Multi-channel wavelength division multiplexing transmitting chip and preparation method thereof

Abstract

The invention provides a multichannel wavelength division multiplexing transmitting chip which can be applied to the technical field of microwave photonic integrated chips. The chip comprises a substrate, an array laser chip, an array modulator chip, a wavelength division multiplexing chip and a photon lead bonding structure, and the array laser chip, the array modulator chip and the wavelength division multiplexing chip are located on the substrate and located on the same side of the substrate; and the array laser chip, the array modulator chip and the wavelength division multiplexing chip are connected through photon lead bonding structures. Main devices in the microwave photonic system are integrated into a whole through the substrate and the photonic lead bonding structure, the monolithic integrated microwave photonic system is achieved, and the microwave photonic system has the advantages of being small in size, high in integration degree and high in reliability. The invention further provides a preparation method of the multi-channel wavelength division multiplexing transmitting chip.

Description

Technical Field

[0001] The present disclosure relates to the technical field of microwave photonic integrated chips, and in particular to a multi-channel wavelength division multiplexing transmitting chip and a preparation method thereof. Background Art

[0002] Traditional multi-channel wavelength division multiplexing transmission systems are often composed of discrete devices. Discrete optical fiber components are sensitive to external disturbances, which will cause system functions to deteriorate and take up a lot of space. Therefore, the existing microwave photonic technology is developing towards integration by integrating with photonic integration technology. Compared with traditional microwave photonic systems, integrated microwave photonic systems can significantly reduce system size, weight and power consumption, and greatly improve system performance.

[0003] The long-term goal of integrated microwave photonics is to realize chip-level microsystems, integrating all required active and passive optoelectronic components into the same substrate through monolithic integration or hybrid integration. 3 N 4 ) and silicon on insulator (SOI). Among them, the InP material platform can realize the overall integration of active and passive devices, but it has large waveguide loss and RF crosstalk; Si 3 N 4 It has ultra-low loss passive waveguides, but cannot integrate active devices such as lasers, modulators and detectors; SOI has medium-low loss for passive waveguides, and can integrate modulators and photodetectors through doping and epitaxial growth of germanium on Si, but the lack of laser sources on silicon substrates makes it impossible to achieve fully integrated SOI chips. Other integrated photonic materials such as chalcogenides and lithium niobate also face such problems in high-level integration. In general, there is currently no material that can independently make all components of an integrated microwave photonic system perform well. Summary of the invention

[0004] 1. Technical issues to be resolved

[0005] In order to solve the technical problems existing in the multi-channel wavelength division multiplexing transmitting chip in the prior art, the embodiments of the present disclosure provide a multi-channel wavelength division multiplexing transmitting chip based on photon wire bonding and a preparation method thereof, which integrates the main components in the microwave photonic system into a whole through the substrate and the photon wire bonding structure, thereby realizing a monolithic integrated microwave photonic system, which has the advantages of small size, high integration and high reliability. Compared with the traditional multi-channel wavelength division multiplexing transmitting system, this highly integrated multi-channel transmitting chip avoids the interconnection between optical fibers, greatly reduces the volume of the system, and improves reliability. Compared with the monolithic integration of a single material platform, this transmitting chip based on photon wire bonding can combine the advantages of each material platform to improve the performance of the multi-channel wavelength division multiplexing transmitting chip.

[0006] (II) Technical solution

[0007] In view of the above problems, embodiments of the present disclosure provide a multi-channel wavelength division multiplexing transmission chip and a method for manufacturing the same.

[0008] According to a first aspect of the present disclosure, a multi-channel wavelength division multiplexing transmitting chip is provided, comprising: a substrate, an array laser chip, an array modulator chip, a wavelength division multiplexing chip and a photon wire bonding structure, wherein the array laser chip, the array modulator chip and the wavelength division multiplexing chip are located on the substrate and on the same side of the substrate; and the array laser chip, the array modulator chip and the wavelength division multiplexing chip are connected by the photon wire bonding structure.

[0009] In some exemplary embodiments, the material of the substrate includes one of silicon, metal, and cover glass.

[0010] In some exemplary embodiments, the material of the material platform of the array laser chip includes one of indium phosphide, indium gallium arsenide, and indium gallium arsenic phosphide.

[0011] In some exemplary embodiments, the material of the material platform of the array modulator chip includes thin-film lithium niobate on insulator.

[0012] In some exemplary embodiments, the material of the material platform of the wavelength division multiplexing chip includes one of silicon on insulator, silicon nitride and silicon carbide.

[0013] In some exemplary embodiments, the material of the photonic wire bonding structure includes a photoresist material.

[0014] According to the first aspect of the present disclosure, a method for preparing a multi-channel wavelength division multiplexing transmitting chip is provided, comprising the following steps: preparing an array laser chip, an array modulator chip and a wavelength division multiplexing chip; fixing the array laser chip, the array modulator chip and the wavelength division multiplexing chip at intervals on the same side of a substrate; depositing photoresist in the gap between two adjacent chips; and exposing the photoresist by a laser beam to obtain a photon wire bonding structure.

[0015] In some exemplary embodiments, array laser chips, array modulator chips, and wavelength division multiplexing chips are prepared, including: obtaining a first material platform, epitaxially growing an epitaxial layer structure required for the array laser chip on the first material platform, and etching the array laser chip on the epitaxial layer structure; obtaining a second material platform, preparing an array modulator chip on the second material platform; and obtaining a third material platform, etching a wavelength division multiplexing chip having a waveguide structure on the third material platform.

[0016] In some exemplary embodiments, the material of the first material platform includes one of indium phosphide, indium gallium arsenide, and indium gallium arsenic phosphide; and / or the material of the second material platform includes thin film lithium niobate on an insulator; and / or the material of the third material platform includes one of silicon on an insulator, silicon nitride, and silicon carbide.

[0017] In some exemplary embodiments, the material of the substrate includes one of silicon, metal, and cover glass.

[0018] (III) Beneficial effects

[0019] It can be seen from the above technical solutions that the multi-channel wavelength division multiplexing transmission chip and the preparation method thereof provided by the embodiments of the present disclosure have at least one of the following beneficial effects:

[0020] (1) Through photonic wire bonding technology, the complex multi-channel wavelength division multiplexing transmission system is fully integrated on the chip, so that each chip can balance the advantages and disadvantages of each material platform and select the material platform of the optical components to achieve a small size, high performance, full-chip integrated multi-channel wavelength division multiplexing transmission chip.

[0021] (2) Compared with the traditional multi-channel wavelength division multiplexing transmission system, this highly integrated multi-channel transmission chip avoids the interconnection between optical fibers, greatly reduces the size of the system, and improves reliability.

[0022] (3) Compared with monolithic integration of a single material platform, this transmitter chip based on photonic wire bonding can combine the advantages of various material platforms to improve the performance of multi-channel wavelength division multiplexing transmitter chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The above contents and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0024] Figure 1 A schematic diagram of the structure of a multi-channel wavelength division multiplexing transmission chip according to an embodiment of the present disclosure is shown; and

[0025] Figure 2 The flowchart of a method for preparing a multi-channel wavelength division multiplexing transmitting chip according to an embodiment of the present disclosure is schematically shown.

[0026] Reference numerals:

[0027] 1-substrate; 2-array laser chip; 3-array modulator chip; 4-wavelength division multiplexing chip; 5-photon wire bonding structure. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solutions and advantages of the present disclosure more clearly understood, the present disclosure is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present disclosure.

[0029] Figure 1 The schematic diagram shows the structure of a multi-channel wavelength division multiplexing transmission chip according to an embodiment of the present disclosure.

[0030] like Figure 1 As shown, a multi-channel wavelength division multiplexing transmitting chip according to an embodiment of the present disclosure includes: a substrate 1, an array laser chip 2, an array modulator chip 3, a wavelength division multiplexing chip 4 and a photon wire bonding structure 5, wherein the array laser chip 2, the array modulator chip 3, and the wavelength division multiplexing chip 4 are located on the substrate and on the same side of the substrate 1; and the array laser chip 2, the array modulator chip 3, and the wavelength division multiplexing chip 4 are connected by the photon wire bonding structure 5. The main components in the microwave photonic system are integrated into a whole through the substrate 1 and the photon wire bonding structure 5, realizing a monolithic integrated microwave photonic system, which has the advantages of small size, high integration and high reliability.

[0031] Optionally, the material of the substrate 1 includes one of silicon, metal and cover glass.

[0032] Optionally, the material of the material platform of the array laser chip 2 includes one of indium phosphide, indium gallium arsenide and indium gallium arsenic phosphide.

[0033] Optionally, the material of the material platform of the array modulator chip 3 includes thin-film lithium niobate on insulator.

[0034] Optionally, the material of the material platform of the wavelength division multiplexing chip 4 includes one of silicon on insulator, silicon nitride and silicon carbide.

[0035] Optionally, the material of the photon wire bonding structure 5 includes a photoresist material.

[0036] The disclosed embodiments integrate various functional devices together through the photon wire bonding technology and the advantages of various platforms. Compared with the traditional multi-channel wavelength division multiplexing transmission system, this highly integrated multi-channel transmission chip avoids the interconnection between optical fibers, greatly reduces the volume of the system, and improves reliability. Compared with the monolithic integration of a single material platform, this transmission chip based on photon wire bonding can combine the advantages of various material platforms to improve the performance of the multi-channel wavelength division multiplexing transmission chip.

[0037] Figure 2 The flowchart of a method for preparing a multi-channel wavelength division multiplexing transmitting chip according to an embodiment of the present disclosure is schematically shown.

[0038] like Figure 2 As shown, according to an embodiment of the present disclosure, a method for preparing a multi-channel wavelength division multiplexing transmitting chip includes steps S110-S140.

[0039] In step S110 , the array laser chip 2 , the array modulator chip 3 , and the wavelength division multiplexing chip 4 are prepared.

[0040] In some exemplary embodiments, step S110 includes: obtaining a first material platform, epitaxially growing an epitaxial layer structure required for the array laser chip 2 on the first material platform, and etching the array laser chip 2 on the epitaxial layer structure; obtaining a second material platform, preparing an array modulator chip 3 on the second material platform; and obtaining a third material platform, etching a wavelength division multiplexing chip 4 with a waveguide structure on the third material platform.

[0041] Optionally, the material of the first material platform includes one of indium phosphide, indium gallium arsenide and indium gallium arsenide phosphide; and / or the material of the second material platform includes thin-film lithium niobate on insulator; and / or the material of the third material platform includes one of silicon on insulator, silicon nitride and silicon carbide. The material of the substrate 1 includes one of silicon, metal and cover glass.

[0042] For example, an indium phosphide substrate is provided as a material platform for the array laser chip 2, an InGaAsP device structure is reversely epitaxially grown on the indium phosphide substrate, and the array laser chip 2 is etched on the epitaxial layer structure. A lithium niobate on an insulator is provided as a material platform for the array modulator chip 3, and an array thin-film lithium niobate-based electro-optic modulator is prepared on the lithium niobate on an insulator. A silicon wafer is provided as a material platform for the wavelength division multiplexing chip 4, a small piece of SOI chip is cleaved from the silicon wafer, and a silicon-based wavelength division multiplexing chip 4 with a wavelength division multiplexing structure is etched using electron beam exposure.

[0043] In step S120 , the array laser chip 2 , the array modulator chip 3 , and the wavelength division multiplexing chip 4 are fixed at intervals on the same side of the substrate 1 .

[0044] In step S130 , photoresist is deposited in a gap between two adjacent chips.

[0045] In step S140 , the photoresist is exposed by a laser beam to obtain a photon wire bonding structure 5 .

[0046] For example, a metal base is provided, and the array laser chip 2, the array modulator chip 3, and the wavelength division multiplexing chip 4 are fixed on the substrate 1, and photoresist is deposited in the interconnection area between the chips. The actual position of the photolithography surface of each chip and the coupling structure in the photoresist is detected using 3D machine vision technology. The laser beam is incident on the photoresist to produce a two-photon polymerization effect with the photoresist, and finally the unexposed photoresist is removed to obtain the expected photon wire bonding structure 5.

[0047] The embodiments of the present disclosure are described above. However, these embodiments are only for illustrative purposes and are not intended to limit the scope of the present disclosure. Although the embodiments are described above, this does not mean that the measures in the various embodiments cannot be used in combination to advantage. Without departing from the scope of the present disclosure, those skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A multi-channel wavelength division multiplexing transmission chip, characterized in that: include: Substrate, array laser chip, array modulator chip, wavelength division multiplexing chip and photon wire bonding structure, Wherein, the array laser chip, the array modulator chip, and the wavelength division multiplexing chip are located on the substrate and on the same side of the substrate; and The array laser chip, the array modulator chip and the wavelength division multiplexing chip are connected through a photon wire bonding structure.

2. The multi-channel wavelength division multiplexing transmitting chip according to claim 1, characterized in that: The material of the substrate includes one of silicon, metal and cover glass.

3. The multi-channel wavelength division multiplexing transmitting chip according to claim 1, characterized in that: The material of the material platform of the array laser chip includes one of indium phosphide, indium gallium arsenide and indium gallium arsenide phosphide.

4. The multi-channel wavelength division multiplexing transmitting chip according to claim 1, characterized in that: The material platform of the array modulator chip includes a thin film of lithium niobate on an insulator.

5. The multi-channel wavelength division multiplexing transmitting chip according to claim 1, characterized in that: The material of the material platform of the wavelength division multiplexing chip includes one of silicon on insulator, silicon nitride and silicon carbide.

6. The multi-channel wavelength division multiplexing transmitting chip according to claim 1, characterized in that: The material of the photon wire bonding structure includes photoresist material.

7. A method for preparing a multi-channel wavelength division multiplexing transmitting chip, characterized in that: The following steps are involved: Prepare array laser chips, array modulator chips and wavelength division multiplexing chips; The array laser chip, the array modulator chip and the wavelength division multiplexing chip are fixed at intervals on the same side of the substrate; Depositing photoresist in the gap between two adjacent chips; as well as The photoresist is exposed by laser beam to obtain a photon wire bonding structure.

8. The method according to claim 7, characterized in that The method for preparing the array laser chip, the array modulator chip and the wavelength division multiplexing chip comprises: Obtaining a first material platform, epitaxially growing an epitaxial layer structure required for an array laser chip on the first material platform, and etching the array laser chip on the epitaxial layer structure; obtaining a second material platform, and preparing an array modulator chip on the second material platform; and A third material platform is obtained, and a wavelength division multiplexing chip having a waveguide structure is etched on the third material platform.

9. The method according to claim 8, characterized in that The material of the first material platform includes one of indium phosphide, indium gallium arsenide and indium gallium arsenide phosphide; and / or The material of the second material platform includes thin-film lithium niobate on an insulator; and / or The material of the third material platform includes one of silicon on insulator, silicon nitride and silicon carbide.

10. The method according to claim 7, characterized in that The material of the substrate includes one of silicon, metal and cover glass.

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