exemplary embodiments of this application and are used to explain this application, but do not constitute an undue limitation of this application.

[0052] Figure 1 is a schematic diagram of the structure of a power-generating glass assembly for 5G communication according to an embodiment of this application;

[0053] Figure 2 is a structural diagram of the power-generating glass with electrode patterning in Embodiment 1 of this application;

[0054] Fig. 3 is a diagram of a patterned power generation glass structure of the embodiment 2 of the present application;

[0055] Fig. 4 is a photograph of a patterned construction of the embodiment 2 of the present application. DETAILED DESCRIPTION

[0056] For the purpose of the present application, technical solutions, and advantages, the present application is further described in detail below with reference to the accompanying drawings and examples. Obviously, the described examples are only a part of the examples of the present application, rather than all the examples. Based on the examples in the present application, all other examples obtained by those skilled in the art belong to the scope of protection of the present application.

[0057] The present application is further described below in combination with Figs. 1-4:

[0058] In a first aspect, the present application provides a preparation method of a power generation glass assembly for 5G communication, and the specific implementation steps are as follows:

[0059] (1) immerse the high-transmission ultra-white glass substrate 1 in a 10% sodium hydroxide mixed alkali solution of water and ethanol (volume ratio of water to ethanol is 1:5) for 2 minutes, and then rinse with deionized water after taking it out; then immerse it in a 6% hydrochloric acid solution for 3 minutes, and then rinse with deionized water after taking it out, and dry;

[0060] (2) coat a layer of AZO transparent conductive layer 2 (resistance less than 12 Ω / □ (square resistance)) on the upper surface of the high-transmission ultra-white glass substrate 1, and coat photoresist on the upper surface of the AZO transparent conductive layer 2, and then etch the AZO transparent conductive layer 2 by laser etching to make it present a cross-shaped groove structure, and the length and width dimensions of the groove are both in the range of λ / 10 to λ, wherein λ is the wavelength of the electromagnetic wave used for communication; the preparation of the AZO transparent conductive layer uses high-purity AZO (zinc aluminum oxide) target material with a mass purity of 99.99%, of which the mass content of ZnO is 98% and the mass content of Al2O3 is 2.0%; adjust the pressure of the cavity to 6.0x10 -6 pa, the sputtering power is 7000w, the voltage is 600V; when the light is turned on, the Ar (argon) flow rate is 200sccm, the pressure is maintained at 3.0x10 -3 torr, and the substrate holder heating temperature is 200℃, and the film is coated; wherein the substrate holder is used to erect the prepared substrate of the power generation glass assembly under the current process.

[0061] (3) deposit a layer of SiO2 film 81 in the cross-shaped groove by low-power magnetron sputtering, then deposit a layer of SiN film 82, and then remove the photoresist;

[0062] (4) On the substrate prepared in step (3) (the part of the power generation glass assembly prepared in the current process), an n-type semiconductor film layer 3 of MgZnO material is deposited by magnetron sputtering. The target material is high-purity MgZnO target material with a mass purity of 99.99%. The chamber is vacuumed to a pressure of 6.0x10 -6 Pa, the sputtering power is 5000w, the voltage is 600V, the substrate enters the chamber, the Ar flow is 200sccm when the glow is turned on, the pressure is maintained at 2.5x10 -3 torr, the substrate reciprocates with the substrate holder to control the film thickness and uniformity, the substrate is heated to 400℃ for film deposition, and the thickness of the MgZnO film is 100nm.

[0063] (5) CdS and CdTe semiconductor layers 4 are deposited on the substrate prepared in step (4) by near-space sublimation. The sputtering chamber is vacuumed to a pressure of 6.0x10 -2 Pa, heated by infrared uniform radiation, the chamber and the substrate are maintained at 500℃, Ar gas is reciprocally filled and vacuumed in the chamber to reduce the concentration of pollutants in the chamber, the reciprocation is performed 3 times, CdS is sublimated by a heat source to deposit a 50nm CdS layer, the baffle is opened to block the CdS sublimation port, and then the CdTe heat source is opened to deposit a 1.4μm CdTe layer.

[0064] (6) A p-type semiconductor film layer 5 of ZnTe:Cu is deposited on the substrate prepared in step (5). The sputtering chamber is vacuumed to a pressure of 6.0x10 -6 Pa, two target positions (ZnTe target and Cu target) are used, and the mass purity is 99.99%; direct current sputtering is performed, the power of the direct current power supply is 500W, the Ar flow is 100sccm when the glow is turned on, and the pressure is maintained at 2.5x10 -3 torr, sputtering film deposition is performed, and a 30nm thick ZnTe:Cu film is deposited;

[0065] (7) A back electrode layer 6 is prepared on the substrate prepared in step (6). The back electrode layer is made of Mo and is deposited by magnetron sputtering. The chamber pressure is vacuumed to 6.0x10 -6 , the target material is a metal Mo target with a mass purity of 99.99%; direct current magnetron sputtering is used, the power of the direct current power supply is 300W, the Ar flow is 100sccm when the glow is turned on, and the pressure is maintained at 2.5x10 -3torr, sputtering film, 200nm thick metal film; the back electrode layer on the surface of the entire coating photoresist, and then etching Mo electrode layer using laser etching method, etching out the back electrode layer on the cross-shaped recess, the structure of the long 17mm, wide 11mm; again through the low-power magnetron sputtering in the cross-shaped recess in the deposition of a layer of SiO2 film 83, after deposition of a layer of SiN film 84, the photoresist is removed, namely a 5G communication power glass assembly, the average loss of 2GHz-5GHz communication frequency band is 4.9db.

[0066] In a second aspect, the embodiment of the present application provides a preparation method of a 5G communication power glass assembly, and the specific implementation steps are as follows:

[0067] (1) the high-transparency ultra-white glass substrate is immersed in 5% sodium hydroxide water and ethanol mixed lye (the volume ratio of water and ethanol is 1:5) for 3 minutes, and then taken out and washed with deionized water; then immersed in 3% hydrochloric acid solution for 5 minutes, and then taken out and washed with deionized water and dried;

[0068] (2) the high-transparency ultra-white glass substrate 1 is pasted with a patterned high-temperature adhesive tape on the upper surface, and then a layer of AZO transparent conductive layer 2 (with a resistance of less than 12Ω / □) is plated; the preparation of the AZO transparent conductive layer adopts high-purity AZO (zinc aluminum oxide) target material with a mass purity of 99.99%, in which the mass content of ZnO is 97.5%, and the mass content of Al2O3 is 1.5%; the pressure of the cavity is adjusted to 6.0x10-6pa, the sputtering power is 6800w, the voltage is 580V, the Ar flow is 200sccm when the glow is started, and the pressure is maintained at 3.0x10 -3 torr, and the substrate holder heating temperature is 200℃, for film plating;

[0069] (3) the n-type semiconductor film layer 3 of MgZnO material is deposited on the substrate prepared in step (2) by using the magnetron sputtering method, the target material adopts high-purity MgZnO target material with a mass purity of 99.99%, the cavity pressure is vacuumed to 6.0x10 -6 pa, the sputtering power is set to 4900w, the voltage is 600V, the substrate enters the cavity, the Ar flow is 200sccm when the glow is started, the pressure is maintained at 2.0x10 -3 torr, the substrate reciprocates with the substrate holder to control the film thickness and uniformity, and the substrate heating temperature is 300℃, for MgZnO film layer plating, and the thickness of the MgZnO film layer is 80nm;

[0070] (4) after plating, the high-temperature adhesive tape is removed;

[0071] (5) using the close-spaced sublimation method, depositing CdS and CdTe semiconductor layers 4 on the substrate prepared in step (4); adjusting the pressure in the chamber to 1.0 Pa, heating by infrared uniform radiation, keeping the chamber and the substrate at 450°C, repeatedly filling Ar gas in the chamber and repeatedly vacuumizing, reducing the concentration of pollutants in the chamber, the number of repetitions being 3, sublimating CdS by a heat source to deposit a 30-nm-thick CdS layer, opening the shutter to block the CdS sublimation port, then depositing a 2.0-μm-thick CdTe layer by opening the CdTe heat source;

[0072] (6) depositing a p-type semiconductor film layer 5 of ZnTe:Cu on the substrate prepared in step (5), vacuumizing the pressure in the chamber to 9.0x10 -6 Pa, using two target sites, a ZnTe target and a Cu target, the mass purity being 99.99%; performing direct-current sputtering, using a direct-current power source with a power of 500 W, filling Ar at a flow rate of 100 sccm when the glow is started, maintaining the pressure at 2.5x10 -3 torr, performing sputter deposition, depositing a 10-nm-thick ZnTe:Cu film;

[0073] (7) providing a back electrode layer 6 on the substrate prepared in step (6), the back electrode layer being made of Mo material, deposited by using the magnetron sputtering method, vacuumizing the pressure in the chamber to 9.0x10 -6 , the target material being a metal Mo target, the mass purity being 99.99%; using direct-current magnetron sputtering, a direct-current power source with a power of 300 W, filling Ar at a flow rate of 100 sccm when the glow is started, maintaining the pressure at 2.5x10 -3 torr, performing sputter deposition, depositing a 300-nm-thick metal film; then using the laser etching method to etch the Mo electrode layer, preparing a cross-shaped groove with a length of 17 mm and a width of 11 mm, thus obtaining a power-generating glass assembly for 5G communication, the average loss of which in the 2GHz-5GHz communication frequency band being 4.8 db.

[0074] In a third aspect, the embodiments of the present application provide a preparation method of a power-generating glass assembly for 5G communication, the specific implementation steps being as follows:

[0075] (1) immersing a high-transparency ultra-white glass substrate in a 10% (mass percentage) sodium hydroxide aqueous-ethanol mixed alkali solution (the volume ratio of water to ethanol being 1:5) for 3 minutes, then washing with deionized water; then immersing in a 6% (mass percentage) hydrochloric acid solution for 3 minutes, then washing with deionized water and drying; the resistance being less than 16Ω / □); the preparation of the ITO transparent conductive layer, using high-purity ITO target material with a mass purity of 99.99%, vacuumizing the pressure in the chamber to 5.5x10 -6The PA is a direct current power supply, the sputtering power is 3000 W, the voltage is 500 V, the Ar (argon) flow is 200 sccm when the glow discharge is started, the pressure is maintained at 3.5x10 -3 torr, and the substrate holder heating temperature is 200°C to perform the film deposition.

[0076] (3) A MgZnOn semiconductor film layer 3 is deposited on the substrate prepared in step (2) by using a magnetron sputtering method. The target material is a high-purity MgZnO target material with a mass purity of 99.99%. The pressure in the cavity is vacuumed to 6.0x10 -6 Pa, the sputtering power is 5000 W, the voltage is 600 V, the substrate enters the cavity, the Ar flow is 200 sccm when the glow discharge is started, the pressure is maintained at 2.0x10 -3 torr, the substrate reciprocates with the substrate holder to control the film thickness and uniformity, the substrate heating temperature is 300°C to perform the film deposition, and the thickness of the MgZnO film is 80 nm.

[0077] (4) After the film deposition is completed, the high-temperature adhesive tape is removed.

[0078] (5) A CdS and CdTe semiconductor layer 4 is deposited on the substrate prepared in step (4) by using a near-space sublimation method. The pressure in the cavity is vacuumed to 6.0x10 -2 Pa, the cavity and the substrate are heated to 450°C by infrared uniform radiation, the Ar gas is reciprocally filled in the cavity and the cavity is reciprocally vacuumed to reduce the pollutant concentration in the cavity, the reciprocation is performed for 3 times, the CdS is sublimated by a heat source to deposit a 50 nm CdS layer, the baffle is opened to block the CdS sublimation port, the CdTe heat source is opened, and then a 1.4 μm CdTe layer is deposited.

[0079] (6) A p-type semiconductor film layer 5 of ZnTe:Cu is deposited on the substrate prepared in step (5). The sputtering cavity is vacuumed to 6.0x10 -6 Pa, two target positions are used, the ZnTe target and Cu, the mass purity is 99.99%, the direct current sputtering is used, the direct current power supply power is 500 W, the Ar flow is 100 sccm when the glow discharge is started, the pressure is maintained at 2.5x10-3 torr, the sputtering film deposition is performed, and a 10 nm ZnTe:Cu thin film is deposited.

[0080] (7) A back electrode layer 6 is arranged on the substrate prepared in step (6). The back electrode layer is Mo, and the magnetron sputtering method is used to deposit the back electrode layer. The cavity pressure is vacuumed to 9.0x10 -6 Pa, the target material is a metal Mo target with a mass purity of 99.99%, the direct current magnetron sputtering is used, the direct current power supply power is 300 W, the Ar flow is 100 sccm when the glow discharge is started, the pressure is maintained at 2.5x10 -3sputtering, a 200nm-thick metal film is plated; then a laser etching method is used to etch the Mo electrode layer to prepare a cross-shaped groove, the length of the groove is 17mm, and the width is 11mm, thereby obtaining a power generation glass assembly for 5G communication, the average loss of which in the 2-5GHz communication frequency band is 4.5db.

[0081] In a fourth aspect, the embodiments of the present application provide a preparation method of a power generation glass assembly for 5G communication, and the specific implementation steps are as follows:

[0082] (1) The high-transparency ultra-white glass substrate is immersed in a 10% (mass percentage) sodium hydroxide mixed alkali solution of water and ethanol (the volume ratio of water to ethanol is 1:5) for 3 minutes, and then taken out and washed with deionized water; then the glass substrate is immersed in a 6% (mass percentage) hydrochloric acid solution for 3 minutes, taken out and washed with deionized water, and dried;

[0083] (2) An ITO film is plated on the glass substrate as a transparent conductive layer (the resistance is less than 12Ω / □), and the preparation of the ITO transparent conductive layer uses high-purity ITO target material with a mass purity of 99.99%, the cavity pressure is vacuumed to 5.5x10 -6 pa, a direct current power source is used, the sputtering power is 4000w, the voltage is 570V, the Ar (argon) flow is 200sccm when the glow discharge is started, the pressure is maintained at 4.0x10-3torr, the substrate holder heating temperature is 200℃, and the film is plated.

[0084] (4) The MgZnO is deposited on the substrate prepared in step (3) by using a magnetron sputtering method, the target material uses high-purity (mass purity is 99.99%) MgZnO target material, the cavity pressure is adjusted to 6.0x10 -6 pa, the sputtering power is 5000w, the voltage is 600V; the substrate enters the cavity, the Ar flow is 200sccm when the glow discharge is started, the pressure is maintained at 2.5x10 -3 torr, the substrate is reciprocated with the substrate holder to control the film thickness and uniformity, the substrate heating temperature is 350℃ for film plating, and the thickness of the MgZnO film is 120nm;

[0085] (5) The CdS and CdTe semiconductor layers are deposited on the substrate prepared in step (4) by using a near-space sublimation method; the pressure of the entire film plating vacuum cavity is 6.0x10 -2Pa, the cavity and the substrate are kept at 500 DEG C by infrared uniform radiation heating, Ar gas is repeatedly filled and vacuumed in the cavity to reduce the concentration of pollutants in the cavity, and the number of reciprocation is 3 times; 50 nm of CdS layer is deposited by CdS sublimation through a heat source, the baffle is opened to block the CdS sublimation port, the CdTe heat source is opened, and then about 3 microns of CdTe layer is deposited;

[0086] (6) A ZnTe:Cu film with a thickness of 20 nm is prepared on the substrate prepared in step (5) as a p-type semiconductor film layer by a magnetron sputtering method; the sputtering cavity is vacuumed to 5.0x10 -5 Pa, two target sites, ZnTe target and Cu target, with a mass purity of 99.99%, are used, a direct current magnetron sputtering method is used, a direct current power source with a power of 500 W is used, Ar flow is filled at 100 sccm when the light is turned on, the pressure is maintained at 2.5x10 -3 torr, and sputter coating is performed;

[0087] (7) Al is deposited on the substrate prepared in step (6) as a back electrode layer by a magnetron sputtering method, with a mass purity of 99.99%; a direct current magnetron sputtering method is used, a direct current power source with a power of 300 W is used, Ar flow is filled at 100 sccm when the light is turned on, the pressure is maintained at 2.5x10 -3 torr, sputter coating is performed, and the thickness is 250 nm;

[0088] (8) A cross-shaped groove is etched on the entire film layer on the glass substrate by laser etching, the length of the groove is 17 mm, the width is 11 mm, and an alternating antireflection film of SiO2 / SiN is deposited in the cross-shaped groove by a magnetron sputtering method, thereby obtaining a power-generating glass assembly for 5G communication, and the average loss of the power-generating glass assembly in the 2GHz-5GHz communication frequency band is 4.5db.

[0089] In a fifth aspect, the embodiments of the present application provide a preparation method of a power-generating glass assembly for 5G communication, and the specific implementation steps are as follows:

[0090] (1) The high-transmission ultra-white glass substrate 1 is immersed in a 10% sodium hydroxide aqueous-ethanol mixed lye (the volume ratio of water to ethanol is 1:5) for 2 minutes, and then washed with deionized water after being taken out; then immersed in a 6% hydrochloric acid solution for 3 minutes, and then washed with deionized water after being taken out, and dried;

[0091] (2) first paste a cross shape high temperature adhesive tape on the glass substrate, then deposit a AZO transparent conductive layer 2 (resistance less than 12 Ω / □); the preparation of the AZO transparent conductive layer uses high purity AZO (zinc aluminum oxide) target material, mass purity is 99.99%, wherein the mass content of ZnO is 97.5%, the mass content of Al2O3 is 1.5%; the pressure of the cavity is adjusted to 6.0x10-6 Pa, the sputtering power is 6800 W, the voltage is 580 V, the Ar (argon) flow is 200 sccm when the glow is started, the pressure is maintained at 3.0x10-3 torr, the substrate holder heating temperature is 200℃, and the film is deposited; -3

[0092] (3) deposit an n-type semiconductor film layer 3 of MgZnO material on the substrate prepared in step (2) by using a magnetron sputtering method, the target material uses high purity MgZnO target material, mass purity is 99.99%, the pressure of the cavity is vacuumed to 6.0x10-6 Pa, the sputtering power is set to 4900 W, the voltage is 600 V, the substrate enters the cavity, the Ar flow is 200 sccm when the glow is started, the pressure is maintained at 2.0x10-3 torr, the substrate reciprocates with the substrate holder to control the film thickness and uniformity, the substrate heating temperature is 300℃, the MgZnO film layer is deposited, and the thickness of the MgZnO film layer is 100 nm; -6 -3

[0093] (4) deposit CdS and CdTe semiconductor layers 4 on the substrate prepared in step (3) by using a near-space sublimation method; the pressure of the cavity is adjusted to 1.0 Pa, the cavity and the substrate are heated by infrared uniform radiation and kept at 450℃, the cavity is reciprocally filled with Ar gas and vacuumed to reduce the concentration of pollutants in the cavity, the reciprocating frequency is 3 times, CdS is sublimated by a heat source to deposit a 30 nm CdS layer, the baffle is opened to block the CdS sublimation port, then the CdTe heat source is opened, and a 2.0 μm CdTe layer is deposited;

[0094] (5) deposit a p-type semiconductor film layer 5 of ZnTe:Cu on the substrate prepared in step (4), the pressure of the cavity is vacuumed to 9.0x10-6 Pa, two target positions are used, the ZnTe target and the Cu target, mass purity is 99.99%; direct current sputtering is performed, the direct current power is 500 W, the Ar flow is 100 sccm when the glow is started, the pressure is maintained at 2.5x10-3 torr, sputtering film deposition is performed, and a 10 nm thick ZnTe:Cu film is deposited; -6 -3

[0095] (6) set a back electrode layer 6 on the substrate prepared in step (5), the back electrode layer uses Mo material and is deposited by using a magnetron sputtering method, the pressure of the cavity is vacuumed to 9.0x10-6 Pa, and the back electrode layer is deposited by using a magnetron sputtering method.​​​​​-6 Pa, the target material is a metal Mo target with a mass purity of 99.99%; a direct current magnetic control sputtering is adopted, a direct current power source power is 300 W, an Ar flow rate is 100 sccm when starting to glow, and a pressure is maintained at 2.5 x 10 -3 torr to perform sputtering film plating, and a 300 nm thick Mo metal film is plated;

[0096] (7) The high-temperature adhesive tape is removed from the substrate prepared in step (6) to realize a cross-shaped groove 85 in the transparent conductive layer 2, the MgZnO film layer (n-type semiconductor film layer 3), the semiconductor layer 4, the p-type semiconductor film layer 5, and the back electrode layer 6. The length and width dimensions of the cross-shaped groove are both in the range of λ / 10-λ, and λ is the wavelength of the electromagnetic wave used for communication. An alternating antireflection film of SiO2 / AL2O3 is deposited in the cross-shaped groove by a magnetron sputtering method, thereby obtaining a power generation glass assembly for 5G communication, which has an average loss of 4.5 db in the 2 GHz-5 GHz communication frequency band.

[0097] In a sixth aspect, the embodiments of the present application further provide a power generation glass assembly for 5G communication, which has the following structure: a transparent conductive layer 2, an n-type semiconductor film layer 3, a CdS and CdTe semiconductor layer 4, a p-type semiconductor film layer 5, and a back electrode layer 6 of a patterned structure 8 are sequentially arranged on a high-transmittance ultra-white glass substrate 1.

[0098] The n-type semiconductor film layer 3, the CdS and CdTe semiconductor layer 4, and the p-type semiconductor film layer 5 are all film layers provided with the patterned structure 8. The patterned structure 8 is in a cross-shaped form, and the length and width dimensions of the patterned structure 8 are both in the range of λ / 10-λ, and λ is the wavelength of the electromagnetic wave used for communication. The position of the patterned structure 8 can be filled with an alternating antireflection film composed of insulating and high-low refractive index combinations, such as a SiO2 / SiN film system, a SiO2 / ZrO2 film system, a SiO2 / TiO2 film system, a SiO2 / AL2O3 film system, or a porous AlPO4 / SiN film system. The oxide film layer filled in the cross-shaped form is an under-oxygen film layer, or the cross-shaped form is coated with an oxygen barrier film of about 10 nanometers on the groove wall by an atomic layer deposition method.

[0099] The transparent conductive layer 2 is one of an FTO film layer, an ITO film layer, and an AZO film layer; the n-type semiconductor film layer 3 is a MgZnO film layer; the semiconductor layer 4 is a CdS and CdTe semiconductor layer; the p-type semiconductor film layer 5 is a ZnTe:Cu p-type semiconductor film layer; and the back electrode layer 6 is a Mo film layer, an Al film layer, or a Cr film layer.

[0100] The above description is only the preferred embodiment of the present application, and is not used to limit the present application, any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of protection of the present application.

Claims

1. A power-generating glass assembly for 5G communication, characterized in that, It has the following structure: a patterned transparent conductive layer (2), an n-type semiconductor film layer (3), a CdS and CdTe semiconductor layer (4), a p-type semiconductor film layer (5), and a patterned back electrode layer (6) are sequentially arranged from bottom to top on a high-transparency ultra-white glass substrate (1).

2. The power-generating glass assembly for 5G communication according to claim 1, characterized in that: The n-type semiconductor film layer (3), CdS and CdTe semiconductor layers (4) and p-type semiconductor film layer (5) are all film layers with patterned structures.

3. A power-generating glass assembly for 5G communication according to claim 1 or 2, characterized in that: The transparent conductive layer (2) is one of FTO film, ITO film, or AZO film; the n-type semiconductor film (3) is MgZnO film; the semiconductor layer (4) is CdS and CdTe semiconductor layer; the p-type semiconductor film (5) is a ZnTe:Cu p-type semiconductor film; and the back electrode layer (6) is a Mo film, Al film, or Cr film.

4. A power-generating glass assembly for 5G communication according to claim 1 or 2, characterized in that: The patterned structure is a cross shape, and the length and width dimensions of the patterned structure are between λ / 10 and λ, where λ is the communication wavelength.

5. A power-generating glass assembly for 5G communication according to claim 1 or 2, characterized in that: The patterned structure is filled with an alternating antireflective coating of insulating high and low refractive index, wherein the alternating antireflective coating of insulating high and low refractive index is a SiO2 / SiN film system, a SiO2 / ZrO2 film system, a SiO2 / TiO2 film system, a SiO2 / AL2O3 film system, or a porous AlPO4 / SiN film system.

6. A power-generating glass assembly for 5G communication according to claim 4, characterized in that: The oxide film filling the cross shape is an oxygen-deficient film layer, or the cross shape is coated with a 10-nanometer oxygen barrier film on the groove wall using atomic layer deposition.

7. A method for preparing a power-generating glass component for 5G communication, characterized in that, Includes the following steps: (A) Clean and activate the glass substrate; (B) First, paste a cross-shaped high-temperature tape or high-temperature resistant ink on the glass substrate, then deposit an FTO, ITO or AZO film layer as a transparent conductive layer, and then remove the high-temperature tape or high-temperature resistant ink. (C) An alternating antireflective film with a combination of high and low refractive indices is deposited in the cross-shaped grooves made in step (B) by magnetron sputtering. The transparent conductive layer is protected by photoresist or high-temperature resistant ink to prevent the alternating antireflective film from being placed on the transparent conductive layer. (D) A MgZnO film with a thickness of 80nm-150nm is deposited on the substrate obtained in step (C) by magnetron sputtering. (E) Using the near-space sublimation method, CdS and CdTe semiconductor layers are deposited on the substrate prepared in step (D); (F) A ZnTe:Cu film with a thickness of 10nm-50nm is prepared on the substrate obtained in step (E) by magnetron sputtering as a p-type semiconductor film layer; (G) A cross-shaped high-temperature tape or high-temperature resistant ink is pasted onto the substrate obtained in step (F), and then a Mo film, Al film or Cr film is deposited as a back electrode layer by magnetron sputtering. Then the high-temperature tape or high-temperature resistant ink is removed.

8. A method for preparing a power-generating glass component for 5G communication, characterized in that, Includes the following steps: (A) Clean and activate the glass substrate; (B) First, paste a cross-shaped high-temperature tape or high-temperature resistant ink on the glass substrate, and then deposit an FTO, ITO or AZO film layer as a transparent conductive layer. (C) A MgZnO film with a thickness of 80nm-150nm is deposited on the substrate obtained in step (B) by magnetron sputtering. (D) Using the near-space sublimation method, CdS and CdTe semiconductor layers are deposited on the substrate prepared in step (C); (E) A ZnTe:Cu film with a thickness of 10nm-50nm is prepared on the substrate obtained in step (D) by magnetron sputtering as a p-type semiconductor film layer. (F) A Mo film, an Al film, or a Cr film is deposited on the substrate obtained in step (E) using magnetron sputtering as a back electrode layer. (G) Remove high-temperature tape or high-temperature resistant ink from the substrate obtained in step (F) to form cross-shaped grooves on the transparent conductive layer, the MgZnO film layer, the semiconductor layer, the p-type semiconductor film layer, and the back electrode layer; deposit an alternating antireflection film with a combination of insulating high and low refractive indices in the cross-shaped grooves.

9. The method for preparing a power-generating glass assembly for 5G communication according to claim 7 or 8, characterized in that, The alternating antireflection membrane is a SiO2 / SiN membrane system, a SiO2 / ZrO2 membrane system, a SiO2 / TiO2 membrane system, a SiO2 / AL2O3 membrane system, or a porous AlPO4 / SiN membrane system.

10. A method for preparing a power-generating glass component for 5G communication, characterized in that, Includes the following steps: (1) Clean and activate the glass substrate; (2) Deposit an FTO, ITO or AZO film layer on a glass substrate as a transparent conductive layer; etch a groove with a cross shape on the transparent conductive layer; (3) An alternating antireflective film with a combination of high and low refractive indices is deposited in the grooves on the transparent conductive layer by low-power magnetron sputtering. (4) A MgZnO film is deposited on the substrate obtained in step (3) by magnetron sputtering. (5) CdS and CdTe semiconductor layers are deposited on the substrate obtained in step (4) using the near-space sublimation method; (6) A ZnTe:Cu film with a thickness of 10nm-50nm is prepared on the substrate obtained in step (5) by magnetron sputtering as a p-type semiconductor film. (7) On the substrate obtained in step (6), a Mo film, Al film or Cr film is deposited as a back electrode layer by magnetron sputtering, with a thickness of 200nm-300nm. (8) A cross-shaped groove is prepared on the back electrode layer on the glass substrate by laser etching.

11. The method for preparing a power-generating glass assembly for 5G communication according to claim 10, characterized in that: After step (8): An alternating antireflection film with a combination of high and low refractive indices is deposited in the groove on the back electrode layer by magnetron sputtering, wherein the alternating antireflection film is a SiO2 / SiN film system, a SiO2 / ZrO2 film system, a SiO2 / TiO2 film system, a SiO2 / AL2O3 film system or a porous AlPO4 / SiN film system.

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