Method for preparing high-conductivity and high-toughness carbon nanotube fiber through vacuum sealing and two-phase region normal-pressure ferric trichloride nondestructive doping

Through vacuum sealing and non-destructive ferric chloride doping technology in both phase zones, high conductivity and high toughness of carbon nanotube fibers are achieved, solving the problem of degradation of existing fiber performance and meeting the application needs of high-performance fibers in military industry, national defense, aerospace and other fields.

CN119571606AActive Publication Date: 2025-03-07INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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Patent Information

Application Number
CN202411600572.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-11
Publication Date
2025-03-07
Estimated Expiration
2044-11-11

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Abstract

The invention relates to the field of preparation of high-performance carbon nanotube fibers, in particular to a method for preparing high-conductivity and high-toughness carbon nanotube fibers through vacuum sealing and two-phase region normal-pressure ferric trichloride nondestructive doping. Carbon nano tube fibers are used as raw materials, and a normal-pressure double-phase region heating method is adopted, so that controllable doping of ferric trichloride molecules among carbon nano tubes and in tube cavities is realized on the premise that intrinsic structures of the carbon nano tubes are not damaged; through surface charge transfer between ferric trichloride molecules and the carbon nanotubes and the action of the ferric trichloride molecules and the tube walls of the carbon nanotubes, the electrical and mechanical properties of the carbon nanotube fibers are greatly improved. According to the method, stable and controllable doping of ferric trichloride is realized while the structural integrity of the carbon nanotubes is maintained, the electrical and mechanical properties of the carbon nanotube fibers are improved, and the method is expected to be applied to the fields of wearable electronic equipment, aerospace and the like.
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