Method of Forming Photoresist Layer

A photoresist layer and photoresist technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of photoresist layer void defects, semiconductor device stability degradation, metal layer deformation, etc., to avoid void defects , improve surface matching, and change the effect of surface characteristics

Active Publication Date: 2017-02-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, during the process of forming the photoresist layer on the surface of the silicon oxynitride layer, due to property mismatching between the silicon oxynitride layer and the photoresist layer, the photoresist layer is prone to form void defects (Voiddefeat), such as figure 1 , the photoresist pattern formed by the photoresist layer with void defects is also prone to defects, figure 2 shown
Due to the presence of voids on the photoresist layer and the photoresist pattern, after the metal layer is etched, the metal layer at the position corresponding to the void is prone to deformation, such as image 3 shown, resulting in a decrease in the stability of the semiconductor device

Method used

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  • Method of Forming Photoresist Layer
  • Method of Forming Photoresist Layer
  • Method of Forming Photoresist Layer

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Embodiment Construction

[0016] In the method for forming a photoresist layer of the present invention, before forming a photoresist pattern on the surface of the silicon oxynitride layer, the silicon oxynitride layer is cleaned with an EKC organic solvent, thereby changing the surface characteristics of the silicon oxynitride layer and improving the silicon oxynitride layer. The surface matching between the layer and the photoresist pattern avoids the occurrence of void defects in the photoresist pattern. In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0017] Figure 4 It is a flowchart of the method for forming a photoresist layer of the present invention. The method for forming photoresist layer of the present invention comprises the steps:

[0018] A conductive layer is formed, preferably, the conductive layer may be a composite layer o...

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Abstract

The invention relates to a method for forming a photoresistance layer, which comprises the following steps: forming a conducting layer; forming a silicon oxynitride layer on the surface of the conducting layer; cleaning the surface of the silicon oxynitride layer by utilizing an organic solvent; and forming a photoresistance pattern on the surface of the silicon oxynitride layer. By using the method provided by the invention, the surface matching property of a silicon oxide layer and the photoresistance pattern can be improved, and the generation of a cavity defect of the photoresistance pattern is avoided.

Description

technical field [0001] The invention relates to a method for forming a photoresist layer, in particular to a method for forming a photoresist layer on the surface of a silicon nitride oxide (SION) layer. Background technique [0002] In the existing manufacturing process of semiconductor devices, in the step of etching the metal layer, usually a silicon oxynitride layer is first formed on the surface of the metal layer, and then a photoresist layer is formed on the surface of the silicon oxynitride layer, and then the light The resistance layer is patterned, and the metal layer is etched by using the photoresist pattern. The silicon oxynitride layer is used to protect the metal layer, so as to prevent the area of ​​the metal layer that needs to be kept from being etched away. [0003] However, during the process of forming the photoresist layer on the surface of the silicon oxynitride layer, due to property mismatching between the silicon oxynitride layer and the photoresis...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L21/321
Inventor胡学清
OwnerSHANGHAI HUAHONG GRACE SEMICON MFG CORP