Liquid crystal film cutting method and cholesteric liquid crystal film

Abstract

A liquid crystal film cutting method and a cholesteric liquid crystal film, the liquid crystal film comprises a liquid crystal layer and a first conductive layer and a second conductive layer arranged on both sides of the liquid crystal layer. The cutting method of the present invention is cut by combining full cutting and half cutting, wherein the half cutting only cuts to the position between the first conductive layer and the second conductive layer, and does not cut the liquid crystal film, while the full cutting directly cuts the liquid crystal film, and by controlling the size of the pattern during the half cutting and the full cutting, the edge of the cut liquid crystal film unit can form a step surface, ensuring that the cutting surface of the first conductive layer and the second conductive layer are not coplanar, thereby avoiding the first conductive layer and the second conductive layer from being combined together due to cutting. The liquid crystal film cutting method of the present invention can not only conveniently cut out the liquid crystal film unit of the expected pattern, but also avoid the disadvantages of traditional cutting, and ensure the electrical performance of the liquid crystal film, and it has strong practicality and should be vigorously promoted.

Description

[Technical field]

[0001] The present invention relates to the technical field of cutting technology, and in particular to a liquid crystal film cutting method and a cholesteric liquid crystal film formed by the cutting method. [Background technology]

[0002] Cholesteric liquid crystal film is a common liquid crystal film with bistable characteristics. It is widely used in handwriting tablets, electronic reading devices, etc. It can present handwriting due to pressure, and it does not consume electricity to maintain the handwriting. When the handwriting needs to be cleared, it is usually cleared by applying an electric field to change the state of the cholesteric liquid crystal molecules. The cholesteric liquid crystal film usually includes a first substrate, a first conductive layer 7, a liquid crystal layer 9, a second conductive layer 8 and a second substrate in sequence. The first conductive layer 7 and the second conductive layer 8 are used to pass an electric field to drive the liquid crystal material in the liquid crystal layer 9 to change state. In large-scale production, a roll-to-roll production method is usually adopted. The processed liquid crystal film is a roll of large-sized liquid crystal film. Then, according to product requirements, the large-sized liquid crystal film is cut into liquid crystal film units of the required size, and then the liquid crystal film units are further processed, for example, pins are set, bottom shell assembly is performed, etc., so that the liquid crystal film is processed into handwriting tablets, electronic readers and other products for shipment.

[0003] When cutting a large-sized liquid crystal film into liquid crystal film units of a required size, laser cutting or mold cutting is usually used. The traditional cutting method is to directly cut the large-sized liquid crystal film according to the required size. This cutting method will cause the first conductive layer 7 and the second conductive layer 8 at the cutting point to be combined together, thereby causing the electrical properties of the liquid crystal film to be destroyed, which can easily cause a short circuit problem, making it impossible for the product's drive system to power on the liquid crystal film normally and unable to complete the handwriting clearing action. [Summary of the invention]

[0004] The present invention aims to solve the above problems and provides a liquid crystal film cutting method and a cholesteric liquid crystal film which will not cause the first conductive layer and the second conductive layer of the liquid crystal film to be combined.

[0005] To achieve the above object, the present invention provides a method for cutting a liquid crystal film, wherein the liquid crystal film comprises a liquid crystal layer and a first conductive layer and a second conductive layer disposed on both sides of the liquid crystal layer, wherein the cutting method comprises:

[0006] Half-cutting process: using a cutting tool to cut the liquid crystal film along a first cutting line, the cutting depth of which goes deep into the position between the first conductive layer and the second conductive layer of the liquid crystal film;

[0007] Full cutting process: using a cutting tool to cut the liquid crystal film along the second cutting line, the cutting depth can cut the liquid crystal film along the thickness direction of the liquid crystal film so that the liquid crystal film of the first size is cut into a plurality of separate liquid crystal films of the second size;

[0008] The first size is larger than the second size, and the cutting position of the first cutting line falls within the cutting position range of the second cutting line.

[0009] Further, the half-cutting process is performed first, and then the full-cutting process is performed; when the liquid crystal film is cut along the first cutting line by using a cutting tool, the liquid crystal film is a liquid crystal film of a first size.

[0010] Further, the full-cutting process is performed first, and then the half-cutting process is performed. When the liquid crystal film is cut along the first cutting line by using a cutting tool, the liquid crystal film is a liquid crystal film of the second size.

[0011] Furthermore, the half-cutting process and the full-cutting process are performed simultaneously, and the cutting tool is provided with a first cutting head and a second cutting head which are spaced apart in parallel, and the cutting depth of the first cutting head is smaller than the cutting depth of the second cutting head.

[0012] Furthermore, the cutting tool is a laser cutter, which uses a first cutting energy to cut the liquid crystal film along a first cutting line, and uses a second cutting energy to cut the liquid crystal film along a second cutting line, and the second cutting energy is greater than the first cutting energy.

[0013] Furthermore, the distance between the edges of the cutting patterns of the first cutting line and the second cutting line is 0.1 to 10 mm.

[0014] Further, it comprises the following steps in sequence:

[0015] Half-cutting process: using a cutting tool to cut the liquid crystal film of the first size along the first cutting line, and the cutting depth is deep enough to the distance between the first conductive layer and the second conductive layer of the liquid crystal film, so that a plurality of liquid crystal film regions of the third size and a scrap region located outside the liquid crystal film region of the third size are formed on the liquid crystal film of the first size;

[0016] Removing scraps: separating the material above the cutting depth in the scrap area on the liquid crystal film of the first size from the liquid crystal film of the first size, so that the material in the liquid crystal film area of ​​the third size is retained on the liquid crystal film of the first size at intervals;

[0017] Full-cutting process: using a cutting tool to cut the liquid crystal film of the first size along the second cutting line, the second cutting line corresponds to the edge of the liquid crystal film area of ​​the third size, and the cutting depth can cut off the entire liquid crystal film along the thickness direction of the liquid crystal film, so that the liquid crystal film of the first size is cut into a plurality of separate liquid crystal films of the second size, and the liquid crystal film of the second size includes the liquid crystal film area of ​​the third size.

[0018] Further, it includes the following steps in sequence:

[0019] Full cutting process: using a cutting tool to cut the liquid crystal film of the first size along the second cutting line, the cutting depth can cut the liquid crystal film along the thickness direction of the liquid crystal film so that the liquid crystal film of the first size is cut into a plurality of separate liquid crystal films of the second size;

[0020] Half-cutting process: using a cutting tool to cut the liquid crystal film of the second size along a first cutting line, the position of the first cutting line is retracted 0.1 to 10 mm from the edge of the liquid crystal film of the second size, and the cutting depth of the cutting tool penetrates to the distance between the first conductive layer and the second conductive layer of the liquid crystal film, so that a liquid crystal film area of ​​the third size and a scrap area located outside the liquid crystal film area of ​​the third size are formed on the liquid crystal film of the second size;

[0021] Removing scraps: separating the material above the cutting depth in the scrap area on the second-sized liquid crystal film from the second-sized liquid crystal film, so that the material in the third-sized liquid crystal film area is completely retained on the second-sized liquid crystal film.

[0022] Furthermore, the cutting patterns of the first cutting line and the second cutting line respectively include a plurality of closed patterns spaced apart from each other.

[0023] In addition, a cholesteric liquid crystal film is provided, which includes a liquid crystal layer and a first conductive layer and a second conductive layer arranged on both sides of the liquid crystal layer. The invention is characterized in that the film is cut by the above-mentioned liquid crystal film cutting method, and the edge outer walls of the first conductive layer and the second conductive layer are both cutting surfaces. The cutting surface of the first conductive layer is not coplanar with the cutting surface of the second conductive layer, but forms a step surface.

[0024] The beneficial contribution of the present invention is that it effectively solves the above-mentioned problem. The cutting method of the present invention is performed by combining full cutting and half cutting, wherein the half cutting only cuts to the position between the first conductive layer and the second conductive layer, and does not cut the liquid crystal film, while the full cutting directly cuts the liquid crystal film, and by controlling the size of the pattern (and the size of the cutting line) during the half cutting and full cutting, the edge of the cut liquid crystal film unit can form a step surface, ensuring that the cutting surface of the first conductive layer and the second conductive layer are not coplanar, thereby avoiding the first conductive layer and the second conductive layer from being combined together due to cutting. The liquid crystal film cutting method of the present invention can not only conveniently cut out the liquid crystal film unit of the expected pattern, but also avoid the shortcomings of traditional cutting, and ensure the electrical performance of the liquid crystal film. It has strong practicality and should be vigorously promoted.

Brief Description of the Drawings

[0025] Figure 1 It is a plan schematic diagram of half-cutting along the first cutting line in Example 1, wherein the dotted line in the figure is the position corresponding to the first cutting line, the left figure is a plan schematic diagram of the liquid crystal film before cutting, and the right figure is a plan schematic diagram of the liquid crystal film after half-cutting.

[0026] Figure 2 It is a plan schematic diagram of full cutting along the second cutting line in Example 1, wherein the dotted line in the figure is the position corresponding to the second cutting line, the left figure is a plan schematic diagram of the liquid crystal film before full cutting, and the right figure is a plan schematic diagram of the liquid crystal film after full cutting.

[0027] Figure 3 It is a cross-sectional view of a liquid crystal film of a second size formed after cutting of Example 1, Example 2, and Example 3, which shows a situation in which the cutting depth of the first cutting line penetrates into the interface between the first conductive layer and the liquid crystal layer.

[0028] Figure 4 It is a plan schematic diagram of full cutting along the second cutting line of Example 2, wherein the dotted line in the figure is the position corresponding to the second cutting line, the left figure is a plan schematic diagram of the liquid crystal film before full cutting, and the right figure is a plan schematic diagram of the liquid crystal film after full cutting.

[0029] Figure 5 It is a plan schematic diagram of half-cutting along the first cutting line of Example 2, wherein the dotted line in the figure is the position corresponding to the first cutting line, the left figure is a plan schematic diagram of the liquid crystal film before half-cutting, and the right figure is a plan schematic diagram of the liquid crystal film after half-cutting.

[0030] Figure 6 It is a plan schematic diagram of Example 3 in which cutting is performed simultaneously along the first cutting line and the second cutting line, wherein the inner dotted line is the position corresponding to the first cutting line, and the outer dotted line is the position corresponding to the second cutting line. The left figure is a plan schematic diagram of the liquid crystal film before cutting, and the right figure is a plan schematic diagram of the liquid crystal film after cutting.

[0031] Figure 7 It is a schematic diagram of the cross-sectional structure of the cholesteric liquid crystal film of Example 4.

[0032] Figure 8 It is a schematic diagram of the cross-sectional structure of the cholesteric liquid crystal film of Example 5.

[0033] Fig. 9 It is a schematic diagram of the cross-sectional structure of the cholesteric liquid crystal film of Example 6.

[0034] Among them, the first cutting line 1, the second cutting line 2, the liquid crystal film 3 of the first size, the liquid crystal film 4 of the second size, the liquid crystal film area 5 of the third size, the scrap area 6, the first conductive layer 7, the second conductive layer 8, the liquid crystal layer 9, the first film layer 10, the second film layer 12, the first substrate 13, the second substrate 14, the first cutting surface 15, the second cutting surface 16, the third cutting surface 17, the fourth cutting surface 18, the fifth cutting surface 19, the third connecting surface 20, the first connecting surface 21, and the second connecting surface 22. [Specific implementation method]

[0035] The following examples are provided to further explain and supplement the present invention and do not constitute any limitation to the present invention.

[0036] Example 1

[0037] The liquid crystal film cutting method of this embodiment comprises the following steps in sequence:

[0038] S1, half-cut process: Figure 1 As shown, a cutting tool is used to cut a first-sized liquid crystal film 3 along a first cutting line 1. In this process, the cutting depth of the cutting tool penetrates to the distance between the first conductive layer 7 and the second conductive layer 8 of the liquid crystal film, and the liquid crystal film is not cut along the thickness direction of the liquid crystal film, and it only cuts to a certain depth; in other words, it only cuts one of the conductive layers, and does not cut the other conductive layer, so that a plurality of third-sized liquid crystal film regions 5 and a scrap region 6 located at the periphery of the third-sized liquid crystal film region 5 are formed on the first-sized liquid crystal film 3. The third-sized liquid crystal film regions 5 are spaced apart from each other due to half-cutting, in other words, the first conductive layer 7 in the third-sized liquid crystal film region 5 and the first conductive layer 7 in the scrap region 6 are separated, and the second conductive layer 8 in the third-sized liquid crystal film region 5 and the second conductive layer 8 in the scrap region 6 remain in their original state and are combined together.

[0039] The cutting tool may be an automatic cutting tool or a manual cutting tool. In this embodiment, the cutting tool is preferably a laser cutter, and its laser light source is CO2, with a wavelength of 9.3 μm and a laser power of 55 W. The cutting tool uses a first cutting energy to cut the liquid crystal film. In this embodiment, it uses 8% of the laser energy for cutting. By controlling the magnitude of the first cutting energy, its cutting depth can be controlled so that when the cutting tool cuts along the first cutting line 1, it only cuts between the first conductive layer 7 and the second conductive layer 8 without cutting the liquid crystal film. The selection of the first cutting energy can be set according to the material properties of the liquid crystal film. For different liquid crystal films, the required first cutting energy may be different. In specific implementation, the appropriate first cutting energy can be determined through multiple tests.

[0040] In other embodiments, the cutting tool may also be other cutting tools, for example, a manual cutting tool may be selected for manual cutting, and the cutting method is similar, except that the cutting tool and the use of the cutting tool are slightly different.

[0041] The pattern of the first cutting line 1 can be set according to the required size of the liquid crystal film. For the need to cut a plurality of liquid crystal film regions 5 of the third size on the liquid crystal film 3 of the first size, the pattern of the first cutting line 1 should be designed to include a plurality of closed patterns, each of which is spaced apart from the other, and the size of each closed pattern determines the size of the liquid crystal film region 5 of the third size and the scrap region 6 after cutting. The pattern of the first cutting line 1 is pre-stored in the cutting tool, and the cutting tool can cut the liquid crystal film 3 of the first size according to the predetermined pattern, thereby forming a plurality of liquid crystal film regions 5 of the third size and the scrap region 6 (such as the third size) on the liquid crystal film 3 of the first size. Figure 1 shown).

[0042] After the half-cutting process is completed, the following steps will be entered:

[0043] S2, removing scraps: separating the materials above the cutting depth in the scrap area 6 on the liquid crystal film 3 of the first size from the liquid crystal film 3 of the first size, so that the material layers in the liquid crystal film area 5 of the third size are all retained on the liquid crystal film 3 of the first size at intervals, and the liquid crystal layer 9 or the conductive layer of the bottom layer is exposed in the scrap area 6; the materials of the scraps removed are slightly different according to the cutting depth. For example, in some embodiments, if the first conductive layer 7 is cut along the direction of the second conductive layer 8 to the interface between the first conductive layer 7 and the liquid crystal layer 9, the scraps removed include the first substrate and the first conductive layer 7 located in the scrap area 6, and the liquid crystal layer 9, the second conductive layer 8, and the second substrate in the scrap area 6 are retained on the liquid crystal film 3 of the first size. In some embodiments, if the first conductive layer 7 is cut along the direction of the second conductive layer 8 to the interface between the liquid crystal layer 9 and the second conductive layer 8, the removed scraps include the first substrate, the first conductive layer 7 and the liquid crystal layer 9 located in the scrap area 6, and the second conductive layer 8 and the second substrate in the scrap area 6 are retained on the liquid crystal film 3 of the first size. In some embodiments, if the first conductive layer 7 is cut along the direction of the second conductive layer 8 to the liquid crystal layer 9, the removed scraps include the first substrate, the first conductive layer 7 and the liquid crystal layer 9 located in the scrap area 6, and the liquid crystal layer 9, the second conductive layer 8 and the second substrate in the scrap area 6 are retained on the liquid crystal film 3 of the first size. The removed scraps are determined by the cutting depth, which are the material layers above the cutting depth in the scrap area 6.

[0044] Since the material properties of each material layer of the liquid crystal film are different and the size of the scrap area 6 is small, the material above the cutting depth in the scrap area 6 can be torn off from the liquid crystal film by tearing, so that the liquid crystal layer 9 or the conductive layer that has not been cut is directly exposed between the liquid crystal film areas 5 of the third size.

[0045] Since the liquid crystal film area 5 of the third size is a closed area formed on the liquid crystal film 3 of the first size during the half-cutting process, the scrap area 6 is continuous. In this way, when tearing the scrap area 6, the part to be removed in the entire scrap area 6 can be directly torn off from the liquid crystal film 3 of the first size at one time, thereby greatly improving the processing efficiency.

[0046] After the scraps are separated from the liquid crystal film 3 of the first size, the following steps are performed:

[0047] S3, full cutting process: Figure 2As shown, a cutting tool is used to cut a liquid crystal film 3 of a first size along a second cutting line 2; in this process, the pattern of the second cutting line 2 is formed by uniformly expanding the edge of the pattern of the first cutting line 1 outward, and the expansion distance is 0.1 to 10 mm. In this embodiment, it is preferably 0.2 mm. Since the pattern size of the second cutting line 2 is larger than the pattern size of the first cutting line 1, when the cutting tool is cut along the second cutting line 2, its cutting position will fall on the periphery of the liquid crystal film area 5 of the third size, that is, it will fall within the range of the exposed liquid crystal layer 9 or the conductive layer that has not been cut. The cutting depth of the cutting tool can cut off the entire liquid crystal film along the thickness direction of the liquid crystal film, so that the liquid crystal film 3 of the first size is cut into a plurality of separate liquid crystal films 4 of the second size (such as Figure 2 shown).

[0048] In this embodiment, the cutting tool is preferably a laser cutter, and its laser light source is CO2, with a wavelength of 9.3μm and a laser power of 55W. In this process, the cutting tool uses the second cutting energy to cut the liquid crystal film. In this embodiment, it uses 16% of the laser energy for cutting. By controlling the magnitude of the second cutting energy, the liquid crystal film can be cut along the thickness direction of the liquid crystal film. The selection of the second cutting energy can be set according to the material properties of the liquid crystal film. For different liquid crystal films, the required first cutting energy may be different. In specific implementation, the appropriate first cutting energy can be determined through multiple tests.

[0049] Since the pattern size of the second cutting line 2 is larger than the pattern size of the first cutting line 1, the second size is larger than the third size, that is, the liquid crystal film 4 of the second size formed by cutting completely includes the liquid crystal film area 5 of the third size. The liquid crystal film 4 of the second size is the required liquid crystal film unit, and the edges thereof form step surfaces (such as Figure 3 As shown), that is, only one conductive layer is retained at the edge, while the first conductive layer 7 and the second conductive layer 8 are completely retained in the liquid crystal film area 5 of the third size inside the edge. In this way, the cut surfaces of the first conductive layer 7 and the second conductive layer 8 are not located in the same plane, avoiding the first conductive layer 7 and the second conductive layer 8 from sticking or combining, thereby ensuring the electrical performance of the liquid crystal film after cutting.

[0050] In addition, the edge of the liquid crystal film formed by the half-cutting and full-cutting processes is formed with a step, which can not only prevent the first conductive layer 7 and the second conductive layer 8 from sticking or combining, but also facilitate the edge sealing by gluing at the step surface. For example, for a large-sized liquid crystal product, the liquid crystal film is large in size, and the liquid crystal material in the liquid crystal layer 9 has a certain fluidity. At this time, glue can be applied on the step, and after the glue is cured, it can play an edge sealing role to prevent the liquid crystal material in the liquid crystal layer 9 from flowing out.

[0051] Example 2

[0052] The liquid crystal film cutting method of this embodiment comprises the following steps in sequence:

[0053] S1, full cutting process: Figure 4 As shown, a cutting tool is used to cut a liquid crystal film 3 of a first size along a second cutting line 2, and the cutting depth can cut the liquid crystal film along the thickness direction of the liquid crystal film so that the liquid crystal film 3 of the first size is cut into a plurality of separate liquid crystal films 4 of a second size. The second size is smaller than the first size.

[0054] In this process, the cutting tool is preferably a laser cutter, and its laser light source is CO2, with a wavelength of 9.3μm and a laser power of 55W. In this process, the cutting tool uses the second cutting energy to cut the liquid crystal film. In this embodiment, it uses 16% of the laser energy for cutting. By controlling the magnitude of the second cutting energy, the liquid crystal film can be cut along the thickness direction of the liquid crystal film. The selection of the second cutting energy can be set according to the material properties of the liquid crystal film. For different liquid crystal films, the required first cutting energy may be different. In specific implementation, the appropriate first cutting energy can be determined through multiple tests.

[0055] The pattern of the second cutting line 2 can be set according to the required size of the liquid crystal film. For the need to cut a plurality of liquid crystal films 4 of the second size from the liquid crystal film 3 of the first size, the pattern of the second cutting line 2 should be designed to include a plurality of closed patterns, each of which is spaced apart from the other, and the size of the closed patterns determines the size of the liquid crystal film 4 of the second size after cutting. The pattern of the second cutting line 2 is pre-stored in the cutting tool, and the cutting tool can cut the liquid crystal film 3 of the first size according to the predetermined pattern, thereby cutting a plurality of liquid crystal films 4 of the second size.

[0056] The material layer of the cut liquid crystal film 4 of the second size is consistent with the material layer of the liquid crystal film 3 of the first size, and the difference lies in the shape and size.

[0057] When the full cutting process is completed, the following steps will be entered:

[0058] S2, half-cut process: Figure 5As shown, a single liquid crystal film 4 of the second size is cut along a first cutting line 1 using a cutting tool, the position of the first cutting line 1 is retracted 0.1 to 10 mm inward from the edge of the liquid crystal film 4 of the second size, and the cutting depth of the cutting tool penetrates into between the first conductive layer 7 and the second conductive layer 8 of the liquid crystal film, so that a liquid crystal film area 5 of the third size and a scrap area 6 located at the periphery of the liquid crystal film area 5 of the third size are formed on the liquid crystal film 4 of the second size.

[0059] In this process, the cutting tool is preferably a laser cutter, and its laser light source is CO2, with a wavelength of 9.3μm and a laser power of 55W. The cutting tool uses the first cutting energy to cut the liquid crystal film 4 of the second size. In this embodiment, it uses 8% of the laser energy for cutting. By controlling the size of the first cutting energy, its cutting depth can be controlled so that when the cutting tool cuts along the first cutting line 1, it only cuts between the first conductive layer 7 and the second conductive layer 8 without cutting off the liquid crystal film. The selection of the first cutting energy can be set according to the material properties of the liquid crystal film. For different liquid crystal films, the required first cutting energy may be different. In specific implementation, the appropriate first cutting energy can be determined through multiple tests.

[0060] The pattern of the first cutting line 1 is formed by shrinking the edge of the liquid crystal film 4 of the second size inwardly, and is a closed pattern whose size is smaller than the second size.

[0061] Since the liquid crystal film 3 of the first size is cut into a plurality of independent liquid crystal films 4 of the second size in step S1 , when the liquid crystal film 4 of the second size is cut in half in step S2 , the liquid crystal films 4 of the second size are cut one by one.

[0062] After the half-cutting process is completed, the following steps will be entered:

[0063] S3. Removing scraps: separating the material above the cutting depth in the scrap area 6 on the second-sized liquid crystal film 4 from the second-sized liquid crystal film 4, so that the material in the third-sized liquid crystal film area 5 is completely retained on the second-sized liquid crystal film 4, while the liquid crystal layer 9 or the bottom conductive layer that has not been cut is exposed in the scrap area 6.

[0064] Depending on the cutting depth, the material of the removed scraps is slightly different. For example, in some embodiments, if the first conductive layer 7 is cut along the direction of the second conductive layer 8 to the interface between the first conductive layer 7 and the liquid crystal layer 9, the removed scraps include the first substrate and the first conductive layer 7 located in the scrap area 6, and the liquid crystal layer 9, the second conductive layer 8, and the second substrate in the scrap area 6 are retained on the liquid crystal film 4 of the second size. In some embodiments, if the first conductive layer 7 is cut along the direction of the second conductive layer 8 to the interface between the liquid crystal layer 9 and the second conductive layer 8, the removed scraps include the first substrate, the first conductive layer 7, and the liquid crystal layer 9 located in the scrap area 6, and the second conductive layer 8 and the second substrate in the scrap area 6 are retained on the liquid crystal film 4 of the second size. In some embodiments, if the first conductive layer 7 is cut along the direction of the second conductive layer 8 to the liquid crystal layer 9, the removed scraps include the first substrate, the first conductive layer 7 and the liquid crystal layer 9 located in the scrap area 6, and the liquid crystal layer 9, the second conductive layer 8 and the second substrate in the scrap area 6 are retained on the liquid crystal film 4 of the second size. The removed scraps are determined by the cutting depth, which are the material layers above the cutting depth in the scrap area 6.

[0065] Since the material properties of the material layers of the liquid crystal film are different and the size of the scrap area 6 is small, the material above the cutting depth in the scrap area 6 can be torn off from the liquid crystal film by tearing, so that the liquid crystal layer 9 or the conductive layer not cut is directly exposed outside the edge of the liquid crystal film area 5 of the third size, thereby forming a step surface (such as Figure 3 As shown), that is, only one conductive layer is retained at the edge, while the first conductive layer 7 and the second conductive layer 8 are completely retained in the liquid crystal region of the third size inside the edge. In this way, the cut surfaces of the first conductive layer 7 and the second conductive layer 8 are not located in the same plane, avoiding the first conductive layer 7 and the second conductive layer 8 from sticking or combining, thereby ensuring the electrical performance of the liquid crystal film after cutting.

[0066] Example 3

[0067] The liquid crystal film cutting method of this embodiment includes the following steps:

[0068] S1. Perform full and half resection at the same time: Figure 6 As shown, a cutting tool is used to simultaneously cut the liquid crystal film 3 of a first size along a first cutting line 1 and a second cutting line 2 so that the liquid crystal film 3 of the first size is cut into a plurality of separate liquid crystal films 4 of a second size.

[0069] In this process, the first cutting line 1 is a half-cut track, and its cutting depth only goes deep into the space between the first conductive layer 7 and the second conductive layer 8 of the liquid crystal film. It does not cut the liquid crystal film along the thickness direction of the liquid crystal film, and it only cuts to a certain depth; in other words, it only cuts one conductive layer, and does not cut the other conductive layer; the second cutting line 2 is a full-cut track, and its cutting depth can cut the liquid crystal film along the thickness direction of the liquid crystal film. The positions of the first cutting line 1 and the second cutting line 2 are different. The second cutting line 2 is formed by uniformly expanding the periphery of the first cutting line 1 outward, thereby ensuring that the cutting area during full cutting is larger than the cutting area during half cutting.

[0070] The cutting tool may be a mold cutter, which is provided with a first cutting head and a second cutting head spaced in parallel. The distance between the first cutting head and the second cutting head is between 0.1 and 10 mm, and in the present embodiment, it is preferably 2 mm. In this way, when the cutting tool is cutting, the first cutting head and the second cutting head will form two parallel and spaced cuts. The distance between the two cuts is the distance between the first cutting line 1 and the second cutting line 2. The cutting depth of the first cutting head is less than the cutting depth of the second cutting head, wherein the first cutting head is used to half-cut the liquid crystal film 3 of the first size along the first cutting line 1, and the second cutting head is used to fully cut the liquid crystal film 3 of the first size along the second cutting line 2.

[0071] When the first cutting head and the second cutting head of the cutting tool simultaneously cut the liquid crystal film 3 of the first size along the first cutting line 1 and the second cutting line 2, the first cutting head will cut out a liquid crystal film area 5 of the third size by half cutting, and the second cutting head will cut out a single liquid crystal film 4 of the second size in sequence by full cutting. The third size is smaller than the second size and is concentric, so that when cutting at the same time, a single liquid crystal film 4 of the second size can be cut out from the liquid crystal film 3 of the first size, and the liquid crystal film 4 of the second size will be separated from the liquid crystal film 3 of the first size, and a liquid crystal film area 5 of the third size and a scrap area 6 located outside the edge of the liquid crystal film area 5 of the third size are formed in the center of the liquid crystal film 4 of the second size. The width of the scrap area 6 is consistent with the distance between the first cutting head and the second cutting head.

[0072] The patterns of the first cutting line 1 and the second cutting line 2 can be set according to the required size of the liquid crystal film. For the need to cut a number of liquid crystal films 4 of the second size on the liquid crystal film 3 of the first size, the patterns of the first cutting line 1 and the second cutting line 2 should be designed to include a number of closed patterns, each of which is spaced apart from the other, and the size thereof determines the size of the liquid crystal film 4 of the second size and the liquid crystal film region 5 of the third size after cutting. The patterns of the first cutting line 1 and the second cutting line 2 are pre-stored in the cutting tool. The cutting tool cuts the liquid crystal film 3 of the first size according to the predetermined pattern, and can cut a number of liquid crystal films 4 of the second size, and cut a liquid crystal film region 5 of the third size on the liquid crystal film 4 of the second size.

[0073] S2. Removing scraps: separating the material above the cutting depth in the scrap area 6 on the second-sized liquid crystal film 4 from the second-sized liquid crystal film 4, so that the material in the third-sized liquid crystal film area 5 is completely retained on the second-sized liquid crystal film 4, while the liquid crystal layer 9 or the conductive layer of the bottom layer that has not been cut is exposed in the scrap area 6.

[0074] Depending on the cutting depth, the material of the removed scraps is slightly different. For example, in some embodiments, if the first cutting head cuts from the first conductive layer 7 along the direction of the second conductive layer 8 to the interface between the first conductive layer 7 and the liquid crystal layer 9, the removed scraps include the first substrate and the first conductive layer 7 located in the scrap area 6, and the liquid crystal layer 9, the second conductive layer 8, and the second substrate in the scrap area 6 are retained on the liquid crystal film 4 of the second size. In some embodiments, if the first cutting head cuts from the first conductive layer 7 along the direction of the second conductive layer 8 to the interface between the liquid crystal layer 9 and the second conductive layer 8, the removed scraps include the first substrate, the first conductive layer 7, and the liquid crystal layer 9 located in the scrap area 6, and the second conductive layer 8 and the second substrate in the scrap area 6 are retained on the liquid crystal film 4 of the second size. In some embodiments, if the first cutting head cuts from the first conductive layer 7 along the direction of the second conductive layer 8 to the liquid crystal layer 9, the removed scraps include the first substrate, the first conductive layer 7 and the liquid crystal layer 9 located in the scrap area 6, and the liquid crystal layer 9, the second conductive layer 8 and the second substrate in the scrap area 6 are retained on the liquid crystal film 4 of the second size. The removed scraps are determined by the cutting depth of the first cutting head, which are the material layers above the cutting depth in the scrap area 6, and only one of the conductive layers.

[0075] Since the material properties of each material layer of the liquid crystal film are different and the size of the scrap area 6 is small, the material above the cutting depth in the scrap area 6 can be torn off the liquid crystal film by tearing, so that the liquid crystal layer 9 or the uncut conductive layer is directly exposed outside the edge of the liquid crystal film area 5 of the third size, thereby forming a step surface at the edge of the liquid crystal film 4 of the second size, that is, only one conductive layer is retained at the edge of the liquid crystal film 4 of the second size, and the first conductive layer 7 and the second conductive layer 8 are completely retained in the liquid crystal area of ​​the third size inside the edge. In this way, the cutting surfaces of the first conductive layer 7 and the second conductive layer 8 are not located in the same plane, avoiding adhesion or combination of the first conductive layer 7 and the second conductive layer 8, thereby ensuring the electrical performance of the liquid crystal film after cutting.

[0076] The above-mentioned embodiments 1, 2 and 3 all adopt a process combining half-cutting and full-cutting for cutting. Half-cutting can remove one of the conductive layers, while full-cutting can cut off the entire liquid crystal film. By controlling the positions of half-cutting and full-cutting, the half-cutting position falls within the area of ​​the full-cutting position, so that a step surface (such as Figure 3 As shown), the edge of the first conductive layer 7 includes only one conductive layer, while the inside retains two conductive layers intact, so that the cutting surfaces of the first conductive layer 7 and the second conductive layer 8 are located in different planes, avoiding the first conductive layer 7 and the second conductive layer 8 from sticking or combining. For Example 1, half cutting is first performed and then full cutting is performed. Since the liquid crystal film is not cut during half cutting, the subsequent process can be operated on the liquid crystal film of the original size, which can not only remove the scraps at one time, but also greatly improve the processing efficiency. In Example 1, Example 2 and Example 3, the cutting tool is preferably an automatic cutter. In other embodiments, a manual cutter can also be used to replace the automatic cutting by the machine with manual cutting by the worker. The method is the same, and the difference lies in the slight difference in efficiency and the use of tools.

[0077] Example 4

[0078] This embodiment provides a cholesteric liquid crystal film.

[0079] like Figure 7As shown, the cholesteric liquid crystal film includes a liquid crystal layer 9 and a first film layer 10 and a second film layer 12 arranged on both sides of the liquid crystal layer 9. The first film layer 10 and the second film layer 12 are general terms for all functions arranged on both sides of the liquid crystal layer 9, wherein the first film layer 10 at least includes a first substrate 13 and a first conductive layer 7, and the second film layer 12 at least includes a second substrate 14 and a second conductive layer 8. The structures of the first film layer 10 and the second film layer 12 are film layers with known functions, which may include a variety of different functional layers. Furthermore, the first conductive layer 7 should be located in the layer of the first film layer 10 that is compounded with the liquid crystal layer 9, and the second conductive layer 8 should be located in the layer of the second film layer 12 that is compounded with the liquid crystal layer 9. The plane size of the cholesteric liquid crystal film can be set as required.

[0080] The edge outer walls of the first conductive layer 7 and the second conductive layer 8 are not coplanar but form a stepped surface, wherein the distance between the edge outer walls of the first conductive layer 7 and the second conductive layer 8 is 0.1 to 10 mm. The cholesteric liquid crystal film of the present invention is cut from a large-size liquid crystal film, and therefore, the edge outer walls of the first conductive layer 7 and the second conductive layer 8 are both cutting surfaces, which are formed by cutting by the cutting method of Embodiment 1, Embodiment 2 or Embodiment 3. Usually, the first conductive layer 7 and the second conductive layer 8 are also provided with a first substrate 13 and a second substrate 14 on the outside. When cutting, the cholesteric liquid crystal film of the present invention is cut from the large-size liquid crystal film, and the first substrate 13 and the second substrate 14 are inevitably cut. Therefore, the structural features of the outer edges of the first conductive layer 7 and the second conductive layer 8 correspond to the structural features of the first film layer 10 and the second film layer 12 according to the cutting features. For the convenience of description, the edge outer wall of the first film layer 10 is called the first cutting surface 15, which is formed by cutting; the edge outer wall of the liquid crystal layer 9 is called the second cutting surface 16, which is formed by cutting; the edge outer wall of the second film layer 12 is called the third cutting surface 17, which is formed by cutting.

[0081] like Figure 7 As shown, the first cutting surface 15 and the second cutting surface 16 are coplanar, and the third cutting surface 17 extends out of the first cutting surface 15 and the second cutting surface 16 to form a stepped surface. When cutting according to the cutting method of the present application, the cutting tool cuts from the first film layer 10 during half-cutting, and the first conductive layer 7 is cut to the interface between the liquid crystal layer 9 and the second conductive layer 8. The first cutting surface 15 and the second cutting surface 16 are formed by the half-cutting process, and the third cutting surface 17 is formed by the full-cutting process.

[0082] In this embodiment, the step surface includes a first cutting surface 15, a second cutting surface 16, a third cutting surface 17 and a first connecting surface 21 connected between the second cutting surface 16 and the third cutting surface 17. The first connecting surface 21 is formed by the surface of the second film layer 12. More specifically, the first connecting surface 21 is formed by the boundary surface of the second conductive layer 8 combined with the liquid crystal layer 9. The first connecting surface 21 is perpendicular to the first cutting surface 15, the second cutting surface 16 and the third cutting surface 17 respectively. The distance between the first cutting surface 15 and the third cutting surface 17 is about 0.1 to 10 mm. In this embodiment, it is preferably 2 MM.

[0083] Example 5

[0084] This embodiment provides a cholesteric liquid crystal film.

[0085] like Figure 8 As shown, the cholesteric liquid crystal film includes a liquid crystal layer 9 and a first film layer 10 and a second film layer 12 arranged on both sides of the liquid crystal layer 9. The first film layer 10 and the second film layer 12 are general terms for all functions arranged on both sides of the liquid crystal layer 9, wherein the first film layer 10 at least includes a first substrate 13 and a first conductive layer 7, and the second film layer 12 at least includes a second substrate 14 and a second conductive layer 8. The structures of the first film layer 10 and the second film layer 12 are film layers with known functions, which may include a variety of different functional layers. Furthermore, the first conductive layer 7 should be located in the layer of the first film layer 10 that is compounded with the liquid crystal layer 9, and the second conductive layer 8 should be located in the layer of the second film layer 12 that is compounded with the liquid crystal layer 9. The plane size of the cholesteric liquid crystal film can be set as required.

[0086] The edge outer walls of the first conductive layer 7 and the second conductive layer 8 are not coplanar but form a stepped surface, wherein the distance between the edge outer walls of the first conductive layer 7 and the second conductive layer 8 is 0.1 to 10 mm. The cholesteric liquid crystal film of the present invention is cut from a large-size liquid crystal film, and therefore, the edge outer walls of the first conductive layer 7 and the second conductive layer 8 are both cutting surfaces, which are formed by cutting by the cutting method of Embodiment 1, Embodiment 2 or Embodiment 3. Usually, the first conductive layer 7 and the second conductive layer 8 are also provided with a first substrate 13 and a second substrate 14 on the outside. When cutting, the cholesteric liquid crystal film of the present invention is cut from the large-size liquid crystal film, and the first substrate 13 and the second substrate 14 are inevitably cut. Therefore, the structural features of the outer edges of the first conductive layer 7 and the second conductive layer 8 correspond to the structural features of the first film layer 10 and the second film layer 12 according to the cutting features. For the convenience of description, the edge outer wall of the first film layer 10 is called the first cutting surface 15, which is formed by cutting; the edge outer wall of the liquid crystal layer 9 is called the second cutting surface 16, which is formed by cutting; the edge outer wall of the second film layer 12 is called the third cutting surface 17, which is formed by cutting.

[0087] like Figure 8 As shown, the second cutting surface 16 is coplanar with the third cutting surface 17, and extends out of the first cutting surface 15 to form a stepped surface. In other words, when cutting according to the cutting method of the present application, the cutting tool cuts from the first film layer 10 during half-cutting, and cuts the first conductive layer 7 to the interface between the first conductive layer 7 and the liquid crystal layer 9. The first cutting surface 15 is formed by the half-cutting process, and the second cutting surface 16 and the third cutting surface 17 are formed by the full-cutting process.

[0088] In this embodiment, the step surface includes a first cutting surface 15, a second cutting surface 16, a third cutting surface 17 and a second connecting surface 22 connected between the first cutting surface 15 and the second cutting surface 16. The second connecting surface 22 is formed by the surface of the liquid crystal layer 9. The second connecting surface 22 is perpendicular to the first cutting surface 15, the second cutting surface 16 and the third cutting surface 17. Among them, the distance between the first cutting surface 15 and the third cutting surface 17 is about 0.1-10 mm, and in this embodiment, it is preferably 4 MM.

[0089] Example 6

[0090] This embodiment provides a cholesteric liquid crystal film.

[0091] like Fig. 9 As shown, the cholesteric liquid crystal film includes a liquid crystal layer 9 and a first film layer 10 and a second film layer 12 arranged on both sides of the liquid crystal layer 9. The first film layer 10 and the second film layer 12 are general terms for all functions arranged on both sides of the liquid crystal layer 9, wherein the first film layer 10 at least includes a first substrate 13 and a first conductive layer 7, and the second film layer 12 at least includes a second substrate 14 and a second conductive layer 8. The structures of the first film layer 10 and the second film layer 12 are film layers with known functions, which may include a variety of different functional layers. Furthermore, the first conductive layer 7 should be located in the layer of the first film layer 10 that is compounded with the liquid crystal layer 9, and the second conductive layer 8 should be located in the layer of the second film layer 12 that is compounded with the liquid crystal layer 9. The plane size of the cholesteric liquid crystal film can be set as required.

[0092] The edge outer walls of the first conductive layer 7 and the second conductive layer 8 are not coplanar but form a stepped surface, wherein the distance between the edge outer walls of the first conductive layer 7 and the second conductive layer 8 is 0.1 to 10 mm. The cholesteric liquid crystal film of the present invention is cut from a large-size liquid crystal film, therefore, the edge outer walls of the first conductive layer 7 and the second conductive layer 8 are both cutting surfaces, which are formed by cutting by the cutting method of the present invention. Usually, the first conductive layer 7 and the second conductive layer 8 are also provided with a first substrate 13 and a second substrate 14 on the outside. When cutting, the cholesteric liquid crystal film of the present invention is cut from the large-size liquid crystal film, and the first substrate 13 and the second substrate 14 are inevitably cut. Therefore, the structural characteristics of the edge outer sides of the first conductive layer 7 and the second conductive layer 8 correspond to the structural characteristics of the first film layer 10 and the second film layer 12 according to the cutting characteristics. For the convenience of description, the edge outer wall of the first film layer 10 is called the first cutting surface 15, which is formed by cutting; the edge outer wall of the liquid crystal layer 9 is called the second cutting surface 16, which is formed by cutting; the edge outer wall of the second film layer 12 is called the third cutting surface 17, which is formed by cutting.

[0093] like Fig. 9 As shown, the second cutting surface 16 is stepped, including the fourth cutting surface 18, the fifth cutting surface 19 and the third connecting surface 20 connected between the fourth cutting surface 18 and the fifth cutting surface 19, the fourth cutting surface 18 is coplanar with the first cutting surface 15, the fifth cutting surface 19 is coplanar with the second cutting surface 16, and the fourth cutting surface 18, the fourth cutting surface 18, the third connecting surface 20, the fifth cutting surface 19, and the second cutting surface 16 form the stepped surface. In other words, when cutting according to the cutting method of the present invention, the cutting depth of the half-cut process penetrates into the liquid crystal layer 9, so that the edge of the cholesteric liquid crystal film forms a stepped surface at the liquid crystal layer 9. The third connecting surface 20 is formed by the surface exposed by the delamination of the liquid crystal layer 9, and the whole can be regarded as a plane, but in reality, it may be in an uneven state. The distance between the fourth cutting surface 18 and the fifth cutting surface 19 is 0.1-10mm, and in this embodiment, it is preferably 0.2MM.

[0094] Although the present invention is disclosed through the above embodiments, the scope of the present invention is not limited thereto, and the above components may be replaced with similar or equivalent elements known to those skilled in the art without departing from the concept of the present invention.

Claims

1. A method for cutting a liquid crystal film, wherein the liquid crystal film comprises a liquid crystal layer (9) and a first conductive layer (7) and a second conductive layer (8) arranged on both sides of the liquid crystal layer (9), characterized in that: The cutting method includes: Full cutting process: using a cutting tool to cut the liquid crystal film along the second cutting line (2), the cutting depth of which can cut the liquid crystal film along the thickness direction of the liquid crystal film so that the liquid crystal film (3) of the first size is cut into a plurality of separate liquid crystal films (4) of the second size; Half-cutting process: using a cutting tool to cut the liquid crystal film along a first cutting line (1), wherein the cutting depth reaches the position between the first conductive layer (7) and the second conductive layer (8) of the liquid crystal film, thereby forming a liquid crystal film region (5) of a third size and a scrap region (6) located outside the liquid crystal film region (5) of the third size on the liquid crystal film (4) of the second size; The half-cutting process and the full-cutting process are carried out simultaneously, and the cutting tool is a mold cutter, which is provided with a first cutting head and a second cutting head spaced in parallel, the distance between the first cutting head and the second cutting head is 0.1 to 10 mm, and the cutting depth of the first cutting head is less than the cutting depth of the second cutting head; the first cutting head and the second cutting head respectively half-cut and fully cut the liquid crystal film 3 belonging to the same second size area along the first cutting line and the second cutting line to form a single liquid crystal film of the second size, the first size is larger than the second size, and the cutting position of the first cutting line (1) falls within the cutting position range of the second cutting line (2).

2. The liquid crystal film cutting method according to claim 1, wherein: The distance between the cutting pattern edges of the first cutting line (1) and the second cutting line (2) is 0.1 to 10 mm.

3. The liquid crystal film cutting method according to claim 1, characterized in that: It also includes the following steps: Removing scraps: separating the material above the cutting depth in the scrap area (6) on the liquid crystal film (4) of the second size from the liquid crystal film (4) of the second size, so that the material in the liquid crystal film area (5) of the third size is completely retained on the liquid crystal film (4) of the second size.

4. The liquid crystal film cutting method according to claim 1, characterized in that: The cutting patterns of the first cutting line (1) and the second cutting line (2) respectively include a plurality of closed patterns spaced apart from each other.

5. A cholesteric liquid crystal film, comprising a liquid crystal layer (9) and a first conductive layer (7) and a second conductive layer (8) arranged on both sides of the liquid crystal layer (9), characterized in that: It is cut by the liquid crystal film cutting method as claimed in any one of claims 1 to 4, and the edge outer walls of the first conductive layer (7) and the second conductive layer (8) are both cutting surfaces, and the cutting surface of the first conductive layer and the cutting surface of the second conductive layer are not coplanar but form a stepped surface.

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