A high transmittance and low resistance conductive glass

Abstract

The invention relates to the technical field of conductive glass, and discloses a conductive glass with high transmittance and low resistance. First, a layer of SiO2 is deposited as a bonding layer on a glass substrate by vacuum magnetron sputtering. When depositing SiO2, Ar and O2 are used as working gases, and voltage is applied to discharge Ar and O2, so that Ar+ ions and O+ ions bombard a Si target surface, and SiO2 nanogroups are deposited on a PET substrate. After accumulation of deposition time, the thickness is controlled to be 5-10nm. A grid Cu+ surface ITO structure is adopted, and copper plating is performed on the surface in an easy bonding state of a Glass surface as a structural transition. In addition, in terms of optics, the reflectivity of a Cu metal layer is reduced, and the visual effect of a product is improved. At the same time, as an alloy, the glass has conductive properties, can conduct the conductivity between a Cu layer and ITO, and supplement the conductive properties of a grid blank area. The product as a whole has a high transmittance, which provides a guarantee for the stability and durability of the product and saves costs.

Description

Technical Field

[0001] The invention relates to the technical field of conductive glass, in particular to a conductive glass with high transmittance and low resistance. Background Art

[0002] In common transparent electrode applications, ITO transparent conductive glass and transparent conductive film are mostly used. Among them, transparent conductive ITO film with higher resistance is mainly used in touch sensors, and transparent conductive ITO glass with lower resistance is mainly used in display modules and large-area applications. In flexible application fields, if low resistance is required, transparent conductive ITO film is indispensable, but the low resistance transparent conductive ITO film has low transmittance, which greatly limits the application of devices. The present invention provides an effective breakthrough solution to these limitations. Summary of the invention

[0003] In view of the deficiencies in the prior art, the present invention provides a high-transmittance and low-resistance conductive glass, which solves the problems in the above-mentioned background technology.

[0004] To achieve the above-mentioned purpose x, the present invention provides the following technical solution: a high-transmittance and low-resistance conductive glass, (serial number: 20 layers) first, on a glass substrate, a layer of SiO2 is deposited as a bonding layer by vacuum magnetron sputtering;

[0005] When depositing SiO2, Ar and O2 are used as working gases. Voltage is applied to discharge Ar and O2. Ar+ ions and O+ ions bombard the Si target surface, and SiO2 nanogroups are deposited on the PET substrate. After the accumulation of deposition time, the thickness is controlled to be 5-10nm.

[0006] Preferably, the (serial number: 21 layer): similarly, a layer of Cu-W-Ni alloy is deposited on the surface of the 20 layer, using magnetron sputtering, Ar as the working gas, applying voltage to discharge Ar, Ar+ ions bombarding the Cu-W-Ni alloy target surface, Cu-W-Ni alloy nanogroups are deposited on the surface of the 20 layer, and after accumulation of deposition time, the thickness is controlled to be 10-20nm.

[0007] Preferably, the above (serial number: 30 layers): similarly, a layer of pure Cu is deposited on the surface of the 21 layer by magnetron sputtering, Ar is used as the working gas, voltage is applied to discharge Ar, Ar+ ions bombard the Cu target surface, and Cu nanogroups are deposited on the surface of the 21 layer. After the accumulation of deposition time, the thickness is controlled to be 200-500nm.

[0008] Preferably, the (serial number: 31 layer): similarly, a layer of Cu-W-Ni alloy is deposited on the surface of the 30 layer, using magnetron sputtering, Ar as the working gas, applying voltage to discharge Ar, Ar+ ions bombarding the Cu-W-Ni alloy target surface, Cu-W-Ni alloy nanogroups are deposited on the surface of the 30 layer, and after accumulation of deposition time, the thickness is controlled to be 10-20nm.

[0009] Preferably, the grid etching is performed after the coating is completed, leaving the Cu grid lines and the adhesive layer of the overall surface, so as to obtain a brand new (21-31) grid + 20 overall composite layer 32 layers.

[0010] Preferably, the (serial number: 40th layer): similarly, a layer of ITO film is deposited on the surface of the 32nd layer, using magnetron sputtering, Ar and O2 as working gases, applying voltage to discharge Ar and O2, Ar+ ions and O+ ions bombard the surface of the ITO target (the target material composition ratio of this layer is: In2O3:SnO2=93:7wt%-90:10wt%), and ITO nanogroups are deposited on the surface of the 32nd layer. After the accumulation of deposition time, the thickness is controlled to be 10-20nm.

[0011] Compared with the prior art, the present invention provides a high-transmittance and low-resistance conductive glass, which has the following beneficial effects:

[0012] The grid Cu+surface ITO structure is adopted, and the surface copper is plated in the easy-to-bond state of the Glass surface. The 20th layer is used as a connecting layer and is plated together with the 21 / 30 / 31st layer in the same vacuum process. The 20th layer links the 10th layer and the 21st layer to improve the adhesion of the 21st layer. The 21st layer links the 20th layer and the 30th layer as a structural transition. In addition, in terms of optics, the reflectivity of the Cu metal layer is reduced, which improves the visual effect of the product. The 31st layer is used as a protective layer for the Cu metal layer. At the same time, as an alloy, it has conductive properties and can conduct the conductivity between the Cu layer and ITO. The 40th layer is used as a surface conductive layer to supplement the conductive properties of the blank area of ​​the grid. The product as a whole forms a A transparent electrode flexible material with high transmittance and low resistance is used. The 32 layers are patterned with appropriate PIN pin lines, which can save traditional silver paste materials, provide guarantee for the stability and durability of the product, and save costs at the same time. After the pattern is formed, ITO crystallization treatment can be carried out, which is also the innovation of the present invention. The ITO layer structure after crystallization is stable and the durability is improved. It is suitable for scenes with more stringent requirements, and can be prepared at low temperature. The pure ITO post-baking or online baking process is omitted. Different patterning designs can be made for the 21-31 layers, such as hexagons, squares, circles, etc., and different line width / window ratios (LVRs) can be obtained. Economical LVRs can be obtained through optimization. DETAILED DESCRIPTION

[0013] Embodiment 1:

[0014] A high transmittance and low resistance conductive glass.

[0015] 10Glass

[0016] 20SiO2 layer 10nm

[0017] 21Cu-W-Ni 15nm

[0018] 30Cu (grid) layer 200nm

[0019] 31Cu-W-Ni 15nm

[0020] Etching method: photolithography, Cu line width: 10um, blank grid: 200um*200um

[0021] 40ITO layer 20nm

[0022] Production process:

[0023] Step 1:

[0024] On the product (10-31 layers) of the structure of the present invention, a circuit mask is overprinted on the surface of the 31 layer through a mask-type photolithography process, and etched with 5-8% sulfuric acid. After cleaning, the corresponding Cu grid pattern appears, and the surface presents the 31 layer surface and the etched 20 layer surface;

[0025] Step 2:

[0026] On the product formed in step 1, magnetron sputtering is used (here it needs to be expanded), Ar and O2 are used as working gases, voltage is applied to discharge Ar and O2, Ar+ ions and O+ ions bombard the surface of the ITO target (the target material composition ratio of this layer is: In2O3:SnO2=90:10wt%), and nano-scale ITO material is deposited on the surface of the 32 layer. After the accumulation of deposition time, the thickness is controlled to be 20nm;

[0027] Step 3:

[0028] The product formed in step 2 is baked in a tunnel furnace or oven at 150 degrees Celsius for 60 minutes, and the ITO layer in the product formed in step 2 is in a crystalline state;

[0029] In this way, the corresponding transparent conductive film has been manufactured.

[0030] Product performance:

[0031] Adhesion: 100 / 100 (no falling off after 100-grid test)

[0032] Surface resistance: 4.5 ohms / square

[0033] Visible light transmittance: 84.5%

[0034] High temperature and high humidity test: 500Hrs, 80℃, 80RH%, resistance value change rate <1%;

[0035] Comparison case product 1:

[0036] Glass / SiO2(20nm) / ITO(300nm) high temperature process

[0037] Product performance:

[0038] Adhesion: 100 / 100 (no falling off after 100-grid test)

[0039] Surface resistance: 4.5 ohms / square

[0040] Visible light transmittance: 78.0%

[0041] High temperature and high humidity test: 500Hrs, 80℃, 80RH%, resistance value change rate <5%.

[0042] Embodiment 2:

[0043] A high transmittance and low resistance conductive glass.

[0044] 10Glass

[0045] 20SiO2 layer 10nm

[0046] 21Cu-W-Ni 15nm

[0047] 30Cu (grid) layer 500nm

[0048] 31Cu-W-Ni 15nm

[0049] Etching method: photolithography, Cu line width: 5um, blank grid: 200um*200um

[0050] 40ITO layer 15nm

[0051] Production process:

[0052] Step 1:

[0053] On the product (10-30 layers) of the structure of the present invention, a circuit mask is overprinted on the surface of the 30th layer through a mask-type photolithography process, and etched with 5-8% sulfuric acid. After cleaning, the corresponding Cu grid pattern appears, and the surface presents the 30th layer surface and the etched 20th layer surface;

[0054] Step 2:

[0055] On the product formed in step 1, magnetron sputtering is used (this needs to be expanded), Ar and O2 are used as working gases, voltage is applied to discharge Ar and O2, Ar+ ions and O+ ions bombard the surface of the ITO target (the target material composition ratio of this layer is: In2O3:SnO2=92:8wt%), and nano-scale ITO material is deposited on the surface of the 31 layer. After the accumulation of deposition time, the thickness is controlled to be 15nm;

[0056] In this way, the corresponding transparent conductive film has been manufactured.

[0057] Product performance:

[0058] Adhesion: 100 / 100 (no falling off after 100-grid test)

[0059] Surface resistance: 2.3 ohms / square

[0060] Visible light transmittance: 83.5%

[0061] High temperature and high humidity test: 500Hrs, 80℃, 80RH%, resistance value change rate <1%;

[0062] Comparison case product 2

[0063] Glass / SiO2(20nm) / ITO(500nm) high temperature process

[0064] Product performance:

[0065] Adhesion: 100 / 100 (no falling off after 100-grid test)

[0066] Surface resistance: 2.5 ohms / square

[0067] Visible light transmittance: 76.0%

[0068] High temperature and high humidity test: 500Hrs, 80℃, 80RH%, resistance value change rate <5%.

[0069] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A high-transmittance and low-resistance conductive glass, characterized in that: Serial number: 20 layers, first, a layer of SiO2 is deposited as a bonding layer on a glass substrate by vacuum magnetron sputtering; When depositing SiO2, Ar and O2 are used as working gases. Voltage is applied to discharge Ar and O2. + Ions and O + Ions bombard the surface of the Si target, and SiO2 nanogroups are deposited on the glass substrate. After the accumulation of deposition time, the thickness is controlled to be 5-10nm; No.: 21st layer: A layer of Cu-W-Ni alloy is deposited on the surface of the 20th layer by magnetron sputtering. Ar is used as the working gas. A voltage is applied to discharge Ar. + Ions bombard the surface of the Cu-W-Ni alloy target, and Cu-W-Ni alloy nanogroups are deposited on the surface of the 20 layers. After the accumulation of deposition time, the thickness is controlled to be 10-20nm; No.: 30th layer: A layer of pure Cu is deposited on the surface of the 21st layer by magnetron sputtering. Ar is used as the working gas. A voltage is applied to discharge Ar. + Ions bombard the Cu target surface, and Cu nanogroups are deposited on the surface of the 21 layer. After the accumulation of deposition time, the thickness is controlled to be 200-500nm; No.: 31 layer: A layer of Cu-W-Ni alloy is deposited on the surface of the 30 layer by magnetron sputtering. Ar is used as the working gas. A voltage is applied to discharge Ar. + Ions bombard the surface of the Cu-W-Ni alloy target, and Cu-W-Ni alloy nanogroups are deposited on the surface of the 30 layers. After the accumulation of deposition time, the thickness is controlled to be 10-20nm; After the 31 layers of coating are completed, grid etching is performed to leave the Cu grid lines and the adhesive layer of the overall surface, thus obtaining a new 21-31 grid + 20 overall composite layer of 32 layers; No.: 40th layer: A layer of ITO film is deposited on the surface of the 32nd layer by magnetron sputtering. Ar and O2 are used as working gases. Voltage is applied to discharge Ar and O2. Ar + Ions and O + Ions bombard the surface of the ITO target, the composition ratio of the ITO target is: In2O3:SnO2=93:7wt%-90:10wt%, and the ITO nanogroups are deposited on the surface of the 32 layers. After the accumulation of deposition time, the thickness is controlled to be 10-20nm.