Organic photoelectrochemical transistor sensor based on shadow effect Pt / n-Si grid and preparation and application thereof

Abstract

The invention belongs to the technical field of organic photoelectrochemical transistors, and particularly relates to an organic photoelectrochemical transistor sensor based on a shadow effect Pt / n-Si grid and preparation and application of the organic photoelectrochemical transistor sensor. The sensor comprises a Pt / n-Si grid electrode based on the shadow effect and an organic photoelectrochemical transistor, the organic photoelectrochemical transistor comprises an electrolyte solution, a source electrode, a drain electrode and an organic semiconductor film, the source electrode and the drain electrode are spaced, the source electrode and the drain electrode are covered with the organic semiconductor film, and glucose oxidase and hydrogen peroxide horseradish enzyme are modified on the Pt / n-Si grid electrode. When the sensor is used for glucose detection, the two enzymes can catalyze glucose to generate cascade reaction to generate precipitates, photo-generated voltage generated by the grid electrode can be reduced along with increase of the precipitation amount, then the change of the grid electrode voltage is further amplified through channel current, then the detection sensitivity is greatly improved, and the sensor is light in structure and convenient to use. The method is easy to integrate, wide in application scene and good in development prospect.

Description

Technical Field

[0001] The present invention belongs to the technical field of organic photoelectrochemical transistors, and in particular relates to an organic photoelectrochemical transistor sensor based on a shadow effect Pt / n-Si gate and a preparation and application thereof. Background Art

[0002] Organic Electrochemical Transistor (OECT) is a special type of organic thin film transistor that has made significant progress in the fields of electrochemical sensing and biosensing. OECT combines the characteristics of organic electronics and electrochemistry, and has the advantages of high transconductance, easy integration, low operating voltage, good flexibility and biocompatibility. However, current organic electrochemical transistors require voltage to be applied to the gate when working, which will deteriorate the stability of some fragile biomolecules and is not conducive to detection. Therefore, how to reduce or even eliminate the application of gate voltage is an issue that needs to be studied.

[0003] Photoelectrochemical (PEC) bioanalysis technology is an innovative analytical method that uses the interaction between light and semiconductor materials to generate electrical signals, which are used as detection signals to detect specific target molecules or biological entities with excellent sensitivity. However, since the PEC process focuses on the conversion and utilization of light energy rather than signal amplification, it does not have the necessary amplification capabilities exhibited by transistors. In contrast, the emerging organic photoelectrochemical transistor (OPECT) integrates the amplification capabilities of OECTs and reduces background noise because the input photons and output electrons are separated. In addition, it avoids the application of gate voltage, saving a power supply, and has been proven to be a promising technology for biological detection.

[0004] Glucose biomolecule detection is a vital task in the biomedical field because glucose is one of the main sources of energy in the human body. It plays a key role in maintaining normal physiological functions and metabolic balance. Abnormal changes in glucose concentration can directly affect human health, especially for diabetic patients, accurate monitoring of blood glucose levels is the key to their management of the disease and avoid complications. In recent years, emerging technologies such as photoelectrochemical sensors and organic electrochemical transistors have shown great potential in high sensitivity and real-time monitoring of glucose concentration. Because these technologies can be based on the interaction between glucose and biomaterials or semiconductor materials, through photoelectrochemical or electrochemical processes to convert into electrical signals, thereby achieving rapid detection of glucose concentration.

[0005] The shadow effect device is a new type of energy harvester based on a metal film / semiconductor structure. It mainly uses the lighting contrast caused by the shadow effect as an indirect power source, and generates a voltage difference between the illuminated area and the shadowed area to generate current. When a part of the device is illuminated, the metal work function of the area covered by the shadow and the illuminated area will be adjusted, causing electrons to flow from the illuminated area to the area covered by the shadow, thereby generating a potential difference. The device has a simple structure and can output a stable and significant voltage in a weak light environment. It is very suitable as a gate for an organic phototransistor, and is expected to solve the defect of poor stability of OECT in biomolecule detection. However, there is no report on the use of shadow effect devices for glucose biomolecule detection. Summary of the invention

[0006] In order to overcome the shortcomings of the above-mentioned prior art, the present invention uses Pt / n-Si with a shadow effect as a photosensitive gate to construct an OPECT sensor. The OPECT sensor has the advantages of high sensitivity, high selectivity, wide measurement range, low energy consumption, etc., and can achieve the purpose of rapid quantitative detection of glucose.

[0007] In order to achieve the above object, the technical solution adopted by the present invention is:

[0008] The first aspect of the present invention provides an organic photoelectrochemical transistor sensor based on a shadow effect Pt / n-Si gate, the organic photoelectrochemical transistor sensor comprising a Pt / n-Si photosensitive gate based on the shadow effect and an organic photoelectrochemical transistor, the Pt / n-Si gate being modified with glucose oxidase (HRP) and horseradish peroxide (GOX), the organic photoelectrochemical transistor comprising an electrolyte solution, a source and a drain with a gap in between, and an organic semiconductor film covering the source and the drain.

[0009] Preferably, the electrolyte solution comprises PBS solution.

[0010] The second aspect of the present invention further provides a method for preparing the organic photoelectrochemical transistor sensor based on the shadow effect Pt / n-Si gate according to the first aspect, comprising the following steps:

[0011] S1. Preparation and modification of Pt / n-Si photosensitive gate: Platinum is deposited on the surface of N-type silicon to form a Pt / N-Si photosensitive gate, and then a mixture of hydrogen peroxide horseradish enzyme and glucose oxidase is added to the electrode surface and incubated at low temperature for 6-10 hours, and then the modified electrode is immersed in a phosphate buffer solution to remove the physically adsorbed hydrogen peroxide horseradish enzyme and glucose oxidase, and the result is obtained;

[0012] S2. Preparation of organic photoelectrochemical transistor: titanium and gold are sputtered onto a glass substrate in sequence to form a source electrode and a drain electrode with a gap in between, and then coated with an organic semiconductor thin film layer to obtain;

[0013] S3. Insert the Pt / n-Si photosensitive gate of S1 and the organic photoelectrochemical transistor of S2 into the electrolyte solution at the same time, thus forming an organic photoelectrochemical transistor sensor based on the shadow effect Pt / n-Si gate.

[0014] Preferably, in S1, the thickness of platinum deposited on the silicon surface is 15-30 nm, the power used is 70-90 W, and the time is 20-50 S.

[0015] Preferably, in S1, the mixed solution containing hydrogen peroxide horseradish enzyme and glucose oxidase is a mixed solution prepared by 0.05-0.3M hydrogen peroxide horseradish enzyme and 0.05-0.3M glucose oxidase in a volume ratio of 1:1.

[0016] Preferably, in S1, the N-type silicon is first ultrasonically cleaned with toluene, acetone, ethanol, and water, respectively, and then blown dry with nitrogen before use.

[0017] Preferably, in S2, the material of the organic semiconductor thin film layer is poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid (PEDOT:PSS), the thickness of which is 100-150 nm, and it is prepared by spin coating, and after spin coating, it is heated at 170-190° C. in an inert gas atmosphere for 50-70 minutes.

[0018] Preferably, in S2, the thicknesses of titanium and gold are 7-20 nm and 80-120 nm, respectively.

[0019] Preferably, in S2, before use, the glass substrate is first ultrasonically cleaned in DI water, ethanol, isopropanol and acetone, respectively, and then subjected to ozone plasma treatment, the power used for the treatment is 140-160W, and the treatment time is 10-20 minutes.

[0020] The third aspect of the present invention provides the use of the organic photoelectrochemical transistor sensor based on the shadow effect Pt / n-Si gate described in the first aspect in the quantitative detection of glucose.

[0021] When the organic photoelectrochemical transistor sensor based on the shadow effect Pt / n-Si gate prepared by the present invention is used for glucose detection, the two enzymes can catalyze a cascade reaction of glucose to generate precipitates, and the photogenerated voltage generated by the gate will decrease with the increase of the amount of precipitation, and the change of the gate voltage will be further amplified by the channel current, thereby greatly improving the detection sensitivity.

[0022] Preferably, the detection method specifically comprises the following steps:

[0023] S1. A series of glucose solutions with known concentrations and 1 mM 4-chloro-1-naphthol (4-CN) are dripped onto the Pt / n-Si gate, and an insoluble precipitate is formed on the electrode surface after incubation. Then, the gate and the source and drain of the organic photoelectrochemical transistor are immersed in the electrolyte solution together, the source meter is turned on, the gate voltage is set to 0 V, and the It curve is tested for real-time monitoring. After the current is balanced, the light source is turned on, and the response current under light is tested. A standard curve is established according to the relationship between different concentrations of glucose and the corresponding response current;

[0024] S2. Add the glucose solution of the concentration to be tested and 1 mM 4-chloro-1-naphthol to the Pt / n-Si gate, and incubate to form an insoluble precipitate on the electrode surface. Then immerse the gate and the source and drain of the organic photoelectrochemical transistor in the electrolyte solution. Turn on the source meter, set the gate voltage to 0 V, test the It curve for real-time monitoring, turn on the light source after the current is balanced, test the response current under light, and substitute it into the standard curve of S1 to obtain the concentration of glucose to be tested.

[0025] More preferably, the light source used for illumination is a xenon lamp with a wavelength range of 300-800nm ​​and an illumination intensity of one sun.

[0026] More preferably, the incubation is at room temperature for more than 60 minutes.

[0027] More preferably, the effective area of ​​the Pt / n-Si gate is 0.6 cm 2 above.

[0028] Compared with the prior art, the present invention has the following beneficial effects:

[0029] The present invention discloses an organic photoelectrochemical transistor sensor based on a shadow effect Pt / n-Si gate, the sensor comprises a Pt / n-Si gate based on the shadow effect and an organic photoelectrochemical transistor, the organic photoelectrochemical transistor comprises an electrolyte solution, a source electrode and a drain electrode spaced in between, an organic semiconductor film covered on the source and drain electrodes, and the Pt / n-Si gate is modified with glucose oxidase and hydrogen peroxide horseradish enzyme. The organic photoelectrochemical transistor sensor has the advantages of high sensitivity, high selectivity, wide measurement range, low energy consumption, etc., and can achieve the purpose of rapid quantitative detection of glucose. Therefore, the present invention uses Pt / n-Si as a photosensitive gate material to construct a sensitive OPECT sensing platform, and the structure is light, easy to integrate, and can be widely used in various scenarios, with good development prospects.

[0030] At the same time, the present invention replaces the traditional Ag / AgCl gate in OECT with a photosensitive gate, which can eliminate the need for additional power supply equipment to provide gate voltage, simplify the device structure, reduce energy consumption, and enable the sensor to work under zero gate voltage conditions, with better biocompatibility. The Pt / n-Si-based OPECT biosensor of the present invention combines the characteristics of low background signal of PEC and the signal amplification function of OECT, and has higher sensitivity than traditional biosensors, so it has great application prospects in the fields of nucleic acid detection, enzyme biosensing, immunoassay, etc. In addition, on the basis of the original inorganic metal thin film electrode, a "shadow effect" device Pt / n-Si is constructed to provide gate photovoltage for OPECT, without the need for additional modification of nano-photoelectric materials, and can achieve high-sensitivity detection of biomolecules by OPECT under indoor shadow conditions, further expanding the application scenarios of OPECT devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 Schematic diagram of the Pt / N-Si photosensitive gate and its shadow effect test. φ is the electric potential under shadow / light, showing the flow of electrons in the shadow device under light.

[0032] Figure 2 This is the Pt / n-Si surface potential distribution diagram measured using a Kelvin probe force microscope, a is when the light is off, and b is when the light is on.

[0033] Figure 3 This is a schematic diagram of the structure of the source, drain and channel of an organic photoelectrochemical transistor, where the white part is the metal electrode and the green part is the glass substrate.

[0034] Figure 4 Schematic diagram of the structure of an organic photoelectrochemical transistor based on the shadow effect Pt / n-Si gate, where S and D are the source and drain, respectively, Gate is a photosensitive gate based on the shadow effect, and PEDOT:PSS is a semiconductor channel.

[0035] Figure 5 The signal comparison diagram of OPECT (blue curve) and PEC (red curve).

[0036] Figure 6 The OPECT signal curve of the organic photoelectrochemical transistor modified with different glucose concentrations under light.

[0037] Figure 7 Shows the detection results of different concentrations of glucose and the corresponding linear standard curve.

[0038] Figure 8 This is the detection result of 0.01M glucose concentration.

[0039] Fig. 9 This is a graph showing the specific test results of an organic photoelectrochemical transistor based on the shadow effect Pt / n-Si gate. DETAILED DESCRIPTION

[0040] The specific embodiments of the present invention are further described below. It should be noted that the description of these embodiments is used to help understand the present invention, but does not constitute a limitation of the present invention. In addition, the technical features involved in each embodiment of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0041] The experimental methods in the following examples are conventional methods unless otherwise specified, and the experimental materials used in the following examples are commercially available unless otherwise specified.

[0042] Example 1: Preparation of OPECT sensor based on shadow effect Pt / n-Si gate

[0043] (1) Preparation of photosensitive gate Pt / n-Si:

[0044] 1×2cm N-type silicon was cleaned, ultrasonicated with toluene, acetone, anhydrous ethanol, and deionized water for 15 minutes, and dried with nitrogen. Then, 20nm thick platinum (Pt) was deposited on the silicon surface by magnetron sputtering, with a power of 80W and a time of 30S. After the deposition was completed, it was washed with deionized water and dried to obtain a Pt / N-Si photosensitive gate.

[0045] Figure 1 The schematic diagram of the Pt / N-Si photosensitive gate and its shadow effect test is a simple Au / n-Si Schottky heterojunction. Before contact, the work function of Au is higher than that of n-Si. Due to the different work functions, free electrons flow from n-Si to Au. In equilibrium, a Schottky barrier is formed on the Au / n-Si interface. When a part is illuminated, the electron-hole pairs will separate. With continuous accumulation, the Schottky barrier is overcome, and electrons are injected into Au, causing the work function of Au to change. Therefore, there is a work function difference between the Au in the illuminated part and the shadow part, which in turn generates a potential difference. Due to the existence of the potential difference, electrons are directly transferred from the high potential part of the illuminated area to the shadow part, thereby generating an adjustable photovoltage. The Kelvin probe force microscopy (KPFM) was used to characterize Pt / n-Si under dark and illuminated conditions. ( Figure 2a and b), the surface potential of Pt / n-Si under illumination is higher than that in the shadow area. In the dark, the average surface potential of the Pt film is about 380mV, while under illumination, the potential distribution increases to about 620mV, confirming the generation of the shadow effect. Therefore, Pt / n-Si can be used as a photosensitive grid to build an OPECT sensor under indoor shadow conditions. The light source used is a xenon lamp with a wavelength range of 300-800nm ​​and a light intensity of one sun (i.e. 1000W / m 2 ).

[0046] (2) Construction of OPECT device:

[0047] A quartz glass substrate (1.5×1.5cm, thickness of about 0.1cm) was placed in DI water, anhydrous ethanol, isopropanol and acetone for ultrasonic treatment for 15 minutes, and then ozone plasma treatment was performed. The power used for the treatment was 150w and the time was 15 minutes. Titanium (10nm) and gold (100nm) were then sputtered onto the glass substrate in sequence to form source and drain electrodes. The channel length of the resulting device was 0.2mm and the width was 6.0mm. The specific channel structure is as follows Figure 3 As shown, the two white rectangles with a length of 7 mm and a width of 2.5 mm at the top are the source and drain electrodes, the two white rectangles with a length of 11.5 mm and a width of 1 mm in the middle are the channels, and the subsequent semiconductor film is spin-coated on the channels, while the remaining green part is the glass substrate. Next, a PEDOT:PSS solution (solid content of 1.3 wt%) containing 5.0% v / v dimethyl sulfoxide (DMSO) and 1.0% v / v (3-glycidyloxypropyl) trimethoxysilane (GOPS) is spin-coated on the channels at a speed of 3000 rpm. Finally, the sample is placed in an argon atmosphere and heated to 180°C in a glove box for 60 minutes.

[0048] (3) Construction of OPECT sensor based on shadow effect Pt / n-Si gate:

[0049] 0.1M HRP (horseradish peroxide) and 0.1M GOX (glucose oxidase) were mixed in a volume ratio of 1:1, and then 40 μL was added to the surface of the gate electrode in step (1), and incubated overnight at 4°C in a refrigerator. The modified electrode was then immersed in a phosphate buffer solution (PH = 7.4) to remove physically adsorbed GOX and HRP, and an HRP@GOX / Pt / n-Si composite gate electrode was prepared, which was then integrated with an OPECT device to obtain an organic photoelectrochemical transistor sensor (OPECT sensor) based on a shadow effect Pt / n-Si gate.

[0050] The structure of the prepared OPECT sensor is as follows: Figure 4As shown, the HRP@GOX / Pt / n-Si composite electrode is used as the gate, and the OPECT device prepared in step (2) is simultaneously inserted into an electrolytic cell containing an electrolyte solution (PBS solution) ( Figure 4 The white Gate in the middle) is set up, and the light path is set up. At the same time, the channel of the OPECT device is also immersed in PBS (such as Figure 4 ).

[0051] At the same time, the prepared HRP@GOX / Pt / n-Si electrode was used as the gate and inserted into an electrolytic cell containing an electrolyte solution (PBS solution) together with the OPECT device. A xenon lamp (wavelength range is 300-800nm) was used for illumination. The illumination intensity was adjusted to one sun, the source-drain voltage was set to 0.1V, and the gate voltage was set to 0V. Then, the gate PEC signal and the OPECT signal were collected respectively. Figure 5 As shown, the red curve is the gate signal of PEC, and the current change value under light is only close to 2.2μA, while the blue curve is the channel current response of OPECT, which has a change value of close to 3.3mA under light. It can be seen that the signal value of OPECT is greatly improved compared with PEC.

[0052] Example 2: OPECT sensor based on shadow effect Pt / n-Si gate for glucose determination

[0053] Before the measurement, the prepared HRP@GOX / Pt / n-Si photosensitive gate was washed with deionized water and its effective area was 0.6 cm 2 When measuring glucose concentration, 20 μL of PBS (0.1 M, pH 7.4) containing the glucose to be measured and 1 mM 4-CN (which undergoes a cascade catalytic reaction with HRP and GOX) was dropped onto HRP@GOX / Pt / n-Si, and the titrated solution was incubated at room temperature for 60 minutes to form an insoluble precipitate on the modified electrode surface. Subsequently, the prepared electrode was washed with a washing buffer PBS (0.1 M, pH 7.4).

[0054] The electrode modified with the glucose concentration to be tested was used as the gate electrode of OPECT and was immersed in PBS solution together with the source and drain of the OPECT device. Then, the electrochemical experiment was carried out by a CHI 1010C workstation. The light source used was a xenon lamp light source system (the light source used was a xenon lamp with a wavelength range of 300-800nm ​​and a light intensity of one sun, i.e. 1000W / m 2), turn on the light source and connect the electrochemical workstation, and monitor the signal in real time through the current-time (It) curve. When the photocurrent signal is stable, set the source-drain voltage of the OPECT system to 0.1V and the gate voltage to 0V (zero gate voltage operation), start irradiating the electrode and monitor the OPECT signal. First, establish a standard curve based on the relationship between different concentrations of glucose and the corresponding OPECT signal intensity, and then quantitatively detect the concentration of the glucose to be tested based on the standard curve.

[0055] According to the above determination method, 20 μL of PBS (0.1 M, pH 7.4) solution containing different concentrations of glucose (6 groups ranging from 0.1 μM to 0.01 M) and 1 mM 4-CN was used as the test sample standard curve. Figure 6 It can be seen that as the glucose concentration increases from 0.1μM to 0.01M, the response of the OPECT channel current decreases, and the response time of the test is about 50 seconds. Figure 7 The established glucose standard curve shows that its correlation coefficient is 0.994 and the linear range is 10 -7 M~10 -2 M, detection limit is 10 -7 M (greater than three times the noise signal). When 20 μL of 0.01 M glucose was added, the channel current change of OPECT was detected as follows Figure 8 As shown, the difference between the two curves is about 1.05 mA, and the response value ΔI / I0 is about 0.362, where ΔI is the difference between the two curves, and I0 is the OPECT signal current change value generated by the original electrode that has not been modified with glucose. The ΔI / I0 calculated using the glucose standard curve is 0.355, which is highly consistent.

[0056] In addition, the selectivity test of OPECT sensor was carried out to characterize the selectivity of Pt / n-Si based OPECT biosensor for glucose detection against biological interferences, including glucose (GLU), ascorbic acid (AA), lactic acid (LA), uric acid (UA) and dopamine (DA), all at a concentration of 0.01 M. Fig. 9 As shown, only glucose (GLU) caused a significant IDS change of the device, and ΔI / I0 was approximately ten times that of other interferences, indicating that the prepared Pt / n-Si based OPECT system has excellent selectivity for biomolecules (GLU).

[0057] In summary, the present invention uses Pt / n-Si with shadow effect as the photosensitive gate material to construct a sensitive OPECT sensing platform. The prepared OPECT sensor has the advantages of high sensitivity, high selectivity, wide measurement range, low energy consumption, etc., and can achieve the purpose of rapid quantitative detection of glucose. It has good development prospects in the fields of nucleic acid detection, enzyme biosensor, immunoassay, etc.

[0058] The embodiments of the present invention are described in detail above, but the present invention is not limited to the described embodiments. For those skilled in the art, various changes, modifications, substitutions and variations of these embodiments are made without departing from the principles and spirit of the present invention, and still fall within the protection scope of the present invention.

Claims

1. An organic photoelectrochemical transistor sensor based on a shadow effect Pt / n-Si gate, characterized in that: The organic photoelectrochemical transistor sensor includes a Pt / n-Si photosensitive gate based on the shadow effect and an organic photoelectrochemical transistor, wherein the Pt / n-Si gate is modified with glucose oxidase and hydrogen peroxide horseradish enzyme, and the organic photoelectrochemical transistor includes an electrolyte solution, a source electrode and a drain electrode with a gap in between, and an organic semiconductor film covering the source and drain electrodes.

2. The organic photoelectrochemical transistor sensor based on the shadow effect Pt / n-Si gate according to claim 1, characterized in that: The electrolyte solution includes PBS solution.

3. The method for preparing an organic photoelectrochemical transistor sensor based on a shadow effect Pt / n-Si gate according to claim 1 or 2, characterized in that: The following steps are involved: S1. Preparation and modification of Pt / n-Si photosensitive gate: Platinum is deposited on the surface of N-type silicon to form a Pt / N-Si photosensitive gate, and then a mixture of hydrogen peroxide horseradish enzyme and glucose oxidase is added to the electrode surface and incubated at low temperature for 6-10 hours, and then the modified electrode is immersed in a phosphate buffer solution to remove the physically adsorbed hydrogen peroxide horseradish enzyme and glucose oxidase, and the result is obtained; S2. Preparation of organic photoelectrochemical transistor: titanium and gold are sputtered onto a glass substrate in sequence to form a source electrode and a drain electrode with a gap in between, and then coated with an organic semiconductor thin film layer to obtain; S3. Insert the Pt / n-Si photosensitive gate of S1 and the organic photoelectrochemical transistor of S2 into the electrolyte solution at the same time, thus forming an organic photoelectrochemical transistor sensor based on the shadow effect Pt / n-Si gate.

4. The method for preparing an organic photoelectrochemical transistor sensor based on a shadow effect Pt / n-Si gate according to claim 3, characterized in that: In S1, the thickness of platinum deposited on the silicon surface is 15-30 nm, the power used is 70-90 W, and the time is 20-50 S.

5. The method for preparing an organic photoelectrochemical transistor sensor based on a shadow effect Pt / n-Si gate according to claim 3, characterized in that: In S1, the mixed solution containing hydrogen peroxide horseradish enzyme and glucose oxidase is a mixed solution prepared by 0.05-0.3M hydrogen peroxide horseradish enzyme and 0.05-0.3M glucose oxidase in a volume ratio of 1:

1.

6. The method for preparing an organic photoelectrochemical transistor sensor based on a shadow effect Pt / n-Si gate according to claim 3, characterized in that: In S2, the material of the organic semiconductor thin film layer is poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, and the thickness thereof is 100-150 nm. The organic semiconductor thin film layer is prepared by spin coating, and after spin coating, the layer is kept at 170-190° C. for 50-70 minutes in an inert gas atmosphere.

7. The method for preparing an organic photoelectrochemical transistor sensor based on a shadow effect Pt / n-Si gate according to claim 3, characterized in that: In S2, the thicknesses of titanium and gold are 7-20 nm and 80-120 nm, respectively.

8. Use of the organic photoelectrochemical transistor sensor based on the shadow effect Pt / n-Si gate as claimed in claim 1 or 2 in the quantitative detection of glucose.

9. The use according to claim 8, characterized in that: The detection method specifically includes the following steps: S1. A series of glucose solutions with known concentrations and 1 mM 4-chloro-1-naphthol are added dropwise onto the Pt / n-Si gate, and an insoluble precipitate is formed on the electrode surface after incubation. Then, the gate and the source and drain of the organic photoelectrochemical transistor are immersed in the electrolyte solution together, the source meter is turned on, the gate voltage is set to 0 V, and the It curve is tested for real-time monitoring. After the current is balanced, the light source is turned on, and the response current under illumination is tested. A standard curve is established according to the relationship between different concentrations of glucose and the corresponding response current; S2. Add the glucose solution of the concentration to be tested and 1 mM 4-chloro-1-naphthol to the Pt / n-Si gate, and incubate to form an insoluble precipitate on the electrode surface. Then immerse the gate and the source and drain of the organic photoelectrochemical transistor in the electrolyte solution. Turn on the source meter, set the gate voltage to 0 V, test the It curve for real-time monitoring, turn on the light source after the current is balanced, test the response current under light, and substitute it into the standard curve of S1 to obtain the concentration of glucose to be tested.

10. The use according to claim 9, characterized in that: The light source used is a xenon lamp with a wavelength range of 300-800nm ​​and a light intensity of one sun.

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