A method for cleaning a silicon substrate

Abstract

The invention provides a method for cleaning a silicon substrate, comprising the following steps: obtaining a silicon substrate with residual carbon nanotubes and other impurities, performing high-temperature burning treatment on the silicon substrate; The substrate is physically cleaned; the silicon substrate after the physical cleaning is blown dry, and then a reusable silicon substrate is obtained. After cleaning, the surface color of the silicon wafer is uniform, without spots and gray marks; the second carbon nanotube growth test shows that the output of carbon nanotubes reaches 91%-94% of the new silicon wafer, which basically meets the target requirements.

Description

technical field

[0001] The invention belongs to a silicon chip cleaning process, in particular to a method for cleaning a silicon substrate. Background technique

[0002] In recent years, with the in-depth research on carbon nanotubes and nanomaterials, the demand for carbon nanotubes is increasing, and its broad application prospects are constantly showing. Carbon nanotubes, also known as bucky tubes, are one-dimensional quantum materials with a special structure (the radial dimension is on the order of nanometers, the axial dimension is on the order of microns, and both ends of the tube are basically sealed). Carbon nanotubes are mainly coaxial tubes with several to tens of layers of carbon atoms arranged in a hexagonal shape. A fixed distance is maintained between layers, about 0.34nm, and the diameter is generally 2 to 20nm. And according to the different orientations of the carbon hexagon along the axial direction, it can be divided into three types: zigzag, armchair ...

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