Method and device for write operation and erasure operation of Flash memory

A write operation and flash memory technology, which is applied in the computer field, can solve the problems of less erasable times and short service life of Flash flash memory, and achieve the effects of reducing the number of times of erasing, increasing the service life and preventing data loss

Active Publication Date: 2016-04-20
SHANGHAI EASTSOFT MICROELECTRONICS
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, when Flash memory is used as a data storage for data storage, since the stored data will often change, it is necessary to frequently perform operations such as data writing and erasing, but Flash memory has fewer erasable times and a shorter service life

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  • Method and device for write operation and erasure operation of Flash memory
  • Method and device for write operation and erasure operation of Flash memory
  • Method and device for write operation and erasure operation of Flash memory

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Embodiment Construction

[0042] In existing electronic products, according to the different characteristics of EEPROM and Flash flash memory, EEPROM is generally used as data storage and Flash flash memory is used as program storage. Compared with EEPROM, the price of Flash is relatively low, and Flash can get a larger capacity under the same wafer area. In order to reduce production costs, some small household appliances with relatively low performance requirements widely use Flash as data storage. . However, when the Flash flash memory is used as a data storage for data storage, since the data changes frequently, operations such as data writing and page erasing are frequently required, and frequent page erasing operations will reduce the service life of the Flash flash memory.

[0043] In the embodiment of the present invention, the pages in the Flash flash memory are pre-divided into a matrix structure of row addresses and column addresses, and multiple column addresses of a row in the Flash flash mem...

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Abstract

The invention provides a method and device for a write operation and an erasure operation of a Flash memory. The method for the write operation of the Flash memory comprises the steps that a write operation instruction for the Flash memory is received; a virtual address contained in the write operation instruction is acquired; an actual address in the Flash memory, which is corresponding to the virtual address, is acquired according to a mapping relation between preset virtual addresses and actual addresses; a page in the Flash memory has a matrix structure composed of rows and lines; the actual address corresponding to one virtual address comprises multiple line addresses of the same row in the matrix structure; and to-be-written data is written into a blank address in the actual address, which is corresponding to the virtual address. The method and device for the write operation and the erasure operation have the advantages that erasure times of the Flash memory can be effectively reduced; and service life of the Flash memory can be prolonged.

Description

Technical field [0001] The present invention relates to the field of computer technology, in particular to a method and device for writing and erasing Flash flash memory. Background technique [0002] With the continuous development of electronic technology, existing home appliances are becoming more and more intelligent. Smart home appliances can realize more and more functions, and the larger the amount of program code that needs to be stored. The current storage method is mostly a flash memory (Flash Memory) with an electrically erasable programmable read-only memory (Electrically Erasable Programmable Read-Only Memory, EEPROM) method. [0003] The biggest difference between Flash and EEPROM is: Flash flash is erased by sector, while EEPROM is erased by byte. Since Flash flash memory is erased in blocks by sectors, it is suitable for storing some programs with small changes, so it is suitable for program storage. The EEPROM has a small capacity and can be erased by byte, so E...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02
Inventor 史卫东李军李星潘松
Owner SHANGHAI EASTSOFT MICROELECTRONICS
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