Method and device for determining parameters of anti-reflection layer of wafer, equipment and storage medium

Abstract

The invention discloses a method and device for determining parameters of an anti-reflection layer of a wafer, equipment and a storage medium. The method comprises the steps that the incident light intensity of incident light emitted to a target wafer and a plurality of parameter values corresponding to at least one parameter in an anti-reflection layer are obtained, a patterned layer and a target layer are arranged on the target wafer in a stacked mode, and the target layer comprises any one of the anti-reflection layer and a photoresist layer; aiming at each parameter value, respectively calculating the reflected light intensity of incident light which is incident to the surface of the target wafer according to the incident light intensity and reflected by the target layer; for each parameter value, calculating the ratio of the reflected light intensity to the incident light intensity to obtain the reflectivity; fitting each parameter value and the corresponding reflectivity to obtain a corresponding relationship between the reflectivity and the parameters of the anti-reflection layer; and determining a target parameter value of each parameter according to the corresponding relationship. According to the embodiment of the invention, the parameters of the anti-reflection layer of the wafer can be determined.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor manufacturing technology, and in particular, relates to a method, device, equipment and storage medium for determining parameters of an anti-reflection layer of a wafer. Background Art

[0002] As the semiconductor industry continues to increase the integration and performance requirements of chips, the critical dimensions of the manufacturing process continue to shrink. As one of the key technologies in semiconductor manufacturing, optical lithography requires higher precision and more complex process control to cope with the gradually shrinking critical dimensions.

[0003] During the photolithography process, when light hits the photoresist layer, part of the light is absorbed by the photoresist layer, and the other part is reflected. The reflected light interferes with the incident light in the photoresist layer, causing a standing wave effect. The standing wave effect causes uneven light intensity distribution in the photoresist layer, resulting in unclear edges of the photolithography pattern, increased roughness, and even broken lines. In related technologies, the standing wave effect can be weakened by adding an anti-reflection layer to reduce the intensity of the reflected light.

[0004] However, in the related art, when adding an anti-reflection layer, only the morphology of the unprocessed crystal source (i.e., bare chip) is considered, resulting in the incident light and the reflected light not being able to destructively interfere well in the anti-reflection layer, and thus failing to reduce the standing wave effect, resulting in the problem of reduced quality of the lithography pattern. Summary of the invention

[0005] The embodiments of the present application provide a method, device, equipment and computer storage medium for determining the parameters of an anti-reflection layer of a wafer, which can determine the parameter values ​​of each parameter in the anti-reflection layer of the wafer by acquiring the correspondence between the reflectivity of the target layer and each parameter in the anti-reflection layer, thereby improving the performance of the anti-reflection layer.

[0006] In a first aspect, an embodiment of the present application provides a method for determining the parameters of an anti-reflection layer of a wafer, the method comprising: obtaining the incident light intensity of the incident light incident on a target wafer and a plurality of parameter values ​​corresponding to at least one parameter in the anti-reflection layer, wherein a patterned layer and a target layer are stacked on the target wafer, and the target layer comprises an anti-reflection layer and any one of a photoresist layer; for each parameter value, respectively calculating the reflected light intensity of the incident light incident on the surface of the target wafer according to the incident light intensity and reflected by the target layer; for each parameter value, calculating the ratio between the reflected light intensity and the incident light intensity to obtain the reflectivity; fitting each parameter value and the corresponding reflectivity to obtain the corresponding relationship between the reflectivity and the anti-reflection layer parameter; and determining the target parameter value of each parameter according to the corresponding relationship.

[0007] In one implementation, the target parameter value of each parameter is determined according to the corresponding relationship, including: determining a target reflectivity that meets a preset condition from the corresponding relationship; and determining the value of each parameter corresponding to the target reflectivity as the target parameter value of each parameter.

[0008] In one embodiment, at least one parameter includes a first parameter, and accordingly, the corresponding relationship includes a first corresponding relationship, which characterizes the corresponding relationship between the first parameter and the reflectivity; from the corresponding relationship, determining the target reflectivity that meets the preset conditions includes: when there is a first target reflectivity corresponding to the first parameter in the first corresponding relationship, determining the first target reflectivity as the target reflectivity that meets the preset conditions from the first corresponding relationship.

[0009] In one embodiment, at least one parameter includes multiple parameters, and the corresponding relationship includes a comprehensive corresponding relationship with the multiple parameters as independent variables and reflectivity as the dependent variable. According to the corresponding relationship, the target parameter value of each parameter is determined, including: taking the minimum reflectivity as a constraint condition, solving the comprehensive corresponding relationship, and obtaining the target parameter value corresponding to each parameter.

[0010] In one embodiment, before obtaining the incident light intensity of the incident light incident on the target wafer and multiple parameter values ​​corresponding to at least one parameter in the anti-reflection layer, the method also includes: obtaining a first reflectivity of the target layer of the target wafer and a second reflectivity of the target layer of the original wafer; the target wafer is a wafer obtained after patterning the original wafer, and the original wafer is a wafer with a target layer set on the wafer; obtaining the incident light intensity of the incident light incident on the wafer and multiple parameter values ​​corresponding to at least one parameter in the anti-reflection layer, including: when the difference between the first reflectivity and the second reflectivity is greater than a preset threshold, obtaining the incident light intensity of the incident light incident on the target wafer and multiple parameter values ​​corresponding to at least one parameter in the anti-reflection layer.

[0011] In one embodiment, the first reflectivity is the reflectivity of a location where a critical dimension is located in the target layer.

[0012] In one embodiment, obtaining a first reflectivity of a target layer of a target wafer includes: obtaining first size information of a periodic symmetric figure in a patterned layer in a first direction and second size information in a second direction, the first direction and the second direction being perpendicular; determining a sampling step according to the first size information and the second size information; collecting first graphic parameter information of the periodic symmetric figure at different positions according to the sampling step; performing strict coupled wave analysis on the first graphic parameter information at different positions respectively, to obtain a first reflectivity distribution at positions in the target layer corresponding to different positions of the periodic symmetric figure; determining the first reflectivity of the target layer of the target wafer according to the first reflectivity distribution.

[0013] In one embodiment, determining a first reflectivity of a target layer of a target wafer according to a first reflectivity distribution includes: determining a critical dimension position of a critical dimension of a periodically symmetric figure; and determining the reflectivity at a position in the target layer corresponding to the critical dimension position as the first reflectivity.

[0014] In one embodiment, obtaining the second reflectivity of the target layer of the original wafer includes: collecting second graphic parameter information of the original wafer at different positions according to sampling steps; performing strict coupled wave analysis on the second graphic parameter information at different positions respectively to obtain the second reflectivity of the target layer of the original wafer.

[0015] In a second aspect, an embodiment of the present application provides a device for determining the anti-reflection layer parameters of a wafer, the device comprising: an acquisition module, for acquiring the incident light intensity of the incident light incident on the target wafer and multiple parameter values ​​corresponding to at least one parameter in the anti-reflection layer, wherein a patterned layer and a target layer are stacked on the target wafer, and the target layer comprises any one of an anti-reflection layer and a photoresist layer; a first calculation module, for calculating, for each parameter value, the reflected light intensity of the incident light incident on the target wafer surface according to the incident light intensity and reflected by the target layer; a second calculation module, for calculating, for each parameter value, the ratio between the reflected light intensity and the incident light intensity to obtain the reflectivity; a fitting module, for fitting each parameter value and the corresponding reflectivity to obtain the corresponding relationship between the reflectivity and the anti-reflection layer parameter; a determination module, for determining the target parameter value of each parameter based on the corresponding relationship.

[0016] In a third aspect, an embodiment of the present application provides a device for determining the anti-reflection layer parameters of a wafer, the device comprising: a processor and a memory storing computer program instructions; when the processor executes the computer program instructions, it implements the method for determining the anti-reflection layer parameters of the wafer in the first aspect or any one of the embodiments of the first aspect.

[0017] In a fourth aspect, a computer-readable storage medium stores computer program instructions, and when the computer program instructions are executed by a processor, the method for determining the anti-reflection layer parameters of the wafer in the first aspect or any one embodiment of the first aspect is implemented.

[0018] In a fifth aspect, an embodiment of the present application provides a computer program product. When the instructions in the computer program product are executed by a processor of an electronic device, the electronic device executes a method for determining the anti-reflective layer parameters of a wafer as described in the first aspect or any one of the embodiments of the first aspect.

[0019] The method, device, equipment and computer storage medium for determining the anti-reflection layer parameters of the wafer in the embodiment of the present application can obtain the incident light intensity of the incident light irradiating the target wafer and the reflected light intensity at the target layer when the anti-reflection layer parameters are different values, thereby calculating the reflectivity of the target layer when the anti-reflection layer parameters are different values ​​through the obtained incident light intensity and reflected light intensity. Then, the corresponding relationship between the anti-reflection layer parameters and the reflectivity is fitted. And the target parameter value of the anti-reflection layer parameters is determined according to the corresponding relationship, so that the anti-reflection layer can reduce the reflected light intensity of the target layer, that is, reduce the standing wave effect, and improve the quality of the lithography pattern. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solution of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0021] Figure 1 A schematic flow chart of a method for determining anti-reflection layer parameters of a wafer provided by an embodiment of the present application is shown;

[0022] Figure 2 A schematic diagram of the architecture of a target wafer provided by an embodiment of the present application is shown;

[0023] Figure 3 A schematic diagram showing the corresponding relationship between reflectivity and anti-reflection layer parameters provided by an embodiment of the present application;

[0024] Figure 4 A schematic diagram of the process of S150 provided in one embodiment of the present application is shown;

[0025] Figure 5 A schematic flow chart of a method for determining parameters of a wafer anti-reflection layer provided in another embodiment of the present application is shown;

[0026] Figure 6 A schematic diagram of the architecture of a raw wafer provided by an embodiment of the present application is shown;

[0027] Figure 7 A schematic diagram of mask splitting in a LELE process provided by an embodiment of the present application is shown;

[0028] Figure 8 A schematic diagram of the process of S160 provided in one embodiment of the present application is shown;

[0029] Fig. 9 A schematic diagram of a first reflectivity distribution provided by an embodiment of the present application is shown;

[0030] Fig.10A schematic diagram of the process of S160 provided in another embodiment of the present application is shown;

[0031] Fig.11 is a schematic structural diagram of a device for determining parameters of an anti-reflection layer of a wafer provided in another embodiment of the present application;

[0032] Fig.12 It is a schematic structural diagram of a device for determining parameters of an anti-reflection layer of a wafer provided in yet another embodiment of the present application. DETAILED DESCRIPTION

[0033] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, rather than to limit the present application. For those skilled in the art, the present application can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by illustrating the examples of the present application.

[0034] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "include..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0035] Optical lithography technology is moving towards smaller nodes in the critical dimensions of semiconductor manufacturing. In related technologies, in order to achieve smaller processes, the required graphic line width (Lines and Spaces) patterns and contact holes can be generated through technologies such as double mask and double exposure. It is understandable that similar to the strict electromagnetic field (EMF) effect caused by mask topography, changes in the microstructure and uneven topography (wafer topography) on the surface or inside of the wafer will cause topography effects. For example, discontinuities or height differences on the surface or inside of the wafer may cause changes in the reflection characteristics of the incident light in these areas, which may cause the deposition of photoresist materials (resist footing), the reduction of the efficiency of the bottom anti-reflective coating (Bottom Anti-Reflective Coating, BARC), and reflective notching. Therefore, the existence of these topographic effects poses a challenge to the high precision, high yield and high density pursued in advanced semiconductor manufacturing processes. To reduce the impact of these effects, accurate models and simulation techniques are needed to optimize lithography process parameters and material selection.

[0036] In the related art, when modeling each stacked layer of the wafer, for example, when modeling the anti-reflection layer, only the anti-reflection effect of the anti-reflection coating on the bare die is considered, and the morphology of the wafer with the topographic effect will affect the effect of the anti-reflection layer. That is, when modeling the anti-reflection layer in the related art, the actual morphology of the wafer at this time and the topographic effect caused by the modified morphology are not taken into account. Therefore, it can be understood that only considering the morphology of the bare die, the constructed anti-reflection layer cannot perform destructive interference well, and thus cannot reduce the standing wave effect, resulting in reduced quality of the lithography pattern.

[0037] In order to solve the problems in the prior art, the embodiments of the present application provide a method, device, equipment and storage medium for determining parameters of an anti-reflection layer of a wafer. The method for determining parameters of an anti-reflection layer of a wafer provided in the embodiments of the present application is first introduced below.

[0038] Figure 1 FIG. 1 is a flow chart of a method for determining parameters of an anti-reflection layer of a wafer provided by an embodiment of the present application. Figure 1 As shown, the method for determining the anti-reflection layer parameters of the wafer in the embodiment of the present application includes the following steps:

[0039] S110, acquiring the incident light intensity of the incident light incident on the target wafer and a plurality of parameter values ​​corresponding to at least one parameter of the anti-reflection layer.

[0040] Wherein, a patterned layer and a target layer are stacked on the target wafer.

[0041] Exemplarily, the patterned layer can be a graphic structure layer with a specific shape or size formed on the surface of the target wafer. Among them, these specific shapes or sizes determine the layout and function of the integrated circuit. In one example, the patterned layer can be a graphic structure layer obtained by a series of process steps on the surface of the wafer, such as photolithography and etching.

[0042] Exemplarily, the target wafer includes a patterned layer and a target layer, and the patterned layer and the target layer are arranged on the target wafer in a stacked structure. Furthermore, the target layer includes any one of an anti-reflection layer and a photoresist layer.

[0043] In one example, Figure 2 FIG. 1 shows a schematic diagram of the architecture of a target wafer provided by an embodiment of the present application, such as Figure 2 As shown, the target wafer 200 may include a substrate 1, a first anti-reflection layer 2, a second anti-reflection layer 3, and a photoresist layer 4. A patterned layer 5 may exist on the substrate 1.

[0044] Exemplarily, the anti-reflection layer parameter may be one or more. One or more anti-reflection layer parameters have an impact on the performance of the anti-reflection layer. For example, the anti-reflection layer parameters may include the thickness, refractive index, and extinction coefficient of the anti-reflection layer. Further, the parameter value corresponding to the anti-reflection layer parameter may be a parameter value within the process allowable range. For example, the parameter value of the thickness of the anti-reflection layer may be a parameter value having an arithmetical relationship such as 20 nanometers (nm), 40nm, and 60nm.

[0045] S120 , for each parameter value, respectively calculating the reflected light intensity of the incident light incident on the target wafer surface and reflected by the target layer according to the incident light intensity.

[0046] Exemplarily, when the incident light intensity of the incident light remains unchanged and the parameters in the anti-reflection layer take different parameter values, the reflected light intensity of the target layer is different.

[0047] S130. For each parameter value, calculate the ratio of the reflected light intensity to the incident light intensity to obtain the reflectivity.

[0048] Exemplarily, the ratio between the reflected light intensity of the target layer and the incident light intensity may be used as the reflectivity of the target layer.

[0049] For example, for any parameter in the anti-reflection layer, the reflectivity of the target layer when the parameter takes the parameter value can be calculated when the parameter takes different parameter values, thereby obtaining multiple reflectivities. In addition, the obtained multiple reflectivities correspond to the different parameter values ​​of the parameter.

[0050] In one example, when the anti-reflection layer parameter is the thickness of the anti-reflection layer, when the thickness of the anti-reflection layer is 20 nm, the reflectivity of the target layer can be calculated to be 0.01; when the thickness of the anti-reflection layer is 60 nm, the reflectivity of the target layer can be calculated to be 0.4.

[0051] S140, fitting each parameter value and the corresponding reflectivity to obtain a corresponding relationship between the reflectivity and the anti-reflection layer parameters.

[0052] Exemplarily, the calculated reflectivity and the parameter value may be fitted to obtain the corresponding relationship between the parameter of the anti-reflection layer and the reflectivity of the target layer. In one example, when the anti-reflection layer parameter is the thickness of the anti-reflection layer, the following may be obtained: Figure 3 Schematic diagram of the corresponding relationship curve between the reflectivity and the anti-reflection layer parameters shown in FIG. The horizontal axis can represent the thickness of the anti-reflection layer, and the vertical axis can represent the reflectivity of the target layer. Figure 3 As shown, different anti-reflection layer thicknesses correspond to different target layer reflectivities. Figure 3 A schematic diagram showing the corresponding relationship between reflectivity and anti-reflection layer parameters provided in one embodiment of the present application.

[0053] S150. Determine a target parameter value of each anti-reflection layer parameter according to the corresponding relationship.

[0054] Exemplarily, the target parameter value corresponding to each anti-reflection layer parameter can be determined through the corresponding relationship. In one example, the target reflectivity can be determined and the parameter value corresponding to the target reflectivity in the corresponding relationship can be determined according to the corresponding relationship, and the parameter value can be used as the target parameter value. The target reflectivity is determined by different customer requirements, or can be determined by relevant technicians based on experience.

[0055] Exemplarily, the corresponding relationship may be a corresponding relationship between a parameter in the anti-reflection layer and the reflectivity, or may be a corresponding relationship between multiple parameters in the anti-reflection layer and the reflectivity.

[0056] In some optional embodiments, in order to make the acquired anti-reflection layer parameters meet user needs, as another implementation method of the present application, the present application also provides another implementation method of step S150, please refer to the following embodiments for details.

[0057] Figure 4 FIG. 1 is a flow chart of S150 provided by an embodiment of the present application. Figure 4 As shown, S150 in the embodiment of the present application includes the following steps:

[0058] S151. Determine a target reflectivity that meets a preset condition from the corresponding relationship.

[0059] Exemplarily, the preset condition may be determined by a user according to needs, or the preset condition may be set by relevant technical personnel based on experience.

[0060] In some optional embodiments, at least one parameter of the anti-reflection layer includes a first parameter, and accordingly, the corresponding relationship includes a first corresponding relationship, which characterizes the corresponding relationship between the first parameter and the reflectivity; from the corresponding relationship, determining the target reflectivity that meets the preset conditions, including: when there is a first target reflectivity corresponding to the first parameter in the first corresponding relationship, determining the first target reflectivity as the target reflectivity that meets the preset conditions from the first corresponding relationship.

[0061] Exemplarily, the anti-reflection layer may have multiple parameters, and further, each parameter may have a corresponding relationship with the reflectivity of the target layer.

[0062] Exemplarily, the first parameter may be any one of a plurality of parameters of the anti-reflection layer. Furthermore, the correspondence between the first parameter and the reflectivity of the target layer may be a first correspondence. In one example, the first parameter may be a thickness parameter of the anti-reflection layer.

[0063] Exemplarily, when there is a first target reflectivity satisfying the first corresponding relationship, the first target reflectivity can be used as the target reflectivity satisfying the preset condition. In one example, the target reflectivity can be a numerical range. For example, the technician sets the target reflectivity to be less than the first reflectivity. When there is reflectivity data less than the first reflectivity in the first corresponding relationship, the reflectivity value can be used as the target reflectivity, thereby determining the corresponding parameter value.

[0064] S152. Determine the value of each parameter corresponding to the target reflectivity as the target parameter value of each parameter.

[0065] Exemplarily, a target reflectivity satisfying a preset condition may be determined first, and further, a parameter value corresponding to the target reflectivity may be found in the corresponding relationship, and a high parameter value may be used as the target parameter value.

[0066] In an embodiment of the present application, by determining the value of the target reflectivity that satisfies the preset relationship in the corresponding curve, and then determining the parameter value of the anti-reflection layer parameter corresponding to the target reflectivity, it can be ensured that the parameters of the anti-reflection layer obtained can meet the requirements, thereby improving the quality of the lithography pattern.

[0067] Furthermore, in some optional embodiments, the parameters in the anti-reflection layer include multiple parameters, and the corresponding relationship includes a comprehensive corresponding relationship with the multiple parameters as independent variables and the reflectivity as the dependent variable. In addition, the comprehensive corresponding relationship can be solved with the minimum reflectivity as a constraint condition to obtain the target parameter value of each parameter.

[0068] Exemplarily, in order to ensure the quality of the photolithography pattern, the minimum value that the reflectivity can reach in the corresponding relationship can be used as the target reflectivity, and the parameter value corresponding to the target reflectivity can be used as the target parameter value of the anti-reflection layer.

[0069] Exemplarily, the corresponding relationship may be a functional relationship between the anti-reflection layer parameters and the reflectivity. In the functional relationship between the anti-reflection layer parameters and the reflectivity, the independent variable may be one or more parameters of the anti-reflection layer, and the dependent variable may be the reflectivity of the target layer. That is, it is understandable that the corresponding relationship between the one or more parameters of the anti-reflection layer and the reflectivity can be fitted by obtaining the parameter values ​​corresponding to the one or more parameters of the anti-reflection layer and calculating the corresponding reflectivity.

[0070] It is understandable that, considering the operability and convenience of the process engineering, a parameter in the anti-reflection layer can be adjusted separately, and the corresponding relationship between the parameter and the reflectivity can be fitted. Then the target parameter value corresponding to the anti-reflection layer parameter is determined by the corresponding relationship. At this time, the parameter values ​​of other parameters in the anti-reflection layer can be determined by the technical eye based on relevant experience. Furthermore, the minimum value that the reflectivity can reach in the corresponding relationship can be obtained and compared with the customer demand. If the reflectivity can meet the customer demand, the parameter value corresponding to the reflectivity can be used as the target parameter value. If the minimum reflectivity in the corresponding relationship between the parameter and the reflection cannot meet the customer demand, the curve between multiple parameters in the anti-reflection layer and the reflectivity can be fitted to obtain a reflectivity with a larger range of variation, and then determine the target parameter values ​​corresponding to multiple parameters of the anti-reflection layer that meet the reflectivity corresponding to the customer demand.

[0071] In the embodiment of the present application, the incident light intensity of the incident light irradiating the target wafer and the reflected light intensity at the target layer can be obtained when the anti-reflection layer parameters are different values, so as to calculate the reflectivity of the target layer when the anti-reflection layer parameters are different values ​​through the incident light intensity and the reflected light intensity. Then, the corresponding relationship between the anti-reflection layer parameters and the reflectivity is fitted. And the target parameter value of the anti-reflection layer parameters is determined according to the corresponding relationship, so that the anti-reflection layer can reduce the reflected light intensity, that is, reduce the standing wave effect, and improve the quality of the lithography pattern.

[0072] In order to simplify the process, it is necessary to determine when to adjust the parameters of the anti-reflection layer. Therefore, as another implementation method of the present application, the present application also provides another implementation method for determining the parameters of the wafer anti-reflection layer. Please refer to the following embodiments for details.

[0073] Figure 5 FIG. 2 is a flow chart of a method for determining parameters of a wafer anti-reflection layer provided by another embodiment of the present application. Figure 5 As shown, in the method for determining parameters of the wafer anti-reflection layer in the embodiment of the present application, before S110, the method further includes:

[0074] S160 , obtaining a first reflectivity of a target layer of the target wafer and a second reflectivity of a target layer of the original wafer.

[0075] Among them, the original wafer is a wafer with a target layer set on the wafer, and the target wafer is a wafer obtained after patterning the original wafer.

[0076] S170. When the difference between the first reflectivity and the second reflectivity is greater than a preset threshold, obtain multiple parameter values ​​corresponding to the incident light intensity of the incident light incident on the target wafer and at least one parameter of the anti-reflection layer.

[0077] In some embodiments, in S160, the target wafer may include a patterned layer and a target layer, and the original wafer may include only the target layer. It is understandable that the target wafer may be regarded as a wafer having a patterned layer obtained by undergoing relevant processes on the basis of the original wafer.

[0078] In one example, Figure 6 A schematic diagram of the architecture of a raw wafer provided by an embodiment of the present application is shown. Figure 6 As shown, the original wafer 600 may include a substrate 1, a first anti-reflection layer 2, a second anti-reflection layer 3, and a photoresist layer 4. The substrate 1 does not include a patterned layer. It can be understood that the difference in structure between the original wafer and the target wafer is only the lack of a patterned layer.

[0079] For ease of understanding, in the embodiments of the present application, the target wafer and the original wafer are described with reference to the following examples.

[0080] In one example, in a lithography-etching-lithography-etching (LELE) process, the mask 700 (mask) may be split into: Figure 7The two parts shown are the first mask 701 (first mask) and the second mask 702 (second mask). During the first exposure, the second mask 702 can be exposed, that is, the horizontal lines in the mask 700 are exposed. At this time, the horizontal line pattern on the mask 700 is exposed to the photoresist layer, forming a part of the initial pattern to be etched. During the second exposure, the first mask 701 can be exposed, that is, the vertical lines in the mask 700 are exposed. At this time, the vertical line pattern on the mask 700 is exposed to add or modify the pattern formed after the first exposure, and finally form a more complex or higher density pattern combination. Among them, after the first exposure and etching, a patterned layer will be formed in the wafer, that is, a pattern as shown in FIG. Figure 2 For the structural layer shown, during the second exposure and etching process, when deploying the anti-reflection layer, it is necessary to first consider the structure of the pattern layer formed by the first exposure.

[0081] In some optional embodiments, the first reflectivity is the reflectivity of a location where a critical dimension in the target layer is located.

[0082] Furthermore, in order to obtain the first reflectivity of the target layer of the target wafer, as another implementation of the present application, the present application also provides another implementation of step S160, and please refer to the following embodiments for details.

[0083] Figure 8 FIG. 1 is a flow chart of S160 provided by an embodiment of the present application. Figure 8 As shown, S160 in the embodiment of the present application includes the following steps:

[0084] S161, obtaining first size information of a periodically symmetrical pattern in a patterned layer in a first direction and second size information in a second direction, wherein the first direction is perpendicular to the second direction.

[0085] Exemplarily, a graphic having a periodic symmetrical structure in a patterned layer can be determined, and first size information and second size information of the graphic having the periodic symmetrical structure in a first direction and a second direction can be determined. The first direction and the second direction are perpendicular to each other. In one example, before the wafer is processed accordingly, a coordinate system can be established according to the wafer position, wherein the first direction can be along the horizontal axis of the coordinate axis, and the second direction can be along the vertical axis of the coordinate axis.

[0086] S162: Determine a sampling step according to the first size information and the second size information.

[0087] For example, the sampling step determines the accuracy. It can be understood that if the sampling step is smaller, the accuracy is better, but the corresponding simulation time is longer; if the sampling step is larger, the accuracy is worse and the simulation time is shorter. In one example, the sampling step can be set to 2.5nm to ensure accuracy.

[0088] S163, collecting first graphic parameter information of the periodically symmetrical graphic at different positions according to the sampling step.

[0089] Exemplarily, the first pattern parameter information of the periodically symmetrical pattern in the first wafer at different positions may be collected with reference to the preset sampling step, wherein the different positions may refer to different positions in the periodically symmetrical pattern.

[0090] Exemplarily, the first graphic parameter information may include graphic error information. For example, the first image parameter information may include graphic sidewall angle parameters (SWA), corner rounding parameters, and parameters in a spin coating process.

[0091] S164, performing strict coupled wave analysis on the first graphic parameter information at different positions respectively, to obtain the first reflectivity distribution at positions corresponding to the periodically symmetrical graphics at different positions in the target layer.

[0092] Exemplarily, strict coupled wave analysis can be performed on the first graphic parameter information at different positions, so as to obtain the first reflectivity distribution at positions corresponding to different positions of the periodic symmetric graphic in the target layer. It can be understood that since the periodic symmetric structure may have different structures within the same period, the reflectivity in the target layer is also inconsistent.

[0093] In one example, Fig. 9 FIG. 1 is a schematic diagram of a first reflectivity distribution provided by an embodiment of the present application. Fig. 9 FIG. 1 shows a schematic diagram of the first parameter rate distribution corresponding to the target layer being an anti-reflection layer. In addition, the horizontal axis may represent the first direction, and the vertical axis may represent the second direction. Fig. 9 As shown, different reflectivity values ​​can be represented by grayscale.

[0094] S165 . Determine a first reflectivity of a target layer of the target wafer according to the first reflectivity distribution.

[0095] Exemplarily, the first reflectivity of the target layer in the target wafer may be determined in the first reflectivity distribution, wherein the first reflectivity of the target layer may be the reflectivity at a position in the target layer corresponding to the critical dimension position of the pattern layer.

[0096] In some optional embodiments, the critical dimension position of the periodically symmetrical pattern can be determined, and then the reflectivity at the position corresponding to the critical dimension position in the target layer can be determined as the first reflectivity. In the embodiment of the present application, the reflectivity corresponding to the critical dimension position is expressed as the reflectivity of the target layer, thereby ensuring the quality of the lithography pattern.

[0097] In the embodiment of the present application, the first size information of the periodic symmetric pattern in the patterned layer in the first direction and the second size information in the second direction are obtained, and the sampling step is determined according to the first size information and the second size information. According to the sampling step, the first graphic parameter information of the periodic symmetric pattern at different positions is collected, and then the first graphic parameter information at different positions is subjected to strict coupled wave analysis to obtain the first reflectivity distribution at the positions corresponding to the periodic symmetric pattern at different positions in the target layer, and the first reflectivity of the target layer of the target wafer is determined according to the first reflectivity distribution, thereby realizing the calculation of the first reflectivity.

[0098] In order to obtain the second reflectivity of the target layer of the original wafer, as another implementation of the present application, the present application also provides another implementation of step S160, and please refer to the following embodiments for details.

[0099] Fig.10 FIG. 2 shows a flow chart of S160 provided by another embodiment of the present application. Fig.10 As shown, S160 in the embodiment of the present application includes the following steps:

[0100] S166, collecting second graphic parameter information at different positions of the original wafer according to the sampling step.

[0101] For example, the sampling step may be a sampling step determined by relevant technicians based on experience. The second graphic parameter information may be information such as the flatness of the original wafer, ie, the bare die.

[0102] S167, performing strict coupled wave analysis on the second graphic parameter information at different positions respectively to obtain the second reflectivity of the original wafer target layer.

[0103] Exemplarily, strict coupled wave analysis may be performed on the second graphic parameter information at different positions to obtain the second reflectivity of the target layer of the original wafer.

[0104] In an embodiment of the present application, the second graphic parameter information of the original wafer at different positions can be collected according to the sampling step, and the second graphic parameter information at different positions can be subjected to strict coupled wave analysis to obtain the second reflectivity of the target layer of the original wafer, thereby realizing the calculation of the second reflectivity.

[0105] Based on the method for determining the anti-reflection layer parameters of a wafer provided in the above embodiment, the present application also provides a specific implementation of a device for determining the anti-reflection layer parameters of a wafer. Please refer to the following embodiment.

[0106] See first Fig.11 The device 1100 for determining the anti-reflection layer parameters of a wafer provided in the embodiment of the present application includes the following units:

[0107] An acquisition module 1101 is used to acquire multiple parameter values ​​corresponding to at least one parameter of the incident light intensity incident on the target wafer and the anti-reflection layer, wherein the target wafer is stacked with a patterned layer and a target layer, and the target layer includes any one of the anti-reflection layer and the photoresist layer;

[0108] The first calculation module 1102 is used to calculate, for each parameter value, the reflected light intensity of the incident light incident on the wafer surface and reflected by the target layer according to the incident light intensity;

[0109] The second calculation module 1103 is used to calculate the ratio between the reflected light intensity and the incident light intensity for each parameter value to obtain the reflectivity;

[0110] A fitting module 1104 is used to fit each parameter value and the corresponding reflectivity to obtain a corresponding relationship between the reflectivity and the anti-reflection layer parameters;

[0111] The determination module 1105 is used to determine the target parameter value of each parameter according to the corresponding relationship.

[0112] In one implementation, the determination module 1105 determines the target parameter value of each parameter according to the corresponding relationship in the following manner: determining the target reflectivity that meets the preset conditions from the corresponding relationship; and determining the value of each parameter corresponding to the target reflectivity as the target parameter value of each parameter.

[0113] In one embodiment, at least one parameter includes a first parameter, and accordingly, the corresponding relationship includes a first corresponding relationship, and the first corresponding relationship characterizes the corresponding relationship between the first parameter and the reflectivity; the determination module 1105 adopts the following method: when there is a first target reflectivity corresponding to the first parameter in the first corresponding relationship, the first target reflectivity is determined from the first corresponding relationship as a target reflectivity that meets a preset condition.

[0114] In one embodiment, at least one parameter includes multiple parameters, and the corresponding relationship includes a comprehensive corresponding relationship with the multiple parameters as independent variables and reflectivity as the dependent variable. The determination module 1105 determines the target parameter value of each parameter according to the corresponding relationship in the following manner: using the minimum reflectivity as a constraint condition, solving the comprehensive corresponding relationship, and obtaining the target parameter value corresponding to each parameter.

[0115] In one embodiment, when acquiring the incident light intensity of the incident light incident on the target wafer and multiple parameter values ​​corresponding to at least one parameter of the anti-reflection layer, the device further includes:

[0116] The reflectivity acquisition module 1106 is used to acquire a first reflectivity of a target layer of a target wafer and a second reflectivity of a target layer of an original wafer; the target wafer is a wafer obtained after patterning the wafer, and the original wafer is a wafer on which a target layer is set; the acquisition module 110 acquires a plurality of parameter values ​​corresponding to the incident light intensity of the incident light incident on the wafer and at least one parameter in the anti-reflection layer in the following manner: when the difference between the first reflectivity and the second reflectivity is greater than a preset threshold, the incident light intensity of the incident light incident on the target wafer and at least one parameter in the anti-reflection layer are acquired.

[0117] In one embodiment, the first reflectivity is the reflectivity of a location where a critical dimension is located in the target layer.

[0118] In one embodiment, the reflectivity acquisition module 1106 acquires the first reflectivity of the target layer of the target wafer in the following manner: acquire first size information of the periodic symmetric figure in the patterned layer in a first direction, and second size information in a second direction, the first direction and the second direction being perpendicular; determine a sampling step according to the first size information and the second size information; collect first graphic parameter information of the periodic symmetric figure at different positions according to the sampling step; perform rigorous coupled wave analysis on the first graphic parameter information at different positions, respectively, to obtain a first reflectivity distribution at positions corresponding to different positions of the periodic symmetric figure in the target layer; determine the first reflectivity of the target layer of the target wafer according to the first reflectivity distribution.

[0119] In one embodiment, the reflectivity acquisition module 1106 determines the first reflectivity of the target layer of the target wafer according to the first reflectivity distribution in the following manner: determining the key dimension position where the key dimension of the periodically symmetric figure is located; and determining the reflectivity at the position in the target layer corresponding to the key dimension position as the first reflectivity.

[0120] In one embodiment, the reflectivity acquisition module 1106 acquires the second reflectivity of the target layer of the original wafer in the following manner: according to the sampling step, the second graphic parameter information of the original wafer at different positions is collected; and the second graphic parameter information at different positions is subjected to strict coupled wave analysis to obtain the second reflectivity of the target layer of the original wafer.

[0121] The device for determining the anti-reflection layer parameters of the wafer in the embodiment of the present application can obtain the incident light intensity of the incident light irradiating the target wafer and the reflected light intensity at the target layer when the anti-reflection layer parameters are different values, thereby calculating the reflectivity of the target layer when the anti-reflection layer parameters are different values ​​through the incident light intensity and the reflected light intensity. Then, the corresponding relationship between the anti-reflection layer parameters and the reflectivity is fitted. And the target parameter value of the anti-reflection layer parameters is determined according to the corresponding relationship, so that the anti-reflection layer can reduce the reflected light intensity, that is, reduce the standing wave effect, and improve the quality of the lithography pattern.

[0122] Fig.12 A schematic diagram of the hardware structure for determining the anti-reflection layer parameters of a wafer provided in an embodiment of the present application is shown.

[0123] The device for determining parameters of an anti-reflection layer on a wafer may include a processor 1201 and a memory 1202 storing computer program instructions.

[0124] Specifically, the processor 1201 may include a central processing unit (CPU), or an application specific integrated circuit (ASIC), or may be configured to implement one or more integrated circuits of the embodiments of the present application.

[0125] The memory 1202 may include a large capacity memory for data or instructions. By way of example and not limitation, the memory 1202 may include a hard disk drive (HDD), a floppy disk drive, a flash memory, an optical disk, a magneto-optical disk, a magnetic tape, or a universal serial bus (USB) drive or a combination of two or more of these. In appropriate cases, the memory 1202 may include a removable or non-removable (or fixed) medium. In appropriate cases, the memory 1202 may be inside or outside the integrated gateway disaster recovery device. In a specific embodiment, the memory 1202 is a non-volatile solid-state memory.

[0126] The memory may include read-only memory (ROM), random access memory (RAM), magnetic disk storage media devices, optical storage media devices, flash memory devices, electrical, optical or other physical / tangible memory storage devices. Thus, typically, the memory includes one or more tangible (non-transitory) computer-readable storage media (e.g., memory devices) encoded with software including computer-executable instructions, and when the software is executed (e.g., by one or more processors), it is operable to perform the operations described with reference to the method according to an aspect of the present disclosure.

[0127] The processor 1201 reads and executes computer program instructions stored in the memory 1202 to implement any one of the methods for determining the anti-reflection layer parameters of the wafer in the above embodiments.

[0128] In one example, the device for determining the anti-reflection layer parameters of the wafer may further include a communication interface 1203 and a bus 1210. Fig.12 As shown, the processor 1201, the memory 1202, and the communication interface 1203 are connected via a bus 1210 and communicate with each other.

[0129] The communication interface 1203 is mainly used to implement communication between various modules, devices, units and / or equipment in the embodiments of the present application.

[0130] Bus 1210 includes hardware, software or both, and the components of online data flow billing equipment are coupled to each other. For example, but not limitation, bus may include accelerated graphics port (AGP) or other graphics bus, enhanced industrial standard architecture (EISA) bus, front-end bus (FSB), hypertransport (HT) interconnection, industrial standard architecture (ISA) bus, infinite bandwidth interconnection, low pin count (LPC) bus, memory bus, micro channel architecture (MCA) bus, peripheral component interconnection (PCI) bus, PCI-Express (PCI-X) bus, serial advanced technology attachment (SATA) bus, video electronics standard association local (VLB) bus or other suitable bus or two or more of these combinations. In appropriate cases, bus 1210 may include one or more buses. Although the present application embodiment describes and shows a specific bus, the present application considers any suitable bus or interconnection.

[0131] The device for determining the anti-reflection layer parameters of the wafer can perform the method for determining the anti-reflection layer parameters of the wafer in the embodiment of the present application based on the incident light intensity and the reflected light intensity of the target layer in the target wafer, thereby realizing the combination Figure 1 and Fig.11 A method and apparatus for determining parameters of an anti-reflection layer of a wafer are described.

[0132] In addition, in combination with the method for determining the anti-reflection layer parameters of the wafer in the above embodiment, the embodiment of the present application can provide a computer storage medium for implementation. The computer storage medium stores computer program instructions; when the computer program instructions are executed by the processor, any method for determining the anti-reflection layer parameters of the wafer in the above embodiment is implemented.

[0133] The present embodiment further provides a computer program product, including a computer program, which, when executed, implements any method for determining the anti-reflection layer parameters of a wafer in the above embodiments.

[0134] It should be clear that the present application is not limited to the specific configuration and processing described above and shown in the figures. For the sake of simplicity, a detailed description of the known method is omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of the present application is not limited to the specific steps described and shown, and those skilled in the art can make various changes, modifications and additions, or change the order between the steps after understanding the spirit of the present application.

[0135] The functional blocks shown in the above-described block diagram can be implemented as hardware, software, firmware or a combination thereof. When implemented in hardware, it can be, for example, an electronic circuit, an application specific integrated circuit (ASIC), appropriate firmware, a plug-in, a function card, etc. When implemented in software, the elements of the present application are programs or code segments that are used to perform the required tasks. The program or code segment can be stored in a machine-readable medium, or transmitted on a transmission medium or a communication link by a data signal carried in a carrier wave. "Machine-readable medium" can include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROM, flash memory, erasable ROM (EROM), floppy disks, CD-ROMs, optical disks, hard disks, optical fiber media, radio frequency (RF) links, etc. The code segment can be downloaded via a computer network such as the Internet, an intranet, etc.

[0136] It should also be noted that the exemplary embodiments mentioned in this application describe some methods or systems based on a series of steps or devices. However, this application is not limited to the order of the above steps, that is, the steps can be performed in the order mentioned in the embodiment, or in a different order from the embodiment, or several steps can be performed simultaneously.

[0137] Aspects of the present disclosure are described above with reference to the flowchart and / or block diagram of the method, device (system) and computer program product according to the embodiment of the present disclosure. It should be understood that each box in the flowchart and / or block diagram and the combination of each box in the flowchart and / or block diagram can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device to produce a machine so that these instructions executed by the processor of the computer or other programmable data processing device enable the implementation of the function / action specified in one or more boxes of the flowchart and / or block diagram. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor, or a field programmable logic circuit. It can also be understood that each box in the block diagram and / or flowchart and the combination of boxes in the block diagram and / or flowchart can also be implemented by dedicated hardware that performs a specified function or action, or can be implemented by a combination of dedicated hardware and computer instructions.

[0138] The above is only a specific implementation of the present application. Those skilled in the art can clearly understand that for the convenience and simplicity of description, the specific working processes of the systems, modules and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. It should be understood that the protection scope of the present application is not limited to this. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in this application, and these modifications or replacements should be included in the protection scope of this application.

Claims

1. A method for determining parameters of an anti-reflection layer of a wafer, characterized in that: The method comprises: Acquire multiple parameter values ​​corresponding to at least one parameter of the incident light intensity and the anti-reflection layer of the incident light incident on the target wafer, wherein the target wafer is stacked with a patterned layer and a target layer, and the target layer includes any one of the anti-reflection layer and the photoresist layer; For each parameter value, respectively calculating the reflected light intensity of the incident light incident on the target wafer surface according to the incident light intensity and reflected by the target layer; For each parameter value, the ratio between the reflected light intensity and the incident light intensity is calculated to obtain the reflectivity; Fitting each parameter value and the corresponding reflectivity to obtain the corresponding relationship between the reflectivity and the anti-reflection layer parameters; According to the corresponding relationship, a target parameter value of each parameter is determined.

2. The method for determining the anti-reflection layer parameters according to claim 1, characterized in that: Determining the target parameter value of each parameter according to the corresponding relationship includes: Determining a target reflectivity that meets a preset condition from the corresponding relationship; The value of each parameter corresponding to the target reflectivity is determined as the target parameter value of each parameter.

3. The method according to claim 2, characterized in that The at least one parameter includes a first parameter, and accordingly, the corresponding relationship includes a first corresponding relationship, wherein the first corresponding relationship represents a corresponding relationship between the first parameter and the reflectivity; Determining the target reflectivity satisfying a preset condition from the corresponding relationship includes: In a case where there is a first target reflectivity corresponding to the first parameter in the first corresponding relationship, the first target reflectivity is determined as a target reflectivity that meets a preset condition from the first corresponding relationship.

4. The method for determining the anti-reflection layer parameters according to claim 1, characterized in that: The at least one parameter includes multiple parameters, the corresponding relationship includes a comprehensive corresponding relationship with the multiple parameters as independent variables and reflectivity as a dependent variable, and determining the target parameter value of each parameter according to the corresponding relationship includes: Taking the minimum reflectivity as a constraint condition, the comprehensive corresponding relationship is solved to obtain the target parameter value corresponding to each parameter.

5. The method according to claim 1, characterized in that Before acquiring the incident light intensity of the incident light incident on the target wafer and multiple parameter values ​​corresponding to at least one parameter of the anti-reflection layer, the method further includes: Acquire a first reflectivity of a target layer of the target wafer and a second reflectivity of a target layer of an original wafer; the target wafer is a wafer obtained by patterning the original wafer, and the original wafer is a wafer on which a target layer is set; The step of obtaining the incident light intensity of the incident light incident on the wafer and multiple parameter values ​​corresponding to at least one parameter of the anti-reflection layer includes: When the difference between the first reflectivity and the second reflectivity is greater than a preset threshold, the incident light intensity of the incident light incident on the target wafer and multiple parameter values ​​corresponding to at least one parameter in the anti-reflection layer are obtained.

6. The method according to claim 5, characterized in that The first reflectivity is the reflectivity of a location where a critical dimension in the target layer is located.

7. The method according to claim 5, characterized in that Obtaining a first reflectivity of a target layer of a target wafer, comprising: Acquire first size information of the periodically symmetrical pattern in the patterned layer in a first direction and second size information in a second direction, wherein the first direction is perpendicular to the second direction; Determining a sampling step according to the first size information and the second size information; According to the sampling step, collecting first graphic parameter information of the periodically symmetrical graphic at different positions; Performing strict coupled wave analysis on the first graphic parameter information at different positions respectively, to obtain the first reflectivity distribution at positions corresponding to the periodically symmetric graphics at different positions in the target layer; A first reflectivity of a target layer of the target wafer is determined according to the first reflectivity distribution.

8. The method according to claim 7, characterized in that Determining a first reflectivity of a target layer of the target wafer according to the first reflectivity distribution includes: Determine the critical dimension position of the critical dimension of the periodically symmetrical pattern; The reflectivity at a position in the target layer corresponding to the critical dimension position is determined as the first reflectivity.

9. The method according to claim 5, characterized in that Obtaining a second reflectivity of a target layer of the original wafer, including: Collecting second graphic parameter information at different positions of the original wafer according to the sampling step; Strict coupled wave analysis is performed on the second graphic parameter information at different positions to obtain the second reflectivity of the target layer of the original wafer.

10. A device for determining parameters of an anti-reflection layer of a wafer, characterized in that: The device comprises: An acquisition module, used for acquiring a plurality of parameter values ​​corresponding to at least one parameter of an incident light intensity and an anti-reflection layer of an incident light incident on a target wafer, wherein a patterned layer and a target layer are stacked on the target wafer, and the target layer includes any one of an anti-reflection layer and a photoresist layer; A first calculation module is used to calculate, for each parameter value, the reflected light intensity of the incident light incident on the target wafer surface according to the incident light intensity and reflected by the target layer; A second calculation module is used to calculate the ratio between the reflected light intensity and the incident light intensity for each parameter value to obtain a reflectivity; A fitting module is used to fit each parameter value and the corresponding reflectivity to obtain the corresponding relationship between the reflectivity and the anti-reflection layer parameters; The determination module is used to determine the target parameter value of each parameter according to the corresponding relationship.

11. A device for determining parameters of an anti-reflection layer of a wafer, characterized in that: The device comprises: a processor and a memory storing computer program instructions; When the processor executes the computer program instructions, the method for determining the anti-reflection layer parameters of the wafer as described in any one of claims 1-9 is implemented.

12. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer program instructions, and when the computer program instructions are executed by a processor, the method for determining the anti-reflection layer parameters of a wafer as described in any one of claims 1 to 9 is implemented.

13. A computer program product, characterized in that When the instructions in the computer program product are executed by a processor of an electronic device, the electronic device executes the method for determining the anti-reflection layer parameters of a wafer as described in any one of claims 1 to 9.

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