Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A system startup method and system based on nand memory

A storage and post-start technology, applied in the direction of program loading/starting, program control device, etc., to achieve the effect of improving compatibility

Active Publication Date: 2019-08-27
SHANGHAI INFOTM MICROELECTRONICS
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a system startup method and system based on NAND memory, which can adapt to the Read Retry requirements of different NAND memories, so that the chip startup code is better compatible with different NAND memories, thereby solving the problem in some usage scenarios. The case where the NAND memory cannot be started normally because there is no corresponding Read Retry

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A system startup method and system based on nand memory
  • A system startup method and system based on nand memory
  • A system startup method and system based on nand memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the specific implementation manners of the present invention will be described below with reference to the accompanying drawings. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention, and those skilled in the art can obtain other accompanying drawings based on these drawings and obtain other implementations.

[0044] In order to make the drawing concise, each drawing only schematically shows the parts related to the present invention, and they do not represent the actual structure of the product. In addition, to make the drawings concise and easy to understand, in some drawings, only one of the components having the same structure or function is schematically shown, or only one of them is marked. Herein, "a" not only means "only one", but also means "more than one".

[0045] In one emb...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a system startup method and system based on a NAND storage, and relates to the field of the NAND storage. The system comprises the NAND storage, a central processing unit and a system memory, wherein the NAND storage is electrically connected with the central processing unit; the system memory is electrically connected with the central processing unit; the NAND storage comprises a page; the central processing unit comprises a data reading module, a data judgment module, a calculation checkout module, a setting module and a startup module. According to the ID (Identity) of the NAND storage, the corresponding Retry command sequence parameter is backed up to each page in the NAND storage, the compatibility of an inherent chip startup code with the NAND storage is greatly improved, and therefore, a situation that system startup from the NAND storage fails since no proper Retry command sequence parameters exist under certain use scenes can be eliminated.

Description

technical field [0001] The invention relates to the field of NAND memory, in particular to a method and system for starting a system based on NAND memory. Background technique [0002] NAND memory (NAND FLASH) is a relatively commonly used storage medium, which is suitable for storing large amounts of data. It is more marketable in devices that frequently upload or update large files, such as: MP3 players, digital cameras and USB drives all use NAND memory . The development direction of NAND memory technology is smaller chips, longer read and write cycles, and lower voltage requirements. These improvements will make NAND memory technology more widely used. [0003] Based on the hardware characteristics of NAND memory: data is relatively easy to make mistakes when reading and writing, so in order to ensure the correctness of data, there must be a corresponding detection and error correction mechanism. This mechanism is called ECC (Error Correcting Code, error checking and co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F9/445
Inventor 皮小军魏巍王大岁
Owner SHANGHAI INFOTM MICROELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products