A kind of manufacturing method of n-type IBC silicon solar cell based on ion implantation process

Abstract

The invention discloses an n-type IBC silicon solar cell manufacturing method based on the ion implantation technology. Doping between n+ areas and p+ areas is achieved through combination between a boron diffusion mode and a boron ion implantation mode, and through the technology, current leakage of tunnel junctions of cells can be effectively avoided without performing isolation on the n+ / p+ interface of the back side.

Description

technical field

[0001] The invention belongs to the technical field of solar cells, and in particular relates to a manufacturing method of an n-type IBC silicon solar cell based on an ion implantation process. Background technique

[0002] Solar cells can directly convert solar energy into electrical energy, which is an effective way to utilize solar energy resources. Since no harmful substances are produced during use, solar cells are favored in solving energy and environmental problems and have a good market prospect. Solar energy is also Known as the most ideal energy source, it is an important resource for the survival and development of human society.

[0003] At present, the mainstream solar cell material uses p-type silicon as the substrate, and forms a pn junction through high-temperature phosphorus diffusion. For p-type silicon materials, because it is insensitive to metal impurities and many non-metal defects, and has fewer boron-oxygen pairs in the body, its perf...

Examples

Embodiment 1

[0036] This embodiment includes the following steps:

[0037] 1. Select an n-type silicon substrate with a resistivity of 3-5Ω·cm, and its minority carrier lifetime is greater than 500us, use chemical etching to remove the damaged layer on the surface of the silicon wafer, and make texture on both sides.

[0038] 2. Double-sided phosphorus diffusion: the diffusion resistance is 60Ω / □.

[0039] 3. Print corrosive paste on the p+ defined area on the back to remove the phosphosilicate glass in the p+ defined area.

[0040] 4. Use 20% TMAH solution to carry out selective etching at 60°C, polish the p+ defined area, and etch for 30 minutes.

[0041] 5. Remove the phosphosilicate glass on the front surface of the n-type silicon substrate, and use hydrofluoric acid, nitric acid and water with a volume ratio of 1:30:300 to etch the front surface of the n-type silicon substrate. 140Ω / □.

[0042] 6. Remove the back phosphosilicate glass and perform RCA cleaning.

[0043] 7. Using th...

Embodiment 2

[0050] This embodiment includes the following steps:

[0051] 1. Select an N-type silicon substrate with a resistivity of 5-12Ω·cm, whose minority carrier lifetime is greater than 500us, remove the damaged layer on the surface of the silicon wafer by chemical etching, and make texture on both sides.

[0052] 2. Double-sided phosphorus diffusion: the diffusion resistance is 80Ω / □.

[0053] 3. Use laser to remove the phosphosilicate glass in the p+ defined area.

[0054]4. Use 25% TMAH solution to carry out selective etching at 70°C, and polish the p+ defined area, and the etching time is 20 minutes.

[0055] 5. Remove the phosphosilicate glass on the front surface of the n-type silicon substrate, use 1:30:300 hydrofluoric acid, nitric acid and water to etch the front surface of the n-type silicon substrate at 25°C, and the etching time is 20min. The square resistance of the front surface after etching was 130Ω / □.

[0056] 6. Remove the back phosphosilicate glass and perform ...

technical field

[0001] The invention belongs to the technical field of solar cells, and in particular relates to a manufacturing method of an n-type IBC silicon solar cell based on an ion implantation process. Background technique

[0002] Solar cells can directly convert solar energy into electrical energy, which is an effective way to utilize solar energy resources. Since no harmful substances are produced during use, solar cells are favored in solving energy and environmental problems and have a good market prospect. Solar energy is also Known as the most ideal energy source, it is an important resource for the survival and development of human society.

[0003] At present, the mainstream solar cell material uses p-type silicon as the substrate, and forms a pn junction through high-temperature phosphorus diffusion. For p-type silicon materials, because it is insensitive to metal impurities and many non-metal defects, and has fewer boron-oxygen pairs in the body, its perf...

Examples

Embodiment 1

[0036] This embodiment includes the following steps:

[0037] 1. Select an n-type silicon substrate with a resistivity of 3-5Ω·cm, and its minority carrier lifetime is greater than 500us, use chemical etching to remove the damaged layer on the surface of the silicon wafer, and make texture on both sides.

[0038] 2. Double-sided phosphorus diffusion: the diffusion resistance is 60Ω / □.

[0039] 3. Print corrosive paste on the p+ defined area on the back to remove the phosphosilicate glass in the p+ defined area.

[0040] 4. Use 20% TMAH solution to carry out selective etching at 60°C, polish the p+ defined area, and etch for 30 minutes.

[0041] 5. Remove the phosphosilicate glass on the front surface of the n-type silicon substrate, and use hydrofluoric acid, nitric acid and water with a volume ratio of 1:30:300 to etch the front surface of the n-type silicon substrate. 140Ω / □.

[0042] 6. Remove the back phosphosilicate glass and perform RCA cleaning.

[0043] 7. Using th...

Embodiment 2

[0050] This embodiment includes the following steps:

[0051] 1. Select an N-type silicon substrate with a resistivity of 5-12Ω·cm, whose minority carrier lifetime is greater than 500us, remove the damaged layer on the surface of the silicon wafer by chemical etching, and make texture on both sides.

[0052] 2. Double-sided phosphorus diffusion: the diffusion resistance is 80Ω / □.

[0053] 3. Use laser to remove the phosphosilicate glass in the p+ defined area.

[0054]4. Use 25% TMAH solution to carry out selective etching at 70°C, and polish the p+ defined area, and the etching time is 20 minutes.

[0055] 5. Remove the phosphosilicate glass on the front surface of the n-type silicon substrate, use 1:30:300 hydrofluoric acid, nitric acid and water to etch the front surface of the n-type silicon substrate at 25°C, and the etching time is 20min. The square resistance of the front surface after etching was 130Ω / □.

[0056] 6. Remove the back phosphosilicate glass and perform ...

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