Short-circuit fault-tolerant control method and device for power semiconductor device of resonant direct-current converter
By setting the asymmetric switching frequency in the resonant DC converter, the asymmetry problem caused by short circuit failure of power semiconductor devices under small DC capacitors is solved, soft switching control is realized, losses are reduced, and system efficiency is improved.
Patent Information
- Application Number
- CN202510745242.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-05
- Publication Date
- 2025-08-26
AI Technical Summary
In the prior art, when a resonant DC converter fails in a short circuit of a power semiconductor device under a small DC capacitor, the positive and negative half-wave resonant currents are asymmetry. The traditional topological reconstruction method makes some devices bear hard switches, with high losses, and lacks an effective fault-tolerant control method.
By judging the faulty power semiconductor device and setting the asymmetric switching frequency, soft switching control of the resonant DC converter is realized, including a fault judgment module and an execution module, which handles the on-off state and switching period settings in different fault conditions respectively.
Implement soft switches of resonant DC converters under short circuit failures of any power semiconductor device, reducing losses, no additional hardware circuits are required, and improving system efficiency.
Smart Images
Figure CN120546445A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of power electronic circuit fault control, and in particular relates to a short-circuit fault-tolerant control method and device for a resonant DC converter power semiconductor device. Background Art
[0002] Resonant DC converters can achieve primary-secondary side isolation and soft switching of all power semiconductor devices. They have outstanding advantages such as simple control and high operating efficiency. They are widely used in power electronic transformers, switching power supplies, various types of chargers and other occasions.
[0003] Generally speaking, the DC side capacitance of a resonant DC converter is much larger than the resonant capacitance, and its switching frequency is roughly equivalent to the resonant frequency of the high-frequency circuit. When any power semiconductor device experiences a short-circuit fault, fault-tolerant control can be achieved through topology reconstruction methods. However, in order to improve the power density of a resonant DC converter, it is usually hoped that its DC capacitance is as small as possible, or even roughly equivalent to the resonant capacitance. At this time, the switching frequency of the resonant DC converter is determined by the high-frequency resonant circuit and the DC side capacitance, and the relationship between the switching frequency and the resonant frequency is relatively complex. When a short-circuit fault occurs in a power semiconductor device of a resonant DC converter under conditions of small DC capacitance, its positive and negative half-wave resonant currents will become severely asymmetric. Directly applying traditional topology reconstruction fault-tolerant control methods will cause some power semiconductor devices to undergo hard switching, resulting in higher losses. Existing technologies rarely involve short-circuit fault-tolerant control methods for power semiconductor devices of resonant DC converters under conditions of small DC capacitance. Summary of the Invention
[0004] In order to solve the above technical problems, the present invention adopts the following technical solutions:
[0005] A short-circuit fault-tolerant control method for a power semiconductor device of a resonant DC converter, comprising:
[0006] Step 1, determining a power semiconductor device of a resonant DC converter that has a short-circuit fault;
[0007] Step 2: When one of the first power semiconductor device S1, the fourth power semiconductor device S4, the fifth power semiconductor device S5, and the eighth power semiconductor device S8 fails, perform the following operations:
[0008] Step 2.1, setting the on / off status of the other three power semiconductor devices;
[0009] Step 2.2, setting the positive half-wave and negative half-wave switching periods of the resonant DC converter;
[0010] Step 3: When one of the second power semiconductor device S2, the third power semiconductor device S3, the sixth power semiconductor device S6, and the seventh power semiconductor device S7 fails, perform the following operations:
[0011] Step 3.1, setting the on / off status of the other three power semiconductor devices;
[0012] Step 3.2, setting the positive half-wave and negative half-wave switching periods of the resonant DC converter;
[0013] The resonant DC converter includes a primary side H bridge, a high-voltage side resonant capacitor C rp , high-frequency transformer, low-voltage side resonant capacitor C rs The primary H-bridge includes the following: a high-voltage side DC capacitor C1, a first power semiconductor device S1 and a second power semiconductor device S2 connected in series, a third power semiconductor device S3 and a fourth power semiconductor device S4 connected in series; the secondary H-bridge includes the following: a fifth power semiconductor device S5 and a sixth power semiconductor device S6 connected in series, a seventh power semiconductor device S7 and an eighth power semiconductor device S8 connected in series, and a low-voltage side DC capacitor C2; the primary H-bridge AC side and the high-voltage side resonant capacitor C rp After being connected in series, they are connected to the primary side of the high-frequency transformer; the secondary side H bridge AC side and the low-voltage side resonant capacitor C rs After being connected in series, they are connected to the secondary side of the high-frequency transformer.
[0014] A short-circuit fault-tolerant control device for a power semiconductor device of a resonant DC converter, comprising:
[0015] a fault judgment module for judging the power semiconductor device of the resonant DC converter which has a circuit breaker fault;
[0016] The first execution module, when one of the first power semiconductor device S1, the fourth power semiconductor device S4, the fifth power semiconductor device S5, and the eighth power semiconductor device S8 fails, includes:
[0017] A first on-off state setting module, for setting the on-off states of the other three power semiconductor devices;
[0018] A first switching cycle setting module is used to set the positive half-wave and negative half-wave switching cycles of the resonant DC converter;
[0019] The second execution module, when one of the second power semiconductor device S2, the third power semiconductor device S3, the sixth power semiconductor device S6, and the seventh power semiconductor device S7 fails, includes:
[0020] A second on-off state setting module, for setting the on-off states of the other three power semiconductor devices;
[0021] A second switching cycle setting module is used to set the positive half-wave and negative half-wave switching cycles of the resonant DC converter;
[0022] The resonant DC converter includes a primary side H bridge, a high-voltage side resonant capacitor C rp , high-frequency transformer, low-voltage side resonant capacitor C rs The primary H-bridge includes the following: a high-voltage side DC capacitor C1, a first power semiconductor device S1 and a second power semiconductor device S2 connected in series, a third power semiconductor device S3 and a fourth power semiconductor device S4 connected in series; the secondary H-bridge includes the following: a fifth power semiconductor device S5 and a sixth power semiconductor device S6 connected in series, a seventh power semiconductor device S7 and an eighth power semiconductor device S8 connected in series, and a low-voltage side DC capacitor C2; the primary H-bridge AC side and the high-voltage side resonant capacitor C rp After being connected in series, they are connected to the primary side of the high-frequency transformer; the secondary side H bridge AC side and the low-voltage side resonant capacitor C rs After being connected in series, they are connected to the secondary side of the high-frequency transformer.
[0023] An electronic device comprises a memory, a processor and a computer program stored in the memory and executable on the processor. When the processor executes the program, the steps of the short-circuit fault-tolerant control method for a power semiconductor device of a resonant DC converter are implemented.
[0024] A non-transitory computer-readable storage medium stores a computer program, which, when executed by a processor, implements the steps of the short-circuit fault-tolerant control method for power semiconductor devices of a resonant DC converter.
[0025] The present invention has the following beneficial effects: Compared with existing technologies, the present invention's fault-tolerant control achieves fault-tolerant control of short-circuit faults in any power semiconductor device of a resonant DC converter by setting an asymmetric switching frequency, based on existing topological reconstruction. This enables soft switching of the resonant DC converter under short-circuit faults in any power semiconductor device without requiring additional hardware circuitry. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] Figure 1 It is the circuit topology of resonant DC converter;
[0027] Figure 2 This is a flow chart of the short-circuit fault-tolerant control method for power semiconductor devices of a resonant DC converter according to the present invention;
[0028] Figure 3 These are the high-frequency voltage and current waveforms of the resonant DC converter's second power semiconductor device S2 when it is short-circuited. DETAILED DESCRIPTION
[0029] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.
[0030] The resonant DC converter circuit topology of the present invention is as follows: Figure 1 As shown, it includes the primary side H bridge, high voltage side resonant capacitor C rp , high-frequency transformer, low-voltage side resonant capacitor C rs And the secondary side H bridge; wherein the primary side H bridge includes: the high voltage side DC capacitor C1, the first power semiconductor device S1 and the second power semiconductor device S2 connected in series, the third power semiconductor device S3 and the fourth power semiconductor device S4 connected in series; the secondary side H bridge includes: the fifth power semiconductor device S5 and the sixth power semiconductor device S6 connected in series, the seventh power semiconductor device S7 and the eighth power semiconductor device S8 connected in series, and the low voltage side DC capacitor C2; the primary side H bridge AC side and the high voltage side resonant capacitor C rp After being connected in series, they are connected to the primary side of the high-frequency transformer; the secondary side H bridge AC side and the low-voltage side resonant capacitor C rs After being connected in series, they are connected to the secondary side of the high-frequency transformer. The high-frequency transformer has a transformation ratio of n and a leakage inductance of L. r .
[0031] like Figure 2 Shown is a flow chart of the short-circuit fault-tolerant control method for power semiconductor devices of a resonant DC converter of the present invention.
[0032] Step 1, determining a power semiconductor device of a resonant DC converter that has a short-circuit fault;
[0033] Step 2: When one of the first power semiconductor device S1, the fourth power semiconductor device S4, the fifth power semiconductor device S5, and the eighth power semiconductor device S8 fails, perform the following operations:
[0034] Step 2.1, set the on / off status of the other three power semiconductor devices as follows:
[0035] When a short circuit fault occurs in the first power semiconductor device S1, the second power semiconductor device S2 is in the off state, the fifth power semiconductor device S5 is in the on state, and the sixth power semiconductor device S6 is in the off state;
[0036] When a short circuit fault occurs in the fourth power semiconductor device S4, the third power semiconductor device S3 is turned off, the eighth power semiconductor device S8 is turned on, and the seventh power semiconductor device S7 is turned off;
[0037] When a short circuit fault occurs in the fifth power semiconductor device S5, the sixth power semiconductor device S6 is turned off, the first power semiconductor device S1 is turned on, and the second power semiconductor device S2 is turned off;
[0038] When a short-circuit fault occurs in the eighth power semiconductor device S8 , the seventh power semiconductor device S7 is in the off state, the fourth power semiconductor device S4 is in the on state, and the third power semiconductor device S3 is in the off state.
[0039] Step 2.2, setting the positive half-wave and negative half-wave switching periods of the resonant DC converter, includes the following steps:
[0040] Step 2.2.1, calculate the positive half-wave amplitude and initial phase of the high-frequency current of the resonant DC converter, as shown in formula (1):
[0041] (1)
[0042] in, is the positive half-wave amplitude of the high-frequency current, is the initial phase of the high-frequency current positive half-wave, is the high-voltage side input current of the resonant DC converter, is the switching period of the resonant DC converter during normal operation, and The expression is as follows:
[0043] (2)
[0044] in, is the high-frequency transformer ratio.
[0045] Step 2.2.2, calculating the positive half-wave and negative half-wave switching periods of the resonant DC converter high-frequency current according to the positive half-wave amplitude and initial phase obtained in step 2.2.1;
[0046] According to the initial phase of the positive half-wave of the high-frequency current in formula (1), the positive half-wave and negative half-wave switching periods of the resonant DC converter are calculated, as shown in formula (3):
[0047] (3)
[0048] in, is the positive half-wave switching period, It is the negative half-wave switching cycle.
[0049] Step 2.2.3: Allocate the switching timing of the power semiconductor devices according to the positive half-wave and negative half-wave switching cycles obtained in step 2.2.2, as follows:
[0050] When the first power semiconductor device S1 or the fifth power semiconductor device S5 is short-circuited, if kt p +kt n ≤t<(k+1)t p +kt n (k is an integer with no clear physical meaning. As k increases, time gradually increases, and the semiconductor devices are periodically turned on and off). The fourth power semiconductor device S4 and the eighth power semiconductor device S8 are turned on, and the third power semiconductor device S3 and the seventh power semiconductor device S7 are turned off. If (k+1)t p +kt n ≤t<(k+1)t p +(k+1)t n , the third power semiconductor device S3 and the seventh power semiconductor device S7 are turned on; the fourth power semiconductor device S4 and the eighth power semiconductor device S8 are turned off.
[0051] When the fourth power semiconductor device S4 or the eighth power semiconductor device S8 is short-circuited, if kt p +kt n ≤t<(k+1)t p +kt n (k is an integer), the first power semiconductor device S1 and the fifth power semiconductor device S5 are turned on, and the second power semiconductor device S2 and the sixth power semiconductor device S6 are turned off; if (k+1)t p +kt n ≤t<(k+1)t p +(k+1)t n , the second power semiconductor device S2 and the sixth power semiconductor device S6 are turned on; the first power semiconductor device S1 and the fifth power semiconductor device S5 are turned off.
[0052] Step 3: When one of the second power semiconductor device S2, the third power semiconductor device S3, the sixth power semiconductor device S6, and the seventh power semiconductor device S7 fails, perform the following operations:
[0053] Step 3.1, set the on / off status of the other three power semiconductor devices as follows:
[0054] When a short circuit fault occurs in the second power semiconductor device S2, the first power semiconductor device S1 is in the off state, the sixth power semiconductor device S6 is in the on state, and the fifth power semiconductor device S5 is in the off state;
[0055] When a short circuit fault occurs in the third power semiconductor device S3, the fourth power semiconductor device S4 is in the off state, the seventh power semiconductor device S7 is in the on state, and the eighth power semiconductor device S8 is in the off state;
[0056] When a short circuit fault occurs in the sixth power semiconductor device S6, the fifth power semiconductor device S5 is turned off, the second power semiconductor device S2 is turned on, and the first power semiconductor device S1 is turned off;
[0057] When a short-circuit fault occurs in the seventh power semiconductor device S7 , the eighth power semiconductor device S8 is in the off state, the third power semiconductor device S3 is in the on state, and the fourth power semiconductor device S4 is in the off state.
[0058] Step 3.2, setting the positive half-wave and negative half-wave switching periods of the resonant DC converter, includes the following steps:
[0059] Step 3.2.1, calculate the negative half-wave amplitude and initial phase of the high-frequency current of the resonant DC converter, as shown in formula (4):
[0060] (4)
[0061] in, is the negative half-wave amplitude of the high-frequency current, is the initial phase of the negative half-wave of the high-frequency current, is the high-voltage side input current of the resonant DC converter, is the switching period of the resonant DC converter during normal operation, and The expression is as follows (5):
[0062] (5)
[0063] in, is the high-frequency transformer ratio.
[0064] Step 3.2.2, calculating the positive half-wave and negative half-wave switching periods of the resonant DC converter high-frequency current according to the negative half-wave amplitude and initial phase obtained in step 3.2.1;
[0065] According to the initial phase of the negative half-wave of the high-frequency current in formula (4), the positive half-wave and negative half-wave switching periods of the resonant DC converter are calculated, as shown in formula (6):
[0066] (6)
[0067] in, is the positive half-wave switching period, It is the negative half-wave switching cycle.
[0068] Step 3.2.3: Allocate the switching timing of the power semiconductor devices according to the positive half-wave and negative half-wave switching cycles obtained in step 3.2.2, as follows:
[0069] When the second power semiconductor device S2 or the sixth power semiconductor device S6 is short-circuited, kt p +kt n ≤t<(k+1)t p +kt n (k is an integer), the fourth power semiconductor device S4 and the eighth power semiconductor device S8 are turned on, and the third power semiconductor device S3 and the seventh power semiconductor device S7 are turned off; (k+1)t p +kt n ≤t<(k+1)t p +(k+1)t n , the third power semiconductor device S3 and the seventh power semiconductor device S7 are turned on; the fourth power semiconductor device S4 and the eighth power semiconductor device S8 are turned off.
[0070] When the third power semiconductor device S3 or the seventh power semiconductor device S7 is short-circuited, kt p +kt n ≤t<(k+1)t p +kt n (k is an integer), the first power semiconductor device S1 and the fifth power semiconductor device S5 are turned on, and the second power semiconductor device S2 and the sixth power semiconductor device S6 are turned off; (k+1)t p +kt n ≤t<(k+1)t p +(k+1)t n , the second power semiconductor device S2 and the sixth power semiconductor device S6 are turned on; the first power semiconductor device S1 and the fifth power semiconductor device S5 are turned off.
[0071] An embodiment of the present invention is as follows:
[0072] In this embodiment, the main circuit parameters of the resonant DC converter are shown in Table 1:
[0073] Table 1
[0074] The fault-tolerant control method is described below by taking a short-circuit fault of the second power semiconductor device S2 as an example.
[0075] When a short-circuit fault occurs in the second power semiconductor device S2 , the first power semiconductor device S1 is in the off state, the sixth power semiconductor device S6 is in the on state, and the fifth power semiconductor device S5 is in the off state.
[0076] Setting the positive and negative half-wave switching periods of the resonant DC converter. The calculation method includes the following steps:
[0077] (1) The calculation formula for the negative half-wave amplitude and initial phase of the high-frequency current is as shown in formula (4);
[0078] (2) Calculate the switching cycle;
[0079] The positive and negative half-wave switching periods of the resonant DC converter are calculated based on the initial phase of the negative half-wave of the high-frequency current in formula (4), as shown below:
[0080] ;
[0081] in, is the positive half-wave switching period, It is the negative half-wave switching cycle.
[0082] (3) Allocate the switching timing of power semiconductor devices as follows:
[0083] kt p +kt n ≤t<(k+1)t p +kt n (k is an integer), the fourth power semiconductor device S4 and the eighth power semiconductor device S8 are turned on, and the third power semiconductor device S3 and the seventh power semiconductor device S7 are turned off; (k+1)t p +kt n ≤t<(k+1)t p +(k+1)t n , the third power semiconductor device S3 and the seventh power semiconductor device S7 are turned on; the fourth power semiconductor device S4 and the eighth power semiconductor device S8 are turned off.
[0084] Figure 3 Figure 1 shows the high-frequency voltage and current waveforms when the second power semiconductor device S2 of the resonant DC converter experiences a short-circuit fault. When the second power semiconductor device S2 experiences a short-circuit fault, the fault-tolerant control method proposed in this invention enables soft switching of all power semiconductor devices in the resonant DC converter.
[0085] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Thus, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROMs, optical storage, etc.) containing computer-usable program code. The solutions in the embodiments of the present invention may be implemented using various computer languages.
[0086] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowcharts and / or block diagrams, as well as combinations of processes and / or blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowcharts and / or block diagrams. Figure 1 a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.
[0087] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1 The function specified in one or more boxes.
[0088] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing the instructions executed on the computer or other programmable device for implementing the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.
[0089] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.
[0090] Obviously, those skilled in the art may make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if such changes and modifications fall within the scope of the claims and their equivalents, the present invention is intended to include such changes and modifications.
[0091] The above descriptions are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention's description and drawings, or directly or indirectly applied to other related system fields, are also included in the patent protection scope of the present invention.
[0092] The contents not described in detail in the specification of the present invention belong to the prior art known to those skilled in the art.
Claims
1. A short-circuit fault-tolerant control method for power semiconductor devices of a resonant DC converter, characterized in that: include: Step 1, determining a power semiconductor device of a resonant DC converter that has a short-circuit fault; Step 2: When one of the first power semiconductor device S1, the fourth power semiconductor device S4, the fifth power semiconductor device S5, and the eighth power semiconductor device S8 fails, perform the following operations: Step 2.1, setting the on / off status of the other three power semiconductor devices; Step 2.2, setting the positive half-wave and negative half-wave switching periods of the resonant DC converter; Step 3: When one of the second power semiconductor device S2, the third power semiconductor device S3, the sixth power semiconductor device S6, and the seventh power semiconductor device S7 fails, perform the following operations: Step 3.1, setting the on / off status of the other three power semiconductor devices; Step 3.2, setting the positive half-wave and negative half-wave switching periods of the resonant DC converter; The resonant DC converter includes a primary side H bridge, a high-voltage side resonant capacitor C rp , high-frequency transformer, low-voltage side resonant capacitor C rs The primary H-bridge includes the following: a high-voltage side DC capacitor C1, a first power semiconductor device S1 and a second power semiconductor device S2 connected in series, a third power semiconductor device S3 and a fourth power semiconductor device S4 connected in series; the secondary H-bridge includes the following: a fifth power semiconductor device S5 and a sixth power semiconductor device S6 connected in series, a seventh power semiconductor device S7 and an eighth power semiconductor device S8 connected in series, and a low-voltage side DC capacitor C2; the primary H-bridge AC side and the high-voltage side resonant capacitor C rp After connecting in series, it is connected to the primary side of the high-frequency transformer; the secondary side H bridge AC side and the low-voltage side resonant capacitor C rs After being connected in series, they are connected to the secondary side of the high-frequency transformer.
2. The short-circuit fault-tolerant control method for power semiconductor devices of a resonant DC converter according to claim 1, characterized in that: Step 2.1 includes: When a short circuit fault occurs in the first power semiconductor device S1, the second power semiconductor device S2 is in the off state, the fifth power semiconductor device S5 is in the on state, and the sixth power semiconductor device S6 is in the off state; When a short circuit fault occurs in the fourth power semiconductor device S4, the third power semiconductor device S3 is turned off, the eighth power semiconductor device S8 is turned on, and the seventh power semiconductor device S7 is turned off; When a short circuit fault occurs in the fifth power semiconductor device S5, the sixth power semiconductor device S6 is turned off, the first power semiconductor device S1 is turned on, and the second power semiconductor device S2 is turned off; When a short-circuit fault occurs in the eighth power semiconductor device S8 , the seventh power semiconductor device S7 is in the off state, the fourth power semiconductor device S4 is in the on state, and the third power semiconductor device S3 is in the off state.
3. The short-circuit fault-tolerant control method for power semiconductor devices of a resonant DC converter according to claim 1, characterized in that: Step 2.2 includes: Step 2.2.1, calculate the positive half-wave amplitude and initial phase of the high-frequency current of the resonant DC converter: Step 2.2.2, calculating the positive half-wave and negative half-wave switching periods of the resonant DC converter high-frequency current according to the positive half-wave amplitude and initial phase obtained in step 2.2.1; Step 2.2.3, assign the switching timing of the power semiconductor devices according to the positive half-wave and negative half-wave switching cycles obtained in 2.2.
2.
4. The short-circuit fault-tolerant control method for power semiconductor devices of a resonant DC converter according to claim 3, characterized in that: In step 2.2.1, the calculation formula is as follows: （1） in, is the positive half-wave amplitude of the high-frequency current, is the initial phase of the high-frequency current positive half-wave, is the high-voltage side input current of the resonant DC converter, is the switching period of the resonant DC converter during normal operation, and The expression is as follows: （2） in, is the high-frequency transformer ratio.
5. The short-circuit fault-tolerant control method for power semiconductor devices of a resonant DC converter according to claim 4, characterized in that: Step 2.2.2 includes: According to the initial phase of the positive half-wave of the high-frequency current in formula (1), the positive half-wave and negative half-wave switching periods of the resonant DC converter are calculated, as shown in formula (3): （3） in, is the positive half-wave switching period, It is the negative half-wave switching cycle.
6. The short-circuit fault-tolerant control method for power semiconductor devices of a resonant DC converter according to claim 5, characterized in that: Step 2.2.3 includes: When the first power semiconductor device S1 or the fifth power semiconductor device S5 is short-circuited, if kt p +kt n ≤t<(k+1)t p +kt n (k is an integer with no clear physical meaning. As k increases, time gradually increases, and the semiconductor devices are periodically turned on and off). The fourth power semiconductor device S4 and the eighth power semiconductor device S8 are turned on, and the third power semiconductor device S3 and the seventh power semiconductor device S7 are turned off. If (k+1)t p +kt n ≤t<(k+1)t p +(k+1)t n , the third power semiconductor device S3 and the seventh power semiconductor device S7 are turned on; the fourth power semiconductor device S4 and the eighth power semiconductor device S8 are turned off; When the fourth power semiconductor device S4 or the eighth power semiconductor device S8 is short-circuited, if kt p +kt n ≤t<(k+1)t p +kt n (k is an integer), the first power semiconductor device S1 and the fifth power semiconductor device S5 are turned on, and the second power semiconductor device S2 and the sixth power semiconductor device S6 are turned off; if (k+1)t p +kt n ≤t<(k+1)t p +(k+1)t n , the second power semiconductor device S2 and the sixth power semiconductor device S6 are turned on; the first power semiconductor device S1 and the fifth power semiconductor device S5 are turned off.
7. The short-circuit fault-tolerant control method for power semiconductor devices of a resonant DC converter according to claim 1, characterized in that: Step 3.1 includes: When a short circuit fault occurs in the second power semiconductor device S2, the first power semiconductor device S1 is in the off state, the sixth power semiconductor device S6 is in the on state, and the fifth power semiconductor device S5 is in the off state; When a short circuit fault occurs in the third power semiconductor device S3, the fourth power semiconductor device S4 is in the off state, the seventh power semiconductor device S7 is in the on state, and the eighth power semiconductor device S8 is in the off state; When a short circuit fault occurs in the sixth power semiconductor device S6, the fifth power semiconductor device S5 is turned off, the second power semiconductor device S2 is turned on, and the first power semiconductor device S1 is turned off; When a short-circuit fault occurs in the seventh power semiconductor device S7 , the eighth power semiconductor device S8 is in the off state, the third power semiconductor device S3 is in the on state, and the fourth power semiconductor device S4 is in the off state.
8. The short-circuit fault-tolerant control method for power semiconductor devices of a resonant DC converter according to claim 1, characterized in that: Step 3.2 includes: Step 3.2.1, calculate the negative half-wave amplitude and initial phase of the high-frequency current of the resonant DC converter; Step 3.2.2, calculating the positive half-wave and negative half-wave switching periods of the resonant DC converter high-frequency current according to the negative half-wave amplitude and initial phase obtained in step 3.2.1; Step 3.2.3, assign the switching timing of the power semiconductor devices according to the positive half-wave and negative half-wave switching cycles obtained in 3.2.
2.
9. The short-circuit fault-tolerant control method for power semiconductor devices of a resonant DC converter according to claim 8, characterized in that: In step 3.2.1, the calculation formula is as follows: （4） in, is the negative half-wave amplitude of the high-frequency current, is the initial phase of the negative half-wave of the high-frequency current, is the high-voltage side input current of the resonant DC converter, is the switching period of the resonant DC converter during normal operation, and The expression is as follows (5): （5） in, is the high-frequency transformer ratio.
10. The short-circuit fault-tolerant control method for power semiconductor devices of a resonant DC converter according to claim 9, characterized in that: Step 3.2.2 includes: According to the initial phase of the negative half-wave of the high-frequency current in formula (4), the positive half-wave and negative half-wave switching periods of the resonant DC converter are calculated, as shown in formula (6): （6） in, is the positive half-wave switching period, It is the negative half-wave switching cycle.
11. The short-circuit fault-tolerant control method for power semiconductor devices of a resonant DC converter according to claim 10, characterized in that: Step 3.2.3 includes: When the second power semiconductor device S2 or the sixth power semiconductor device S6 is short-circuited, kt p +kt n ≤t<(k+1)t p +kt n (k is an integer), the fourth power semiconductor device S4 and the eighth power semiconductor device S8 are turned on, and the third power semiconductor device S3 and the seventh power semiconductor device S7 are turned off; (k+1)t p +kt n ≤t<(k+1)t p +(k+1)t n , the third power semiconductor device S3 and the seventh power semiconductor device S7 are turned on; the fourth power semiconductor device S4 and the eighth power semiconductor device S8 are turned off; When the third power semiconductor device S3 or the seventh power semiconductor device S7 is short-circuited, kt p +kt n ≤t<(k+1)t p +kt n (k is an integer), the first power semiconductor device S1 and the fifth power semiconductor device S5 are turned on, and the second power semiconductor device S2 and the sixth power semiconductor device S6 are turned off; (k+1)t p +kt n ≤t<(k+1)t p +(k+1)t n , the second power semiconductor device S2 and the sixth power semiconductor device S6 are turned on; the first power semiconductor device S1 and the fifth power semiconductor device S5 are turned off.
12. A short-circuit fault-tolerant control device for a resonant DC converter power semiconductor device, characterized in that: include: a fault judgment module for judging the power semiconductor device of the resonant DC converter which has a circuit breaker fault; The first execution module, when one of the first power semiconductor device S1, the fourth power semiconductor device S4, the fifth power semiconductor device S5, and the eighth power semiconductor device S8 fails, includes: A first on-off state setting module, for setting the on-off states of the other three power semiconductor devices; A first switching cycle setting module is used to set the positive half-wave and negative half-wave switching cycles of the resonant DC converter; The second execution module, when one of the second power semiconductor device S2, the third power semiconductor device S3, the sixth power semiconductor device S6, and the seventh power semiconductor device S7 fails, includes: A second on-off state setting module, for setting the on-off states of the other three power semiconductor devices; A second switching cycle setting module is used to set the positive half-wave and negative half-wave switching cycles of the resonant DC converter; The resonant DC converter includes a primary side H bridge, a high-voltage side resonant capacitor C rp , high-frequency transformer, low-voltage side resonant capacitor C rs The primary H-bridge includes the following: a high-voltage side DC capacitor C1, a first power semiconductor device S1 and a second power semiconductor device S2 connected in series, a third power semiconductor device S3 and a fourth power semiconductor device S4 connected in series; the secondary H-bridge includes the following: a fifth power semiconductor device S5 and a sixth power semiconductor device S6 connected in series, a seventh power semiconductor device S7 and an eighth power semiconductor device S8 connected in series, and a low-voltage side DC capacitor C2; the primary H-bridge AC side and the high-voltage side resonant capacitor C rp After connecting in series, it is connected to the primary side of the high-frequency transformer; the secondary side H bridge AC side and the low-voltage side resonant capacitor C rs After being connected in series, they are connected to the secondary side of the high-frequency transformer.
13. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the program, the steps of the short-circuit fault-tolerant control method for a resonant DC converter power semiconductor device are implemented as described in any one of claims 1 to 11.
14. A non-transitory computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the short-circuit fault-tolerant control method for a power semiconductor device of a resonant DC converter according to any one of claims 1 to 11 are implemented.