A lateral non-uniform electron irradiation method to improve the safe working area of ​​GCT chips

Abstract

Provided is a crosswise heterogeneous electron irradiation method of improving a global completion table (GCT) chip safe working area. The crosswise heterogeneous electron irradiation method of improving the GCT chip safe working area comprises the following steps: (1) carrying out pre-radiation of a GCT chip, and carrying out a primary pre-irradiation to the GCT chip through methods of controlling minority carrier lifetime and pressure drop of the GCT chip, (2) carrying out monitoring of the minority carrier lifetime and pressure drop of the GCT chip after a primary annealing, (3) adopting composite alloy baffles, carrying out a second irradiation and a second annealing to the GCT chip by using heterogeneity of electron irradiation penetrating through the composite alloy baffles, and (4) carrying out the monitoring of the minority carrier lifetime and pressure drop of the GCT chip again. The crosswise heterogeneous electron irradiation method of improving the GCT chip safe working area has the advantages of being simple in principle, and simple and convenient to operate, achieving control of the minority carrier lifetime of parts of the GCT chip, reducing redistribution effect of an electric current in the process of cutoff of GCT by reducing the minority carrier lifetime of far from gate pole slivers, and improving a whole safe working area of the GCT chip and the like.

Description

technical field [0001] The present invention mainly relates to the field of high-power semiconductor devices, in particular to a laterally non-uniform electron irradiation method for improving the safe working area of ​​a GCT chip, and mainly applies to a GCT chip with an independent gate structure and a surrounding discrete comb structure, and at the same time Also suitable for electron irradiation applications of GTO and ETO chips with similar structures. Background technique [0002] High-energy particle irradiation technology is the parameter control technology of high-power semiconductor devices commonly used in the world at present. Its basic principle is to irradiate the semiconductor with a high-energy particle beam with sufficient energy, and the high-energy particle will elastically collide with the lattice atoms in the semiconductor. The lattice atoms are displaced to generate interstitial atom-hole pairs. Corresponding to the generation of these defects, correspo...

AI Technical Summary

Problems solved by technology

Some practitioners have proposed a scheme to improve the safe working area of ​​IGCT, in which lateral current redistribution and local minority carrier lifetime control technology are two important control technologies, but in fact, due to the differences in actual processes and the non-uniformity between chips The existence of nature makes it a bottleneck to improve the safe working area of ​​actual IGCT devices in batches

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