Plasma jet nozzle and plasma enhanced chemical vapor deposition equipment

Abstract

The invention relates to the technical field of plasma coating, and particularly provides a plasma jet nozzle and plasma enhanced chemical vapor deposition equipment, and the nozzle comprises a nozzle body which is provided with a plasma excitation bin and a reaction bin; the precursor spraying pipe is located in the reaction bin, and the height of the bottom of the precursor spraying pipe is smaller than that of the air inlet; the first spiral airflow guide structure comprises a first circular ring mounting plate and a plurality of flow baffles, the flow baffles are arranged on the first circular ring mounting plate in a circumferential array mode, the height of the top of each flow baffle is larger than that of the air inlet, and the height of the bottom of each flow baffle is smaller than that of the air inlet and larger than that of the bottom of the precursor spraying pipe; the plate surface of the flow baffle is parallel to the axis of the precursor spraying pipe, and one side of the flow baffle obliquely intersects with the axis of the precursor spraying pipe; the spray head can effectively solve the problems that the reaction of a precursor material on the surface of a matrix is insufficient and the crosslinking degree of a finally formed film is low due to the fact that part of tiny liquid drops are condensed into small liquid drops and / or large liquid drops exceeding the micron level.

Description

Technical Field

[0001] The present application relates to the technical field of plasma coating, and in particular to a plasma jet nozzle and a plasma enhanced chemical vapor deposition device. Background Art

[0002] Atmospheric pressure plasma coating process is widely used in the fields of automobile manufacturing and material surface performance improvement. Atmospheric pressure plasma coating process requires the use of plasma in the reaction chamber of the plasma jet nozzle to activate and excite the atomized precursor material (composed of gas and tiny droplets) so that the atomized precursor material undergoes a chemical reaction on the substrate surface, thereby coating a thin film on the substrate surface. During the propagation of the atomized precursor material, some tiny droplets may condense into small droplets exceeding the micron level, or even form large droplets. When there are small droplets and / or large droplets exceeding the micron level in the precursor material, the activation and excitation effect of plasma on the precursor material is limited. Therefore, the related technology has the problem that the precursor material does not react sufficiently on the substrate surface due to the condensation of some tiny droplets into small droplets and / or large droplets exceeding the micron level, and the cross-linking degree of the finally formed thin film is low, which leads to poor film quality of the atmospheric pressure plasma coating process.

[0003] There is no effective technical solution to the above problems. It should be noted that the above information disclosed in this section is only used to understand the background of the present invention, and therefore may contain information that does not constitute prior art. Summary of the invention

[0004] The purpose of the present application is to provide a plasma jet nozzle and plasma enhanced chemical vapor deposition equipment, which can effectively solve the problem of insufficient reaction of the precursor material on the substrate surface and low cross-linking degree of the finally formed film due to the condensation of some tiny droplets into small droplets and / or large droplets exceeding the micron level.

[0005] In a first aspect, the present application provides a plasma jet nozzle, comprising: The nozzle body has a plasma excitation chamber and a reaction chamber, the side wall of the reaction chamber is provided with an air inlet connected to the output end of the plasma excitation chamber, the bottom of the reaction chamber is connected to the outlet of the nozzle body, and the plasma excitation chamber is used to output plasma; The precursor ejection pipe is located in the reaction chamber, the height of the bottom of which is less than the height of the air inlet, and is used to eject the atomized precursor material; The first spiral airflow guiding structure is sleeved on the outside of the precursor ejection pipe and installed in the reaction chamber, and includes a first circular mounting plate and a plurality of baffles. The plurality of baffles are arranged in a circular array on the first circular mounting plate, the height of the top of the baffle is greater than the height of the air inlet, the height of the bottom of the baffle is less than the height of the air inlet and greater than the height of the bottom of the precursor ejection pipe, the plate surface of the baffle is parallel to the axis of the precursor ejection pipe, and one side of the baffle is inclined toward the axis of the precursor ejection pipe.

[0006] The present application provides a plasma jet nozzle, which can guide the plasma entering the reaction chamber to rotate around the precursor ejection pipe by using a first spiral airflow guiding structure, so as to heat and atomize the precursor material by using the plasma through heat conduction, thereby avoiding the situation where the tiny droplets in the atomized precursor material condense into small droplets and / or large droplets exceeding the micron level during the propagation process. Since there are no small droplets and / or large droplets exceeding the micron level in the precursor material of the present application, and the present application can increase the contact time between the plasma and the atomized precursor material by rotating the plasma around the atomized precursor material ejected from the precursor, and the present application can accelerate the molecular movement and collision by heating the precursor material to enhance the activity of the molecules, that is, the present application can fully activate and excite the atomized precursor material. Therefore, the present application can effectively solve the problem of insufficient reaction of the precursor material on the substrate surface and low cross-linking degree of the finally formed film due to the condensation of some tiny droplets into small droplets and / or large droplets exceeding the micron level, thereby effectively improving the film forming quality of the atmospheric pressure plasma coating process.

[0007] Optionally, the plasma jet nozzle also includes a second spiral airflow guide structure, which is mounted on the nozzle body and located at the input end of the plasma excitation chamber. The second spiral airflow guide structure includes a second circular mounting plate and a plurality of inclined through holes. An ionization component is mounted at the center of the second circular mounting plate. A plurality of inclined through holes are arranged in a circular array on the second circular mounting plate. The input end of the inclined through hole is connected to the gas supply assembly, and the output ends of the plurality of inclined through holes are all located in the plasma excitation chamber.

[0008] This technical solution is equivalent to using the second spiral airflow guiding structure to guide the gas entering the plasma excitation chamber into a spiral airflow. Since the gas entering the plasma excitation chamber is guided into a spiral airflow, and an ionization component is installed at the center of the second circular mounting plate, that is, the gas entering the plasma excitation chamber will rotate around the ionization component, that is, this technical solution can effectively prolong the residence time of the gas in the plasma excitation chamber and the contact time of the gas and the ionization component. Therefore, this technical solution can effectively increase the reaction time of the gas and particle clusters being bombarded, so that the gas and particle clusters are fully ionized and decomposed, thereby effectively increasing the amount of plasma.

[0009] Optionally, the number of the inclined through holes is 6-10.

[0010] Optionally, the outer side wall of the second annular mounting plate is provided with a first limit block, and the first limit block can interfere with the nozzle body.

[0011] Optionally, the output end of the plasma excitation chamber is connected to the air inlet of the reaction chamber through a Laval nozzle and an output pipe, and the output pipe is inclined downward.

[0012] Since the output end of the plasma excitation chamber of this technical solution is connected to the air inlet of the reaction chamber through the Laval nozzle and the output pipe, this technical solution is equivalent to using the Laval nozzle to increase the flow rate of the plasma, thereby effectively improving the reaction efficiency of the precursor material, and then effectively improving the coating efficiency of the atmospheric pressure plasma coating process.

[0013] Optionally, the plasma excitation chamber is retracted toward the reaction chamber.

[0014] Since the plasma excitation chamber of this technical solution shrinks toward the reaction chamber, this technical solution is equivalent to making the gas entering the plasma excitation chamber gather toward the ionization component, so that the gas and particle clusters are more easily bombarded, thereby effectively improving the ionization efficiency of the ionization component and increasing the amount of plasma.

[0015] Optionally, the spiral axis of the plasma passing through the first spiral airflow guiding structure coincides with the axis of the precursor ejection tube.

[0016] Optionally, the outer side wall of the first annular mounting plate is provided with a second limit block, the side wall of the reaction chamber has a groove that fits with the second limit block, and the second limit block can interfere with the bottom of the groove.

[0017] Optionally, the number of baffles is 2-4.

[0018] In a second aspect, the present application further provides a plasma enhanced chemical vapor deposition device, which includes the plasma jet nozzle provided in the first aspect above.

[0019] The present application provides a plasma enhanced chemical vapor deposition device, which can guide the plasma entering the reaction chamber to rotate around the precursor ejection pipe by using the first spiral airflow guiding structure, so as to heat and atomize the precursor material by means of heat conduction of the plasma, thereby avoiding the situation that the tiny droplets in the atomized precursor material condense into small droplets and / or large droplets exceeding the micron level during the propagation process. Since there are no small droplets and / or large droplets exceeding the micron level in the precursor material of the present application, and the present application can make the plasma ejected around the precursor The rotation of the atomized precursor material increases the contact time between the plasma and the atomized precursor material, and the present application can accelerate the molecular movement and collision by heating the precursor material to enhance the activity of the molecules, that is, the present application can fully activate and excite the atomized precursor material. Therefore, the present application can effectively solve the problem of insufficient reaction of the precursor material on the substrate surface and low cross-linking degree of the finally formed film due to the condensation of some tiny droplets into small droplets and / or large droplets exceeding the micron level, thereby effectively improving the film formation quality of the atmospheric pressure plasma coating process.

[0020] As can be seen from the above, the plasma jet nozzle and plasma enhanced chemical vapor deposition equipment provided by the present application can guide the plasma entering the reaction chamber to rotate around the precursor ejection pipe by utilizing the first spiral airflow guiding structure, so as to heat and atomize the precursor material by means of heat conduction of the plasma, thereby avoiding the situation in which the tiny droplets in the atomized precursor material condense into small droplets and / or large droplets exceeding the micron level during the propagation process. Since there are no small droplets and / or large droplets exceeding the micron level in the precursor material of the present application, and the present application can make the plasma The method of rotating the atomized precursor material sprayed around the precursor increases the contact time between the plasma and the atomized precursor material, and the present application can accelerate the molecular movement and collision by heating the precursor material to enhance the activity of the molecules, that is, the present application can fully activate and excite the atomized precursor material. Therefore, the present application can effectively solve the problem of insufficient reaction of the precursor material on the substrate surface and low cross-linking degree of the finally formed film due to the condensation of some tiny droplets into small droplets and / or large droplets exceeding the micron level, thereby effectively improving the film quality of the atmospheric pressure plasma coating process. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic diagram of the cross-sectional structure of a precursor ejection tube and a plasma jet nozzle provided in an embodiment of the present application.

[0022] Figure 2 A schematic diagram of the structure of a plasma jet nozzle provided in an embodiment of the present application which does not include a precursor ejection tube.

[0023] Figure 3 for Figure 2 Schematic diagram of the enlarged structure at A in FIG.

[0024] Figure 4 A schematic structural diagram of the second spiral airflow guiding structure and the first limiting block provided in an embodiment of the present application.

[0025] Figure 5 A schematic structural diagram of the first spiral airflow guide structure and the second limit block provided in an embodiment of the present application.

[0026] Figure 6 A schematic diagram of the structure of the catalyst plate provided in an embodiment of the present application.

[0027] Figure numerals: 1. nozzle body; 2. plasma excitation chamber; 3. reaction chamber; 31. first reaction zone; 32. second reaction zone; 33. third reaction zone; 4. output pipe; 5. precursor ejection pipe; 6. first spiral airflow guide structure; 61. first circular ring mounting plate; 62. baffle plate; 7. second spiral airflow guide structure; 71. second circular ring mounting plate; 72. inclined through hole; 8. first limit block; 9. Laval nozzle; 10. second limit block; 11. groove; 12. catalyst plate; 13. opening; 14. film-like material ejection pipe. DETAILED DESCRIPTION

[0028] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

[0029] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0030] First, as Figure 1-Figure 6 As shown, the present application provides a plasma jet nozzle, which includes: The nozzle body 1 has a plasma excitation chamber 2 and a reaction chamber 3. The side wall of the reaction chamber 3 is provided with an air inlet connected to the output end of the plasma excitation chamber 2. The bottom of the reaction chamber 3 is connected to the outlet of the nozzle body 1. The plasma excitation chamber 2 is used to output plasma. The precursor ejection pipe 5 is located in the reaction chamber 3, the height of the bottom of which is less than the height of the air inlet, and is used to eject the atomized precursor material; The first spiral airflow guiding structure 6 is sleeved on the outside of the precursor ejection pipe 5 and installed in the reaction chamber 3, and includes a first circular mounting plate 61 and a plurality of baffles 62. The plurality of baffles 62 are arranged in a circular array on the first circular mounting plate 62. The height of the top of the baffle 62 is greater than the height of the air inlet, the height of the bottom of the baffle 62 is less than the height of the air inlet and greater than the height of the bottom of the precursor ejection pipe 5, the plate surface of the baffle 62 is parallel to the axis of the precursor ejection pipe 5, and one side of the baffle 62 is inclined toward the axis of the precursor ejection pipe 5.

[0031] Among them, the plasma jet nozzle of this embodiment can use plasma to activate and excite the atomized precursor material and spray the activated and excited atomized precursor material onto the surface of the substrate, so that the precursor material undergoes a chemical reaction on the surface of the substrate. The nozzle body 1 of this embodiment has a plasma excitation chamber 2 and a reaction chamber 3. Specifically, the side wall of the reaction chamber 3 of this embodiment is provided with an air inlet connected to the output end of the plasma excitation chamber 2, and the plasma will enter the reaction chamber 3 through the output end of the plasma excitation chamber 2 and the air inlet of the reaction chamber 3. The precursor ejection pipe 5 of this embodiment can be the ejection pipe of an existing precursor evaporation device, and the precursor ejection pipe 5 is located in the reaction chamber 3. The height of the bottom of the precursor ejection pipe 5 is less than the height of the air inlet of the reaction chamber 3. The precursor ejection pipe 5 can eject the atomized precursor material, and the atomized precursor material is composed of gas and tiny droplets. The first spiral airflow guiding structure 6 of this embodiment is sleeved on the outside of the precursor ejection pipe 5 and installed in the reaction chamber 3. Specifically, the first spiral airflow guiding structure 6 of this embodiment includes a first circular mounting plate 61 and a plurality of baffles 62. The plurality of baffles 62 are arranged in a circular array on the first circular mounting plate 61. Since the height of the top of the baffle 62 is greater than the height of the air inlet, and the height of the bottom of the baffle 62 is less than the height of the air inlet, the plate surface of the baffle 62 is parallel to the axis of the precursor ejection pipe 5, and one side of the baffle 62 is inclined toward the axis of the precursor ejection pipe 5. Therefore, the plasma entering the reaction chamber 3 from the air inlet will flow to the position where the baffle 62 is located. The baffle 62 can change the flow direction of the plasma. Under the joint action of the plurality of baffles 62, the plasma flows downward in a spiral state. That is, this embodiment is equivalent to using the first spiral airflow guiding structure 6 to guide the plasma entering the reaction chamber 3 into a spiral airflow, and since the baffle of this embodiment The height of the bottom of the flow plate 62 is greater than the height of the bottom of the precursor ejection tube 5, that is, the plasma will rotate around the precursor ejection tube 5 and the atomized precursor material ejected from the precursor ejection tube 5, and the temperature of the plasma is higher than the temperature of the atomized precursor material, that is, the plasma rotating around the precursor ejection tube 5 will transfer heat to the atomized precursor material located in the precursor ejection tube 5 through the precursor ejection tube 5, and this embodiment can extend the contact time of the plasma with the precursor ejection tube 5 and the atomized precursor material ejected from the precursor ejection tube 5 by causing the plasma to rotate around the precursor ejection tube 5 and the atomized precursor material ejected from the precursor ejection tube 5. Therefore, this embodiment can effectively avoid the situation where tiny droplets in the atomized precursor material condense into large droplets during the propagation process, and this embodiment can also fully activate and excite the atomized precursor material so that the precursor material reacts fully on the substrate surface.

[0032] The present application provides a plasma jet nozzle, which can guide the plasma entering the reaction chamber 3 to rotate around the precursor ejection pipe 5 by using the first spiral airflow guiding structure 6, so as to heat and atomize the precursor material by using the plasma through heat conduction, thereby avoiding the situation where the tiny droplets in the atomized precursor material condense into small droplets and / or large droplets exceeding the micron level during the propagation process. Since there are no small droplets and / or large droplets exceeding the micron level in the precursor material of the present application, and the present application can increase the contact time between the plasma and the atomized precursor material by rotating the plasma around the atomized precursor material ejected by the precursor, and the present application can accelerate the molecular movement and collision by heating the precursor material to enhance the activity of the molecules, that is, the present application can fully activate and excite the atomized precursor material, so the present application can effectively solve the problem of insufficient reaction of the precursor material on the substrate surface and low cross-linking degree of the finally formed film due to the condensation of some tiny droplets into small droplets and / or large droplets exceeding the micron level, thereby effectively improving the film forming quality of the atmospheric pressure plasma coating process.

[0033] In some preferred embodiments, the plasma jet nozzle further comprises a second spiral airflow guiding structure 7, which is mounted on the nozzle body 1 and located at the input end of the plasma excitation chamber 2. The second spiral airflow guiding structure 7 comprises a second annular mounting plate 71 and a plurality of inclined through holes 72. An ionization assembly (not shown in the figure) is mounted at the center of the second annular mounting plate 71. A plurality of inclined through holes 72 are arranged in a circular array on the second annular mounting plate 71. The input end of the inclined through holes 72 is connected to the gas supply assembly. This embodiment can bombard the gas and particle clusters in the plasma excitation chamber 2 with the ionization assembly to ionize and crack the gas and particle clusters, thereby obtaining plasma. This embodiment is equivalent to using the second spiral airflow guiding structure 7 to guide the gas entering the plasma excitation chamber 2 into a spiral airflow. Since the gas entering the plasma excitation chamber 2 is guided into a spiral airflow, and an ionization component is installed at the center of the second circular mounting plate 71, that is, the gas entering the plasma excitation chamber 2 will rotate around the ionization component, that is, this embodiment can effectively prolong the residence time of the gas in the plasma excitation chamber 2 and the contact time between the gas and the ionization component. Therefore, this embodiment can effectively increase the reaction time of the gas and particle clusters being bombarded, so that the gas and particle clusters are fully ionized and cracked, thereby effectively increasing the amount of plasma. Preferably, a sealing component is provided between the ionization component of this embodiment and the second circular mounting plate 71. The sealing component can be a component that can improve airtightness, such as a sealing ring or a sealing strip. This embodiment ensures that all gases supplied by the gas supply component need to pass through the inclined through hole 72 before entering the plasma excitation chamber 2 by providing a sealing component between the ionization component and the second circular mounting plate 71.

[0034] In some preferred embodiments, the number of the inclined through holes 72 is 6-10. The number of the inclined through holes 72 in this embodiment is preferably 8, and this embodiment sets the number of the inclined through holes 72 to 6-10, which can effectively avoid the situation where the processing difficulty of the second spiral airflow guiding structure 7 is high due to too many inclined through holes 72, and the air intake of the plasma excitation chamber 2 is insufficient due to too few inclined through holes 72, making it difficult to form a stable spiral airflow.

[0035] In some preferred embodiments, the outer wall of the second annular mounting plate 71 is provided with a first stopper 8, and the first stopper 8 can conflict with the nozzle body 1. This embodiment can fix the second spiral airflow guide structure 7 on the nozzle body 1 by making the first stopper 8 conflict with the nozzle body 1, and the first stopper 8 can prevent the second spiral airflow guide structure 7 from accidentally moving on the nozzle body 1. Therefore, this embodiment can ensure the position accuracy of the inclined through hole 72, thereby effectively improving the stability and uniformity of the spiral airflow in the plasma excitation chamber 2. Since this embodiment can fix the second spiral airflow guide structure 7 on the nozzle body 1 by making the first stopper 8 conflict with the nozzle body 1 and remove the second spiral airflow guide structure 7 by making the first stopper 8 no longer conflict with the nozzle body 1, this embodiment can also effectively improve the convenience of installing or removing the second spiral airflow guide structure 7.

[0036] In some preferred embodiments, the output end of the plasma excitation chamber 2 is connected to the air inlet of the reaction chamber 3 through the Laval nozzle 9 and the output pipe 4, and the output pipe 4 is tilted downward. The Laval nozzle 9 of this embodiment is a nozzle designed based on the Bernoulli principle and the smooth flow principle. The cross-sectional area of ​​the input end of the Laval nozzle 9 is different from the cross-sectional area of ​​the output end of the Laval nozzle 9. The Laval nozzle 9 can increase the flow rate of the fluid entering it. Since the output end of the plasma excitation chamber 2 of this embodiment is connected to the air inlet of the reaction chamber 3 through the Laval nozzle 9 and the output pipe 4, this embodiment is equivalent to using the Laval nozzle 9 to increase the flow rate of the plasma, thereby effectively improving the reaction efficiency of the precursor material, and then effectively improving the coating efficiency of the atmospheric pressure plasma coating process.

[0037] In some preferred embodiments, the plasma excitation chamber 2 shrinks toward the reaction chamber 3. Since the plasma excitation chamber 2 of this embodiment shrinks toward the reaction chamber 3, this embodiment is equivalent to causing the gas entering the plasma excitation chamber 2 to gather toward the ionization component, so that the gas and particle clusters are more easily bombarded, thereby effectively improving the ionization efficiency of the ionization component and increasing the amount of plasma.

[0038] In some preferred embodiments, the spiral axis of the plasma passing through the first spiral airflow guiding structure 6 coincides with the center of the precursor ejection tube 5. This embodiment is equivalent to coinciding the spiral axis of the spiral airflow in the reaction chamber 3 with the axis of the precursor ejection tube 5, that is, the plasma wraps the atomized precursor material, so when there is a film layer that has not fully reacted on the substrate surface, the plasma outside the atomized precursor material can bombard the film layer to reactivate the film layer that has not fully reacted. Therefore, this embodiment can re-react the film layer that originally did not fully react by coinciding the spiral axis of the spiral airflow in the reaction chamber 3 with the axis of the precursor ejection tube 5, so that the film layer reacts fully, thereby effectively improving the film quality of the atmospheric pressure plasma coating process.

[0039] In some preferred embodiments, the outer side wall of the first annular mounting plate 61 is provided with a second stopper 10, and the side wall of the reaction chamber 3 has a groove 11 that fits with the second stopper 10, and the second stopper 10 can contact the bottom of the groove 11. Since the side wall of the reaction chamber 3 of this embodiment has a groove 11 that fits with the second stopper 10, this embodiment can fix the first spiral airflow guiding structure 6 in the reaction chamber 3 by sliding the second stopper 10 along the groove 11 until it contacts the bottom of the groove 11. This embodiment can also remove the first spiral airflow guiding structure 6 by sliding the second stopper 10 away from the bottom of the groove 11, so this embodiment can effectively improve the convenience of disassembling or installing the first spiral airflow guiding structure 6.

[0040] In some preferred embodiments, the number of baffles 62 is 2-4. The number of baffles 62 in this embodiment is preferably 3, and the number of baffles 62 in this embodiment is set to 2-4, which can avoid excessive airflow resistance or turbulence caused by too many baffles 62 under the premise of forming a stable spiral airflow.

[0041] In some preferred embodiments, the reaction chamber 3 includes a first reaction zone 31, and a catalyst plate 12 is provided in the first reaction zone 31, and the catalyst plate has a plurality of openings 13. The catalyst plate 12 of this embodiment is equivalent to a porous mesh plate, and a catalyst is provided on the catalyst plate 12 of this embodiment, and the main component of the catalyst is preferably a precious metal such as platinum, palladium and / or rhodium. Since the precious metal has the advantages of stable chemical properties, suitable working temperature, high selectivity for polymerization reactions that are conducive to film deposition, and the ability to catalyze the forward progress of the reaction, this embodiment can catalyze the cross-linking reaction after plasma bombardment of the precursor material by providing the catalyst plate 12 in the first reaction zone 31, so as to increase the reaction rate.

[0042] In some preferred embodiments, the reaction chamber 3 includes a second reaction zone 32 and a third reaction zone 33, the input end of the second reaction zone 32 is connected to the output end of the first reaction zone 31, the output end of the second reaction zone 32 is connected to the input end of the third reaction zone 33, the second reaction zone 32 expands away from the first reaction zone 31, the third reaction zone 33 shrinks away from the second reaction zone 32, and the output end of the third reaction zone 33 is connected to the film-like layer ejection pipe 14. Since the second reaction zone 32 of this embodiment expands away from the first reaction zone 31, that is, the diameter of the second reaction zone 32 is larger than the diameter of the first reaction zone 31, this embodiment can make the plasma, precursor materials and particle clusters flowing out of the first reaction zone 31 react evenly in a relatively larger space, and since the third reaction zone 33 of this embodiment shrinks away from the second reaction zone 32, this embodiment can use the third reaction zone 33 to concentrate substances such as plasma, precursor materials and particle clusters, so as to form a laminar flow feature that decreases from the center of the film-like material ejection tube 14 to the tube wall of the film-like material ejection tube 14 in the film-like material ejection tube 14, so that the finally formed film-like material is concentrated in the center of the film-like material ejection tube 14 for ejection, thereby effectively reducing the occurrence of the film-like material ejected from the film-like material ejection tube 14 being sputtered around and the film-like material being attached to the film-like material ejection tube 14.

[0043] As can be seen from the above, the plasma jet nozzle provided by the present application can guide the plasma entering the reaction chamber 3 to rotate around the precursor ejection pipe 5 by utilizing the first spiral airflow guiding structure 6, so as to heat and atomize the precursor material by means of heat conduction of the plasma, thereby avoiding the situation in which the tiny droplets in the atomized precursor material condense into small droplets and / or large droplets exceeding the micron level during the propagation process. Since there are no small droplets and / or large droplets exceeding the micron level in the precursor material of the present application, and the present application can spray the plasma around the precursor The rotation of the atomized precursor material increases the contact time between the plasma and the atomized precursor material, and the present application can accelerate the molecular movement and collision by heating the precursor material to enhance the activity of the molecules, that is, the present application can fully activate and excite the atomized precursor material. Therefore, the present application can effectively solve the problem of insufficient reaction of the precursor material on the substrate surface and low cross-linking degree of the finally formed film due to the condensation of some tiny droplets into small droplets and / or large droplets exceeding the micron level, thereby effectively improving the film forming quality of the atmospheric pressure plasma coating process.

[0044] In a second aspect, the present application further provides a plasma enhanced chemical vapor deposition device, which includes the plasma jet nozzle provided in the first aspect above.

[0045] An embodiment of the present application provides a plasma enhanced chemical vapor deposition device, which includes the plasma jet nozzle provided by the first aspect above. The principle of the plasma enhanced chemical vapor deposition device provided by this embodiment is the same as the principle of the plasma jet nozzle provided by the first aspect above, and will not be discussed in detail here.

[0046] As can be seen from the above, the plasma jet nozzle and plasma enhanced chemical vapor deposition equipment provided by the present application can guide the plasma entering the reaction chamber 3 to rotate around the precursor ejection pipe 5 by utilizing the first spiral airflow guiding structure 6, so as to heat and atomize the precursor material by means of heat conduction of the plasma, thereby avoiding the situation in which the tiny droplets in the atomized precursor material condense into small droplets and / or large droplets exceeding the micron level during the propagation process. Since there are no small droplets and / or large droplets exceeding the micron level in the precursor material of the present application, and the present application can achieve the above-mentioned effect by making the plasma The method of rotating the atomized precursor material sprayed from the precursor body increases the contact time between the plasma and the atomized precursor material, and the present application can accelerate the molecular movement and collision by heating the precursor material to enhance the activity of the molecules, that is, the present application can fully activate and excite the atomized precursor material. Therefore, the present application can effectively solve the problem of insufficient reaction of the precursor material on the substrate surface and low cross-linking degree of the finally formed film due to the condensation of some tiny droplets into small droplets and / or large droplets exceeding the micron level, thereby effectively improving the film forming quality of the atmospheric pressure plasma coating process.

[0047] In the embodiments provided in the present application, it should be understood that, herein, relational terms such as first and second, etc. are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0048] The above description is only an embodiment of the present application and is not intended to limit the protection scope of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A plasma jet nozzle, characterized in that: The plasma jet nozzle comprises: The nozzle body comprises a plasma excitation chamber and a reaction chamber, the side wall of the reaction chamber is provided with an air inlet connected to the output end of the plasma excitation chamber, the bottom of the reaction chamber is connected to the outlet of the nozzle body, and the plasma excitation chamber is used to output plasma; A precursor ejection pipe, located in the reaction chamber, with a bottom height less than the air inlet height, for ejecting atomized precursor materials; The first spiral airflow guiding structure is sleeved outside the precursor ejection pipe and installed in the reaction chamber, and comprises a first circular mounting plate and a plurality of baffles. The plurality of baffles are arranged in a circular array on the first circular mounting plate, the height of the top of the baffle is greater than the height of the air inlet, the height of the bottom of the baffle is less than the height of the air inlet and greater than the height of the bottom of the precursor ejection pipe, the plate surface of the baffle is parallel to the axis of the precursor ejection pipe, and one side of the baffle is inclined toward the axis of the precursor ejection pipe.

2. The plasma jet nozzle according to claim 1, characterized in that: The plasma jet nozzle also includes a second spiral airflow guide structure, which is installed on the nozzle body and located at the input end of the plasma excitation chamber. The second spiral airflow guide structure includes a second circular mounting plate and a plurality of inclined through holes. An ionization component is installed at the center of the second circular mounting plate. The plurality of inclined through holes are arranged in a circular array on the second circular mounting plate. The input end of the inclined through hole is connected to the gas supply component, and the output ends of the plurality of inclined through holes are all located in the plasma excitation chamber.

3. The plasma jet nozzle according to claim 2, characterized in that: The number of the inclined through holes is 6-10.

4. The plasma jet nozzle according to claim 2, characterized in that: The outer side wall of the second annular mounting plate is provided with a first limiting block, and the first limiting block can abut against the nozzle body.

5. The plasma jet nozzle according to claim 1, characterized in that: The output end of the plasma excitation chamber is connected to the air inlet of the reaction chamber through a Laval nozzle and an output pipe, and the output pipe is inclined downward.

6. The plasma jet nozzle according to claim 1, characterized in that: The plasma excitation chamber is contracted toward the reaction chamber.

7. The plasma jet nozzle according to claim 1, characterized in that: The spiral axis of the plasma passing through the first spiral gas flow guiding structure coincides with the axis of the precursor ejection pipe.

8. The plasma jet nozzle according to claim 1, characterized in that: The outer side wall of the first annular mounting plate is provided with a second limiting block, the side wall of the reaction chamber has a groove that fits with the second limiting block, and the second limiting block can abut against the bottom of the groove.

9. The plasma jet nozzle according to claim 1, characterized in that: The number of the baffles is 2-4.

10. A plasma enhanced chemical vapor deposition device, characterized in that: The plasma enhanced chemical vapor deposition equipment comprises the plasma jet nozzle as described in any one of claims 1-9.

Images