Crystalline silicon solar cell, preparation method thereof and solar cell

Abstract

The invention provides a preparation method of a crystalline silicon solar cell. The preparation method comprises the following steps: annealing a cut solar cell; a passivation solution is coated on the cutting edge of the solar cell, the passivation solution comprises at least one passivator with a passivation functional group, the passivation functional group interacts with the cutting edge, and a passivation film is formed on the cutting edge. The invention further provides the crystalline silicon solar cell piece prepared according to the preparation method and a solar cell comprising the crystalline silicon solar cell piece. According to the invention, the passivation solution is coated after annealing, so that the passivation layer is more stable, the passivation effect is improved, the process is simplified, and the cost is saved.

Description

Technical Field

[0001] The present disclosure relates to the technical field of solar cells, and in particular to a crystalline silicon solar cell sheet and a preparation method thereof, and a solar cell made from the crystalline silicon solar cell sheet. Background Art

[0002] With the application of half-cell and shingled technologies in solar cells, solar cells are cut into 1 / 2, 1 / 5 or 1 / 6 pieces to reduce the internal current and line resistance of the cell. The commonly used laser scribing technology uses laser to quickly heat the cell locally, and then generates an uneven temperature field through cooling, thereby inducing thermal stress. When the thermal stress generated by the laser reaches the fracture strength of the silicon wafer, it will cause it to break, and the fracture will unfold steadily along the moving trajectory of the laser, thereby achieving cell cutting.

[0003] The cut edges of cut solar cells will have microscopic damages such as physical cracks and lattice defects. These microscopic damages provide recombination centers for charge carriers, that is, electrons and holes meet and cancel each other at these points, reducing the number of surface excited carriers and causing power loss. As the perimeter-to-area ratio of small-sized cells increases, edge recombination will become more obvious. Summary of the invention

[0004] The present disclosure provides a method for preparing a crystalline silicon solar cell, which comprises:

[0005] Annealing the cut solar cell sheets;

[0006] A passivation solution is coated on the cut edge of the solar cell sheet, wherein the passivation solution comprises at least one passivating agent with a passivation functional group, and the passivation functional group interacts with the cut edge to form a passivation film on the cut edge.

[0007] In some embodiments, the passivating functional group is selected from one or more of a hydrogen-containing functional group, a phosphonic acid functional group, and a sulfonic acid functional group.

[0008] In some embodiments, the hydrogen-containing functional group is selected from one or more of a hydroxyl group, a thiol group, and a carboxylic acid group.

[0009] In some embodiments, the passivating agent with a hydrogen-containing functional group is selected from one or more of quinone hydroquinone, polyvinyl alcohol, and 3-mercaptopropionic acid; and / or

[0010] The passivating agent with a phosphonic acid functional group is selected from (2-(9H-carbazol-9-yl)ethyl)phosphonic acid; and / or

[0011] The passivating agent with sulfonic acid functional group is selected from one or more of dodecylbenzenesulfonic acid and 2-acrylamide-2-methyl-1-propanesulfonic acid.

[0012] In some embodiments, before the step of coating the passivation solution on the cut edge of the solar cell, the preparation method further comprises:

[0013] At least the passivating agent is added into an organic solvent for mixed dissolution, wherein the organic solvent is selected from one or more of isopropanol, ethylene glycol, ethanol and deionized water;

[0014] The passivation solution is prepared by magnetic stirring.

[0015] In some embodiments, at least the passivating agent is added to an organic solvent for mixed dissolution, comprising:

[0016] The passivator, the auxiliary agent and the organic solvent are mixed and dissolved, wherein the auxiliary agent is selected from one or more of propylene glycol methyl ether acetate, sulfuric acid and graphene.

[0017] In some embodiments, after the step of coating the passivation solution on the cut edge of the solar cell, the preparation method further comprises:

[0018] In a preset temperature and humidity environment, the solar cell is placed vertically for a preset time, wherein the cut edge faces downward.

[0019] In some embodiments, in the step of annealing the cut solar cell sheets, the annealing temperature is 80-190° C. and the annealing time is 5-30 min.

[0020] The disclosed embodiment also provides a crystalline silicon solar cell obtained according to the above-mentioned method for preparing the crystalline silicon solar cell.

[0021] The present disclosure also provides a solar cell, which includes a crystalline silicon solar cell obtained according to the above-mentioned method for preparing the crystalline silicon solar cell.

[0022] The method for preparing the crystalline silicon solar cell disclosed in the present invention can directly apply the passivation liquid on the cut edge of the crystalline silicon solar cell, is easy to operate, greatly simplifies the passivation process, and improves the passivation effect through annealing. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 The present invention is a flowchart of a method for passivating cut edges of a crystalline silicon solar cell according to the present invention.

[0024] Figure 2 The invention relates to a stationary device used in the passivation method of the cut edge of a crystalline silicon solar cell sheet disclosed in the present invention.

[0025] Figure 3 It is a PL edge to middle trend diagram of the half-cell before and after passivation according to the passivation method disclosed in the present invention.

[0026] Figure 4 It is the PL brightness value of the half cell before and after passivation according to the passivation method disclosed in the present invention. DETAILED DESCRIPTION

[0027] In order to enable those skilled in the art to better understand the technical solution of the present disclosure, the technical solution of the present disclosure is described in detail below with reference to the accompanying drawings.

[0028] Example embodiments will be described more fully below with reference to the accompanying drawings, but the example embodiments may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. On the contrary, the purpose of providing these embodiments is to make the present disclosure thorough and complete and to enable those skilled in the art to fully understand the scope of the present disclosure.

[0029] In the absence of conflict, the various embodiments of the present disclosure and the various features therein may be combined with each other.

[0030] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0031] The terms used herein are only used to describe specific embodiments and are not intended to limit the present disclosure. As used herein, the singular forms "a", "an" and "the" are also intended to include the plural forms, unless the context clearly indicates otherwise. It will also be understood that when the terms "comprising" and / or "made of" are used in this specification, the presence of the features, wholes, steps, operations, elements and / or components is specified, but the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or groups thereof is not excluded.

[0032] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art. It will also be understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted as having an idealized or overly formal meaning unless explicitly defined as such herein.

[0033] In a first aspect, an embodiment of the present disclosure provides a method for preparing a crystalline silicon solar cell, which comprises:

[0034] S1, annealing the cut solar cell sheets;

[0035] S2. Coating a passivation solution on the cut edge of the solar cell, wherein the passivation solution includes at least one passivating agent with a passivation functional group, and the passivation functional group interacts with the cut edge to form a passivation film on the cut edge.

[0036] The embodiment of the present disclosure provides a passivation solution, which is prepared from at least one passivation agent with a passivation functional group, wherein the passivation functional group is a functional group that can interact with the cut edge of a solar cell and play a passivation role. Through the interaction between the passivation functional group and the cut edge, by directly coating the passivation solution on the cut edge of the solar cell, a passivation film can be formed on the cut edge, thereby passivating the cut edge.

[0037] In the disclosed embodiment, the solar cell is first annealed and then coated with a passivation liquid. The hydrophilicity and hydrophobicity of the cut portion of the silicon wafer are adjusted by annealing, and the lattice defects of the cut portion of the silicon wafer can be modified at the same time, thereby improving the stability of the passivation film and enhancing the passivation effect on the silicon wafer.

[0038] Compared with the atomic layer deposition (ALD) deposition of AlO x The passivation material requires precise control of the passivation conditions. In the preparation method of the crystalline silicon solar cell provided in the embodiment of the present disclosure, the requirements for the passivation conditions when passivating the cut edges are lower, the process is simpler, and at the same time, a better passivation effect is ensured, which is beneficial to reducing the manufacturing cost of the solar cell.

[0039] The embodiments of the present disclosure do not specifically limit the passivation functional group, and it can be any functional group that can play a passivation role. The passivation functional group can interact with the cut edge by chemical reaction with the cut edge surface, surface adsorption, etc. For example, the passivation functional group forms a coordination bond or a hydrogen bond with the dangling bond of the cut portion of the silicon wafer, thereby saturating the dangling bond to weaken the composite effect.

[0040] In some embodiments, the passivating functional group is selected from one or more of a hydrogen-containing functional group, a phosphonic acid functional group, and a sulfonic acid functional group.

[0041] In some embodiments, the hydrogen-containing functional group is selected from one or more of a hydroxyl group, a thiol group, and a carboxylic acid group.

[0042] In the embodiments of the present disclosure, the passivating agent with hydrogen-containing functional groups is rich in hydrogen (H), hydroxyl, thiol, carboxylic acid groups, etc., and these hydrogen-containing functional groups can be used to passivate the bare silicon at the cut edge; the passivating agent with phosphonic acid functional groups, whose phosphonic acid functional groups can passivate the bare silicon position at the cut edge, thereby reducing the recombination of carriers; the passivating agent with sulfonic acid functional groups, whose sulfonic acid functional groups can combine with the silicon dangling bonds at the cut edge, and adsorb on the silicon surface to form a passivation film.

[0043] The embodiments of the present disclosure do not impose any special limitation on the passivating agent having a hydrogen-containing functional group.

[0044] In some embodiments, the passivating agent with a hydrogen-containing functional group is selected from one or more of quinone hydroquinone, polyvinyl alcohol, and 3-mercaptopropionic acid.

[0045] In the disclosed embodiment, quinone hydroquinone contains more hydrogen-containing functional groups such as H and hydroxyl groups, and these hydrogen-containing functional groups can be used to passivate the bare silicon at the cut edge. Polyvinyl alcohol mainly forms a passivation film on the cut edge of the battery cell, which passivates the bare silicon at the cut edge through hydrogen-containing functional groups such as hydroxyl groups. 3-Mercaptopropionic acid passivates the bare silicon at the cut edge through hydrogen-containing functional groups such as mercapto and carboxylic acid groups.

[0046] The embodiments of the present disclosure do not impose any special limitation on the passivating agent having a phosphonic acid functional group.

[0047] In some embodiments, the passivating agent with a phosphonic acid functional group is selected from (2-(9H-carbazol-9-yl)ethyl)phosphonic acid.

[0048] (2-(9H-carbazol-9-yl)ethyl)phosphonic acid, referred to as 2PACZ, in the disclosed embodiments, 2PACZ can spontaneously associate through covalent or non-covalent interactions to form a stable, perfectly structured two-dimensional or three-dimensional supramolecular process, thereby passivating the side defects of crystalline silicon caused by cutting. At the same time, the phosphonic acid functional groups contained in 2PACZ can also combine with the dangling bonds on the side of the crystalline silicon after laser cutting, thereby adsorbing on the silicon surface and forming an ordered molecular film, thereby effectively passivating the bare silicon position at the edge of the cell.

[0049] The embodiments of the present disclosure do not impose any special limitation on the passivating agent having a sulfonic acid functional group.

[0050] In some embodiments, the passivating agent with a sulfonic acid functional group is selected from one or more of dodecylbenzenesulfonic acid and 2-acrylamido-2-methyl-1-propanesulfonic acid.

[0051] In the disclosed embodiments, the sulfonic acid functional groups of dodecylbenzenesulfonic acid and 2-acrylamido-2-methyl-1-propanesulfonic acid combine with the silicon dangling bonds of the cut edges of the crystalline silicon solar cell after laser cutting, thereby being adsorbed on the silicon surface and forming an ordered molecular film to achieve passivation.

[0052] In the embodiment of the present disclosure, the passivation solution may include one or more of a passivation agent with a hydrogen-containing functional group, a passivation agent with a phosphonic acid functional group, and a passivation agent with a sulfonic acid functional group. The embodiment of the present disclosure does not specifically limit this.

[0053] In the embodiments of the present disclosure, any one of the passivating agents may include one or more of a hydrogen-containing functional group, a phosphonic acid functional group, and a sulfonic acid functional group, which is not particularly limited in the embodiments of the present disclosure.

[0054] In the embodiment of the present disclosure, the passivation solution may include one or more of quinone hydroquinone, polyvinyl alcohol, 3-mercaptopropionic acid, (2-(9H-carbazole-9-yl)ethyl)phosphonic acid, dodecylbenzenesulfonic acid, and 2-acrylamido-2-methyl-1-propanesulfonic acid. The embodiment of the present disclosure does not specifically limit this.

[0055] In some embodiments, before the step of coating the passivation solution on the cut edges of the solar cell, the preparation method further comprises: a step of preparing the passivation solution.

[0056] In some embodiments, the step of preparing the passivation solution comprises:

[0057] At least the passivating agent is added into an organic solvent for mixed dissolution, wherein the organic solvent is selected from one or more of isopropanol, ethylene glycol, ethanol and deionized water;

[0058] The passivation solution is prepared by magnetic stirring.

[0059] The solvent has the advantages of strong solubility and high stability, and is conducive to uniform distribution of the passivation liquid on the cut part of the silicon wafer.

[0060] The embodiments of the present disclosure do not specifically limit the environment for preparing the passivation solution. For example, in an environment of room temperature (such as 25° C.) and humidity of 20%-30%, the passivation agent and the organic solvent are fully mixed and dissolved to obtain the passivation solution.

[0061] In some embodiments, at least the passivating agent is added to an organic solvent for mixed dissolution, comprising:

[0062] A passivating agent, an auxiliary agent, and an organic solvent are mixed and dissolved, wherein the auxiliary agent is selected from one or more of propylene glycol methyl ether acetate, sulfuric acid, and graphene. The auxiliary agent changes the properties of the passivating solution, reduces the interfacial tension between the passivating solution and the cut part of the silicon wafer, and improves the adhesion of the passivating solution.

[0063] In the embodiments of the present disclosure, when preparing the passivation solution, adding an auxiliary agent is beneficial to improving the passivation effect. For example, propylene glycol methyl ether acetate is a viscosity agent and stabilizer with multiple functional groups. Adding propylene glycol methyl ether acetate to the quinone hydroquinone system can advantageously form a passivation film on the cut edge of the battery cell.

[0064] In some embodiments, after the step of coating the passivation solution on the cut edge of the solar cell, the preparation method further comprises:

[0065] In a preset temperature and humidity environment, the solar cell is placed vertically for a preset time, wherein the cut edge faces downward.

[0066] In the disclosed embodiment, after the passivation liquid is applied, the cut edge of the solar cell is placed vertically, which is conducive to the passivation liquid being evenly attached to the cut edge, thereby improving the passivation effect and simplifying the process.

[0067] The embodiments of the present disclosure do not specifically limit the preset temperature and humidity environment. For example, after applying the passivation solution, the cut side of the solar cell is placed vertically for 10 to 20 minutes in an environment of room temperature (eg, 25° C.) and 20%-30% humidity.

[0068] For example, the coated cell can be placed in Figure 2 The device shown is placed in a static state with the cut edge of the cell facing downwards to prevent the passivation liquid from overflowing and sticking. Severe overflowing will cause black edges to form on the cut edge of the cell, which is not conducive to the passivation effect. In addition, by allowing the device to stand still, the passivation liquid is dried while preventing overflowing.

[0069] The embodiments of the present disclosure do not specifically limit the conditions for annealing the cut solar cell sheets.

[0070] In some embodiments, in the step of annealing the cut solar cell sheets, the annealing temperature is 80-190° C. and the annealing time is 5-30 min.

[0071] In some embodiments, the annealing temperature is 130-150° C., and the annealing time is 15-25 min. For example, the annealing temperature may be 80° C., 90° C., 100° C., 110° C., 120° C., 130° C., 140° C., 150° C., 160° C., 170° C., 180° C., or 190° C.; and the annealing time may be 5 min., 10 min., 15 min., 20 min., 25 min., or 30 min.

[0072] In some embodiments, in the step of coating the passivation liquid on the cut edge of the solar cell, the passivation liquid is coated on the cut edge of the solar cell by any one of wiping, spraying or dipping.

[0073] In the embodiment of the present disclosure, a passivation film can be formed on the cutting edge by applying the passivation liquid by wiping, spraying or dipping, thereby simplifying the process and achieving a better passivation effect.

[0074] In some embodiments, in the step of coating the passivation solution on the cut edges of the solar cell, the coating is performed in a single-piece coating manner.

[0075] Single-chip coating means that each cell is coated with the passivation solution separately. Single-chip coating is convenient for more even coating of the passivation solution, and the cells can be separated independently after passivation. In contrast, cells after stacking coating tend to stick together and need to be separated one by one; and the passivation effect of each cell is not as good as that of single-chip coating.

[0076] The present disclosure also provides a solar cell obtained by the above-mentioned method for preparing the crystalline silicon solar cell.

[0077] The present disclosure also provides a solar cell, which includes a solar cell obtained by the above-mentioned method for preparing a crystalline silicon solar cell.

[0078] In order to enable those skilled in the art to more clearly understand the technical solutions provided by the embodiments of the present disclosure, the technical solutions provided by the embodiments of the present disclosure are described in detail below through specific examples.

[0079] The cell sheets in the following embodiments and comparative examples were subjected to photoluminescence (PL) brightness tests before and after passivation. The conditions for the PL brightness test were 0.1 suns and 1 suns, 0.2s. The 7mm range of the passivation edge was selected to read the PL brightness test results.

[0080] Example 1

[0081] The cell was placed in an oven and annealed at 145°C for 10 minutes. 5 ml of quinone hydroquinone was dissolved in 5 ml of ethylene glycol solution, and then mixed with 5 ml of propylene glycol methyl ether acetate, and mixed by magnetic stirring to obtain a passivation solution. The cut edge of the cell was immersed in the passivation solution for 30 seconds, and then the cell was left to stand for 10 minutes under ambient temperature and humidity conditions. The PL brightness value characterization results show that its gain effect can reach 12.69%.

[0082] Example 2

[0083] The cell was placed in an oven and annealed at 80°C for 20 minutes. 5 ml of (2-(9H-carbazole-9-yl)ethyl)phosphonic acid was dissolved in 5 ml of ethylene glycol and stirred magnetically to form a uniform solution, which was used as the passivation solution. The passivation solution was applied to the cut edge of the cell, and then the cell was left to stand at ambient temperature and humidity for 15 minutes. The PL brightness value characterization results showed that the gain effect could reach 14.05%.

[0084] Example 3

[0085] The cell was placed in an oven and annealed at 145°C for 10 minutes. 5 ml of 2-acrylamide-2-methyl-1-propane sulfonic acid was dissolved in 5 ml of ethylene glycol solution, and a uniform solution was formed after magnetic stirring, which was used as the passivation solution. The passivation solution was applied to the cut edge of the cell, and then the cell was left to stand for 20 minutes under ambient temperature and humidity conditions. The PL brightness value characterization results showed that the gain effect can reach 17.73%.

[0086] Example 4

[0087] The cell was placed in an oven and annealed at 145°C for 10 minutes. 5 ml of polyvinyl alcohol was dissolved in 5 ml of deionized water and stirred magnetically to form a uniform solution, which was used as the passivation solution. The passivation solution was applied to the cut edge of the cell, and then the cell was left to stand at ambient temperature and humidity for 20 minutes. The PL brightness value characterization results showed that the gain effect could reach 9.26%.

[0088] Example 5

[0089] The cell was placed in an oven and annealed at 145°C for 15 minutes. 5 ml of dodecylbenzenesulfonic acid, 5 ml of deionized water, 0.5 ml of H2SO4 and 4 ml of graphene were mixed and stirred magnetically to obtain a mixed solution used as a passivation solution. The passivation solution was applied to the cut edge of the cell, and then the cell was left to stand for 25 minutes under ambient temperature and humidity conditions. The PL brightness value characterization results showed that the gain effect can reach 15.52%.

[0090] Example 6

[0091] The cell was placed in an oven and annealed at 190°C for 10 minutes. 1 ml of dodecylbenzenesulfonic acid was dissolved in 10 ml of deionized water and stirred magnetically to form a uniform solution, which was used as the passivation solution. The passivation solution was applied to the cut edge of the cell, and then the cell was left to stand at ambient temperature and humidity for 15 minutes. The PL brightness value characterization results showed that the gain effect could reach 10.36%.

[0092] Example 7

[0093] The cell was placed in an oven and annealed at 145°C for 10 minutes. 5 ml of quinone hydroquinone was dissolved in 5 ml of ethylene glycol solution, and then mixed with 5 ml of propylene glycol methyl ether acetate. After magnetic stirring, the passivation solution was obtained. The cut edge of the cell was immersed in the passivation solution for 10 seconds, and then the cell was left to stand for 20 minutes under ambient temperature and humidity conditions. The PL brightness value characterization results show that the gain effect can reach 11.38%.

[0094] Example 8

[0095] The cell was placed in an oven and annealed at 80°C for 10 minutes. 5 ml of quinone hydroquinone was dissolved in 5 ml of ethylene glycol and stirred magnetically to form a uniform solution, which was used as the passivation solution. The passivation solution was applied to the cut edge of the cell, and then the cell was left to stand at ambient temperature and humidity for 25 minutes. The PL brightness value characterization results showed that the gain effect could reach 14.46%.

[0096] Example 9

[0097] The cell was placed in an oven and annealed at 145°C for 10 minutes. 5 ml of dodecyl sulfonic acid was dissolved in 5 ml of ethylene glycol solution and stirred magnetically to form a uniform solution, which was used as the passivation solution. The passivation solution was applied to the cut edge of the cell, and then the cell was left to stand at ambient temperature and humidity for 20 minutes. The PL brightness value characterization results showed that the gain effect could reach 13.51%.

[0098] Example 10

[0099] The cell was placed in an oven and annealed at 145°C for 10 minutes. 5 ml of polyvinyl alcohol was dissolved in 5 ml of ethylene glycol and stirred magnetically to form a uniform solution, which was used as the passivation solution. The passivation solution was applied to the cut edge of the cell, and then the cell was left to stand for 15 minutes under ambient temperature and humidity conditions. The PL brightness value characterization results showed that the gain effect could reach 9.98%.

[0100] Embodiment 11

[0101] The cell was placed in an oven and annealed at 145°C for 10 minutes. 5 ml of polyvinyl alcohol and 5 ml of quinone hydroquinone were magnetically stirred to form a uniform solution, which was used as the passivation solution. The passivation solution was applied to the cut edge of the cell, and then the cell was left to stand for 25 minutes under ambient temperature and humidity conditions. The PL brightness value characterization results showed that the gain effect could reach 11.29%.

[0102] Example 12

[0103] The cell was placed in an oven and annealed at 145°C for 15 minutes. 5 ml of dodecylbenzenesulfonic acid, 5 ml of deionized water and 0.5 ml of H2SO4 were mixed and stirred magnetically to obtain a mixed solution used as a passivation solution. The passivation solution was applied to the cut edge of the cell, and then the cell was left to stand for 20 minutes under ambient temperature and humidity conditions. The PL brightness value characterization results showed that the gain effect could reach 13.80%.

[0104] Embodiment 13

[0105] The cell was placed in an oven and annealed at 190°C for 10 minutes. 5 ml of dodecylbenzenesulfonic acid was dissolved in 25 ml of deionized water and stirred magnetically to form a uniform solution, which was used as the passivation solution. The passivation solution was applied to the cut edge of the cell, and then the cell was left to stand for 15 minutes under ambient temperature and humidity conditions. The PL brightness value characterization results showed that the gain effect could reach 12.60%.

[0106] Comparative Example 1

[0107] Dissolve 5 ml of 2-acrylamide-2-methyl-1-propane sulfonic acid in 5 ml of ethylene glycol solution, and stir magnetically to form a uniform solution, which is used as the passivation solution. Apply the passivation solution on the cut edge of the cell. The PL brightness value characterization results show that its gain effect is 14.87%.

[0108] Comparative Example 2

[0109] Dissolve 5 ml of (2-(9H-carbazole-9-yl)ethyl)phosphonic acid in 5 ml of ethylene glycol, and stir magnetically to form a uniform solution, which is used as the passivation solution. Apply the passivation solution to the cut edge of the cell. The PL brightness value characterization results show that its gain effect is 12.31%.

[0110] The specific values ​​of the passivation gain in each embodiment are shown in Table 1 below.

[0111] Table 1 Gain values ​​of PL brightness before and after passivation in each embodiment

[0112] Before passivation After passivation Brightness Difference Passivation Gain Example 1 1560.7 1758.7 198 12.69 Example 2 1555.5 1774 218.5 14.05 Example 3 1575.6 1855 279.4 17.73 Example 4 1601.6 1749.9 148.3 9.26 Example 5 1568.3 1811.7 243.4 15.52 Example 6 1554.5 1715.6 161.1 10.36 Example 7 1535.1 1709.8 174.7 11.38 Example 8 1544.8 1768.2 223.4 14.46 Example 9 1522.9 1728.6 205.7 13.51 Example 10 1597.6 1757.1 159.5 9.98 Embodiment 11 1615.5 1797.9 182.4 11.29 Example 12 1611.4 1833.7 222.3 13.80 Embodiment 13 1567.3 1764.8 197.5 12.60 Comparative Example 1 1553.2 1784.2 231 14.87 Comparative Example 2 1523.1 1710.6 187.5 12.31

[0113] like Figure 3 and Figure 4 As shown in the figure, the area from the edge of the cell to the middle is a fixed square area between the two main grids, and then the log normalized trend graph of the statistical curve is obtained. From the trend graph, it can be seen that the PL brightness value at the edge of the cell after passivation is higher than that of the unpassivated sample.

[0114] Compared with Example 1, and compared with Example 2 and Comparative Example 2, the difference in the passivation method between Example 3 and Comparative Example 2 is only whether annealing treatment is performed. It can be seen from the data in Table 1 that the passivation gains of Examples 3 and 2 are correspondingly improved.

[0115] It can be seen that the passivation method for the cut edge of the crystalline silicon solar cell disclosed in the present invention is not only simple to operate and greatly simplifies the passivation process, but also further improves the passivation effect by annealing the cell.

[0116] Example embodiments have been disclosed herein, and although specific terms are employed, they are used and should be interpreted only in a general illustrative sense and not for limiting purposes. In some embodiments, it will be apparent to those skilled in the art that, unless otherwise expressly noted, features, characteristics, and / or elements described in conjunction with a particular embodiment may be used alone or in combination with features, characteristics, and / or elements described in conjunction with other embodiments. Therefore, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the scope of the present disclosure as set forth in the appended claims.

Claims

1. A method for preparing a crystalline silicon solar cell, comprising: Annealing the cut solar cell sheets; A passivation solution is coated on the cut edge of the solar cell sheet, wherein the passivation solution comprises at least one passivating agent with a passivation functional group, and the passivation functional group interacts with the cut edge to form a passivation film on the cut edge.

2. The preparation method according to claim 1, wherein The passivation functional group is selected from one or more of a hydrogen-containing functional group, a phosphonic acid functional group, and a sulfonic acid functional group.

3. The preparation method according to claim 2, wherein The hydrogen-containing functional group is selected from one or more of a hydroxyl group, a thiol group, and a carboxylic acid group.

4. The preparation method according to claim 3, wherein The passivating agent with a hydrogen-containing functional group is selected from one or more of quinone hydroquinone, polyvinyl alcohol, and 3-mercaptopropionic acid; and / or The passivating agent with a phosphonic acid functional group is selected from (2-(9H-carbazol-9-yl)ethyl)phosphonic acid; and / or The passivating agent with sulfonic acid functional group is selected from one or more of dodecylbenzenesulfonic acid and 2-acrylamide-2-methyl-1-propanesulfonic acid.

5. The preparation method according to any one of claims 1 to 4, wherein: Before the step of coating the passivation solution on the cut edge of the solar cell, the preparation method further comprises: At least the passivating agent is added into an organic solvent for mixed dissolution, wherein the organic solvent is selected from one or more of isopropanol, ethylene glycol, ethanol and deionized water; The passivation solution is prepared by magnetic stirring.

6. The preparation method according to claim 5, wherein: At least the passivating agent is added into an organic solvent for mixed dissolution, comprising: The passivator, the auxiliary agent and the organic solvent are mixed and dissolved, wherein the auxiliary agent is selected from one or more of propylene glycol methyl ether acetate, sulfuric acid and graphene.

7. The preparation method according to any one of claims 1 to 4, wherein: After the step of coating the passivation solution on the cut edge of the solar cell, the preparation method further comprises: In a preset temperature and humidity environment, the solar cell is placed vertically for a preset time, wherein the cut edge faces downward.

8. The preparation method according to any one of claims 1 to 4, wherein: In the step of annealing the cut solar cell sheets, the annealing temperature is 80-190° C. and the annealing time is 5-30 minutes.

9. A crystalline silicon solar cell, wherein the solar cell is obtained according to the method for preparing a crystalline silicon solar cell according to any one of claims 1 to 8.

10. A solar cell, comprising the crystalline silicon solar cell sheet according to claim 9.

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