Light-emitting device package and preparation method thereof

Abstract

The invention relates to a light-emitting device package comprising a chip layer, and the chip layer comprises a first surface and a second surface which are oppositely arranged; the supporting structure is arranged on the first surface of the chip layer, the chip layer comprises one or more chips, and each chip comprises one or more light-emitting units. The support structure includes a cavity and one or more sub-pixel slots disposed below the cavity. The sub-pixel grooves extend from the first surface of the chip layer to the cavity in the direction from the second surface to the first surface, the sub-pixel grooves correspond to the light-emitting units and are filled with light conversion materials, and the inner side of the side wall of the supporting structure is of a step structure. According to the arrangement, the packaging strength of the light-emitting device is guaranteed, meanwhile, the printing requirement of the light conversion material is met, and the filling efficiency and accuracy of the light conversion material are improved.

Description

Technical Field

[0001] The present application relates to the semiconductor field, and in particular to a light emitting device package and a preparation method thereof. Background Art

[0002] MIP (Multi-Integrated Packaging) is an advanced LED packaging technology that integrates multiple LED chips together, avoiding the cumbersome process of chip packaging and achieving a higher degree of chip integration. However, conventional integrated packaging requires the transfer of a large number of LED chips, resulting in complex chip packaging processes, low efficiency and low yield.

[0003] Therefore, it is necessary to provide a LED chip packaging method to reduce the cost while improving the efficiency and yield of LED chip packaging. Summary of the invention

[0004] The purpose of the present application is to provide a light emitting device package and a method for manufacturing the same, so as to solve the problems raised in the above background technology.

[0005] In order to achieve the above objectives, this application provides the following technical solutions:

[0006] One aspect of the present application provides a light-emitting device package, comprising: a chip layer, the chip layer comprising a first surface and a second surface arranged opposite to each other; a support structure, arranged on the first surface of the chip layer. The chip layer comprises one or more chips, and the chip comprises one or more light-emitting units. The support structure comprises a cavity and one or more sub-pixel grooves arranged below the cavity, the sub-pixel grooves extending from the first surface of the chip layer to the cavity in a direction from the second surface to the first surface, and the sub-pixel grooves correspond to the light-emitting units. The sub-pixel grooves are filled with light conversion materials, and the inner side of the sidewall of the support structure is arranged as a stepped structure.

[0007] According to some embodiments of the present application, the sidewall of the support structure includes a first sidewall and a second sidewall, the first sidewall is disposed on the second sidewall, the first sidewall surrounds the cavity, the second sidewall surrounds one or more sub-pixel grooves, and in a direction perpendicular to the second surface to the first surface, the width of the first sidewall is smaller than the width of the second sidewall.

[0008] According to some embodiments of the present application, one or more sub-pixel grooves include a first sub-pixel groove, a second sub-pixel groove, and a third sub-pixel groove, and the first sub-pixel groove is filled with a red light conversion material, the second sub-pixel groove is filled with a green light conversion material, and the third sub-pixel groove is filled with a blue light conversion material or is not filled.

[0009] According to some embodiments of the present application, in a direction from the second surface to the first surface, the depth of the sub-pixel groove is equal to the thickness of the second sidewall, and the thickness of the second sidewall is 10 micrometers to 20 micrometers.

[0010] According to some embodiments of the present application, a first encapsulation layer and a second encapsulation layer are disposed in the cavity, the second encapsulation layer is disposed on the first encapsulation layer, the first encapsulation layer includes an inorganic encapsulation material, and the second encapsulation layer includes an organic encapsulation material.

[0011] According to some embodiments of the present application, the light absorbing layer is disposed between the first encapsulation layer and the second encapsulation layer.

[0012] According to some embodiments of the present application, in a projection of the light emitting device package from the second surface to the first surface, a sidewall of the support structure overlaps at least a portion of a periphery of the one or more chips.

[0013] One aspect of the present application provides a method for packaging a light-emitting device, comprising: providing a support structure; arranging a chip layer on the support structure, the chip layer comprising a first surface and a second surface arranged opposite to each other; arranging a first mask layer on the support structure, and patterning the first mask layer; arranging a second mask layer on the patterned first mask layer, using the second mask layer as a mask to perform a first etching on the support structure to obtain one or more grooves of the support structure; and removing the second mask layer, using the first mask layer as a mask, performing a second etching on the support structure after the first etching to obtain a cavity and one or more sub-pixel grooves of the support structure. The sub-pixel groove extends from the first surface of the chip layer to the cavity in the direction from the second surface to the first surface, and the inner side of the side wall of the support structure is formed into a stepped structure after the first etching and the second etching.

[0014] According to some embodiments of the present application, the light emitting device packaging method further includes removing the first mask layer; and printing and filling the light conversion material into one or more sub-pixel grooves.

[0015] According to some embodiments of the present application, the sub-pixel grooves include a first sub-pixel groove, a second sub-pixel groove, and a third sub-pixel groove, the light conversion material includes a red light conversion material, a green light conversion material, and a blue light conversion material, and the first sub-pixel groove is filled with the red light conversion material, the second sub-pixel groove is filled with the green light conversion material, and the third sub-pixel groove is filled with the blue light conversion material or is not filled.

[0016] According to some embodiments of the present application, a second mask layer is provided on a patterned first mask layer, and the second mask layer is used as a mask to perform a first etching on the support structure to obtain one or more grooves of the support structure, including: using the second mask layer as a mask, performing a first etching on the support structure to obtain one or more grooves, sidewalls, and isolation walls between the grooves. The second mask layer is removed, and the first mask layer is used as a mask to perform a second etching on the support structure after the first etching to obtain a cavity of the support structure and one or more sub-pixel grooves, including: after the second etching, the sidewall is etched into a first sidewall and a second sidewall, in the direction perpendicular to the second surface to the first surface, the width of the first sidewall is smaller than the width of the second sidewall, the first sidewall surrounds the cavity, and after the second etching, the height of the isolation wall is reduced, and a sub-pixel groove is formed between the second sidewall and the isolation wall and / or between the isolation walls.

[0017] According to some embodiments of the present application, the first mask layer includes an inorganic mask material, the second mask layer includes photoresist, the first etching includes photolithography, and the second etching includes planar photoresist mask etching.

[0018] According to some embodiments of the present application, a first packaging material is printed into a cavity to form a first packaging layer; and a second packaging material is printed into the cavity and on the first packaging layer. Before forming the second packaging layer, the light-emitting device packaging method also includes forming a light absorbing layer on the first packaging layer.

[0019] Compared with the prior art, the beneficial effects of this application are:

[0020] 1. This application combines silicon-based LED chips with printing color transfer technology to produce a light-emitting device package, which has low process cost and high yield;

[0021] 2. The support structure of the present application adopts a stepped structure to ensure the strength of the light-emitting device package and avoid process damage and abnormalities of the bonded temporary substrate;

[0022] 3. The present application adopts a stepped support structure, which not only ensures the packaging strength of the light-emitting device, but also meets the requirements of the printing of the light-conversion material, thereby improving the filling efficiency and accuracy of the light-conversion material. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The present application will be further described in the form of exemplary embodiments, which will be described in detail by way of the accompanying drawings. These embodiments are not restrictive, and in these embodiments, the same number represents the same structure, wherein:

[0024] Figure 1 is a cross-sectional view of an exemplary light emitting device package according to some embodiments of the present application;

[0025] Figure 2 is a cross-sectional view of a conventional light emitting device package;

[0026] Figure 3 is a schematic diagram of an exemplary light emitting device package according to some embodiments of the present application;

[0027] Figure 4 yes Figure 3 A schematic diagram of a supporting structure corresponding to a light-emitting chip is shown;

[0028] Figure 5a-5d is a schematic diagram of preparing an exemplary support structure according to an embodiment of the present application;

[0029] Figure 6 is a schematic diagram of an exemplary light emitting device package according to some embodiments of the present application;

[0030] Figure 7 is a schematic diagram of exemplary light conversion material filling according to some embodiments of the present application;

[0031] Figure 8 is a schematic diagram of exemplary packaging material filling according to some embodiments of the present application;

[0032] Fig. 9 is a top view of another exemplary light emitting device package according to some embodiments of the present application;

[0033] Figure 10-14 It is a schematic diagram of preparing another light emitting device package according to some embodiments of the present application. DETAILED DESCRIPTION

[0034] The exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the specific embodiments described herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present application and to fully convey the scope disclosed in the present application to those skilled in the art.

[0035] In the following description, a large number of specific details are given to provide a more thorough understanding of the present application. However, it is obvious to those skilled in the art that the present application can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present application, some technical features known in the art are not described; that is, all features of the actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0036] In the drawings, the sizes of layers, units, devices, elements and their relative sizes may be exaggerated for clarity. The same reference numerals denote the same elements throughout.

[0037] It should be understood that when an element or layer is referred to as "on ... ", "adjacent to ... ", "connected to" or "coupled to" other elements or layers, it can be directly on other elements or layers, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ... ", "directly adjacent to ... ", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, units, layers and / or parts, these elements, components, units, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, unit, layer or part from another element, component, unit, layer or part. Therefore, without departing from the teaching of the present application, the first element, component, unit, layer or part discussed below can be represented as the second element, component, unit, layer or part. And when the second element, component, unit, layer or part discussed, it does not indicate that the present application necessarily has the first element, component, unit, layer or part.

[0038] Spatially relative terms such as "under", "beneath", "below", "under", "above", "above", etc., may be used here for convenience of description to describe the relationship between an element or feature shown in the figure and other elements or features. It should be understood that in addition to the orientation shown in the figure, the spatial relationship terms are intended to also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, then the elements or features described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0039] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0040] In order to thoroughly understand the present application, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present application. The preferred embodiments of the present application are described in detail below, but in addition to these detailed descriptions, the present application may also have other implementation methods.

[0041] Figure 1 is a cross-sectional view of an exemplary light emitting device package according to some embodiments of the present application. Figure 1 As shown, the light emitting device package 100 includes a chip layer 110 , a support structure 120 and a pad 130 .

[0042] The chip layer 110 can be used to convert electrical energy into light energy to provide the main light output of the light emitting device. In some embodiments, the chip layer 110 may include one or more chips (e.g., Figure 4 A single chip or Figure 10-13 The chips may be of different types according to the requirements of specific applications. For example, the chip may be a blue light chip or an ultraviolet light chip; the chip may be a Micro LED (micro light emitting diode) chip. The chip may be made of a semiconductor material capable of generating light of a specific wavelength, such as gallium nitride (GaN), gallium arsenide (GaAs), etc., or a combination thereof, and its thickness and size may be adjusted according to the specific application. In some embodiments, the chip may include one or more light emitting units.

[0043] The chip layer 110 has a first surface 112 and a second surface 114 opposite to each other. The first surface 112 is generally the upper surface of the chip, on which a support structure 120 may be disposed. The second surface 114 is the bottom surface of the chip, which contacts other structural layers (e.g., pads 130, adhesive layers, temporary substrates, etc.) for providing mechanical support or electrical connection.

[0044] The support structure 120 is disposed on the first surface 112 of the chip layer 110 to provide mechanical support and protection functions. The support structure 120 may be a silicon substrate, or may be made of a transparent material, such as sapphire, silicon oxide (SiO2), silicon nitride (Si3N4), silicon carbide (SiC) or other medium with high light transmittance to reduce light absorption loss. The support structure 120 may include a sidewall 121, a cavity 122, one or more sub-pixel grooves 123, and an isolation wall 126. The sidewall 121 of the support structure 120 may include a first sidewall 125 and a second sidewall 124, and the first sidewall 125 is disposed on the second sidewall 124. In some embodiments, in a direction perpendicular to the second surface 114 to the first surface 112, the width of the first sidewall 125 is less than the width of the second sidewall 124, so that the inner side of the sidewall 121 of the support structure 120 may be set as a stepped structure.

[0045] In some embodiments, the materials of the first sidewall 125 and the second sidewall 124 may be the same or different. In the projection of the light-emitting device from the second surface 114 to the first surface 112, the sidewall 121 of the support structure 120 overlaps at least a portion of the periphery of one or more chips in the chip layer 110. The first sidewall 125 surrounds and defines a cavity 122, in which one or more encapsulation layers may be disposed.

[0046] The sub-pixel groove 123 may penetrate the bottom surface of the support structure 120, and extend from the first surface 112 of the chip layer 110 to the cavity 122 along the direction from the second surface 114 of the chip layer 110 to the first surface 112 (i.e., the thickness direction of the light-emitting device package). The second sidewall 124 is disposed on the first surface 112 of the chip layer 110, and provides mechanical support for the light-emitting device package while also controlling the scattering angle of light emitted from the chip, thereby improving the output directivity of the light.

[0047] The second sidewall 124 surrounds and defines the sub-pixel groove 123. The sub-pixel groove 123 can be used to fill the light conversion material. In some embodiments, one or more sub-pixel grooves 123 can correspond to one or more chips in the chip layer 110. Specifically, one sub-pixel groove can correspond to one light-emitting unit in the chip. For details, see Figure 3 and Figure 4 And related descriptions. An isolation wall 126 may be provided between the sub-pixel grooves 123. The height of the isolation wall 126 is lower than the height of the first side wall 125. In some embodiments, the material of the isolation wall 126 may be the same as or different from the material of the support structure 120. In some embodiments, the isolation wall 126 may be prepared by the same process as the second side wall 124, which helps to simplify the process flow and improve production efficiency. In some embodiments, the filling method of the photoconversion material may include spraying, dripping, scraping, printing (for example, screen printing, inkjet printing, etc.), in-mold injection molding, electrophoretic deposition, vacuum injection, stimulation curing, etc. or a combination thereof. For a detailed description of the sub-pixel grooves and photoconversion materials, see Figure 4 and its related description.

[0048] The chip layer 110 may be electrically connected to the pad 130. The material of the pad 130 includes at least one of titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), silver (Ag), tin (Sn), platinum (Pt), or an alloy of the above metal materials.

[0049] The description of the above-mentioned light-emitting device package 100 is for illustrative purposes only and is not intended to limit the scope of the present application. For those of ordinary skill in the art, various changes and modifications can be made according to the description of the present application. For example, a light reflecting layer may be provided on the inner side of the first side wall 125 of the light-emitting device package 100 to reflect the light emitted by the chip, thereby improving the optical efficiency or achieving a specific optical effect. Since the height of the isolation wall 126 is lower than the height of the first side wall 125, the light reflecting layer may be relatively easily provided (for example, coated) to the inner side of the first side wall 125. For another example, a light absorbing layer may be provided in the cavity 122 to absorb the missed light emitted by the chip layer 110 that is not converted by the light conversion material. These changes and modifications are still within the scope of protection of the present application.

[0050] Figure 2 FIG. 1 is a cross-sectional view of a conventional light emitting device package. Figure 2 As shown, the support structure 220 is arranged on the chip layer 210. The support structure 220 may include a plurality of side walls 221 ..., ...227 (the side walls 222 ..., ...226 may also be referred to as isolation walls here). The side walls 221 ..., ...227 surround the cavity 150 (which may also be referred to as sub-pixel grooves here). In order to prevent the wafer from warping, the height of the isolation walls between the side walls of the support structure and / or the sub-pixel grooves of the conventional light-emitting device is usually set to be greater than or equal to 100 microns, but the side walls and isolation walls that are too high and steep will cause obvious ink droplet hanging on the wall, and it is impossible to form a light conversion material with the desired thickness and uniformity. If the height of the side walls and / or isolation walls is lowered to facilitate the filling of the light conversion material, the wafer may be warped.

[0051] like Figure 1 As shown, in order to solve the above problems, the first side wall 125 of the support structure 120 in the present application can form a stepped structure with the second side wall 124. In the direction from the second surface 114 to the first surface 112 perpendicular to the chip layer 110, the width of the first side wall 125 can be smaller than the width of the second side wall 124. In the direction from the second surface 114 to the first surface 112, the height of the first side wall 125 can be greater than 100 microns, while the height of the second side wall 124 and / or the isolation wall 126 can be less than 20 microns. In this way, the first side wall 125 and the second side wall 124 can provide a higher supporting strength for the light-emitting device package 100. Since the height of the second side wall 124 and the isolation wall 126 is relatively low, the problem of uneven filling of the light conversion material due to the excessive height of the side wall 121 and the isolation wall 126 of the support structure 120 is avoided, and the strength of the light-emitting device package after thinning is ensured. The preparation of the light-emitting device package can be specifically referred to. Figure 5a-5d and its related description.

[0052] Figure 3is a schematic diagram of an exemplary light emitting device package according to some embodiments of the present application.

[0053] like Figure 3 As shown, the support structure is arranged on the chip layer, and the chip layer includes a plurality of chips, such as chips 331, 332, 333 and 334. The support structure includes a side wall 321, and the side wall 321 includes a third side wall 324 and a fourth side wall 325. The third side wall 324 is arranged around the chips 331, 332, 333 and 334, and the fourth side wall 325 is arranged between every two chips in the chips 331, 332, 333 and 334. Each chip in the chip layer corresponds to the support structure, that is, in a direction perpendicular to the thickness of the light-emitting device package, the side wall (the third side wall 324 and / or the fourth side wall 325) of the support structure can surround a plurality of sub-pixel grooves corresponding to a chip (or a plurality of light-emitting units in the chip) and overlap with the periphery of the chip, thereby playing a supporting role for a single chip.

[0054] Figure 4 yes Figure 3 A schematic diagram of a supporting structure corresponding to a light-emitting chip is shown.

[0055] like Figure 3 and 4 As shown, the support structure 320 includes a side wall 321, a sub-pixel groove and a separation wall. In a direction perpendicular to the thickness of the light-emitting device package, the side wall 321 overlaps the periphery of the corresponding chip. The side wall 321 includes a side wall 321-1, a side wall 321-2, a side wall 321-3 and a side wall 321-4. The sub-pixel groove includes a first sub-pixel groove 322-1, a second sub-pixel groove 322-2 and a third sub-pixel groove 322-3.

[0056] The isolation wall includes a first isolation wall 323-1, a second isolation wall 323-2 and a third isolation wall 323-3. The first isolation wall 323-1, the second isolation wall 323-2 and the third isolation wall 323-3 and / or the sidewall 321 surround and define the first sub-pixel groove 322-1, the second sub-pixel groove 322-2 and the third sub-pixel groove 322-3. Specifically, the first isolation wall 323-1 is arranged between the first sub-pixel groove 322-1 and the second sub-pixel groove 322-2, the second isolation wall 323-2 is arranged between the first sub-pixel groove 322-1 and the third sub-pixel groove 322-3, and the third isolation wall 323-3 is arranged between the second sub-pixel groove 322-2 and the third sub-pixel groove 322-3, so that the sub-pixel groove 322-1 is formed between the side wall 321-1, the side wall 321-3, the isolation wall 232-1 and the isolation wall 323-2; the sub-pixel groove 322-2 is formed between the side wall 321-2, the side wall 321-3, the isolation wall 323-1 and the isolation wall 323; and the sub-pixel groove 322-3 is formed between the side wall 321-1, the side wall 321-4, the isolation wall 323-2 and the isolation wall 323-3. The sidewall 321 and the isolation wall can reduce crosstalk (light overflow) between light-emitting units, enhance display effects, and improve display contrast and color saturation; they can also prevent electrical interference between different chips to ensure that each chip works independently. In addition, since the chip generates heat during operation, the sidewall 321 and the isolation wall can help dissipate heat in local areas by providing additional thermal isolation, thereby avoiding performance degradation or thermal damage caused by excessive temperature.

[0057] The chip corresponding to the support structure 320 includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit, respectively. The first sub-pixel groove 322-1, the second sub-pixel groove 322-2, and the third sub-pixel groove 322-3 correspond to the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit, respectively. The first light-emitting unit, the second light-emitting unit, and the third light-emitting unit may include a red light-emitting unit, a green light-emitting unit, and a blue light-emitting unit. The first sub-pixel groove 322-1, the second sub-pixel groove 322-2, and the third sub-pixel groove 322-3 are respectively filled with red light conversion material, green light conversion material, and blue light conversion material or no filling. As an example only, if the chip is an ultraviolet light-emitting chip, the first sub-pixel groove 322-1, the second sub-pixel groove 322-2, and the third sub-pixel groove 322-3 are respectively filled with red light conversion material, green light conversion material, and blue light conversion material. For another example, if the chip is a blue light emitting chip, the first sub-pixel groove 322 - 1 and the second sub-pixel groove 322 - 2 are respectively filled with a red light conversion material and a green light conversion material, and the third sub-pixel groove 322 - 3 is not filled.

[0058] Green light conversion materials may include InP quantum dots, CdSe quantum dots, CdSe / ZnS core-shell structure quantum dots, perovskite structure CsPbX3 (X=Cl, Br, I) quantum dots, etc. or their combinations; Eu2+ doped β-Sialon, Eu2+ doped Li2CaSiO4, etc. or their combinations. Red light conversion materials may include rare earth ion Eu2+ doped CaAlSiN3, Eu2+ doped Ca0.8Li0.2Al0.8Si1.2N3, Eu2+ doped (Ca, Sr, Ba)2Si5N8:Eu2+ or their combinations; Mn4+ doped K2SiF6 phosphor, Mn4+ doped K2GeF6 phosphor, Mn4+ doped K2TiF6 phosphor, etc. or their combinations; Pr3+ doped YAG phosphor; or any combination of any two of the above, or any combination of any three. The blue light conversion material may include yttrium aluminum garnet (YAG) based phosphors, silicate phosphors (e.g., Sr2SiO4:Eu 2+ ), nitride or oxynitride phosphors (e.g., Sr2Si2Al2N8:Eu 2+ 、CaAlSiN3:Eu 2+ ), sulfide fluorescence (SrS:Eu 2+ ); CdSe / ZnS quantum dots, cadmium-free quantum dots (e.g., InP / ZnS quantum dots); metal organic framework materials (MOFs); perovskite nanocrystals (e.g., CsPbBr3); or a combination of any two of the above, or a combination of any three of the above.

[0059] It is understandable that the red light-emitting unit, the green light-emitting unit and the blue light-emitting unit can constitute a light-emitting pixel unit (full-color LED chip) that emits light of three colors: red (R), green (G) and blue (B).

[0060] In some embodiments, Figure 1 The cross-sectional view of the light emitting device package shown in FIG. Figure 4 The cross-sectional view is taken along the line AA' shown.

[0061] It should be understood that Figure 3 and Figure 4 It is only illustrated that the projection shape of the sub-pixel groove in the direction perpendicular to the thickness of the light-emitting device package is a rectangle or a pentagon, and each light-emitting unit corresponds to three sub-pixel grooves. The present application does not exclude that the projection shape of the sub-pixel groove in the direction perpendicular to the thickness of the light-emitting device package is a triangle, a circle, a trapezoid, a hexagon or other suitable shapes. The present application also does not exclude that the sub-pixel grooves include four, five or more.

[0062] Figure 5a-5dFIG5 is a schematic diagram of preparing an exemplary support structure according to an embodiment of the present application. As shown in FIG5 , the preparation process of the support structure 500 includes the following steps:

[0063] Step 1: Figure 5a As shown, a support structure 510 is provided, and a chip layer 520 is arranged on the support structure 510. In some embodiments, the chip layer 520 may include a single chip. The support structure 510 may be a growth substrate for the chips in the chip layer 520, and the epitaxial structure in the chip is formed on the support structure 510 by epitaxial growth along the direction from the first surface 502 to the second surface 504 of the chip layer 520. For detailed description of the support structure 510 and the chip layer 520, see Figure 1 Related description of the support structure 120 and the chip layer 110.

[0064] Step 2: If Figure 5b As shown, a first mask layer 511 is disposed on the support structure 510, and the first mask layer 511 is patterned.

[0065] The first mask layer may include an inorganic mask material. The material of the first mask layer 511 may include silicon oxide, amorphous carbon, silicon nitride, aluminum nitride, a metal film (e.g., chromium, titanium, aluminum, etc.), a metal oxide film (e.g., aluminum oxide, zinc oxide, etc.). The preparation method of the first mask layer 511 may include physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), solution method, thermal evaporation method, ion beam deposition (IBD), etc. or other mask layer preparation methods, which are not specifically limited herein. The pattern of the first mask layer 511 is consistent with the cavity of the support structure 510 (e.g., Figure 1 Corresponding to the cavity 122 in.

[0066] Step 3: If Figure 5c As shown, a second mask layer 512 is disposed on the patterned first mask layer 511. The second mask layer 512 may include, but is not limited to, photoresist. The second mask layer 512 may be disposed on the patterned first mask layer 511 (for example, by coating, spin coating, or spray coating) to completely cover the first mask layer 511 and the upper surface of the support structure 510 exposed by the patterned first mask layer 511. The second mask layer 512 may have a pattern corresponding to one or more sub-pixel grooves 513.

[0067] The support structure 510 is etched for the first time using the second mask layer 512 as a mask to obtain one or more grooves 519, sidewalls 514, and isolation walls 515 between the grooves 519 of the support structure 510. The first etching may include photolithography. The one or more grooves 519 formed by the first etching may penetrate the support structure 510. The heights of the sidewalls 514 and the isolation walls 515 may be equal. The depth of the grooves 519 formed after the first etching may be 100 microns to 120 microns. If the depth of the grooves 519 is less than 100 microns, the prepared wafer may be warped. If the depth of the grooves 519 is greater than 120 microns, the size of the wafer is too large, which increases the difficulty of the subsequent cutting and polishing process and increases the production cost.

[0068] Step 4: Figure 5d As shown, after the first etching, the second mask layer 512 is removed, and the first mask layer 511 is used as a mask to perform a second etching on the support structure 510 after the first etching, thereby obtaining the cavity 516 and the sub-pixel groove 513 of the support structure 510.

[0069] The second etching may include wet etching, dry etching, laser etching, ion beam etching, reactive gas etching, etc. or a combination thereof. In some embodiments, due to the formation of one or more relatively deep grooves 519 in the support structure 510 after the first etching, the upper surface of the support structure 510 is uneven, making it difficult to evenly coat the photoresist again. Therefore, the second etching may use other etching processes other than the photolithography process, thereby avoiding the problem of photolithography deviation caused by poor mask pattern due to uneven coating of photoresist.

[0070] After the second etching, the sidewall 514 of the support structure 510 and the isolation wall 515 between the groove 519 are further etched and the height is reduced. The sidewall 514 is further etched into a first sidewall 517 and a second sidewall 518. The first sidewall 517 surrounds and forms the cavity 516. The sub-pixel groove 513 is formed between the second sidewall 518 and the isolation wall 515 and / or between adjacent isolation walls 515. The first sidewall 517 is arranged on the second sidewall 518. The width of the first sidewall 517 in the direction perpendicular to the first surface 502 to the second surface 504 (i.e., the thickness direction of the chip layer 520) can be smaller than the width of the second sidewall 518. A step structure is formed on the inner sides of the first sidewall 517 and the second sidewall 518. The height of the second sidewall 518 can be equal to the height of the isolation wall 515 and less than Figure 5c The height of the first side wall 517 is 0.

[0071] In some embodiments, after the second etching, the height of the isolation wall 515 can be 10 microns to 20 microns, for example, 10 microns, 12 microns, 14 microns, 15 microns, 16 microns, 18 microns, and 20 microns. If the height of the isolation wall 515 is greater than 20 microns, it may cause the subsequent light conversion material to be difficult to fill or to be filled unevenly. If the height of the isolation wall 515 is less than 10 microns, it may cause the light conversion material to overflow, reduce the light conversion rate, and in severe cases may cause the light emitting device to be disconnected or the yield to be reduced.

[0072] Due to the setting of the stepped structure, the height of the second side wall 518 and the isolation wall 515 is reduced, thereby preventing the occurrence of wall hanging during the filling process of the light conversion material due to the excessive height of the side wall 514 and the isolation wall 515 of the supporting structure 510. At the same time, the size of the sub-pixel groove 513 can be flexibly set according to the size of the chip, thereby improving the applicability of the light-emitting device package and reducing the process difficulty of filling the light conversion material.

[0073] Figure 6 is a schematic diagram of an exemplary light emitting device package according to some embodiments of the present application. In some embodiments, Figure 6 The light emitting device package shown can be Figure 5a-5d The operation is carried out after the preparation of the support structure.

[0074] like Figure 6 As shown, the chip layer 520 includes a first surface 502 and a second surface 504 that are arranged opposite to each other, a support structure 510 is arranged on the first surface 502, and a pad 630 may be arranged on the second surface 504. A temporary substrate 620 may be arranged on the second surface 504. The temporary substrate 620 may provide mechanical support for the encapsulation of the light-emitting device, and may withstand high temperature and chemical corrosion, thereby protecting the chip layer 520. The temporary substrate 620 may be made of a rigid or semi-rigid material, such as a metal (e.g., stainless steel, titanium, etc.), a ceramic material, quartz glass, etc. An adhesive layer 610 may be arranged between the temporary substrate 620 and the chip layer 520, so as to improve the bonding strength between the temporary substrate 620 and the chip layer 520. The material of the adhesive layer 610 may include a thermoplastic material, a thermosetting resin, a peelable adhesive, etc., or a combination thereof.

[0075] Figure 7 is a schematic diagram of an exemplary light conversion material filling according to some embodiments of the present application. In some embodiments, Figure 7 The light conversion material filling shown can be Figure 6 The light emitting device package shown is then operated.

[0076] like Figure 7As shown, the photoconversion material 720 can be filled into the sub-pixel groove 513 by the printer 710. For an introduction to the photoconversion material 720, see Figure 4 The printer 710 may include an inkjet printer, a solution processing printer, a 3D printer, etc. As an example only, the photoconversion material 720 may be prepared into an ink having a desired fluidity and viscosity, and the ink made of the photoconversion material may be printed into the sub-pixel groove 513 using an inkjet printer.

[0077] Depend on Figure 7 As shown, since the width of the first side wall 517 in the side wall 514 is smaller than the width of the second side wall 518, and after two etchings, the height of the second side wall 518 and the isolation wall 515 is further reduced, so that the depth of the sub-pixel groove 513 is relatively small, and the cross-sectional area of ​​the cavity 516 is increased, which improves the operability of printing the photoconversion material and avoids the photoconversion material 720 from gathering on the sub-first side wall 517, the second side wall 518 and the isolation wall 515 during the printing process, thereby resulting in the problem of not being able to obtain a photoconversion material with an ideal thickness and uniformity.

[0078] Printing the photoconversion material 720 into the sub-pixel slot 513 using the printer 710 can, on the one hand, accurately control the filling amount of the photoconversion material 720; on the other hand, the multiple coating and exposure steps in the traditional photoconversion material filling process can be completed during the printing process, reducing production costs and production time; in addition, by adjusting the parameters such as the printer's nozzle, solution concentration and drying temperature, printing of different materials can be achieved, further improving manufacturing flexibility. In some embodiments, the sub-pixel slots filled with the same photoconversion material corresponding to the multiple chips in the chip layer 520 can be filled simultaneously or sequentially using the same printer, which improves filling efficiency and shortens the process flow.

[0079] Figure 8 is a schematic diagram of exemplary packaging material filling according to some embodiments of the present application. In some embodiments, Figure 8 The encapsulation material shown can be filled in Figure 7 The light conversion material shown is then filled and operated.

[0080] After printing the light conversion material 720 into one or more sub-pixel slots 513, one or more encapsulation layers may be disposed in the cavity 516. Figure 8 As shown, the first packaging material is filled in the cavity 516 to form a first packaging layer 810 .

[0081] In some embodiments, the first packaging material may include non-metal oxide materials (e.g., silicon dioxide, aluminum oxide, titanium oxide, etc.), nitride materials (e.g., silicon nitride, aluminum nitride, etc.), carbide materials (e.g., silicon carbide, boron carbide, etc.), metal oxide materials (e.g., zirconium oxide, magnesium oxide, etc.), metal sulfides and oxynitrides (e.g., zinc sulfide, aluminum oxynitride, etc.) and other inorganic packaging materials or combinations thereof.

[0082] The first packaging material can be disposed in the cavity 516 in any suitable manner, including but not limited to chemical vapor deposition, physical vapor deposition, atomic layer deposition, sol-gel method, vacuum evaporation, sputtering coating, coating, thermal oxidation method, etc. In some embodiments, the first packaging material can be filled into the cavity 516 by printing (e.g., inkjet printing). As an example only, the first packaging material can be prepared into an ink with desired fluidity and viscosity, and the ink made of the first packaging material can be printed into the cavity 516 using an inkjet printer 830, and the first packaging layer 810 can be obtained after curing. In some embodiments, a printer (e.g., a printer that prints light-converting materials) can be used. Figure 7 The printer 710) prints the first packaging material.

[0083] The first encapsulation layer 810 may be an inorganic encapsulation layer. The first encapsulation layer 810 can protect the chip from corrosion by the external environment, improve the mechanical strength, temperature resistance and chemical stability of the light-emitting device package, and provide electrical isolation for the chip.

[0084] Furthermore, a second packaging material may be filled in the cavity 516 and on the first packaging layer 810 to form a second packaging layer 820 .

[0085] The second encapsulation material may include, but is not limited to, epoxy resin, polyimide, silicone material, acrylic resin, polyurethane, epoxy resin, liquid crystal polymer and other organic encapsulation materials or combinations thereof. The second encapsulation material may be disposed in the cavity 516 in any suitable manner, including but not limited to solution coating, molding, potting, hot pressing, photocuring, molten deposition, chemical vapor deposition, roller coating, electrophoretic deposition, etc. In some embodiments, the second encapsulation material may be filled into the cavity 516 by printing (e.g., inkjet printing). As an example only, the second encapsulation material may be prepared into ink having the desired fluidity and viscosity, and the ink made of the second encapsulation material may be printed into the cavity 516 using an inkjet printer 830, and the second encapsulation layer 820 may be obtained after curing. In some embodiments, the second encapsulation material may be printed using a printer for printing the photoconversion material or a printer for printing the first encapsulation material, so that the filling of the photoconversion material and the encapsulation material may be completed efficiently, material costs may be greatly saved, and production efficiency may be improved. In some embodiments, the first encapsulation layer 810 and the second encapsulation layer 820 may be prepared with the same or different materials. For example, the first encapsulation layer 810 and the second encapsulation layer 820 may be integrally prepared from the same material.

[0086] The second encapsulation layer 820 may be an organic encapsulation layer. The second encapsulation layer 820 can provide mechanical support for the light-emitting device package, protect the chip and the circuit of the light-emitting device from external forces, absorb or disperse the heat generated by the chip, prevent the intrusion of external moisture, oxygen and corrosive gases (such as water vapor and salt spray), and avoid circuit oxidation, corrosion or performance degradation. The cost of organic encapsulation materials is relatively low, and can meet the needs of large-scale industrial production without significantly increasing costs.

[0087] In some embodiments, before the second encapsulation layer 820 is provided, a light absorbing layer may be provided on the first encapsulation layer 810. The function of the light absorbing layer is to absorb light within a specific wavelength range to achieve efficient use of light energy, adjust the spectral distribution, improve the photoelectric conversion efficiency, or reduce unnecessary light reflection losses. The light absorbing layer may include a blue light absorbing layer, a red light absorbing layer, and a green light absorbing layer. The type of light absorbing layer is related to the type of light emitted by the light emitting unit. As an example only, if the light emitted by the light emitting unit is blue light, the light absorbing layer may absorb the blue light that is not converted by the green light conversion material and / or the red light conversion material.

[0088] In some embodiments, the light absorbing layer may include a plurality of parts. As an example only, the light absorbing layer may include a first part, a second part, and a third part. The first part may be disposed on the first sub-pixel groove, the second part may be disposed on the second sub-pixel groove, and the third part may be disposed on the third sub-pixel groove, respectively used to absorb the light emitted by the light emitting unit and not converted and leaked by the light conversion material in each sub-pixel groove.

[0089] In some embodiments, the material of the light absorbing layer may include a semiconductor material with a specific band gap (e.g., cadmium sulfide, cadmium selenide or other compound semiconductors), an organic dye (e.g., porphyrin or phthalocyanine compound), a quantum dot (e.g., indium sulfide quantum dot or cadmium telluride quantum dot), or a two-dimensional material (e.g., graphene or transition metal dichalcogenide), etc. or a combination thereof. In some embodiments, the light absorbing layer may be disposed on top of the light conversion material by physical vapor deposition (PVD), chemical vapor deposition (CVD), solution spin coating, inkjet printing, atomic layer deposition (ALD) or sol-gel process. In addition, the light absorbing layer may be surface passivated or structurally optimized (e.g., nano-patterning process) to further improve the overall performance of the light emitting device.

[0090] In some embodiments, before the first encapsulation layer 810 and the second encapsulation layer 820 are provided, a reflective layer may be provided on the inner side of the first side wall 517 to reflect light of a specific wavelength emitted from the chip, thereby improving the light extraction efficiency of the light emitting device. The material of the light reflective layer may include a metal reflective material (e.g., aluminum, silver, gold, platinum, copper, etc.), a dielectric reflective material (e.g., oxide, nitride, fluoride, etc.), a nanostructure material (e.g., silicon dioxide nanostructure, etc.), etc. or a combination thereof. The reflective layer may be provided on the inner side of the first side wall 517 by physical vapor deposition, chemical vapor deposition, solution coating, electroplating and chemical plating, etching, thermal spraying, molecular beam epitaxy, sol-gel, spin coating, etc.

[0091] In some embodiments, after packaging the light emitting device, the light emitting device package may be polished and thinned to a desired thickness, for example, 100 to 120 microns (eg, 100 microns, 105 microns, 110 microns, 115 microns, 120 microns).

[0092] Fig. 9 FIG. 1 is a top view of another exemplary light emitting device package according to some embodiments of the present application. Fig. 9 As shown, the light emitting device package 900 includes a chip layer 910 and a support structure 920. The chip layer 910 includes a chip 911, a chip 912, a chip 913, and a chip 914. The periphery of the chips in the chip layer 910 and the support structure 920 at least partially overlap in a direction perpendicular to the thickness of the light emitting device package 900. Figure 3The difference between the supporting structures in the embodiment is that the single supporting structure 920 in this embodiment corresponds to the chips 911, 912, 913 and 914, that is, the chips 911, 912, 913 and 914 share the supporting structure 920, that is, a separation wall can be provided between adjacent chips but no side wall is provided. Figure 10-14 and its related description.

[0093] Figure 10-14 It is a schematic diagram of preparing another light emitting device package according to some embodiments of the present application.

[0094] like Fig.10 As shown, a support structure 1020 is provided, a chip layer 1010 is arranged on the lower surface of the support structure 1020, the chip layer 1010 includes a first surface 1011 and a second surface 1012 arranged opposite to each other, the lower surface of the support structure 1020 is arranged opposite to the first surface 1011, a temporary substrate 1040 is arranged on the second surface 1012, and an adhesive layer 1030 is arranged between the chip layer 1010 and the temporary substrate 1040. The support structure 1020 is etched to obtain a first side wall 1021, a second side wall 1022, a sub-pixel groove 1023 and a cavity 1027 of the support structure 1020. For the specific process of packaging the light-emitting device, please refer to Figure 5a-5d , Figure 6 and its related description. Figure 5a-5d , Figure 6 Different from the light emitting device package in the embodiment of the present invention, the preparation steps of the support structure 1020 include:

[0095] Step 1: Disposing a first mask layer on the support structure 1020 and performing patterning on the first mask layer;

[0096] Step 2: a second mask layer is disposed on the patterned first mask layer, and the support structure 1020 is first etched using the second mask layer as a mask to obtain a plurality of sub-pixel grooves 1023, 1024, 1025, 1026 of the support structure. The second mask layer may include photoresist, and the first etching includes photolithography.

[0097] Multiple sub-pixel slots correspond to multiple chips respectively. For example, sub-pixel slot 1023-1 and sub-pixel slot 1023-2 in sub-pixel slot 1023 correspond to one chip (i.e., one pixel), sub-pixel slot 1024-1 and sub-pixel slot 1024-2 in sub-pixel slot 1024 correspond to one chip, sub-pixel slot 1025-1 and sub-pixel slot 1025-2 in sub-pixel slot 1025 correspond to one chip, and sub-pixel slot 1026-1 and sub-pixel slot 1026-2 in sub-pixel slot 1026 correspond to one chip.

[0098] Step 3: remove the second mask layer, use the first mask layer as a mask, and perform a second etching on the support structure after the first etching to obtain the stepped structure of the side wall of the support structure 1020 and the cavity 1027 .

[0099] Since two or more chips of the chip layer 1010 share the sidewalls of the support structure 1020 (ie, the first sidewall 1021 and the second sidewall 1022), relative to Figure 3 The groove 519 in the embodiment increases the total cross-sectional area of ​​the sub-pixel groove. Therefore, the second etching can be performed by using either planar photoresist mask etching or photolithography.

[0100] like Fig.11 As shown, light conversion materials are respectively filled into sub-pixel grooves 1023, 1024, 1025 and 1026. For example, sub-pixel grooves 1023-1, 1024-1, 1025-1 and 1026-1 can be filled with red light conversion materials, and sub-pixel grooves 1023-2, 1024-2, 1025-2 and 1026-2 can be filled with green light conversion materials. For information on filling light conversion materials, see Figure 7 and its related description.

[0101] like Fig.12 As shown, the first packaging material is filled in the cavity 1027 to form a first packaging layer 1210; and the second packaging material is filled on the first packaging layer 1210 to form a second packaging layer 1220. For details about the filling of the first packaging layer 1210 and the second packaging layer 1220, please refer to Figure 8 and its related description.

[0102] like Fig.13 As shown, the second encapsulation layer 1220 is divided into a plurality of sub-encapsulation layers, such as sub-encapsulation layer 1221, sub-encapsulation layer 1222, sub-encapsulation layer 1223 and sub-encapsulation layer 1224. The number of sub-encapsulation layers corresponds to the number of chips. In some embodiments, the division method of the second encapsulation layer 1220 includes but is not limited to laser division, mechanical division, chemical division, plasma division, water jet division, composite cutting, etc. As an example only, a photoresist can be set on the second encapsulation layer 1220, and a photolithography process can be performed to obtain sub-encapsulation layers 1221-1224.

[0103] like Fig.14 As shown, the light emitting device package is cut to prepare a single chip package 1400. The cutting method of the light emitting device package may include but is not limited to mechanical cutting, laser cutting, composite cutting, etc.

[0104] In some embodiments, the edge cutting path of the edge of the light emitting device package for cutting may overlap with the first side wall 1021 in the thickness direction of the light emitting device package. In some embodiments, the edge cutting path may overlap with the second side wall 1022 in the thickness direction of the light emitting device package, such as Fig.14 As shown. With such a configuration, on the one hand, the support structure 1020 can provide a higher mechanical strength during the preparation of the light-emitting device; on the other hand, it can meet the strength requirements of the light conversion material filling; and on the other hand, it ensures that the thickness or size of the chip after cutting meets the requirements. In some embodiments, the edge cutting road can overlap with the second side wall 1022 in the thickness direction of the light-emitting device package, so that the single chip package prepared after cutting is not blocked by the support structure, further improving the viewing angle of the light-emitting device.

[0105] It should be noted that the light-emitting element embodiment and the light-emitting device embodiment provided in the present application belong to the same concept; the technical features in the technical solutions recorded in the embodiments can be arbitrarily combined without conflict.

[0106] It should be understood that the above embodiments are exemplary and are not intended to include all possible implementations included in the claims. Various modifications and changes may be made on the basis of the above embodiments without departing from the scope of the present disclosure. Similarly, the various technical features of the above embodiments may be arbitrarily combined to form other embodiments of the present application that may not be explicitly described. Therefore, the above embodiments only express several implementations of the present application and do not limit the scope of protection of the patent of this application.

Claims

1. A light emitting device package, comprising: A chip layer, the chip layer comprising a first surface and a second surface arranged opposite to each other; A support structure is disposed on the first surface of the chip layer, The chip layer includes one or more chips, and the chip includes one or more light-emitting units. The support structure includes a cavity and one or more sub-pixel grooves arranged below the cavity, and the sub-pixel grooves extend from the first surface of the chip layer to the cavity in a direction from the second surface to the first surface. Wherein, the sub-pixel groove corresponds to the light-emitting unit, Wherein, the sub-pixel groove is filled with a light conversion material, and Wherein, the inner side of the side wall of the support structure is arranged as a stepped structure.

2. The light emitting device package according to claim 1, characterized in that: The side wall of the support structure includes a first side wall and a second side wall, wherein the first side wall is arranged on the second side wall. The first side wall surrounds the cavity, the second side wall surrounds one or more sub-pixel grooves, and In a direction perpendicular to the second surface to the first surface, a width of the first sidewall is smaller than a width of the second sidewall.

3. The light emitting device package according to claim 1, characterized in that: The one or more sub-pixel slots include a first sub-pixel slot, a second sub-pixel slot, and a third sub-pixel slot, and The first sub-pixel groove is filled with a red light conversion material, the second sub-pixel groove is filled with a green light conversion material, and the third sub-pixel groove is filled with a blue light conversion material or is not filled.

4. The light emitting device package according to claim 1, characterized in that: In the direction from the second surface to the first surface, The depth of the sub-pixel groove is equal to the thickness of the second side wall, and The thickness of the second sidewall is 10 micrometers to 20 micrometers.

5. The light emitting device package according to claim 1, characterized in that: The cavity is provided with a first packaging layer and a second packaging layer, wherein the second packaging layer is provided on the first packaging layer. The first encapsulation layer comprises an inorganic encapsulation material, and The second encapsulation layer includes an organic encapsulation material.

6. The light emitting device package according to claim 5, characterized in that: The light absorbing layer is disposed between the first encapsulation layer and the second encapsulation layer.

7. The light emitting device package according to claim 1, characterized in that: In a projection of the light emitting device package along a direction from the second surface to the first surface, a side wall of the support structure overlaps at least a portion of a periphery of one or more of the chips.

8. A light emitting device packaging method, comprising: Provide support structures; Arranging a chip layer on the support structure, wherein the chip layer comprises a first surface and a second surface arranged opposite to each other; Disposing a first mask layer on the support structure, and performing a patterning process on the first mask layer; Disposing a second mask layer on the patterned first mask layer, and using the second mask layer as a mask to perform a first etching on the support structure to obtain one or more grooves; as well as The second mask layer is removed, and the first mask layer is used as a mask to perform a second etching on the support structure after the first etching to obtain the cavity of the support structure and one or more sub-pixel grooves, The sub-pixel groove extends from the first surface of the chip layer to the cavity in a direction from the second surface to the first surface, and Wherein, after the first etching and the second etching, the inner side of the side wall of the support structure is formed into a step structure.

9. The light emitting device packaging method according to claim 8, further comprising: removing the first mask layer; as well as The photoconversion material is printed and filled into one or more of the sub-pixel grooves.

10. The light emitting device packaging method according to claim 9, characterized in that: The sub-pixel slots include a first sub-pixel slot, a second sub-pixel slot and a third sub-pixel slot. The light conversion material includes a red light conversion material, a green light conversion material and a blue light conversion material, and The first sub-pixel groove is filled with the red light conversion material, the second sub-pixel groove is filled with the green light conversion material, and the third sub-pixel groove is filled with the blue light conversion material or is not filled.

11. The light emitting device packaging method according to claim 8, characterized in that: The step of providing a second mask layer on the patterned first mask layer, and using the second mask layer as a mask to perform a first etching on the support structure to obtain one or more grooves comprises: Using the second mask layer as a mask, the support structure is etched for the first time to obtain one or more grooves, the sidewalls, and isolation walls between the grooves; The removing of the second mask layer and using the first mask layer as a mask to perform a second etching on the support structure after the first etching to obtain the cavity and one or more sub-pixel grooves of the support structure include: After the second etching, the sidewall is etched into a first sidewall and a second sidewall, in a direction perpendicular to the second surface to the first surface, the width of the first sidewall is smaller than the width of the second sidewall, and the first sidewall surrounds the cavity, and After the second etching, the height of the isolation wall is reduced, and the sub-pixel groove is formed between the second side wall and the isolation wall and / or between the isolation walls.

12. The light emitting device packaging method according to claim 8, characterized in that: The first mask layer comprises an inorganic mask material, The second mask layer comprises photoresist, The first etching comprises photolithography, and The second etching includes planar photoresist mask etching.

13. The light emitting device packaging method according to claim 8, further comprising: Printing a first packaging material into the cavity to form a first packaging layer; as well as Printing a second packaging material into the cavity and on the first packaging layer to form a second packaging layer.

14. The light emitting device packaging method according to claim 11, characterized in that: Before printing the second encapsulation material into the cavity and onto the first encapsulation layer to form the second encapsulation layer, the method further includes: A light absorbing layer is formed on the first encapsulation layer.

Images