Method for making two-frequency high temperature grating

Abstract

This invention relates to double frequency high temperature process method in the optical technique field, which is characterized by the following: focus ion beam microscopes fulfills the double frequency high temperature grating process of the mature commercial environment; through adjusting focus ion beam microscope amplifier times, beam intensity, etching depth, line distance and using system self accurate positioning system on the part surface or processing single grating and crossing grating and double frequency grating with variable intensity.

Description

technical field

[0001] The invention relates to a grating manufacturing method, which belongs to the technical field of photometry. Background technique

[0002] The grating transferred or directly etched on the surface of the measured object is used as the carrier of the deformation information on the surface of the object. In the field of photomechanics, it is the basic element for the measurement of the surface deformation of the object in the geometric moire method, moiré interferometry and electron microscope moire method. .

[0003] At present, the relatively mature grating manufacturing methods mainly include mechanical scribing and holographic photolithography.

[0004] Mechanical scribing is the most traditional method for making gratings. This method uses a scribing machine to scribble grooves one by one on the surface of the grating material. This method puts forward high requirements on the mechanical precision of the scribing machine. Moreover, the mechanical ...

Examples

Embodiment 1

[0019] The material of the test piece is TiNi shape memory alloy, which is processed by electric cutting, and then polished by hand, and a layer of gold film is plated on the surface of the test piece with a thickness of 0.5 μm.

[0020] This test piece is placed on the stage of the focused ion beam microscope that the model is DB235, makes the side that is coated with gold film face up, selects acceleration voltage U=30kv, beam intensity I=400pA, etching depth Z= 0.4μm, the magnification is 12000 times, select the orthogonal parallel line pattern, set the line spacing to 0.4μm, etch after the focus is clear, and obtain an orthogonal grating of 2500l / mm. Then use the positioning system to move to the position of the pre-etched high-frequency grating (a certain area on the low-frequency grating), set the etching parameters of the 5000l / mm orthogonal grating, the accelerating voltage U=30kv, the beam intensity I=30pA, and The etching depth Z=0.4μm, the magnification is 20000 tim...

technical field

[0001] The invention relates to a grating manufacturing method, which belongs to the technical field of photometry. Background technique

[0002] The grating transferred or directly etched on the surface of the measured object is used as the carrier of the deformation information on the surface of the object. In the field of photomechanics, it is the basic element for the measurement of the surface deformation of the object in the geometric moire method, moiré interferometry and electron microscope moire method. .

[0003] At present, the relatively mature grating manufacturing methods mainly include mechanical scribing and holographic photolithography.

[0004] Mechanical scribing is the most traditional method for making gratings. This method uses a scribing machine to scribble grooves one by one on the surface of the grating material. This method puts forward high requirements on the mechanical precision of the scribing machine. Moreover, the mechanical ...

Examples

Embodiment 1

[0019] The material of the test piece is TiNi shape memory alloy, which is processed by electric cutting, and then polished by hand, and a layer of gold film is plated on the surface of the test piece with a thickness of 0.5 μm.

[0020] This test piece is placed on the stage of the focused ion beam microscope that the model is DB235, makes the side that is coated with gold film face up, selects acceleration voltage U=30kv, beam intensity I=400pA, etching depth Z= 0.4μm, the magnification is 12000 times, select the orthogonal parallel line pattern, set the line spacing to 0.4μm, etch after the focus is clear, and obtain an orthogonal grating of 2500l / mm. Then use the positioning system to move to the position of the pre-etched high-frequency grating (a certain area on the low-frequency grating), set the etching parameters of the 5000l / mm orthogonal grating, the accelerating voltage U=30kv, the beam intensity I=30pA, and The etching depth Z=0.4μm, the magnification is 20000 tim...

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