Preparation method of crystalline silicon perovskite laminated cell

Abstract

The invention discloses a preparation method of a crystalline silicon perovskite laminated cell, and belongs to the technical field of solar cells, and the method comprises the following steps: S1, taking a perovskite solar cell as a top cell, taking a crystalline silicon solar cell as a bottom cell, sputtering a composite layer on the crystalline silicon solar cell, and enabling the composite layer to be used for connecting the top cell and the bottom cell in series; s2, preparing a metal oxide modified layer on the composite layer; s3, spin-coating an SAMs hole transport layer on the metal oxide modified layer; by preparing the metal oxide modified layer, the adsorption of the SAMs hole transport layer on the composite layer is promoted, tridentate coordination is formed with the substrate, and the problem of poor wettability of the SAMs material is improved; in addition, the passivation capability and hole selectivity of SAMs can be simultaneously improved through metal oxide modification, favorable energy level alignment is provided between the composite layer and the perovskite absorption layer, and direct contact between the composite layer and the perovskite absorption layer is prevented. According to the method, the preparation of perovskite is more stable, and meanwhile, the photoelectric conversion efficiency of the whole laminated cell is greatly improved.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and more specifically, to a method for preparing a crystalline silicon perovskite stacked cell. Background Art

[0002] Crystalline silicon perovskite tandem cells are a new type of solar cell that combines the advantages of both crystalline silicon cells and perovskite cells. By connecting the perovskite top cell with an adjustable bandgap in series with the crystalline silicon bottom cell, it achieves the absorption of sunlight with a wider wavelength range and reduces photon thermal loss, thus breaking through the theoretical efficiency limit of single-junction solar cells. Crystalline silicon solar cells dominate the photovoltaic module market with their mature manufacturing process, excellent long-term stability and abundant raw materials.

[0003] Self-assembled monolayers (SAMs) have become an excellent choice for hole transport layers in high-efficiency perovskite solar cells due to their unique interface properties and simple processing methods. However, defects and pinholes generated during their adsorption process on crystalline silicon cells inevitably lead to a decrease in the uniformity of perovskite film formation and the final device efficiency.

[0004] To this end, a method for preparing a crystalline silicon perovskite tandem cell is proposed. Summary of the invention

[0005] In view of the problems existing in the prior art, the purpose of the present invention is to provide a method for preparing a crystalline silicon perovskite tandem cell, which can solve the defect of poor wettability of the SAMs layer on the crystalline silicon cell in the existing crystalline silicon perovskite tandem cell.

[0006] To solve the above problems, the present invention adopts the following technical solutions.

[0007] A method for preparing a crystalline silicon perovskite stacked cell, the crystalline silicon perovskite stacked cell comprises, from top to bottom, a front metal grid electrode, an anti-reflection film layer, a transparent conductive film layer, a buffer protection layer, an electron transport layer, a passivation layer, a perovskite absorption layer, a SAMs hole transport layer, a metal oxide modified layer, a composite layer, a crystalline silicon bottom cell and a back electrode; comprising the following steps:

[0008] S1. Using a perovskite solar cell as a top cell and a crystalline silicon solar cell as a bottom cell, sputtering a composite layer on the crystalline silicon solar cell, the composite layer is used to connect the top cell and the bottom cell in series;

[0009] S2, preparing a metal oxide modified layer on the composite layer;

[0010] S3, spin coating a SAMs hole transport layer on the metal oxide modified layer;

[0011] S4, spin coating a perovskite absorption layer on the SAMs hole transport layer;

[0012] S5, evaporating a passivation layer on the perovskite absorption layer;

[0013] S6, evaporating an electron transport layer on the passivation layer;

[0014] S7, atomic layer deposition of a buffer protection layer on the electron transport layer;

[0015] S8, magnetron sputtering a transparent conductive thin film layer on the buffer protection layer;

[0016] S9, thermally evaporating an anti-reflection thin film layer on the transparent conductive thin film layer;

[0017] S10, screen printing is performed on the ITO at the bottom of the crystalline silicon solar cell to prepare a metal electrode Ag, and screen printing is performed on the anti-reflection film layer to prepare a metal grid line electrode.

[0018] Furthermore, the band gap of perovskite solar cells is 1.65eV-1.75eV.

[0019] Further, the thickness of the composite layer is 5nm-40nm;

[0020] The thickness of the metal oxide modified layer is 5-20 nm; the metal oxide modified layer used is a nickel oxide, aluminum oxide or zinc oxide metal oxide modified layer;

[0021] The thickness of the SAMs hole transport layer is 5nm-30nm.

[0022] Further, the thickness of the perovskite absorption layer is 600nm-1μm;

[0023] The thickness of the passivation layer is 1-5nm;

[0024] The thickness of the electron transport layer is 5-30nm;

[0025] The thickness of the buffer protection layer is 5-20nm;

[0026] The thickness of the transparent conductive film layer is 40nm-200nm;

[0027] The thickness of the antireflection film layer is 100-200nm.

[0028] Further, the metal grid line electrode is a front metal grid line silver electrode;

[0029] The anti-reflection film layer is a MgF2 or LiF anti-reflection film layer;

[0030] The transparent conductive film layer is an ITO, IZO, AZO or FTO transparent conductive film layer.

[0031] Furthermore, the buffer protective layer is a SnO2 buffer protective layer;

[0032] The electron transport layer is SnO2, C 60 or PCBM electron transport layer;

[0033] The passivation layer is LiF, PI, PEAI passivation layer;

[0034] The SAMs hole transport layer is a hole transport layer containing phosphate groups such as Meo-2PACz or Me-4PAC;

[0035] The composite layer is ITO, IZO or VTTO.

[0036] Furthermore, the metal oxide modified layer is prepared by solution spin coating, electron beam evaporation, magnetron sputtering or atomic layer deposition.

[0037] Furthermore, the concentration of the solution of the perovskite absorption layer is 1.7 M, and the composition of the solution of the perovskite absorption layer is Cs 0.21 FA 0.79 Pb(I 0.83 Br 0.17 )3.

[0038] A perovskite solar cell with a wide band gap of 1.65eV-1.75eV is used as the top cell, and a crystalline silicon solar cell with a narrow band gap is used as the bottom cell. The top cell and the bottom cell are connected in series through a tunnel junction or a composite layer. At the same time, a metal oxide modified layer is prepared to promote the adsorption of the SAMs hole transport layer on the composite layer, forming a tridentate coordination with the substrate, and improving the problem of poor wettability of the SAMs material. In addition, metal oxide modification can simultaneously improve the passivation ability and hole selectivity of SAMs, provide a favorable energy level alignment between the composite layer and the perovskite absorption layer, and prevent the two from direct contact. This method makes the preparation of perovskite more stable, and at the same time the photoelectric conversion efficiency of the entire stacked cell is greatly improved.

[0039] Compared with the prior art, the present invention has the following beneficial effects:

[0040] This scheme promotes the adsorption of the SAMs hole transport layer on the composite layer by preparing a metal oxide modified layer, forming a tridentate coordination with the substrate, and improving the poor wettability of the SAMs material. In addition, metal oxide modification can simultaneously improve the passivation ability and hole selectivity of SAMs, provide a favorable energy level alignment between the composite layer and the perovskite absorption layer, and prevent direct contact between the two. This method makes the preparation of perovskite more stable, and at the same time the photoelectric conversion efficiency of the entire stacked battery is greatly improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 It is a schematic diagram of the structure of the crystalline silicon perovskite tandem battery of the present invention. DETAILED DESCRIPTION

[0042] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention; it is obvious that the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments, and all other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making creative work are within the scope of protection of the present invention.

[0043] Embodiment 1:

[0044] See also Figure 1 , a method for preparing a crystalline silicon perovskite stacked cell, the crystalline silicon perovskite stacked cell comprises, from top to bottom, a front metal grid electrode, an anti-reflection film layer, a transparent conductive film layer, a buffer protection layer, an electron transport layer, a passivation layer, a perovskite absorption layer, a SAMs hole transport layer, a metal oxide modified layer, a composite layer, a crystalline silicon bottom cell and a back electrode; comprising the following steps:

[0045] S1, using a perovskite solar cell with a band gap of 1.65eV-1.75eV as a top cell and a crystalline silicon solar cell as a bottom cell, sputtering a composite layer on the crystalline silicon solar cell, the composite layer being used to connect the top cell and the bottom cell in series;

[0046] S2, preparing a metal oxide modified layer on the composite layer;

[0047] S3, spin coating a SAMs hole transport layer on the metal oxide modified layer; the thickness of the SAMs hole transport layer is 5nm-30nm;

[0048] S4, spin coating a perovskite absorption layer on the SAMs hole transport layer, wherein the thickness of the perovskite absorption layer is 600nm-1μm;

[0049] S5, evaporating a passivation layer on the perovskite absorption layer, the thickness of the passivation layer is 1-5 nm;

[0050] S6, evaporating an electron transport layer on the passivation layer, wherein the thickness of the electron transport layer is 5-30 nm;

[0051] S7, atomically depositing a buffer protection layer on the electron transport layer, wherein the thickness of the buffer protection layer is 5-20 nm;

[0052] S8. magnetron sputtering a transparent conductive film layer on the buffer protection layer; the thickness of the transparent conductive film layer is 40nm-200nm

[0053] S9, thermally evaporate an anti-reflection film layer on the transparent conductive film layer; the thickness of the anti-reflection film layer is 100-200nm

[0054] S10, screen printing is performed on the ITO at the bottom of the crystalline silicon solar cell to prepare a metal electrode Ag, and screen printing is performed on the anti-reflection film layer to prepare a metal grid line electrode.

[0055] Furthermore, the thickness of the composite layer is 5nm-40nm; the thickness of the metal oxide modified layer is 5-20nm, and the metal oxide modified layer used is a nickel oxide, aluminum oxide or zinc oxide metal oxide modified layer;

[0056] Further, the metal grid line electrode is a front metal grid line silver electrode;

[0057] The anti-reflection film layer is a MgF2 or LiF anti-reflection film layer;

[0058] The transparent conductive film layer is an ITO, IZO, AZO or FTO transparent conductive film layer.

[0059] Furthermore, the buffer protective layer is a SnO2 buffer protective layer;

[0060] The electron transport layer is SnO2, C 60 or PCBM electron transport layer;

[0061] The passivation layer is LiF, PI, PEAI passivation layer;

[0062] The SAMs hole transport layer is a hole transport layer containing phosphate groups such as Meo-2PACz or Me-4PAC;

[0063] The composite layer is ITO, IZO or VTTO.

[0064] Furthermore, the metal oxide modified layer is prepared by solution spin coating, electron beam evaporation, magnetron sputtering or atomic layer deposition.

[0065] Furthermore, the concentration of the solution of the perovskite absorption layer is 1.7 M, and the composition of the solution of the perovskite absorption layer is Cs 0.21 FA 0.79 Pb(I 0.83 Br 0.17 )3.

[0066] Usage: A perovskite solar cell with a wide band gap of 1.65eV-1.75eV is used as the top cell, and a crystalline silicon solar cell with a narrow band gap is used as the bottom cell, and the top cell and the bottom cell are connected in series through a tunnel junction or a composite layer. At the same time, a metal oxide modified layer is prepared to promote the adsorption of the SAMs hole transport layer on the composite layer, forming a tridentate coordination with the substrate, and improving the problem of poor wettability of the SAMs material. In addition, metal oxide modification can simultaneously improve the passivation ability and hole selectivity of SAMs, provide a favorable energy level alignment between the composite layer and the perovskite absorption layer, and prevent the two from direct contact. This method makes the preparation of perovskite more stable, and at the same time the photoelectric conversion efficiency of the entire stacked cell is greatly improved.

[0067] The above is only a preferred specific implementation of the present invention; however, the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical solution and its improved conception within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A method for preparing a crystalline silicon perovskite tandem battery, characterized in that: The steps include: S1, using a perovskite solar cell as a top cell and a crystalline silicon solar cell as a bottom cell, sputtering a composite layer on the crystalline silicon solar cell, wherein the composite layer is used to connect the top cell and the bottom cell in series; S2, preparing a metal oxide modified layer on the composite layer in S1; S3, spin coating a SAMs hole transport layer on the metal oxide modified layer; S4, spin coating a perovskite absorption layer on the SAMs hole transport layer; S5, evaporating a passivation layer on the perovskite absorption layer; S6, evaporating an electron transport layer on the passivation layer; S7, atomic layer deposition of a buffer protection layer on the electron transport layer; S8, magnetron sputtering a transparent conductive thin film layer on the buffer protection layer; S9, thermally evaporating an anti-reflection thin film layer on the transparent conductive thin film layer; S10, screen printing is performed on the ITO at the bottom of the crystalline silicon solar cell to prepare a metal electrode Ag, and screen printing is performed on the anti-reflection film layer to prepare a metal grid line electrode.

2. The method for preparing a crystalline silicon perovskite tandem battery according to claim 1, characterized in that: The band gap of the perovskite solar cell is 1.65eV-1.75eV.

3. The method for preparing a crystalline silicon perovskite tandem battery according to claim 2, characterized in that: The thickness of the composite layer is 5nm-40nm; The thickness of the metal oxide modified layer is 5-20 nm; The thickness of the SAMs hole transport layer is 5nm-30nm.

4. The method for preparing a crystalline silicon perovskite tandem battery according to claim 3, characterized in that: The thickness of the perovskite absorption layer is 600nm-1μm; The thickness of the passivation layer is 1-5 nm; The thickness of the electron transport layer is 5-30 nm; The thickness of the buffer protection layer is 5-20nm; The thickness of the transparent conductive film layer is 40nm-200nm; The thickness of the antireflection film layer is 100-200 nm.

5. The method for preparing a crystalline silicon perovskite tandem battery according to claim 4, characterized in that: The metal grid line electrode is a front metal grid line silver electrode; The anti-reflection thin film layer is a MgF2 anti-reflection thin film layer; The transparent conductive film layer is an ITO transparent conductive film layer.

6. The method for preparing a crystalline silicon perovskite tandem battery according to claim 5, characterized in that: The buffer protective layer is a SnO2 buffer protective layer; The electron transport layer is C 60 Electron transport layer; The passivation layer is a LiF, PI, or PEAI passivation layer; The SAMs hole transport layer is a Meo-2PACz hole transport layer containing phosphoric acid groups; The composite layer is ITO.

7. The method for preparing a crystalline silicon perovskite tandem battery according to claim 6, characterized in that: The preparation method of the metal oxide modified layer is atomic layer deposition.

8. The method for preparing a crystalline silicon perovskite tandem battery according to claim 7, characterized in that: The concentration of the solution of the perovskite absorption layer is 1.7M, and the composition of the solution of the perovskite absorption layer is Cs 0.21 FA 0.79 Pb(I 0.83 Br 0.17 )3.

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