Multiband pulse wave filter based on capacitive nonlinear circuit

Abstract

The invention relates to a multiband pulse wave filter based on a capacitive nonlinear circuit. According to the technical scheme, the multi-band pulse wave filter comprises a dual-band pulse wave filter, a three-band pulse wave filter and a four-band pulse wave filter; the dual-band, three-band and four-band pulse wave filters are correspondingly provided with two resonance units, three resonance units and four resonance units; each resonance unit has the same structure and is composed of a metal plate (7), a dielectric substrate (8) and a circuit module (9); the front surface of the dielectric substrate (8) is tightly attached to the rear surface of the metal plate (7), the circuit modules (9) are arranged in cross-shaped strip-shaped holes of the metal plate (7), and each circuit module (9) is composed of a full-wave rectification circuit, a rectification capacitor C, a rectification resistor R and a shunt capacitor Cpi. The filter is simple in structure, low in cost, capable of achieving low transmission of pulse waves and strong transmission of continuous waves at the same time, capable of achieving the pulse wave filtering effect in multiple frequency bands, and good in filtering effect. The method is suitable for the fields of communication, radars, antennas and the like.

Description

Technical Field

[0001] The present invention belongs to the technical field of multi-band pulse wave filters, and specifically relates to a multi-band pulse wave filter based on a capacitive nonlinear circuit. Background Art

[0002] In wireless communication and radar systems, the design and application of filters are of great significance. Filters based on capacitive nonlinear circuits can control electromagnetic waves more accurately due to their high flexibility and adjustability. Compared with single-band filters that can selectively filter electromagnetic wave signals according to different incident waveforms (pulse widths), multi-band filters based on capacitive nonlinear circuits can achieve accurate selective filtering of electromagnetic wave signals with different waveforms at multiple frequencies. Therefore, multi-band filters based on capacitive nonlinear circuits are a technology with broad application prospects, which has attracted the attention of technicians in this field.

[0003] Wakatsuchi H (Wakatsuchi H, Long J, Sievenpiper D F. Waveform selective surfaces [J]. Advanced Functional Materials, 2019, 29 (11): 1806386.) proposed a single-band filter loaded with a nonlinear circuit from the perspective of waveform selection. Its structure is a double-layer structure, with the upper layer being a metal plate and the lower layer being a dielectric substrate. A single-band waveform selection effect is achieved by opening a strip hole in the upper metal plate and loading a circuit in which a capacitor and a resistor are connected in parallel and a diode bridge in the strip hole. Its transmittance for continuous waves reaches 85%, while its transmittance for pulse waves is less than 10%. The metasurface filter proposed in the article has the advantages of simple structure and excellent filtering effect at a single frequency point, but its defect is that it only achieves the filtering effect at a single frequency point and does not consider the multi-band situation.

[0004] Hiroki Takeshita (Takeshita H, Nita D, Wakatsuchi H. Multi-band waveform-selective metasurfaces and their application [C] / / 2021 XXXIVth General Assembly and Scientific Symposium of the International Union of Radio Science (URSIGASS). IEEE, 2021: 1-4.) believes that waveform-selective metasurfaces can work in multiple frequency bands. The strip hole structure based on the inductive nonlinear circuit designed by him can achieve waveform selection effects in dual-band and quad-band through arrangement and combination, and can achieve high transmittance of pulse waves in multiple frequency bands while suppressing the transmission of continuous waves. This conclusion has been confirmed by testing actual samples. However, the multi-band continuous wave filter based on the inductive nonlinear circuit designed in the article has the problem of low pulse wave transmittance in the quad-band. The transmittance of pulse waves in the quad-band is only about 40%, which cannot achieve a good filtering effect.

[0005] Min X et al. (Min X, Wang Y, Du Z, et al. Design of a Dual-band Waveform Selective Surface [C] / / 2022 International Applied) added a parallel capacitor to the capacitive nonlinear circuit module to change the resonant frequency. The resonant frequency was changed by changing the unit surface structure, and the resonant units with different operating frequencies were combined to achieve the effect of multi-band filtering. The single-band filter is a single-slit structure, and the transmittance of continuous waves can reach 80%, while the transmittance of pulse waves is less than 15%. The dual-band filter is composed of a strip hole resonant unit and an "I" shaped resonant unit. Nonlinear circuits are loaded in the slits respectively, and the transmittance of continuous waves reaches 70%, while the transmittance of pulse waves is less than 30%. The dual-band waveform selection metasurface proposed in the article achieves the dual-band waveform selection effect by combining resonant units of different structures. Compared with the research on multi-band pulse wave filters based on nonlinear circuits in other articles, the transmittance of continuous waves is greatly improved, and the transmittance of pulse waves is also suppressed to a certain extent. However, the defect is that there is still room for optimization of the transmittance of continuous waves. The transmittance of continuous waves in the high frequency band does not reach 80%, and a good filtering effect is not achieved. In addition, the article did not continue to study three-band and four-band pulse filters based on this result, and it is relatively complicated to achieve more band waveform selection effects only by changing the structure.

[0006] Takimoto K (Takimoto K, Takeshita H, Fathnan AA, et al. Perfect pulse filtering under simultaneous incidence at the same frequencies with waveform-selective metasurfaces[J]. APL Materials, 2023, 11(8).) added delay lines and continuous interference elimination elements to the multi-band filter based on nonlinear circuits to achieve multi-band perfect continuous wave filtering effect. The principle that the electromotive force of the inductive element will not disappear in the initial short time period is used. The resonant unit based on the inductive nonlinear circuit is used to strongly transmit short pulse waveforms and continuous wave waveforms during the initial time period. The resonant unit based on the capacitive nonlinear circuit can selectively extract the continuous wave waveform, and then the circuit composed of the delay line and the continuous interference elimination element is used to subtract the continuous wave waveform from the mixed wave waveform, which can realize the extraction of pulse waves with specific pulse widths from multiple incident waves, thereby achieving an ideal filtering effect. However, the designed multi-band filter based on nonlinear circuits requires a combination of two resonant units to achieve single-band filtering, and a combination of four resonant units to achieve dual-band filtering. In addition, every two resonant units need to be connected to a circuit consisting of a delay line and a continuous interference elimination element, which has a complex structure and high cost. Summary of the invention

[0007] The present invention aims to overcome the defects of the prior art and aims to provide a multi-band pulse wave filter based on a capacitive nonlinear circuit which has a simple structure, low cost, can achieve strong filtering of pulse waves and strong transmission of continuous waves, can filter multi-band pulse waves and has good filtering effect.

[0008] To achieve the above object, the technical solution adopted by the present invention is: the multi-band pulse wave filter based on capacitive nonlinear circuit includes the following three types:

[0009] Dual-band pulse wave filter based on capacitive nonlinear circuit;

[0010] A three-band pulse wave filter based on a capacitive nonlinear circuit;

[0011] Four-band pulse wave filter based on capacitive nonlinear circuit.

[0012] The dual-band pulse wave filter based on the capacitive nonlinear circuit is composed of a first resonant unit and a second resonant unit connected to form a rectangular parallelepiped, the lower side of the first resonant unit is connected to the upper side of the second resonant unit; the first resonant unit is flush with the left side of the second resonant unit, and the first resonant unit is flush with the front plane of the second resonant unit.

[0013] The three-band pulse wave filter based on the capacitive nonlinear circuit is composed of a first resonant unit, a second resonant unit and a third resonant unit connected into a rectangular parallelepiped, the lower side of the first resonant unit is connected to the upper side of the second resonant unit, and the lower side of the second resonant unit is connected to the upper side of the third resonant unit; the left side surfaces of the first resonant unit, the second resonant unit and the third resonant unit are flush, and the front planes of the first resonant unit, the second resonant unit and the third resonant unit are flush.

[0014] The four-band pulse wave filter based on the capacitive nonlinear circuit is connected into a cube by the first resonant unit, the fourth resonant unit, the fifth resonant unit and the sixth resonant unit; the lower side of the first resonant unit is connected to the upper side of the sixth resonant unit, the lower side of the fourth resonant unit is connected to the upper side of the fifth resonant unit, the left side of the fourth resonant unit is connected to the right side of the first resonant unit, and the left side of the fifth resonant unit is connected to the right side of the sixth resonant unit; the upper side of the fourth resonant unit is flush with the upper side of the first resonant unit, and the right side of the fourth resonant unit is flush with the right side of the fifth resonant unit; the front planes of the first resonant unit, the fourth resonant unit, the fifth resonant unit and the sixth resonant unit are flush.

[0015] The first resonance unit, the second resonance unit, the third resonance unit, the fourth resonance unit, the fourth resonance unit, the fifth resonance unit and the sixth resonance unit have the same structure, and are all composed of a metal plate, a dielectric substrate and a circuit module.

[0016] The front surface of the dielectric substrate is closely attached to the rear surface of the metal plate, and the metal plate and the dielectric substrate are both square flat plates with a side length L of 24 to 36 mm.

[0017] The metal plate is a square flat plate made of metal material with a "cross" shaped strip hole, and the "cross" shaped strip hole is composed of mutually perpendicular horizontal strip holes and vertical strip holes, and the center line of the horizontal strip hole and the center line of the vertical strip hole coincide with the median perpendicular line of the vertical side and the median perpendicular line of the horizontal side corresponding to the metal plate respectively.

[0018] The upper wall and lower wall of the horizontal strip hole wall adjacent to the left side of the vertical strip hole are correspondingly called the upper left wall of the horizontal strip hole and the lower left wall of the horizontal strip hole, and the upper wall of the horizontal strip hole wall adjacent to the right side of the vertical strip hole and the lower wall of the horizontal strip hole are correspondingly called the upper right wall and the lower right wall of the horizontal strip hole.

[0019] A circuit module is arranged at the center of the "cross"-shaped strip hole of the metal plate; the circuit module is composed of a full-wave rectifier circuit, a rectifier capacitor C, a rectifier resistor R and a parallel capacitor Cpi.

[0020] The structure of the full-wave rectifier circuit is: the anode of the first Schottky diode is connected to the upper left wall of the horizontal strip hole, the anode of the second Schottky diode is connected to the lower left wall of the horizontal strip hole, the cathode of the third Schottky diode is connected to the upper right wall of the horizontal strip hole, and the cathode of the fourth Schottky diode is connected to the lower right wall of the horizontal strip hole; the cathode of the first Schottky diode is connected to the cathode of the second Schottky diode, and the anode of the third Schottky diode is connected to the anode of the fourth Schottky diode.

[0021] One end of the rectifier capacitor C is connected to the cathode of the first Schottky diode, and the other end of the rectifier capacitor C is connected to the anode of the third Schottky diode; one end of the rectifier resistor R is connected to the cathode of the second Schottky diode, and the other end of the rectifier resistor R is connected to the anode of the fourth Schottky diode.

[0022] The parallel capacitor Cpi is set on the right side of the third Schottky diode and the fourth Schottky diode, and the parallel capacitor Cp i One end is connected to the upper right wall of the horizontal strip hole, and the other end of the parallel capacitor Cpi is connected to the lower right wall of the horizontal strip hole.

[0023] Cpi represents the parallel capacitance set in the i-th resonance unit, i is a natural number from 1 to 6; specifically:

[0024] Cp1 represents the parallel capacitance set by the first resonance unit, Cp1 = 0.05-0.3pF;

[0025] Cp2 represents the parallel capacitance of the second resonance unit, Cp2 = 0.4-1.8 pF;

[0026] Cp3 represents the parallel capacitance set by the third resonance unit, Cp3 = 1.9 ~ 2.5pF;

[0027] Cp4 represents the parallel capacitance provided by the fourth resonance unit, Cp4=0.1-0.8pF;

[0028] Cp5 represents the parallel capacitance provided by the fifth resonance unit, Cp5=1.8-2.5pF;

[0029] Cp6 represents the parallel capacitance provided by the sixth resonance unit, Cp6=0.9-1.5 pF.

[0030] The thickness of the metal plate is t2 = 0.016-0.020 mm; the material of the metal plate is one of copper, aluminum and silver.

[0031] The thickness t1 of the dielectric substrate is 0.5-5 mm; the dielectric substrate is an insulating material, and the relative dielectric constant of the insulating material is 1.0-10.0.

[0032] The length l of the horizontal strip hole is equal to that of the vertical strip hole; l=0.85-0.95L, where L represents the side length of the metal plate and the dielectric substrate, in units of mm.

[0033] The width b of the horizontal strip holes is equal to that of the vertical strip holes; b=5-10 mm.

[0034] The rectifier resistor R=10-500 kΩ.

[0035] The rectifier capacitor C=0.1-100nF.

[0036] The first Schottky diode, the second Schottky diode, the third Schottky diode and the fourth Schottky diode are of the same model, all of which are HSMS-286x series.

[0037] Due to the adoption of the above technical solution, the present invention has the following positive effects compared with the prior art:

[0038] (1) The basic structure of the multi-band pulse wave filter based on capacitive nonlinear circuit prepared by the present invention is composed of 2 to 4 resonant units, each of which is composed of a metal plate and a dielectric substrate. A circuit module is provided in the middle of the cross-shaped strip hole of the metal plate. The structure is simple, the cost is low, no power supply or external voltage control is required, it can be used independently, and the applicability is strong.

[0039] (2) The present invention adopts a method of connecting a full-wave rectifier circuit in parallel with a capacitor Cpi inside the resonant unit, thereby increasing the equivalent capacitance of the multi-band pulse wave filter designed based on a capacitive nonlinear circuit, and shifting the operating frequency as a whole to the low-frequency side, thereby achieving adjustable operating frequency of the pulse wave filter, and combining multiple resonant units operating at different frequencies together to achieve a multi-band pulse wave filtering effect, with low transmittance to pulse waves in multiple operating frequency bands and high transmittance to continuous waves.

[0040] (3) Through the filter structure and full-wave rectifier circuit adopted in the present invention, after the electromagnetic wave is incident, an induced current will be generated on the metal plate. The diode bridge in the circuit module fully rectifies the input waveform and converts most of the incident energy wave into a zero-frequency component. When a short pulse signal is incident on the multi-band pulse filter, the short pulse signal generates an induced current on the metal plate, which is then rectified by the diode bridge. The current flows into the parallel circuit composed of the rectifier capacitor C and the rectifier resistor R in the circuit module. By utilizing the characteristics of the capacitor, the charge is first stored in the rectifier capacitor C, and then the incident pulse wave electromagnetic energy is converted into heat energy for absorption and release through the parallel rectifier resistor R, thereby achieving a low transmittance of the pulse wave. After the continuous wave fully charges the rectifier capacitor C, the inherent resonance mechanism of the cross-shaped strip hole structure is maintained to transmit strongly, thereby achieving a multi-band pulse wave filtering effect while protecting the circuit components, and also protecting the electronic components from electromagnetic interference and electromagnetic radiation.

[0041] The present invention generates a plurality of different resonance points by connecting capacitors Cpi of different capacitance values ​​in parallel in the circuit module of each resonance unit, thereby achieving a multi-band filtering effect. The continuous wave transmittance of the dual-band pulse wave filter is higher than 85%, and the pulse wave transmittance is lower than 25%. The continuous wave transmittance of the three-band pulse wave filter is higher than 85%, and the pulse wave transmittance is lower than 20%. The continuous wave transmittance of the four-band pulse wave filter is higher than 85%, and the pulse wave transmittance is lower than 15%.

[0042] Therefore, the present invention has a simple structure, low cost, can achieve low transmission of pulse waves and strong transmission of continuous waves, can achieve pulse wave filtering effect in multiple frequency bands, and has good filtering effect. The present invention is applicable to the fields of communication, radar, antenna, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 It is a structural schematic diagram of a dual-band pulse wave filter based on a capacitive nonlinear circuit of the present invention;

[0044] Figure 2 It is a structural schematic diagram of a three-band pulse wave filter based on a capacitive nonlinear circuit of the present invention;

[0045] Figure 3 It is a structural schematic diagram of a four-band pulse wave filter based on a capacitive nonlinear circuit of the present invention;

[0046] Figure 4 for Figure 1 to Figure 3 An enlarged schematic diagram of the structure of the first resonance unit 1 to the sixth resonance unit 6;

[0047] Figure 5 for Figure 4 Schematic diagram of top view;

[0048] Figure 6 This is a diagram showing the transmittance simulation results of the dual-band pulse wave filter based on a capacitive nonlinear circuit of the present invention;

[0049] Figure 7 This is a diagram showing the transmittance simulation results of a three-band pulse wave filter based on a capacitive nonlinear circuit according to the present invention;

[0050] Figure 8 This is a diagram of the transmittance simulation results of the four-band pulse wave filter based on the capacitive nonlinear circuit of the present invention. DETAILED DESCRIPTION

[0051] The technical solution of the present invention is further described below in conjunction with the accompanying drawings and specific embodiments, but is not intended to limit the scope of protection thereof:

[0052] A multi-band pulse wave filter based on a capacitive nonlinear circuit. The multi-band pulse wave filter based on a capacitive nonlinear circuit described in this specific embodiment includes the following three types:

[0053] Dual-band pulse wave filter based on capacitive nonlinear circuit;

[0054] A three-band pulse wave filter based on a capacitive nonlinear circuit;

[0055] Four-band pulse wave filter based on capacitive nonlinear circuit.

[0056] like Figure 1 As shown, the dual-band pulse wave filter based on the capacitive nonlinear circuit is composed of a first resonance unit 1 and a second resonance unit 2 connected into a rectangular parallelepiped, and the lower side of the first resonance unit 1 is connected to the upper side of the second resonance unit 2; the first resonance unit 1 is flush with the left side of the second resonance unit 2, and the first resonance unit 1 is flush with the front plane of the second resonance unit 2.

[0057] like Figure 2 As shown, the three-band pulse wave filter based on the capacitive nonlinear circuit is composed of a first resonance unit 1, a second resonance unit 2 and a third resonance unit 3 connected into a rectangular parallelepiped, the lower side of the first resonance unit 1 is connected to the upper side of the second resonance unit 2, and the lower side of the second resonance unit 2 is connected to the upper side of the third resonance unit 3; the left side surfaces of the first resonance unit 1, the second resonance unit 2 and the third resonance unit 3 are flush, and the front planes of the first resonance unit 1, the second resonance unit 2 and the third resonance unit 3 are flush.

[0058] like Figure 3As shown, the four-band pulse wave filter based on the capacitive nonlinear circuit is composed of a first resonance unit 1, a fourth resonance unit 4, a fifth resonance unit 5 and a sixth resonance unit 6 connected into a cube; the lower side surface of the first resonance unit 1 is connected to the upper side surface of the sixth resonance unit 6, the lower side surface of the fourth resonance unit 4 is connected to the upper side surface of the fifth resonance unit 5, the left side surface of the fourth resonance unit 4 is connected to the right side surface of the first resonance unit 1, and the left side surface of the fifth resonance unit 5 is connected to the right side surface of the sixth resonance unit 6; the upper side surface of the fourth resonance unit 4 is flush with the upper side surface of the first resonance unit 1, and the right side surface of the fourth resonance unit 4 is flush with the right side surface of the fifth resonance unit 5; the front planes of the first resonance unit 1, the fourth resonance unit 4, the fifth resonance unit 5 and the sixth resonance unit 6 are flush.

[0059] like Figure 4 , Figure 5 As shown, the first resonance unit 1, the second resonance unit 2, the third resonance unit 3, the fourth resonance unit 4, the fourth resonance unit 4, the fifth resonance unit 5 and the sixth resonance unit 6 have the same structure, and are all composed of a metal plate 7, a dielectric substrate 8 and a circuit module 9.

[0060] The front surface of the dielectric substrate 8 is closely attached to the rear surface of the metal plate 7 , and the metal plate 7 and the dielectric substrate 8 are both square flat plates with a side length L of 24 to 36 mm.

[0061] like Figure 4 As shown, the metal plate 7 is a square flat plate made of metal material with a "cross" shaped strip hole, and the "cross" shaped strip hole is composed of horizontal strip holes and vertical strip holes that are perpendicular to each other, and the center line of the horizontal strip hole and the center line of the vertical strip hole coincide with the median perpendicular line of the vertical side and the median perpendicular line of the horizontal side corresponding to the metal plate 7 respectively.

[0062] The upper wall and lower wall of the horizontal strip hole wall adjacent to the left side of the vertical strip hole are correspondingly called the upper left wall of the horizontal strip hole and the lower left wall of the horizontal strip hole, and the upper wall of the horizontal strip hole wall adjacent to the right side of the vertical strip hole and the lower wall of the horizontal strip hole are correspondingly called the upper right wall and the lower right wall of the horizontal strip hole.

[0063] like Figure 4 As shown, a circuit module 9 is arranged at the center of the "cross"-shaped strip hole of the metal plate 7; the circuit module 9 is composed of a full-wave rectifier circuit, a rectifier capacitor C, a rectifier resistor R and a parallel capacitor Cpi.

[0064] like Figure 4As shown, the structure of the full-wave rectifier circuit is: the anode of the first Schottky diode is connected to the upper left wall of the horizontal strip hole, the anode of the second Schottky diode is connected to the lower left wall of the horizontal strip hole, the cathode of the third Schottky diode is connected to the upper right wall of the horizontal strip hole, and the cathode of the fourth Schottky diode is connected to the lower right wall of the horizontal strip hole; the cathode of the first Schottky diode is connected to the cathode of the second Schottky diode, and the anode of the third Schottky diode is connected to the anode of the fourth Schottky diode.

[0065] like Figure 4 As shown, one end of the rectifier capacitor C is connected to the cathode of the first Schottky diode, and the other end of the rectifier capacitor C is connected to the anode of the third Schottky diode; one end of the rectifier resistor R is connected to the cathode of the second Schottky diode, and the other end of the rectifier resistor R is connected to the anode of the fourth Schottky diode.

[0066] like Figure 4 As shown, the parallel capacitor Cpi is set on the right side of the third Schottky diode and the fourth Schottky diode, and the parallel capacitor Cp i One end is connected to the upper right wall of the horizontal strip hole, and the other end of the parallel capacitor Cpi is connected to the lower right wall of the horizontal strip hole.

[0067] Cpi represents the parallel capacitance set in the i-th resonance unit, i is a natural number from 1 to 6; specifically:

[0068] Cp1 represents the parallel capacitance set by the first resonance unit, Cp1 = 0.05-0.3pF;

[0069] Cp2 represents the parallel capacitance of the second resonance unit, Cp2 = 0.4-1.8 pF;

[0070] Cp3 represents the parallel capacitance set by the third resonance unit, Cp3 = 1.9 ~ 2.5pF;

[0071] Cp4 represents the parallel capacitance provided by the fourth resonance unit, Cp4=0.1-0.8pF;

[0072] Cp5 represents the parallel capacitance provided by the fifth resonance unit, Cp5=1.8-2.5pF;

[0073] Cp6 represents the parallel capacitance provided by the sixth resonance unit, Cp6=0.9-1.5 pF.

[0074] The thickness t2 of the metal plate 7 is 0.016-0.020 mm; the material of the metal plate 7 is one of copper, aluminum and silver.

[0075] The thickness t1 of the dielectric substrate 8 is 0.5-5 mm. The dielectric substrate 8 is an insulating material, and the relative dielectric constant of the insulating material is 1.0-10.0.

[0076] The length l of the horizontal strip hole is equal to that of the vertical strip hole; l=0.85-0.95L, where L represents the side length of the metal plate 7 and the dielectric substrate 8, in mm.

[0077] The width b of the horizontal strip holes is equal to that of the vertical strip holes; b=5-10 mm.

[0078] The rectifier resistor R=10-500 kΩ.

[0079] The rectifier capacitor C=0.1-100nF.

[0080] In this specific implementation mode:

[0081] The first Schottky diode, the second Schottky diode, the third Schottky diode and the fourth Schottky diode are of the same model, all of which are HSMS-286x series.

[0082] This will not be described in detail in the embodiments.

[0083] Example 1

[0084] A multi-band pulse wave filter based on a capacitive nonlinear circuit. The multi-band pulse wave filter based on a capacitive nonlinear circuit described in this embodiment is a dual-band pulse wave filter based on a capacitive nonlinear circuit.

[0085] The structure of the dual-band pulse wave filter based on capacitive nonlinear circuit is as follows: Figure 1 As shown, the first resonance unit 1 and the second resonance unit 2 are connected to form a rectangular parallelepiped, and the lower side of the first resonance unit 1 is connected to the upper side of the second resonance unit 2; the left side of the first resonance unit 1 is flush with the second resonance unit 2, and the front planes of the first resonance unit 1 and the second resonance unit 2 are flush.

[0086] like Figure 4 , Figure 5 As shown, the first resonance unit 1 and the second resonance unit 2 have the same structure, and are both composed of a metal plate 7, a dielectric substrate 8 and a circuit module 9; the front surface of the dielectric substrate 8 is closely attached to the rear surface of the metal plate 7, and the shapes of the metal plate 7 and the dielectric substrate 8 are both square flat plates with a side length L=24 mm.

[0087] like Figure 4As shown, the metal plate 7 is a square flat plate made of metal material with a "cross" shaped strip hole, and the "cross" shaped strip hole is composed of horizontal strip holes and vertical strip holes that are perpendicular to each other, and the center line of the horizontal strip hole and the center line of the vertical strip hole coincide with the median perpendicular line of the vertical side and the median perpendicular line of the horizontal side corresponding to the metal plate 7 respectively.

[0088] The upper wall and lower wall of the horizontal strip hole wall adjacent to the left side of the vertical strip hole are correspondingly called the upper left wall of the horizontal strip hole and the lower left wall of the horizontal strip hole, and the upper wall of the horizontal strip hole wall adjacent to the right side of the vertical strip hole and the lower wall of the horizontal strip hole are correspondingly called the upper right wall and the lower right wall of the horizontal strip hole.

[0089] like Figure 4 As shown, a circuit module 9 is arranged at the center of the "cross"-shaped strip hole of the metal plate 7; the circuit module 9 is composed of a full-wave rectifier circuit, a rectifier capacitor C, a rectifier resistor R and a parallel capacitor Cpi.

[0090] like Figure 4 As shown, the structure of the full-wave rectifier circuit is: the anode of the first Schottky diode is connected to the upper left wall of the horizontal strip hole, the anode of the second Schottky diode is connected to the lower left wall of the horizontal strip hole, the cathode of the third Schottky diode is connected to the upper right wall of the horizontal strip hole, and the cathode of the fourth Schottky diode is connected to the lower right wall of the horizontal strip hole; the cathode of the first Schottky diode is connected to the cathode of the second Schottky diode, and the anode of the third Schottky diode is connected to the anode of the fourth Schottky diode.

[0091] like Figure 4 As shown, one end of the rectifier capacitor C is connected to the cathode of the first Schottky diode, and the other end of the rectifier capacitor C is connected to the anode of the third Schottky diode; one end of the rectifier resistor R is connected to the cathode of the second Schottky diode, and the other end of the rectifier resistor R is connected to the anode of the fourth Schottky diode.

[0092] like Figure 4 As shown, the parallel capacitor Cpi is arranged on the right side of the third Schottky diode and the fourth Schottky diode, one end of the parallel capacitor Cpi is connected to the upper right wall of the horizontal strip hole, and the other end of the parallel capacitor Cpi is connected to the lower right wall of the horizontal strip hole.

[0093] Cpi represents the parallel capacitance set in the i-th resonance unit, where i is a natural number of 1 to 2; specifically:

[0094] Cp1 represents the parallel capacitance set by the first resonance unit, Cp1 = 0.05pF;

[0095] Cp2 represents the parallel capacitance provided by the second resonance unit, Cp2=0.4pF.

[0096] The thickness t2 of the metal plate 7 is 0.016 mm; the material of the metal plate 7 is copper.

[0097] The thickness t1 of the dielectric substrate 8 is 0.5 mm. The dielectric substrate 8 is an insulating material, and the relative dielectric constant of the insulating material is 1.0.

[0098] The length l of the horizontal strip hole is equal to the length l of the vertical strip hole; l=0.85L, where L represents the side length of the metal plate 7 and the dielectric substrate 8, in mm.

[0099] The width b of the horizontal strip holes and the vertical strip holes are equal; b=5 mm.

[0100] The rectifier resistor R=10 kΩ.

[0101] The rectifier capacitor C=0.1nF.

[0102] Example 2

[0103] A multi-band pulse wave filter based on a capacitive nonlinear circuit. This embodiment is the same as Embodiment 1 except for the following technical parameters:

[0104] Cp1 represents the parallel capacitance set by the first resonance unit, Cp1 = 0.3pF;

[0105] Cp2 represents the parallel capacitance provided by the second resonance unit, Cp2=1.8 pF.

[0106] The thickness t2 of the metal plate 7 is 0.020 mm; the material of the metal plate 7 is aluminum.

[0107] The thickness t1 of the dielectric substrate 8 is 5 mm. The dielectric substrate 8 is an insulating material, and the relative dielectric constant of the insulating material is 10.0.

[0108] The metal plate 7 and the dielectric substrate 8 are both square flat plates with a side length of L=36 mm.

[0109] The length l of the horizontal strip hole is equal to that of the vertical strip hole; l=0.95L, where L represents the side length of the metal plate 7 and the dielectric substrate 8, in mm.

[0110] The width b of the horizontal strip holes and the vertical strip holes are equal; b=10 mm.

[0111] The rectifier resistor R=500 kΩ.

[0112] The rectifier capacitor C=100nF.

[0113] Example 3

[0114] A multi-band pulse wave filter based on a capacitive nonlinear circuit. This embodiment is the same as Embodiment 1 except for the following technical parameters:

[0115] Cp1 represents the parallel capacitance set by the first resonance unit, Cp1 = 0.1pF;

[0116] Cp2 represents the parallel capacitance provided by the second resonance unit, Cp2=0.6pF.

[0117] The thickness t2 of the metal plate 7 is 0.017 mm; the material of the metal plate 7 is silver.

[0118] The thickness t1 of the dielectric substrate 8 is 3.5 mm. The dielectric substrate 8 is an insulating material, and the relative dielectric constant of the insulating material is 3.0.

[0119] The metal plate 7 and the dielectric substrate 8 are both square flat plates with a side length L=32 mm.

[0120] The length l of the horizontal strip hole is equal to that of the vertical strip hole; l=0.94L, where L represents the side length of the metal plate 7 and the dielectric substrate 8, in mm.

[0121] The width b of the horizontal strip holes and the vertical strip holes are equal; b=8 mm.

[0122] The rectifier resistor R=300 kΩ.

[0123] The rectifier capacitor C=1nF.

[0124] The dual-band pulse wave filter based on capacitive nonlinear circuit prepared in Example 3 was simulated by commercial electromagnetic simulation software ANSYS Electronics Desktop, and the following results were obtained: Figure 6 The transmittance simulation results of the dual-band pulse wave filter based on capacitive nonlinear circuit are shown. Figure 6 In the figure: the horizontal axis represents the frequency; the vertical axis represents the percentage of the transmitted electromagnetic wave energy to the total incident energy (i.e. transmittance). Figure 6 It can be seen that under the two working frequency conditions of 1.8GHz and 2.8GHz, the transmittance of the filter to continuous waves is higher than 85%, and the transmittance to 50ns short pulse waves is lower than 25%. Compared with the prior art, this embodiment achieves a dual-band waveform selection effect, ensuring high transmittance to continuous waves and low transmittance to 50ns pulse waves.

[0125] Example 4

[0126] A multi-band pulse wave filter based on a capacitive nonlinear circuit. The multi-band pulse wave filter based on a capacitive nonlinear circuit described in this embodiment is a three-band pulse wave filter based on a capacitive nonlinear circuit.

[0127] like Figure 2 As shown, the three-band pulse wave filter based on the capacitive nonlinear circuit is composed of a first resonance unit 1, a second resonance unit 2 and a third resonance unit 3 connected into a rectangular parallelepiped, the lower side of the first resonance unit 1 is connected to the upper side of the second resonance unit 2, and the lower side of the second resonance unit 2 is connected to the upper side of the third resonance unit 3; the left side surfaces of the first resonance unit 1, the second resonance unit 2 and the third resonance unit 3 are flush, and the front planes of the first resonance unit 1, the second resonance unit 2 and the third resonance unit 3 are flush.

[0128] like Figure 4 , Figure 5 As shown, the first resonance unit 1 , the second resonance unit 2 and the third resonance unit 3 have the same structure, and are all composed of a metal plate 7 , a dielectric substrate 8 and a circuit module 9 .

[0129] The front surface of the dielectric substrate 8 is in close contact with the rear surface of the metal plate 7 , and the metal plate 7 and the dielectric substrate 8 are both square flat plates with a side length of L=24 mm.

[0130] like Figure 4 As shown, the metal plate 7 is a square flat plate made of metal material with a "cross" shaped strip hole, and the "cross" shaped strip hole is composed of horizontal strip holes and vertical strip holes that are perpendicular to each other, and the center line of the horizontal strip hole and the center line of the vertical strip hole coincide with the median perpendicular line of the vertical side and the median perpendicular line of the horizontal side corresponding to the metal plate 7 respectively.

[0131] The upper wall and lower wall of the horizontal strip hole wall adjacent to the left side of the vertical strip hole are correspondingly called the upper left wall of the horizontal strip hole and the lower left wall of the horizontal strip hole, and the upper wall of the horizontal strip hole wall adjacent to the right side of the vertical strip hole and the lower wall of the horizontal strip hole are correspondingly called the upper right wall and the lower right wall of the horizontal strip hole.

[0132] like Figure 4 As shown, a circuit module 9 is arranged at the center of the "cross"-shaped strip hole of the metal plate 7; the circuit module 9 is composed of a full-wave rectifier circuit, a rectifier capacitor C, a rectifier resistor R and a parallel capacitor Cpi.

[0133] like Figure 4As shown, the structure of the full-wave rectifier circuit is: the anode of the first Schottky diode is connected to the upper left wall of the horizontal strip hole, the anode of the second Schottky diode is connected to the lower left wall of the horizontal strip hole, the cathode of the third Schottky diode is connected to the upper right wall of the horizontal strip hole, and the cathode of the fourth Schottky diode is connected to the lower right wall of the horizontal strip hole; the cathode of the first Schottky diode is connected to the cathode of the second Schottky diode, and the anode of the third Schottky diode is connected to the anode of the fourth Schottky diode.

[0134] like Figure 4 As shown, one end of the rectifier capacitor C is connected to the cathode of the first Schottky diode, and the other end of the rectifier capacitor C is connected to the anode of the third Schottky diode; one end of the rectifier resistor R is connected to the cathode of the second Schottky diode, and the other end of the rectifier resistor R is connected to the anode of the fourth Schottky diode.

[0135] like Figure 4 As shown, the parallel capacitor Cpi is set on the right side of the third Schottky diode and the fourth Schottky diode, and the parallel capacitor Cp i One end is connected to the upper right wall of the horizontal strip hole, and the other end of the parallel capacitor Cpi is connected to the lower right wall of the horizontal strip hole.

[0136] Cpi represents the parallel capacitance set in the i-th resonance unit, i is a natural number from 1 to 3; specifically:

[0137] Cp1 represents the parallel capacitance set by the first resonance unit, Cp1 = 0.05pF;

[0138] Cp2 represents the parallel capacitance set by the second resonance unit, Cp2 = 0.4pF;

[0139] Cp3 represents the parallel capacitance provided by the third resonance unit, Cp3 = 1.9 pF.

[0140] The thickness t2 of the metal plate 7 is 0.016 mm; the material of the metal plate 7 is copper.

[0141] The thickness t1 of the dielectric substrate 8 is 0.5 mm. The dielectric substrate 8 is an insulating material, and the relative dielectric constant of the insulating material is 1.0.

[0142] The length l of the horizontal strip hole is equal to the length l of the vertical strip hole; l=0.85L, where L represents the side length of the metal plate 7 and the dielectric substrate 8, in mm.

[0143] The width b of the horizontal strip holes and the vertical strip holes are equal; b=5 mm.

[0144] The rectifier resistor R=10 kΩ.

[0145] The rectifier capacitor C=0.1nF.

[0146] Example 5

[0147] A multi-band pulse wave filter based on a capacitive nonlinear circuit. This embodiment is the same as Embodiment 4 except for the following technical parameters:

[0148] Cp1 represents the parallel capacitance set by the first resonance unit, Cp1 = 0.3pF;

[0149] Cp2 represents the parallel capacitance of the second resonance unit, Cp2 = 1.8 pF;

[0150] Cp3 represents the parallel capacitance provided by the third resonance unit, Cp3 = 2.5 pF.

[0151] The thickness t2 of the metal plate 7 is 0.020 mm; the material of the metal plate 7 is aluminum.

[0152] The thickness t1 of the dielectric substrate 8 is 5 mm. The dielectric substrate 8 is an insulating material, and the relative dielectric constant of the insulating material is 10.0.

[0153] The metal plate 7 and the dielectric substrate 8 are both square flat plates with a side length of L=36 mm.

[0154] The length l of the horizontal strip hole is equal to that of the vertical strip hole; l=0.95L, where L represents the side length of the metal plate 7 and the dielectric substrate 8, in mm.

[0155] The width b of the horizontal strip holes is equal to the width b of the vertical strip holes; b=10 mm.

[0156] The rectifier resistor R=500 kΩ.

[0157] The rectifier capacitor C=100nF.

[0158] Example 6

[0159] A multi-band pulse wave filter based on a capacitive nonlinear circuit. This embodiment is the same as Embodiment 4 except for the following technical parameters:

[0160] Cp1 represents the parallel capacitance set by the first resonance unit, Cp1 = 0.2pF;

[0161] Cp2 represents the parallel capacitance of the second resonance unit, Cp2 = 0.7 pF;

[0162] Cp3 represents the parallel capacitance provided by the third resonance unit, Cp3 = 2.0 pF.

[0163] The thickness t2 of the metal plate 7 is 0.018 mm; the material of the metal plate 7 is silver.

[0164] The thickness t1 of the dielectric substrate 8 is 2.5 mm. The dielectric substrate 8 is an insulating material, and the relative dielectric constant of the insulating material is 3.0.

[0165] The metal plate 7 and the dielectric substrate 8 are both square flat plates with a side length of L=30 mm.

[0166] The length l of the horizontal strip hole is equal to that of the vertical strip hole; l=0.94L, where L represents the side length of the metal plate 7 and the dielectric substrate 8, in mm.

[0167] The width b of the horizontal strip holes and the vertical strip holes are equal; b=7 mm.

[0168] The rectifier resistor R=200 kΩ.

[0169] The rectifier capacitor C=10nF.

[0170] The three-band pulse wave filter based on capacitive nonlinear circuit prepared in Example 6 was simulated by commercial electromagnetic simulation software ANSYS Electronics Desktop, and the following results were obtained: Figure 7 The transmittance simulation results of a three-band pulse wave filter based on a capacitive nonlinear circuit are shown. Figure 7 Middle: The horizontal axis represents the frequency, and the vertical axis represents the percentage of the transmitted electromagnetic wave energy to the total incident energy (i.e., transmittance). Figure 7 It can be seen that: under the three operating frequency conditions of 1.1GHz, 1.9GH and 2.8GHz, the transmittance of the filter to continuous waves is higher than 85%, and the transmittance to 50ns short pulse waves is lower than 20%; compared with the prior art, this embodiment realizes the three-band waveform selection effect, ensuring high transmittance to continuous waves and low transmittance to 50ns pulse waves.

[0171] Example 7

[0172] A multi-band pulse wave filter based on a capacitive nonlinear circuit. The multi-band pulse wave filter based on a capacitive nonlinear circuit described in this embodiment is a four-band pulse wave filter based on a capacitive nonlinear circuit.

[0173] like Figure 3As shown, the four-band pulse wave filter based on the capacitive nonlinear circuit is composed of the first resonant unit 1, the fourth resonant unit 4, the fifth resonant unit 5 and the sixth resonant unit 6 connected into a cube; the lower side of the first resonant unit 1 is connected to the upper side of the sixth resonant unit 6, the lower side of the fourth resonant unit 4 is connected to the upper side of the fifth resonant unit 5, the left side of the fourth resonant unit 4 is connected to the right side of the first resonant unit 1, and the left side of the fifth resonant unit 5 is connected to the right side of the sixth resonant unit 6; the upper side of the fourth resonant unit 4 is flush with the upper side of the first resonant unit 1, and the right side of the fourth resonant unit 4 is flush with the right side of the fifth resonant unit 5; the front planes of the first resonant unit 1, the fourth resonant unit 4, the fifth resonant unit 5 and the sixth resonant unit 6 are flush.

[0174] like Figure 4 , Figure 5 As shown, the first resonance unit 1, the second resonance unit 2, the third resonance unit 3, the fourth resonance unit 4, the fourth resonance unit 4, the fifth resonance unit 5 and the sixth resonance unit 6 have the same structure, and are all composed of a metal plate 7, a dielectric substrate 8 and a circuit module 9.

[0175] The front surface of the dielectric substrate 8 is in close contact with the rear surface of the metal plate 7 , and the metal plate 7 and the dielectric substrate 8 are both square flat plates with a side length of L=24 mm.

[0176] like Figure 4 As shown, the metal plate 7 is a square flat plate made of metal material with a "cross" shaped strip hole, and the "cross" shaped strip hole is composed of horizontal strip holes and vertical strip holes that are perpendicular to each other, and the center line of the horizontal strip hole and the center line of the vertical strip hole coincide with the median perpendicular line of the vertical side and the median perpendicular line of the horizontal side corresponding to the metal plate 7 respectively.

[0177] The upper wall and lower wall of the horizontal strip hole wall adjacent to the left side of the vertical strip hole are correspondingly called the upper left wall of the horizontal strip hole and the lower left wall of the horizontal strip hole, and the upper wall of the horizontal strip hole wall adjacent to the right side of the vertical strip hole and the lower wall of the horizontal strip hole are correspondingly called the upper right wall and the lower right wall of the horizontal strip hole.

[0178] like Figure 4 As shown, a circuit module 9 is arranged at the center of the "cross"-shaped strip hole of the metal plate 7; the circuit module 9 is composed of a full-wave rectifier circuit, a rectifier capacitor C, a rectifier resistor R and a parallel capacitor Cpi.

[0179] like Figure 4As shown, the structure of the full-wave rectifier circuit is: the anode of the first Schottky diode is connected to the upper left wall of the horizontal strip hole, the anode of the second Schottky diode is connected to the lower left wall of the horizontal strip hole, the cathode of the third Schottky diode is connected to the upper right wall of the horizontal strip hole, and the cathode of the fourth Schottky diode is connected to the lower right wall of the horizontal strip hole; the cathode of the first Schottky diode is connected to the cathode of the second Schottky diode, and the anode of the third Schottky diode is connected to the anode of the fourth Schottky diode.

[0180] like Figure 4 As shown, one end of the rectifier capacitor C is connected to the cathode of the first Schottky diode, and the other end of the rectifier capacitor C is connected to the anode of the third Schottky diode; one end of the rectifier resistor R is connected to the cathode of the second Schottky diode, and the other end of the rectifier resistor R is connected to the anode of the fourth Schottky diode.

[0181] like Figure 4 As shown, the parallel capacitor Cpi is set on the right side of the third Schottky diode and the fourth Schottky diode, and the parallel capacitor Cp i One end is connected to the upper right wall of the horizontal strip hole, and the other end of the parallel capacitor Cpi is connected to the lower right wall of the horizontal strip hole.

[0182] Cpi represents the parallel capacitance set in the i-th resonance unit, i is a natural number between 1 and 4 to 6; specifically:

[0183] Cp1 represents the parallel capacitance set by the first resonance unit, Cp1 = 0.05pF;

[0184] Cp4 represents the parallel capacitance set by the fourth resonance unit, Cp4 = 0.1pF;

[0185] Cp5 represents the parallel capacitance set by the fifth resonance unit, Cp5 = 1.8 pF;

[0186] Cp6 represents the parallel capacitance provided by the sixth resonance unit, Cp6=0.9 pF.

[0187] The thickness t2 of the metal plate 7 is 0.016 mm; the material of the metal plate 7 is copper.

[0188] The thickness t1 of the dielectric substrate 8 is 0.5 mm. The dielectric substrate 8 is an insulating material, and the relative dielectric constant of the insulating material is 1.0.

[0189] The length l of the horizontal strip hole is equal to that of the vertical strip hole; l=0.85L, where L represents the side length of the metal plate 7 and the dielectric substrate 8, in mm.

[0190] The width b of the horizontal strip holes and the vertical strip holes are equal; b=5 mm.

[0191] The rectifier resistor R=10 kΩ.

[0192] The rectifier capacitor C=0.1nF.

[0193] Example 8

[0194] A multi-band pulse wave filter based on a capacitive nonlinear circuit. This embodiment is the same as Embodiment 1 except for the following technical parameters:

[0195] Cp1 represents the parallel capacitance set by the first resonance unit, Cp1 = 0.3pF;

[0196] Cp4 represents the parallel capacitance set by the fourth resonance unit, Cp4 = 0.8pF;

[0197] Cp5 represents the parallel capacitance set by the fifth resonance unit, Cp5 = 2.5 pF;

[0198] Cp6 represents the parallel capacitance provided by the sixth resonance unit, Cp6=1.5 pF.

[0199] The thickness t2 of the metal plate 7 is 0.020 mm; the material of the metal plate 7 is aluminum.

[0200] The thickness t1 of the dielectric substrate 8 is 5 mm. The dielectric substrate 8 is an insulating material, and the relative dielectric constant of the insulating material is 10.0.

[0201] The metal plate 7 and the dielectric substrate 8 are both square flat plates with a side length of L=36 mm.

[0202] The length l of the horizontal strip hole is equal to that of the vertical strip hole; l=0.95L, where L represents the side length of the metal plate 7 and the dielectric substrate 8, in mm.

[0203] The width b of the horizontal strip holes is equal to the width b of the vertical strip holes; b=10 mm.

[0204] The rectifier resistor R=500 kΩ.

[0205] The rectifier capacitor C=100nF.

[0206] Example 9

[0207] A multi-band pulse wave filter based on a capacitive nonlinear circuit. This embodiment is the same as Embodiment 1 except for the following technical parameters:

[0208] Cp1 represents the parallel capacitance set by the first resonance unit, Cp1 = 0.08pF;

[0209] Cp4 represents the parallel capacitance set by the fourth resonance unit, Cp4 = 0.3pF;

[0210] Cp5 represents the parallel capacitance set by the fifth resonance unit, Cp5 = 2.0 pF;

[0211] Cp6 represents the parallel capacitance provided by the sixth resonance unit, Cp6=1.1 pF.

[0212] The thickness t2 of the metal plate 7 is 0.019 mm; the material of the metal plate 7 is silver.

[0213] The thickness t1 of the dielectric substrate 8 is 4.5 mm. The dielectric substrate 8 is an insulating material, and the relative dielectric constant of the insulating material is 4.0.

[0214] The metal plate 7 and the dielectric substrate 8 are both square flat plates with a side length of L=28 mm.

[0215] The length l of the horizontal strip hole is equal to that of the vertical strip hole; l=0.88L, where L represents the side length of the metal plate 7 and the dielectric substrate 8, in mm.

[0216] The width b of the horizontal strip holes and the vertical strip holes are equal; b=6 mm.

[0217] The rectifier resistor R=400 kΩ.

[0218] The rectifier capacitor C=20nF.

[0219] The four-band pulse wave filter based on the capacitive nonlinear circuit prepared in Example 9 was simulated by the commercial electromagnetic simulation software ANSYS Electronics Desktop, and the following results were obtained: Figure 8 The transmittance simulation results of a four-band pulse wave filter based on a capacitive nonlinear circuit are shown. Figure 8 Middle: The horizontal axis represents the frequency, and the vertical axis represents the percentage of the transmitted electromagnetic wave energy to the total incident energy (i.e., transmittance). Figure 8 It can be seen that: under the four operating frequency conditions of 1.1GHz, 1.4GHz, 2.2GHz and 2.7GHz, the transmittance of the filter to continuous waves is higher than 85%, and the transmittance to 50ns short pulse waves is lower than 15%; compared with the prior art, this embodiment realizes the multi-band waveform selection effect, ensuring high transmittance to continuous waves and low transmittance to 50ns pulse waves.

[0220] Compared with the prior art, this specific implementation has the following positive effects:

[0221] (1) The basic structure of the multi-band pulse wave filter based on the capacitive nonlinear circuit prepared in this specific embodiment is composed of 2 to 4 resonant units, each of which is composed of a metal plate 7 and a dielectric substrate 8. A circuit module 9 is provided in the middle of the cross-shaped strip hole of the metal plate 7. The structure is simple, the cost is low, no power supply or external voltage control is required, and it can be used independently with strong applicability.

[0222] (2) This specific implementation adopts the method of connecting a full-wave rectifier circuit in parallel with the capacitor Cpi inside the resonant unit, so that the equivalent capacitance of the designed multi-band pulse wave filter based on the capacitive nonlinear circuit is increased, and the overall operating frequency is moved to the low-frequency side, thereby achieving the adjustable operating frequency of the pulse wave filter, and combining multiple resonant units working at different frequencies together to achieve a multi-band pulse wave filtering effect, which has low transmittance to pulse waves in multiple operating frequency bands and high transmittance to continuous waves.

[0223] (3) Through the filter structure and full-wave rectification circuit adopted in this specific embodiment, after the electromagnetic wave is incident, an induced current will be generated on the metal plate 7. The diode bridge in the circuit module 9 fully rectifies the input waveform and converts most of the incident energy wave into a zero-frequency component. When a short pulse signal is incident on the multi-band pulse filter, the short pulse signal generates an induced current on the metal plate 7, which is then rectified by the diode bridge. The current flows into the parallel circuit composed of the rectifier capacitor C and the rectifier resistor R in the circuit module 9. By utilizing the characteristics of the capacitor, the charge is first stored in the rectifier capacitor C, and then the incident pulse wave electromagnetic energy is converted into heat energy for absorption and release through the parallel rectifier resistor R, thereby achieving a low transmittance of the pulse wave. After the continuous wave fully charges the rectifier capacitor C, the inherent resonance mechanism of the cross-shaped strip hole structure is maintained to transmit strongly, thereby achieving a multi-band pulse wave filtering effect while protecting the circuit components, and also protecting the electronic components from electromagnetic interference and electromagnetic radiation.

[0224] This specific embodiment generates multiple different resonance points by connecting capacitors Cpi of different capacitance values ​​in parallel in the circuit module 9 of each resonance unit, thereby achieving a multi-band filtering effect. The continuous wave transmittance of the dual-band pulse wave filter is higher than 85%, and the pulse wave transmittance is lower than 25%. The continuous wave transmittance of the three-band pulse wave filter is higher than 85%, and the pulse wave transmittance is lower than 20%. The continuous wave transmittance of the four-band pulse wave filter is higher than 85%, and the pulse wave transmittance is lower than 15%.

[0225] Therefore, the specific implementation has a simple structure, low cost, can achieve low transmission of pulse waves while achieving strong transmission of continuous waves, can achieve pulse wave filtering effect in multiple frequency bands, and has good filtering effect. The specific implementation is suitable for fields such as communications, radars, and antennas.

Claims

1. A multi-band pulse wave filter based on a capacitive nonlinear circuit, characterized in that The multi-band pulse wave filter based on capacitive nonlinear circuit includes the following three types: Dual-band pulse wave filter based on capacitive nonlinear circuit; A three-band pulse wave filter based on a capacitive nonlinear circuit; Four-band pulse wave filter based on capacitive nonlinear circuit; The dual-band pulse wave filter based on a capacitive nonlinear circuit is composed of a first resonance unit (1) and a second resonance unit (2) connected to form a rectangular parallelepiped, wherein the lower side surface of the first resonance unit (1) is connected to the upper side surface of the second resonance unit (2); the left side surfaces of the first resonance unit (1) and the second resonance unit (2) are flush, and the front planes of the first resonance unit (1) and the second resonance unit (2) are flush; The three-band pulse wave filter based on the capacitive nonlinear circuit is composed of a first resonant unit (1), a second resonant unit (2) and a third resonant unit (3) connected to form a rectangular parallelepiped, the lower side of the first resonant unit (1) is connected to the upper side of the second resonant unit (2), and the lower side of the second resonant unit (2) is connected to the upper side of the third resonant unit (3); the left sides of the first resonant unit (1), the second resonant unit (2) and the third resonant unit (3) are flush, and the front planes of the first resonant unit (1), the second resonant unit (2) and the third resonant unit (3) are flush; The four-band pulse wave filter based on the capacitive nonlinear circuit is composed of a first resonant unit (1), a fourth resonant unit (4), a fifth resonant unit (5) and a sixth resonant unit (6) connected to form a cube; the lower side of the first resonant unit (1) is connected to the upper side of the sixth resonant unit (6), the lower side of the fourth resonant unit (4) is connected to the upper side of the fifth resonant unit (5), the left side of the fourth resonant unit (4) is connected to the right side of the first resonant unit (1), and the left side of the fifth resonant unit (5) is connected to the right side of the sixth resonant unit (6); the upper side of the fourth resonant unit (4) is flush with the upper side of the first resonant unit (1), and the right side of the fourth resonant unit (4) is flush with the right side of the fifth resonant unit (5); the front planes of the first resonant unit (1), the fourth resonant unit (4), the fifth resonant unit (5) and the sixth resonant unit (6) are flush; The first resonance unit (1), the second resonance unit (2), the third resonance unit (3), the fourth resonance unit (4), the fourth resonance unit (4), the fifth resonance unit (5) and the sixth resonance unit (6) have the same structure and are all composed of a metal plate (7), a dielectric substrate (8) and a circuit module (9); The front surface of the dielectric substrate (8) is in close contact with the rear surface of the metal plate (7); the metal plate (7) and the dielectric substrate (8) are both square flat plates with a side length L of 24 to 36 mm; The metal plate (7) is a square flat plate made of metal material with a cross-shaped strip hole, the cross-shaped strip hole is composed of mutually perpendicular horizontal strip holes and vertical strip holes, and the center line of the horizontal strip hole and the center line of the vertical strip hole coincide with the perpendicular midline of the vertical side and the perpendicular midline of the horizontal side of the metal plate (7) respectively; The upper wall and the lower wall of the horizontal strip hole wall adjacent to the left side of the vertical strip hole are correspondingly called the upper left wall of the horizontal strip hole and the lower left wall of the horizontal strip hole, and the upper wall of the horizontal strip hole wall adjacent to the right side of the vertical strip hole and the lower wall of the horizontal strip hole are correspondingly called the upper right wall and the lower right wall of the horizontal strip hole; A circuit module (9) is arranged at the center of the "cross"-shaped strip hole of the metal plate (7); the circuit module (9) is composed of a full-wave rectifier circuit, a rectifier capacitor C, a rectifier resistor R and a parallel capacitor Cpi; The structure of the full-wave rectifier circuit is: the anode of the first Schottky diode is connected to the upper left wall of the horizontal strip hole, the anode of the second Schottky diode is connected to the lower left wall of the horizontal strip hole, the cathode of the third Schottky diode is connected to the upper right wall of the horizontal strip hole, and the cathode of the fourth Schottky diode is connected to the lower right wall of the horizontal strip hole; the cathode of the first Schottky diode is connected to the cathode of the second Schottky diode, and the anode of the third Schottky diode is connected to the anode of the fourth Schottky diode; One end of the rectifier capacitor C is connected to the cathode of the first Schottky diode, and the other end of the rectifier capacitor C is connected to the anode of the third Schottky diode; one end of the rectifier resistor R is connected to the cathode of the second Schottky diode, and the other end of the rectifier resistor R is connected to the anode of the fourth Schottky diode; the parallel capacitor Cpi is set on the right side of the third Schottky diode and the fourth Schottky diode, and the parallel capacitor Cp i One end is connected to the upper right wall of the horizontal strip hole, and the other end of the parallel capacitor Cpi is connected to the lower right wall of the horizontal strip hole; Cpi represents the parallel capacitance set in the i-th resonance unit, i is a natural number from 1 to 6; specifically: Cp1 represents the parallel capacitance set by the first resonance unit, Cp1 = 0.05-0.3pF; Cp2 represents the parallel capacitance of the second resonance unit, Cp2 = 0.4-1.8 pF; Cp3 represents the parallel capacitance set by the third resonance unit, Cp3 = 1.9 ~ 2.5pF; Cp4 represents the parallel capacitance provided by the fourth resonance unit, Cp4=0.1-0.8pF; Cp5 represents the parallel capacitance provided by the fifth resonance unit, Cp5=1.8-2.5pF; Cp6 represents the parallel capacitance provided by the sixth resonance unit, Cp6=0.9-1.5 pF.

2. The multi-band pulse wave filter based on a capacitive nonlinear circuit as claimed in claim 1, characterized in that The thickness t2 of the metal plate (7) is 0.016-0.020 mm; the material of the metal plate (7) is one of copper, aluminum and silver.

3. The multi-band pulse wave filter based on a capacitive nonlinear circuit as claimed in claim 1, characterized in that The thickness t1 of the dielectric substrate (8) is 0.5-5 mm; the dielectric substrate (8) is an insulating material, and the relative dielectric constant of the insulating material is 1.0-10.

0.

4. The multi-band pulse wave filter based on a capacitive nonlinear circuit as claimed in claim 1, characterized in that The length l of the horizontal strip hole and the vertical strip hole are equal; l=0.85-0.95L, L represents the side length of the metal plate (7) and the dielectric substrate (8), the unit is mm.

5. The multi-band pulse wave filter based on capacitive nonlinear circuit as claimed in claim 1, characterized in that The width b of the horizontal strip holes is equal to that of the vertical strip holes; b=5-10 mm.

6. The multi-band pulse wave filter based on a capacitive nonlinear circuit as claimed in claim 1 or claim 2, characterized in that The rectifier resistor R=10-500 kΩ.

7. The multi-band pulse wave filter based on a capacitive nonlinear circuit as claimed in claim 1 or claim 3, characterized in that The rectifier capacitor C=0.1-100nF.

8. The multi-band pulse wave filter based on a capacitive nonlinear circuit as claimed in claim 1, characterized in that The first Schottky diode, the second Schottky diode, the third Schottky diode and the fourth Schottky diode are of the same model, all of which are HSMS-286x series.

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