Semiconductor wafer chemical gold groove
By designing a semiconductor wafer chemical gold tank with reciprocating mechanism and heating plate, the problem of poor immersion effect caused by static immersion is solved, and the semiconductor wafer is fully immersed and constant temperature control is achieved, and the gold plating and disassembly process is simplified. .
Patent Information
- Application Number
- CN202323412291.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-13
- Publication Date
- 2024-12-06
- Estimated Expiration
- 2033-12-13
AI Technical Summary
The existing semiconductor wafers are immersed in static soaking, which has poor soaking effect and is inconvenient to post-golding.
A semiconductor wafer chemical gold tank is designed, including the gold tank main body, support legs, slide rods, slide bars, connecting rods, reciprocating mechanisms, heating plates, controllers and metal mesh. Through reciprocating movement and the use of heating plates, the Fully immersion and constant temperature control of semiconductor wafers.
It improves the soaking effect, facilitates the post-golding process, and simplifies the wafer disassembly process.
Smart Images
Figure CN222119390U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of chemical gold tanks for semiconductor wafers, in particular to a chemical gold tank for semiconductor wafers. Background Art
[0002] The semiconductor wafer chemical gold bath is designed for the need to chemically plate a metal on the wafer to meet the needs of product packaging and wiring in the later stage, and other functions. When the semiconductor wafer chemical gold bath is used, the semiconductor wafer is placed in the chemical gold bath, and then chemicals are added for immersion to facilitate the later gold plating.
[0003] The existing semiconductor wafer immersion is static immersion, which has poor immersion effect and is inconvenient for subsequent gold plating. Utility Model Content
[0004] The utility model aims to solve the shortcomings of the existing semiconductor wafer immersion method, that is, static immersion, poor immersion effect and inconvenience for subsequent gold plating, and proposes a semiconductor wafer chemical gold bath.
[0005] In order to achieve the above purpose, the utility model adopts the following technical solutions:
[0006] A chemical gold trough for semiconductor wafers comprises a gold trough main body, four supporting legs are arranged at the bottom of the gold trough main body, two supporting slide bars are fixedly installed in the gold trough main body, two slide bars are slidably installed on the two supporting slide bars, a common connecting rod is installed between the two slide bars, a reciprocating mechanism is arranged at the bottom of the gold trough main body, the reciprocating mechanism is connected to the connecting rod, a heating plate is arranged on the inner wall of the gold trough main body, a common supporting plate is installed on the top of the two slide bars, four vertical rods are installed on the top of the supporting plate, and a common placing mechanism is installed on the top of the four vertical rods.
[0007] Preferably, a sewage outlet is arranged on the bottom side of the gold trough body, a controller is arranged on the front side of the gold trough body, a temperature sensor is connected to the controller, and the temperature sensor is located inside the gold trough body.
[0008] Preferably, the reciprocating mechanism includes a rotating shaft, which is rotatably mounted at the bottom center of the gold trough body, a cam is mounted on the top of the rotating shaft, a swing rod is rotatably mounted at the offset position of the cam, and the swing rod is rotatably connected to the bottom of the connecting rod.
[0009] Preferably, a gear transmission case is provided at the bottom of the gold trough body, the rotating shaft is connected to the output shaft of the gear transmission case, and a motor is provided on the gear transmission case.
[0010] Preferably, the placement mechanism includes a metal mesh, two handle plates are installed on the top of the metal mesh, two positioning grooves are provided at the bottom of the two handle plates, metal rods are fixedly installed on the top of the four vertical rods, the metal rods are adapted to the positioning grooves, and magnet blocks are provided on the inner walls of the positioning grooves, and the magnet blocks are attracted to the metal rods.
[0011] In the utility model, the beneficial effects of the chemical gold bath for semiconductor wafers are:
[0012] In this scheme, liquid medicine is stored in the gold tank body, and semiconductor wafers are placed in the metal mesh, so that the semiconductor wafers are immersed in the liquid medicine, and the liquid medicine does not cover the handle plate. The starting motor drives the rotating shaft to rotate through the gear box, and the rotating shaft drives the cam to rotate. The cam drives the swing rod to swing back and forth, and the swing rod drives the connecting rod to move back and forth left and right. The connecting rod drives two slide bars to slide back and forth on two supporting slide bars. The two slide bars drive the metal mesh to move back and forth through the supporting plate, four vertical rods and two handle plates, so that the semiconductor wafers can be fully immersed.
[0013] The heating plate provided in this scheme can heat the medicine solution to improve the immersion effect. The controller can be used to set the constant temperature for immersion. After the immersion is completed, the two handle plates are pulled to drive the metal mesh to move upward and leave the gold tank body, which is convenient for disassembly of the semiconductor wafer.
[0014] The utility model has a simple structure, can improve the soaking effect, and is convenient for disassembling the semiconductor wafer after soaking. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 This is a schematic diagram of the structure of a chemical gold bath for semiconductor wafers proposed by the utility model;
[0016] Figure 2 The utility model proposed Figure 1 A schematic cross-sectional structure diagram of;
[0017] Figure 3 The utility model is a schematic structural diagram of part A of a chemical gold bath for semiconductor wafers.
[0018] In the figure: 1. gold trough body; 2. sewage outlet; 3. supporting slide rod; 4. slide bar; 5. connecting rod; 6. rotating shaft; 7. motor; 8. cam; 9. swing rod; 10. support plate; 11. vertical rod; 12. metal mesh; 13. heating plate; 14. handle plate; 15. positioning groove; 16. magnet block; 17. metal rod; 18. controller. DETAILED DESCRIPTION
[0019] The technical solution of this embodiment will be clearly and completely described below in conjunction with the drawings in this embodiment. Obviously, the described embodiment is only a part of this embodiment, rather than all of the embodiments.
[0020] Embodiment 1
[0021] Reference Figure 1-Figure 3 A chemical gold tank for semiconductor wafers comprises a gold tank body 1, the inner liner of the gold tank body 1 is designed to be made of SUS316L, the surface is electrostatically sandblasted, and then Teflon (PTFE) acid- and alkali-resistant anti-precipitation material is sprayed, four supporting legs are arranged at the bottom of the gold tank body 1, two supporting slide bars 3 are fixedly installed in the gold tank body 1, two slide bars 4 are slidably installed on the two supporting slide bars 3, and the same connecting rod 5 is installed between the two slide bars 4, a reciprocating mechanism is arranged at the bottom of the gold tank body 1, and the reciprocating mechanism is connected to the connecting rod 5, a heating plate 13 is arranged on the inner wall of the gold tank body 1, the top of the two slide bars 4 is installed with the same supporting plate 10, the top of the supporting plate 10 is installed with four vertical rods 11, and the top of the four vertical rods 11 is installed with the same placing mechanism.
[0022] In this embodiment, a sewage outlet 2 is provided at the bottom side of the gold trough body 1, and a controller 18 is provided at the front side of the gold trough body 1. A temperature sensor is connected to the controller 18, and the temperature sensor is located inside the gold trough body 1; the heating temperature of the medicine solution is 75-85°C.
[0023] In this embodiment, the reciprocating mechanism includes a rotating shaft 6, which is rotatably installed at the bottom center position of the gold trough body 1. A cam 8 is installed on the top of the rotating shaft 6. A swing rod 9 is rotatably installed at the offset position of the cam 8. The swing rod 9 is rotatably connected to the bottom of the connecting rod 5.
[0024] In this embodiment, a gearbox is disposed at the bottom of the gold trough body 1 , the rotating shaft 6 is connected to the output shaft of the gearbox, and a motor 7 is disposed on the gearbox.
[0025] In this embodiment, the placement mechanism includes a metal mesh 12, two handle plates 14 are installed on the top of the metal mesh 12, two positioning grooves 15 are provided at the bottom of the two handle plates 14, and metal rods 17 are fixedly installed on the tops of the four vertical rods 11. The metal rods 17 are adapted to the positioning grooves 15, and magnet blocks 16 are provided on the inner walls of the positioning grooves 15, and the magnet blocks 16 are attracted to the metal rods 17.
[0026] Working principle: when in use, turn on the power supply and controller 18, the controller 18 can perform electrical control, which is the prior art and will not be described in detail here. The gold trough main body 1 stores medicine solution, and the semiconductor wafer is placed in the metal mesh 12, so that the semiconductor wafer is immersed in the medicine solution, and the medicine solution does not cover the handle plate 14. The starting motor 7 drives the rotating shaft 6 to rotate through the gear box, and the rotating shaft 6 drives the cam 8 to rotate. The cam 8 drives the swing rod 9 to swing back and forth, and the swing rod 9 drives the connecting rod 5 to reciprocate left and right. The connecting rod 5 drives the two slide bars 4 to slide back and forth on the two supporting slide bars 3. The two slide bars 4 drive the metal mesh 12 to reciprocate through the support plate 10, the four vertical rods 11 and the two handle plates 14, so that the semiconductor wafer can be fully immersed. The set heating plate 13 can heat the medicine solution to improve the immersion effect. The constant temperature immersion can be set through the controller 18. After the immersion is completed, the two handle plates 14 are pulled to drive the metal mesh 12 to move upward and leave the gold trough main body 1.
[0027] Embodiment 2
[0028] The difference between Example 2 and Example 1 is that: multiple dividing nets are arranged in the metal net 12, and the dividing nets are made of metal material. The arranged dividing nets can store semiconductor wafers separately, and can store semiconductor wafers of different sizes. This application includes all the structural shapes, sizes and materials of Example 1. In order to meet the specific usage conditions, they can all be selected and adjusted. The accompanying drawings are all schematic structural diagrams, and the specific actual sizes can be appropriately adjusted.
[0029] The above is only a preferred specific implementation of this embodiment, but the protection scope of this embodiment is not limited to this. Any technician familiar with the technical field can make equivalent replacements or changes based on the technical solution and utility model concept of this embodiment within the technical scope disclosed in this embodiment, which should be covered by the protection scope of this embodiment.
Claims
1. A semiconductor wafer chemical gold bath, comprising a gold bath body (1), the bottom of the gold bath body (1) being provided with four supporting legs, characterized in that: Two supporting slide bars (3) are fixedly installed in the gold trough body (1), two slide bars (4) are slidably installed on the two supporting slide bars (3), and a common connecting rod (5) is installed between the two slide bars (4). A reciprocating mechanism is arranged at the bottom of the gold trough body (1), and the reciprocating mechanism is connected to the connecting rod (5). A heating plate (13) is arranged on the inner wall of the gold trough body (1), and a common supporting plate (10) is installed on the top of the two slide bars (4). Four vertical rods (11) are installed on the top of the supporting plate (10), and a common placing mechanism is installed on the top of the four vertical rods (11).
2. A semiconductor wafer chemical gold bath according to claim 1, characterized in that: The reciprocating mechanism comprises a rotating shaft (6), the rotating shaft (6) is rotatably mounted at the bottom center position of the gold slot body (1), a cam (8) is mounted on the top of the rotating shaft (6), a swing rod (9) is rotatably mounted at the offset position of the cam (8), and the swing rod (9) is rotatably connected to the bottom of the connecting rod (5).
3. A semiconductor wafer chemical gold bath according to claim 1, characterized in that: A gearbox is provided at the bottom of the gold trough body (1); the rotating shaft (6) is connected to the output shaft of the gearbox; and a motor (7) is provided on the gearbox.
4. The semiconductor wafer chemical gold bath according to claim 1, characterized in that: The placement mechanism comprises a metal mesh (12), two handle plates (14) are installed on the top of the metal mesh (12), two positioning grooves (15) are provided at the bottom of the two handle plates (14), and metal rods (17) are fixedly installed on the tops of the four vertical rods (11), and the metal rods (17) are adapted to the positioning grooves (15).
5. A semiconductor wafer chemical gold bath according to claim 4, characterized in that: A magnet block (16) is arranged on the inner wall of the positioning groove (15), and the magnet block (16) is attracted to the metal rod (17).
6. The semiconductor wafer chemical gold bath according to claim 1, characterized in that: The bottom side of the gold trough body (1) is provided with a sewage outlet (2), the front side of the gold trough body (1) is provided with a controller (18), the controller (18) is connected to a temperature sensor, and the temperature sensor is located inside the gold trough body (1).