Detection apparatus for plasma surface etching process

Abstract

A detection apparatus for a plasma surface etching process, the detection apparatus comprising: a detection stage, which is used for detecting the plasma surface etching process state of an object to be inspected; a detection hole, the detection hole being disposed at any position on the detection stage, and having a depth on the detection stage; and a detector, which is disposed on at least one side within the detection hole, wherein when the detection of the surface etching process state of said object is performed on the detection stage and the detection hole is aligned with the position of said object under detection, the detector disposed in the detection hole is used to detect the surface etching process state of said object.

Description

A plasma surface etching process detection device Technical Field

[0001] This case relates to a plasma surface etching process detection device, specifically a detector that can detect the progress status of a wafer plasma surface etching process. Background Technology

[0002] It is well known that detecting the etching consistency in the plasma surface etching process of wafers is a very important task. In the semiconductor process or wafer chip industry, a lot of manpower and resources must be invested in testing to solve the problem of plasma etching consistency.

[0003] Figure 1 shows the state of non-uniform etching in the conventional wafer plasma surface etching process. As shown in Figure 1(a), materials A and B have different spectral intensities and wavelength ranges. Figure 1(b) shows that materials A and B have different etching depths in the wafer plasma surface etching process.

[0004] As disclosed in the prior art, Taiwan Patent "TWI388243" describes a plasma reactor with minimal DC coils for improving plasma uniformity and reducing component damage, particularly for tips, solenoids, and mirror fields. The plasma reactor for processing a working component includes a vacuum chamber and a working component support pad. The vacuum chamber is defined by a side wall and a top cover. The working component support pad has a working component support surface located within the chamber, facing the top cover, and includes a cathode electrode. An RF generator is coupled to the cathode electrode. Plasma distribution can be controlled by an outer annular inner electromagnet located in a first plane covering the working component support surface, an outer annular outer electromagnet located in a second plane covering the working component support surface and having a diameter larger than the inner electromagnet, and an outer annular bottom electromagnet located in a third plane covering the working component support surface. A DC current is supplied to each of the inner, outer, and bottom electromagnets.

[0005] According to the prior art Taiwan Patent "TW20223971", a plasma etching apparatus for etching a semiconductor substrate is provided. The plasma etching apparatus includes: a plasma chamber; a plasma generating device for maintaining a plasma within the plasma chamber; a substrate support disposed within the plasma chamber for supporting the semiconductor substrate, the substrate support including a conductive structure; a power supply for providing an RF signal having an RF power to the conductive structure; and an annular dielectric ring structure including a back surface, the back surface including a conductive coating; wherein the conductive structure is spaced apart from the conductive coating and extends below the conductive coating, such that when RF power is provided to the conductive structure, the RF power is coupled to the conductive coating, as shown in FIG2, a prior art RF drive to wafer edge distance diagram.

[0006] As described in a prior art Taiwan patent "TW202127147", this invention enhances the imaging of a target feature onto a pattern on a substrate. This may include adding one or more auxiliary features to one or more locations in a patterned device pattern adjacent to one or more target features in the patterned device pattern. The addition of the one or more auxiliary features is based on two or more different aggregation locations in the substrate. This also includes shifting the patterned device pattern and / or a design layout based on the two or more different aggregation locations and the one or more added auxiliary features. This can be used to improve asymmetry across a slit. Adding the one or more auxiliary features to the pattern and shifting the pattern and / or the design layout enhances the target features by reducing a shift caused by a slit-across-slit asymmetry in a multifocal lithography device. This can reduce the shift across an entire imaging field.

[0007] The aforementioned prior art and previous patents are unable to detect the surface etching process status of the wafer. In view of the above-mentioned shortcomings, the inventor felt that they were not perfect, so he devoted his efforts to researching and overcoming them. Based on his years of experience in this industry, he developed a plasma surface etching process detection device, which uses a simple detector placed on at least one side of the detection hole. When the detection stage detects the plasma surface etching process status, and the detection hole is aligned with the detection position, the detector placed in the detection hole is used to detect the surface etching process status of the plasma. Summary of the Invention

[0008] In view of this, the present invention proposes a plasma surface etching process detection device, comprising: a detection stage for detecting the plasma surface etching process state of a test object; a detection hole placed at any position on the detection stage, the detection hole having a depth on the detection stage; and a detector placed on at least one side of the detection hole; wherein when the detection stage detects the surface etching process state of the test object, when the detection hole is aligned with the detected position of the test object, the detector placed in the detection hole is used to detect the surface etching process state of the test object.

[0009] As described above, in the plasma surface etching process detection device, the surface etching process state of the object under test is the plasma surface etching process state of the wafer.

[0010] The plasma surface etching process detection device described above is a miniature spectrometer.

[0011] In the plasma surface etching process detection device described above, the depth of the detection hole is 0.1mm-100mm.

[0012] As described above, in the plasma surface etching process detection device, the wavelength detection range of the micro spectrometer is 200nm-1200nm.

[0013] As described above, in the plasma surface etching process detection device, the spectral resolution detection range of the miniature spectrometer is 0.1nm-10nm.

[0014] As described above, in the plasma surface etching process detection device, the etching depth detection range of the micro spectrometer is 0.1nm-10μm.

[0015] As described above, in the plasma surface etching process detection device, the micro spectrometer can detect the consistency of the etched surface during the wafer plasma surface etching process.

[0016] In the plasma surface etching process detection device described above, the detection range of the etching surface uniformity of the micro spectrometer is 0.1nm-10μm.

[0017] In the plasma surface etching process detection device described above, the micro spectrometer can be placed on the side around the detection hole.

[0018] The plasma surface etching process detection device described above can be further applied in the semiconductor industry, chip industry, plasma etching industry, or biochip industry.

[0019] As described above, in a plasma surface etching process detection device, the object to be tested is a semiconductor, chip, or wafer. Attached Figure Description

[0020] Figure 1 shows the state of non-uniform etching in the conventional wafer plasma surface etching process.

[0021] Figure 2 shows the distance from the conventional RF drive to the wafer edge.

[0022] Figure 3 is a top view of a first specific embodiment of the plasma surface etching process detection device according to the present invention.

[0023] Figure 4 is a side view of a plasma surface etching process detection device according to an embodiment of the present invention.

[0024] Figure 5 is a top view of the detection hole of the plasma surface etching process detection device according to the invention of this case.

[0025] Figure 6 is a top view of the detector of the plasma surface etching process detection device according to the invention of this case. Detailed Implementation

[0026] To make it easier to understand the technical content, purpose and advantages of the present invention, the embodiments of the present invention will be described in further detail below with reference to the accompanying drawings.

[0027] Figure 3 is a top view of a first specific embodiment of the plasma surface etching process detection device of the present invention. The plasma surface etching process detection device 100 of the present invention includes: a detection stage 10 for detecting the plasma surface etching process state of the test object; a detection hole 11, which is placed at any position on the detection stage 10, and the detection hole 11 has a depth D on the detection stage 10 as shown in Figure 4, wherein the depth of the detection hole 11 is 10 mm, and in the above embodiment the depth range of the detection hole is between 0.1 mm and 100 mm; and a detector 20 placed on at least one side of the detection hole 11, wherein in this embodiment the detector 20 is a miniature spectrometer; When the detection stage 10 detects the surface etching process state of the object under test, and the detection hole 11 is aligned with the detected object under test position, the detector 20 placed in the detection hole 11 is used to detect the reflection spectrum of the object under test. The surface etching process state, such as the plasma surface etching consistency state, is measured by the reflection spectrum. In the above embodiment, the object under test is a wafer, and the surface etching process state of the object under test is the plasma surface etching process state of the wafer. The object under test can be further replaced by a semiconductor, a chip, or other plasma etching measurement object. Continuing with the above embodiment, the detection stage 10 can be further applied in the semiconductor industry, chip industry, plasma etching industry, or biochip industry.

[0028] Continuing with the above embodiments, Figure 4 is a side view of the plasma surface etching process detection device according to an embodiment of the present invention. As shown in Figure 4, the detector 20 and a light input unit 23 are placed on at least one side of the detection hole 11. In this embodiment, the detector 20 is a miniature spectrometer. The detection hole 11 has a depth D on the detection stage 10. In this embodiment, the depth of the detection hole 11 is 10 mm. In the above embodiments, the depth range of the detection hole is between 0.1 mm and 100 mm. The detector 20 is a miniature spectrometer and can be placed within the depth of the detection hole 11 to measure the reflectance spectrum of the object under test. The spectral wavelength detection range of the miniature spectrometer is 200 nm. In the above embodiments, the wavelength detection range of the miniature spectrometer is 200 nm-1200 nm. The micro spectrometer has a spectral resolution detection range of 0.1 nm, which is between 0.1 nm and 10 μm, as described in the previous embodiment. Additionally, the micro spectrometer has an etching depth detection range of 0.1 nm, which is between 0.1 nm and 10 μm. This micro spectrometer can detect the consistency of the reflected spectrum of the etched surface during the wafer plasma surface etching process, further understanding the state of the wafer plasma surface etching and the current etching progress. In this embodiment, the micro spectrometer has an etching surface consistency detection range of 0.1 nm, which is between 0.1 nm and 10 μm, as described in the previous embodiment.

[0029] Continuing with the embodiments of this case, Figure 5 is a top view of the detection hole of the plasma surface etching process detection device of this invention. As shown in Figure 5, the detector 20 can be placed on the side around the detection hole 11. The detector 20 is a miniature spectrometer. As shown in Figure 5, each side of the detector 20 placed around the detection hole 11 has a detector 20 and a light input unit 23, and detects the change in the reflection spectrum wavelength of the wafer plasma surface etching state. In this embodiment, the wavelength detection range of the miniature spectrometer of the detector 20 is between 200nm and 1200nm.

[0030] Following the embodiments of this case, Figure 6 is a top view of the detector of the plasma surface etching process detection device of this invention. As shown in Figure 6, the detector 20 in this embodiment is a miniature spectrometer, which has an input unit 212, an image capturing element (not shown), a grating 213, and a waveguide unit 21. The structure of the miniature spectrometer consists of a waveguide unit 21, an adjustable reflection unit 22, and a light input unit 23. The waveguide unit 21 has a first substrate 211, an input unit 212, a grating 213, a reflector 214, and a second substrate 216. The input unit 212 is formed on the first substrate 211 and is used to receive an optical signal (such as the reflection spectrum of the test object (not shown)) via an optical input unit 23, an input unit 212, and a slit 215. The grating 213 is formed on the first substrate 211 and can generate an output beam after wavelength division of the optical signal. The reflector 214 is formed on the first substrate 211 and is used to reflect the output beam. The second substrate 216 is disposed on the input unit 212, the grating 213, and the reflector 214, and forms a waveguide space 21 between it and the first substrate 211. The adjustable reflection unit 22 is disposed outside the waveguide unit 21 and is used to change the exit angle of the output beam and adjust the focal length of the output beam. The present invention uses the aforementioned miniature spectrometer placed in the detection aperture 11 to detect the reflection spectrum of the test object and further determine the surface etching process state of the test object, such as measuring the consistency of plasma surface etching.

[0031] Although the present invention has been disclosed with reference to the embodiments described above, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and alterations without departing from the spirit and scope of the present invention, and such modifications and alterations shall be within the scope of the rights claimed by this patent. Therefore, the scope of protection of this patent shall be determined by the scope of the appended patent application.

Claims

1. A plasma surface etching process detection device, comprising: A detection platform is used to detect the plasma surface etching process status of the object under test; A detection aperture, which is placed at any position on the detection stage. The detection aperture has a depth on the detection stage; and A detector is placed on at least one side of the detection aperture; When the detection platform detects the surface etching process status of the object under test, and the detection hole is aligned with the position of the object under test, the detector placed in the detection hole is used to detect the surface etching process status of the object under test.

2. The plasma surface etching process detection device according to claim 1, wherein the surface etching process state of the object under test is the plasma surface etching process state of the wafer.

3. The plasma surface etching process detection device according to claim 1 or 2, wherein the detector is a miniature spectrometer.

4. The plasma surface etching process detection device according to claim 3, wherein the depth of the detection hole is 0.1mm-100mm.

5. The plasma surface etching process detection device according to claim 3, wherein the wavelength detection range of the micro spectrometer is 200nm-1200nm.

6. The plasma surface etching process detection device according to claim 3, wherein the spectral resolution detection range of the micro spectrometer is 0.1nm-10nm.

7. The plasma surface etching process detection device according to claim 3, wherein the etching depth detection range of the micro spectrometer is 0.1nm-10μm.

8. The plasma surface etching process detection device according to claim 3, wherein the micro spectrometer can detect the state of the consistency of the etched surface in the wafer plasma surface etching process.

9. The plasma surface etching process detection device according to claim 8, wherein the detection range of the etching surface uniformity of the micro spectrometer is 0.1nm-10μm.

10. The plasma surface etching process detection device according to claim 5, wherein the micro spectrometer can be placed on the side around the detection hole.

11. The plasma surface etching process detection device according to claim 1, wherein the detection platform can be further applied in the semiconductor industry, chip industry, plasma etching industry or biochip industry.

12. The plasma surface etching process detection device according to claim 1, wherein the object to be tested is a semiconductor, chip, or wafer.

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