Semiconductor crystal growth equipment gas supply system and crystal growth experiment plant

Abstract

The utility model discloses a semiconductor crystal growth equipment gas supply system and a crystal growth experiment plant, which comprise a crystal growth furnace body module, an intelligent heating module, a bracket module, an auxiliary heating vessel module, a metal particle filtering module, a ball valve secondary pressure reduction module and an industrial gas supply module, the intelligent heating module is used for heating raw materials to realize crystal growth; the crystal growth furnace body module lifts the intelligent heating module from bottom to top, the intelligent heating module is arranged at the top end of the crystal growth furnace body module, the intelligent heating module is communicated with the metal particle filtering module, the metal particle filtering module is connected with the ball valve secondary pressure reduction module, and the ball valve secondary pressure reduction module is connected with the industrial gas supply module. The device has the beneficial effects that on one hand, precise control over parameters such as gas flow, pressure, purity and mixing proportion can be achieved, on the other hand, it can be ensured that a gas conveying pipeline is clean and free of leakage, and then the process requirement for semiconductor crystal growth is met.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor crystal growth, in particular to a semiconductor crystal growth equipment gas supply system and a crystal growth experimental plant. Background Art

[0002] In the semiconductor chip industry, semiconductor crystal growth equipment plays a very important role. The working process of crystal growth equipment requires the support of the gas supply system to create and maintain a specific growth environment, control chemical reactions, accurately manage temperature, and ultimately ensure process stability and product yield.

[0003] During the actual crystal growth laboratory setup, fluctuations in gas supply can lead to changes in process parameters, introducing certain risks to the semiconductor crystal growth process and hindering wafer yield. Specifically, engineers require precise control over parameters such as gas flow, pressure, purity, and mixing ratio. Furthermore, strict requirements exist for the cleanliness and leak-free nature of gas delivery pipelines. Therefore, the industry needs to design a gas supply system for semiconductor crystal growth equipment to address these technical issues. Utility Model Content

[0004] The technical problem to be solved by the present invention is: how to design a gas supply solution that can, on the one hand, achieve precise control of parameters such as gas flow, pressure, purity, and mixing ratio, and on the other hand, ensure that the gas delivery pipeline is clean and leak-free, thereby meeting the process requirements of semiconductor crystal growth.

[0005] Therefore, in order to solve the above problems, the embodiments of the present invention propose a semiconductor crystal growth equipment gas supply system and a crystal growth experimental plant, the technical effects of which are, on the one hand, capable of achieving precise control of parameters such as gas flow, pressure, purity, and mixing ratio, and on the other hand, ensuring that the gas delivery pipeline is clean and leak-free, thereby meeting the process requirements of semiconductor crystal growth.

[0006] In a first aspect, an embodiment of the present invention provides a gas supply system for semiconductor crystal growth equipment, comprising: a crystal growth furnace module, an intelligent heating module, a support module, an auxiliary heating vessel module, a metal particle filter module, a ball valve secondary pressure reducing module, and an industrial gas supply module. The crystal growth furnace module is used to implement the control function of the system, and the intelligent heating module is used to heat raw materials to achieve crystal growth. The crystal growth furnace module supports the intelligent heating module from bottom to top. The intelligent heating module is arranged at the top of the crystal growth furnace module. The crystal growth furnace module is fixedly connected to one end of the support module, and the other end of the support module is connected to the auxiliary heating vessel module. The height position of the auxiliary heating vessel module relative to the horizontal plane is greater than the height position of the top of the intelligent heating module relative to the horizontal plane. The intelligent heating module is vertically arranged between the crystal growth furnace module and the auxiliary heating vessel module along the long side direction. The intelligent heating module is connected to the metal particle filter module, the metal particle filter module is connected to the ball valve secondary pressure reducing module, and the ball valve secondary pressure reducing module is connected to the industrial gas supply module. In the above scheme, the semiconductor crystal growth equipment gas supply system, that is, a compound semiconductor crystal growth system, is a system composed of crystal growth equipment, a gas supply channel, and a gas supply module, which can heat the raw materials to achieve crystal growth. Furthermore, the intelligent heating module includes a heating wire and a reaction chamber, and the heating wire wraps the reaction chamber. Furthermore, the auxiliary heating vessel module may include a quartz crucible; the crystal growth furnace body module includes a quartz growth chamber, an upper furnace cover opening module, and a lower furnace cover lifting module; the intelligent heating module includes an induction coil, a temperature controller, an induction power supply, and an infrared thermometer to form temperature control, and the coil lifting system realizes the change of the coil position.

[0007] A further technical solution is that the industrial gas supply module is connected to a nitrogen channel, an argon channel, and a hydrogen channel, and the ball valve two-stage pressure reducing module includes a first pressure reducer, a second pressure reducer, and a third pressure reducer; the industrial gas supply module is connected to the first pressure reducer via the nitrogen channel, the second pressure reducer via the argon channel, and the third pressure reducer via the hydrogen channel. Specifically, the nitrogen channel is an N2 gas channel, the argon channel is an Ar gas channel, and the hydrogen channel is an H2 gas channel.

[0008] A further technical solution is that the metal particle filtration module includes a first filter, a second filter, and a third filter; the first pressure reducer is connected to the first filter via the nitrogen channel, the first filter is connected to the intelligent heating module via the nitrogen channel, the second pressure reducer is connected to the second filter via the nitrogen channel, the second filter is connected to the intelligent heating module via the nitrogen channel, the third pressure reducer is connected to the third filter via the nitrogen channel, and the third filter is connected to the intelligent heating module via the nitrogen channel. The first, second, and third filters in the industrial gas supply module are all used to improve the gas supply quality to the intelligent heating module.

[0009] A further technical solution is that the nitrogen channel, the argon channel, and the hydrogen channel are all along the wall shared by the experimental space and the gas supply space, enabling communication between the industrial gas supply module and the intelligent heating module. In one embodiment, the nitrogen channel, the argon channel, and the hydrogen channel are connected to the intelligent heating module via a bridge design.

[0010] A further technical solution is that the semiconductor crystal growth equipment gas supply system is located within a factory building, which includes an experimental space and a gas supply space adjacent to each other via a partition wall. The industrial gas supply module is located within the gas supply space, and the crystal growth furnace module, the intelligent heating module, the support module, the auxiliary heating vessel module, the metal particle filtration module, and the ball valve secondary pressure relief module are all located within the experimental space. The term "adjacent to a partition wall" specifically means that two spaces are separated by a wall, including both situations where the wall has a door or no door.

[0011] A further technical solution is that the nitrogen channel, the argon channel, and the hydrogen channel all run along a wall shared by the experimental space and the gas supply space, enabling connectivity between the industrial gas supply module and the intelligent heating module. In one embodiment, the shared wall includes at least one 90-degree corner, and may also include two or more corners. The nitrogen channel, the argon channel, and the hydrogen channel may be fixed to the wall.

[0012] In the above solution, due to the high pressure in the cylinders in the system, the first-stage pressure reduction is difficult to achieve the required operating pressure of approximately 3 kg. Therefore, a second-stage pressure reducer with a ball valve is required. Furthermore, a gas pressure reducing valve, commonly known as a pressure regulator in the industry, automatically varies the gas flow through the pressure reducing valve to maintain a specified pressure at the outlet. This device automatically varies the gas flow through the pressure reducing valve to maintain a specified pressure at the outlet.

[0013] In a second aspect, embodiments of the present invention further provide a crystal growth laboratory, comprising a laboratory space, a gas supply space, a power distribution space, a warehouse space, an office space, an exhibition area, and a visitor access area. The crystal growth laboratory also includes the gas supply system for semiconductor crystal growth equipment described in the first aspect. The crystal growth laboratory enables precise control of parameters such as gas flow, pressure, purity, and mixing ratio, while ensuring clean and leak-free gas delivery pipelines, thereby meeting the process requirements for semiconductor crystal growth.

[0014] A further technical solution is that the visiting passage area is adjacent to the experimental space, the gas supply space, the power distribution space, and the warehouse space by walls, the visiting passage area is connected to the exhibition and activity area, the exhibition and activity area is adjacent to the office space by walls, and the office space is adjacent to the experimental space by walls.

[0015] A further technical solution is that the air supply space is adjacent to one end of the visitor passage area, and the exhibition activity area is connected to the other end of the visitor passage area. After visitors enter the exhibition activity area, the air supply space will not affect visitors in the exhibition activity area due to the presence of the visitor passage area.

[0016] The semiconductor crystal growth equipment gas supply system described in the present invention adopts a high-purity quartz tube as a reaction chamber and a double-wall water-cooled structural route, which is compatible with the six-inch conductive and semi-insulating silicon carbide crystal growth process requirements. It uses induction heating technology and cooperates with the ultra-slow and rapid lifting and lowering functions of the coil to achieve uniform and controllable heating capabilities. It is combined with the PLC plus software control method to enable the equipment and system to have both intelligent software functions and stable and reliable process control.

[0017] In summary, in the actual process of setting up a crystal growth experimental environment, changes in process parameters caused by fluctuations in gas supply will bring certain risks to the semiconductor crystal growth process, which is not conducive to improving the yield rate of wafers. Specifically, engineers need to precisely control parameters such as gas flow, pressure, purity, and mixing ratio; in addition, there are strict requirements for the cleanliness and leakage of gas delivery pipelines. This application solves the above problems. On the one hand, it can achieve precise control of parameters such as gas flow, pressure, purity, and mixing ratio, and on the other hand, it can ensure that the gas delivery pipeline is clean and leak-free, thereby meeting the process requirements of semiconductor crystal growth. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 This is an overall block diagram of the gas supply system for semiconductor crystal growth equipment proposed in the present invention.

[0020] Figure 2 This is a partial block diagram of the gas supply system of the semiconductor crystal growth equipment proposed in the present invention.

[0021] Figure 3 This is a partial structural diagram of the gas supply system of the semiconductor crystal growth equipment proposed in the present invention.

[0022] Figure 4 This is the overall structural diagram of the crystal growth experimental plant proposed in this utility model. DETAILED DESCRIPTION

[0023] The following will be combined with the accompanying drawings of the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments. Similar component numbers in the drawings represent similar components. Obviously, the embodiments described below are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0024] It should be understood that the terms used in the description of the embodiments of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the embodiments of the present invention. As used in the description of the embodiments of the present invention and the appended claims, the singular forms "a", "an" and "the" are intended to include plural forms unless the context clearly indicates otherwise.

[0025] Example

[0026] See also Figure 1-Figure 3, is a semiconductor crystal growth equipment gas supply system proposed in an embodiment of the present utility model, the semiconductor crystal growth equipment gas supply system includes: a crystal growth furnace module 10, an intelligent heating module 20, a bracket module 30, an auxiliary heating vessel module 40, a metal particle filter module 50, a ball valve secondary pressure reducing module 60, and an industrial gas supply module 70. The crystal growth furnace module 10 is used to realize the control function of the system, and the intelligent heating module 20 is used to heat the raw materials to realize crystal growth; the crystal growth furnace module 10 lifts the intelligent heating module 20 from bottom to top, and the intelligent heating module 20 is arranged at the top of the crystal growth furnace module 10, and the crystal growth furnace The module 10 is fixedly connected to one end of the support module 30, and the other end of the support module 30 is connected to the auxiliary heating vessel module 40. The height of the auxiliary heating vessel module 40 relative to the horizontal plane is greater than the height of the top of the intelligent heating module 20 relative to the horizontal plane. The intelligent heating module 20 is vertically arranged along the longitudinal direction between the crystal growth furnace module 10 and the auxiliary heating vessel module 40. The intelligent heating module 20 is connected to the metal particle filter module 50, which is connected to the ball valve secondary pressure reduction module 60, which is connected to the industrial gas supply module 70. In one embodiment, the metal particle filter module 50 and the ball valve secondary pressure reduction module 60 are connected to the crystal growth furnace module 10. In another embodiment, the crystal growth furnace module 10, the intelligent heating module 20, the support module 30, and the auxiliary heating vessel module 40 collectively constitute the gas-consuming equipment of the system, and the metal particle filter module 50 and the ball valve secondary pressure reduction module 60 are connected to the gas-consuming equipment.

[0027] Furthermore, the industrial gas supply module 70 of the semiconductor crystal growth equipment gas supply system is connected to the nitrogen channel N2, the argon channel Ar, and the hydrogen channel H2, and the ball valve secondary pressure reducing module 60 includes a first pressure reducer 61, a second pressure reducer 62, and a third pressure reducer 63; the industrial gas supply module 70 is connected to the first pressure reducer 61 through the nitrogen channel N2, the industrial gas supply module 70 is connected to the second pressure reducer 62 through the argon channel Ar, and the industrial gas supply module 70 is connected to the third pressure reducer 63 through the hydrogen channel H2.

[0028] Furthermore, the metal particle filtering module 50 of the semiconductor crystal growth equipment gas supply system includes a first filter 51, a second filter 52, and a third filter 53; the first pressure reducer 61 is connected to the first filter 51 through the nitrogen channel N2, the first filter 51 is connected to the intelligent heating module 20 through the nitrogen channel N2, the second pressure reducer 62 is connected to the second filter 52 through the nitrogen channel N2, the second filter 52 is connected to the intelligent heating module 20 through the nitrogen channel N2, the third pressure reducer 63 is connected to the third filter 53 through the nitrogen channel N2, and the third filter 53 is connected to the intelligent heating module 20 through the nitrogen channel N2.

[0029] Furthermore, the semiconductor crystal growth equipment gas supply system is arranged in a factory building, which includes an experimental space 1 and a gas supply space 2 adjacent to each other with a partition wall; the industrial gas supply module 70 is arranged in the gas supply space 2, and the crystal growth furnace body module 10, the intelligent heating module 20, the bracket module 30, the auxiliary heating vessel module 40, the metal particle filter module 50, and the ball valve secondary pressure reducing module 60 are all arranged in the experimental space 1.

[0030] Furthermore, the nitrogen channel N2, the argon channel Ar, and the hydrogen channel H2 of the semiconductor crystal growth equipment gas supply system are all along the common wall of the experimental space 1 and the gas supply space 2, realizing the connection between the industrial gas supply module 70 and the intelligent heating module 20.

[0031] The above-mentioned semiconductor crystal growth equipment gas supply system can, on the one hand, achieve precise control of gas flow, pressure, purity, mixing ratio and other parameters; on the other hand, it can ensure that the gas delivery pipeline is clean and leak-free, thereby meeting the process requirements of semiconductor crystal growth.

[0032] Continue to see Figure 4 An embodiment of the present invention also proposes a crystal growth experimental plant, which includes an experimental space 1, an air supply space 2, a power distribution space 3, a warehouse space 4, an office space 5, an exhibition and activity area 6, and a visiting passage area 7. The crystal growth experimental plant also includes a semiconductor crystal growth equipment air supply system as described in any of the above embodiments.

[0033] Furthermore, the visiting passage area 7 of the semiconductor crystal growth equipment gas supply system is adjacent to the experimental space 1, the gas supply space 2, the power distribution space 3, and the warehouse space 4 by walls, and the visiting passage area 7 is connected to the exhibition and activity area 6, and the exhibition and activity area 6 is adjacent to the office space 5 by walls, and the office space 5 is adjacent to the experimental space 1 by walls.

[0034] Furthermore, the gas supply space 2 of the gas supply system of the semiconductor crystal growth equipment is adjacent to one end of the visiting passage area 7 , and the exhibition activity area 6 is connected to the other end of the visiting passage area 7 .

[0035] In summary, in the actual process of setting up a crystal growth experimental environment, changes in process parameters caused by fluctuations in gas supply will bring certain risks to the semiconductor crystal growth process, which is not conducive to improving the yield rate of wafers. Specifically, engineers need to precisely control parameters such as gas flow, pressure, purity, and mixing ratio; in addition, there are strict requirements for the cleanliness and leakage of gas delivery pipelines. This application solves the above problems. On the one hand, it can achieve precise control of parameters such as gas flow, pressure, purity, and mixing ratio, and on the other hand, it can ensure that the gas delivery pipeline is clean and leak-free, thereby meeting the process requirements of semiconductor crystal growth.

[0036] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0037] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of such features. In the description of this utility model, "plurality" means two or more, unless otherwise specifically defined.

[0038] In this utility model, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. For those skilled in the art, the specific meanings of the above terms in this utility model can be understood according to specific circumstances.

[0039] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0040] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine the different embodiments or examples described in this specification.

[0041] Obviously, those skilled in the art may make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. Thus, as long as these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is intended to include such modifications and variations.

[0042] The above description is a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and such modifications or substitutions should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A gas supply system for semiconductor crystal growth equipment, characterized in that: The semiconductor crystal growth equipment gas supply system comprises: Crystal growth furnace module, intelligent heating module, support module, auxiliary heating vessel module, metal particle filtering module, ball valve secondary pressure reducing module, industrial gas supply module, the crystal growth furnace module is used to realize the control function of the system, and the intelligent heating module is used to heat the raw materials to realize crystal growth; The crystal growth furnace module lifts the intelligent heating module from bottom to top, the intelligent heating module is arranged at the top of the crystal growth furnace module, the crystal growth furnace module is fixedly connected to one end of the bracket module, and the other end of the bracket module is connected to the auxiliary heating vessel module; the height position of the auxiliary heating vessel module relative to the horizontal plane is greater than the height position of the top of the intelligent heating module relative to the horizontal plane, the intelligent heating module is vertically arranged between the crystal growth furnace module and the auxiliary heating vessel module along the long side direction, the intelligent heating module is connected to the metal particle filter module, the metal particle filter module is connected to the ball valve secondary pressure reducing module, and the ball valve secondary pressure reducing module is connected to the industrial gas supply module.

2. The semiconductor crystal growth equipment gas supply system according to claim 1, characterized in that: The industrial gas supply module is connected to the nitrogen channel, the argon channel, and the hydrogen channel, and the ball valve two-stage pressure reducing module includes a first pressure reducer, a second pressure reducer, and a third pressure reducer; the industrial gas supply module is connected to the first pressure reducer through the nitrogen channel, the industrial gas supply module is connected to the second pressure reducer through the argon channel, and the industrial gas supply module is connected to the third pressure reducer through the hydrogen channel.

3. The semiconductor crystal growth equipment gas supply system according to claim 2, characterized in that: The metal particle filtering module includes a first filter, a second filter, and a third filter; the first pressure reducer is connected to the first filter through the nitrogen channel, the first filter is connected to the intelligent heating module through the nitrogen channel, the second pressure reducer is connected to the second filter through the nitrogen channel, the second filter is connected to the intelligent heating module through the nitrogen channel, the third pressure reducer is connected to the third filter through the nitrogen channel, and the third filter is connected to the intelligent heating module through the nitrogen channel.

4. The semiconductor crystal growth equipment gas supply system according to claim 3, characterized in that: The semiconductor crystal growth equipment gas supply system is arranged in a factory building, which includes an experimental space and a gas supply space adjacent to each other with a partition wall; the industrial gas supply module is arranged in the gas supply space, and the crystal growth furnace body module, the intelligent heating module, the bracket module, the auxiliary heating vessel module, the metal particle filter module, and the ball valve secondary pressure relief module are all arranged in the experimental space.

5. The semiconductor crystal growth equipment gas supply system according to claim 4, characterized in that: The nitrogen channel, the argon channel, and the hydrogen channel are all along the wall shared by the experimental space and the gas supply space, so as to achieve the connection between the industrial gas supply module and the intelligent heating module.

6. A crystal growth experimental plant, characterized by: The crystal growth experimental plant includes an experimental space, a gas supply space, a power distribution space, a warehouse space, an office space, an exhibition and activity area, and a visiting passage area. The crystal growth experimental plant also includes a semiconductor crystal growth equipment gas supply system as described in any one of claims 1-5.

7. The crystal growth experimental plant according to claim 6, characterized in that: The visiting passage area is adjacent to the experimental space, the gas supply space, the power distribution space, and the warehouse space through walls. The visiting passage area is connected to the exhibition and activity area. The exhibition and activity area is adjacent to the office space through walls. The office space is adjacent to the experimental space through walls.

8. The crystal growth experimental plant according to claim 7, characterized in that: The air supply space is adjacent to one end of the visiting passage area, and the exhibition activity area is connected to the other end of the visiting passage area.

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