Semiconductor laser packaging module

Abstract

The utility model discloses a semiconductor laser packaging module. The semiconductor laser packaging module comprises a pin, a tube socket, a tube tongue, a heat sink and a laser chip, a first connecting layer is arranged between the laser chip and the heat sink; a second connecting layer is arranged between the heat sink and the tube tongue; the thermal resistance of the first connecting layer is less than or equal to that of the heat sink; the thermal resistance of the second connecting layer is smaller than or equal to that of the tube base; the thermal resistance of the second connecting layer is less than or equal to that of the first connecting layer; the thermal resistance of the second connecting layer is smaller than or equal to the thermal resistance of the tube tongue, thermal resistance bottleneck points of the laser module are reduced, the total thermal resistance of the laser module is reduced, and the junction temperature of the laser chip is further reduced, so that the thermal mismatch and temperature rise amplitude of the laser chip are reduced, the piezoelectric polarization and quantum restriction effect of the laser chip are reduced, and the reliability of the laser chip is improved. The quantum confinement effect, the radiative recombination efficiency and the heat reversal current density of the laser chip are improved, the mode hopping proportion is reduced, and the slope efficiency reduction in the aging process is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor optoelectronic devices, in particular to a semiconductor laser packaging module. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor ultraviolet lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization. There are great differences between lasers and nitride semiconductor light-emitting diodes. 1) Lasers are generated by stimulated radiation of carriers, with a small half-width of the spectrum and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneous radiation, and the output power of a single light-emitting diode is in the mW level; 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect; 3) Light-emitting diodes The tube spontaneously radiates incoherent light from high energy level to low energy level without any external influence, while the laser radiates stimulated transition. The energy of the induced photon should be equal to the difference in energy levels of the electron transition, generating completely identical coherent light of the photon and the induced photon; 4) Different principles: under the action of external voltage, the electron-hole transition of the light-emitting diode produces radiative recombination luminescence, while the laser needs the lasing conditions to be met before it can be lased. The carrier inversion distribution in the active area must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. The threshold condition is met so that the gain is greater than the loss, and finally the laser is output. Nitride semiconductor ultraviolet lasers have the following problems: the semiconductor laser chip has a large driving current and generates a lot of heat, which leads to a large total thermal resistance and junction temperature of the laser module, causing the temperature rise of the laser chip to be too large and the thermal mismatch to be too large, causing the piezoelectric polarization to rise and the quantum confined Stark effect to be too large, thus affecting the quantum confinement effect and radiation recombination efficiency of the laser, and thus reducing the thermal reversal current density and slope efficiency. Utility Model Content

[0003] In order to solve the above technical problems, the utility model provides a semiconductor laser packaging module, including a pin, a tube base, a tube tongue, a heat sink and a laser chip; a first connecting layer is provided between the laser chip and the heat sink; a second connecting layer is provided between the heat sink and the tube tongue; the thermal resistance of the first connecting layer is less than or equal to the thermal resistance of the heat sink; the thermal resistance of the second connecting layer is less than or equal to the thermal resistance of the tube base; the thermal resistance of the second connecting layer is less than or equal to the thermal resistance of the first connecting layer; and the thermal resistance of the second connecting layer is less than or equal to the thermal resistance of the tube tongue.

[0004] By designing the thermal resistance of the tube base, tube tongue and heat sink of the semiconductor laser, the thermal resistance bottleneck of the laser module is reduced, the total thermal resistance of the laser module is reduced, and then the junction temperature of the laser chip is reduced, thereby reducing the thermal mismatch and temperature rise of the laser chip, reducing the piezoelectric polarization and quantum confined Stark effect of the laser chip, and improving the quantum confinement effect, radiation recombination efficiency and thermal inversion current density of the laser chip, and reducing the mode hopping ratio and improving the slope efficiency decline of the aging process.

[0005] Specifically, the materials of the first connection layer and the second connection layer include: gold-tin alloy, gold, tin, copper, silver, aluminum, gallium, iron, silicon, phosphorus, silver glue, platinum titanium Any one or more combinations of alloy, titanium, platinum, nickel, chromium, niobium, palladium, rhodium, nickel-gold alloy or molybdenum. Different materials or material combinations are used to make the first connection layer and the second connection layer have different thermal resistances.

[0006] Specifically, the packaging forms of semiconductor laser modules include: plastic packaging, To-CAN can packaging or COS packaging. Depending on the selected packaging method, the laser module will have different characteristics.

[0007] Specifically, the materials of the tube tongue and the tube seat include any one or more combinations of copper, aluminum, silver, gold, chromium, nickel, carbon, stainless steel, palladium, titanium, zirconium, tantalum, niobium, vanadium, hafnium, gallium, iron, silicon, phosphorus, copper plated with nickel, copper plated with palladium, copper plated with nickel / palladium, iron plated with nickel, iron plated with palladium, iron plated with nickel / palladium, iron clad copper plated with nickel, iron clad copper plated with palladium, iron clad copper plated with nickel / palladium, copper plated with palladium / nickel, iron plated with palladium / nickel, iron clad copper plated with palladium / nickel, kovar plated with palladium, kovar plated with nickel, kovar plated with nickel / palladium, kovar plated with palladium / nickel, copper tungsten, beryllium oxide, kovar, iron, copper / iron / copper composite material, copper / iron composite material, copper / aluminum composite material, and iron clad copper. Different materials or material combinations are used to make the tube tongue and the tube seat have different thermal resistances.

[0008] Specifically, the heat sink material includes silicon carbide, copper / silicon carbide composite structure, copper / silicon carbide / gold tin, copper / silicon carbide / copper composite structure, copper / aluminum aluminum nitride composite structure, copper / aluminum aluminum nitride / copper composite structure, copper / aluminum aluminum nitride / gold tin Composite knot Structure, gold-tin, aluminum nitride, diamond, copper / diamond composite structure, copper / diamond / copper composite structure, copper / diamond / gold-tin composite structure, aluminum nitride single-sided copper, aluminum nitride double-sided copper, silicon carbide single-sided copper, silicon carbide double-sided copper, diamond single-sided copper, diamond double-sided copper, titanium, zirconium, tantalum, niobium, vanadium, hafnium, aluminum nitride / zirconium / copper composite structure, aluminum nitride / tantalum / copper composite structure, aluminum nitride / niobium / copper composite structure, aluminum nitride / vanadium / copper composite structure, aluminum nitride / hafnium / copper composite structure, aluminum nitride / zirconium / niobium / copper composite structure, aluminum nitride / niobium / vanadium / copper composite structure, silicon, copper tungsten, titanium tungsten, copper, beryllium oxide, gallium nitride, gallium arsenide, indium phosphide, molybdenum, any one or more combinations thereof, using different materials or material combinations to make the heat sink have different thermal resistances.

[0009] Specifically, the laser chips include gallium nitride-based laser chips, gallium arsenide-based laser chips, indium phosphide-based laser chips, aluminum nitride-based laser chips and indium gallium nitride-based laser chips, and the wavelength of the laser chips covers 200nm to 3000nm.

[0010] Specifically, the thermal resistance calculus curve distribution of the first connection layer is U-shaped distribution; the thermal resistance calculus distribution of the second connection layer is U-shaped distribution.

[0011] Specifically, the thermal resistance calculus curve distribution of the heat sink includes: W-shape, U-shape, arc-shape, curve-shape or multi-curve-shape.

[0012] Specifically, the thermal resistance calculus curve distribution of the tube tongue includes: U-shape, W-shape, arc shape or curve shape.

[0013] By controlling the thermal resistance calculus curve of each component in the semiconductor laser, users have more options; by selecting a combination of components with different thermal resistance calculus curves, the semiconductor laser has different thermal resistance performance.

[0014] In summary, the beneficial effects of the present invention compared with the prior art are as follows:

[0015] Reduce the thermal resistance bottleneck of the laser module, reduce the total thermal resistance of the laser module, and then reduce the junction temperature of the laser chip, thereby reducing the thermal mismatch and temperature rise of the laser chip, reducing the piezoelectric polarization and quantum confined Stark effect of the laser chip, and improving the quantum confinement effect, radiation recombination efficiency and thermal reversal current density of the laser chip, and reducing the mode hopping ratio and improving the slope efficiency decline of the aging process. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate the embodiments and are used together with the description to explain the principles of the utility model. It will be easy to recognize other embodiments and many expected advantages of the embodiments because they become better understood by reference to the following detailed description. Other features, objects and advantages of the present application will become more apparent by reading the detailed description of the non-limiting embodiments made with reference to the following drawings:

[0017] Figure 1 is a structural schematic diagram of a semiconductor laser packaging module according to an embodiment of the application;

[0018] Figure 2 It is a thermal resistance calculus curve diagram of each component when a semiconductor laser packaging module adopts To-φ1 and COS packaging according to the first specific embodiment of the application;

[0019] Figure 3 It is a thermal resistance calculus curve diagram of each component when a semiconductor laser packaging module adopts To-φ2 packaging according to the second specific embodiment of the application;

[0020] Figure 4 It is a thermal resistance calculus curve diagram of each component when a semiconductor laser packaging module adopts To-φ1 and COS packaging according to the third specific embodiment of the application;

[0021] Figure 5 is a thermal resistance calculus curve diagram of each component of a semiconductor laser packaging module according to the fourth specific embodiment of the application;

[0022] Figure 6 It is a thermal resistance calculus curve diagram of each component of a semiconductor laser packaging module according to the fifth specific embodiment of the application.

[0023] The meaning of the numbers in the figure are: 100, pin; 101, tube seat; 102, tube tongue; 103, heat sink; 104, laser chip; 105, first connection layer; 106, second connection layer. DETAILED DESCRIPTION

[0024] In the description of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present invention.

[0025] In the present invention, unless otherwise clearly specified and limited, the terms "installation", "installation", "connection", "fixation" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0026] The present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant utility model, rather than to limit the utility model. It is also necessary to explain that, for ease of description, only the parts related to the relevant utility model are shown in the accompanying drawings.

[0027] Figure 1 is a schematic structural diagram of a semiconductor laser packaging module according to an embodiment of the application, such as Figure 1 As shown, the laser module includes a pin 100, a tube base 101, a tube tongue 102, a heat sink 103 and a laser chip 104; a first connection layer 105 is provided between the laser chip 104 and the heat sink 103; a second connection layer 106 is provided between the heat sink 103 and the tube tongue 102; the thermal resistance of the first connection layer 105 is less than or equal to the thermal resistance of the heat sink 103; the thermal resistance of the second connection layer 106 is less than or equal to the thermal resistance of the tube base 101; the thermal resistance of the second connection layer 106 is less than or equal to the thermal resistance of the first connection layer 105; and the thermal resistance of the second connection layer 106 is less than or equal to the thermal resistance of the tube tongue 102.

[0028] In actual use, in order to control the calorific value of each component to achieve the expected technical effect, each component can be formed by using different material combinations. Among them, the materials of the first connection layer and the second connection layer include: gold-tin alloy, gold, tin, copper, silver, aluminum, gallium, iron, silicon, phosphorus, silver glue, titanium-platinum-gold alloy, titanium, platinum, nickel, chromium, niobium, palladium, rhodium, nickel-gold alloy or any one or more combinations of molybdenum. Different materials or material combinations are used to make the first connection layer and the second connection layer have different thermal resistances.

[0029] The materials of the tube tongue and the tube seat include any one or more combinations of copper, aluminum, silver, gold, chromium, nickel, carbon, stainless steel, palladium, titanium, zirconium, tantalum, niobium, vanadium, hafnium, gallium, iron, silicon, phosphorus, copper-plated nickel, copper-plated palladium, copper-plated nickel / palladium, iron-plated nickel, iron-plated palladium, iron-plated nickel / palladium, iron-clad copper-plated nickel, iron-clad copper-plated palladium, iron-clad copper-plated nickel / palladium, copper-plated palladium / nickel, iron-plated palladium / nickel, iron-clad copper-plated palladium / nickel, kovar-plated palladium, kovar-plated nickel, kovar-plated nickel / palladium, kovar-plated palladium / nickel, tungsten copper, beryllium oxide, kovar, iron, copper / iron / copper composite material, copper / iron composite material, copper / aluminum composite material, and iron-clad copper. Different materials or material combinations are used to make the tube tongue and the tube seat have different thermal resistances.

[0030] Heat sink materials include silicon carbide, copper / silicon carbide composite structure, copper / silicon carbide / gold tin, copper / silicon carbide / copper composite structure, copper / aluminum nitride composite structure, copper / aluminum nitride / copper composite structure, copper / aluminum nitride / gold tin Composite structure , gold-tin, aluminum nitride, diamond, copper / diamond composite structure, copper / diamond / copper composite structure, copper / diamond / gold-tin composite structure, aluminum nitride single-sided copper, aluminum nitride double-sided copper, silicon carbide single-sided copper, silicon carbide double-sided copper, diamond single-sided copper, diamond double-sided copper, titanium, zirconium, tantalum, niobium, vanadium, hafnium, aluminum nitride / zirconium / copper composite structure, aluminum nitride / tantalum / copper composite structure, aluminum nitride / niobium / copper composite structure, aluminum nitride / vanadium / copper composite structure, aluminum nitride / hafnium / copper composite structure, aluminum nitride / zirconium / niobium / copper composite structure, aluminum nitride / niobium / vanadium / copper composite structure, silicon, tungsten copper, titanium tungsten, copper, beryllium oxide, gallium nitride, gallium arsenide, indium phosphide, molybdenum, any one or more combinations thereof, using different materials or material combinations to make the heat sink have different thermal resistances.

[0031] In addition to the influence of materials on the thermal value of semiconductor lasers, different packaging methods and the chips used will also affect the thermal resistance of semiconductor lasers.

[0032] Specifically, the packaging forms of semiconductor laser modules include: plastic packaging, To-CAN can packaging or COS packaging. Depending on the selected packaging method, the laser module will have different characteristics.

[0033] Laser chips include gallium nitride-based laser chips, gallium arsenide-based laser chips, indium phosphide-based laser chips, aluminum nitride-based laser chips and In gallium nitride-based laser chips. The wavelength of laser chips covers 200nm to 3000nm.

[0034] It should be noted in advance that the thermal resistance calculus curve is drawn through thermal resistance testing, using thermal transient tester equipment for testing, and using the thermal measurement method of integrated circuits - electrical testing methods. The thermal resistance can test the total thermal resistance from the semiconductor laser chip to the environment. The thermal resistance is calculated using electrical power, and the thermal resistance and junction temperature can be tested.

[0035] In addition, the abscissa of the thermal resistance calculus curve is the thermal resistance (unit is [K / W]), and the ordinate is the first-order derivative of heat capacity to thermal resistance, expressed in K (unit is [W 2 s / K 2 ]), several dividing lines in the figure are interface positions of different structures, the width of the area corresponding to 104 on the horizontal axis represents the thermal resistance value of the laser chip 104, the width of the area corresponding to 105 on the horizontal axis represents the thermal resistance value of the first connection layer 105, the width of the area corresponding to 103 on the horizontal axis represents the thermal resistance value of the heat sink 103, the width of the area corresponding to 106 on the horizontal axis represents the thermal resistance value of the second connection layer 106, and the width of the area corresponding to 102 on the horizontal axis represents the thermal resistance value of the tube tongue 102. Since the heat capacity of the outside air is infinite, the end of the curve of the area corresponding to 101 is almost a vertical line perpendicular to the X-axis; in addition, the area with a small slope indicates that the area has low thermal conductivity or a small cross-sectional area, and the area with a large slope is the opposite; the inflection point of the peak is the decomposition of the two structures, the peak indicates that the area has a high thermal conductivity, that is, a structure with a large heat capacity and a small thermal resistance, and the trough indicates that the area has a low thermal conductivity, that is, a structure with a small heat melt and a large thermal resistance.

[0036] In the first specific embodiment, when To-φ1 and COS packaging are used, φ1 is the outer diameter of the tube base 101, and the outer diameter of the tube base 101 is 7-15 mm; the thermal resistance of the laser module is 5-30K / W; the thermal resistance of the heat sink 103 is 1-5K / W, the thermal resistance of the tube tongue 102 is 1-10K / W, the thermal resistance of the tube base 101 is 2-10K / W, the thermal resistance of the first connection layer 105 is 0-5K / W, and the thermal resistance of the second connection layer 106 is 0-5K / W. The thermal resistance calculus curve of each component of the semiconductor laser module using this embodiment is shown in the figure. Figure 2As shown in the figure, the thermal resistance of the first connection layer 105 is less than or equal to the thermal resistance of the heat sink 103; the thermal resistance of the second connection layer 106 is less than or equal to the thermal resistance of the tube base 102; the thermal resistance of the second connection layer 106 is less than or equal to the thermal resistance of the first connection layer 105; the thermal resistance of the second connection layer 106 is less than or equal to the thermal resistance of the tube tongue 102; the thermal resistance calculus curve distribution of the heat sink 103 in the figure has a W-type distribution, and it can be seen that the curve near the first connection layer 105 is relatively flat, indicating that the connection between the heat sink 103 and the first connection layer 105 has a higher thermal conductivity, and the heat at the first connection layer 105 can be better transferred to the heat sink 103, and the curve near the second connection layer 106 is steeper (i.e., the slope is larger); the thermal resistance calculus curve distribution of the tube tongue 102 conforms to the U-type distribution, and different components are designed to have different thermal resistance differential curve distributions, thereby reducing the total thermal resistance value of the semiconductor laser module, and the transition of the thermal resistance differential curves between the connected components is also designed to make the transition smoother, thereby reducing the thermal resistance bottleneck of the laser module.

[0037] In the second specific embodiment, when the To-φ2 packaging form is adopted, φ2 is the outer diameter of the tube base 101, and the outer diameter of the tube base 101 is 2-7 mm; the thermal resistance of the laser module is 30-150K / W; the thermal resistance of the heat sink 103 is 5-30K / W, the thermal resistance of the tube tongue 102 is 2-30K / W, the thermal resistance of the tube base 101 is 10-50K / W, the thermal resistance of the first connection layer 105 is 0-10K / W, and the thermal resistance of the second connection layer 106 is 0-10K / W. The thermal resistance calculus curve of each component of the semiconductor laser module using this embodiment is shown in the figure. Figure 3 As shown, the thermal resistance of the first connection layer 105 is less than or equal to the thermal resistance of the heat sink 103; the thermal resistance of the second connection layer 106 is less than or equal to the thermal resistance of the tube base 102; the thermal resistance of the second connection layer 106 is less than or equal to the thermal resistance of the first connection layer 105; the thermal resistance of the second connection layer 106 is less than or equal to the thermal resistance of the tube tongue 102; the distribution of the calculus curve of the thermal resistance of the heat sink 103 conforms to the U-type distribution, and the distribution of the calculus curve of the thermal resistance of the tube tongue 102 conforms to the W-type distribution. It can be seen that the curve near the second connection layer 106 is relatively flat, indicating that the connection between the tube tongue 102 and the second connection layer 106 has a higher thermal conductivity, and the heat at the second connection layer 106 can be better transferred to the tube tongue 102, while the curve near the tube base 101 is steeper (that is, the slope is larger).

[0038] In the third specific embodiment, the thermal resistance calculus curve of each component of the semiconductor laser module using this embodiment is as follows: Figure 4As shown, the thermal resistance of the first connection layer 105 is less than or equal to the thermal resistance of the heat sink 103; the thermal resistance of the second connection layer 106 is less than or equal to the thermal resistance of the tube base 102; the thermal resistance of the second connection layer 106 is less than or equal to the thermal resistance of the first connection layer 105; the thermal resistance of the second connection layer 106 is less than or equal to the thermal resistance of the tube tongue 102; the calculus curve distribution of the thermal resistance of the heat sink 103 conforms to the arc distribution, and the calculus curve distribution of the thermal resistance of the tube tongue 102 conforms to the arc distribution.

[0039] In the fourth specific embodiment, the thermal resistance calculus curve of each component of the semiconductor laser module using this embodiment is as follows: Figure 5 As shown, at this time, the thermal resistance calculus curve distributions of the heat sink 103 and the tube tongue 102 are both in accordance with the curved distribution. From the curve of the corresponding area of ​​103 in the figure, it can be seen that the curve close to the first connection layer 105 is relatively flat, indicating that the connection between the heat sink 103 and the first connection layer 105 has a higher thermal conductivity, and the heat at the first connection layer 105 can be better transferred to the heat sink 103, while the curve close to the second connection layer 106 is steeper (i.e., the slope is larger); from the curve corresponding to the corresponding area of ​​102 in the figure, it can be seen that the curve close to the second connection layer 106 is a wave peak inflection point, indicating that this area has a higher thermal conductivity.

[0040] In the fifth specific embodiment, the thermal resistance calculus curve of each component of the semiconductor laser module using this implementation mode is as follows: Figure 6 As shown, at this time, the thermal resistance calculus curve distribution of the heat sink 103 conforms to the multi-curve distribution (as shown in the part 103 in the figure), and the thermal resistance calculus curve distribution of the tube tongue 102 conforms to the U-shaped distribution (as shown in the part 102 in the figure).

[0041] In the above five embodiments, the thermal resistance and thermal capacity of each component are designed according to the utility model, so that when the semiconductor laser is working, the thermal resistance bottleneck of the laser module is reduced, the total thermal resistance of the laser module is reduced, and then the junction temperature of the laser chip is reduced, thereby reducing the thermal mismatch and temperature rise of the laser chip, and reducing the piezoelectric polarization and quantum confinement of the laser chip. a trk effect, improve the quantum confinement effect, radiation recombination efficiency and thermal inversion current density of the laser chip, reduce the mode hopping ratio and improve the slope efficiency decline of the aging process.

[0042] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, unless they are contradictory.

[0043] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations of the present invention. Ordinary technicians in the field can change, modify, replace and modify the above embodiments within the scope of the present invention.

[0044] The specific implementation methods of the utility model described above do not constitute a limitation on the protection scope of the utility model. Any other corresponding changes and modifications made according to the technical concept of the utility model should be included in the protection scope of the claims of the utility model.

Claims

1. A semiconductor laser packaging module, characterized in that: It comprises a pin, a tube seat, a tube tongue, a heat sink and a laser chip; a first connection layer is provided between the laser chip and the heat sink; a second connection layer is provided between the heat sink and the tube tongue; the thermal resistance of the first connection layer is less than or equal to the thermal resistance of the heat sink; the thermal resistance of the second connection layer is less than or equal to the thermal resistance of the tube seat; the thermal resistance of the second connection layer is less than or equal to the thermal resistance of the first connection layer; The thermal resistance of the second connection layer is less than or equal to the thermal resistance of the tube tongue.

2. A semiconductor laser packaging module according to claim 1, characterized in that: When the semiconductor laser packaging module adopts To-φ1 and COS packaging forms, the thermal resistance is 5~30K / W, the thermal resistance of the heat sink is 1~5K / W, the thermal resistance of the tube tongue is 1~10K / W, the thermal resistance of the tube base is 2~10K / W, the thermal resistance value of the first connecting layer is 0~5K / W, and the thermal resistance value of the second connecting layer is 0~5K / W.

3. The semiconductor laser packaging module according to claim 1, characterized in that: When the semiconductor laser packaging module adopts the To-φ2 packaging form, the thermal resistance is 30~150K / W, the thermal resistance of the heat sink is 5~30K / W, the thermal resistance of the tube tongue is 2~30K / W, the thermal resistance of the tube base is 10~50K / W, the thermal resistance value of the first connecting layer is 0~10K / W, and the thermal resistance value of the second connecting layer is 0~10K / W.

4. The semiconductor laser packaging module according to claim 1, characterized in that: The thermal resistance calculus curve distribution of the first connection layer is U-shaped distribution; the thermal resistance calculus distribution of the second connection layer is U-shaped distribution.

5. The semiconductor laser packaging module according to claim 1, characterized in that: The thermal resistance calculus curve distribution of the heat sink includes: W-shape, U-shape, arc shape, curve shape or multiple curve shapes.

6. The semiconductor laser packaging module according to claim 1, characterized in that: The thermal resistance calculus curve distribution of the tube tongue includes: U-shape, W-shape, arc shape or curve shape.

7. The semiconductor laser packaging module according to claim 1, characterized in that: The laser chips include gallium nitride-based laser chips, gallium arsenide-based laser chips, indium phosphorus-based laser chips, aluminum nitride-based laser chips and indium gallium nitride-based laser chips, and the wavelength of the laser chips covers 200nm to 3000nm; the packaging forms of the laser chips include: plastic packaging, To-CAN can packaging or COS packaging.

Images