Bonding structure, chip and preparation method of bonding structure

Abstract

The invention provides a bonding structure, a chip and a preparation method of the bonding structure. The bonding structure comprises a first stacking sheet, a second stacking sheet and a bonding layer, the bonding layer is deposited between the first stacking piece and the second stacking piece so as to bond the first stacking piece and the second stacking piece; and the bonding layer is made of an inorganic material and can absorb energy of laser to realize de-bonding. According to the bonding structure, the inorganic substance compatible with the microelectronic technology is adopted as the material of the bonding layer, and the inorganic substance is used for absorbing laser energy in the de-bonding process and converting the laser energy into heat energy to destroy the physicochemical properties or local vaporization of the original bonding layer, so that de-bonding of the bonding structure is realized. The technology implemented by the structure is completely compatible with the modern microelectronic technology, and meanwhile, the risk of fragments of the bonding structure in the de-bonding process is reduced, so that the de-bonding efficiency of the bonding structure is also improved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor chip manufacturing, and in particular to a bonding structure, a wafer, and a method for preparing the bonding structure. Background Art

[0002] Bonding structure is a new technical method that can effectively improve device performance. It can achieve precise stacking of silicon wafers thinned to tens of microns or even several microns. Since silicon wafers are fragile, it is necessary to adhere the thinned silicon wafers to a carrier with a certain rigidity. This adhesion process is called bonding. The bonded silicon wafers and the carrier complete a series of subsequent processes together. When the process is completed, the silicon wafer needs to be separated from the carrier. This process is called debonding.

[0003] Currently in the field of electronic packaging, since organic materials are used as bonding media, in the process of debonding, it is usually necessary to heat the entire bond to above 250°C and apply opposite forces to the upper and lower sheets to separate them. Alternatively, a metal object is inserted between the two sheets to separate the bonding surfaces using strong mechanical forces. Furthermore, the bonding material is dissolved by chemical agents to achieve peeling.

[0004] However, the debonding methods currently used for such bonded structures all have a high risk of fragmentation. In other words, the efficiency of debonding of such bonded structures is not high enough. More importantly, this technology cannot be used in chip manufacturing processes in the field of microelectronics because organic bonding materials are incompatible with semiconductor chip processes. Summary of the invention

[0005] The purpose of the present application is to provide a bonding structure, a chip and a method for preparing the bonding structure, which can improve the efficiency of the debonding process in the field of microelectronics.

[0006] In a first aspect, the present application provides a bonding structure, comprising a first stacked sheet, a second stacked sheet and a bonding layer; the bonding layer is deposited between the first stacked sheet and the second stacked sheet to bond the first stacked sheet and the second stacked sheet; the material of the bonding layer is an inorganic material, and is used to absorb the energy of the laser to achieve debonding.

[0007] The above bonding structure adopts an inorganic material as the material of the bonding layer, and is used to absorb the energy of the laser during the debonding process, so that the bonding layer is converted into heat energy to cause the material to expand or vaporize rapidly, thereby realizing the debonding of the bonding structure. The risk of fragmentation during the debonding process of the bonding structure is reduced, thereby improving the efficiency of the debonding of the bonding structure.

[0008] In combination with the first aspect, optionally, the inorganic material includes at least one of tungsten disilicide, titanium nitride, cobalt disilicide, titanium disilicide, nickel disilicide, tantalum disilicide and molybdenum disilicide.

[0009] The above-mentioned bonding structure adopts tungsten disilicide, titanium nitride, cobalt disilicide, titanium disilicide, nickel disilicide, tantalum disilicide and molybdenum disilicide as bonding materials. Since these materials have very high absorption coefficients, they can better absorb the energy in the laser, thereby further improving the efficiency of debonding the bonding structure.

[0010] In combination with the first aspect, optionally, the structure further includes a first thermal insulation layer and a second thermal insulation layer; the first thermal insulation layer is located between the first stacking sheet and the bonding layer; and the second thermal insulation layer is located between the second stacking sheet and the bonding layer.

[0011] The above bonding structure can effectively limit the heat of the bonding layer from diffusing to the first stacked sheet and the second stacked sheet during the debonding process by wrapping the first insulation layer and the second insulation layer on the upper and lower surfaces of the bonding layer, thereby protecting the first stacked sheet and the second stacked sheet. In other words, the risk of heat diffusion during the debonding process of the bonding structure is further reduced, and the efficiency of debonding the bonding structure is correspondingly improved.

[0012] In combination with the first aspect, optionally, the bonding layer includes a first sub-bonding layer and a second sub-bonding layer; the structure also includes a third thermal insulation layer; the first thermal insulation layer is located between the first stacking sheet and the first sub-bonding layer; the second thermal insulation layer is located between the second stacking sheet and the second sub-bonding layer; the third thermal insulation layer is located between the first sub-bonding layer and the second sub-bonding layer.

[0013] The above bonding structure, by adopting a structure of multiple bonding layers and a corresponding number of heat insulation layers, improves the stability of the bonding structure and more effectively limits the diffusion of heat to the first stacked sheet and the second stacked sheet, thereby further improving the efficiency of debonding the bonding structure.

[0014] In combination with the first aspect, optionally, the material of the first thermal insulation layer and / or the second thermal insulation layer includes at least one of silicon oxynitride, aluminum oxide and silicon dioxide.

[0015] The above-mentioned bonding structure, by using silicon oxynitride, aluminum oxide and silicon dioxide as the material of the thermal insulation layer, can more effectively ensure that heat does not diffuse to the first stacked sheet and the second stacked sheet in a short time, causing the first stacked sheet and the second stacked sheet to dissipate, thereby further improving the efficiency of debonding the bonding structure.

[0016] In combination with the first aspect, optionally, the first stacking sheet includes a supporting carrier, and the second stacking sheet includes a semiconductor substrate.

[0017] The above bonding structure improves the efficiency of debonding the bonding structure in the semiconductor chip by applying the bonding structures provided in the previous parts of the present application to the semiconductor chip manufacturing process.

[0018] In a second aspect, the present application provides a chip, comprising the bonding structure described in the first aspect.

[0019] The above chip has the same beneficial effects as the bonding structure described in the first aspect, which will not be described in detail here.

[0020] In a third aspect, the present application provides a method for preparing a bonding structure, comprising: depositing a first thermal insulation layer on a first stacked sheet using a first deposition process; depositing a first sub-bonding layer on the first thermal insulation layer using a second deposition process; depositing a second thermal insulation layer on the first sub-bonding layer using the first deposition process; depositing a second sub-bonding layer on the second thermal insulation layer using the second deposition process; depositing a third thermal insulation layer on the second sub-bonding layer using the first deposition process; and bonding the second stacked sheet to the third thermal insulation layer; wherein the material of the first sub-bonding layer and / or the second sub-bonding layer is an inorganic material.

[0021] The method for preparing the above bonding structure has the same beneficial effects as the bonding structure described in the first aspect, and will not be described in detail here.

[0022] In combination with the third aspect, optionally, the first deposition process includes chemical vapor deposition.

[0023] The preparation method of the bonding structure adopts chemical vapor deposition to form the heat insulation layer, so that the thickness distribution of the heat insulation layer is more uniform, and the purity and density of the heat insulation layer are improved, that is, the deposition effect of the heat insulation layer is improved.

[0024] In combination with the third aspect, optionally, the second deposition process includes physical vapor deposition.

[0025] The above-mentioned bonding structure preparation method forms the bonding layer by physical vapor deposition, thereby improving the adhesion of the bonding layer and making the temperature required in the deposition process lower, thereby better protecting the first stacked sheet, the second stacked sheet, the heat insulation layer and other bonding layers.

[0026] In summary, the bonding structure, chip and bonding structure preparation method provided by the present application, by using inorganic materials as the material of the bonding layer, reduce the risk of heat diffusion during the debonding process of the bonding structure, thereby improving the efficiency of debonding the bonding structure. By wrapping the first insulation layer and the second insulation layer on the upper and lower surfaces of the bonding layer, respectively, the heat of the bonding layer can be effectively limited to diffuse to the first stacked sheet and the second stacked sheet during the debonding process. Thereby playing a role in protecting the first stacked sheet and the second stacked sheet. By adopting a structure of a multi-layer bonding layer and a corresponding number of insulation layers, on the basis of improving the stability of the bonding structure, the diffusion of heat to the first stacked sheet and the second stacked sheet is more effectively limited. By forming the insulation layer by chemical vapor deposition, the thickness distribution of the insulation layer is more uniform, and the purity and density of the insulation layer are improved. By forming the bonding layer by physical vapor deposition, the adhesion of the bonding layer is improved. And the temperature required during the deposition process is lower, so that the first stacked sheet, the second stacked sheet, the insulation layer and other bonding layers are better protected. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0028] Figure 1 A schematic diagram of the first structure of the bonding structure provided in the embodiment of the present application;

[0029] Figure 2 The schematic diagram for debonding;

[0030] Figure 3 Optical parameter diagram of some materials provided in the embodiments of the present application;

[0031] Figure 4 A second structural schematic diagram of a bonding structure provided in an embodiment of the present application;

[0032] Figure 5 A third structural schematic diagram of a bonding structure provided in an embodiment of the present application;

[0033] Figure 6 A flow chart of a method for preparing a bonding structure provided in an embodiment of the present application.

[0034] Icons: 100, bonding structure; 110, first stacked sheet; 120, second stacked sheet; 130, bonding layer; 131, first sub-bonding layer; 132, second sub-bonding layer; 140, first thermal insulation layer; 150, second thermal insulation layer; 160, third thermal insulation layer. DETAILED DESCRIPTION

[0035] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. The components of the embodiments of the present application described and illustrated in the drawings here can be arranged and designed in various different configurations.

[0036] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0037] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0038] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the invented product is usually placed when in use. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0039] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0040] In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0041] Please refer to Figure 1 , Figure 1 1 is a schematic diagram of a first structure of a bonding structure 100 provided in an embodiment of the present application. The bonding structure 100 provided in an embodiment of the present application may include a first stacked sheet 110, a second stacked sheet 120, and a bonding layer 130. The bonding layer 130 may be deposited between the first stacked sheet 110 and the second stacked sheet 120 to bond the first stacked sheet 110 to the second stacked sheet 120. The material of the bonding layer 130 may include an inorganic material and is used to absorb the energy of the laser to achieve debonding.

[0042] The first stacked sheet 110 may be a support carrier in a chip, and the second stacked sheet 120 may be a substrate in a chip. The first stacked sheet 110 and the second stacked sheet 120 are bonded via a bonding layer 130 , and an inorganic material may be deposited on the first substrate by a deposition process, and then the second stacked sheet 120 is bonded to the bonding layer 130 .

[0043] Please refer to Figure 2 , Figure 2 This is the schematic diagram of debonding. The principle of laser debonding is to use the strong absorption effect of the bonding material on the laser. In one case, the bonding material absorbs high-density laser energy in a very short time and converts it into heat energy. The temperature of the bonding material rises rapidly, melts, and finally partially vaporizes. This process will cause the bonding material to expand rapidly and produce very high internal pressure. Under the action of pressure, the interface between the bonding material and the substrate and the supporting carrier breaks, and the bonding strength between the substrate and the supporting carrier is greatly reduced. In another case, the bonding material absorbs higher-density light energy in a very short time, causing the bonding material to be directly ionized and vaporized. This process also produces very high internal pressure, which greatly reduces the bonding strength between the bonding material and the substrate and the supporting carrier on both sides.

[0044] In the above implementation process, an inorganic material is used as the material of the bonding layer 130, and is used to absorb the energy of the laser during the debonding process, so that the bonding layer 130 is converted into heat energy or vaporized, thereby achieving debonding of the bonding structure 100. The risk of fragments during the debonding process of the bonding structure 100 is reduced, thereby improving the efficiency of debonding the bonding structure 100.

[0045] Referring to the figures, in some optional embodiments, the inorganic material may include at least one of tungsten disilicide, titanium nitride, cobalt disilicide, titanium disilicide, nickel disilicide, tantalum disilicide and molybdenum disilicide.

[0046] Please refer to Figure 3 , Figure 3 It is an optical parameter diagram of some materials provided in the embodiments of the present application. It can be seen from the figure that the optical parameters of the above-mentioned inorganic materials, and after comparison, it can be seen that the characteristics of titanium nitride are more prominent. Specifically, first of all, it has a very high absorption coefficient, around 6.0E5 / cm, and it is very stable in a relatively wide spectral range. This characteristic shows that the change in wavelength has a very limited effect on the absorption of energy, which will bring very good process stability. Secondly, the refractive index of titanium nitride is relatively low. According to the reflectivity calculation of the absorbing material, it can be found that the interface reflectivity changes relatively smoothly with the wavelength. These characteristics are conducive to the stability of the process results. In other words, as a preferred embodiment, titanium nitride can be used as a bonding material.

[0047] In the above implementation process, tungsten disilicide, titanium nitride, cobalt disilicide, titanium disilicide, nickel disilicide, tantalum disilicide and molybdenum disilicide are used as bonding materials. Since these materials have very high absorption coefficients, they can better absorb the energy in the laser, thereby further improving the efficiency of debonding the bonding structure 100.

[0048] Please refer to Figure 4 , Figure 4 1 is a schematic diagram of a second structure of the bonding structure 100 provided in an embodiment of the present application. In some optional embodiments, the structure may further include a first thermal insulation layer 140 and a second thermal insulation layer 150. The first thermal insulation layer 140 may be located between the first stacked sheet 110 and the bonding layer 130. The second thermal insulation layer 150 may be located between the second stacked sheet 120 and the bonding layer 130.

[0049] The reason why laser can achieve debonding is that it largely utilizes the absorption of laser energy by the bonding material. The light energy absorbed by the bonding material is quickly converted into heat energy, causing the material to expand or vaporize rapidly, or even directly ionize and vaporize. In order to prevent the first stacking sheet 110 and the second stacking sheet 120 from being damaged due to excessive heat diffusion, a material with low thermal conductivity can be used as a heat insulation layer to wrap the upper and lower surfaces of the bonding layer 130. That is, the first heat insulation layer 140 and the second heat insulation layer 150.

[0050] In the above implementation process, by wrapping the first heat insulation layer 140 and the second heat insulation layer 150 on the upper and lower surfaces of the bonding layer 130 respectively, the heat of the bonding layer 130 can be effectively limited from diffusing to the first stacked sheet 110 and the second stacked sheet 120 during the debonding process. This plays a role in protecting the first stacked sheet 110 and the second stacked sheet 120. In other words, the risk of heat diffusion during the debonding process of the bonding structure 100 is further reduced, and the efficiency of debonding the bonding structure 100 is correspondingly improved.

[0051] Please refer to Figure 5 , Figure 5 1 is a third structural schematic diagram of the bonding structure 100 provided in an embodiment of the present application. In some optional embodiments, the bonding layer 130 may include a first sub-bonding layer 131 and a second sub-bonding layer 132. The bonding structure 100 may also include a third thermal insulation layer 160. The first thermal insulation layer 140 may be located between the first stacked sheet 110 and the first sub-bonding layer 131. The second thermal insulation layer 150 may be located between the second stacked sheet 120 and the second sub-bonding layer 132. The third thermal insulation layer 160 may be located between the first sub-bonding layer 131 and the second sub-bonding layer 132.

[0052] It should be understood that those skilled in the art can set more bonding layers 130 between the first stacked sheet 110 and the second stacked sheet 120 according to actual application requirements, that is, the third sub-bonding layer 130, the fourth sub-bonding layer 130, the fifth sub-bonding layer 130, etc. Correspondingly, more thermal insulation layers can be set to wrap these bonding layers 130, that is, the fourth thermal insulation layer, the fifth thermal insulation layer, etc. These implementations should all be within the scope of protection of the present application, so the present application embodiment does not specifically limit this.

[0053] In the above implementation process, by adopting the structure of multiple bonding layers 130 and a corresponding number of heat insulation layers, the stability of the bonding structure 100 is improved, and the diffusion of heat to the first stacked sheet 110 and the second stacked sheet 120 is more effectively limited, thereby further improving the efficiency of debonding the bonding structure 100.

[0054] In some optional embodiments, the material of the first thermal insulation layer 140 and / or the second thermal insulation layer 150 may include at least one of silicon oxynitride, aluminum oxide, and silicon dioxide.

[0055] Please refer to Table 1, from which we can see that silicon dioxide has a very low thermal conductivity. Therefore, wrapping the debonding material with a certain thickness of silicon dioxide can effectively ensure that the heat will not diffuse into the silicon material with high thermal conductivity and dissipate in a short time, thereby affecting the debonding effect.

[0056] Table 1

[0057]

[0058] In the above implementation process, by using silicon oxynitride, aluminum oxide and silicon dioxide as the material of the thermal insulation layer, it can be more effectively ensured that heat does not diffuse to the first stacked sheet 110 and the second stacked sheet 120 in a short time, causing the first stacked sheet 110 and the second stacked sheet 120 to dissipate, thereby further improving the efficiency of debonding the bonding structure 100.

[0059] In some optional embodiments, the first stacked sheet 110 may include a support carrier, and the second stacked sheet 120 may include a semiconductor substrate.

[0060] That is to say, the bonding structure 100 provided in the previous embodiments of the present application can be applied to the field of semiconductor chip manufacturing.

[0061] In the above implementation process, by applying the bonding structure 100 provided in the previous embodiments of the present application to the semiconductor chip manufacturing process, the efficiency of debonding the bonding structure 100 in the semiconductor chip is improved.

[0062] Based on the same concept, an embodiment of the present application provides a chip that may include the bonding structure 100 described above.

[0063] The above implementation process may be the same as the bonding structure 100 described above, and will not be described again here.

[0064] Please refer to Figure 6 , Figure 6 : is a flow chart of a method for preparing a bonding structure provided in an embodiment of the present application. Based on the same concept, an embodiment of the present application provides a chip, a method for preparing a bonding structure, which may include:

[0065] Step S110: depositing a first thermal insulation layer on the first stacked sheet using a first deposition process.

[0066] Step S120: depositing a first sub-bonding layer on the first thermal insulation layer by using a second deposition process.

[0067] Step S130: depositing a second thermal insulation layer on the first sub-bonding layer using a first deposition process.

[0068] Step S140: depositing a second sub-bonding layer on the second thermal insulation layer using a second deposition process.

[0069] Step S150: depositing a third thermal insulation layer on the second sub-bonding layer using the first deposition process.

[0070] Step S160: bonding the second stacked sheet onto the third thermal insulation layer.

[0071] The first deposition process and the second deposition process in the above steps may be the same process or different processes, which may specifically be chemical vapor deposition, physical vapor deposition, atomic layer deposition, sputtering deposition, evaporation or electrochemical deposition.

[0072] Wherein, the material of the first sub-bonding layer and / or the second sub-bonding layer is an inorganic material.

[0073] The above implementation process may be the same as the bonding structure described above, and will not be repeated here.

[0074] In some optional embodiments, the first deposition process may include chemical vapor deposition.

[0075] In the above implementation process, the heat insulation layer is deposited by using a chemical vapor deposition process, so that the thickness distribution of the heat insulation layer is more uniform, and the purity and density of the heat insulation layer are improved, that is, the effect of the deposition of the heat insulation layer is improved.

[0076] In some optional embodiments, the second deposition process may include physical vapor deposition.

[0077] In the above implementation process, the bonding layer is deposited by using a physical vapor deposition process, which improves the adhesion of the bonding layer and makes the temperature required in the deposition process lower, thereby better protecting the first stacked sheet, the second stacked sheet, the heat insulation layer and other bonding layers.

[0078] In summary, the bonding structure 100, the chip and the preparation method of the bonding structure 100 provided by the present application, by using inorganic materials as the material of the bonding layer 130, reduce the risk of fragments in the process of debonding the bonding structure 100, thereby improving the efficiency of debonding the bonding structure 100. By wrapping the first thermal insulation layer 140 and the second thermal insulation layer 150 on the upper and lower surfaces of the bonding layer 130 respectively, the heat of the bonding layer 130 can be effectively limited to diffuse to the first stacked sheet 110 and the second stacked sheet 120 during the debonding process. Thereby, the first stacked sheet 110 and the second stacked sheet 120 are protected. By adopting a structure of a multi-layer bonding layer 130 and a corresponding number of thermal insulation layers, the stability of the bonding structure 100 is improved, and the diffusion of heat to the first stacked sheet 110 and the second stacked sheet 120 is more effectively limited. By forming the thermal insulation layer by chemical vapor deposition, the thickness distribution of the thermal insulation layer is more uniform, and the purity and density of the thermal insulation layer are improved. By using the physical vapor deposition process to deposit the bonding layer 130 , the adhesion of the bonding layer 130 is improved, and the temperature required during the deposition process is lowered, thereby better protecting the first stacked sheet 110 , the second stacked sheet 120 , the heat insulation layer and other bonding layers 130 .

[0079] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A bonding structure, characterized in that: It includes a first stacking sheet, a second stacking sheet and a bonding layer; The bonding layer is deposited between the first stacked sheet and the second stacked sheet to bond the first stacked sheet and the second stacked sheet; The bonding layer comprises an inorganic material and is used to absorb the energy of the laser to achieve subsequent debonding.

2. The bonding structure according to claim 1, characterized in that: in, The inorganic material includes at least one of tungsten disilicide, titanium nitride, cobalt disilicide, titanium disilicide, nickel disilicide, tantalum disilicide and molybdenum disilicide.

3. The bonding structure according to claim 1, characterized in that: The structure also includes a first thermal insulation layer and a second thermal insulation layer; The first heat insulation layer is located between the first stacking sheet and the bonding layer; The second heat insulation layer is located between the second stacking sheet and the bonding layer.

4. The bonding structure according to claim 3, wherein the bonding layer comprises a first sub-bonding layer and a second sub-bonding layer; The structure also includes a third insulation layer; The first heat insulation layer is located between the first stacking sheet and the first sub-bonding layer; The second heat insulation layer is located between the second stacking sheet and the second sub-bonding layer; The third heat insulation layer is located between the first sub-bonding layer and the second sub-bonding layer.

5. The bonding structure according to claim 3, characterized in that: in, The material of the first thermal insulation layer and / or the second thermal insulation layer includes at least one of silicon oxynitride, aluminum oxide and silicon dioxide.

6. The bonding structure according to any one of claims 1 to 5, characterized in that: in, The first stack includes a support carrier, and the second stack includes a semiconductor substrate.

7. A chip, characterized in that: Comprising the bonding structure as claimed in any one of claims 1 to 6.

8. A method for preparing a bonding structure, characterized in that: include: Depositing a first thermal insulation layer on the first stacked sheet using a first deposition process; Depositing a first sub-bonding layer on the first thermal insulation layer by a second deposition process; Depositing a second thermal insulation layer on the first sub-bonding layer using a first deposition process; Depositing a second sub-bonding layer on the second thermal insulation layer by a second deposition process; Depositing a third heat-insulating layer on the second sub-bonding layer by using a first deposition process; as well as bonding a second stacked sheet onto the third thermal insulation layer; Wherein, the material of the first sub-bonding layer and / or the second sub-bonding layer is an inorganic material.

9. The method according to claim 8, characterized in that in, The first deposition process includes chemical vapor deposition.

10. The method according to claim 8, characterized in that in, The second deposition process includes physical vapor deposition.

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