Back hole through hole monitoring method
By conducting capacitance density detection on semiconductor workpieces, the problem of time-consuming and low efficiency caused by the quality inspection of back holes in the prior art is solved, and efficient and reliable back hole monitoring is achieved.
Patent Information
- Application Number
- CN202411534878.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-31
- Publication Date
- 2025-02-11
AI Technical Summary
During the existing wafer processing process, back hole quality inspection relies on manual microscope observation, which takes a long time, has a large workload, is inefficient and cannot guarantee the inspection results.
The back hole through-hole monitoring method is adopted to obtain the workpiece with wax and wafer, and perform the hole-hole back gold operation on the back of the workpiece, obtain the detection workpiece, and conduct capacitance density detection, and determine whether the workpiece is qualified based on the capacitance density data.
Reduce manual inspection, improve detection efficiency, ensure the reliability of detection results, and save time in the back hole inspection of the semiconductor back gold process.
Smart Images
Figure CN119419130A_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the field of semiconductor technology, and more particularly to a back hole monitoring method. Background Art
[0002] In the semiconductor field, after the front side process is completed, the wafer will be mounted and the back side process will begin; the back side process includes wafer back thinning, back hole process and back gold process; in the back hole process, the inductive plasma ICP etching back hole process is followed by microscope inspection. Because the back hole is relatively small and needs to be focused to the bottom of the hole, the microscope magnification needs to be adjusted to the maximum (eyepiece X10 with objective lens X100), and the observation field of view is small. It takes a lot of time and workload to inspect the entire surface and the entire batch, and the inspection is done by workers, which is highly subjective and cannot guarantee the product inspection yield. Summary of the invention
[0003] An embodiment of the present application provides a back hole through-hole monitoring method to solve the problem that the back hole quality of existing wafer processing is inspected manually, which is time-consuming, labor-intensive, inefficient and the inspection results cannot be guaranteed.
[0004] In a first aspect, an embodiment of the present application provides a back hole monitoring method, comprising the following steps:
[0005] Obtaining a workpiece having wax coating and a wafer, and performing a back-hole back-metal operation on the back side of the workpiece to obtain a test workpiece with a back hole to be monitored;
[0006] Performing capacitance density detection on the detection workpiece to obtain capacitance density data;
[0007] Whether the detected workpiece is qualified is determined according to the capacitance density data.
[0008] Optionally, judging whether the inspection workpiece is qualified based on the capacitance density data includes: if the capacitance density data is equal to the capacitance density threshold, the back hole through hole processed by the inspection workpiece is qualified; if the capacitance density data is not equal to the capacitance density threshold, the back hole through hole processed by the inspection workpiece is unqualified.
[0009] Optionally, the back hole processed in the inspection workpiece is unqualified includes that the back hole processed in the inspection workpiece is not completely etched into a through hole and the back hole processed in the inspection workpiece is not a through hole.
[0010] Optionally, performing a back-hole back-metal operation on the back side of the workpiece to obtain a test workpiece with a back hole to be monitored includes:
[0011] Applying a first photoresist on the back side of the workpiece and performing a patterning process to obtain a first processed workpiece;
[0012] Acquiring thickness data of a substrate in the workpiece, and etching the substrate of the first processed workpiece by inductive plasma etching according to the thickness data to obtain a second processed workpiece;
[0013] removing the first photoresist of the second processed workpiece to obtain a third processed workpiece having a back hole;
[0014] Performing sputtering and electroplating treatment on the back side of the substrate and the back hole of the third processed workpiece to obtain a back-gold processed workpiece;
[0015] The wax coating and the wafer of the back-metal-processed workpiece are removed to obtain a detection workpiece with a back hole to be monitored.
[0016] Optionally, obtaining a workpiece having a wax coating and a wafer comprises:
[0017] Obtaining a substrate, and manufacturing a first electrode based on the substrate to obtain a first component;
[0018] Manufacturing a first dielectric layer based on the first component to obtain a second component;
[0019] Manufacturing a second electrode based on the second component to obtain a third component;
[0020] Manufacturing a third electrode based on the third component to obtain a fourth component;
[0021] The fourth component is subjected to wax coating, chip mounting and grinding treatments in sequence to obtain a workpiece having wax coating and a chip.
[0022] Optionally, a first electrode is manufactured based on the substrate to obtain a first component, including: coating a second photoresist on the front side of the substrate, sequentially performing patterning and metal evaporation treatment on the second photoresist to obtain a first semi-finished product; and removing the second photoresist on the first semi-finished product to obtain the first component.
[0023] Optionally, manufacturing a first dielectric layer based on the first component to obtain a second component includes:
[0024] Depositing a first dielectric layer on the front surface of the first component to obtain a second semi-finished product;
[0025] Sequentially coating a third photoresist on the front side of the second semi-finished product and performing pattern opening treatment to obtain a third semi-finished product;
[0026] Performing an etching process on the first dielectric layer of the third semi-finished product to obtain a fourth semi-finished product;
[0027] The third photoresist of the fourth semi-finished product is removed to obtain a second component.
[0028] Optionally, the thickness of the first dielectric layer is And / or, the first dielectric layer is made of silicon nitride or silicon dioxide.
[0029] Optionally, manufacturing the second electrode based on the second component to obtain the third component includes: coating a fourth photoresist on the front surface of the second component, and sequentially performing patterning and metal evaporation on the fourth photoresist to obtain a fifth semi-finished product; removing the fourth photoresist on the fifth semi-finished product to obtain the third component; and / or,
[0030] The third electrode is manufactured based on the third component to obtain the fourth component, including: coating a fifth photoresist on the front side of the third component, sequentially performing patterning and metal evaporation treatment on the fifth photoresist to obtain a sixth semi-finished product; and removing the fifth photoresist on the sixth semi-finished product to obtain the fourth component.
[0031] Optionally, the substrate thickness of the workpiece is 50um, 100um, 120um, 150um or 200um.
[0032] An embodiment of the present application provides a back hole through-hole monitoring method, including obtaining a workpiece with wax coating and a wafer, performing a back hole back-gold operation on the back of the workpiece to obtain a detection workpiece with a back hole to be monitored; performing a capacitance density detection on the detection workpiece to obtain capacitance density data; and judging whether the detection workpiece is qualified according to the capacitance density data. The back hole through-hole monitoring method detects capacitance density data on the detection workpiece of the back process of the semiconductor, and then realizes the back hole monitoring of the semiconductor according to the capacitance density data, thereby reducing manual detection, improving detection efficiency and ensuring the detection results, and solving the problem that the back hole quality inspection of the existing wafer processing adopts a manual method, which takes a long time, has a large workload, is inefficient and the inspection results cannot be guaranteed.
[0033] The back hole monitoring method determines whether the processed back hole is qualified by detecting capacitance density data, which saves a lot of inspection time for detecting back hole vias in semiconductor back gold process, improves quality monitoring, and improves the feasibility of back hole via yield data. BRIEF DESCRIPTION OF THE DRAWINGS
[0034] In order to more clearly illustrate the technical solution in an embodiment of the present application, the following briefly introduces the drawings required for use in the description of the embodiment. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can also obtain other drawings based on these drawings without creative work.
[0035] In order to more completely understand the present application and its beneficial effects, the following description will be made in conjunction with the accompanying drawings. In the following description, the same reference numerals represent the same parts.
[0036] Figure 1 A flowchart of the steps of a back hole monitoring method provided for one embodiment of the present application.
[0037] Figure 2 A schematic structural diagram of a workpiece in a back hole monitoring method provided in one embodiment of the present application.
[0038] Figure 3 A schematic structural diagram of a workpiece detected in a back hole monitoring method provided in one embodiment of the present application.
[0039] Figure 4 A capacitance density detection diagram of a workpiece in a back hole monitoring method provided in one embodiment of the present application.
[0040] Figure 5 A graph showing the relationship between capacitance density data and back via area in a back via monitoring method provided in one embodiment of the present application.
[0041] Figure 6 In a back hole monitoring method provided in one embodiment of the present application, a workpiece is detected as a defective pattern that is not completely etched.
[0042] Figure 7 An unqualified image of a workpiece detected as not having a through hole in a back hole through hole monitoring method provided in one embodiment of the present application.
[0043] Figure 8 A schematic structural diagram of a first processed workpiece in a back hole through-hole monitoring method provided in one embodiment of the present application.
[0044] Fig. 9 A schematic structural diagram of a second processed workpiece in a back hole through-hole monitoring method provided in one embodiment of the present application.
[0045] Fig.10 A schematic structural diagram of a third processed workpiece in a back hole through-hole monitoring method provided in one embodiment of the present application.
[0046] Fig.11 A schematic structural diagram of a back-metal-processed workpiece in a back-hole through-hole monitoring method provided in one embodiment of the present application.
[0047] Fig.12 A schematic structural diagram of a first semi-finished product in a back hole monitoring method provided in one embodiment of the present application.
[0048] Fig.13A schematic structural diagram of a first component in a back hole monitoring method provided in one embodiment of the present application.
[0049] Fig.14 A schematic structural diagram of a third semi-finished product in a back hole monitoring method provided in one embodiment of the present application.
[0050] Fig.15 A schematic structural diagram of a fourth semi-finished product in a back hole monitoring method provided in one embodiment of the present application.
[0051] Fig.16 A schematic structural diagram of a second component in a back hole monitoring method provided in one embodiment of the present application.
[0052] Fig.17 A schematic structural diagram of a fifth semi-finished product in a back hole monitoring method provided in one embodiment of the present application.
[0053] Fig.18 A schematic structural diagram of a third component in a back hole monitoring method provided in one embodiment of the present application.
[0054] Fig.19 A schematic structural diagram of a fourth component in a back hole monitoring method provided in one embodiment of the present application.
[0055] Fig. 20 A schematic structural diagram of wax coating and patching of the fourth component in a back hole monitoring method provided in one embodiment of the present application.
[0056] Fig.21 A schematic diagram of the distribution of capacitance density data detected in a back hole monitoring method provided in one embodiment of the present application. DETAILED DESCRIPTION
[0057] The technical scheme in one embodiment of the present application will be clearly and completely described below in conjunction with the drawings in one embodiment of the present application. Obviously, the described embodiment is only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application.
[0058] Patent terms:
[0059] GaAs refers to gallium arsenide.
[0060] Wafer shot refers to the exposure area of the wafer by the stepper during the lithography process. This area contains several chip patterns.
[0061] An embodiment of the present application provides a back hole through-hole monitoring method to solve the problem that the back hole quality of existing wafer processing is inspected manually, which is time-consuming, labor-intensive, inefficient and the inspection results cannot be guaranteed.
[0062] Embodiment 1:
[0063] An embodiment of the present application provides a back hole monitoring method, for example, see Figure 1 , Figure 1 A flowchart of a back hole monitoring method provided in accordance with an embodiment of the present application is provided. Figure 2 A schematic diagram of the structure of a workpiece in a back hole through-hole monitoring method provided in one embodiment of the present application, Figure 3 A schematic structural diagram of a workpiece detected in a back hole monitoring method provided in one embodiment of the present application.
[0064] like Figures 1 to 3 As shown, the present invention provides a back hole through-hole monitoring method, comprising the following steps:
[0065] S100. Obtaining a workpiece having a wax coating and a wafer, performing a back hole back gold operation on the back of the workpiece, and obtaining a detection workpiece with a back hole to be monitored;
[0066] S200. Perform capacitance density detection on the detection workpiece to obtain capacitance density data;
[0067] S300. Determine whether the detected workpiece is qualified based on the capacitance density data.
[0068] It is further explained that if Figure 2 As shown, in step S100, the workpiece may be a workpiece that has been manufactured with wax coating and wafer, and the workpiece may be a semiconductor. Figure 3 As shown, in step S100, a detection workpiece with a back hole to be monitored is also obtained.
[0069] Figure 4 A capacitance density detection diagram of a workpiece in a back hole monitoring method provided in one embodiment of the present application.
[0070] It is further explained that if Figure 4 As shown, in step S200, the capacitance density of the inspection workpiece is inspected to obtain capacitance density data. Figure 4 In the figure, a capacitor for detecting the workpiece is formed in the dotted box, wherein the back-metal is used as the lower electrode of the capacitor, and the second electrode and the third electrode of the workpiece constitute the upper electrode of the capacitor. The back-hole monitoring method reflects the back-hole situation by measuring the capacitance density. It can be understood that different back-hole degrees will affect the capacitance density value.
[0071] It is further explained that in step S300, whether the inspection workpiece is qualified is determined based on the capacitance density data obtained in step S200. In this embodiment, the back hole monitoring method detects the capacitance density data of the inspection workpiece of the back process of the semiconductor and uses the capacitance density data to realize the back hole monitoring of the semiconductor.
[0072] An embodiment of the present application provides a back hole through-hole monitoring method, including obtaining a workpiece with wax coating and a wafer, performing a back hole back gold operation on the back of the workpiece to obtain a detection workpiece with a back hole to be monitored; performing a capacitance density detection on the detection workpiece to obtain capacitance density data; and judging whether the detection workpiece is qualified according to the capacitance density data. The back hole through-hole monitoring method detects capacitance density data on the detection workpiece of the back process of the semiconductor, and then realizes the back hole monitoring of the semiconductor according to the capacitance density data, thereby reducing manual detection, improving detection efficiency and ensuring the detection results, and solving the problem that the back hole quality inspection of the existing wafer processing adopts a manual method, which takes a long time, has a large workload, is inefficient and the inspection results cannot be guaranteed.
[0073] Figure 5 A graph showing the relationship between capacitance density data and back hole area in a back hole monitoring method provided in one embodiment of the present application, Figure 6 In a back hole monitoring method provided in an embodiment of the present application, a workpiece is detected as an unqualified pattern that is not completely etched. Figure 7 An unqualified image of a workpiece detected as not having a through hole in a back hole through hole monitoring method provided in one embodiment of the present application.
[0074] like Figure 5 As shown, in the invention embodiment of the application, judging whether the detected workpiece is qualified according to the capacitance density data includes: if the capacitance density data is equal to the capacitance density threshold, the back hole through hole processed by the detected workpiece is qualified; if the capacitance density data is not equal to the capacitance density threshold, the back hole through hole processed by the detected workpiece is not qualified. The back hole through hole processed by the detected workpiece is not qualified, including that the back hole processed by the detected workpiece is not completely etched into a through hole and that the back hole processed by the detected workpiece is not a through hole.
[0075] It is further explained that the capacitance density threshold can be set according to the requirements. In this embodiment, the capacitance density threshold can be selected as 400pF / mm 2 ,like Figure 6 As shown, the capacitance density data is greater than the capacitance density threshold value, and the back hole of the inspection workpiece is not completely etched. It can be understood that the back hole of the inspection workpiece is an unqualified product that is not completely etched. Figure 7 As shown, the capacitance density data is less than the capacitance density threshold value, and the back hole processed in the detection workpiece is not a through hole. It can be understood that the back hole of the processed detection workpiece is not a through hole and is a defective product.
[0076] Figure 8 A schematic structural diagram of a first processed workpiece in a back hole through-hole monitoring method provided in an embodiment of the present application, Fig. 9 A schematic diagram of the structure of a second processed workpiece in a back hole through-hole monitoring method provided in an embodiment of the present application, Fig.10 A schematic diagram of the structure of a third workpiece processed in a back hole through-hole monitoring method provided in an embodiment of the present application, Fig.11 A schematic structural diagram of a back-metal-processed workpiece in a back-hole through-hole monitoring method provided in one embodiment of the present application.
[0077] like Figures 8 to 11 As shown, in the embodiment of the invention of the application, a back hole back metallization operation is performed on the back of the workpiece to obtain a detection workpiece with a back hole to be monitored, including:
[0078] Applying a first photoresist on the back of the workpiece and performing a pattern opening process to obtain a first processed workpiece;
[0079] Acquire thickness data of a substrate in a workpiece, and etch the substrate of the first processed workpiece by inductive plasma etching according to the thickness data to obtain a second processed workpiece;
[0080] removing the first photoresist of the second processed workpiece to obtain a third processed workpiece having a back hole;
[0081] Performing sputtering and electroplating treatment on the back side of the substrate and the back hole of the third processed workpiece to obtain a back-gold processed workpiece;
[0082] The wax coating and wafer of the back-metal-processed workpiece are removed to obtain the inspection workpiece with the back hole to be monitored.
[0083] It is further explained that the back hole monitoring method first coats the first photoresist on the back of the workpiece and then performs an opening process to obtain the following Figure 8 Secondly, the substrate of the first workpiece is etched by inductive plasma etching ICP, and the etching depth is the thickness data of the substrate as shown in FIG. Fig. 9 The second processed workpiece shown in FIG. 1 is a second processed workpiece; again, the first photoresist on the second processed workpiece is removed to complete the back hole through hole process, and the Fig.10 Again, the back surface of the substrate and the entire surface where the back hole is located of the third processed workpiece are sputtered and electroplated to obtain Fig.11 The back-gold processing workpiece shown in the figure is completed; finally, the wax coating and the wafer of the back-gold processing workpiece are removed to obtain the following Figure 3 In this embodiment, before the capacitance density test of the test workpiece is performed, the back side of the test workpiece is placed on a supporting fixture (such as Figure 3 The carrier shown is carried on).
[0084] In an embodiment of the invention of the application, obtaining a workpiece having a wax coating and a wafer includes:
[0085] Obtaining a substrate, and manufacturing a first electrode based on the substrate to obtain a first component;
[0086] Manufacturing a first dielectric layer based on the first component to obtain a second component;
[0087] Manufacturing a second electrode based on the second component to obtain a third component;
[0088] Manufacturing a third electrode based on the third component to obtain a fourth component;
[0089] The fourth component is subjected to wax coating, chip mounting and grinding treatments in sequence to obtain a workpiece having wax coating and a chip.
[0090] It is further explained that the substrate is made of gallium arsenide GaAs material.
[0091] Fig.12 A schematic structural diagram of a first semi-finished product in a back hole through-hole monitoring method provided in an embodiment of the present application, Fig.13 A schematic structural diagram of a first component in a back hole monitoring method provided in one embodiment of the present application.
[0092] like Fig.12 and Fig.13 As shown, in the invention embodiment of the application, a first electrode is manufactured based on a substrate to obtain a first component, including: coating a second photoresist on the front side of the substrate, sequentially performing patterning and metal evaporation treatment on the second photoresist to obtain a first semi-finished product; removing the second photoresist on the first semi-finished product to obtain the first component.
[0093] It is further explained that a second photoresist is coated on one end surface of the substrate, and then the second photoresist is patterned and metal is evaporated to obtain Fig.12 Finally, the second photoresist on the first semi-finished product is removed to obtain Fig.13 The first component is shown.
[0094] Fig.14 A schematic structural diagram of a third semi-finished product in a back hole through-hole monitoring method provided in an embodiment of the present application, Fig.15 A schematic structural diagram of a fourth semi-finished product in a back hole through-hole monitoring method provided in an embodiment of the present application, Fig.16 A schematic structural diagram of a second component in a back hole monitoring method provided in one embodiment of the present application.
[0095] like Figures 14 to 16 As shown, in the invention embodiment of the application, the first dielectric layer is manufactured based on the first component to obtain the second component including:
[0096] Depositing a first dielectric layer on the front surface of the first component to obtain a second semi-finished product;
[0097] The third photoresist is sequentially coated on the front side of the second semi-finished product, and the pattern is opened to obtain a third semi-finished product;
[0098] Performing an etching process on the first dielectric layer of the third semi-finished product to obtain a fourth semi-finished product;
[0099] The third photoresist of the fourth semi-finished product is removed to obtain a second component.
[0100] It is further explained that the thickness of the first dielectric layer is And / or, the first dielectric layer is made of silicon nitride or silicon dioxide. In this embodiment, the first dielectric layer is deposited on the front surface of the first component, and the third photoresist is first coated on the first dielectric layer for patterning to obtain Fig.14 Then, the first dielectric layer on the third semi-finished product is etched according to the thickness of the first dielectric layer to obtain Fig.15 Finally, the third photoresist on the fourth semi-finished product is removed to obtain Fig.16 The second component shown in FIG. The thickness of the first dielectric layer is preferably Within.
[0101] Fig.17 A schematic structural diagram of a fifth semi-finished product in a back hole through-hole monitoring method provided in an embodiment of the present application, Fig.18 A schematic diagram of the structure of the third component in the back hole monitoring method provided by one embodiment of the present application, Fig.19 A schematic structural diagram of a fourth component in a back hole monitoring method provided in one embodiment of the present application.
[0102] like Figures 17 to 19 As shown, in the embodiment of the invention of the present application, the second electrode is manufactured based on the second component to obtain the third component, including: coating the fourth photoresist on the front surface of the second component, and sequentially performing patterning and metal evaporation on the fourth photoresist to obtain a fifth semi-finished product; removing the fourth photoresist on the fifth semi-finished product to obtain the third component. The third electrode is manufactured based on the third component to obtain the fourth component, including: coating the fifth photoresist on the front surface of the third component, and sequentially performing patterning and metal evaporation on the fifth photoresist to obtain a sixth semi-finished product; removing the fifth photoresist on the sixth semi-finished product to obtain the fourth component.
[0103] It is further explained that the back hole through-hole monitoring method is to first coat the front side of the second component with a fourth photoresist, and then perform metal evaporation to obtain the following Fig.17Finally, the fourth photoresist on the fifth semi-finished product is removed to obtain Fig.18 In this embodiment, the back hole through-hole monitoring method adopts the steps and working principles of manufacturing the third component with the second electrode to manufacture the fourth component with the third electrode, and obtains the following Fig.19 The fourth component shown.
[0104] Fig. 20 A schematic structural diagram of wax coating and patching of the fourth component in a back hole monitoring method provided in one embodiment of the present application.
[0105] In the embodiment of the invention of the present application, the back hole through-hole monitoring method is to coat the electrode end of the fourth component with wax, and a chip is mounted on the waxed fourth component by a chip mounter to obtain the following Fig. 20 Workpiece shown with wax coating and wafer.
[0106] In the inventive embodiment of the present application, a back hole gold-plating operation is performed on the back side of a workpiece to obtain a back hole to be monitored. Then, the back hole through-hole monitoring method grinds the workpiece to grind the substrate thickness of the workpiece to a target thickness, which is also called the substrate thickness data.
[0107] In the inventive embodiment of the present application, the substrate thickness of the workpiece is 50um, 100um, 120um, 150um or 200um. In this embodiment, the first dielectric layer is made of silicon nitride, the substrate thickness is selected to be 50um, and the back hole size of the workpiece can be selected to be 15×30um. The back hole through-hole monitoring method determines whether the processed back hole through-hole is qualified by detecting the capacitance density data, which saves a lot of inspection time for detecting the back hole through-hole of the semiconductor back gold process, improves quality monitoring, and improves the feasibility of the back hole through-hole yield data.
[0108] Fig.21 A schematic diagram of the distribution of capacitance density data detected in a back hole monitoring method provided in one embodiment of the present application.
[0109] In the embodiment of the invention of the present application, the back hole through hole monitoring method detects the capacitance density data of the back hole through hole of the workpiece, and obtains the following Fig.21 From the distribution diagram of capacitance density data shown, it can be seen that the central area of the back hole via is in the non-through hole state, and the detected capacitance density data is 310. The closer this value is to the capacitance density threshold of 400, the thinner the unetched substrate GaAs thickness is; conversely, the thicker it is. The back hole via is in the incomplete etching state, and the detected capacitance density data are 500 and 450; the back hole via size with capacitance density data of 450 is closer to the fully etched state; the back hole via is in the fully etched state, and the detected capacitance density data is 400. Therefore, users can use the following methods: Fig.21The distribution diagram of the capacitance density data shown can visually confirm the etching condition of the entire back side of the workpiece during the back hole gold backing operation, so as to make adjustments and improve the production efficiency and yield of semiconductor processing.
[0110] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.
[0111] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features.
[0112] The back hole through-hole monitoring method provided by an embodiment of the present application is introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, according to the idea of the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.
Claims
1. A back hole monitoring method, characterized in that: The following steps are involved: Obtaining a workpiece having wax coating and a wafer, and performing a back-hole back-metal operation on the back side of the workpiece to obtain a test workpiece with a back hole to be monitored; Performing capacitance density detection on the detection workpiece to obtain capacitance density data; Whether the detected workpiece is qualified is determined according to the capacitance density data.
2. The back hole monitoring method according to claim 1, characterized in that: Judging whether the inspection workpiece is qualified according to the capacitance density data includes: if the capacitance density data is equal to the capacitance density threshold, the back hole through hole processed by the inspection workpiece is qualified; if the capacitance density data is not equal to the capacitance density threshold, the back hole through hole processed by the inspection workpiece is unqualified.
3. The back hole monitoring method according to claim 2, characterized in that: The fact that the back hole processed in the inspection workpiece is unqualified includes that the back hole processed in the inspection workpiece is not completely etched into a through hole and the back hole processed in the inspection workpiece is not a through hole.
4. The back hole monitoring method according to claim 1, characterized in that: Performing a back-hole back-metalling operation on the back side of the workpiece to obtain a test workpiece with a back hole to be monitored includes: Applying a first photoresist on the back side of the workpiece and performing a patterning process to obtain a first processed workpiece; Acquiring thickness data of a substrate in the workpiece, and etching the substrate of the first processed workpiece by inductive plasma etching according to the thickness data to obtain a second processed workpiece; removing the first photoresist of the second processed workpiece to obtain a third processed workpiece having a back hole; Performing sputtering and electroplating treatment on the back side of the substrate and the back hole of the third processed workpiece to obtain a back-gold processed workpiece; The wax coating and the wafer of the back-metal-processed workpiece are removed to obtain a detection workpiece with a back hole to be monitored.
5. The back hole monitoring method according to claim 1, characterized in that: Acquiring a workpiece with wax coating and wafering includes: Obtaining a substrate, and manufacturing a first electrode based on the substrate to obtain a first component; Manufacturing a first dielectric layer based on the first component to obtain a second component; Manufacturing a second electrode based on the second component to obtain a third component; Manufacturing a third electrode based on the third component to obtain a fourth component; The fourth component is subjected to wax coating, chip mounting and grinding treatments in sequence to obtain a workpiece having wax coating and a chip.
6. The back hole monitoring method according to claim 5, characterized in that: The first electrode is manufactured based on the substrate to obtain the first component, including: coating a second photoresist on the front side of the substrate, sequentially performing patterning and metal evaporation on the second photoresist to obtain a first semi-finished product; and removing the second photoresist on the first semi-finished product to obtain the first component.
7. The back hole monitoring method according to claim 5, characterized in that: The first dielectric layer is manufactured based on the first component to obtain the second component, comprising: Depositing a first dielectric layer on the front surface of the first component to obtain a second semi-finished product; Sequentially coating a third photoresist on the front side of the second semi-finished product and performing pattern opening treatment to obtain a third semi-finished product; Performing an etching process on the first dielectric layer of the third semi-finished product to obtain a fourth semi-finished product; The third photoresist of the fourth semi-finished product is removed to obtain a second component.
8. The back hole monitoring method according to claim 7, characterized in that: The thickness of the first dielectric layer is And / or, the first dielectric layer is made of silicon nitride or silicon dioxide.
9. The back hole monitoring method according to claim 5, characterized in that: Producing a second electrode based on the second component to obtain a third component includes: coating a fourth photoresist on the front surface of the second component, and sequentially performing patterning and metal evaporation on the fourth photoresist to obtain a fifth semi-finished product; removing the fourth photoresist on the fifth semi-finished product to obtain the third component; and / or, The third electrode is manufactured based on the third component to obtain the fourth component, including: coating a fifth photoresist on the front side of the third component, sequentially performing patterning and metal evaporation treatment on the fifth photoresist to obtain a sixth semi-finished product; and removing the fifth photoresist on the sixth semi-finished product to obtain the fourth component.
10. The back hole monitoring method according to any one of claims 1 to 9, characterized in that: The substrate thickness of the workpiece is 50um, 100um, 120um, 150um or 200um.