Gas spray header, vapor deposition equipment and use method of vapor deposition equipment

Abstract

The invention discloses a gas spray head, vapor deposition equipment and a use method thereof, and the gas spray head comprises a gas distribution plate which is provided with a first conveying channel and a second conveying channel which are alternately arranged and concentrically arranged; a first gas communicating channel on the cover plate crosses the second conveying channel to communicate two adjacent first conveying channels; the second gas communicating channel crosses the first conveying channel to communicate two adjacent second conveying channels; the first inlet end of the first conveying channel is used for conveying first gas; the first low-pressure source is used for providing low pressure to the first outlet end; the second inlet end is used for conveying second gas; the second low-pressure source is used for providing low pressure to the second outlet end; air holes are formed below the first conveying channel and the second conveying channel. The gas spray head provided by the invention not only can be quickly ventilated to prevent two reaction gases from being mixed in the gas spray head, but also can provide uniform reaction gases for a substrate.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a gas shower head, a vapor deposition device and a use method thereof. Background Art

[0002] Growing thin films on the substrate surface using vapor deposition technology under vacuum conditions is an important way to obtain thin film materials with excellent mechanical properties and special physical / chemical properties. It is a research hotspot in the fields of materials science and physical science today.

[0003] ALD (Atomic Layer Deposition) technology is one of the most widely used thin film growth technologies. It is essentially a type of chemical vapor deposition (CVD). It mainly forms a deposited film by alternately passing gaseous precursor pulses into the reactor and adsorbing them on the deposition substrate and using chemical reactions between atoms to react. Compared with thin film preparation methods such as chemical vapor deposition and physical vapor deposition (PVD), ALD has significant advantages in the conformality and uniformity of the grown film due to its unique reaction mechanism.

[0004] During the atomic layer deposition process, different gas precursors are required to be alternately introduced into the processing chamber containing the substrate through the gas shower head in the gas deposition equipment; and a uniform reaction gas needs to be provided to the substrate. In addition, in the gas shower head, in order to achieve rapid switching of gas precursors and prevent different gas precursors from mixing in the gas shower head, it is necessary to quickly remove the gas precursors remaining in the gas shower head. However, in the prior art, due to the complex structure of the gas channel in the gas shower head, the flow of the residual gas precursor in the gas shower head is slow, and it is difficult to quickly remove the residual gas precursor, resulting in the formation of deposits on the surface of the gas shower head or in the shower hole. Summary of the invention

[0005] The object of the present invention is to provide a gas shower head, a vapor deposition device and a method of using the same, so as to achieve rapid switching of vapor precursors while avoiding mixing of different precursors in the gas shower head and provide a uniform gas supply source for a substrate.

[0006] In order to achieve the above objectives, the present invention is implemented by the following technical solutions:

[0007] A gas shower head, characterized in that it comprises: a gas distribution plate, on which a gas delivery channel is provided, the gas delivery channel comprises a plurality of first delivery channels and a plurality of second delivery channels, the plurality of first delivery channels and the plurality of second delivery channels are alternately arranged and concentrically arranged; a cover plate, which covers the gas distribution plate, on which a gas communication channel is provided, the gas communication channel comprises a plurality of first gas communication channels and a plurality of second gas communication channels; the first gas communication channel crosses the second delivery channel to connect two adjacent first delivery channels; the second gas communication channel crosses the first delivery channel to connect two adjacent second delivery channels; a first inlet end connected to the first delivery channel is used to deliver a first gas into the first delivery channel; a first low-pressure source is connected to a first outlet end of the first delivery channel, and is used to provide a low pressure at the first outlet end; a second inlet end connected to the second delivery channel is used to deliver a second gas into the second delivery channel; a second low-pressure source is connected to a second outlet end of the second delivery channel, and is used to provide a low pressure at the second outlet end; a plurality of air holes are provided below the first delivery channel and the second delivery channel, and the air holes are used to supply a reaction gas to the surface of a substrate to be processed.

[0008] Optionally, a circular groove is provided at the center of the top surface of the gas distribution plate, a plurality of annular grooves are provided around the circular groove, and the cover plate covers the top surface of the gas distribution plate.

[0009] Optionally, the first gas communication channel and the second gas communication channel are respectively arranged and distributed along the radial direction of the cover plate.

[0010] Optionally, the first gas communication channel and the second gas communication channel are arranged in directions perpendicular to each other.

[0011] Optionally, each of the gas delivery channels comprises an inlet and an outlet; the outlet of one of two adjacent first delivery channels is connected to the inlet of the other; and the outlet of one of two adjacent second delivery channels is connected to the inlet of the other.

[0012] Optionally, it further includes: an inclined partition wall is also provided in each of the annular grooves, and the partition wall divides the corresponding annular groove into two non-connected parts.

[0013] Optionally, each of the gas delivery channels includes an inlet and an outlet respectively located on both sides of the partition wall; the outlet of one of the two adjacent first delivery channels is connected to the inlet of the other through the first gas connecting channel, so that the first gas diffuses in a spiral shape toward the first outlet end; the outlet of one of the two adjacent second delivery channels is connected to the inlet of the other through the second gas connecting channel, so that the second gas diffuses in a spiral shape toward the second outlet end.

[0014] Optionally, a tangent line at a connection point between the partition wall and the outer side wall of the corresponding annular groove forms an angle with the partition wall, and the angle ranges from 15° to 45°.

[0015] Optionally, the partition walls in the first conveying channel are arranged in a spiral pattern; and the partition walls in the second conveying channel are arranged in a spiral pattern.

[0016] Optionally, the plurality of first gas communication channels are arranged in a spiral pattern on the cover plate; and the plurality of second gas communication channels are arranged in a spiral pattern on the cover plate.

[0017] Optionally, the gas communication channel includes an inlet hole and an outlet hole, the inlet hole is connected to the outlet of the corresponding gas delivery channel, and the outlet hole is connected to the inlet of the corresponding gas delivery channel.

[0018] Optionally, the inlet hole and the outlet hole extend along the circumference of the corresponding gas delivery channel respectively.

[0019] Optionally, the circumferential length of the inlet hole of the gas communicating channel is not less than the radial width of the outlet of the corresponding gas delivery channel; the circumferential length of the outlet hole of the gas communicating channel is not less than the radial width of the inlet of the corresponding gas delivery channel.

[0020] Optionally, the inlet of the first conveying channel located at the outermost side serves as one of the first inlet end and the first outlet end, and the outlet of the first conveying channel located at the innermost side serves as the other of the first inlet end and the first outlet end; the inlet of the second conveying channel located at the outermost side serves as one of the second inlet end and the second outlet end, and the outlet of the second conveying channel located at the innermost side serves as the other of the second inlet end and the second outlet end.

[0021] Optionally, the first low-pressure source and the second low-pressure source both include air valves for controlling the suction force of the low-pressure sources.

[0022] Optionally, an annular seal is provided around the periphery of each groove.

[0023] On the other hand, the present invention provides a vapor deposition device, comprising: a reaction chamber; a base, which is arranged at the inner bottom of the reaction chamber and is used to support a substrate; and a gas shower head as described above, which is arranged at the top of the reaction chamber and is arranged opposite to the base, and is used to provide reaction gas to the surface of the substrate.

[0024] On the other hand, the present invention also provides a method for using the vapor deposition equipment as described above, including: step a, introducing a first reaction gas into the first delivery channel, and the second low-pressure source is in a closed state; step b, stopping the introduction of the first reaction gas, introducing a purge gas into the first delivery channel, and the first low-pressure source is in an open state; step c, closing the first low-pressure source, and introducing a second reaction gas into the second delivery channel; step d, stopping the introduction of the second reaction gas, introducing a purge gas into the second delivery channel, and the second low-pressure source is in an open state; repeating steps a to d.

[0025] Optionally, the method further includes: while executing step a, opening the first low-pressure source; while executing step c, opening the second low-pressure source.

[0026] Optionally, the method further includes: introducing a purge gas into the second delivery channel while executing step a; and introducing a purge gas into the first delivery channel while executing step c.

[0027] Optionally, when executing step b, the opening of the gas valve of the first low-pressure source is gradually increased from a small opening to a large opening; when executing step d, the opening of the gas valve of the second low-pressure source is gradually increased from a small opening to a large opening.

[0028] The present invention has at least one of the following advantages:

[0029] A gas shower head provided by the present invention realizes that different precursors are not mixed in the gas shower head through the first delivery channel and the second delivery channel, and quickly degasses the inside of the gas shower head through the low-pressure source. After the reaction gas enters the first delivery channel or the second delivery channel, it diffuses to both sides of the first delivery channel or the second delivery channel at the same time, and has the characteristics of low flow resistance, low pressure drop, and uniform gas distribution.

[0030] The arrangement directions of the first gas connecting channel and the second gas connecting channel provided by the present invention are perpendicular to each other, which reduces the difficulty of process manufacturing.

[0031] The inlet and outlet holes of the first / second gas communication channel provided by the present invention extend along the circumference of the corresponding first / second delivery channel, respectively. Preferably, the circumferential length of the inlet hole of the first / second gas communication channel is not less than the radial width of the outlet of the corresponding first / second delivery channel; the circumferential length of the outlet hole of the first / second gas communication channel is not less than the radial width of the inlet of the corresponding first / second delivery channel. In this way, the flow resistance of the gas at the inlet and outlet holes is further reduced, and a smooth transition of the gas in the gas communication channel is achieved.

[0032] When the gas shower head provided by the present invention includes multiple partition walls, and the tangent line at the connection point between the partition wall and the outer wall of the corresponding annular groove forms an angle with the partition wall, preferably, the angle range is 15° to 45°, thereby achieving further reduction of the flow resistance of the gas at the inlet and outlet holes, and achieving smooth transition of the gas in the gas connecting channel.

[0033] The present invention provides a seal around each of the annular grooves, thereby preventing the gases in the first delivery channel and the second delivery channel from penetrating and mixing with each other. The annular groove reduces the process difficulty of setting the seal.

[0034] The method for using the vapor deposition device provided by the present invention can quickly remove the residual reaction gas in the delivery channel by introducing a purge gas into the delivery channel and evacuating the channel at the same time, thereby preventing the two reaction gases from reacting. Introducing the reaction gas into the delivery channel and evacuating the channel at the same time can help the reaction gas to quickly and evenly diffuse in the delivery channel. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A schematic structural diagram of a vapor deposition device provided by one embodiment of the present invention;

[0036] Figure 2 A schematic diagram of a first gas flow path in a first delivery channel in a gas distribution plate provided in one embodiment of the present invention;

[0037] Figure 3 A schematic diagram of a second gas flow path in a second delivery channel in a gas distribution plate provided in one embodiment of the present invention;

[0038] Figure 4 A top view of a gas distribution plate provided in accordance with an embodiment of the present invention;

[0039] Figure 5 A bottom view of a gas distribution plate provided in accordance with an embodiment of the present invention;

[0040] Figure 6 A bottom view of a cover plate provided in one embodiment of the present invention;

[0041] Figure 7 A schematic diagram of the three-dimensional structure of a gas shower head provided in one embodiment of the present invention;

[0042] Figure 8 An embodiment of the present invention provides an edge Figure 7 A schematic cross-sectional structure diagram of the gas shower head in the XX direction shown;

[0043] Fig. 9 An embodiment of the present invention provides an edge Figure 7 A schematic diagram of the cross-sectional structure of the gas shower head in the YY direction shown;

[0044] Fig.10 A top view of a gas distribution plate according to another embodiment of the present invention. DETAILED DESCRIPTION

[0045] The following is a further detailed description of the gas shower head, vapor deposition equipment and method of use of the present invention in conjunction with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will become clearer. It should be noted that the drawings are in a very simplified form and are not in precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects and purposes that can be achieved by the present invention, should still fall within the scope of the technical content disclosed by the present invention.

[0046] like Figure 1 As shown, a vapor deposition device provided in this embodiment includes: a reaction chamber 100; a base 400, which is arranged at the inner bottom of the reaction chamber 100 and is used to support a substrate 500; a gas shower head 300, which is arranged at the top of the reaction chamber 100, opposite to the base 400, and is used to provide reaction gas to the surface of the substrate 500. In this embodiment, the vapor deposition device includes but is not limited to an atomic layer deposition device. The reaction gas forms a deposition material layer on the surface of the substrate 500. A vacuum pump 200 is arranged around the gas shower head 300 to maintain the vacuum degree of the reaction chamber 100. The gas shower head of the vapor deposition device provided in this embodiment can achieve rapid switching of precursors while avoiding mixing of different precursors in the gas shower head, and provide a uniform gas supply source for the substrate.

[0047] In this embodiment, if Figure 2 and Figure 3 As shown, the gas shower head 300 includes: a gas distribution plate 301, on which a first delivery channel 320 and a second delivery channel 340 are provided; the first delivery channel 320 and the second delivery channel 340 are alternately arranged and concentrically arranged. Figure 2 As shown, it shows the transmission path of the first gas in the first delivery channel 320 (see Figure 2 in the direction indicated by the arrow); please continue to refer to Figure 3 The figure shows the transmission path of the second gas in the second delivery channel 340 (see Figure 3 direction indicated by the arrow).

[0048] like Figure 6 and Figure 7 As shown, the gas shower head 300 also includes: a cover plate 302, which covers the gas distribution plate 301, and a plurality of first gas connecting channels 312 and second gas connecting channels 341 are provided on the cover plate 302; the first gas connecting channel 312 is used to cross the second delivery channel 340 to connect two adjacent first delivery channels 320; the second gas connecting channel 341 is used to cross the first delivery channel 320 to connect two adjacent second delivery channels 340; the first inlet end 310 connected to the first delivery channel 320 is used to deliver the first gas into the first delivery channel 320. In this embodiment, the first gas is a first reaction gas or a purge gas. The first low-pressure source ( Figure 7 ), which is communicated with the first outlet end 311 of the first delivery channel 320, and is used to provide low pressure to the first outlet end 311 of the first delivery channel 320.

[0049] Preferably, in this embodiment or other embodiments, the first low-pressure source includes an air valve for controlling the suction force of the low-pressure source.

[0050] The second inlet port 343 connected to the second delivery channel 340 is used to deliver the second gas into the second delivery channel 340; in this embodiment, the second gas is a second reaction gas or a purge gas. Figure 7 ), which is communicated with the second outlet end 344 of the second delivery channel 340, and is used to provide low pressure to the second outlet end 344 of the second delivery channel 340.

[0051] Preferably, in this embodiment or other embodiments, the second low-pressure source includes an air valve for controlling the suction force of the low-pressure source.

[0052] like Figure 4 , 5As shown in FIGS. 8 and 9 , a plurality of air holes 342 are provided below the first delivery channel 320 and the second delivery channel 340 , and the air holes 342 are used to supply reaction gas to the surface of the substrate 500 to be processed.

[0053] In this embodiment, different precursors are not mixed in the gas shower head 300 by means of the first delivery channel 320 and the second delivery channel 340 (that is, the first delivery channel and the second delivery channel are not connected to each other and independently introduce corresponding gases into the substrate), and the first low-pressure source and the second low-pressure source are provided to quickly degas the inside of the gas shower head 300. After the reaction gas enters the first delivery channel 320 or the second delivery channel 340, it diffuses to both sides of the first delivery channel 320 or the second delivery channel 340. Therefore, the first delivery channel and the second delivery channel provided in this embodiment have the effects of low flow resistance, low pressure drop, and uniform gas distribution.

[0054] Please continue to refer to Figure 4 As shown, in this embodiment, a circular groove 330 is provided at the center of the top surface of the gas distribution plate 301, and a plurality of annular grooves 331 are provided around the circular groove 330. After the cover plate 302 is covered on the top surface of the gas distribution plate 301, the bottom surface of the cover plate 302, the circular groove 330 and the plurality of annular grooves 331 define the first delivery channel 320 and the second delivery channel 340. Figure 3 As shown, the circular groove 330 is a part of the second delivery channel 340. The first delivery channel 320 is composed of annular grooves 331, but the present invention is not limited thereto.

[0055] like Figure 6 As shown, a plurality of the first gas communication channels 312 and the second gas communication channels 341 are respectively arranged and distributed along the radial direction of the cover plate 302, and the first gas communication channels 312 and the second gas communication channels 341 are not connected. Optionally, the arrangement directions of the first gas communication channels 312 and the second gas communication channels 341 are perpendicular to each other, which is conducive to the arrangement of the pipeline on the top of the cover plate 302 and the low-pressure source.

[0056] Please continue to refer to Figure 2 As shown, each of the first delivery channels 320 includes an inlet and an outlet (the inlet and outlet can be seen in the attached Figure 2 The dotted arrow in the figure is located at the position of the exit, and the head of the dotted arrow is located at the entrance), the line between the entrance and the exit passes through the center of the first conveying channel 320, and the exit of one of the two adjacent first conveying channels 320 is connected to the entrance of the other first conveying channel 320.

[0057] Please continue to refer to Figure 3 As shown, each of the second delivery channels 340 includes an inlet and an outlet. The inlet and outlet of the second delivery channel 340 (the inlet and outlet can be seen in the attached Figure 3 The dotted arrow in the figure is located at the position of the exit, and the head of the dotted arrow is located at the entrance), the line between the entrance and the exit passes through the center of the second conveying channel 340, and the exit of one of the two adjacent second conveying channels 340 is connected to the entrance of the other second conveying channel 340.

[0058] Please continue to refer to Figure 2 As shown, the first gas communication channel 312 includes an inlet hole 3120 and an outlet hole 3121 , the inlet hole 3120 is connected to the outlet of the corresponding first delivery channel 320 , and the outlet hole 3121 is connected to the inlet of the corresponding first delivery channel 320 .

[0059] Please continue to refer to Figure 3 As shown, the second gas communication channel 340 includes an inlet hole 3410 and an outlet hole 3411 , the inlet hole 3410 is connected to the outlet of the corresponding second delivery channel 340 , and the outlet hole 3411 is connected to the inlet of the corresponding second delivery channel 340 .

[0060] The connecting line between the entrance and exit of each first delivery channel 320 provided in this embodiment passes through the center of the first delivery channel 320, and the exit of one of the two adjacent first delivery channels 320 is connected to the entrance of the other first delivery channel 320, thereby enabling the first gas to diffuse to both sides starting from the entrance of one first delivery channel 320, and then converge at the exit of this first delivery channel 320, and flow into the entrance of another first delivery channel 320 through the corresponding first gas connecting channel, and then diffuse to both sides from the entrance of the other first delivery channel 320, and repeat this process until the first gas diffuses to the exit of the last first delivery channel 320, i.e., the first exit end. It can be seen that this gas transmission method has the effects of low flow resistance, low pressure drop, and uniform gas distribution.

[0061] Please continue to refer to Figure 2 and Figure 6 As shown, the inlet hole 3120 and the outlet hole 3121 of the first gas communication channel 312 extend along the circumference of the corresponding first delivery channel 320 respectively.

[0062] Preferably, the circumferential length of the inlet hole 3120 is not less than the radial width of the outlet of the corresponding first delivery channel 320; the circumferential length of the outlet hole 3121 is not less than the radial width of the inlet of the corresponding first delivery channel 320. As a result, the first gas can more easily enter the corresponding first gas communication channel, which helps to further reduce the pressure drop at the connection, and the flow resistance of the first gas at the inlet hole and the outlet hole is further reduced, so as to achieve a smooth transition of the first gas between the first delivery channel 320 and the first gas communication channel 312.

[0063] Please continue to refer to Figure 3 and Figure 6 As shown, the inlet hole 3410 and the outlet hole 3411 of the second gas communication channel 341 extend along the circumference of the corresponding second delivery channel 340 respectively.

[0064] Preferably, the circumferential length of the inlet hole 3410 is not less than the radial width of the outlet of the corresponding second delivery channel 340; the circumferential length of the outlet hole 3411 is not less than the radial width of the inlet of the corresponding second delivery channel 340. As a result, the second gas can more easily enter the corresponding second gas communication channel, which helps to further reduce the pressure drop at the connection, further reduce the flow resistance of the second gas at the inlet hole and the outlet hole, and achieve a smooth transition of the second gas between the second delivery channel 340 and the second gas communication channel 341.

[0065] like Figures 7 to 9 As shown, in this embodiment, preferably, the inlet of the first delivery channel 320 located in the outer ring area is used as the first inlet end 310; the outlet of the first delivery channel 320 located in the central area is used as the first outlet end 311. The gas shower head 300 also includes a first inlet pipe 353 and a first outlet pipe 351, one end of the first inlet pipe 353 is connected to the first inlet end 310, and the other end is connected to the first gas source ( Figure 7 The first gas source can supply the first reaction gas and the purge gas. One end of the first outlet pipe 351 is connected to the first outlet port 311, and the other end is connected to the first low-pressure source ( Figure 7 (not shown) connection.

[0066] The inlet of the second conveying channel 340 located in the outer circle area serves as the second inlet end 343 ; the outlet of the second conveying channel 340 located in the central area serves as the second outlet end 344 .

[0067] The gas shower head 300 further includes a second inlet pipe 354 and a second outlet pipe 352. One end of the second inlet pipe 354 is connected to the second inlet port 343, and the other end is connected to the second gas source ( Figure 7 The second gas source can supply the second reaction gas and the purge gas. One end of the second outlet pipe 352 is connected to the second outlet port 344, and the other end is connected to the second low-pressure source ( Figure 7 (not shown in the figure). It can be seen that the circumference of the first delivery channel 320 and the second delivery channel 340 gradually decreases from the outermost circle area to the inner circle area. The circumference of the first delivery channel 320 in the outermost circle area is relatively long, so it takes a long time for the gas to diffuse from the first gas source to both sides until it converges at the outlet. As the circumference of the first delivery channel 320 decreases, the time it takes for the gas to diffuse from the inlet of the corresponding first delivery channel 320 to both sides to the outlet is also reduced. Therefore, the first gas source and the second gas source are respectively connected to the first delivery channel 320 and the second delivery channel 340 located in the outermost circle area, thereby making it easier to achieve uniform distribution of gas in the first delivery channel 320 and the second delivery channel 340, but the present invention is not limited thereto.

[0068] Alternatively, in other embodiments, the entrance of the first conveying channel 320 located in the outer circle area serves as the first outlet end; the outlet of the first conveying channel 320 located in the central area serves as the first inlet end; the entrance of the second conveying channel 340 located in the outer circle area serves as the second outlet end; and the outlet of the second conveying channel 340 located in the central area serves as the second inlet end.

[0069] Alternatively, in some other embodiments, the entrance of the first conveying channel 320 located in the outer circle area serves as the first inlet end; the exit of the first conveying channel 320 located in the central area serves as the first outlet end; the entrance of the second conveying channel 340 located in the outer circle area serves as the second outlet end; and the exit of the second conveying channel 340 located in the central area serves as the second inlet end.

[0070] Alternatively, in some other embodiments, the entrance of the first conveying channel 320 located in the outer circle area serves as the first outlet end; the outlet of the first conveying channel 320 located in the central area serves as the first inlet end; the entrance of the second conveying channel 340 located in the outer circle area serves as the second inlet end; and the outlet of the second conveying channel 340 located in the central area serves as the second outlet end.

[0071] In this embodiment, the first low-pressure source and the second low-pressure source are both vacuum pumps. A seal is provided around each of the annular grooves. The seal provided in this embodiment can prevent the gases in the first delivery channel 320 and the second delivery channel 340 from permeating and mixing with each other. Also, in this embodiment, since the first delivery channel 320 and the second delivery channel 340 are respectively complete circular rings, the seal used to seal the first delivery channel 320 and the second delivery channel 340 can also be a complete circular ring, thereby reducing the manufacturing process difficulty of the gas shower head.

[0072] Please continue to refer to Figure 8 As shown, the cross-sectional shape of the first gas communication channel 312 is in the shape of an arch bridge. Please continue to refer to Fig. 9 As shown, the cross-sectional shape of the second gas communication channel 341 is in the shape of an arch bridge. The first gas communication channel 312 and the second gas communication channel 341 with a cross-sectional shape in the shape of an arch bridge are more conducive to reducing the pressure drop compared to a channel structure with a right-angle turn (such as a "冂" shape), can further reduce the gas flow resistance, and can supply gas to the substrate more evenly.

[0073] In some other embodiments, as Fig.10 shown, the difference between this embodiment and the above embodiment is only that the connection manner between two adjacent gas delivery channels (the first delivery channel 320 and the second delivery channel 340) is different. In this embodiment, the gas distribution plate 301 further includes: a plurality of partition walls 36, each of the partition walls 36 is obliquely arranged in the corresponding annular groove (the annular groove here can refer to the position of the first delivery channel 320), and both ends of the partition wall 36 are respectively connected to the two inner walls of the annular groove, so as to realize the isolation of the delivery channels.

[0074] Please continue to refer to Fig.10 As shown, the structures of the first delivery channel 320 and the second delivery channel 340 are the same (the partition walls in the second delivery channel are not shown), each of the first delivery channels 320 includes an inlet and an outlet, and the inlet and the outlet are respectively located on both sides of the partition wall 36; the outlet of one of the adjacent first delivery channels 320 is communicated with the inlet of the other first delivery channel 320 through the first gas communication channel 312, so that the first gas diffuses spirally towards the first outlet end 311. In this embodiment, the inlet of the first delivery channel 320 located in the outermost circle serves as the first inlet end 310 and is communicated with the first gas source.

[0075] Please continue to refer to Fig.10As shown, the tangent line at the connection point between the partition wall 36 and the outer wall of the corresponding first conveying channel 320 and the partition wall 36 form an angle, and the angle ranges from 15° to 45°. Figures 1 to 9 Compared with the embodiment shown in the figure, the present embodiment provides a partition wall 36 so that the transmission angle of the first gas or the second gas at the partition wall 36 entering the corresponding gas connecting channel is smaller, so the pressure drop generated at the position where it meets the gas connecting channel is smaller, and the flow resistance of the gas at the inlet and outlet holes is further reduced, thereby achieving a smooth transition of the gas between the gas connecting channels, reducing the pressure drop, and improving the uniformity of gas distribution.

[0076] Please continue to refer to Fig.10 As shown, the partition walls 36 located in the first conveying channel 320 are arranged in a spiral pattern; and the partition walls 36 located in the second conveying channel 340 are arranged in a spiral pattern.

[0077] The first gas communication channels 312 are arranged in a spiral line on the cover plate; the second gas communication channels are arranged in a spiral line on the cover plate. This realizes the bridge connection of the delivery channel. This connection method can still ensure that the seal located at the groove wall of the annular groove is still a complete annular ring, thereby reducing the difficulty of the process.

[0078] On the other hand, this embodiment further provides a method for using the vapor deposition device as described above, comprising:

[0079] Step a: The first reaction gas is introduced into the first delivery channel 320, and the second low-pressure source is in a closed state; the first reaction gas diffuses toward the surface of the substrate 500 to be processed through the corresponding air holes 342. Optionally, the first low-pressure source is turned on at the same time; at this time, the opening of the first low-pressure source is relatively small, which is more conducive to the diffusion of the first reaction gas than not turning on the first low-pressure source.

[0080] Optionally, in this embodiment or some other embodiments, a purge gas may be introduced into the second delivery channel 340. At this time, by introducing a small amount of purge gas into the second delivery channel 340, the first reaction gas flowing out of the gas hole 342 below the first delivery channel 320 may be prevented from entering the second delivery channel 340 due to the pressure difference.

[0081] Step b, stop introducing the first reaction gas, introduce purge gas into the first delivery channel 320, and the first low-pressure source is in an open state. In this step, the opening of the gas valve of the first low-pressure source is gradually increased from small to large. When the opening is small, the first reaction gas in the air hole 342 can be pressed into the reaction chamber, and a large opening can achieve rapid ventilation. The second delivery channel 340 is not ventilated, and the second low-pressure source is in a closed state.

[0082] Step c: close the first low-pressure source, introduce the second reaction gas into the second delivery channel 340, and diffuse the second reaction gas to the surface of the substrate 500 to be processed through the corresponding pores 342. Optionally, open the second low-pressure source at the same time; at this time, the opening of the second low-pressure source is relatively small, which is more conducive to the diffusion of the second reaction gas than not opening the second low-pressure source.

[0083] Optionally, in this embodiment or some other embodiments, a purge gas may be introduced into the first delivery channel 320, and the first low-pressure source is in a closed state, so as to prevent the second reaction gas flowing out of the air hole 342 below the second delivery channel 340 from entering the first delivery channel 320 due to the pressure difference.

[0084] Step d, stop introducing the second reaction gas, introduce purge gas into the second delivery channel, and the second low-pressure source is in an open state. In this step, the opening of the gas valve of the second low-pressure source is changed from small to large. When the opening is small, the second reaction gas in the air hole 342 can be pressed into the reaction chamber, and a large opening (or opening the second low-pressure source) can achieve rapid ventilation. There is no ventilation in the first delivery channel 320, and the first low-pressure source is in a closed state.

[0085] Repeat steps a to d.

[0086] It can be seen that by introducing the purge gas into the first or second delivery channel and simultaneously evacuating the channel, the residual reaction gas in the first / second delivery channel can be quickly removed to prevent the two reaction gases from reacting and forming deposits in the gas shower head.

[0087] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0088] In the description of the present invention, it should be understood that the terms "center", "height", "thickness", "up", "down", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0089] In the description of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0090] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0091] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A gas shower head, characterized in that: include: A gas distribution plate, wherein a gas delivery channel is provided on the gas distribution plate, wherein the gas delivery channel comprises a plurality of first delivery channels and a plurality of second delivery channels, wherein the plurality of first delivery channels and the plurality of second delivery channels are alternately arranged and concentrically disposed with each other; A cover plate, which covers the gas distribution plate, wherein a gas communication channel is provided on the cover plate, wherein the gas communication channel comprises a plurality of first gas communication channels and a plurality of second gas communication channels; The first gas communication channel crosses the second delivery channel to communicate with two adjacent first delivery channels; The second gas communication channel crosses the first delivery channel to communicate with two adjacent second delivery channels; a first inlet end communicated with the first delivery channel, and used for delivering a first gas into the first delivery channel; a first low pressure source, connected to the first outlet end of the first delivery channel, for providing low pressure to the first outlet end; a second inlet end in communication with the second delivery channel, for delivering a second gas into the second delivery channel; a second low pressure source, connected to the second outlet end of the second delivery channel, for providing low pressure to the second outlet end; A plurality of air holes are provided below the first delivery channel and the second delivery channel, and the air holes are used to supply reaction gas to the surface of the substrate to be processed.

2. The gas shower head according to claim 1, characterized in that: A circular groove is arranged at the center of the top surface of the gas distribution plate, and a plurality of annular grooves are arranged around the circular groove. The cover plate is covered on the top surface of the gas distribution plate.

3. The gas shower head according to claim 2, characterized in that: The first gas communication channel and the second gas communication channel are respectively arranged and distributed along the radial direction of the cover plate.

4. The gas shower head according to claim 3, characterized in that: The first gas communication channel and the second gas communication channel are arranged in directions perpendicular to each other.

5. The gas shower head according to claim 3, characterized in that: Each of the gas delivery channels comprises an inlet and an outlet; the outlet of one of two adjacent first delivery channels is connected to the inlet of the other; the outlet of one of two adjacent second delivery channels is connected to the inlet of the other.

6. The gas shower head according to claim 2, characterized in that: Also includes: Each of the annular grooves is also provided with an inclined partition wall, which divides the corresponding annular groove into two non-connected parts.

7. The gas shower head according to claim 6, characterized in that: Each of the gas delivery channels includes an inlet and an outlet respectively located on both sides of the partition wall; the outlet of one of the two adjacent first delivery channels is connected to the inlet of the other through the first gas connecting channel, so that the first gas diffuses in a spiral shape toward the first outlet end; the outlet of one of the two adjacent second delivery channels is connected to the inlet of the other through the second gas connecting channel, so that the second gas diffuses in a spiral shape toward the second outlet end.

8. The gas shower head according to claim 7, characterized in that: A tangent line at a connection point between the partition wall and the outer side wall of the corresponding annular groove forms an angle with the partition wall, and the angle ranges from 15° to 45°.

9. The gas shower head according to claim 8, characterized in that: The partition walls located in the first conveying channel are arranged in a spiral pattern; The partition walls located in the second conveying channel are arranged in a spiral pattern.

10. The gas shower head according to claim 9, characterized in that: The plurality of first gas communication channels are arranged in a spiral pattern on the cover plate; The plurality of second gas communication channels are arranged in a spiral pattern on the cover plate.

11. The gas shower head according to claim 5 or 10, characterized in that: The gas communication channel includes an inlet hole and an outlet hole, the inlet hole is connected to the outlet of the corresponding gas delivery channel, and the outlet hole is connected to the inlet of the corresponding gas delivery channel.

12. The gas shower head according to claim 11, wherein: The inlet hole and the outlet hole extend along the circumference of the corresponding gas delivery channel respectively.

13. The gas shower head according to claim 12, wherein: The circumferential length of the inlet hole of the gas communication channel is not less than the radial width of the outlet of the corresponding gas delivery channel; the circumferential length of the outlet hole of the gas communication channel is not less than the radial width of the inlet of the corresponding gas delivery channel.

14. The gas shower head according to claim 13, wherein: The inlet of the first delivery channel located at the outermost side serves as one of the first inlet end and the first outlet end, The outlet of the first delivery channel located at the innermost side serves as the other of the first inlet end and the first outlet end; The inlet of the second delivery channel located at the outermost side serves as one of the second inlet end and the second outlet end, The outlet of the second delivery channel located at the innermost side serves as the other of the second inlet end and the second outlet end.

15. The gas shower head according to claim 1, wherein: The first low-pressure source and the second low-pressure source both include air valves for controlling the suction force of the low-pressure sources.

16. The gas shower head according to claim 2, wherein: An annular seal is provided around the periphery of each groove.

17. A vapor deposition device, characterized in that: include: Reaction chamber; A base, which is arranged at the inner bottom of the reaction chamber and is used to support the substrate; The gas shower head according to any one of claims 1 to 16, wherein the gas shower head is arranged at the top of the reaction chamber, opposite to the base, and is used to provide reaction gas to the surface of the substrate.

18. A method for using the vapor deposition apparatus according to claim 17, characterized in that: include: Step a, introducing the first reaction gas into the first delivery channel, and the second low-pressure source is in a closed state; Step b, stopping the introduction of the first reaction gas, introducing a purge gas into the first delivery channel, and keeping the first low-pressure source in an open state; Step c, closing the first low-pressure source and introducing a second reaction gas into the second delivery channel; Step d, stopping the introduction of the second reaction gas, introducing a purge gas into the second delivery channel, and keeping the second low-pressure source in an open state; Repeat steps a to d.

19. The method for using the vapor deposition device according to claim 18, characterized in that: Also includes: While executing step a, turning on the first low pressure source; While executing step c, the second low pressure source is turned on.

20. The method for using the vapor deposition device according to claim 18 or 19, characterized in that: Also includes: While executing step a, a purge gas is introduced into the second delivery channel; while executing step c, a purge gas is introduced into the first delivery channel.

21. The method for using the vapor deposition device according to claim 18, characterized in that: When executing step b, the opening of the gas valve of the first low-pressure source is gradually increased from a small opening; when executing step d, the opening of the gas valve of the second low-pressure source is gradually increased from a small opening.

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