Quantum magnetic label based on interlayer weak coupling device and preparation method thereof

Abstract

The invention belongs to the technical field of quantum physics and quantum measurement, and particularly relates to a quantum magnetic label based on an interlayer weak coupling device and a preparation method of the quantum magnetic label. In order to realize high-precision magnetic field intensity calibration in a low-temperature strong magnetic field environment, under the conditions of low temperature (such as T = 5K and below) and strong vertical magnetic field intensity (B = 5T and above), the magnetic field intensity is calibrated; and establishing a linear scale relationship delta D / B = e2 / h between a magnetic field and an interlayer displacement electric field difference value by using a quantization phenomenon of a ratio of the interlayer displacement electric field difference value to the magnetic field intensity in a quantization checkerboard formed by intersecting quantization Landau energy levels of longitudinal resistance in a large-angle rotation angle graphene system, so as to realize calibration of the magnetic field intensity B.

Description

Technical Field

[0001] The invention belongs to the technical field of quantum physics and quantum measurement, and in particular relates to a quantum magnetic scale based on an interlayer weak coupling device and a preparation method thereof. Background Art

[0002] Magnetic field strength is one of the important physical quantities in nature. How to measure magnetic field strength has a wide range of application value in the field of modern science and technology. For example, high-precision magnetic field measurement plays a vital role in physics, material science, geological exploration, medical imaging and industrial detection. The accurate measurement and calibration of magnetic fields rely on high-performance magnetic scales (magnetic field calibration devices). The working principle of magnetic scales can be calibrated Hall magnetic field sensors, nuclear magnetic resonance field meters, etc. With the increasing demand for high-precision magnetic field measurements in extreme environments, research and development of magnetic scales with higher accuracy, sensitivity and applicability to extreme environments such as strong magnetic fields, extremely low temperatures, and ultra-high voltages has become an important direction of physics and metrology research.

[0003] Traditional magnetic field calibration technology relies on a series of mature methods, such as nuclear magnetic resonance (NMR) magnetic calibration and superconducting quantum interference device (SQUID), which are usually used for high-precision magnetic field measurement. NMR technology realizes magnetic field calibration by measuring the linear relationship between the Larmor precession frequency of atomic nuclear spins in the magnetic field and the magnetic field strength. The advantages of this method include high stability and high measurement accuracy (accuracy can reach 1ppm, and linearity can reach 0.1ppm). However, NMR technology has extremely high requirements for magnetic field uniformity, and the equipment is complex, the probe volume is large, and the spatial resolution of the field is usually not high. At the same time, the NMR system is expensive and has high maintenance costs, which makes it difficult to meet the needs of portability and miniaturization. Superconducting quantum interference device (SQUID) is a highly sensitive flux measurement device. When used for weak magnetic field measurement, it is necessary to first calibrate the effective area of ​​the flux coupling coil. Since SQUID is a nonlinear device, it is very susceptible to interference from the environmental magnetic field, causing the flux locking loop to lose lock and fail to work normally. This limits SQUID to work only in a laboratory environment with good magnetic shielding environment, greatly limiting its scope of application. The limitations of these traditional magnetic calibration technologies have prompted researchers to explore new magnetic calibration technologies based on quantum phenomena, especially for applications in extreme environments such as low temperatures and strong magnetic fields. Quantization phenomena can provide higher precision and more widely applicable magnetic field measurements and calibrations.

[0004] Graphene is a new type of two-dimensional material that has made breakthrough progress in the field of nanomaterials in recent years. It has unique physical properties, including ultra-high electrical conductivity, mechanical strength, flexibility and transparency. The electronic band structure of graphene can form a quantum Hall effect under low temperature and strong magnetic field. This phenomenon provides a theoretical basis for high-precision quantization calibration of magnetic fields. The quantum Hall effect refers to the fact that under low temperature and strong magnetic field environment, the movement of electrons in a two-dimensional electronic system is restricted to the Landau energy level, and the electronic conductivity shows quantized jumps. For an ideal two-dimensional system, the conductivity is quantized and has a clear relationship with the Planck constant h and the electron charge: σ = e 2 / h*N, where N is a quantized integer value. Based on this quantized conductivity, it is expected to realize a high-precision magnetic field calibration method that can be traced back to basic physical constants, and realize in-situ calibration of low-temperature strong magnetic fields. Therefore, exploring the development of a new type of measurement standard quantum magnetometer based on the graphene system with in-situ magnetic field calibration capability has a very broad application prospect. Summary of the invention

[0005] The purpose of the present invention is to provide an interlayer weak coupling device and a preparation method thereof, using materials such as two-dimensional layered graphene with high mobility characteristics at low temperatures as the intermediate core layer material of the corner system, to realize an interlayer weak coupling large-angle corner dual-coronary device.

[0006] Another object of the present invention is to provide a quantum magnetic scale based on the device and a preparation method thereof, which is based on the Landau energy level intersection of the quantized interlayer weak coupling large-angle rotation system to realize the quantization principle of the critical displacement electric field and magnetic field ratio of interlayer charge transfer. It is a new type of quantum magnetic scale that can be widely used in quantum technology, precision measurement and high-field physics experiments, especially suitable for magnetic field strength calibration under extreme environments of extremely low temperature and strong magnetic field.

[0007] To achieve the above object, the present invention adopts the following technical solutions:

[0008] On the one hand, the present invention provides an interlayer weak coupling device, comprising a substrate, a bottom gate, a bottom packaging layer, a large-angle interlayer corner layer and a top packaging layer arranged in sequence from bottom to top, a plurality of contact electrodes are arranged on both sides of the top packaging layer to form ohmic contact with the large-angle interlayer corner layer, and an insulating dielectric layer and a top gate are arranged in sequence on the top packaging layer.

[0009] Furthermore, the thickness of the large-angle interlayer corner layer is not more than 100 nm, and a heterojunction or homojunction system is prepared using two layers of materials with high mobility at low temperatures, such as multilayer graphene, transition metal sulfide compounds and other two-dimensional materials with high mobility. Two-dimensional layered graphene can be selected, and a large-angle corner can be achieved through van der Waals interaction between the two layers of two-dimensional layered graphene.

[0010] Furthermore, the large-angle interlayer rotation layer uses two layers of two-dimensional layered graphene, and the large-angle rotation is achieved through van der Waals interaction between the two layers of two-dimensional layered graphene.

[0011] Furthermore, the substrate is one of a SiO2 substrate, a Si substrate, a SiC substrate, a quartz substrate, a mica sheet or a flexible substrate.

[0012] Furthermore, the bottom gate, top gate and contact electrode are all conductive materials, such as one or more of Bi, Cr, Ti, Au, Pd, Sc, Ag, Ni and few-layer graphene, and the bottom packaging layer, top packaging layer and insulating dielectric layer are all insulator materials, such as hexagonal boron nitride, HfLaO, HfO2 or Al2O3.

[0013] Furthermore, the thickness of the bottom gate and the top gate is 1 nm to 1000 nm, the thickness of the bottom encapsulation layer is 1 nm to 100 nm, and the thickness of the top encapsulation layer is 10 nm to 100 nm.

[0014] In a second aspect, the present invention provides a method for preparing an interlayer weak coupling device, comprising the following steps:

[0015] Step 1, preparing a bottom gate and a bottom encapsulation layer on a substrate;

[0016] Step 2, transferring the large-angle interlayer corner layer and the top encapsulation layer to the bottom encapsulation layer to form a heterogeneous structure;

[0017] Step 3, after patterning the heterostructure into a Hall bar shape, a contact electrode is prepared on the heterojunction;

[0018] Step 4, prepare a top encapsulation layer and a top gate on the top in sequence, thereby obtaining an interlayer weak coupling device (a dual-gate adjustable device capable of measuring lateral and longitudinal resistances).

[0019] Furthermore, the bottom encapsulation layer, the large-angle interlayer corner layer, the top encapsulation layer and the insulating dielectric layer are prepared by utilizing van der Waals forces, the heterostructure is patterned into a Hall bar shape by electron beam exposure combined with reactive ion etching, and the bottom gate, top gate and contact electrode are prepared by metal evaporation.

[0020] In the third aspect, the present invention provides a quantum magnetic scale based on an interlayer weak coupling device. Under the conditions of low temperature (T = 5K and below) and strong vertical magnetic field (magnetic field of B = 5T and above), the linear scaling relationship between the magnetic field and the displacement electric field difference is established by utilizing the quantization phenomenon of the interlayer displacement electric field difference and the magnetic field ratio between two adjacent crossing peaks in the quantized checkerboard formed by the crossing of the quantized Landau energy levels of the longitudinal resistance in the interlayer weak coupling device, thereby achieving high-precision magnetic field intensity calibration in a low temperature and strong magnetic field environment.

[0021] Under the condition of increasing the vertical magnetic field strength, each intersection will evolve into a four-by-four quantized Landau energy level intersection matrix due to the splitting of spins and energy valleys, that is, a quantized checkerboard electronic state of four-by-four intersections. In such a chessboard unit of uniform size, along the vertical electric field direction (defined as the y direction), the ratio of the electric field difference δD of each pair of adjacent high resistance grid points (this grid point is the junction of two adjacent quantum Hall filling states) to the vertical magnetic field B at this time is a quantized value, that is, δD / B=e 2 / h (e is the elementary charge, h is Planck's constant). The physical reason is that under the premise that the total filling factor of the double-layer Landau level remains unchanged, the ratio of the critical condition of the electric field driving the interlayer charge transfer between two neighboring intersections and the magnetic field strength satisfies the proportionality between the unit charge and the unit quantum flux. In such a chessboard unit of uniform size, along the direction of carrier concentration (or quantum filling factor) (defined as the x direction), the distance between adjacent filling factors is also quantized e 2 / h is an integer multiple of 1. Therefore, each four-by-four checkerboard cell is equal in size in both the x and y directions.

[0022] The quantized checkerboard can be obtained by the following method: Under a low temperature magnetic field, the longitudinal resistance of the dual-gate structure device is measured in the interlayer displacement electric field and carrier concentration parameter space.

[0023] The chessboard with full or partial quantization is calibrated under a relatively low magnetic field to obtain the actual electric displacement vector value after the interlayer quantum capacitance correction. The slope of the linear fitting of δD and B after calibration should be the von Klitschke constant. After calibration, this device can directly obtain the actual unknown magnetic field strength to be measured by measuring the difference between adjacent high resistance grid points along the interlayer electric field direction of the chessboard under low temperature and unknown strong magnetic field.

[0024] Furthermore, the accuracy is improved by measuring the difference between adjacent high-resistance grid points along the interlayer electric field direction of the chessboard multiple times.

[0025] In a fourth aspect, the present invention provides a method for preparing a quantum magnetic mark based on an interlayer weak coupling device, comprising the following steps:

[0026] Step 1, characterizing the basic parameters of the interlayer weak coupling device by low temperature, weak vertical magnetic field or strong vertical magnetic field;

[0027] Step 2: Conduct a standard four-terminal AC analysis test, build a test system for the longitudinal resistance changing with the dual-gate voltage or carrier concentration and interlayer displacement electric field, and measure the displacement electric field difference δD between the nearest neighbor intersections of the four-by-four Landau level cross quantization chessboard with degenerate layer polarization, spin polarization, and valley polarization. 2 *δD realizes the calibration of magnetic field strength B under extreme environment of low temperature and strong magnetic field, where e is unit charge and h is unit quantum flux.

[0028] Using interlayer weakly coupled large-angle rotation graphene as the basic unit, at the Landau level intersection under low temperature and strong magnetic field, the layer, spin, and valley polarization are completely degenerate, forming a four-by-four Landau level intersection matrix. Under the premise that the Landau level filling factor of the fixed rotation angle system remains unchanged, the ratio of the critical electric field δD that drives the interlayer charge transfer between two adjacent Landau level intersections to the perpendicular magnetic field strength B satisfies that the unit charge e is proportional to the unit quantum flux (h / e), that is, e 2 / h, by measuring the displacement electric field difference δD between two adjacent Landau level cross peaks at a fixed filling factor in the Landau level cross four-by-four quantized matrix region in the interlayer weak coupling large-angle rotation graphene system, and then combining the calculation formula B = h / e 2 *δD can realize the calibration of magnetic field strength B in extreme environments of low temperature and strong magnetic field.

[0029] Compared with the prior art, the present invention has the following advantages:

[0030] 1. Applicable to low temperature and strong magnetic field environment: The quantization phenomenon is particularly significant under low temperature and strong magnetic field conditions, and the calibration accuracy is higher. Graphene materials have good low temperature conductivity and mechanical strength, and are suitable for application scenarios of extremely low temperature (such as liquid helium temperature and below) and high magnetic field (five to tens of Tesla), which provides a wider range of environmental adaptability for magnetic field measurement.

[0031] 2. Linear scaling relationship: The linear relationship between the interlayer displacement electric field difference and the magnetic field is established through the quantization effect, achieving accurate calibration within the continuous magnetic field range.

[0032] 3. High-quality packaging: The use of high-quality dielectric materials such as boron nitride for packaging improves the electrical isolation performance and thermal stability of the system.

[0033] 4. Higher accuracy and stability and low magnetic field calibration drift: Based on the quantized characteristics of the ratio of the interlayer displacement electric field difference to the magnetic field, the system performs system calibration in the low temperature and low magnetic field range. In the low temperature and strong magnetic field environment, the quantized calibration of the magnetic field intensity can be achieved with near-zero drift characteristics, which can provide higher accuracy and long-term stability in extreme environments.

[0034] 5. Small size and high spatial resolution: Based on the interlayer weak coupling large-angle rotation graphene system of two-dimensional materials, the in-plane and out-of-plane sizes are at the micron and nanometer levels respectively. The quantum magnetic scale system based on the above micro-nano system has the advantages of small size and high spatial resolution. It can be used for local precision measurement, especially for magnetic field measurement in tiny structures.

[0035] 6. Low requirements for magnetic field uniformity: The in-plane and out-of-plane dimensions of the device based on the interlayer weakly coupled large-angle rotation graphene system are in the micrometer and nanometer scales, so the uniformity requirements for the target magnetic field are low and the application range is wide, especially under relatively non-uniform magnetic field conditions, it can still be accurately calibrated.

[0036] 7. Simple system design: Compared with the mature nuclear magnetic resonance system, the quantum magnetic scale system has a simpler design and is easier to operate and maintain.

[0037] 8. It is convenient to realize the uniformity measurement of the three-dimensional magnetic field: by designing a three-dimensional spherical or cubic sample array, the uniformity measurement of the three-dimensional magnetic field in space can be realized at one time, which is convenient for the uniformity evaluation of the magnetic field of the medical nuclear magnetic resonance imaging system and other high-uniformity magnets.

[0038] 9. Flexibility, transparency and wearability: The magnetic calibration system based on two-dimensional materials has unique physical properties, such as flexibility, transparency and wearability. It can adapt to deformations such as bending and twisting, and is suitable for magnetic field calibration in a variety of environments. The transparent properties of graphene allow the system to be calibrated without blocking light, which is suitable for magnetic field measurement in transparent displays and other optical devices. This gives it broad application prospects in future portable electronic devices, flexible displays, and wearable devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 A schematic diagram of the structure of an interlayer weak coupling device provided by an embodiment of the present invention;

[0040] Figure 2 It is a Landau level crossing point diagram of an interlayer weak coupling device of an embodiment of the present invention in a low temperature (T=1.6K) and vertical magnetic field (magnetic field strength B=5T) environment.

[0041] Figure 3A schematic diagram of a Landau level cross quantization chessboard of an interlayer weak coupling device according to an embodiment of the present invention under low temperature (T=1.6K) and vertical strong magnetic field (magnetic field strength B=12T) environment.

[0042] Figure 4 is the magnetic field calibration curve;

[0043] Figure 5 Schematic diagram of the quantum magnetic scale testing method based on interlayer weak coupling devices. DETAILED DESCRIPTION

[0044] In order to further illustrate the technical solution of the present invention, the present invention is further described below through embodiments.

[0045] Example 1

[0046] 1) Using electron beam exposure, evaporation, PPC-assisted dry transfer technology and annealing technology, a clean bottom gate 7 / bottom encapsulation layer 6 is pre-prepared on a clean substrate 8, the annealing temperature is in the range of 200° C. to 400° C., and the vacuum holding time is greater than or equal to 30 minutes. In this embodiment, the substrate 8 adopts a highly doped Si substrate, and the bottom gate 7 / bottom encapsulation layer 6 is Au / h-BN;

[0047] 2) With the help of the anodizing function of an atomic force microscope, a single-layer uniform and clean two-dimensional layered graphene obtained by mechanical cleavage is oxidized and cut into two independent graphene sheets 1 and 2, that is, the large-angle interlayer corner layer 5 of this embodiment uses two layers of graphene;

[0048] 3) PC-assisted dry transfer technology is used to sequentially lift the uniform few layers of h-BN (10-60 nm thickness) obtained by mechanical cleavage and the graphene sheet 1 cut in step 2) using a sticky polymer (PDMS / PC double-layer structure) to obtain a four-layer structure of PDMS / PC / h-BN / graphene sheet 1, that is, the top encapsulation layer 4 of this embodiment is made of h-BN;

[0049] 4) Keeping the four-layer structure in step 3) still, the sample stage carrying graphene 2 is rotated to achieve a preset large-angle rotation between layers (for example: θ = 10 degrees, 20 degrees, 30 degrees, etc.).

[0050] 5) The four-layer structure obtained in step 3) is used to lift the graphene sheet 2 rotated in step 4) by using the interlayer van der Waals interaction to obtain a five-layer structure of PDMS / PC / h-BN / large-angle rotated double-layer graphene.

[0051] 6) The PDMS / PC / h-BN / large-angle-rotated double-layer graphene five-layer structure prepared in step 5) is melted and transferred to the Au / h-BN prepared in step 1), and the PC is further cleaned with chloroform, acetone and isopropanol to obtain a two-dimensional stacked h-BN / large-angle-rotated double-layer graphene / h-BN / Au heterostructure with clean surface and interface;

[0052] 7) Use electron beam exposure (EBL) and reactive ion etching (RIE) to pattern the device into Figure 1 The middle region shown has a Hall bar-shaped structure;

[0053] 8) Using electron beam exposure (EBL) and electron beam evaporation (EB) technology, deposit the following on the sample patterned in step 7) Figure 1 The contact electrode 3 shown is made of Ti / Au (for example, Ti / Au=5 / 50nm);

[0054] 9) using atomic layer deposition (ALD) to uniformly deposit an insulating dielectric layer 2 with a thickness of 10 nm to 50 nm on the surface of the sample, wherein the insulating dielectric layer 2 is an oxide dielectric layer (such as insulating materials such as aluminum oxide or hafnium oxide);

[0055] 10) Using electron beam lithography (EBL) and electron beam evaporation (EB) techniques, deposit the following on the sample: Figure 1 The top gate electrode 1 shown is made of metal (eg Ti / Au=5 / 30nm), thus obtaining an interlayer weak coupling device;

[0056] 11) Testing the device using a probe station at room temperature to characterize the transfer characteristic curve and current-voltage characteristic curve at room temperature, and to check whether the device contact electrode 3 has good contact and whether the device has top-gate and bottom-gate controllability;

[0057] 12) Connect the device to the sample trailer using a Wire-Bonder, load it into a low-temperature vacuum chamber, cool it to 1.5K, and perform a low-temperature four-terminal AC transmission test. Figure 5 The schematic diagram of the quantum magnetic scale test method for the interlayer weak coupling device shown in the figure, when a low vertical magnetic field is applied, the characteristic curves of the longitudinal resistance under different magnetic fields with the dual gate (top gate and bottom gate) voltage are obtained (or converted into characteristic curves with the carrier concentration and interlayer displacement electric field), and the low vertical magnetic field (such as Figure 2 The Landau level crossing characteristics under the magnetic field strength of B = 4T shown;

[0058] from Figure 2It can be seen that in the quantum magnetic scalar system based on interlayer weak coupling devices, when the vertical magnetic field strength is 4T, the layer polarization of the system is split, and the system shows obvious Landau level crossing phenomenon;

[0059] 13) The device inside the cryogenic vacuum cavity is tested at a higher vertical magnetic field (e.g. B = 5T to 40T) to obtain a four-by-four Landau level cross array or chessboard (e.g. Figure 3 As shown), and measure the difference δD between the nearest neighbor Landau level intersections in the interlayer displacement electric field direction in the case of fixed carriers (as shown in Figure 5 δD measurement method shown), by the formula B = h / e 2 *δD can be used to calibrate the magnetic field strength B in extreme environments with low temperature and strong magnetic field (e.g. Figure 4 );

[0060] from Figure 3 It can be seen that when the vertical magnetic field strength is 12T, the longitudinal resistance of the system is Figure 2 The Landau level crossing points (as shown in the figure) are split into a four-by-four Landau level crossing array checkerboard. The longitudinal resistance along the horizontal axis tangent can obtain an integer filling factor. Along the vertical axis direction (i.e., the ratio of the interlayer displacement electric field to the magnetic field intensity), the ordinate difference between two adjacent longitudinal resistance peaks is e 2 / h, showing quantized behavior;

[0061] from Figure 4 It can be seen that there is a linear correlation between the magnetic field intensity B and the displacement electric field difference δD, and the coefficient is the KvKlitzing constant;

[0062] from Figure 5 It can be seen that the specific working implementation method of the quantum magnetic scalar system based on interlayer weak coupling devices is as follows: prepare a micron-sized double-gate Hall bar interlayer weak coupling device array, use the AC four-terminal method to test the device under low temperature and strong magnetic field, collect longitudinal resistance information through the computer PC, and obtain the four-by-four cross Landau energy level cross array checkerboard of longitudinal resistance with carrier concentration and interlayer displacement electric field strength in this environment. By measuring the displacement electric field difference δD between two adjacent Landau energy level cross peaks under fixed carrier concentration, the formula B=h / e 2 *δD can calibrate the magnetic field strength B in extreme environments of low temperature and strong magnetic field.

[0063] Example 2

[0064] The difference from Example 1 is that: in step 2), the two-dimensional layered graphene is a material prepared by a chemical vapor deposition (CVD) method.

[0065] The resulting interlayer weakly coupled large-angle rotation graphene device can realize a four-by-four Landau level crossover quantization phenomenon under low temperature and strong magnetic field environment.

[0066] Example 3

[0067] The difference from Example 1 is that in step 1), the bottom gate 7 / bottom encapsulation layer 6 is Au / Al2O3, Au / HfO2, and is prepared by atomic layer deposition (ALD) method.

[0068] The resulting interlayer weakly coupled large-angle rotation graphene device can realize a four-by-four Landau level crossover quantization phenomenon under low temperature and strong magnetic field environment.

[0069] Example 4

[0070] The difference from Example 1 is that in step 2), a single-layer uniform and clean graphene obtained by mechanical cleavage is cut into two independent graphene sheets 1 and 2 by laser cutting.

[0071] The resulting interlayer weakly coupled large-angle rotation graphene device can realize a four-by-four Landau level crossover quantization phenomenon under low temperature and strong magnetic field environment.

[0072] Example 5

[0073] The difference from Example 1 is that: in step 9), the insulating dielectric layer 2 is 10 nm to 60 nm h-BN obtained by mechanical dissociation, and the dry transfer technology is used to achieve the above transfer using a sticky polymer (PDMS single-layer material or PDMS / PC double-layer structure);

[0074] The resulting interlayer weakly coupled large-angle rotation graphene device can realize a four-by-four Landau level crossover quantization phenomenon under low temperature and strong magnetic field environment.

[0075] Example 6

[0076] The difference from Example 1 is that in step 8), the contact electrode 3 is made of one or more metals selected from Bi, Cr, Ti, Au, Pd, Sc, Ag, Ni and few-layer graphene.

[0077] The resulting interlayer weakly coupled large-angle rotation graphene device can realize a four-by-four Landau level crossover quantization phenomenon under low temperature and strong magnetic field environment.

[0078] Example 7

[0079] The difference from Example 1 is that: in step 1), the substrate 1 is a SiC substrate, a high-resistance silicon substrate, a sapphire substrate or other flexible substrates.

[0080] The resulting interlayer weakly coupled large-angle rotation graphene device can realize a four-by-four Landau level crossover quantization phenomenon under low temperature and strong magnetic field environment.

[0081] The above shows and describes the main features and advantages of the present invention. It is obvious to those skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, no matter from which point of view, the embodiments should be regarded as exemplary and non-restrictive. The scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes that fall within the meaning and scope of the equivalent elements of the claims are included in the present invention.

[0082] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. An interlayer weak coupling device, characterized in that: The invention comprises a substrate (8), a bottom gate (7), a bottom packaging layer (6), a large-angle interlayer corner layer (5) and a top packaging layer (4) which are arranged in sequence from bottom to top; a plurality of contact electrodes (3) are arranged on both sides of the top packaging layer (4) to form ohmic contact with the large-angle interlayer corner layer (5); and an insulating dielectric layer (2) and a top gate (1) are arranged in sequence on the top packaging layer (4).

2. The interlayer weak coupling device label according to claim 1, characterized in that: The thickness of the large-angle interlayer corner layer (5) is no more than 100 nm, and two layers of materials with high mobility at low temperatures are used.

3. The interlayer weak coupling device label according to claim 2, characterized in that: The large-angle interlayer rotation layer (5) uses two layers of two-dimensional layered graphene, and the large-angle rotation is achieved between the two layers of two-dimensional layered graphene through van der Waals interaction.

4. The interlayer weak coupling device label according to claim 1, characterized in that: The substrate (8) is one of a SiO2 substrate, a Si substrate, a SiC substrate, a quartz substrate, a mica sheet or a flexible substrate.

5. The interlayer weak coupling device according to claim 1, characterized in that: The bottom gate (7), the top gate (1) and the contact electrode (3) are all made of conductive materials, the bottom encapsulation layer (6), the top encapsulation layer (4) and the insulating dielectric layer (2) are all made of insulating materials, the thickness of the bottom gate (7) and the top gate (1) is 1 nm to 1000 nm, the thickness of the bottom encapsulation layer (6) is 1 nm to 100 nm, and the thickness of the top encapsulation layer (4) is 10 nm to 100 nm.

6. A method for preparing an interlayer weak coupling device according to any one of claims 1 to 5, characterized in that: The following steps are involved: Step 1, preparing a bottom gate (7) and a bottom encapsulation layer (6) on a substrate (8); Step 2, transferring the large-angle interlayer corner layer (5) and the top encapsulation layer (4) to the bottom encapsulation layer (6) to form a heterogeneous structure; Step 3, after patterning the heterostructure into a Hall bar shape, a contact electrode (3) is prepared on the heterojunction; Step 4, preparing a top encapsulation layer (4) and a top gate (1) on the top in sequence, thereby obtaining an interlayer weak coupling device.

7. The method for preparing an interlayer weak coupling device according to claim 6, characterized in that: The bottom encapsulation layer (6), the large-angle interlayer corner layer (5), the top encapsulation layer (4) and the insulating dielectric layer (2) are all prepared by utilizing van der Waals forces, and the heterostructure is patterned into a Hall bar shape by electron beam exposure combined with reactive ion etching, and the bottom gate (7), the top gate (1) and the contact electrode (3) are prepared by a metal evaporation method.

8. A quantum magnetic marker based on the interlayer weak coupling device according to any one of claims 1 to 4, characterized in that: Under the conditions of low temperature and strong vertical magnetic field, the linear scaling relationship between the magnetic field and the displacement electric field difference is established by utilizing the quantization phenomenon of the interlayer displacement electric field difference and the magnetic field ratio between two adjacent cross peaks in the quantized checkerboard formed by the crossover of the quantized Landau energy levels of the longitudinal resistance in the interlayer weak coupling device, thereby achieving high-precision magnetic field intensity calibration in low temperature and strong magnetic field environment.

9. A quantum magnetic marker based on interlayer weak coupling device according to claim 8, characterized in that: The accuracy is improved by measuring the difference between adjacent high-resistance grid points of the chessboard along the interlayer electric field direction for multiple times.

10. A method for preparing a quantum magnetic mark based on an interlayer weak coupling device according to claim 8, characterized in that: The following steps are involved: Step 1, characterizing the basic parameters of the interlayer weak coupling device by low temperature, weak vertical magnetic field or strong vertical magnetic field; Step 2: Conduct a standard four-terminal AC analysis test, build a test system for the longitudinal resistance changing with the dual-gate voltage or carrier concentration and interlayer displacement electric field, and measure the displacement electric field difference δD between the nearest neighbor intersections of the four-by-four Landau level cross quantization chessboard with degenerate layer polarization, spin polarization, and valley polarization. 2 *δD realizes the calibration of magnetic field strength B under extreme environment of low temperature and strong magnetic field, where e is unit charge and h is unit quantum flux.

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