Photoresist and application method thereof

Abstract

The invention relates to a photoresist and an application method thereof, and belongs to the technical field of photolithography, the photoresist comprises a solvent, and a resin, a polymer monomer, a photosensitizer and a fluorescent agent which are dispersed in the solvent, the size of the fluorescent agent is less than 100 nanometers, and the fluorescent agent can be removed through ashing, so that after the photoresist is developed, the photosensitizer can be removed through ashing. According to the method, the residual photoresist defect can be nondestructively detected by utilizing the fluorescence emitted by the fluorescent agent in the residual photoresist, and the fluorescence detection is low in cost and high in efficiency, the fluorescent agent is easy to remove, and the fluorescent agent residue is avoided, so that the detection cost of the residual photoresist defect can be greatly reduced, and the detection efficiency of the residual photoresist defect is improved; and the application prospect of the photoresist is widened.

Description

Technical Field

[0001] The present application relates to the field of photolithography technology, and in particular to a photoresist and an application method thereof. Background Art

[0002] Photoresist, also known as photoresist (PR for short), promotes the decomposition of photosensitive materials to produce free radicals under the illumination of special wavelengths, and the photoresist undergoes cross-linking, curing or degradation reaction under the action of free radicals. In the photolithography process, light of a specific wavelength is irradiated through the mask plate onto the substrate coated with the photoresist. After the photoresist undergoes photocross-linking, curing or degradation reaction, the reaction site and the unreacted site produce chemical property differences. Because of the existence of the difference, an alkaline solvent or an organic solvent can be used to selectively remove the chemical reaction difference area. The photoresist remaining on the substrate is then post-cured by heating to form a patterned photoresist layer, which can be used as a mask layer for subsequent processing of the substrate layer. In the subsequent ion implantation or etching process, the area covered by the photoresist is protected and cannot be implanted with ions or etched, while the exposed area will be implanted with ions or etched. Finally, the patterned photoresist layer is stripped off using a stripping solution during development, and the original substrate obtains an ion implantation area or pattern corresponding to the mask plate. After the photoresist is developed, it is necessary to detect whether there are residual defects in the photoresist.

[0003] However, the methods for detecting residual photoresist defects in the prior art have the problems of low detection efficiency, poor detection effect and high detection cost. Summary of the invention

[0004] The purpose of the present application is to provide a photoresist and an application method thereof, so as to improve the detection efficiency and detection effect of residual defects in the photoresist and reduce the detection cost of residual defects in the photoresist.

[0005] An embodiment of the present application provides a photoresist, comprising: a solvent; a resin, a polymer monomer, a photosensitizer, and a fluorescent agent dispersed in the solvent, wherein the size of the fluorescent agent is less than 100 nanometers, and the fluorescent agent can be removed by ashing.

[0006] Wherein, the fluorescent agent includes carbon-based fluorescent nanomaterials and / or organic fluorescent dyes.

[0007] Wherein, the carbon-based fluorescent nanomaterial includes at least one of nanodiamonds, carbon nanotubes, graphene oxide nanoparticles and carbon-based quantum dots.

[0008] Wherein, the organic fluorescent dye includes fluorescein dye and / or rhodamine dye.

[0009] Wherein, the mass fraction of the fluorescent agent in the photoresist is 0.1-10%.

[0010] Wherein, the absorption wavelength range of the fluorescent agent is 150-650 nm, and the emission wavelength range of the fluorescent agent is 300-700 nm.

[0011] Wherein, the resin includes at least one of an alkali-soluble resin, a thermosetting resin and a photocurable resin.

[0012] Wherein, the resin includes at least one of phenolic resin, acrylic resin, polyvinyl cinnamate and silicone resin.

[0013] Wherein, the photoresist further includes an additive, and the additive includes at least one of a surfactant, a silane coupling agent and a defoaming agent.

[0014] Wherein, the photoresist further includes a colorant, which is used for coloring the photoresist and includes a pigment and / or a dye.

[0015] Wherein, the polymer monomers include free radical monomers and / or cationic monomers.

[0016] Wherein, the polymer monomer includes at least one of an acrylate monomer, a vinyl monomer, a vinyl ether monomer and an epoxy monomer.

[0017] Wherein, the photosensitizer includes a free radical photosensitizer and / or a cationic photosensitizer.

[0018] Wherein, the photosensitizer includes at least one of ketoxime lipid photoinitiator, α-amino ketone photoinitiator, acetophenone photoinitiator, aromatic ketone photoinitiator and macromolecular initiator.

[0019] Wherein, the solvent is an organic solvent or an aqueous solvent.

[0020] Wherein, the solvent includes at least one of fatty alcohol, ethylene glycol ether, ethyl acetate, butyl acetate, methyl ethyl ketone, methyl isobutyl ketone, monomethyl ether ethylene glycol ester, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone, xylene and methyl pyrrolidone.

[0021] An embodiment of the present application also provides an application method of the photoresist as described above, including: coating the above-mentioned photoresist on one side of the target layer to form a photoresist layer; patterning the photoresist layer to form a patterned photoresist layer; performing fluorescence detection on the patterned photoresist layer, and judging whether there is residual photoresist corresponding to a non-target pattern in the patterned photoresist layer based on the detection result.

[0022] An embodiment of the present application also provides another method for applying the photoresist as described above, comprising: coating the above-mentioned photoresist on a semiconductor substrate to form a photoresist layer as an etching stop layer or a chemical mechanical polishing stop layer; forming a target layer on the upper surface of the stop layer; etching or chemical mechanical polishing the target layer, and simultaneously detecting the fluorescence intensity of the currently exposed layer, and when the detected fluorescence intensity is greater than a preset intensity threshold, stopping the etching or chemical mechanical polishing of the target layer, and the preset intensity threshold is greater than or equal to 0.

[0023] An embodiment of the present application also provides another method for applying the photoresist as described above, comprising: coating the above-mentioned photoresist on one side of the target layer to form a photoresist layer; patterning the photoresist layer to form a patterned photoresist layer; using the patterned photoresist layer as a mask, performing ion implantation or etching on the target layer; removing the patterned photoresist layer, performing fluorescence detection on the surface of the target layer after removal of the photoresist, and determining the photoresist removal effect after ion implantation or etching based on the detection result.

[0024] The beneficial effects of the present application are as follows: the composition of the photoresist of the present application includes a fluorescent agent, so that the photoresist has a photoluminescent function, and the size of the fluorescent agent is less than 100 nanometers and can be removed by ashing. The photoresist of the present application is applied to semiconductor photolithography. After the photoresist is developed, the fluorescence emitted by the fluorescent agent in the residual photoresist can be used to achieve non-destructive detection of photoresist residual defects, and the cost of fluorescence detection is low and the efficiency is high. The fluorescent agent is easy to remove and will not cause the fluorescent agent to remain, thereby greatly reducing the detection cost of photoresist residual defects and improving the detection efficiency of photoresist residual defects. In addition, the photoresist of the present application can also be used for the material of the etching stop layer or the chemical mechanical polishing stop layer, and when the etching stop layer or the chemical mechanical polishing layer is exposed during the processing, the etching or chemical mechanical polishing process stop state can be detected when the fluorescence intensity is detected. The photoresist of the present application has a wide range of application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0026] Figure 1 It is a schematic diagram of the top view of the structure of the photoresist after development in the prior art or in the embodiment of the present application;

[0027] Figure 2 It is a schematic diagram comparing the effects of photoresist before and after being bombarded by a high-energy electron beam emitted by an electron scanning microscope in the prior art;

[0028] Figure 3It is a schematic diagram of a top view of the structure after ion implantation is performed on a target layer using a patterned photoresist layer as a mask in the prior art or in an embodiment of the present application;

[0029] Figure 4 It is a schematic diagram of a top view structure after the patterned photoresist layer on the target layer is removed in the prior art or in the embodiments of the present application;

[0030] Figure 5 It is a schematic diagram of a process of applying a photoresist provided in an embodiment of the present application;

[0031] Figure 6 is a schematic diagram of the cross-sectional structure after step S11 provided in the embodiment of the present application is completed;

[0032] Figure 7 is a schematic diagram of the cross-sectional structure after step S12 is completed provided in an embodiment of the present application;

[0033] Figure 8 is another schematic flow chart of the photoresist application method provided in an embodiment of the present application;

[0034] Fig. 9 is another schematic flow chart of the photoresist application method provided in an embodiment of the present application;

[0035] Fig.10 It is a schematic diagram of the cross-sectional structure after the step S32 provided in the embodiment of the present application is completed. DETAILED DESCRIPTION

[0036] The present application is further described in detail below in conjunction with the accompanying drawings and examples. It is particularly noted that the following examples are only used to illustrate the present application, but are not intended to limit the scope of the present application. Similarly, the following examples are only some embodiments of the present application rather than all embodiments, and all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of this application.

[0037] In addition, when describing the structure of a component, when a layer or a region is referred to as being "on" or "above" another layer or another region, it may mean being directly above the other layer or another region, or having other layers or regions between it and the other layer or another region. Moreover, if the component is turned over, the layer or a region will be "under" or "below" the other layer or another region. In addition, the features, structures, or characteristics described below may be combined in any suitable manner in one or more embodiments.

[0038] At present, commonly used photoresists are viscous, transparent or translucent liquid mixtures with flow properties. This type of photoresist includes the following components: alkali-soluble resin, polymer monomer, photosensitive agent, solvent and pigment. When the photoresist is placed under ultraviolet light of a specific wavelength, the photosensitive agent absorbs energy, the original chemical bonds break and generate free radicals, thereby inducing a cross-linking and curing reaction of the polymer monomer to form a mixture with different chemical solubility.

[0039] However, the inventors of the present application found in the process of research and development that the problems existing in the prior art include: in the photolithography process, the exposed photoresist is differentially dissolved according to the difference in chemical solubility and then developed. For the residual photoresist defects, a scanning electron microscope is usually used for detection, and batch detection cannot be performed; and the scanning electron microscope emits a high-energy electron beam during the detection process, which will also bombard the target patterned photoresist, causing the energy loss of the photoresist to affect the mask effect of the patterned photoresist, that is, non-destructive detection cannot be performed. In addition, if the substrate is subsequently treated with ion implantation, the patterned photoresist will inevitably be implanted with ions. The hard denaturation of the photoresist after ion implantation will produce residual photoresist defects that are difficult to remove by burning or dissolving. These defects usually exist at the edge of the patterned photoresist. The electron beam emitted by the scanning electron microscope is located at the edge, which is easy to cause electron escape, resulting in the high brightness of these defective parts under the electron scanning microscope. The residue is difficult to find, and these defects will have a serious impact on the subsequent semiconductor process, and will eventually cause electrical performance defects of semiconductor devices.

[0040] To solve the above problems, an embodiment of the present application provides a new photoresist, which includes a solvent and a resin, a polymer monomer, a photosensitive agent and a fluorescent agent dispersed in the solvent, wherein the size of the fluorescent agent is less than 100 nanometers and the fluorescent agent can be removed by ashing.

[0041] Specifically, the fluorescent agent in the photoresist can emit fluorescence when excited by specific light, so that the photoresist has a photoluminescence function, thereby facilitating the use of the fluorescence function of the photoresist to achieve non-destructive, low-cost, and high-efficiency detection of photoresist residual defects.

[0042] In some embodiments, the fluorescent agent in the photoresist may specifically be a photoluminescent material.

[0043] Specifically, the fluorescent agent in the above-mentioned photoresist can selectively absorb light according to the wavelength of the light, and emit fluorescence with a longer wavelength than the absorbed light. In some examples, in the above-mentioned photoresist, the absorption wavelength range of the fluorescent agent can be 150 to 650 nm, and the emission wavelength range of the fluorescent agent is 300 to 700 nm. That is, the fluorescent agent in the above-mentioned photoresist can emit fluorescence with a wavelength of 300 to 700 nm under the excitation of light with a wavelength of 150 to 650 nm. In addition, during the specific implementation, an optical microscope can be used to observe the fluorescence signal of the above-mentioned photoresist (for example, fluorescence intensity and / or fluorescence distribution characteristics, etc.), and the residual defects of the photoresist can be detected based on the observed fluorescence signal.

[0044] In this embodiment, the fluorescent agent can exist stably in the above-mentioned photoresist and will not undergo physical or chemical reactions with other components in the above-mentioned photoresist, thereby ensuring that the fluorescent agent has stable fluorescent properties in the above-mentioned photoresist.

[0045] In this embodiment, the size of the fluorescent agent in the above-mentioned photoresist is less than 100 nanometers, which ensures that the size of the fluorescent agent is small enough to have good dispersion in the above-mentioned photoresist, thereby avoiding fluorescence quenching due to aggregation of the fluorescent agent in the above-mentioned photoresist and improving the luminescence efficiency of the above-mentioned photoresist.

[0046] Specifically, the fluorescent agent in the photoresist may be a fluorescent nanomaterial. A fluorescent nanomaterial is an ultra-micro material with fluorescent properties and at least one dimension of which is in the order of 1 to 100 nanometers. The fluorescent nanomaterial is small enough to diffuse in the photoresist, thereby achieving uniform distribution in the photoresist.

[0047] Specifically, the mass fraction of the fluorescent agent in the photoresist can be 0.1-10%, for example, 0.1%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9% or 10%, etc. Moreover, it can be understood that the greater the mass fraction of the fluorescent agent in the photoresist, the greater the fluorescence intensity of the photoresist can be, which is conducive to improving the detection accuracy of residual defects in the photoresist. Therefore, in specific implementation, the mass fraction of the fluorescent agent in the photoresist can be appropriately increased while ensuring the uniformity of the dispersion of the fluorescent agent in the photoresist, so as to increase the fluorescence intensity of the photoresist, and then when the fluorescent signal of the photoresist is used to detect residual defects in the photoresist, the accuracy of the detection result can be improved.

[0048] In this embodiment, the fluorescent agent in the photoresist can be removed by ashing, which ensures that the fluorescent agent in the photoresist can be completely removed during the ashing process to avoid the fluorescent agent remaining as residue. The method of ashing the photoresist can be specifically: ashing the photoresist by oxygen combustion. In addition, during the specific implementation, the photoresist to be removed can be placed in an oxygen environment to achieve ashing removal of the photoresist by oxygen combustion.

[0049] Specifically, the fluorescent agent in the above-mentioned photoresist can be organic, inorganic or a mixture of the two. In certain embodiments, the fluorescent agent in the above-mentioned photoresist can include carbon-based fluorescent nanomaterials and / or organic fluorescent dyes. Wherein, the carbon-based fluorescent nanomaterials can include at least one of nanodiamonds, carbon nanotubes, graphene oxide nanoparticles and carbon-based quantum dots. Organic fluorescent dyes can include fluorescein dyes and / or rhodamine dyes. It should be noted that, since the main elements of carbon-based fluorescent nanomaterials and organic fluorescent dyes are composed of C, H, O and / or N, it is ensured that they can be removed by ashing, thereby being able to avoid causing new residual defects due to the introduction of fluorescent agents in the photoresist.

[0050] Among them, nanodiamond is a carbon material with a nanodiamond structure with a size of less than 100 nanometers. By doping nanodiamond with elements such as nitrogen and boron, nanodiamond particles with excellent fluorescence properties can be obtained. Carbon nanotubes (Carbon Nanotube, referred to as CNT) have fluorescence properties in the near-infrared band. For example, carbon nanotubes can emit fluorescence with a wavelength of 1000 to 1700nm. Graphene oxide (Graphene Oxide, referred to as GO) nanomaterials are typical two-dimensional nanostructured materials with only one layer of carbon atoms. Graphene oxide materials have oxygen-containing groups on their surface, which makes graphene oxide produce a band gap, so it can produce fluorescence. Graphene oxide (for example, graphene oxide modified with polyethylene glycol) has fluorescence properties in the near-infrared band.

[0051] Carbon-based quantum dots (CQDs), also known as carbon dots or carbon nanodots, are a new type of fluorescent nanomaterials. The average particle size of carbon-based quantum dots is about 3 nanometers. Carbon-based quantum dots have the advantages of wide and continuous excitation spectrum, high fluorescence stability, adjustable fluorescence wavelength, and low biological toxicity.

[0052] In some specific embodiments, the fluorescent agent in the photoresist may specifically include nanoparticles based on organic fluorescent dyes, for example, nanoparticles based on organic fluorescent dyes. Specifically, the average particle size of the nanoparticles based on organic fluorescent dyes may be about 25 nanometers.

[0053] Wherein, the preparation method of nanoparticle based on organic fluorescent dye mainly contains two kinds, wherein a kind of is to utilize organic polymer or inorganic nanoparticle that organic dye molecule is wrapped in nanoparticle inside, another kind of is to make organic dye molecule be adsorbed on the surface of nanoparticle by chemical or physical method.Like this, by combining organic dye molecule with nanoparticle, the stability of organic dye molecule in above-mentioned photoresist can be improved, and be conducive to realize the uniform distribution of organic dye molecule in above-mentioned photoresist.In addition, by modifying the surface of nanoparticle, the fusion effect of solvent in nanoparticle and above-mentioned photoresist can be improved, further increase the dispersion uniformity of organic dye molecule in above-mentioned photoresist.

[0054] In the present embodiment, the resin in the above-mentioned photoresist is used to maintain the chemical and mechanical properties of the photoresist, and may include at least one of an alkali-soluble resin, a thermosetting resin and a photocurable resin. Among them, the alkali-soluble resin can be dissolved in an alkaline solution, and may include at least one of an acrylic resin, an acrylate resin and polyvinyl cinnamate. Thermosetting resins can be cured after being heated, and may include epoxy resins and / or phenolic resins, and photocurable resins can be cured after being exposed to light, and may include siloxane resins. Exemplarily, the resin in the above-mentioned photoresist may specifically include at least one of a phenolic resin, an acrylic resin, polyvinyl cinnamate and a siloxane resin.

[0055] In some specific embodiments, the photoresist may include an alkali-soluble resin and a thermosetting resin. In the photoresist, the mass fraction of the alkali-soluble resin may be 10-70%, and the mass fraction of the thermosetting resin may be 2-30%.

[0056] In this embodiment, the mass fraction of the polymer monomer in the above-mentioned photoresist can be 5-30%. The polymer monomer in the above-mentioned photoresist is used to increase the degree of crosslinking, improve the flexibility of the film layer, reduce the viscosity of the resin, etc. The polymer monomer in the above-mentioned photoresist can be a small molecule containing a polymerizable functional group, and can include a free radical monomer and / or a cationic monomer. Exemplarily, the polymer monomer in the above-mentioned photoresist can specifically include at least one of an acrylate monomer, a vinyl monomer, a vinyl ether monomer, and an epoxy monomer.

[0057] In this embodiment, the mass fraction of the photosensitive agent in the above-mentioned photoresist can be 0.5-8%. The photosensitive agent in the above-mentioned photoresist is used to make the corresponding polymer monomer undergo free radical polymerization or cationic polymerization reaction under the irradiation of light of a specific wavelength (for example, ultraviolet light). The photosensitive agent in the above-mentioned photoresist can include a free radical type photosensitive agent and / or a cationic type photosensitive agent. Exemplarily, the photosensitive agent in the above-mentioned photoresist can specifically include at least one of a ketoxime lipid photoinitiator, an a-amino ketone photoinitiator, an acetophenone-based photoinitiator, an aromatic ketone photoinitiator and a macromolecular initiator.

[0058] In this embodiment, the mass fraction of the solvent in the photoresist can be 20-90%. The solvent in the photoresist as a medium for the polymerization reaction of the polymer monomer can not only make the reaction milder and easier to control, but also make the photoresist reach an ideal viscosity, so as to prepare the photoresist coating by spraying, spin coating, roller coating or screen printing.

[0059] Specifically, the solvent in the above-mentioned photoresist can be an organic solvent or an aqueous solvent. Exemplarily, the solvent in the above-mentioned photoresist can specifically include at least one of aliphatic alcohol, glycol ether, ethyl acetate, butyl acetate, methyl ethyl ketone, methyl isobutyl ketone, monomethyl ether glycol ester, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone, xylene, methyl pyrrolidone, 3-ethoxyethyl propionate isopropyl alcohol and n-butanol.

[0060] In some embodiments, the photoresist may further include an additive, and the mass fraction of the additive in the photoresist may be 0-5%. The additive in the photoresist may include at least one of a surfactant, a silane coupling agent, and a defoaming agent.

[0061] Wherein, the surfactant is used to increase the wettability of the photoresist and the coating target layer, and the surfactant may include at least one of anionic surfactants, cationic surfactants and nonionic surfactants. Silane coupling agents are used to improve the adhesion of the photoresist on the surface of the target layer, and the silane coupling agents may include at least one of γ-aminopropyltriethoxysilane, γ-(2,3-epoxypropoxy)propyltrimethoxysilane and γ-(methacryloyloxy)propyltrimethoxysilane. Defoamers are used to reduce and / or hinder foam formation, and the defoamers may be polyacrylic defoamers or silicone defoamers. Moreover, during specific implementation, the additives in the above-mentioned photoresist may also include other functional reagents, which may be selected according to actual needs.

[0062] In some embodiments, the photoresist may further include a colorant, and the mass fraction of the colorant in the photoresist may be 0.1-5%. The colorant is used to color the photoresist, thereby making the photoresist more recognizable and facilitating its application in the field of metal etching. The colorant in the photoresist may include a pigment and / or a dye.

[0063] The pigment may be one or more of red pigment PR254, red pigment PR177, green pigment PG58, green pigment PG59, blue pigment PB15:6, purple pigment PV23, yellow pigment PY138, black pigment, etc. The dye may be red dye, blue dye, yellow dye, etc.

[0064] In some specific embodiments, the main components of the above-mentioned photoresist may include alkali-soluble resin, thermosetting resin, polymer monomer, photosensitizer, solvent, fluorescent agent and pigment, wherein the mass fraction of alkali-soluble resin may be 10-70%, the mass fraction of thermosetting resin may be 2-30%, the mass fraction of polymer monomer may be 5-30%, the mass fraction of photosensitizer may be 0.5-8%, the mass fraction of solvent may be 20-90%, the mass fraction of fluorescent agent may be 0.1-10%, and the mass fraction of pigment may be 0.1-5%. Moreover, in specific implementation, the above-mentioned photoresist may be obtained by stirring and mixing the components of the above-mentioned proportions evenly. Moreover, the photoresist film formed by the photoresist composed of the components of the above-mentioned proportions after photocuring and heat curing can resist the attack of acidic solution and alkaline solution, can meet the requirements of acid etching process and alkaline etching process at the same time, and can meet the needs of different metal substrates.

[0065] Specifically, by irradiation of ultraviolet light (or other beam energy) of a specific wavelength, the photosensitizer in the above-mentioned photoresist can generate free radicals to initiate a photocrosslinking curing reaction of the polymer monomer to form a high polymer. Then, under heating conditions, the thermosetting resin in the above-mentioned photoresist can not only undergo a thermal crosslinking curing reaction itself, but also undergo a thermal crosslinking curing reaction with the carboxylic acid groups in the alkali-soluble resin, further increasing the crosslinking density of the above-mentioned photoresist. In this way, the above-mentioned photoresist can first be exposed, soft-baked, and developed in an alkaline solution to form a pattern (or the high polymer formed by the crosslinking reaction under the action of an organic solvent is dissolved to form a pattern), and then post-baked and heat-cured, so that the photoresist containing the fluorescent agent forms a more compact and stable crosslinked structure (i.e., a patterned photoresist layer). In addition, because the photoresist contains the fluorescent agent, the pattern (i.e., the photolithographic pattern) formed by the photoresist containing the fluorescent agent in the photolithography process has a photoluminescent function.

[0066] Furthermore, the inventors of the present application discovered during the research and development process that the main components of existing photoresists include resins, thermosetting resins, polymer monomers, photosensitizers, solvents, and pigments. Under ultraviolet light conditions, the photosensitizers in existing photoresists can undergo photochemical reactions to produce photoacid free radicals, which can trigger photocrosslinking and curing reactions of polymer monomers to form polymers. Then, under heating conditions, the thermosetting resins in existing photoresists can not only undergo thermal crosslinking and curing reactions themselves, but can also undergo thermal crosslinking and curing reactions with the photoacid free radicals produced by the photosensitizer. In this way, the existing photoresist can first be exposed, developed in an alkaline solution (or organic solution) to form a pattern (i.e., a photolithographic pattern), and then post-baked, so that the existing photoresist forms a more dense and stable crosslinked structure (i.e., a patterned photoresist layer). However, as Figure 1As shown in FIG. 1 , in the pattern formed by the conventional photoresist after exposure and development, if, in addition to the target pattern A (i.e., the pattern corresponding to the mask used during exposure), there are other patterns B (i.e., non-target patterns), that is, photoresist residues B, then such residues B will cause the etching ratio of the subsequent etching process to fail to meet expectations, and such residues B cannot be tested in batches, especially in the case of Figure 1 In the scenario shown in which a hole structure is formed after the photoresist is developed, the detection of this defect B is more difficult.

[0067] In addition, in the prior art, both the size of the photolithography pattern and the defects of the photolithography pattern are generally detected by bombarding the photoresist with a high-energy electron beam emitted by an electron scanning microscope (SEM). However, the bombarded photoresist will have a certain amount of loss, which will have an adverse effect on the main pattern (i.e., the target pattern). For example, Figure 2 As shown, after the target pattern A is bombarded by the high-energy electron beam emitted by the electron scanning microscope, its edge area will suffer serious damage, resulting in an inward shrinkage phenomenon, so that the target pattern A becomes a pattern A'.

[0068] Furthermore, it should be noted that, in the present embodiment, by introducing a fluorescent agent into the photoresist, the pattern formed by the photoresist containing the fluorescent agent after exposure and development in the photolithography process has a fluorescent function, so that after the photoresist is exposed and developed, a specific wavelength of light (i.e., light with a wavelength within the absorption band of the fluorescent agent in the photoresist) can be used to irradiate the photoresist pattern (i.e., the pattern formed by the photoresist after exposure and development), so that the photoresist pattern itself can generate fluorescence of a specific wavelength, and then by detecting the fluorescence signal generated by the photoresist pattern itself, it is possible to detect the photoresist pattern defect B (i.e., other patterns in the pattern formed by the photoresist after exposure and development except the target pattern) without affecting the main pattern A of the photoresist pattern (i.e., the target pattern formed by the photoresist after exposure and development), that is, non-destructive detection of the photoresist pattern defect B can be achieved.

[0069] Among them, the target pattern in the pattern formed after the photoresist is exposed and developed can be considered as the desired pattern in the photolithography process, that is, it can be considered as the part of the photoresist that needs to be retained and not removed during the development of the photoresist; and other patterns except the target pattern in the pattern formed after the photoresist is exposed and developed can be considered as the undesirable pattern in the photolithography process, that is, it can be considered as the part of the photoresist that needs to be removed and not retained during the development of the photoresist. In other words, other patterns except the target pattern in the pattern formed after the photoresist is exposed and developed can be considered as residual photoresist, that is, photolithography pattern defects.

[0070] Furthermore, the inventors of the present application also found during the research and development process that Figure 3 As shown, in the process of performing ion implantation on the target layer D (e.g., semiconductor substrate) using the patterned photoresist layer C as a mask, the implanted ions will cause the local photoresist of the patterned photoresist layer C (e.g., the photoresist at the edge of the photolithography pattern) to be denatured, and the denatured photoresist C1 is difficult to be removed by dissolving or burning. That is, in the process of removing the patterned photoresist layer C by dissolving or burning, the denatured photoresist C1 will remain on the target layer D and cannot be removed (e.g., Figure 4 As shown in the figure, the photoresist residue defect is caused, and in the subsequent process, this defect will lead to the electrical performance defect of the semiconductor device (such as chip) in the later stage, so it is particularly important to detect this defect.

[0071] Furthermore, it should be noted that if Figure 3 and Figure 4 As shown, in this embodiment, by introducing a fluorescent agent into the photoresist, not only the photolithography pattern formed by the photoresist containing the fluorescent agent after exposure and development in the photolithography process has a fluorescent function, but also the photoresist C1 after the local denaturation of the photolithography pattern has a fluorescent function. Therefore, after removing the patterned photoresist layer C after ion implantation, the surface of the target layer D originally covered by the patterned photoresist layer C and currently exposed can be irradiated with light of a specific wavelength (i.e., light with a wavelength within the absorption band of the fluorescent agent in the photoresist) and simultaneously the fluorescent signal of the surface of the target layer D is detected. If the fluorescent signal is detected, it can be indicated that there is residual denatured photoresist C1 on the surface of the target layer D. If no fluorescent signal is detected, it can be indicated that there is no residual denatured photoresist C1 on the surface of the target layer D. That is, non-destructive detection of the residual denatured photoresist C1 can be achieved.

[0072] As can be seen from the above, the photoresist provided in the embodiment of the present application introduces a fluorescent agent into the existing photoresist system so that the photoresist has a fluorescent function, so that the fluorescent function of the photoresist can be used to detect residual defects in the photoresist, and the size of the fluorescent agent is less than 100 nanometers, and the fluorescent agent can be removed by ashing. Therefore, after the photoresist is developed, the fluorescence emitted by the fluorescent agent in the residual photoresist can be used to achieve non-destructive detection of residual defects in the photoresist, and the cost of fluorescent detection is low and the efficiency is high. The fluorescent agent is easy to remove and will not cause fluorescent agent residue. Therefore, the detection cost of residual defects in the photoresist can be greatly reduced, the detection efficiency of residual defects in the photoresist can be improved, and the application prospects of the photoresist are broadened.

[0073] Based on the photoresist described in the above embodiments, this embodiment will be further described from the perspective of the application method of the photoresist.

[0074] See also Figure 5 , Figure 5 : is a schematic flow chart of a method for applying photoresist provided in an embodiment of the present application. The method can be applied to the scene of detecting photolithography pattern defects. The specific process of the method can be as follows:

[0075] S11. On one side of the target layer, a photoresist is coated to form a photoresist layer.

[0076] The cross-sectional structure diagram after step S11 is completed can be as follows: Figure 6 shown.

[0077] Specifically, the photoresist described in any of the above embodiments of the present application can be coated on the target layer 101 by using a coating method such as spraying, spin coating, roller coating or silk screen printing to form the photoresist layer 102.

[0078] Among them, the target layer 101 may refer to a semiconductor material layer that needs to be etched, or may refer to a semiconductor material layer that needs to be ion implanted. Specifically, the target layer may be a semiconductor substrate, or may be a semiconductor material layer (e.g., a dielectric layer or a metal layer) used to form a semiconductor device. The material of the semiconductor substrate may be silicon (Si), germanium (Ge), silicon germanium (GeSi), silicon carbide (SiC), silicon on insulator (SOI) or germanium on insulator (GOI), or may be other materials (e.g., III-V group compounds such as gallium arsenide). Certain impurity ions may be doped into the semiconductor substrate as needed, and the impurity ions may be N-type impurity ions or P-type impurity ions. The semiconductor material layer may be an amorphous carbon layer, an oxide layer, a nitride layer, a copper layer, a tungsten layer or an aluminum layer, etc., but is not limited thereto.

[0079] The photoresist may include a solvent and a resin, a polymer monomer, a photosensitizer and a fluorescent agent dispersed in the solvent, wherein the size of the fluorescent agent is less than 100 nanometers, and the fluorescent agent can be removed by ashing. In addition, it should be noted that the various components of the photoresist in this embodiment can refer to the specific implementation described in the above-mentioned photoresist embodiment, so it will not be repeated here.

[0080] S12. Patterning the photoresist layer to form a patterned photoresist layer.

[0081] The cross-sectional structure diagram after step S12 is completed can be as follows: Figure 7 As shown, the top view structure diagram after step S12 is completed can be as follows Figure 1 shown.

[0082] Specifically, Figure 7 As shown, the photoresist layer 102 on the target layer 101 may be exposed first, and then the exposed photoresist layer 102 may be developed to obtain a patterned photoresist layer 103 .

[0083] In some specific embodiments, Figure 6 and Figure 7 As shown, the preparation process of the patterned photoresist layer 103 may specifically include: coating the photoresist described in any of the above embodiments of the present application on the surface of the target layer 101, and drying to obtain a photoresist film (i.e., the photoresist layer 102); then, placing a mask plate above the photoresist layer 102, and using ultraviolet light (or other light beam energy) of a specific wavelength through the light-transmitting area of ​​the mask plate to expose the photoresist layer 102. During the exposure process, the photoresist in the exposure area of ​​the photoresist layer 102 receiving the light is exposed. A cross-linking and curing reaction occurs, so that it can have a different chemical solubility from the photoresist in the non-exposed area of ​​the photoresist layer 102 that does not receive light; thereafter, according to the difference in chemical solubility between the photoresist in the exposed area and the photoresist in the non-exposed area of ​​the photoresist layer 102, the exposed photoresist layer 102 can be differentially dissolved using a developer to form a photoresist pattern, thereby completing the development of the photoresist layer 102; then, the developed photoresist layer 102 can be dried to obtain a patterned photoresist layer 103 that forms a photoresist pattern.

[0084] S13. Perform fluorescence detection on the patterned photoresist layer, and determine whether there is residual photoresist corresponding to a non-target pattern in the patterned photoresist layer according to the detection result.

[0085] It should be noted that if Figure 1 and Figure 7 As shown, the embodiment of the present application introduces a fluorescent agent into the above-mentioned photoresist so that the patterned photoresist layer 103 prepared by the photoresist containing the fluorescent agent in the photolithography process has a fluorescent function, so that after the patterned photoresist layer 103 is formed, the patterned photoresist layer 103 can be subjected to fluorescence detection, and it can be determined whether there is residual photoresist B corresponding to the non-target pattern B in the patterned photoresist layer 103 based on the detection result.

[0086] The non-target pattern B may refer to other patterns in the patterned photoresist layer 103 except the target pattern A, and the residual photoresist B corresponding to the non-target pattern B may refer to the photoresist constituting the non-target pattern B. In addition, the target pattern A in the patterned photoresist layer 103 may be considered as what is expected to be formed in the photolithography process, that is, it may be considered as the portion of the photoresist layer 102 that needs to be retained and not removed by the developer during the development process of the photoresist layer 102; the non-target pattern B may be considered as what is not expected to be formed in the photolithography process, that is, it may be considered as the portion of the photoresist layer 102 that needs to be removed and not retained during the development process of the photoresist layer 102. In other words, if there is residual photoresist B corresponding to the non-target pattern B in the above-mentioned patterned photoresist layer 103, it can be considered that the patterned photoresist layer 103 formed after the above-mentioned photoresist layer 102 is exposed and developed has photolithography graphic defects; if there is no residual photoresist B corresponding to the non-target pattern B in the above-mentioned patterned photoresist layer 103, it can be considered that the patterned photoresist layer 103 formed after the above-mentioned photoresist layer 102 is exposed and developed has no photolithography graphic defects.

[0087] In some specific embodiments, Figure 1 and Figure 7 As shown, after forming the patterned photoresist layer 103, light of a specific wavelength (i.e., light having a wavelength within the absorption band of the fluorescent agent in the photoresist) may be used to irradiate the target area (e.g., Figure 1 The area where the mesoporous structure is located, or Figure 7 The target area is the area where the opening is located, and the fluorescence signal of the target area is detected at the same time. Based on the detected fluorescence signal, a detection result indicating whether there is residual photoresist B corresponding to the non-target pattern B in the patterned photoresist layer 103 is generated.

[0088] The fluorescence signal may include fluorescence intensity and / or fluorescence distribution characteristics, etc. Specifically, when the detected fluorescence intensity is greater than a preset intensity threshold, a detection result indicating that there is residual photoresist B corresponding to the non-target pattern B in the patterned photoresist layer 103 may be generated; when the detected fluorescence intensity is not greater than the preset intensity threshold, a detection result indicating that there is no residual photoresist B corresponding to the non-target pattern B in the patterned photoresist layer 103 may be generated; wherein the preset intensity threshold may be greater than or equal to zero.

[0089] Specifically, when the detection result indicates that there is residual photoresist B corresponding to the non-target pattern B in the patterned photoresist layer 103 , the detection result may include position information, which is used to indicate the position of the residual photoresist B corresponding to the non-target pattern B in the patterned photoresist layer 103 .

[0090] Furthermore, it should be noted that, compared with the prior art, in which a high-energy electron beam is emitted by a scanning electron microscope (SEM) to bombard the photoresist for photolithography pattern detection, there is a certain amount of loss in the bombarded photoresist, which in turn has an adverse effect on the main pattern (i.e., the target pattern). Figure 2 As shown, after the target pattern A is bombarded by the high-energy electron beam emitted by the electron scanning microscope, its edge area will suffer serious damage, resulting in an inward shrinkage phenomenon, so that the target pattern A becomes a pattern A'.

[0091] In this embodiment, Figure 1 and Figure 7 As shown, by introducing a fluorescent agent into the photoresist, the patterned photoresist layer 103 prepared by the photoresist containing the fluorescent agent in the photolithography process has a fluorescent function, so that after the patterned photoresist layer 103 is formed, the patterned photoresist layer 103 can be irradiated with light of a specific wavelength (i.e., light with a wavelength within the absorption band of the fluorescent agent in the photoresist), so that the patterned photoresist layer 103 itself can generate fluorescence of a specific wavelength, and then by detecting the fluorescence signal generated by the patterned photoresist layer 103 itself, the photolithography pattern defect B (i.e., the residual photoresist B corresponding to the non-target pattern B) can be detected without affecting the main pattern A (i.e., the target pattern A) in the patterned photoresist layer 103, that is, non-destructive detection of the photolithography pattern defect B can be achieved. In addition, the cost of fluorescence detection is low and the efficiency is high, so the detection cost of the photolithography pattern defect B is greatly reduced, and the detection efficiency of the photolithography pattern defect B is improved.

[0092] See also Figure 8 , Figure 8 1 is another schematic flow chart of the method for applying photoresist provided in an embodiment of the present application. The method can be applied to the scene of detecting whether the photoresist after ion implantation or etching is completely removed. The specific process of the method can be as follows:

[0093] S21. On one side of the target layer, coat the above-mentioned photoresist to form a photoresist layer.

[0094] The cross-sectional structure diagram after step S21 is completed can be as follows: Figure 6 Moreover, the specific implementation manner of S21 in this embodiment can refer to the specific implementation manner of S11 in the previous method embodiment, so it will not be repeated here.

[0095] S22. Patterning the photoresist layer to form a patterned photoresist layer.

[0096] The cross-sectional structure diagram after step S22 is completed can be as follows: Figure 7Moreover, the specific implementation manner of S22 in this embodiment can refer to the specific implementation manner of S12 in the previous method embodiment, so it will not be repeated here.

[0097] S23. Using the patterned photoresist layer as a mask, perform ion implantation on the target layer.

[0098] Specifically, Figure 7 As shown, during the ion implantation process of the target layer 101 , the area of ​​the target layer 101 covered by the patterned photoresist layer 103 is protected and cannot be implanted with ions, while the exposed area of ​​the target layer 101 is implanted with ions, so that the target layer 101 forms an ion implantation region.

[0099] S24. Remove the patterned photoresist layer, perform fluorescence detection on the surface of the target layer after the photoresist is removed, and determine the photoresist removal effect after ion implantation based on the detection result.

[0100] Specifically, the inventors of the present application also found during the research and development process that Figure 3 As shown in FIG. 1 , in the process of performing ion implantation on the target layer D using the patterned photoresist layer C as a mask, the implanted ions will cause the local photoresist of the patterned photoresist layer C (for example, the photoresist at the edge of the photolithography pattern) to be denatured, and the denatured photoresist C1 is difficult to be removed by dissolving or ashing, that is, in the process of removing the patterned photoresist layer C by dissolving or ashing, the denatured photoresist C1 will remain on the target layer D and cannot be removed (for example, Figure 4 As shown in the figure, the photoresist residue defect is caused, and in the subsequent process, this defect will lead to the electrical performance defect of the semiconductor device (such as chip) in the later stage, so it is particularly important to detect this defect.

[0101] Furthermore, it should be noted that if Figure 3 As shown, in this embodiment, by introducing a fluorescent agent into the photoresist, not only the patterned photoresist layer 103 prepared by the photoresist containing the fluorescent agent in the photolithography process has a fluorescent function, but also the photoresist C1 after the local denaturation of the patterned photoresist layer C has a fluorescent function. Therefore, after removing the patterned photoresist layer C after ion implantation, the surface of the target layer D after the removal of the photoresist can be subjected to fluorescence detection, and the photoresist removal effect after the ion implantation can be determined based on the detection result.

[0102] In some specific embodiments, Figure 3As shown, after removing the patterned photoresist layer C after ion implantation, the surface of the target layer D that was originally covered by the patterned photoresist layer C and is currently exposed can be irradiated with light of a specific wavelength (i.e., light with a wavelength within the absorption band of the fluorescent agent in the photoresist), and the fluorescence signal of the surface of the target layer D can be detected simultaneously, and based on the detected fluorescence signal, a detection result is generated to indicate whether there is residual photoresist (i.e., denatured photoresist C1) on the surface of the target layer D.

[0103] The fluorescence signal may include fluorescence intensity and / or fluorescence distribution characteristics, etc. Specifically, when the detected fluorescence intensity is greater than a preset intensity threshold, a detection result indicating that residual denatured photoresist C1 exists on the surface of the target layer D may be generated; when the detected fluorescence intensity is not greater than the preset intensity threshold, a detection result indicating that residual denatured photoresist C1 does not exist on the surface of the target layer D may be generated; wherein the preset intensity threshold may be greater than or equal to zero.

[0104] Specifically, when the detection result indicates that there is residual denatured photoresist C1 on the surface of the target layer D, the detection result may include position information, where the position information is used to indicate the position of the residual denatured photoresist C1 on the surface of the target layer D.

[0105] Furthermore, it should be noted that, in this embodiment, Figure 3 As shown, by introducing a fluorescent agent into the photoresist, not only the patterned photoresist layer 103 prepared by the photoresist containing the fluorescent agent in the photolithography process has a fluorescent function, but also the photoresist C1 that has been partially denatured after ion implantation has a fluorescent function. Therefore, after removing the patterned photoresist layer C after ion implantation, the surface of the target layer D that was originally covered by the patterned photoresist layer C and is currently exposed can be irradiated with light of a specific wavelength (i.e., light with a wavelength within the absorption band of the fluorescent agent in the photoresist), and the fluorescent signal of the surface of the target layer D can be detected at the same time. If the fluorescent signal is detected, it can be indicated that there is residual denatured photoresist C1 on the surface of the target layer D. If no fluorescent signal is detected, it can be indicated that there is no residual denatured photoresist C1 on the surface of the target layer D. That is, non-destructive detection of whether the photoresist after ion implantation has been removed cleanly can be achieved. Furthermore, the cost of fluorescence detection is low and the efficiency is high, thus greatly reducing the detection cost of detecting whether the photoresist after ion implantation is completely removed and improving the detection efficiency of detecting whether the photoresist after ion implantation is completely removed.

[0106] In some embodiments, the above step S23 and the above step S24 may also be replaced by step S25 and step S26, respectively, as follows:

[0107] S25. Using the patterned photoresist layer as a mask, the target layer is etched.

[0108] Specifically, Figure 7 As shown, during the etching process of the target layer 101 , the area of ​​the target layer 101 covered by the patterned photoresist layer 103 is protected and cannot be etched, while the exposed area of ​​the target layer 101 is etched, so that the target layer 101 forms a pattern.

[0109] S26. Remove the patterned photoresist layer, perform fluorescence detection on the surface of the target layer after the photoresist is removed, and determine the photoresist removal effect after etching based on the detection result.

[0110] Specifically, after removing the patterned photoresist layer after etching, the surface of the target layer that was originally covered by the patterned photoresist layer and is currently exposed can be irradiated with light of a specific wavelength (i.e., light with a wavelength within the absorption band of the fluorescent agent in the photoresist), and the fluorescence signal of the surface of the target layer can be detected at the same time, and based on the detected fluorescence signal, a detection result indicating whether there is residual photoresist on the surface of the target layer is generated. The fluorescence signal may include fluorescence intensity and / or fluorescence distribution characteristics, etc. Moreover, when the detected fluorescence intensity is greater than a preset intensity threshold, a detection result indicating that there is residual photoresist on the surface of the target layer can be generated; when the detected fluorescence intensity is not greater than the preset intensity threshold, a detection result indicating that there is no residual photoresist on the surface of the target layer can be generated; wherein the preset intensity threshold can be greater than or equal to zero.

[0111] Specifically, when the detection result indicates that there is residual photoresist on the surface of the target layer, the detection result may include position information, where the position information is used to indicate the position of the residual photoresist on the surface of the target layer.

[0112] Furthermore, it should be noted that, in this embodiment, by introducing a fluorescent agent into the photoresist, the patterned photoresist layer 103 prepared by the photoresist containing the fluorescent agent in the photolithography process has a fluorescent function, so that after removing the patterned photoresist layer after etching, the surface of the target layer originally covered by the patterned photoresist layer and currently exposed can be irradiated with light of a specific wavelength (i.e., light with a wavelength within the absorption band of the fluorescent agent in the photoresist), and the fluorescent signal on the surface of the target layer can be detected at the same time. If the fluorescent signal is detected, it can be indicated that there is residual photoresist on the surface of the target layer. If the fluorescent signal is not detected, it can be indicated that there is no residual photoresist on the surface of the target layer, that is, it can be realized to non-destructively detect whether the photoresist after etching is completely removed. Moreover, the cost of fluorescent detection is low and the efficiency is high, thereby greatly reducing the detection cost of detecting whether the photoresist after etching is completely removed, and improving the detection efficiency of detecting whether the photoresist after etching is completely removed.

[0113] See also Fig. 9 , Fig. 9 1 is another schematic flow chart of the method for applying photoresist provided in an embodiment of the present application. The method can be applied to the scene of stopping etching or chemical mechanical polishing. The specific process of the method can be as follows:

[0114] S31. Coating a photoresist on the semiconductor substrate to form a photoresist layer as an etching stop layer or a chemical mechanical polishing stop layer.

[0115] Specifically, Fig.10 As shown, the photoresist described in any of the above embodiments of the present application can be coated on the semiconductor substrate 201 by spraying, spin coating, roller coating or silk screen printing to form a photoresist layer as an etching stop layer or a chemical mechanical polishing stop layer 202.

[0116] The semiconductor substrate 201 may be made of silicon (Si), germanium (Ge), silicon germanium (GeSi), silicon carbide (SiC), silicon on insulator (SOI) or germanium on insulator (GOI), or other materials (e.g., III-V group compounds such as gallium arsenide). The semiconductor substrate 201 may be doped with certain impurity ions as required, and the impurity ions may be N-type impurity ions or P-type impurity ions.

[0117] The photoresist may include a solvent and a resin, a polymer monomer, a photosensitizer and a fluorescent agent dispersed in the solvent, wherein the size of the fluorescent agent is less than 100 nanometers, and the fluorescent agent can be removed by ashing. In addition, it should be noted that the various components of the photoresist in this embodiment can refer to the specific implementation described in the above-mentioned photoresist embodiment, so it will not be repeated here.

[0118] S32. Form a target layer on the upper surface of the stop layer.

[0119] Specifically, Fig.10 As shown, after photoresist is coated on the semiconductor substrate 101 to form a photoresist layer as an etching or chemical mechanical polishing stop layer 202, a target layer 203 can be formed on the upper surface of the stop layer 202 through a deposition process.

[0120] The deposition process may include electron beam deposition process, magnetron sputtering deposition process, thermal evaporation process, electroplating process and other chemical or physical, gas phase or liquid phase deposition processes.

[0121] The target layer 203 may refer to a semiconductor material layer that needs to be etched or chemically mechanically polished. Specifically, the semiconductor material layer may be a dielectric layer or a metal layer, etc. Exemplarily, the semiconductor material layer may be an amorphous carbon layer, an oxide layer, a nitride layer, a copper layer, a tungsten layer or an aluminum layer, etc., but is not limited thereto.

[0122] S33. Etch or chemically mechanically polish the target layer, and detect the fluorescence intensity of the currently exposed layer at the same time. When the detected fluorescence intensity is greater than a preset intensity threshold, stop etching or chemically mechanically polishing the target layer. The preset intensity threshold is greater than or equal to 0.

[0123] It should be noted that if Fig.10 As shown, the embodiment of the present application introduces a fluorescent agent into the above-mentioned photoresist so that the stop layer 202 prepared by the photoresist containing the fluorescent agent has a fluorescent function, so that during the etching or chemical mechanical polishing process of the target layer 203, the fluorescence intensity of the currently exposed layer can be detected, and when the detected fluorescence intensity is not greater than the preset intensity threshold, it can be considered that the upper surface of the stop layer 202 is not exposed, and the etching or chemical mechanical polishing of the target layer 203 needs to be maintained; when the detected fluorescence intensity is greater than the preset intensity threshold, it can be considered that the upper surface of the stop layer 202 is exposed, and the etching or chemical mechanical polishing of the target layer 203 needs to be stopped; wherein the preset intensity threshold can be greater than or equal to 0.

[0124] Among them, the method for etching the target layer 203 can be: using an isotropic etching process (for example, a wet etching process) or an anisotropic etching process (for example, a plasma etching process, a reactive ion etching process or other dry etching processes) to etch the target layer 203.

[0125] In some specific embodiments, the above-mentioned step S33 may specifically include: etching or chemical mechanical polishing the above-mentioned target layer 203, and during the etching or chemical mechanical polishing process, using light of a specific wavelength (i.e., light with a wavelength within the absorption band of the fluorescent agent in the photoresist) to irradiate the side of the target layer 203 away from the stop layer 202, and at the same time detecting the fluorescence intensity of the currently exposed layer, so that the surface of the stop layer 202 originally covered by the target layer 203 can emit fluorescence under the excitation of the light after being exposed, and can be detected in time, so as to realize timely stopping of etching or chemical mechanical polishing, thereby effectively avoiding over-grinding or over-etching and causing damage to other film layer structures.

[0126] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A photoresist, characterized in that: include: Solvents; Resin, polymer monomer, photosensitizer and fluorescent agent are dispersed in the solvent, wherein the size of the fluorescent agent is less than 100 nanometers and the fluorescent agent can be removed by ashing.

2. The photoresist according to claim 1, characterized in that The fluorescent agent includes carbon-based fluorescent nanomaterials and / or organic fluorescent dyes.

3. The photoresist according to claim 2, characterized in that The carbon-based fluorescent nanomaterial includes at least one of nanodiamonds, carbon nanotubes, graphene oxide nanoparticles and carbon-based quantum dots.

4. The photoresist according to claim 2, characterized in that The organic fluorescent dye includes fluorescein dye and / or rhodamine dye.

5. The photoresist according to claim 1, characterized in that The mass fraction of the fluorescent agent in the photoresist is 0.1-10%.

6. The photoresist according to claim 1, characterized in that The absorption wavelength range of the fluorescent agent is 150-650 nm, and the emission wavelength range of the fluorescent agent is 300-700 nm.

7. The photoresist according to claim 1, characterized in that The resin includes at least one of an alkali-soluble resin, a thermosetting resin, and a photocurable resin.

8. The photoresist according to claim 7, characterized in that The resin includes at least one of phenolic resin, acrylic resin, polyvinyl cinnamate and silicone resin.

9. The photoresist according to claim 1, characterized in that The photoresist further includes an additive, wherein the additive includes at least one of a surfactant, a silane coupling agent, and a defoaming agent.

10. The photoresist according to claim 1, characterized in that The photoresist further includes a colorant, which is used for coloring the photoresist and includes a pigment and / or a dye.

11. The photoresist according to claim 1, characterized in that The polymer monomers include free radical monomers and / or cationic monomers.

12. The photoresist according to claim 11, characterized in that The polymer monomer includes at least one of an acrylate monomer, a vinyl monomer, a vinyl ether monomer and an epoxy monomer.

13. The photoresist according to claim 1, characterized in that The photosensitizer includes a free radical photosensitizer and / or a cationic photosensitizer.

14. The photoresist according to claim 13, characterized in that The photosensitizer includes at least one of ketoxime lipid photoinitiator, α-amino ketone photoinitiator, acetophenone photoinitiator, aromatic ketone photoinitiator and macromolecular initiator.

15. The photoresist according to claim 1, characterized in that The solvent is an organic solvent or an aqueous solvent.

16. The photoresist according to claim 15, characterized in that The solvent includes at least one of aliphatic alcohol, glycol ether, ethyl acetate, butyl acetate, methyl ethyl ketone, methyl isobutyl ketone, ethylene glycol monomethyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone, xylene and methyl pyrrolidone.

17. A method for applying a photoresist, characterized in that: include: On one side of the target layer, coating the photoresist according to any one of claims 1 to 16 to form a photoresist layer; Performing patterning on the photoresist layer to form a patterned photoresist layer; The patterned photoresist layer is subjected to fluorescence detection, and it is determined whether there is residual photoresist corresponding to a non-target pattern in the patterned photoresist layer according to the detection result.

18. A method for applying a photoresist, characterized in that: include: Coating the photoresist according to any one of claims 1 to 16 on a semiconductor substrate to form a photoresist layer as an etching stop layer or a chemical mechanical polishing stop layer; forming a target layer on an upper surface of the stop layer; The target layer is etched or chemically mechanically polished, and the fluorescence intensity of the currently exposed layer is detected. When the detected fluorescence intensity is greater than a preset intensity threshold, the etching or chemical mechanical polishing of the target layer is stopped, and the preset intensity threshold is greater than or equal to 0.

19. A method for applying a photoresist, characterized in that: include: On one side of the target layer, coating the photoresist according to any one of claims 1 to 16 to form a photoresist layer; Performing patterning on the photoresist layer to form a patterned photoresist layer; Using the patterned photoresist layer as a mask, performing ion implantation or etching on the target layer; The patterned photoresist layer is removed, and a fluorescence detection is performed on the surface of the target layer after the removal of the photoresist, and the photoresist removal effect after ion implantation or etching is determined according to the detection result.

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