Reaction chamber and wafer alignment method

Abstract

The present application discloses a reaction chamber and a wafer alignment method, wherein the reaction chamber comprises a bearing mechanism, a driving mechanism, an optical path detection component, a cavity and a control component, wherein the bearing mechanism has a bearing surface for bearing a wafer, and the bearing mechanism is movably mounted on the cavity through the driving mechanism; the optical path detection component comprises an optical transmitter and an optical receiver, and the optical receiver is used to detect the light emitted by the optical transmitter, and the control component is used to control the bearing mechanism to rotate around the axis of the cavity to a preset time length, and obtain the deviation parameter between the wafer carried on the bearing mechanism and the bearing mechanism; the control component is also used to control the driving mechanism to drive the bearing mechanism to move in a horizontal direction perpendicular to the axis direction based on the deviation parameter when the deviation parameter is not zero, so that the center of the wafer is located on the axis of the cavity. The above-mentioned reaction chamber can keep the wafer in a relatively centered state as much as possible.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing technology, and in particular to a reaction chamber and a wafer alignment method. Background Art

[0002] In the process of semiconductor device processing, the uniformity within the wafer is an important indicator for evaluating the process results. Since the chamber structure of the semiconductor processing equipment and the wafer itself are highly symmetrical, how to overlap the symmetry axes of these two highly symmetrical objects is the premise for ensuring uniformity. Therefore, the alignment problem between the wafer and the chamber structure becomes very important.

[0003] Taking edge etching as an example, in the process of wafer processing, since the density of plasma in the area corresponding to the edge of the wafer in the process chamber is relatively low, polymers are easily accumulated on the edge of the wafer, so that the edge of the wafer needs to be processed in the subsequent process. In edge etching, a cover plate is usually used to cover the central area of ​​the wafer to provide a shielding effect for the central area of ​​the wafer, and the outer edge of the wafer is located outside the shielding plate, so that the outer edge of the wafer is in an exposed state, so as to perform an etching process on the edge of the wafer and remove the residue on the surface of the wafer. The cover plate is usually arranged in the process chamber, and it has the ability to move up and down along the axis of the process chamber, and the position of the cover plate and the bearing mechanism corresponds to each other. When the center of the wafer is basically aligned with the center of the bearing mechanism, the shield plate dropped from the top of the bearing mechanism can be more accurately shielded above the central area of ​​the wafer, so that the edge of the wafer is in an exposed state.

[0004] During the wafer edge etching process, it is necessary to use a robot or other mechanism to transfer the wafer from outside the process chamber to a chuck or other carrying mechanism inside the process chamber so that the wafer is carried on the chuck. However, due to the motion error of the robot and other reasons, when the robot is used to transfer the wafer to the carrying mechanism of the process chamber, it is easy for the wafer to be offset on the carrying mechanism. When the cover plate is used to cover the wafer, it is easy for the size of the exposed part of one side edge of the wafer to differ greatly from the size of the exposed part of the other side edge, which is not conducive to the wafer edge etching process.

[0005] Of course, in other processes of the wafer except the above-mentioned wafer edge etching, there is usually a process in which the wafer needs to be transferred into the process chamber and carried on a carrying mechanism. If the wafer is carried on the carrying mechanism with an offset, it will also have an adverse effect on the process being carried out. Therefore, there is an urgent need for a device and / or method that can adjust the position of the wafer. Summary of the invention

[0006] The present application discloses a reaction chamber and a wafer alignment method, so as to keep the wafer in a relatively centered state as much as possible.

[0007] In order to solve the above problems, this application adopts the following technical solutions:

[0008] In a first aspect, an embodiment of the present application discloses a reaction chamber, the reaction chamber comprising a carrying mechanism, a driving mechanism, an optical path detection component, a cavity and a control component, the carrying mechanism having a carrying surface for carrying a wafer, the carrying mechanism being movably mounted on the cavity through the driving mechanism;

[0009] The optical path detection component includes a light emitter and a light receiver, one of which is installed at the top of the cavity, and the other is installed at the bottom of the cavity, and the light emitter and the light receiver are arranged relatively along the axis direction of the cavity, and the light receiver is used to detect the light emitted by the light emitter, and the control component is used to control the bearing mechanism to rotate around the axis of the cavity to a preset time length, and obtain the deviation parameter between the wafer carried by the bearing mechanism and the bearing mechanism;

[0010] The control component is also used to control the driving mechanism to drive the supporting mechanism to move in a horizontal direction perpendicular to the axial direction based on the deviation parameter when the deviation parameter is not zero, so that the center of the wafer is located on the axis of the cavity.

[0011] In a second aspect, an embodiment of the present application discloses a wafer alignment method, which is applied to the above-mentioned reaction chamber, and the wafer alignment method includes:

[0012] S1, transferring the wafer to the carrying mechanism in the cavity;

[0013] S2, controlling the carrying mechanism to rotate around the axis of the cavity for a preset time, and obtaining a deviation parameter of the wafer carried by the carrying mechanism relative to the carrying mechanism;

[0014] S3. When the deviation parameter is not zero, based on the deviation parameter, control the driving mechanism to drive the supporting mechanism to move in a horizontal direction perpendicular to the axis direction, so that the center of the wafer is located on the axis of the cavity.

[0015] The technical solution adopted in this application can achieve the following beneficial effects:

[0016] The embodiment of the present application discloses a reaction chamber, which includes a bearing mechanism, a driving mechanism, an optical path detection component, a cavity and a control component, wherein a wafer can be carried on the bearing mechanism, and the driving mechanism can drive the bearing mechanism to move in a horizontal direction perpendicular to the axial direction of the cavity. The optical path detection component includes a light emitter and a light receiver, one of which is arranged above the cavity, and the other is arranged below the cavity, and the two are arranged relative to each other along the axial direction of the cavity, so that the light receiver can detect the light emitted by the light emitter without being blocked by other objects. During the process of the wafer, the control component can control the bearing mechanism to drive the wafer to rotate for a preset time along the direction of the axial direction around the cavity, and control the optical path detection component to detect the alignment state between the wafer and the bearing mechanism, obtain the deviation parameter between the wafer carried on the bearing mechanism and the bearing mechanism, and when the deviation parameter is not zero, based on the deviation parameter, control the driving mechanism to drive the bearing mechanism to move in a horizontal direction perpendicular to the axial direction, so that the center of the wafer is located on the axis of the cavity, ensuring that the wafer is kept relatively centered as much as possible, and improving the process effect of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0018] Figure 1 is a schematic diagram of the structure of the reaction chamber disclosed in the embodiment of the present application;

[0019] Figures 2 to 4 It is a schematic diagram of the structure of different implementation methods of the optical path detection assembly disclosed in the embodiments of the present application;

[0020] Figure 5 is a schematic diagram of the structure of the optical path detection assembly disclosed in an embodiment of the present application in another direction;

[0021] Figure 6 and Figure 7 It is a schematic diagram of the detection principle of the optical path detection component disclosed in the embodiment of the present application;

[0022] Figure 8 It is a structural schematic diagram of another implementation of the optical path detection component disclosed in the embodiment of the present application;

[0023] Figures 9 to 16 It is a schematic diagram of the detection principle of the optical path detection component disclosed in the embodiment of the present application;

[0024] Fig.17 It is a schematic diagram of the calculation principle of the optical path detection component for the offset of the wafer disclosed in the embodiment of the present application;

[0025] Figures 18 to 21 It is a schematic diagram of the detection principle of the optical path detection component disclosed in the embodiment of the present application;

[0026] Fig. 22 It is a flow chart of the reaction chamber disclosed in the embodiment of the present application for aligning wafers;

[0027] Fig.23 It is a flow chart of the wafer alignment method disclosed in the embodiment of the present application.

[0028] Description of reference numerals:

[0029] 10-Wafer,

[0030] 100-carrying mechanism, 110-lower electrode, 120-electrostatic chuck,

[0031] 200-driving mechanism,

[0032] 310-optical transmitter, 320-optical receiver,

[0033] 800-Observation window,

[0034] 900-Process chamber. DETAILED DESCRIPTION

[0035] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0036] The technical solutions disclosed in various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.

[0037] During the process of the wafer 10, a wafer transfer mechanism such as a manipulator is usually used to transfer the wafer 10 from outside the cavity 900 to inside the cavity 900, so as to use the cavity 900 to provide a process environment for the process of the wafer 10. In addition, a carrying mechanism 100 such as an electrostatic chuck or a Bernoulli chuck is usually provided in the cavity 900 to provide a carrying function for the wafer 10. In addition, the carrying mechanism 100 usually also has a rotation function, and then during the process of the wafer 10, the consistency of the process conditions at various positions on the wafer 10 can be relatively better by driving the wafer 10 to rotate. Among them, the position of the carrying mechanism 100 in the cavity 900 can usually be fixed, and the axis of the carrying mechanism 100 coincides with the axis of the cavity 900, so that the center of the wafer 10 accurately carried on the carrying mechanism 100 can also coincide with the axis of the cavity 900, ensuring that the process effect of the wafer 10 is better.

[0038] However, due to factors such as errors in the wafer conveying mechanism such as the robot, the wafer 10 on the carrier mechanism 100 that is transferred into the chamber 900 by the wafer conveying mechanism may not be aligned with the carrier mechanism 100. In short, the wafer 10 is not placed on the carrier mechanism 100 in the center; in other words, the center of the carrying surface of the carrier mechanism 100 does not coincide with the center of the wafer 10, or the line connecting the centers of the two is not parallel to the axis of the chamber 900.

[0039] Based on this, Figure 1-Figure 21 As shown, an embodiment of the present application discloses a reaction chamber, which includes a carrying mechanism 100, a driving mechanism 200, an optical path detection component, a cavity 900 and a control component.

[0040] Among them, the carrying mechanism 100 has a carrying surface for carrying the wafer 10, which may specifically include an electrostatic chuck 120, or the carrying mechanism 100 may also include a Bernoulli chuck, etc., which is not limited here. At the same time, the carrying mechanism 100 also has the ability to drive the wafer 10 to rotate. Specifically, the carrying mechanism 100 may include a lower electrode 110 and an electrostatic chuck 120, and the electrostatic chuck 120 has a rotation function, and the electrostatic chuck 120 is installed on the lower electrode 110 to provide a bearing and drive rotation function for the wafer 10 through the electrostatic chuck 120.

[0041] In addition, the supporting mechanism 100 is movably installed in the cavity 900 through the driving mechanism 200, that is, the driving mechanism 200 can drive the supporting mechanism 100 to move relative to the cavity 900; correspondingly, during the process of the supporting mechanism 100 being driven, the wafer 10 carried on the supporting mechanism 100 can also be driven to move relative to the cavity 900.

[0042] The driving mechanism 200 may specifically include a driving motor, which is mounted on the cavity 900, and the supporting mechanism 100 is connected to the driving motor, so that when the driving motor is working, the supporting mechanism 100 can move relative to the cavity 900. In addition, in the present application, the driving mechanism 200 can drive the supporting mechanism 100 to move in a horizontal direction perpendicular to the axial direction of the cavity 900, and further, the driving mechanism 200 may include at least two driving motors, and the driving directions of the two driving motors are arranged non-parallel, and then at least two driving motors are used to provide driving action for the supporting mechanism 100 at the same time, so as to ensure that the supporting mechanism 100 can move in a horizontal direction in a horizontal plane perpendicular to the axial direction of the cavity 900.

[0043] The optical path detection component includes a light emitter 310 and a light receiver 320, one of which is installed at the top of the cavity 900, and the other is installed at the bottom of the cavity 900. The light emitter 310 and the light receiver 320 are arranged opposite to each other along the axial direction of the cavity 900, and the light receiver 320 is used to detect the light emitted by the light emitter 310.

[0044] Specifically, both the light emitter 310 and the light receiver 320 can be installed in the cavity 900, and the light emitter 310 and the light receiver 320 can correspond to each other, ensuring that the light emitted by the light emitter 310 can be normally detected by the light receiver 320 without being blocked by other objects, so that the two can be used in conjunction. More specifically, the light emitter 310 can be a laser emitter or an infrared light emitter, etc., and correspondingly, the light receiver 320 is a laser receiver or an infrared light receiver. Of course, the light emitter 310 can also emit ultraviolet light or visible light, etc., but in order to ensure that the light receiver 320 can detect the ultraviolet light or visible light emitted by the light emitter 310, it is necessary to ensure that the intensity of the light emitted by the light emitter 310 is greater than the brightness in the cavity 900.

[0045] Based on the reaction chamber disclosed in the embodiment of the present application, when the wafer 10 needs to be processed, the wafer 10 can be first transferred to the supporting mechanism 100 in the cavity 900 using a film transport mechanism such as a robot, and then the position between the wafer 10 and the supporting mechanism 100 can be detected using an optical path detection component to determine the alignment state between the wafer 10 and the supporting mechanism 100.

[0046] In order to prevent the offset wafer 10 from being located just outside the range that the optical path detection component can detect, resulting in the optical path detection component being unable to detect the wafer 10 and being unable to provide (accurate) detection results. In the present application, the control component can control the carrier mechanism 100 to rotate around the axis of the cavity 900 for a preset time length to obtain the deviation parameter between the wafer 10 carried on the carrier mechanism 100 and the carrier mechanism 100. In this case, even if the wafer 10 offset on the carrier mechanism 100 cannot be detected by the optical path detection component at the first time, it can be basically guaranteed that the wafer 10 offset on the carrier mechanism 100 can be detected by the optical path detection component after the wafer 10 rotates with the carrier mechanism 100 for a preset time length.

[0047] Of course, even after the wafer 10 rotates with the carrier mechanism 100 for a preset time, the deviation parameter may be zero. In this case, the wafer 10 and the carrier mechanism 100 may be in an aligned state.

[0048] Correspondingly, the control component can also control the driving mechanism 200 to drive the supporting mechanism 100 to move in a horizontal direction perpendicular to the axial direction of the cavity 900 based on the deviation parameter when the deviation parameter is not zero, so that the center of the wafer 10 is located on the axis of the cavity 900.

[0049] Specifically, if Figure 2 As shown, the number of optical path detection components can be one. In this case, the diameter of the wafer 10 and the diameter of the supporting mechanism 100 may not be equal. At that time, in order to ensure that the supporting effect of the wafer 10 is relatively good, the diameter of the wafer 10 and the diameter of the supporting mechanism 100 can be made equal. Unless otherwise specified below, this case is taken as an example to introduce the technical contents disclosed in the embodiments of the present application. At the same time, in this case, the adjustment difficulty of the wafer 10 is also relatively low.

[0050] Based on the above, the position of the optical path detection component can be predetermined based on the diameter of the bearing surface of the carrier mechanism 100. When the number of optical path detection components is one, the optical path detection component can be set outside the bearing surface of the carrier mechanism 100, so that the light emitted by the light emitter 310 of the optical path detection component will not be blocked by the bearing surface of the carrier mechanism 100, that is, in the absence of other structures such as the wafer 10 to block the light, the light receiver 320 of the optical path detection component can detect the light. Of course, in the process of installing the optical path detection component, the distance between the optical path detection component and the bearing surface of the carrier mechanism 100 in the horizontal direction perpendicular to the axial direction of the cavity 900 can be made as small as possible to maximize the detection accuracy of the optical path detection component.

[0051] Based on the above technical solution, when the wafer 10 and the supporting mechanism 100 are in an aligned state, the light emitted by the light emitter 310 in the optical path detection component can be detected by the light receiver 320. Correspondingly, when the wafer 10 and the supporting mechanism 100 are in a misaligned state, the offset wafer 10 will extend beyond the carrying surface of the supporting mechanism 100, causing the wafer 10 to block the light emitted by the light emitter 310, resulting in the light receiver 320 being unable to detect the light.

[0052] In this case, by obtaining the time when the light receiver 320 cannot detect the light, based on the parameters such as the rotation speed and diameter of the carrier mechanism 100, the basic data such as the angle and arc length of the arc path of the light moving on the wafer 10 can be determined. In addition, the offset of the above-mentioned wafer 10 can be tested in advance by manual measurement and the like, and a corresponding data group is formed with the aforementioned time, arc length and angle. Furthermore, in the subsequent process, the offset of the wafer 10 can be determined accordingly according to the corresponding data obtained by measurement. With the support of a large amount of data, in the subsequent process, the detection results of the database and the optical path detection component can be used to determine whether there is a misalignment between the wafer 10 and the carrier mechanism 100, and the size and direction of the offset of the wafer 10 in the misaligned state, so that the control component can control the drive mechanism 200 to drive the carrier mechanism 100 to produce a corresponding position adjustment based on the specific situation of the aforementioned offset.

[0053] In the above process, the set conditions include the case where the diameter of the wafer 10 is equal to the diameter of the supporting mechanism 100. Correspondingly, when the diameter of the wafer 10 is larger than the diameter of the supporting mechanism 100, by locating the optical path detection component outside the wafer 10 in the aligned state, when the wafer 10 is skewed and a part of the wafer 10 is located outside the supporting mechanism 100, an optical path detection component can be used to measure the offset of the wafer 10.

[0054] The embodiment of the present application discloses a reaction chamber, which includes a carrying mechanism 100, a driving mechanism 200, an optical path detection component, a cavity and a control component. The wafer 10 can be carried on the carrying mechanism 100, and the driving mechanism 200 can drive the carrying mechanism 100 to move in a horizontal direction perpendicular to the axial direction of the cavity 900. The optical path detection component includes a light emitter 310 and a light receiver 320, one of which is arranged above the cavity 900, and the other is arranged below the cavity 900, and the two are arranged relative to each other along the axial direction of the cavity 900, so that the light receiver 320 can detect the light emitted by the light emitter 310 without being blocked by other objects. During the processing of the wafer 10, the control component can control the supporting mechanism 100 to drive the wafer 10 to rotate for a preset time along the axial direction around the cavity 900, and control the optical path detection component to detect the alignment state between the wafer 10 and the supporting mechanism 100, and obtain the deviation parameter between the wafer 10 supported by the supporting mechanism 100 and the supporting mechanism 100, and when the deviation parameter is not zero, based on the deviation parameter, control the driving mechanism 200 to drive the supporting mechanism 100 to move in a horizontal direction perpendicular to the axial direction, so that the center of the wafer 10 is located on the axis of the cavity 900, to ensure that the wafer 10 is kept in a relatively centered state as much as possible, thereby improving the processing effect of the wafer 10.

[0055] As described above, the present application provides a process for detecting the alignment state between the wafer 10 and the carrier mechanism 100 when the number of optical path detection components is one group. In order to improve the detection efficiency and detection accuracy of the reaction chamber disclosed in the embodiment of the present application, optionally, as Figure 3 and Figure 4 As shown, the number of optical path detection components disclosed in this embodiment can also be multiple groups, and the multiple groups of optical path detection components can be distributed along the circumference of the supporting mechanism 100, that is, the multiple groups of optical path detection components are symmetrically distributed around the axis center of the cavity 900. Specifically, the number of optical path detection components can be two groups, three groups or more groups, which is not limited here.

[0056] Meanwhile, in this embodiment, the light emitted by the light emitter 310 in any optical path detection assembly is located outside the carrying surface, that is, in the absence of other devices such as the wafer 10 blocking it, the light emitted by any light emitter 310 can be detected by the corresponding light receiver 320. Accordingly, when the light emitted by any light emitter 310 is blocked, it can be considered that there is a misalignment between the wafer 10 carried on the carrying mechanism 100 and the carrying mechanism 100.

[0057] Specifically, still taking the case where the diameters of the wafer 10 and the carrier mechanism 100 are equal as an example, the positions of the multiple optical path detection components can be set so that each optical path detection component is located outside the carrier surface, that is, in the absence of any other structural member blocking, the light emitted by the light emitter 310 of any optical path detection component can be detected by the corresponding light receiver 320. Accordingly, when any light receiver 320 cannot detect the light normally, it can be considered that the wafer 10 carried on the carrier mechanism 100 is in a non-aligned state with the carrier mechanism 100.

[0058] In addition, when the wafer 10 is larger than the diameter of the supporting mechanism 100, the optical path detection component can be set corresponding to the diameter of the wafer 10 to ensure that when the wafer 10 is offset relative to the supporting mechanism 100, the above-mentioned situation can be detected by rotating the supporting mechanism for a preset time and using the detection result that one or more optical receivers 320 cannot detect light normally.

[0059] Accordingly, in a technical solution in which multiple optical path detection components are arranged outside the carrying surface (or the wafer in an aligned state), the control component can determine whether it is necessary to adjust the position of the carrying mechanism through the driving mechanism based on the light detection state of each optical path detection component. Accordingly, when the position of the carrying mechanism needs to be adjusted, the adjusted size of the carrying mechanism is related to the rotation speed of the carrying mechanism, the radius of the wafer and the preset time.

[0060] As described above, during the process of the control component controlling the carrier mechanism 100 to rotate for a preset time, if one or more light receivers 320 cannot normally detect the light emitted by the corresponding light emitter 310, it is considered that the wafer 10 carried on the carrier mechanism 100 is in a non-aligned state with the carrier mechanism 100, and at this time, the position of the carrier mechanism 100 needs to be adjusted. During the process of adjusting the carrier mechanism 100 by the driving mechanism 200, the adjusted size of the carrier mechanism 100 is related to the rotation speed of the carrier mechanism 100, the radius of the wafer 10, and the preset time for the carrier mechanism 100 to rotate.

[0061] In order to reduce the number of devices in the reaction chamber as much as possible to reduce the equipment cost and correspondingly reduce the difficulty of assembling the reaction chamber, optionally, as Figure 3 As shown, there are two optical path detection components, and the two optical path detection components are arranged along the circumference of the supporting mechanism 100. At the same time, in order to maximize the detection range of the two optical path detection components for the offset of the wafer 10 and improve the detection efficiency of the optical path detection components, the angle spanned by the two groups of optical path detection components in the axial direction of the supporting mechanism 100 can be greater than or equal to 90° and less than 270° (that is, the angle is greater than or equal to 90° when viewed from another direction). In this case, during the rotation of the wafer 10 with the supporting mechanism 100, the two groups of optical path detection components can more quickly detect the offset of the wafer 10, and then adjust the position of the wafer 10 in the cavity 900 through the driving action provided by the driving mechanism 200 at the first time, so that the wafer 10 can be adjusted to a relatively centered position more quickly.

[0062] More specifically, if Figure 6 As shown, the angle formed by the lines connecting the two optical path detection components and the center of the supporting mechanism 100 can be made 90°. In this case, on the one hand, it is convenient for the optical path detection component to more quickly determine whether there is a bias in the wafer 10 and the specific bias parameters of the wafer 10. On the other hand, it can also reduce the difficulty of obtaining the bias parameters of the wafer 10 and improve the detection accuracy.

[0063] In order to further improve the detection capability, detection accuracy and detection speed of the optical path detection component, in another embodiment of the present application, Figure 4 and Figure 7 As shown, there are three groups of optical path detection components, and the three groups of optical path detection components are arranged along the circumference of the carrying mechanism 100. In order to improve the utilization efficiency of the three groups of optical path detection components, the three groups of optical path detection components can be distributed more dispersedly on the periphery of the carrying mechanism 100, so that no matter in which direction the wafer 10 is deflected relative to the carrying mechanism 100, the optical path detection components in the corresponding direction can be used to more quickly obtain the offset of the wafer 10.

[0064] Optionally, when the number of optical path detection components is three groups, the triangle formed by the three groups of optical path detection components can be an acute triangle. In this case, when the wafer 10 is deflected in a certain direction relative to the carrier mechanism 100, it can be ensured that the three groups of optical path detection components can respond relatively quickly to the information that the wafer 10 has a bias condition. At the same time, when the three groups of optical path detection components are arranged in the arrangement method disclosed in this embodiment, the accuracy of the results of the detection of the bias condition of the wafer 10 can also be improved, thereby improving the driving accuracy of the driving mechanism 200, so that the position of the wafer 10 after dynamic movement in the horizontal direction relative to the cavity 900 during the rotation of the carrier mechanism 100 is closer to the center position of the cavity 900, thereby improving the process effect of the wafer 10. More specifically, when the number of optical path detection components is three groups, the three groups of optical path detection components can be arranged evenly and spaced along the circumference around the carrier mechanism 100 to maximize the detection accuracy and efficiency of the bias condition of the wafer 10.

[0065] In the case where there are multiple optical path detection components, in the above embodiment, multiple optical path detection components are dispersedly arranged in a dotted manner along the circumference of the supporting mechanism 100. In another embodiment of the present application, Figure 8 As shown, multiple optical path detection components are distributed along a straight line direction, and the number of optical path detection components is at least three. Two of the at least three optical path detection components are respectively a first detection component and a second detection component, and light emitted by at least one optical path detection component located between the first detection component and the second detection component is blocked by the bearing surface, and the two optical path detection components closest to the optical path detection component whose light is blocked by the bearing surface among the multiple optical path detection components whose light is not blocked by the bearing surface are respectively the first detection component and the second detection component.

[0066] In detail, at least three optical path detection components are distributed along a straight line, and by making one or more of the multiple optical path detection components (the optical transmitter 310 or the optical receiver 320) be located above the carrying surface, the optical receiver 320 of the aforementioned one or more of the components cannot normally detect the light emitted by the optical transmitter 310, and the aforementioned one or more of the components are optical path detection components whose light is blocked by the carrying surface; at the same time, based on factors such as the diameter of the carrying surface and the relative positions between the multiple optical path detection components and the carrying surface, the span of the multiple optical path detection components is adaptively increased, so that at least two optical path detection components are located outside the carrying surface, and then the light emitted by the respective optical transmitters 310 of the aforementioned at least two optical path detection components can be detected by the corresponding optical receiver 320, and the aforementioned at least two optical path detection components are optical path detection components whose light is not blocked by the carrying surface.

[0067] Among them, affected by the number of light path detection components set, the number of light path detection components whose light is blocked by the carrying surface and the number of light path detection components whose light is not blocked by the carrying surface may be equal to or greater than three. On this basis, among the at least three light path detection components whose light is not blocked by the carrying surface, there must be two light path detection components located on opposite sides of the carrying surface, which are used to calibrate the position of the carrying surface and are recorded as the first detection component and the second detection component.

[0068] Taking the example of the wafer 10 and the carrying surface having equal diameters, when the wafer 10 is carried on the carrying mechanism 100, if the wafer 10 and the carrying mechanism 100 are in an aligned state, no matter how the wafer 10 rotates with the carrying mechanism 100, among the multiple optical path detection components distributed along the straight line, the optical path detection components that originally (when the wafer 10 is not carried on the carrying mechanism 100) cannot detect light still cannot receive light normally, and the optical path detection components that originally can detect light can still detect light normally.

[0069] When the wafer 10 and the carrying surface are in a non-aligned state, affected by the offset of the wafer 10, when the control component controls the carrying mechanism 100 to rotate for a preset period of time, the optical path detection component that can normally detect the light may not be able to detect the light normally due to the obstruction of the wafer 10 located outside the carrying surface, thereby obtaining a detection result that the wafer 10 is offset relative to the carrying surface.

[0070] Based on the above content, the control component can determine whether it is necessary to adjust the position of the carrying mechanism 100 through the driving mechanism 200 based on the light detection status of each optical path detection component, and when the position of the carrying mechanism 100 needs to be adjusted, the adjusted size of the carrying mechanism 100 is related to the rotation speed of the carrying mechanism 100, the radius of the wafer 10 and the preset rotation time of the carrying mechanism 100.

[0071] As described above, during the process of the control component controlling the carrier mechanism 100 to rotate for a preset time, if one or more optical path detection components that can detect the light emitted by the corresponding light emitter 310 cannot detect the light, it is considered that the wafer 10 carried on the carrier mechanism 100 is in a non-aligned state with the carrier mechanism 100, and at this time, the position of the carrier mechanism 100 needs to be adjusted. During the process of adjusting the carrier mechanism 100 by the driving mechanism 200, the adjusted size of the carrier mechanism 100 is related to the rotation speed of the carrier mechanism 100, the radius of the wafer 10, and the preset time for the carrier mechanism 100 to rotate.

[0072] In the above embodiment, in order to ensure that the wafer 10 is in a biased state, a plurality of optical path detection components distributed along a straight line direction can be used to detect the bias of the wafer 10 and the specific bias parameters of the wafer 10. The number of optical path detection components distributed along a straight line direction can be four, five or even more within the permitted range. Figure 8 As shown, in the case where the optical path detection components are all located on the side where the positive direction of the X-axis is located, taking the case where the wafer 10 is offset relative to the carrier mechanism 100 in the positive direction of the X-axis as an example, after the wafer 10 is offset, the strip detection mechanism (along Figure 8 The optical receivers 320 (referred to as first optical receivers) at the two ends of the wafer 10 (in the opposite direction of the Y-axis) that were originally not blocked by the supporting surface may be blocked by the wafer 10 due to the wafer 10 being biased toward the positive direction of the X-axis. In the case where there are a large number of optical path detection components, at least one group of optical path detection components is still provided outside the two blocked first optical receivers (that is, in the negative direction of the Y-axis or the positive direction of the Y-axis), so that after the two first optical receivers are blocked, the bias state and bias parameters of the wafer 10 can still be determined through other optical receivers located outside the two first optical receivers.

[0073] In addition, in the process of arranging multiple optical path detection components distributed along a straight line, multiple light rays emitted by the multiple optical path detection components can all fall on any diameter of the carrier mechanism 100 whose center is located on the axis of the cavity 900. That is, the line connecting the light rays emitted by the multiple optical path detection components distributed along a straight line on the carrier surface is the diameter of the carrier mechanism 100. When the technical solution disclosed in this embodiment is adopted, if the wafer 10 is offset relative to the carrier mechanism 100 along a distribution direction perpendicular to the multiple optical path detection components, the control component may not be able to detect the offset of the wafer 10 relative to the carrier mechanism 100 before the control component controls the carrier mechanism 100 to rotate.

[0074] Based on the above situation, in another embodiment of the present application, the connecting line between the light beams emitted by the respective light emitters 310 of the multiple light path detection components is located outside the center of the circle of the carrying surface, that is, the connecting line on the carrying surface of the light beams emitted by the multiple light path detection components distributed along the straight line direction is any chord in the carrying mechanism 100 that does not pass through the center of the circle. When this technical solution is adopted, the detection range of the multiple light path detection components can be expanded before the control component controls the carrying mechanism 100 to rotate.

[0075] Considering that only one group of multiple optical path detection components distributed along a straight line is provided, if the wafer 10 is offset in a direction away from the optical path detection components, before the control component controls the supporting mechanism 100 to rotate, the multiple optical path detection components in the group cannot normally detect the offset of the wafer 10 due to the obstruction of the supporting mechanism 100.

[0076] Based on the above problems, further, in the embodiment of the present application, multiple groups of multiple optical path detection components distributed along the straight line are provided. Of course, in the process of arranging multiple groups of optical path detection components distributed along the straight line, it is necessary to make different groups of multiple optical path detection components located at different positions of the bearing surface. More intuitively speaking, multiple groups of multiple optical path detection components distributed along the straight line can be distributed along the circumference of the bearing mechanism 100. Then, under the joint action of multiple optical path detection components distributed along the straight line, the detection efficiency, reliability and detection accuracy of the offset condition of the wafer 10 can be improved.

[0077] Based on the reaction chamber disclosed in any of the above embodiments, the present application also discloses a wafer alignment method, which can be applied to any of the above reaction chambers. Fig.23 As shown, the wafer alignment method includes:

[0078] S1. Transfer the wafer to the carrier mechanism in the cavity. As described above, the cavity is provided with a carrier mechanism, and during the wafer processing, the wafer needs to be transferred to the carrier mechanism in the cavity. Specifically, the wafer can be transferred to the cavity by a wafer transfer mechanism such as a robot.

[0079] After the above step S1, the wafer alignment method disclosed in the embodiment of the present application further includes:

[0080] S2. Control the supporting mechanism to rotate around the axis of the cavity for a preset time, and obtain the deviation parameters of the wafer carried by the supporting mechanism relative to the supporting mechanism. Specifically, the supporting mechanism is a device with the functions of carrying wafers and rotating. During the process of the wafer, the supporting mechanism can be used to drive the wafer to rotate to improve the process effect of the wafer. In addition, as mentioned above, the reaction chamber includes an optical path detection component and a control component. The control component can control the supporting mechanism to drive the wafer to rotate for a preset time, and control the optical path detection component to detect the position of the wafer to obtain the deviation parameters between the wafer and the supporting mechanism. Considering that the above-mentioned detection method has been introduced in detail above, it will not be repeated here.

[0081] After the above step S2, the wafer alignment method disclosed in the embodiment of the present application further includes:

[0082] S3. When the deviation parameter is not zero, based on the deviation parameter, the driving mechanism is controlled to drive the carrier mechanism to move in a horizontal direction perpendicular to the axis direction, so that the center of the wafer is located on the axis of the cavity. Specifically, the reaction chamber includes a driving mechanism, which can drive the carrier mechanism to move in a horizontal direction perpendicular to the axis direction of the cavity relative to the cavity; at the same time, in the above step S2, the control component can use the detection result of the optical path detection component to obtain the bias parameter of the wafer relative to the carrier mechanism (the bias parameter is related to the rotation speed of the carrier mechanism, the radius of the wafer and the preset duration of the rotation of the carrier mechanism). Based on the above bias parameters, the adjusted direction and adjusted size of the wafer can be determined, so that the control component can use the driving mechanism to achieve the purpose of dynamically adjusting the position of the wafer, and try to ensure that the center of the wafer is always located on the axis of the cavity, so as to make the wafer more centered and improve the process effect of the wafer.

[0083] Based on the wafer alignment method disclosed in the above embodiment, no matter the number of optical path detection components is one or more, as long as the optical path detection components are located outside the carrying surface of the carrying mechanism, during the process in which the control component controls the carrying mechanism to rotate for a preset period of time, the light detection state of any optical path detection component is one of the first state, the second state, the third state and the fourth state.

[0084] Among them, when the state of the optical path detection component is the first state, the optical receiver of the optical path detection component can always detect the light, which means that within the preset time length, the wafer deviates to the opposite direction of the direction where the optical path detection component is located, and the offset is relatively large (unless all optical path detection components are in the first state, at this time the wafer offset is zero). When the state of the optical path detection component is the second state, the optical receiver of the optical path detection component never detects the light, which means that within the preset time length, the wafer deviates to the direction where the optical path detection component is located, and the offset is relatively large. When the state of the optical path detection component is the third state, the optical receiver of the optical path detection component switches from detecting light to not detecting light, which means that within the preset time length, the wafer also deviates to the opposite direction of the direction where the optical path detection component is located (the state before rotating for the preset time length), but the offset is relatively small. When the state of the optical path detection component is the fourth state, the optical receiver of the optical path detection component switches from not detecting light to detecting light, which means that within the preset time length, the wafer also deviates in the direction of the optical path detection component (the state before rotating for the preset time length), but the offset is relatively small.

[0085] Obviously, when any optical path detection component is in one of the above four states (unless all optical path detection components are in the first state, at which time the wafer offset is zero), it can be considered that the wafer carried by the carrying mechanism is offset relative to the carrying mechanism, and the offset is not zero. Based on this, in the process of adjusting the position of the wafer in the cavity by driving the carrying mechanism in the above step S3, the above step S3 also includes:

[0086] In the selection priority of the horizontal direction when the control component controls the movement of the carrying mechanism through the driving mechanism, the first direction and the second direction are both greater than the third direction and the fourth direction, wherein the first direction is the direction from the center of the carrying surface to the optical path detection component in the first state, the second direction is the direction from the optical path detection component in the second state to the center of the carrying surface, the third direction is the direction from the center of the carrying surface to the optical path detection component in the third state, and the fourth direction is the direction from the optical path detection component in the third state to the center of the carrying surface.

[0087] The control component controls the adjustment size of the movement of the carrying mechanism through the driving mechanism, which is related to the rotation speed of the carrying mechanism, the radius of the wafer and the preset time length, and the calibration sizes corresponding to the light source assembly in the first state and the light source assembly in the second state are both larger than the calibration sizes corresponding to the light source assembly in the third state and the fourth state.

[0088] That is, in the embodiment of the present application, the offset direction and offset size (i.e., the specific parameters of the offset) of the wafer can be determined based on the state of the optical path detection component within the preset time length. As above, if the optical path detection component is in the first state or the second state within the preset time length, it indicates that the offset of the wafer relative to the bearing mechanism is relatively large, and if the optical path detection component is in the third state or the fourth state within the preset time length, it indicates that the offset of the wafer relative to the bearing mechanism is relatively small.

[0089] For this reason, if there are optical path detection components in the first state and / or the second state among the multiple optical path detection components, even if there are optical path detection components in the third state and / or the fourth state among the multiple optical path detection components, in the process of the control component driving the bearing mechanism to move horizontally through the driving mechanism, the bearing mechanism is preferentially controlled to move along the first direction and / or the third direction. Correspondingly, if there are only optical path detection components in the third state and / or the fourth state, the control component can drive the bearing mechanism to move horizontally along the third direction and / or the fourth direction through the driving mechanism.

[0090] Correspondingly, the adjustment size of the bearing mechanism is also related to the state of the optical path detection assembly. Specifically, compared with the optical path detection assembly in the first state and the second state, the optical path detection assembly in the third state and the fourth state requires a smaller adjustment size. In addition, the adjustment size of the bearing mechanism controlled by the control assembly through the driving mechanism is related to the rotation speed of the bearing mechanism, the radius of the wafer and the preset time.

[0091] More specifically, taking the case where the optical path detection components are distributed along the circumference of the supporting mechanism as an example, Figure 6 As shown, when there are two optical path detection components, and the angle between the two optical path detection components and the center of the carrier mechanism is 90°, the wafer is rotated with the carrier mechanism at a speed ω. Taking the clockwise rotation of the wafer as an example, within the preset time length Δt, the position of the wafer relative to the process chamber changes (specifically, the center position moves from A to B), the optical path detection component 1 in the X-axis direction can always detect light, and the optical path detection component 2 on the Y-axis changes from being unable to detect light to being able to detect light. Therefore, it can be judged that within the aforementioned time period, the wafer needs to make a larger position adjustment on the X-axis, and the adjustment spacing can be specifically ΔX=2rωΔt, while a smaller position adjustment is required on the Y-axis, and the adjustment spacing can be specifically ΔY=rωΔt.

[0092] It should be noted that since the entire area of ​​the wafer will be covered after the carrier mechanism rotates one circle, it is best not to adjust the carrier mechanism after it rotates one circle during the inspection process, but to calculate and adjust after the preset time Δt. Within the tolerance range of the hardware structure, the smaller Δt is, the higher the adjustment accuracy is. Optionally, the preset time Δt is 0.01 to 10s, and preferably, Δt can be 0.5s.

[0093] When the number of optical path detection components distributed along the circumference of the supporting mechanism is three, as shown in FIG. Figure 7 As shown in the figure, within the preset time length Δt, the position of the wafer changes relative to the cavity (specifically, the center position moves from A to B), and the optical path detection component 1 can always detect light, which means that the direction in which it is located needs to be adjusted more (for example, Δ1=2rωΔt can be selected), and the radius of the optical path detection component 1 is 30° with the X-axis and 60° with the Y-axis. Therefore, the component of the movement of the optical path detection component 1 on the X-axis can be ΔX1=cos60°*Δ1, which can be specifically 3 1 / 2rωΔt; The component of the movement of the optical path detection component 1 on the Y axis is ΔY1=sin30°*Δ1, which can be specifically rωΔt. Similarly, the optical path detection component 2 needs to make a smaller position adjustment (such as Δ2=rωΔt) to change from being unable to detect light to being able to detect light, and the radius of the optical path detection component 2 is parallel to the Y axis, so it only contributes to the movement of the Y axis, that is, ΔX1=0, ΔY2=Δ2, which can be specifically ΔY2=rωΔt. Since the optical path detection component 3 can never sense the change in light, it does not contribute to the movement. Finally, the contribution of the three optical path detection components is summed to obtain the final movement amount (when the first detection component and the second detection component are arranged symmetrically about the X-axis, the direction, i.e., the sign of the summation, needs to be determined according to the position of the optical path detection component on the wafer. For example, for optical path detection component 1, it is located in the negative direction of the X-axis, so ΔY1 takes a negative sign when summing, and optical path detection component 1 is located in the negative direction of the Y-axis, so ΔX1 takes a negative sign when summing. For another example, for optical path detection component 3, it is located in the negative direction of the X-axis, so ΔY1 takes a negative sign when summing, and optical path detection component 3 is located in the positive direction of the Y-axis, so ΔX1 takes a positive sign when summing), ΔX=ΣΔX i , ΔY=ΣΔY i , as for the example given, ΔX = -ΔX1 + ΔX2 + ΔX3 = -3 1 / 2 rωΔt, ΔY=-ΔY1+ΔY2-ΔY3=0.

[0094] When multiple optical path detection components are distributed in a straight line direction, even if the wafer is in an alignment state, the multiple optical path detection components include optical path detection components whose light is partially blocked and optical path detection components whose light is not blocked. At the same time, the two optical path detection components whose adjacent light is blocked among the multiple optical path detection components whose light is not blocked are respectively the first detection component and the second detection component.

[0095] Specifically, in this embodiment, the control component can establish a rectangular coordinate system with the distribution direction of multiple optical path detection components as the Y-axis, and the control component can obtain the corresponding Y values ​​y1 and y2 of the first detection component and the second detection component on the Y-axis, where y1 is greater than y2, that is, the first detection component is located in the positive direction of the Y-axis of the second detection component.

[0096] In an embodiment of the present application, when the wafer is carried on the carrying surface and after the control component controls the carrying mechanism to rotate for a preset period of time, the control component can obtain the Y values ​​y1” and y2” of the two optical path detection components whose light is not blocked and the optical path detection components whose light is blocked are closest to each other among the multiple optical path detection components whose light is not blocked through multiple optical path detection components distributed along a straight line. Specifically, these two optical path detection components are the two optical path detection components that are just not blocked by the wafer (and / or the carrying mechanism), and the offset of the wafer can be characterized by their Y values.

[0097] Based on the above technical solution disclosed in the embodiment of the present application, in the wafer alignment method, the above step S3 also includes:

[0098] During the process of the control component controlling the carrying mechanism to rotate for a preset time, if y1”>y1 and continues to decrease, the control component controls the driving mechanism to drive the carrying mechanism to move along the negative direction of the X-axis. The adjustment size is related to the rotation speed of the carrying mechanism, the radius of the wafer and the preset time.

[0099] Specifically, when the supporting mechanism rotates, if y1”>y1, and continues to decrease, it means that the edge of the wafer corresponding to multiple optical path detection components distributed along the straight line direction gradually moves toward the position corresponding to y1. In this case, the main offset direction of the wafer is the positive direction of the X-axis. Furthermore, for the above situation, the supporting mechanism can be moved in the negative direction of the X-axis to make the center of the wafer closer or even located on the axis of the cavity. As for the size of the adjustment, it is related to the rotation speed of the supporting mechanism, the radius of the wafer and the preset time, and is not limited here. In addition, it should be noted that when y1”>y1, it means that the wafer is still offset in the positive direction of the Y-axis, and is blocked by the supporting mechanism, y2”=y2.

[0100] At the same time, in the embodiment of the present application, the above step S3 also includes:

[0101] During the process of the control component controlling the carrier mechanism to rotate for a preset time, if y2”<y2 and continues to decrease, the control component controls the driving mechanism to drive the carrier mechanism to move along the positive direction of the Y axis. The adjustment size is related to the rotation speed of the carrier mechanism, the radius of the wafer and the preset time.

[0102] Specifically, when the carrier mechanism rotates, if y2” < y2 and it continues to decrease, it indicates that the edge of the wafer corresponding to multiple optical path detection components distributed in a straight line direction gradually moves away from the position corresponding to y2. In this case, the main offset direction of the wafer is the negative direction of the Y-axis. Furthermore, for the foregoing situation, the carrier mechanism can be moved in the positive direction of the Y-axis to make the center of the wafer closer to, or even on the axis of the positioning cavity. As for the size of the adjustment, it is related to the rotation speed of the carrier mechanism, the radius of the wafer, and the preset duration, which is not limited here. Additionally, it should be noted that when y2” < y2, it indicates that the wafer has an offset in the negative direction of the Y-axis, and due to the shielding effect of the carrier mechanism, y1” = y1.

[0103] Based on the wafer alignment method disclosed in the above embodiments, specifically, for the technical solution in which multiple optical path detection components are distributed in a straight line direction, when the number of multiple optical path detection components is one group, as Figure 18 to Figure 21 shown (the solid line represents the position of the wafer after rotating for a preset duration Δt, and the dotted line represents the position of the wafer before rotating for a preset duration Δt), taking the example of the wafer rotating clockwise (rotation speed ω), after a preset duration Δt, the coordinates of the two unobstructed optical path detection components of the optical path detection component whose nearest light is blocked on the Y-axis are y1” and y2” respectively. At this time, there are several cases:

[0104] 1) As Fig.18 shown, the position of the wafer is biased towards the negative direction of the X-axis. Due to the influence of the shielding of the carrier mechanism, multiple optical path detection components cannot normally detect the position of the wafer. However, in fact, at this time, the carrier mechanism is moved in the positive direction of the X by ΔX, and the specific size can be determined according to the wafer radius r, the rotation speed ω, and the preset duration Δt, that is, ΔX = f(r, ω, Δt), such as approximately selecting ΔX = 2rωΔt);

[0105] 2) As Fig.19 shown, the wafer rotates from being biased towards the positive direction of the X-axis to being biased towards the negative direction of the X-axis. Since the optical path detection components will still be blocked by the carrier mechanism after the wafer rotates, actually only y2” < y2 can be detected. At this time, it is necessary to move ΔY = f(y2, y2”), such as approximately selecting ΔY = y2 - y2”, and ΔX = f(y2', y2”), such as approximately selecting ΔX = y2” - y2'. Similarly, when the wafer rotates from being biased towards the negative direction of the X-axis to being biased towards the positive direction of the X-axis, the situation is similar. Due to the influence of the shielding of the carrier mechanism, only y1” > y1 can be detected. At this time, it is necessary to move ΔY = f(y1, y1”), such as approximately selecting ΔY = y1 – y1”, and ΔX = f(y1', y1”), such as approximately selecting ΔX = y1” - y1'. Where y1' and y2' are the coordinate values of the two unobstructed optical path detection components of the optical path detection component whose nearest light is blocked on the Y-axis before the carrier mechanism rotates.

[0106] 3) As Fig. 20 and 21 shown, after the carrier mechanism rotates for a preset duration, when the wafer is in these two states, by using multiple optical path detection components distributed in a linear direction, the results of y1”>y1 and y2”<y2 can be directly obtained. In both of these cases, it indicates that the wafer is offset in the positive direction of the X-axis relative to the carrier mechanism. Therefore, it is necessary to move ΔY = f(y1', y1”, y2', y2”), such as approximately selecting ΔY = (y1” - y1' + y2” - y2') / 2, ΔX = (r 2 - y1 2 ) 1 / 2 -{r 2 -[(y1” - y2”) / 2] 2} 1 / 2 .

[0107] As described above, before the control component controls the rotation of the carrier mechanism, the relative position between the wafer and the carrier mechanism can also be detected by using multiple optical path detection components distributed in a linear direction. Specifically, the control component is further configured to obtain the Y values y1' and y2' of the two optical path detection components that are closest to the optical path detection component where the light is blocked among the multiple optical path detection components where the light is not blocked before the wafer is carried on the carrying surface and before the control component controls the rotation of the carrier mechanism. The use of y1' and y2' can characterize the offset of the wafer relative to the carrying surface on the Y-axis when the wafer is placed on the carrying surface.

[0108] Based on the above technical content, in the wafer alignment method disclosed in the embodiments of the present application, before step S2, it further includes:

[0109] When the actual distance between y1' and y2' is greater than the reference distance between y1 and y2, and y1'≠y1, y2'≠y2, control the wafer transfer mechanism to be adjusted in the X-axis direction, and the adjustment size is related to the difference between the actual distance and the reference distance. The wafer transfer mechanism is used to transfer the wafer into or out of the cavity.

[0110] Specifically, when the actual spacing between y1' and y2' is greater than the reference spacing between y1 and y2, and y1'≠y1, y2'≠y2, it means that the wafer is offset on the X-axis. As for whether the wafer is biased in the positive direction of the X-axis or the negative direction of the X-axis, it depends on the relationship between multiple optical path detection components distributed along the straight line and the X-axis. When the optical path detection components are all located in the positive direction of the X-axis, the wafer is biased in the positive direction of the X-axis, and the film transmission mechanism needs to be adjusted in the negative direction of the X-axis; correspondingly, when the optical path detection components are all located in the negative direction of the X-axis, the wafer is biased in the negative direction of the X-axis, and the film transmission mechanism needs to be adjusted in the positive direction of the X-axis. In addition, if the optical path detection components are located on the Y-axis, the above technical solution cannot be used to obtain other Y values ​​except y1 and y2. For this reason, the optical path detection components are placed outside the Y-axis as much as possible.

[0111] When the actual spacing between y1' and y2' is greater than the reference spacing between y1 and y2, and y1'>y1, y2'=y2, the film transmission mechanism is controlled to be adjusted in the negative direction of the Y axis, and the size of the adjustment is related to the difference between the actual spacing and the reference spacing. Specifically, when the actual spacing between y1' and y2' is greater than the reference spacing between y1 and y2, and y1'>y1, y2'=y2, it means that the offset direction of the wafer is the positive direction of the Y axis, and the position of the film transmission mechanism needs to be adjusted in the negative direction of the Y axis.

[0112] When the actual spacing between y1' and y2' is greater than the reference spacing between y1 and y2, and y1'=y1, y2'<y2, the film transmission mechanism is controlled to be adjusted in the positive direction of the Y axis, and the size of the adjustment is related to the difference between the actual spacing and the reference spacing. Specifically, when the actual spacing between y1' and y2' is greater than the reference spacing between y1 and y2, and y1'=y1, y2'<y2, it means that the offset direction of the wafer is the negative direction of the Y axis, and the position of the film transmission mechanism needs to be adjusted in the positive direction of the Y axis.

[0113] Regarding the above process, an example is given below in which a group of multiple optical path detection components (referred to as strip-shaped detection mechanisms) distributed along a straight line is provided.

[0114] like Figure 9-Figure 17 As shown, when the wafer is carried on the carrying mechanism and the control component does not control the rotation of the carrying mechanism, if the wafer position does not completely coincide with the position of the carrying mechanism, the following situations may occur (the dotted line and the solid line represent the chuck and wafer positions, respectively):

[0115] (1) There is only an offset in the X-axis direction, such as Fig. 9 and Fig.10 As shown, the detection results of the strip detection mechanism are y1' and y2'. Fig.10In the case shown, due to the occlusion of the support structure, the results measured by the strip detection mechanism are still y1 and y2. At this time, if multiple strip detection mechanisms are set, such as another strip detection mechanism for detecting the Y coordinate is set on the opposite side of the strip detection mechanism, or a strip detection mechanism for detecting the X coordinate is set at the 90° position, it is still possible to obtain Fig.10 The wafer shown in FIG. 1 is offset. However, for cost considerations, if only one strip detection mechanism is installed, it cannot be identified at this stage, but it can be identified during the subsequent rotation process and will not have a substantial impact on the final detection and adjustment effect.

[0116] (2) Only the Y-axis is offset, such as Fig.11 and Fig.12 As shown, affected by the occlusion of the bearing mechanism, the detection results of the strip detection mechanism are y1' and y2 (i.e. Fig.11 ), y1 and y2' (i.e. Fig.12 ).

[0117] (3) There is an offset in both the X-axis and Y-axis directions, such as Figure 13-16 As shown, due to the influence of the support structure, only Fig.13 The corresponding detection results of the strip detection mechanism are y1' and y2'. Fig.14 The corresponding detection results of the strip detection mechanism are y1' and y2, Fig.15 The corresponding detection results of the bar detection mechanism are y1 and y2. Fig.16 The corresponding detection results of the strip detection mechanism are y1 and y2'.

[0118] Based on the above situation, the corresponding detection and adjustment process is as follows:

[0119] The wafer is transferred into the process chamber for detection, and the detected coordinates y1' and y2' are recorded.

[0120] If y1'-y1>0 and y2'-y2<0, the X-axis coordinate needs to be adjusted by the amount ΔX=(r 2 -y1 2 ) 1 / 2 -{r 2 -[(y1'-y2') / 2] 2} 1 / 2 (like Fig.17 shown);

[0121] If y1'-y1>0 and y2'-y2>0, the X-axis coordinate needs to be adjusted by the amount ΔX=(r 2 -y1 2 ) 1 / 2 -{r 2 -[(y1'-y2') / 2] 2}1 / 2 , but at this time due to the occlusion of the bearing mechanism (corresponding to Fig.14 ), it is impossible to record the exact value of y2', so y2 can be used to replace y2' to make an approximate adjustment ΔX = (r 2 -y1 2 ) 1 / 2 -{r 2 -[(y1'-y2) / 2] 2} 1 / 2 ;

[0122] If y1'-y1<0 and y2'-y2<0, the X-axis coordinate needs to be adjusted by the amount ΔX=(r 2 -y1 2 ) 1 / 2 -{r 2 -[(y1'-y2') / 2] 2} 1 / 2 However, due to the obstruction of the bearing mechanism, the accurate value of y1' cannot be recorded. The adjustment value ΔX = (r 2 -y1 2 ) 1 / 2 -{r 2 -[(y1-y2') / 2] 2} 1 / 2 ;

[0123] If y1'-y1<0 and y2'-y2>0, the X-axis coordinate cannot be adjusted because the exact values ​​of y1' and y2' cannot be detected. For the Y-axis coordinate, if there is no support mechanism blocking it, the amount of adjustment of the Y-axis coordinate is accurate ΔY=-(y1'+y2') / 2. If there is a support mechanism blocking it, it is still approximated by ΔY=-(y1'+y2') / 2 (for example, if y1' is blocked and cannot be recorded but only y1 can be recorded, then ΔY=-(y1+y2') / 2, and the same is true for y2').

[0124] In the above technical scheme, after the adjustment amount is calculated, the film transport mechanism can be controlled to transfer the wafer out of the cavity, and the position of the film transport mechanism such as the robot can be adjusted according to the above-calculated adjustment amount (the size of the moving position of the film transport mechanism is equal to the calculated ΔX and ΔY, and the direction is opposite). After that, the wafer is re-transmitted into the cavity using the film transport mechanism that has completed the adjustment.

[0125] During the above process, it is also necessary to consider whether there is a second strip detection mechanism. If there is a second strip detection mechanism, it is necessary to comprehensively consider the detection results of the second strip detection mechanism before transferring the wafer out of the process chamber for position calibration. At this time, recalculate the adjustment amount. If the adjustment amount is equal to the result of the first strip detection mechanism in size and direction, then the result is undisputed. If the size is not equal, the value with the larger absolute value is taken as the final adjustment amount, and then transfer the wafer out of the process chamber for position calibration.

[0126] In the case where there is only one strip detection mechanism, in order to further improve the detection accuracy and reliability of the wafer bias condition, after completing one detection, the position of the wafer can be changed by using the supporting mechanism, such as rotating the wafer 180°. After that, the alignment state between the wafer and the supporting mechanism is measured by using the strip detection mechanism, and the adjustment amount is recalculated. If the adjustment amount is equal to the result before rotating 180° but opposite in direction, the result is undisputed. If they are not equal in size, the value with the larger absolute value is taken as the final adjustment amount. At this time, the wafer is transferred out of the process chamber, and the position is calibrated by recalculating the adjustment amount according to the results of multiple detections.

[0127] Specifically, the wafer alignment method disclosed in the embodiment of the present application also includes:

[0128] After obtaining a set of y1' and y2', the supporting mechanism is controlled to rotate 180°;

[0129] Another set of y1' and y2' is obtained again, and the set with a larger distance between the corresponding y1' and y2' is taken as the reference value of y1' and y2'. The reference value of y1' and y2' is the basic data for calculating the adjusted amount of the film transmission mechanism.

[0130] In order to further improve the alignment of the wafer, in the above-mentioned wafer alignment method, step S2 and step S3 can be performed in a loop. That is, after a relatively short preset time, the position of the carrier mechanism is adjusted once based on the deviation parameter, and then, after a relatively short preset time, the position of the carrier mechanism is adjusted once based on the new deviation parameter. In this case, on the one hand, the adjustment accuracy of the wafer can be improved, and on the other hand, the adjustment efficiency of the wafer can also be improved.

[0131] Fig. 22 A flow chart showing the technical solution of adjusting the position of a wafer by distributing the optical path detection components along a straight line direction.

[0132] In another embodiment of the present application, both the light emitter 310 and the light receiver 320 can be installed outside the cavity 900 to increase their service life and prevent them from having an adverse effect on the process environment in the cavity 900. In order to ensure that the light emitted by the light emitter 310 can be detected by the light receiver 320 without being blocked by other objects, Figure 1 As shown, the cavity 900 may be provided with an observation window 800, which may be made of a transparent, hard and heat-resistant material such as glass or quartz. During the assembly of the reaction chamber, one of the light emitter 310 and the light receiver 320 may be arranged corresponding to the observation window 800 at the top of the cavity 900, and the other may be arranged corresponding to the observation window 800 at the bottom of the cavity 900.

[0133] The above embodiments of the present application focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0134] The above is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims

1. A reaction chamber, characterized in that: The reaction chamber comprises a carrying mechanism, a driving mechanism, an optical path detection component, a cavity and a control component, wherein the carrying mechanism has a carrying surface for carrying a wafer, and the carrying mechanism is movably mounted on the cavity through the driving mechanism; At least three of the optical path detection components are distributed along a straight line, and two of the multiple optical path detection components are respectively a first detection component and a second detection component, light emitted by at least one optical path detection component located between the first detection component and the second detection component is blocked by the carrying surface, and two of the multiple optical path detection components whose light is not blocked by the carrying surface that are closest to the optical path detection component whose light is blocked by the carrying surface are respectively the first detection component and the second detection component; The optical path detection component includes a light emitter and a light receiver, one of which is installed at the top of the cavity, and the other is installed at the bottom of the cavity, and the light emitter and the light receiver are arranged relatively along the axis direction of the cavity, and the light receiver is used to detect the light emitted by the light emitter, and the control component is used to control the bearing mechanism to rotate around the axis of the cavity to a preset time length, and obtain the deviation parameter between the wafer carried by the bearing mechanism and the bearing mechanism; The control component is used to determine whether it is necessary to adjust the position of the supporting mechanism through the driving mechanism based on the light detection status of each of the optical path detection components. The control component is also used to control the driving mechanism to drive the supporting mechanism to move in a horizontal direction perpendicular to the axial direction based on the deviation parameter when the deviation parameter is not zero, so that the center of the wafer is located on the axis of the cavity. The adjusted size of the supporting mechanism is related to the rotation speed of the supporting mechanism, the radius of the wafer and the preset time length.

2. The reaction chamber according to claim 1, characterized in that: The number of the optical path detection components is multiple groups, and the multiple groups of optical path detection components are distributed along the circumference of the bearing mechanism, and the light emitted by the light emitter in any optical path detection component is located outside the bearing surface; The control component is used to determine whether it is necessary to adjust the position of the carrying mechanism through the driving mechanism based on the light detection status of each of the optical path detection components. When the position of the carrying mechanism needs to be adjusted, the adjusted size of the carrying mechanism is related to the rotation speed of the carrying mechanism, the radius of the wafer and the preset time length.

3. The reaction chamber according to claim 2, characterized in that: The number of the optical path detection components is two groups, and the angle spanned by the two groups of optical path detection components in the circumferential direction of the supporting mechanism is greater than or equal to 90° and less than 270°.

4. The reaction chamber according to claim 2, characterized in that: The number of the optical path detection components is three groups, and the triangle formed by the three groups of optical path detection components is an acute-angle triangle.

5. The reaction chamber according to claim 1, characterized in that: The connecting line between the multiple light beams emitted by the multiple light path detection components is located outside the center of the bearing surface.

6. The reaction chamber according to claim 1, characterized in that: A plurality of light path detection components distributed along a straight line are provided in a plurality of groups.

7. A wafer alignment method, applied to the reaction chamber according to any one of claims 1 to 6, characterized in that: The wafer alignment method comprises: S1, transferring the wafer to the carrying mechanism in the cavity; S2, controlling the carrying mechanism to rotate around the axis of the cavity for a preset time, and obtaining the deviation parameter of the wafer carried by the carrying mechanism relative to the carrying mechanism; the control component is used to use the distribution direction of the plurality of optical path detection components as Y The rectangular coordinate system is established by the axis and is used to obtain the first detection component and the second detection component in Y The corresponding axis Y value y 1 and y 2, among which, y 1 is greater than y 2; When the wafer is carried on the carrying surface, and after the carrying mechanism rotates for a preset time, the two optical path detection components of the plurality of optical path detection components whose light is not blocked are closest to the optical path detection component whose light is blocked. Y value y 1'' and y 2''; S3. When the deviation parameter is not zero, based on the deviation parameter, control the driving mechanism to drive the carrying mechanism to move in a horizontal direction perpendicular to the axis direction, so that the center of the wafer is located on the axis of the cavity; wherein, during the process of the control component controlling the carrying mechanism to rotate for the preset time, if y 1''> y 1, and continues to decrease, the control component controls the driving mechanism to drive the carrying mechanism along X The axis moves in the negative direction, and the size of the adjustment is related to the rotation speed of the carrier mechanism, the radius of the wafer and the preset time; During the process of the control component controlling the bearing mechanism to rotate for a preset time, if y 2''< y 2, and continues to decrease, the control component controls the driving mechanism to drive the carrying mechanism along Y The axis moves in the positive direction, and the adjustment size is related to the rotation speed of the supporting mechanism, the radius of the wafer and the preset time.

8. The wafer alignment method according to claim 7, applied to the reaction chamber according to claim 2, characterized in that: During the process in which the control component controls the bearing mechanism to rotate for a preset time, the light detection state of any of the light path detection components is one of the first state, the second state, the third state and the fourth state, When the state of the optical path detection component is the first state, the optical receiver of the optical path detection component can always detect light; When the state of the optical path detection component is the second state, the optical receiver of the optical path detection component never detects any light; When the state of the optical path detection component is the third state, the optical receiver of the optical path detection component switches from detecting light to not detecting light; When the state of the optical path detection component is the fourth state, the optical receiver of the optical path detection component switches from not detecting light to detecting light; The step S3 further comprises: In the selection priority of the horizontal direction when the control component controls the movement of the carrying mechanism through the driving mechanism, the first direction and the second direction are both greater than the third direction and the fourth direction, wherein the first direction is the direction from the center of the carrying surface to the optical path detection component in the first state, the second direction is the direction from the optical path detection component in the second state to the center of the carrying surface, the third direction is the direction from the center of the carrying surface to the optical path detection component in the third state, and the fourth direction is the direction from the optical path detection component in the fourth state to the center of the carrying surface; The adjustment size of the movement of the carrying mechanism controlled by the control component through the driving mechanism is related to the rotation speed of the carrying mechanism, the radius of the wafer and the preset time length, and the calibration sizes corresponding to the optical path detection components in the first state and the second state are larger than the calibration sizes corresponding to the optical path detection components in the third state and the fourth state.

9. The wafer alignment method according to claim 7, characterized in that: The control component is also used to obtain the optical path detection components of the plurality of optical path detection components whose light is not blocked, and the optical path detection components whose light is blocked are the closest to the optical path detection components whose light is blocked, when the wafer is supported on the support surface and before the control component controls the support mechanism to rotate. Y value y 1' and y 2'; Before step S2, the following steps are also included: In the y 1' and y The actual spacing between 2' is greater than y 1 and y 2, and the reference spacing between y 1'≠ y 1, y 2'≠ y 2, the control edge X A wafer conveying mechanism is adjusted in the axial direction, the adjustment size is related to the difference between the actual spacing and the reference spacing, and the wafer conveying mechanism is used to transfer the wafer into or out of the cavity; In the y 1' and y The actual spacing between 2' is greater than y 1 and y 2, and the reference spacing between y 1'> y 1, y 2'= y 2, the control edge Y The transmission mechanism is adjusted in the negative direction of the axis, and the size of the adjustment is related to the difference between the actual spacing and the reference spacing; In the y 1' and y The actual spacing between 2' is greater than y 1 and y 2, and the reference spacing between y 1'= y 1, y 2'< y 2, the control edge Y The transmission mechanism is adjusted in the positive direction of the axis, and the adjustment size is related to the difference between the actual spacing and the reference spacing.

10. The wafer alignment method according to claim 9, characterized in that: The wafer alignment method further comprises: In obtaining a set of y 1' and y 2', control the carrying mechanism to rotate 180°; Re-acquire another set of y 1' and y 2', and take the corresponding y 1' and y The group with larger spacing between 2' is y 1' and y 2' reference value.

11. The wafer alignment method according to any one of claims 7 to 10, characterized in that: The wafer alignment method further comprises: Step S2 and step S3 are performed in a loop.

12. The wafer alignment method according to any one of claims 7 to 10, characterized in that: The preset time length ranges from 0.01 to 10 s.

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