Contactless nanocrystalline split-gate flash memory sharing word line and manufacturing method thereof

Abstract

The invention provides a word line-sharing contactless nanocrystalline split gate type flash memory and a manufacturing method thereof. In the obtained flash memory device, two storage bit cells share one word line, different operating voltages are applied to the word line, a first control gate, a second control gate, a first bit line and a second bit line to read, program and erase the storage bit cells, and the bit line-sharing structure enables the split gate type flash memory to effectively reduce the area of a chip under the condition of keeping the electric isolation performance of the chip unchanged and simultaneously can avoid the over-erase problems. Meanwhile, the contactless design enables the flash memory device to have the characteristics of small size and process compatibility with the CMOS traditional process, thereby being beneficial to further reducing the size of the word line-sharing contactless nanocrystalline split gate type flash memory.

Description

technical field [0001] The invention relates to the field of semiconductor design and manufacture, and in particular to a non-contact nanocrystal split-gate flash memory sharing a word line and a manufacturing method thereof. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers and U disks. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be lost due to power interruption. Disappe...

AI Technical Summary

Problems solved by technology

When traditional flash memory is moving towards higher storage density, due to structural limitations, it will face great challenges to further reduce the programming voltage of the device

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