Integrated drive control power semiconductor module and control device

Abstract

The invention provides an integrated drive control power semiconductor module and a control device. The power semiconductor module comprises a module shell and a module substrate, the power unit comprises a first substrate arranged on the module substrate, and a power device and a terminal which are arranged on the first substrate; the control unit comprises a second substrate, and a driving circuit and a control interface circuit which are arranged on the second substrate; the control interface circuit is used for generating a control signal for controlling the driving circuit based on the control instruction and the sampling signal; the driving circuit performs modulation processing based on the control signal to generate a driving signal to drive the power unit, and the power unit controls operation of the load based on the driving signal; the power unit and the control unit are packaged in an internal space formed by the module shell and the module substrate, the power unit, the control unit and the terminal are electrically connected through bonding wires, and the terminal extends to the outside of the module shell from the first substrate. The design of a power product is simplified, and the integration level and the power density are improved.

Description

Technical Field

[0001] The present disclosure relates to the field of power semiconductors, and in particular to a power semiconductor module and a control device with integrated drive control. Background Art

[0002] The existing power device modules only encapsulate the power device itself, and still have problems such as low integration, large size, and low power density. Summary of the invention

[0003] The present disclosure proposes a semiconductor power module and a control device with integrated drive control, so as to solve the technical problems of the above-mentioned traditional power modules such as low integration, large volume, and low power density to a certain extent.

[0004] In a first aspect of the present disclosure, there is provided a semiconductor power module with integrated drive control, comprising:

[0005] Module housing and module substrate;

[0006] A power unit, comprising a first substrate disposed on the module substrate, and a power device and a terminal disposed on the first substrate;

[0007] A control unit, arranged on the power unit, comprising a second substrate, and a driving circuit and a control interface circuit arranged on the second substrate; wherein the second substrate is arranged on the first substrate through a support member, and the power device is located in a space formed by the first substrate, the second substrate and the support member;

[0008] The control interface circuit is used to receive a sampling signal of a load and a given control instruction, and generate a control signal for controlling the drive circuit based on the control instruction and the sampling signal;

[0009] The driving circuit performs modulation processing based on the control signal to generate a driving signal to drive the power unit, and the power unit controls the operation of the load based on the driving signal;

[0010] The power unit and the control unit are encapsulated in an internal space formed by the module housing and the module substrate. The power unit, the control unit and the terminals are electrically connected via bonding wires. The terminals extend from the first substrate to the outside of the module housing.

[0011] A second aspect of the present disclosure provides a control device, comprising the power semiconductor module as described in the first aspect of the present disclosure and a corresponding peripheral circuit.

[0012] As can be seen from the above, the present disclosure provides a power semiconductor module and control device with integrated drive control, which adopts hybrid packaging technology to integrate traditional power device modules and servo control / drive circuits, wherein the power unit includes a power device and a terminal arranged on a first substrate, and the control unit is stacked on the power unit, including a drive circuit, a control interface circuit and an auxiliary power supply on a second substrate. The second substrate is arranged on the first substrate through a support member to form a closed space, which wraps the power unit. The power unit and the control unit are electrically connected via bonding wires, the control interface circuit receives the sampling signal and control instruction of the load, generates a control signal to modulate the drive circuit, and then generates a drive signal to control the power module, and the auxiliary power supply supplies power to the control interface circuit. The entire system is encapsulated in the internal space formed by the module housing and the module substrate, and the terminal extends from the first substrate to the outside of the module housing. The integration and power density of the traditional semiconductor power module are greatly improved, the design and development difficulty are simplified, and the performance and reliability of the system are enhanced. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions in the present disclosure or related technologies, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, the drawings described below are only embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0014] Figure 1 is a schematic diagram of a power semiconductor module according to an embodiment of the present disclosure.

[0015] Figure 2 Schematic diagram of a top view of a power semiconductor module according to an embodiment of the present disclosure.

[0016] Figure 3 Schematic diagram of a control device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0017] In order to make the objectives, technical solutions and advantages of the present disclosure more clearly understood, the present disclosure is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0018] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the embodiments of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Including" or "comprising" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0019] Traditional servo drives are generally composed of a control board formed by a control component and a power board formed by a power component. This separate design leads to the problem of low integration, which is manifested in the dispersion of components, signal transmission relying on connectors or wiring, and increasing the fault points and maintenance difficulty. In addition, this design also brings the problem of large volume, which makes the servo drive subject to space restrictions during installation, especially in compact environments such as robot joints and small machine tools. The application is restricted, and the weight and heat dissipation complexity are increased. Low power density is also a significant disadvantage of the prior art. Due to insufficient power density, the servo drive cannot provide sufficient power output in the same volume, resulting in low efficiency and increased energy consumption. In addition, in order to handle the same amount of heat, a more complex heat dissipation design is required. Although there are currently servo drives with a single board that can improve the integration to a certain extent, and combine control components and power components, and integrate strong and weak electricity on the same circuit board. However, this design has higher requirements for the division of strong and weak electricity areas and the technology of electromagnetic radiation control. At the same time, the existing power device module only encapsulates the power device itself, so both the traditional servo controller and the single board servo drive still have problems such as low integration, large volume, and low power density. Therefore, how to improve the integration of power device modules and corresponding control devices, reduce their size, and increase their power density to meet the application requirements of high performance, miniaturization, and high reliability has become a technical problem that needs to be solved urgently.

[0020] In view of this, the embodiment of the present disclosure provides a power semiconductor module and control device with integrated drive control, which adopts hybrid packaging technology to integrate the traditional power device module and servo control / drive circuit, wherein the power unit includes a power device and a terminal arranged on a first substrate, and the control unit is stacked on the power unit, including a drive circuit, a control interface circuit and an auxiliary power supply on a second substrate. The second substrate is arranged on the first substrate through a support member to form a closed space, which wraps the power unit. The power unit and the control unit are electrically connected via bonding wires, the control interface circuit receives the sampling signal and control instruction of the load, generates a control signal to modulate the drive circuit, and then generates a drive signal to control the power module, and the auxiliary power supply supplies power to the control interface circuit. The entire system is encapsulated in the internal space formed by the module housing and the module substrate, and the terminal extends from the first substrate to the outside of the module housing. The integration and power density of the traditional semiconductor power module are greatly improved, the difficulty of design and development is simplified, and the performance and reliability of the system are enhanced.

[0021] See also Figure 1 , Figure 1 A schematic diagram of a power semiconductor module with integrated drive control according to an embodiment of the present disclosure is shown. Figure 1 In the embodiment, the power semiconductor module 100 comprises:

[0022] A module housing 110 and a module substrate 120;

[0023] The power unit 130 includes a first substrate 131 disposed on the module substrate 120 , and a power device 132 and a terminal 133 disposed on the first substrate 131 ;

[0024] The control unit 140 is arranged on the power unit 130, and includes a second substrate 141, and a driving circuit 142 and a control interface circuit 143 arranged on the second substrate 141; wherein the second substrate 141 is arranged on the first substrate 131 through a support member 150, and the power device 132 is located in a space formed by the first substrate 131, the second substrate 141 and the support member 150;

[0025] The control interface circuit 143 is used to receive a sampling signal of a load and a given control instruction, and generate a control signal for controlling the driving circuit based on the control instruction and the sampling signal;

[0026] The driving circuit 142 performs modulation processing based on the control signal to generate a driving signal to drive the power unit 130, and the power unit 130 controls the operation of the load based on the driving signal;

[0027] The power unit 130 and the control unit 140 are encapsulated in an internal space formed by the module housing 110 and the module substrate 120 , the first substrate 131 , the second substrate 141 are electrically connected to the terminal 133 , and the terminal 133 extends from the first substrate 131 to the outside of the module housing 110 .

[0028] Among them, the load can be at least one motor. The power unit can play a driving role in signal and current amplification to control the operation of the motor. The power unit includes a rectifier part and / or an inverter part formed by a power switch device and a fast recovery diode (FRD). The power switch device may include IGBT, MOSFET, GAN, SIC MOSFET, etc. In large current output occasions, the current mainstream servo drive solution still mainly uses IGBT modules. The power unit can use a plastic shell package to integrate components such as IGBT, FRD and thermocouples, and use hybrid packaging technology to integrate the power switch and logic control hardware of the servo drive into the power unit package. This method can improve the performance and reliability of the servo drive, increase the power density, greatly simplify the design and development difficulty of the servo drive, and achieve high reliability and high robustness of the module design.

[0029] The power semiconductor module disclosed in the present invention integrates multiple power devices and their control / drive circuit devices into a chip form through bonding wires. Compared with ordinary circuit board stacking packages, it has the advantages of better signal integrity, heat dissipation performance, small size, high reliability, simple manufacturing and testing, and design flexibility. These advantages make this solution particularly suitable for high-performance computing, portable electronic devices and high-density integrated systems.

[0030] Specifically, the traditional method of circuit board stacking packaging refers to connecting multiple printed circuit boards (PCBs) together by physically stacking them to form a multi-layer structure. These circuit boards are usually electrically connected through connectors, slots or solder points to achieve signal transmission and power supply. Each circuit board can act as an independent module, resulting in the need for signals to be transmitted between circuit boards through a longer path, which may affect signal integrity and performance. Multi-layer stacking may cause heat accumulation, and the heat dissipation design is more complicated.

[0031] Compared with the traditional multi-layer circuit board stacking, the power semiconductor module disclosed in the present invention stacks each device into a chip form through bonding wires, that is, each device is integrated into the same semiconductor chip, and the interconnection between devices is realized through bonding wires to form a highly integrated packaging structure. This not only shortens the signal transmission path between devices, reduces signal attenuation and noise interference, and improves signal integrity, but also means lower signal delay and improves the response speed of the system. In addition, the devices inside the chip can be evenly distributed, reducing heat accumulation, avoiding local overheating, and extending the service life. The devices are highly integrated into a single chip, greatly reducing the overall volume. Compared with the traditional multi-layer circuit board stacking, the power semiconductor module disclosed in the present invention also reduces the number of connection points and reduces the problems caused by connection point failures.

[0032] In some embodiments, the terminal comprises:

[0033] An encoder terminal, for receiving an encoding signal regarding a rotation speed and / or a position of a load;

[0034] A network terminal, used for communicating with the outside via a network;

[0035] A current sampling terminal, used to receive a current sampling signal of the load;

[0036] And, the control interface circuit includes a processing unit and a programmable logic unit;

[0037] The programmable logic unit is connected to the encoder terminal and the network terminal via bonding wires, and is used to receive the encoding signal and / or a given control instruction from the outside;

[0038] The processing unit is connected to the current sampling terminal via a bonding wire to receive the current sampling signal; and the first data interface of the processing unit is connected to the second data interface of the programmable logic unit via a bonding wire to receive the control instruction and / or the encoding signal.

[0039] Among them, the programmable logic unit is responsible for processing data from different sources and communicating with the processing unit through the first data interface. The processing unit implements software algorithms for load control, including but not limited to current control, speed control and position control. The terminals may include encoder terminals, network terminals, and current sampling terminals. The drive circuit mainly realizes the amplification of the switch drive signal of the power device and completes the power conversion. The control unit substrate and the power unit substrate are connected through bonding wires to realize the interconnection of circuit signals and complete the function of controlling the operation of the load. The bonding wire (Bonding Wire) can be used in semiconductor packaging technology to establish an electrical connection between the integrated circuit chip and the packaging substrate or pin. The bonding wire can connect the pad on the chip with the external pin or other circuit to realize the transmission of signals and power. The bonding wire can be made of metal materials such as gold, silver, copper, and aluminum. The bonding wire is bonded to the pad by heating and applying pressure (i.e., hot pressing bonding), or ultrasonic vibration is used to generate friction heat to form a metallurgical bond between the bonding wire and the pad (i.e., ultrasonic bonding).

[0040] Specifically, the programmable logic unit can receive the coded signal from the load end via the encoder terminal, and these signals are used to measure the speed and / or position of the load so as to accurately control it according to the actual movement situation. The second data interface of the programmable logic unit can be used to perform bidirectional data exchange with the first data interface of the processing unit, and transmit the information obtained from the encoder port and the data obtained from other terminals, including but not limited to sampling signals and control instructions. . The network terminal can support communication based on a specific network protocol (such as Ethernet / IP, Profinet, etc.), so that the power semiconductor module can interact with external devices (such as PLC, HMI, etc.) through the network to achieve remote monitoring and control. The current sampling terminal is used to receive the current sampling signal of the load, which can be used to monitor the working state of the load and adjust the control strategy accordingly. The sampling signal can be a current sampling signal or an encoding signal provided by the encoder, or a combination of the two. In this way, the control interface circuit can comprehensively process multiple types of input signals, analyze and process them through the processing unit, and finally generate a control signal to adjust the drive circuit, thereby achieving effective control of the load. This design not only improves the intelligence level of the power semiconductor module, but also enhances the flexibility and adaptability of the power semiconductor module.

[0041] In some embodiments, the control instruction includes at least one of a current reference signal, a position reference signal, and a speed reference signal of the load;

[0042] Then generating a control signal for controlling the driving circuit based on the control instruction and the sampling signal includes:

[0043] generating the control signal based on a current error between the current reference signal and the current sampling signal;

[0044] Alternatively, determining an actual position signal based on the coded signal; generating the control signal based on a first difference between the position reference signal and the actual position signal;

[0045] Alternatively, an actual rotation speed signal is determined based on the encoding signal; and the control signal is generated based on a second difference between the rotation speed reference signal and the actual rotation speed signal.

[0046] Wherein, the control instruction includes at least one of a current reference signal, a position reference signal and a speed reference signal of the load. When the control instruction includes a current reference signal of the load, the control system generates a control signal based on a current error between the current reference signal and an actual current sampling signal obtained from the motor. This means that the control system compares the current reference signal with the actual current sampling signal, calculates the difference between the two, i.e., the current error, and generates a control signal based on the error to adjust the working state of the drive circuit so that the actual current is close to the reference value. If the control instruction includes a position reference signal, the control system determines the actual position signal based on the encoding signal. The control system calculates the first difference between the position reference signal and the actual position signal, i.e., the position error. Then, the control system generates a control signal based on the position error to adjust the position of the motor so that it tends to the reference position. When the control instruction includes a speed reference signal, the control system determines the actual speed signal based on the encoding signal. The control system then calculates the second difference between the speed reference signal and the actual speed signal, i.e., the speed error. Finally, the control system generates a control signal based on the speed error, which can adjust the speed of the motor to be close to a given reference speed. Through these control strategies, the servo control system can dynamically adjust the behavior of the motor according to the difference between different reference signals and actual measured values ​​to ensure that the motor runs according to the predetermined target current, target position and target speed. It can be combined with PID (proportional-integral-differential) control algorithm or other control strategies to achieve precise closed-loop control, without limitation here.

[0047] In some embodiments, the power unit 130 further includes:

[0048] The diode device 134 is electrically connected to the power device via bonding wires and is disposed on the first metal layer of the first substrate, so as to prevent the bridge arm formed by the power device from being directly connected.

[0049] Among them, the diode device can be an FRD (Fast Recovery Diode). The fast recovery diode can restore its blocking ability more quickly when reverse biased, and can switch from the on state to the off state in a shorter time. Compared with ordinary rectifier diodes, the FRD generates a smaller current during reverse recovery, which means that the loss generated during the switching process is also smaller, which can significantly improve the efficiency and reliability of the power electronic system. In the power unit, the FRD is mainly used to prevent the shoot-through phenomenon of the inverter bridge arm (that is, the upper and lower switches of the same bridge arm are turned on at the same time), and to provide a path for energy release for the inductive load after the switch is disconnected.

[0050] In some embodiments, the power unit 130 further includes:

[0051] A thermal protection device 135, disposed on the first metal layer and connected to the processing unit via bonding wires, for detecting the internal temperature of the power unit;

[0052] The processing unit is connected to the overheat protection terminal via a bonding wire, and is further configured to output an overheat protection signal via the overheat protection terminal when the internal temperature is higher than a temperature threshold.

[0053] Among them, the thermal protection device can be a thermocouple, which detects temperature changes through the thermoelectric effect, can be used to monitor the temperature inside the module, and trigger a protection mechanism when the temperature exceeds a safety threshold to prevent damage caused by overheating. Thermocouples can be usually installed in designated locations, such as near a power switch or on a heat sink, to monitor the temperature of these areas in real time. The voltage signal output by the thermocouple is usually very small, and can be processed by a signal conditioning circuit (such as an amplifier, a filter, etc.), and then converted by an analog-to-digital converter (ADC) into a digital signal for the control unit to read and analyze. Once it is detected that the temperature exceeds a preset safety threshold, the processing unit of the control unit triggers the corresponding thermal protection operation, such as: Current limiting: reducing the current output of the power device to reduce heat generation. Shutdown: temporarily shutting down the power device until the temperature drops to a safe range. Alarm: sending a warning signal to the operator through an indicator light or other means. Active heat dissipation: starting an active heat dissipation device such as a fan or pump to accelerate heat dissipation.

[0054] In some embodiments, the terminal is disposed on the first substrate through a second metal layer, and the power device, the second substrate and the second metal layer are electrically connected through bonding wires.

[0055] Among them, the terminals of the power semiconductor module are arranged on the first substrate through the second metal layer to ensure reliable connection between the terminals and the internal circuit. The power device, the second substrate and the second metal layer are electrically connected through bonding wires to achieve efficient and reliable electrical connection. This not only improves the integration and reliability of the module, but also enhances its adaptability and flexibility in various application scenarios. In this way, the module can better cope with the requirements of high power density, miniaturization and high reliability.

[0056] In some embodiments, the first substrate includes a base solder layer, a third metal layer and an insulating layer stacked from bottom to top; the first metal layer and the second metal layer are arranged on one side of the insulating layer, and the third metal layer is arranged on the other side of the insulating layer.

[0057] Among them, such a structural design enables the first substrate to have good electrical isolation performance and thermal conductivity, and can effectively distribute and manage the current path. The base solder layer provides a welding interface between the substrate and other components, ensuring the reliability of the electrical connection; the third metal layer (usually used as a heat dissipation layer) can quickly conduct heat away from the power device to improve the heat dissipation efficiency; and the insulating layer plays an electrical isolation role to prevent current short circuit. The first metal layer and the second metal layer can be used to arrange circuit routing and other electrical components, optimize signal transmission paths and power distribution. Through this multi-level structural design, the first substrate can not only support high-density circuit layout, but also improve the overall reliability and performance of the system. Specifically, the first substrate can be a DBC (Direct Bonded Copper) substrate, which can form a composite material with good thermal conductivity by directly bonding copper foil to a ceramic substrate. DBC substrates are often used in high-temperature and high-power application environments, such as automotive electronics, industrial drives, solar inverters, etc., because they can provide excellent thermal management and electrical insulation performance. DBC may include a base solder layer (or bonding layer), a third metal layer (such as a copper layer) and an insulating layer (such as a ceramic layer) stacked from bottom to top. Among them, the ceramic materials that can be used for the ceramic layer are Al 2 O 3 (aluminum oxide), AlN (aluminum nitride) and Si 3 N 4(Silicon nitride); The ceramic layer provides good thermal insulation and mechanical support, and has good chemical stability and electrical insulation. The copper layer can be copper foil, usually with a thickness of 18μm to 35μm. The copper layer has excellent electrical and thermal conductivity, and is a carrier for circuit patterning, used to make conductive paths on circuit boards. The base solder layer can be a DBC substrate. The copper layer is usually directly bonded to the ceramic substrate without the need for an additional solder layer. A thin layer of solder (such as silver, gold, etc.) can also be used to enhance the bonding strength and ensure good physical contact and thermal conductivity between the two. The DBC substrate has excellent thermal conductivity, electrical insulation and mechanical stability.

[0058] In some embodiments, the module substrate includes a metal material substrate or a composite material substrate, and encapsulates the power unit and the control unit with the module housing.

[0059] Among them, in order to further optimize the design of the power unit, the module substrate can choose to use a metal substrate or a composite substrate. The metal substrate has good thermal conductivity and mechanical strength, which can effectively help dissipate heat and provide stable support; while the composite substrate has good insulation performance and corrosion resistance while reducing weight, which is suitable for application scenarios that are sensitive to weight or corrosive environments. By selecting a suitable substrate material, the performance of the servo drive can be optimized for specific application requirements, and its reliability and service life can be improved. Specifically, the use of a metal substrate (such as copper, aluminum or steel) can improve the efficiency of heat conduction, help to quickly transfer the heat generated by the power device, thereby improving the heat dissipation effect and extending the life of the equipment. The use of a composite substrate (such as carbon fiber reinforced plastic CFRP, glass fiber reinforced plastic GFRP, etc.) can greatly reduce weight while ensuring a certain strength, while enhancing resistance to environmental corrosion, and is suitable for special fields such as aerospace and marine equipment. The combination of metal materials or composite materials as substrates can effectively improve the integration of the servo drive, reduce the volume, enhance heat dissipation and reliability, and at the same time select the most suitable material for different use environments to further optimize its performance and applicability.

[0060] In some embodiments, the power semiconductor module 100 further includes:

[0061] an auxiliary power supply 144, electrically connected to the control unit via bonding wires, disposed on the module substrate, and used to provide an operating voltage to the control unit;

[0062] The terminal further includes: a DC input terminal and a DC output terminal, which are connected to the auxiliary power supply via bonding wires and are used to provide DC power to the auxiliary power supply.

[0063] Among them, the auxiliary power supply can provide corresponding working voltages to the processing unit, programmable logic control unit, driving circuit, etc. of the control unit. Specifically, the auxiliary power supply can convert the DC power supply into working voltages of the processing unit, programmable logic control unit, and driving circuit, respectively, and provide them to the corresponding processing unit, programmable logic control unit, and driving circuit.

[0064] In some embodiments, the terminal includes at least one of the following:

[0065] A three-phase power input terminal connected to the power unit via a bonding wire, for providing an AC voltage to the power unit;

[0066] An overcurrent protection terminal, connected to the control interface circuit via a bonding wire, and configured to output an overcurrent protection signal when an overcurrent occurs in the power semiconductor module;

[0067] A brake output terminal, connected to the control interface circuit via a bonding wire, for outputting a brake signal of a load;

[0068] The expansion terminal is connected to the control interface circuit via a bonding wire and is used to expand the function of the power semiconductor module.

[0069] Among them, the three-phase power input terminal, overcurrent protection terminal, brake output terminal and expansion terminal can be connected to the corresponding power unit or control interface circuit through bonding wires to ensure that the module can work efficiently and safely. Figure 2 As shown, Figure 2 A top view schematic diagram of a power semiconductor module according to an embodiment of the present disclosure is shown. Figure 2 In the module, the three-phase power input terminal provides the necessary power input; the overcurrent protection terminal provides overcurrent protection. When an overcurrent condition is detected, the control interface circuit can output a protection signal in time, cut off the power supply or take other protective measures to prevent damage to the module; the brake output terminal is used to control the brake of the load. When the load movement needs to be stopped, the control interface circuit sends a brake signal through the brake output terminal to stop the load quickly, thereby improving the response speed and safety of the system; the expansion terminal increases the functional expansibility of the module, for example, it can connect external devices or modules, add functions such as sensor input, additional control signals, etc., and improve the flexibility and applicability of the module. It not only improves the integration and reliability of the module, but also enhances its adaptability and flexibility in various application scenarios.

[0070] Specifically, the power device can form a rectifier circuit and an inverter circuit. The rectifier current is responsible for converting the AC power supply into a DC power supply to provide energy for the subsequent power inverter link. The inverter circuit (i.e., the power inverter) converts the DC power supply into an AC power supply, and controls the frequency and amplitude of the output voltage through pulse width modulation (PWM) technology, thereby controlling the speed and torque of the servo motor (i.e., the load). The auxiliary power supply provides the necessary power support for the electronic components inside the servo drive. The servo motor can be used as an actuator to directly drive the movement of the mechanical equipment, and the encoder is used to detect the position and speed information of the motor, which will be fed back to the processor for closed-loop control. The processing unit can process the feedback signal from the encoder, the target parameters set by the user, and the control command from the programmable logic unit, and then calculate the optimal control strategy and send these strategies to the power inverter. The programmable logic unit receives the signal from the encoder and exchanges data with external devices (such as PLC, HMI, etc.). The network bus uses the PHY (physical layer) interface, and the power semiconductor module can be connected to the industrial network to achieve remote monitoring and control. The current sampling terminal is used to monitor the current state of the motor in real time to ensure the safe operation of the servo drive. The control loop operation is one of the important tasks of the processor. It performs control algorithm operations, such as PID control, based on the various signals received to achieve the desired motor behavior. In the entire system, each part works closely together to form a complete servo drive link. The rectifier power supply provides energy, the power inverter converts the energy into the AC power required by the motor, the servo motor operates according to the instructions of the controller, the encoder provides position and speed feedback, the processor calculates the new control strategy based on the feedback and target parameters, and then adjusts the motor's action through the power inverter. In addition, the network terminal allows the servo drive to be integrated into a larger automation system for remote monitoring and control.

[0071] It can be seen that according to the power semiconductor module of the embodiment of the present disclosure, the power board and the control board are reconstructed into a new integrated power semiconductor module (integrated control, drive system and power devices), which greatly simplifies the application of the power module.

[0072] According to an embodiment of the present disclosure, a control device is also provided, including the power semiconductor module according to the embodiment of the present disclosure and a corresponding peripheral circuit.

[0073] Among them, the control device (such as a servo drive) adopts the power semiconductor module according to the present disclosure, which can not only provide more stable services, but also reduce maintenance costs and enhance the overall efficiency of the control device. Since the power semiconductor module highly integrates the power unit and the control unit, it not only improves the performance and reliability of the control device, but also significantly improves the power density. At the same time, it also greatly simplifies the design and development process of the control device, making it more compact and efficient, and suitable for application scenarios with strict requirements on space and performance. In this way, control devices such as servo drives further improve the integration power density, good reliability, and high robustness, and are also suitable for use in harsh environments such as high speed, high acceleration, high oil and high temperature.

[0074] Specifically, since the rectifier power supply formed by the power device requires a larger ripple capacitor, the ripple capacitor can be partially externalized, such as Figure 3 As shown, Figure 3 A schematic diagram of a control device according to an embodiment of the present disclosure is shown. Figure 3 In the embodiment, ripple capacitors or inverter circuits can be arranged as peripheral circuits outside the power semiconductor module to further reduce the volume of the power semiconductor module. Specifically, external ripple capacitors and other peripheral circuits can be connected to the substrate circuit in the power semiconductor module 100 through dedicated connecting wires (such as bonding wires) to ensure the reliability of signal transmission; the substrate circuit integrates control, protection and communication functional modules through a multi-layer PCB board to achieve a compact design. This design not only makes the servo drive more compact and lightweight, suitable for space-constrained application scenarios, but also improves the reliability and performance of the system, simplifies the internal layout, facilitates heat dissipation and maintenance, and may reduce production costs by using standard parts.

[0075] It can be seen that the power semiconductor module of the embodiment of the present disclosure can replace the traditional semiconductor power unit and be used in products such as servo drives, inverters, home appliances, and automotive electric drives, which greatly simplifies the design of corresponding products and improves integration and power density.

[0076] It should be noted that the above describes some embodiments of the present disclosure. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the above embodiments and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0077] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present disclosure (including the claims) is limited to these examples. Based on the concept of the present disclosure, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present disclosure as described above, which are not provided in detail for the sake of simplicity.

[0078] In addition, to simplify the description and discussion, and in order not to make the embodiments of the present disclosure difficult to understand, the known power / ground connections to the integrated circuit (IC) chips and other components may or may not be shown in the provided figures. In addition, the device can be shown in the form of a block diagram to avoid making the embodiments of the present disclosure difficult to understand, and this also takes into account the fact that the details of the implementation of these block diagram devices are highly dependent on the platform on which the embodiments of the present disclosure will be implemented (that is, these details should be fully within the scope of understanding of those skilled in the art). Where specific details (e.g., circuits) are set forth to describe exemplary embodiments of the present disclosure, it is apparent to those skilled in the art that the embodiments of the present disclosure can be implemented without these specific details or with changes in these specific details. Therefore, these descriptions should be considered illustrative rather than restrictive.

[0079] Although the present disclosure has been described in conjunction with specific embodiments of the present disclosure, many replacements, modifications and variations of these embodiments will be apparent to those skilled in the art from the foregoing description. For example, other memory architectures (e.g., dynamic RAM (DRAM)) may use the embodiments discussed.

[0080] The embodiments of the present disclosure are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present disclosure should be included in the scope of protection of the present disclosure.

Claims

1. A power semiconductor module with integrated drive control, comprising: Module housing and module substrate; A power unit, comprising a first substrate disposed on the module substrate, and a power device and a terminal disposed on the first substrate; A control unit, arranged on the power unit, comprising a second substrate, and a driving circuit and a control interface circuit arranged on the second substrate; wherein the second substrate is arranged on the first substrate through a support member, and the power device is located in a space formed by the first substrate, the second substrate and the support member; The control interface circuit is used to receive a sampling signal of a load and a given control instruction, and generate a control signal for controlling the drive circuit based on the control instruction and the sampling signal; The driving circuit performs modulation processing based on the control signal to generate a driving signal to drive the power unit, and the power unit controls the operation of the load based on the driving signal; The power unit and the control unit are encapsulated in an internal space formed by the module housing and the module substrate. The power unit, the control unit and the terminals are electrically connected via bonding wires. The terminals extend from the first substrate to the outside of the module housing.

2. The power semiconductor module according to claim 1, wherein: The terminal comprises: An encoder terminal, for receiving an encoding signal regarding a rotation speed and / or a position of a load; A network terminal, used for communicating with the outside via a network; A current sampling terminal, used to receive a current sampling signal of the load; And, the control interface circuit includes a processing unit and a programmable logic unit; The programmable logic unit is connected to the encoder terminal and the network terminal via bonding wires, and is used to receive the encoding signal and / or a given control instruction from the outside; The processing unit is connected to the current sampling terminal via a bonding wire to receive the current sampling signal; and the first data interface of the processing unit is connected to the second data interface of the programmable logic unit via a bonding wire to receive the control instruction and / or the encoding signal.

3. The power semiconductor module according to claim 2, wherein: The control instruction includes at least one of a current reference signal, a position reference signal and a speed reference signal of the load; Then generating a control signal for controlling the driving circuit based on the control instruction and the sampling signal includes: generating the control signal based on a current error between the current reference signal and the current sampling signal; Alternatively, determining an actual position signal based on the coded signal; generating the control signal based on a first difference between the position reference signal and the actual position signal; Alternatively, an actual rotation speed signal is determined based on the encoding signal; and the control signal is generated based on a second difference between the rotation speed reference signal and the actual rotation speed signal.

4. The power semiconductor module according to claim 1, wherein: The power unit further comprises: A diode device is electrically connected to the power device via a bonding wire and is jointly arranged on the first metal layer of the first substrate, and is used to prevent the bridge arm formed by the power device from being directly connected.

5. The power semiconductor module according to claim 4, wherein: The power unit further comprises: a thermal protection device, disposed on the first metal layer and connected to the processing unit via a bonding wire, for detecting an internal temperature of the power unit; The processing unit is connected to the overheat protection terminal via a bonding wire, and is further configured to output an overheat protection signal via the overheat protection terminal when the internal temperature is higher than a temperature threshold.

6. The power semiconductor module according to claim 1, wherein: The terminal is arranged on the first substrate through a second metal layer, and the power device, the second substrate and the second metal layer are electrically connected through bonding wires.

7. The power semiconductor module according to claim 1, wherein: The first substrate includes a base solder layer, a third metal layer and an insulating layer stacked from bottom to top; the first metal layer and the second metal layer are arranged on one side of the insulating layer, and the third metal layer is arranged on the other side of the insulating layer.

8. The power semiconductor module according to claim 1, further comprising: an auxiliary power supply, electrically connected to the control unit via bonding wires, disposed on the module substrate, and used to provide an operating voltage to the control unit; The terminal further includes: a DC input terminal and a DC output terminal, which are connected to the auxiliary power supply via bonding wires and are used to provide DC power to the auxiliary power supply.

9. The power semiconductor module according to claim 1, wherein: The terminal includes at least one of the following: A three-phase power input terminal connected to the power unit via a bonding wire, for providing an AC voltage to the power unit; An overcurrent protection terminal, connected to the control interface circuit via a bonding wire, and configured to output an overcurrent protection signal when an overcurrent occurs in the power semiconductor module; A brake output terminal, connected to the control interface circuit via a bonding wire, for outputting a brake signal of a load; The expansion terminal is connected to the control interface circuit via a bonding wire and is used to expand the function of the power semiconductor module.

10. A control device comprising a power semiconductor module according to any one of claims 1 to 9 and a corresponding peripheral circuit.

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