Gallium nitride-based semiconductor laser element with hole expansion and injection layer

Abstract

The invention discloses a gallium nitride-based semiconductor laser element with a hole expansion and injection layer, which sequentially comprises a substrate, a lower coating layer, a lower wave layer, a quantum well, an upper waveguide layer and an upper coating layer from bottom to top, and is characterized in that the hole expansion and injection layer is arranged between the upper waveguide layer and the upper coating layer; the descending angle from the peak position of the peak rate electric field of the hole expansion and injection layer to the direction of the upper coating layer is alpha, and the descending angle from the peak position of the peak rate electric field of the hole expansion and injection layer to the direction of the quantum well is beta, the descending angle of the peak position of the peak rate electric field of the upper coating layer towards the quantum well direction is gamma, wherein 30 degrees < = gamma < = beta < = alpha < = 90 degrees. The double functions of improving the hole injection efficiency and blocking electron overflow are achieved, the threshold current of the laser is reduced, and the slope efficiency and the limiting factor of the laser are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a gallium nitride-based semiconductor laser element with a hole expansion and injection layer. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes.

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser is up to KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to a quantum well or a pn junction to generate radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems: the absorption loss of impurities in the optical waveguide of the violet laser is high, which causes the internal optical loss to increase, resulting in a decrease in the laser slope efficiency and an increase in the threshold current; the electron-hole asymmetry and mismatch in the quantum well are serious, electron leakage and carrier delocalization occur, hole transport in the quantum well is more difficult, carrier injection is uneven, and gain is uneven, which makes the laser gain spectrum wider and the peak gain decrease, resulting in an increase in the laser threshold current; non-radiative recombination losses and free carrier absorption in the active region of the violet laser generate a lot of heat. If the laser has low thermal conductivity, poor heat dissipation, and poor temperature characteristics, it will aggravate the thermal mismatch between the semiconductor epitaxial layers, leading to problems such as an increase in threshold current, a decrease in output optical power and slope efficiency. Summary of the invention

[0009] The present invention proposes a gallium nitride-based semiconductor laser element with a hole expansion and injection layer, which has the dual functions of improving hole injection efficiency and blocking electron overflow, reducing the threshold current of the laser, and improving the slope efficiency and limiting factor of the laser.

[0010] The present invention provides a gallium nitride-based semiconductor laser element with a hole expansion and injection layer, which comprises, from bottom to top, a substrate, a lower cladding layer, a lower wave layer, a quantum well, an upper waveguide layer, and an upper cladding layer, wherein a hole expansion and injection layer is provided between the upper waveguide layer and the upper cladding layer;

[0011] The peak position of the peak rate electric field of the hole expansion and injection layer decreases at an angle α toward the upper cladding layer, the peak position of the peak rate electric field of the hole expansion and injection layer decreases at an angle β toward the quantum well, and the peak position of the peak rate electric field of the upper cladding layer decreases at an angle γ toward the quantum well, wherein: 30°≤γ≤β≤α≤90°;

[0012] The rising angle of the valley position of the radiation recombination coefficient of the hole expansion and injection layer toward the upper cladding layer is θ, the rising angle of the valley position of the radiation recombination coefficient of the hole expansion and injection layer toward the quantum well is δ, and the rising angle of the valley position of the radiation recombination coefficient of the upper cladding layer toward the quantum well is σ, wherein: 25°≤σ≤δ≤θ≤90°;

[0013] The peak position of the separation energy of the hole expansion and injection layer decreases at an angle of φ toward the upper cladding layer, the peak position of the separation energy of the hole expansion and injection layer decreases at an angle of ψ toward the quantum well, and the peak position of the separation energy of the upper cladding layer decreases at an angle of μ toward the quantum well, wherein: 10°≤μ≤ψ≤φ≤90°;

[0014] The rising angle of the valley position of the density of the hole expansion and injection layer toward the upper cladding layer is υ, the rising angle of the valley position of the density of the hole expansion and injection layer toward the quantum well is ρ, and the rising angle of the valley position of the density of the upper cladding layer toward the quantum well is ω, wherein: 20°≤ω≤ρ≤υ≤90°.

[0015] Preferably, the descending angle of the peak rate electric field and separation energy peak position of the hole expansion and injection layer toward the upper coating layer, and the rising angle of the radiation recombination coefficient and density valley position of the hole expansion and injection layer toward the upper coating layer have the following relationship: 10°≤φ≤υ≤θ≤α≤90°.

[0016] Preferably, the descending angle of the peak rate electric field and separation energy peak position of the hole expansion and injection layer toward the quantum well, and the rising angle of the valley position of the radiation recombination coefficient and density of the hole expansion and injection layer toward the quantum well have the following relationship: 10°≤ψ≤ρ≤δ≤β≤90°.

[0017] Preferably, the descending angle of the peak rate electric field and the peak position of the separation energy of the upper cladding layer toward the quantum well, and the rising angle of the valley position of the radiation recombination coefficient and density of the upper cladding layer toward the quantum well have the following relationship: 10°≤μ≤ω≤σ≤γ≤90°.

[0018] Preferably, the angle of descent of the peak rate electric field and the peak position of the separation energy of the hole expansion and injection layer toward the upper cladding layer, the angle of rise of the radiative recombination coefficient and the valley position of the density of the hole expansion and injection layer toward the upper cladding layer, the angle of descent of the peak rate electric field and the peak position of the separation energy of the hole expansion and injection layer toward the quantum well, the angle of rise of the radiative recombination coefficient and the valley position of the density of the hole expansion and injection layer toward the quantum well, the angle of descent of the peak rate electric field and the peak position of the separation energy of the upper cladding toward the quantum well, and the angle of rise of the radiative recombination coefficient and the valley position of the density of the upper cladding toward the quantum well have the following relationship: 10°≤μ≤ψ≤φ≤ω≤ρ≤υ≤σ≤δ≤θ≤γ≤β≤α≤90°.

[0019] Preferably, the hole expansion and injection layer is any one or any combination of AlGaN, AlInGaN, AlN, GaN, AlInN, and InGaN.

[0020] Preferably, the peak rate electric field distribution of the hole expansion and injection layer has a third quadrant curve distribution of function y=sinx / x; the separation energy distribution of the hole expansion and injection layer has a function y=x 2si nx first quadrant curve distribution; the hole expansion and injection layer radiation recombination coefficient distribution has a function y = x 2 cosx first four-quadrant curve distribution; the density distribution of the hole expansion and injection layer has a function y=x / cosx second quadrant curve distribution.

[0021] Preferably, the quantum well is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the thickness is 10 to 150 angstroms, and the barrier layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaI Any one or any combination of nP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0022] Preferably, the lower cladding layer, the upper waveguide layer, the lower waveguide layer, and the upper cladding layer are any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al GaInP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0023] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0024] Compared with the prior art, the gallium nitride-based semiconductor laser element with a hole expansion and injection layer provided in an embodiment of the present invention has the following beneficial effects: regulating the peak rate electric field interface steepness and separation energy interface steepness of the hole expansion and injection layer and the quantum well and upper cladding layer interface, improving the solubility of the doping element, reducing the Mg activation energy and improving the Mg ionization efficiency, improving the hole concentration of the hole expansion and injection layer, reducing the resistance and voltage of the laser, improving the efficiency and transport efficiency of hole injection into the quantum well, and improving the photoelectric conversion efficiency of the laser. At the same time, regulating the radiation recombination coefficient interface steepness and density interface steepness of the hole expansion and injection layer and the quantum well and upper cladding layer interface, reducing internal optical absorption loss, improving the potential barrier of the quantum well and the hole expansion and injection layer interface, reducing the probability of electron overflow, thereby achieving the dual functions of improving the hole injection efficiency and blocking the electron overflow, reducing the threshold current of the laser, and improving the slope efficiency and limiting factor of the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic structural diagram of a gallium nitride-based semiconductor laser element with a hole expansion and injection layer according to an embodiment of the present invention;

[0026] Figure 2 It is a SIMS secondary ion mass spectrum of a gallium nitride-based semiconductor laser element with a hole expansion and injection layer according to an embodiment of the present invention;

[0027] Figure 3 This is a SIMS secondary ion mass spectrum of a gallium nitride-based semiconductor laser element with a hole expansion and injection layer according to an embodiment of the present invention (partially enlarged view);

[0028] Figure 4 This is a TEM lens electron microscope image of a gallium nitride-based semiconductor laser element with a hole expansion and injection layer according to an embodiment of the present invention;

[0029] Figure 5This is a TEM lens electron microscope image (partial magnified image) of a gallium nitride-based semiconductor laser element with a hole expansion and injection layer according to an embodiment of the present invention;

[0030] Figure 6 This is a TEM lens electron microscope image (partial magnified image) of a gallium nitride-based semiconductor laser element with a hole expansion and injection layer according to an embodiment of the present invention.

[0031] Reference numerals: 100: substrate; 101: lower cladding layer; 102: lower wave layer; 103: quantum well; 104: upper waveguide layer, 105: upper cladding layer, 106: hole expansion and injection layer. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0033] In order to solve the above problems, a gallium nitride-based semiconductor laser element with a hole expansion and injection layer provided in an embodiment of the present application will be introduced and described in detail through the following specific embodiments.

[0034] Reference Figure 1-6 The present invention provides a gallium nitride-based semiconductor laser element with a hole expansion and injection layer, which includes, from bottom to top, a substrate 100, a lower cladding layer 101, a lower wave layer 102, a quantum well 103, an upper waveguide layer 104, and an upper cladding layer 105, wherein a hole expansion and injection layer 106 is provided between the upper waveguide layer 104 and the upper cladding layer 105;

[0035] The peak position of the peak rate electric field of the hole expansion and injection layer 106 decreases at an angle α toward the upper cladding layer 105, the peak position of the peak rate electric field of the hole expansion and injection layer 106 decreases at an angle β toward the quantum well 103, and the peak position of the peak rate electric field of the upper cladding layer 105 decreases at an angle γ toward the quantum well 103, wherein: 30°≤γ≤β≤α≤90°;

[0036] The rising angle of the valley position of the radiation recombination coefficient of the hole expansion and injection layer 106 toward the upper cladding layer 105 is θ, the rising angle of the valley position of the radiation recombination coefficient of the hole expansion and injection layer 106 toward the quantum well 103 is δ, and the rising angle of the valley position of the radiation recombination coefficient of the upper cladding layer 105 toward the quantum well 103 is σ, wherein: 25°≤σ≤δ≤θ≤90°;

[0037] The peak position of the separation energy of the hole expansion and injection layer 106 decreases at an angle φ toward the upper cladding layer 105, the peak position of the separation energy of the hole expansion and injection layer 106 decreases at an angle ψ toward the quantum well 103, and the peak position of the separation energy of the upper cladding layer 105 decreases at an angle μ toward the quantum well 103, wherein: 10°≤μ≤ψ≤φ≤90°;

[0038] The rising angle of the valley position of the density of the hole expansion and injection layer 106 towards the upper cladding layer 105 is υ, the rising angle of the valley position of the density of the hole expansion and injection layer 106 towards the quantum well 103 is ρ, and the rising angle of the valley position of the density of the upper cladding layer 105 towards the quantum well 103 is ω, wherein: 20°≤ω≤ρ≤υ≤90°.

[0039] The descending angle of the peak rate electric field and separation energy peak position of the hole expansion and injection layer 106 toward the upper coating layer 105, and the rising angle of the valley position of the radiation recombination coefficient and density of the hole expansion and injection layer 106 toward the upper coating layer 105 have the following relationship: 10°≤φ≤υ≤θ≤α≤90°.

[0040] The decreasing angle of the peak rate electric field and separation energy peak position of the hole expansion and injection layer 106 toward the quantum well 103, and the increasing angle of the valley position of the radiation recombination coefficient and density of the hole expansion and injection layer 106 toward the quantum well 103 have the following relationship: 10°≤ψ≤ρ≤δ≤β≤90°.

[0042] The descending angle of the peak rate electric field and the peak position of the separation energy of the upper cladding layer 105 toward the quantum well 103, and the rising angle of the valley position of the radiation recombination coefficient and density of the upper cladding layer 105 toward the quantum well 103 have the following relationship: 10°≤μ≤ω≤σ≤γ≤90°.

[0043] The descending angle of the peak rate electric field and the peak position of the separation energy of the hole expansion and injection layer 106 toward the upper cladding layer 105, the rising angle of the radiative recombination coefficient and the valley position of the density of the hole expansion and injection layer 106 toward the upper cladding layer 105, the descending angle of the peak rate electric field and the peak position of the separation energy of the hole expansion and injection layer 106 toward the quantum well 103, the rising angle of the radiative recombination coefficient and the valley position of the density of the hole expansion and injection layer 106 toward the quantum well 103, the descending angle of the peak rate electric field and the peak position of the separation energy of the upper cladding layer 105 toward the quantum well 103, and the rising angle of the radiative recombination coefficient and the valley position of the density of the upper cladding layer 105 toward the quantum well 103 have the following relationship: 10°≤μ≤ψ≤φ≤ω≤ρ≤υ≤σ≤δ≤θ≤γ≤β≤α≤90°.

[0044] The peak rate electric field distribution of the hole expansion and injection layer 106 has a third quadrant curve distribution of function y=sinx / x; the separation energy distribution of the hole expansion and injection layer 106 has a function y=x 2 The first quadrant curve distribution of si nx; the radiation recombination coefficient distribution of the hole expansion and injection layer 106 has a function y=x 2 cosx first quadrant curve distribution; the density distribution of the hole expansion and injection layer 106 has a function y=x / cosx second quadrant curve distribution.

[0045] The present invention regulates the interface steepness and density steepness of the radiation recombination coefficient of the hole expansion and injection layer 106 and the quantum well 103 and the upper cladding layer 105, reduces internal optical absorption loss, improves the potential barrier of the quantum well and the hole expansion and injection layer interface, reduces the probability of electron overflow, and thus achieves the dual functions of improving the hole injection efficiency and blocking the electron overflow, reduces the threshold current of the laser, and improves the slope efficiency and limiting factor of the laser. The details are shown in the following table:

[0046] UV laser project Conventional laser Laser of the present invention Range of change Slope efficiency (W / A) 1.02 1.98 94％ Limiting Factor 1.40％ 3.14％ 124％ <![CDATA[Internal optical loss (cm -1 )]]> 17.2 9.1 -47％ <![CDATA[Threshold current density (kA / cm 2 )]]> 3.6 1.06 -71％ Voltage (V) 8.5 4.7 -45％ Series resistance (Ω) 29 10.2 -65％ Optical power(W) 3.05 4.15 36％

[0047] In the present invention, the hole expansion and injection layer 106 is any one or any combination of AlGaN, AlInGaN, AlN, GaN, AlInN, and InGaN.

[0048] In the present invention, the quantum well 103 is a periodic structure composed of a well layer and a barrier layer, the period number is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al GaInP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the thickness is 10 to 150 angstroms, and the barrier layer is GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaN, Any one or any combination of nGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0049] In the present invention, the lower cladding layer 101, the lower wave layer 102, the upper waveguide layer 104, and the upper cladding layer 105 are any one or any combination of GaN, InGaN, InN, Al InN, Al GaN, Al InGaN, Al N, GaAs, GaP, InP, Al GaAs, Al InGaAs, Al Ga InP, InGaAs, InGaAsN, Al InAs, Al InP, Al GaP, InGaP, GaSb, InSb, InAs, InAsSb, Al GaSb, Al Sb, InGaSb, Al GaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0050] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x、Sapphire / SiO2 / Si N x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0051] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A gallium nitride-based semiconductor laser element with a hole expansion and injection layer, comprising, from bottom to top, a substrate (100), a lower cladding layer (101), a lower wave layer (102), a quantum well (103), an upper waveguide layer (104), and an upper cladding layer (105), characterized in that: A hole expansion and injection layer (106) is provided between the upper waveguide layer (104) and the upper cladding layer (105); The peak position of the peak rate electric field of the hole expansion and injection layer (106) decreases at an angle α toward the upper cladding layer (105), the peak position of the peak rate electric field of the hole expansion and injection layer (106) decreases at an angle β toward the quantum well (103), and the peak position of the peak rate electric field of the upper cladding layer (105) decreases at an angle γ toward the quantum well (103), wherein: 30°≤γ≤β≤α≤90°; The rising angle of the valley position of the radiation recombination coefficient of the hole expansion and injection layer (106) toward the upper cladding layer (105) is θ, the rising angle of the valley position of the radiation recombination coefficient of the hole expansion and injection layer (106) toward the quantum well (103) is δ, and the rising angle of the valley position of the radiation recombination coefficient of the upper cladding layer (105) toward the quantum well (103) is σ, wherein: 25°≤σ≤δ≤θ≤90°; The peak position of the separation energy of the hole expansion and injection layer (106) decreases at an angle φ toward the upper cladding layer, the peak position of the separation energy of the hole expansion and injection layer (106) decreases at an angle ψ toward the quantum well (103), and the peak position of the separation energy of the upper cladding layer (105) decreases at an angle μ toward the quantum well (103), wherein: 10°≤μ≤ψ≤φ≤90°; The rising angle of the valley position of the density of the hole expansion and injection layer (106) toward the upper cladding layer (105) is υ, the rising angle of the valley position of the density of the hole expansion and injection layer (106) toward the quantum well (103) is ρ, and the rising angle of the valley position of the density of the upper cladding layer (105) toward the quantum well (103) is ω, wherein: 20°≤ω≤ρ≤υ≤90°.

2. The gallium nitride-based semiconductor laser device with a hole expansion and injection layer according to claim 1, characterized in that: The peak rate electric field and the peak position of the separation energy of the hole expansion and injection layer (106) have the following relationship: the descending angle of the peak position of the separation energy toward the upper coating layer (105), and the rising angle of the valley position of the radiation recombination coefficient and density of the hole expansion and injection layer (106) toward the upper coating layer (105): 10°≤φ≤υ≤θ≤α≤90°.

3. The gallium nitride-based semiconductor laser device with a hole expansion and injection layer according to claim 1, characterized in that: The peak rate electric field and the peak position of the separation energy of the hole expansion and injection layer (106) have the following relationship: 10°≤ψ≤ρ≤δ≤β≤90°.

4. The gallium nitride-based semiconductor laser device with a hole expansion and injection layer according to claim 1, characterized in that: The descending angle of the peak rate electric field and the peak position of the separation energy of the upper cladding layer (105) toward the quantum well (103), and the rising angle of the valley position of the radiation recombination coefficient and density of the upper cladding layer (105) toward the quantum well (103) have the following relationship: 10°≤μ≤ω≤σ≤γ≤90°.

5. A gallium nitride-based semiconductor laser device with a hole expansion and injection layer according to claims 2-4, characterized in that: The peak rate electric field and the peak position of the separation energy of the hole expansion and injection layer (106) are decreased in the direction of the cladding layer (105), the valley position of the radiation recombination coefficient and the density of the hole expansion and injection layer (106) are increased in the direction of the cladding layer (105), the peak rate electric field and the peak position of the separation energy of the hole expansion and injection layer (106) are decreased in the direction of the quantum well (103), and the peak position of the hole expansion and injection layer (106) is decreased in the direction of the quantum well (103). 6), the rising angle of the valley position of the radiation recombination coefficient and density toward the quantum well (103), the falling angle of the peak rate electric field and the peak position of the separation energy of the upper cladding layer (105) toward the quantum well (103), and the rising angle of the valley position of the radiation recombination coefficient and density of the upper cladding layer (105) toward the quantum well (103) have the following relationship: 10°≤μ≤ψ≤φ≤ω≤ρ≤υ≤σ≤δ≤θ≤γ≤β≤α≤90°.

6. The gallium nitride-based semiconductor laser device with a hole expansion and injection layer according to claim 1, characterized in that: The hole expansion and injection layer (106) is any one or any combination of AlGaN, AlInGaN, AlN, GaN, AlInN and InGaN.

7. The gallium nitride-based semiconductor laser device with a hole expansion and injection layer according to claim 1, characterized in that: The peak rate electric field distribution of the hole expansion and injection layer (106) has a third quadrant curve distribution of function y=sinx / x; the separation energy distribution of the hole expansion and injection layer (106) has a function y=x 2 sinx first quadrant curve distribution; the radiation recombination coefficient distribution of the hole expansion and injection layer (106) has a function y=x 2 cosx first quadrant curve distribution; the density distribution of the hole expansion and injection layer (106) has a function y=x / cosx second quadrant curve distribution.

8. The gallium nitride-based semiconductor laser device with a hole expansion and injection layer according to claim 1, characterized in that: The quantum well (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or the like. Any combination, with a thickness of 10 to 150 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

9. The gallium nitride-based semiconductor laser device with a hole expansion and injection layer according to claim 1, characterized in that: The lower cladding layer (101), the lower wave layer (102), the upper waveguide layer (104), and the upper cladding layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

10. The gallium nitride-based semiconductor laser device with a hole expansion and injection layer according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

Images