Chemical mechanical polishing conditioner

Inactive Publication Date: 2014-10-16
SUNG CHIEN MIN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the other hand, fixation techniques that utilize high heat and/or pressure to fix abrasive particles on the surface of CMP pad conditioner, because of the difference of the thermal expansion coefficient between the bonding layer and the bottom of substrate, thus causing warping of the conditioner support as the conditioner cools.
Thus, unless steps are taken to avoid such warpage, abr

Method used

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  • Chemical mechanical polishing conditioner
  • Chemical mechanical polishing conditioner
  • Chemical mechanical polishing conditioner

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embodiment 1

[0046]The primary objective of the present invention is to control the protruding distance of the protruding tips of abrasive particles, so as to decrease to damage ratio of polished workpieces, and thus the chemical mechanical polishing conditioner has more excellent polishing efficiency and working life. FIGS. 2A-2D shows a process of manufacturing a chemical mechanical polishing conditioner according to the embodiment 1 of the present invention. Please refer to FIG. 2A, firstly, an abrasive layer 22 is provided and has a first layer of abrasive particles 221a, a thin metal sheet 222, and a second layer of abrasive particles 221b. Wherein the first layer of abrasive particles 221a is located above the thin metal sheet 222, the second layer of abrasive particles 222b is located under the thin metal sheet 222, and thus the thin metal sheet 222 is sandwiched between the first layer of abrasive particles 221a and the second layer of abrasive particles 221b; the first layer of abrasive...

embodiment 2

[0051]FIGS. 3A-3D shows a process of manufacturing a chemical mechanical polishing conditioner according to the embodiment 2 of the present invention, wherein an abrasive layer of the embodiment 2 has a layer of abrasive particles on one side of an abrasive layer of the embodiment 2, which is different from the abrasive layer of which both side have the layer of abrasive particles. Please refer to FIG. 3A, firstly, an abrasive layer 32 is provided and has a first layer of abrasive particles 321, a thin metal sheet 322. Wherein the first layer of abrasive particles 321 is located above the thin metal sheet 322; the first layer of abrasive particles 321 of the abrasive layer 32 comprises a plurality of abrasive particles, the protruding tips of the plurality of abrasive particles may be regarded as a planar leveling surface, and the plurality of abrasive particles have a patterning arrangement being an array pattern; and the protruding tips of the plurality of abrasive particles are a...

embodiment 3

[0056]FIGS. 4A-4B shows schematic views of a chemical mechanical polishing conditioner according to the embodiment 3 of the present invention. The chemical mechanical polishing conditioner according to the present embodiment 3 is almost the same as that of the embodiment 1, except that an abrasive layer of the embodiment 3 makes abrasive particles to be fixed on both side of a thin metal sheet by bonding layers of abrasive particles, on the contrary, the abrasive layer of the embodiment 1 make abrasive particles to be directly embedded to and fixed on the both side of the thin metal sheet. Please refer to FIG. 4A, an abrasive layer 42 is provided and has a first layer of abrasive particles 421a, a thin metal sheet 422, a bonding layer of abrasive particles 423, and a second layer of abrasive particles 421b. Wherein the first layer of abrasive particles 421a is located above the thin metal sheet 422, the second layer of abrasive particles 422b is located under the thin metal sheet 42...

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Abstract

The present invention relates to a chemical mechanical polishing conditioner which comprises: a substrate; a bonding layer, disposed on the substrate; and an abrasive layer, having a thin metal sheet and a first layer of abrasive particles, wherein the first layer of abrasive particles is disposed on the thin metal sheet, and the abrasive layer is coupled to the substrate with the bonding layer; wherein the first layer of abrasive particles comprises a plurality of abrasive particles, of which protruding tips has a planar leveling surface, so that the plurality of abrasive particles do not have one or more protruding tips of the plurality of abrasive particles having particular significant difference in protrusion distance, and the plurality of abrasive particles have a patterning arrangement. Therefore, the present invention can reduce damage ratio of polished workpieces by a planar leveling surface of the chemical mechanical polishing conditioner, so that the chemical mechanical polishing conditioner has more excellent polishing efficiency and working life.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]This application claims the benefits of the Taiwan Patent Application Serial no. 102206277, filed on Apr. 8, 2012, the subject matter of which is incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a chemical mechanical polishing conditioner, more particularly, to a chemical mechanical polishing conditioner having a planar leveling surface.[0004]2. Description of Related Art[0005]Chemical mechanical polishing (CMP) process is a common polishing process for a variety of industries. Using the chemical mechanical polishing process can polish the surface of various kinds of materials, which comprises plane of integrated circuit, ceramic, silicon, glass, quartz or metal, or etc. In addition, with the rapid development of integrated circuit, the chemical mechanical polishing can achieve object of a large leveling area, and thus is commonly one of semiconductor wafer pl...

Claims

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Application Information

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IPC IPC(8): B24B53/017
CPCB24B53/017
InventorSUNG, CHIEN-MINYEH, WEN-TING
OwnerSUNG CHIEN MIN