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Electronic device, three-dimensional memory and manufacturing method thereof

A manufacturing method and memory technology, which is applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problems of influence, substrate surface concentration reduction, etc.

Active Publication Date: 2021-02-12
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the etching process removes a part of the substrate surface, the concentration of the substrate surface is reduced, which affects the peripheral contact (periphery contact, PC) and the P / N well (P / N Well) fabricated on the substrate. ) Contact resistance between structures

Method used

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  • Electronic device, three-dimensional memory and manufacturing method thereof
  • Electronic device, three-dimensional memory and manufacturing method thereof
  • Electronic device, three-dimensional memory and manufacturing method thereof

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Embodiment Construction

[0046] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the implementation manners in the present invention, all other implementation manners obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of the present invention.

[0047] Please refer to figure 1, when making a three-dimensional memory, in the current manufacturing process, when making a stepped structure of a memory array, a bottom insulating layer, a bottom select gate layer (Bottom Select Gate, BSG), a BSG insulating layer, and a stacked layer are first sequentially formed on the substrate 10 . The stacked layers may include first dielectric layers (eg, silicon oxide) 11 and secon...

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Abstract

The invention provides an electronic device, a three-dimensional memory and a manufacturing method thereof. The three-dimensional memory includes a substrate, an etching barrier layer, and a multi-layer stacked pair. The three-dimensional memory has a storage area and a peripheral area, and all of the storage area The multi-layer stack pair is provided on the substrate, the substrate in the peripheral area is used to connect with peripheral contacts, the etching barrier layer is provided on the substrate in the peripheral area, and the The etch stop layer is used to block the substrate from being etched. By setting the etching barrier layer, the etching liquid or gas is blocked by the etching barrier layer when etching the multilayer stacked pair, and will not be etched onto the substrate in the peripheral region, thereby not reducing the concentration of hydrogen ions on the substrate surface , will not affect the contact resistance between the peripheral contact and the P / N well structure of the substrate.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an electronic device, a three-dimensional memory and a manufacturing method thereof. Background technique [0002] With the development of semiconductor technology, such as NAND memory in non-volatile memory, the storage capacity needs to be increased to meet the large storage requirements. The appearance size of NAND memory is usually 2.5 inches. In the case that the physical size cannot be increased, to increase the storage capacity, the industry proposes to increase the storage density per unit area. One way to increase storage density is through the use of vertical memory arrays, 3D NAND (three-dimensional NAND) memory. With the increasing integration, the three-dimensional memory has developed from 32 layers to 64 layers, or even higher layers. [0003] Taking the 64-layer as an example, the stepped structure of the 64-layer three-dimensional memory is o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11551H01L27/11578
Inventor 夏季孙坚华肖莉红邵明魏勤香
Owner YANGTZE MEMORY TECH CO LTD
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