Contactless nanocrystalline split-gate flash memory sharing word line and manufacturing method thereof
A technology of split-gate flash memory and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc. Effect
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[0054] In order to better understand the technical content of the present invention, specific embodiments are given together with the attached drawings for description as follows.
[0055] The present invention proposes a non-contact nanocrystalline split-gate flash memory and a manufacturing method thereof for sharing word lines. The obtained flash memory device can effectively reduce the area of the chip while keeping the electrical isolation performance of the chip unchanged, and at the same time The problem of over-erasing can also be avoided.
[0056] Please refer to figure 1 , figure 1 Shown is a schematic diagram of the structure of a non-contact nanocrystalline split-gate flash memory sharing a word line according to a preferred embodiment of the present invention. The present invention proposes a non-contact nanocrystalline split-gate flash memory sharing a word line, comprising: a semiconductor substrate 10 having source regions 11 and drain regions 12 arranged a...
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