Electroluminescent device

By designing a structure including inorganic multilayers, planarization layers, reflective electrodes, pixel-defined layers, intermediate multilayers and semi-transparent electrodes in the electroluminescent device, the pixel damage problems caused by light entry and laser irradiation are solved, and high Transparent and high reliability light transmission area.

CN110021640BActive Publication Date: 2025-02-11SAMSUNG DISPLAY CO LTD
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Patent Information

Application Number
CN201910004791.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2018-07-30
Filing Date
2019-01-03
Publication Date
2025-02-11
Estimated Expiration
2039-01-03

AI Technical Summary

Technical Problem

In the electroluminescent device, the design of the light transmission area has problems with light entry and the problem of pixel damage caused by laser irradiation, and the removal of the shared intermediate layer and upper electrode is not complete.

Method used

An electroluminescent device including inorganic multilayers, planarization layers, reflective electrodes, pixel-defined layers, intermediate multilayers and semi-transparent electrodes is designed. By setting a buffer area and a light barrier structure, light is prevented from entering the light-transmitting area and passing through Specific structural designs avoid laser irradiation to damage pixels.

Benefits of technology

High transparency of the light-transmitting area is achieved, pixel damage caused by laser irradiation is avoided, and complete removal of the shared intermediate layer and upper electrode is ensured, improving the performance and reliability of the electroluminescent device.

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Abstract

An electroluminescent device is provided. In an exemplary embodiment, the electroluminescent device may include a lower structure and an encapsulation structure, and may include a light-transmitting region having a non-through hole structure. In an exemplary embodiment, the shape of the light-transmitting region may be various. In an exemplary embodiment, a glass substrate or a flexible substrate may be used. In an exemplary embodiment, a structure may be provided to prevent light emitted from a pixel or external light from being transmitted to the light-transmitting region.
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Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2018-0002480, filed on January 8, 2018, and Korean Patent Application No. 10-2018-0088581, filed on July 30, 2018, which are hereby incorporated by reference for all purposes as if fully set forth herein. Technical Field

[0002] Exemplary embodiments of the invention relate generally to an electroluminescent device, and more particularly, to an electroluminescent device having a light transmissive region. Background Art

[0003] Currently, since various portable types of electronic devices include a camera function, the case of carrying only one electronic device with a built-in camera function has rapidly increased compared to the case of carrying a camera separately.

[0004] In the conventional art, since the camera is disposed outside the image display area of ​​the electronic device, there is a tendency for the space in which the electronic device can display an image to be reduced.

[0005] In order to cope with this trend, U.S. Patent Application Publication No. 2016-0337570 and other applications disclose a structure in which a camera is located in a display area.

[0006] The above information is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art.

[0007] The above information disclosed in this Background section is only for understanding the background of the inventive concept and therefore it may contain information that does not constitute the prior art. Summary of the invention

[0008] When the electroluminescent device may have a light transmission area, a problem occurs that the internal light or external light emitted by the pixel enters the light transmission area. In addition, when the laser used to form the light transmission area is irradiated, a problem occurs that the pixels in the display area are damaged. In addition, when a light transmission area having a through hole structure is formed by stacking a common intermediate layer and a common upper electrode and then removing the portion of the common intermediate layer and the common upper electrode corresponding to the through hole by laser, the portion of the common intermediate layer and the common upper electrode must be completely removed. However, there is a problem that the portion of the common intermediate layer and the common upper electrode may not be completely removed.

[0009] Exemplary embodiments will address at least one of these issues.

[0010] An electroluminescent device according to an exemplary embodiment may include a lower structure and an encapsulation structure. The encapsulation structure may be disposed on the lower structure. The lower structure may include an inorganic multilayer, a planarization layer, a reflective electrode, a pixel defining layer, an intermediate multilayer, and a semi-transparent electrode. The planarization layer may be substantially transparent and may be disposed on the inorganic multilayer. The reflective electrode may be a dedicated layer disposed on the planarization layer. The pixel defining layer may be substantially transparent, may be disposed on the planarization layer, and may include a pixel defining portion and a first spacer. The pixel defining portion may cover a side portion of the reflective electrode. The first spacer may have a height much higher than the pixel defining portion. The reflective electrode may not be disposed under the first spacer. The intermediate multilayer may be disposed on the reflective electrode and may have at least one intermediate common layer. The semi-transparent electrode may be a common layer disposed on the intermediate multilayer. The lower structure may have a light transmission region and a display region surrounding at least a portion of the light transmission region. A portion of the planarization layer and the first spacer may be included in the light transmission region, the portion being disposed under the first spacer. An electroluminescent unit including a reflective electrode, an intermediate multilayer, and a semi-transparent electrode may be included in the display region. The first spacer may not be covered by at least one selected from the group of the intermediate common layer and the semi-transparent electrode. As an example, the first spacer may not be covered by the intermediate common layer, and the first spacer may not be covered by the semi-transparent electrode. As another example, the first spacer may not be covered by the intermediate common layer, and the first spacer may be covered by the semi-transparent electrode. As yet another example, the first spacer may be covered by the intermediate common layer, and the first spacer may not be covered by the semi-transparent electrode.

[0011] The pixel defining layer may further include a second spacer having substantially the same height as the first spacer and having a much smaller area than the first spacer. The intermediate multilayer may further include at least one intermediate exclusive layer. The intermediate exclusive layer may not cover the first spacer and the second spacer. The intermediate common layer and the semi-transparent electrode may cover the second spacer.

[0012] The lower structure may further include a substrate disposed under the inorganic multilayer. The inorganic multilayer may have at least one recess disposed under the first spacer and filled with the planarization layer or at least one hole disposed under the first spacer and filled with the planarization layer.

[0013] The lower structure may further include a passivation layer disposed on the semi-transparent electrode, the passivation layer being a semi-conductive or conductive common layer. The passivation layer may not cover the first spacer.

[0014] The lower structure may have a buffer region, the buffer region having at least a portion extending along the outline of the light transmission region between the display region and the light transmission region to separate the display region and the light transmission region from each other. The lower structure may have an inorganic surface portion substantially surrounding the display region and the light transmission region. The encapsulation structure may have an inorganic lower surface. The inorganic lower surface of the encapsulation structure may contact the inorganic surface portion of the lower structure to form an inorganic-inorganic encapsulation contact region substantially surrounding the display region and the light transmission region. For example, the inorganic-inorganic encapsulation contact region may completely surround the display region and the light transmission region.

[0015] Another electroluminescent device according to an exemplary embodiment may include a lower structure and an encapsulation structure. The encapsulation structure may be disposed on the lower structure. The lower structure may include a display area, a light transmission area, and a buffer area. The light transmission area may have a non-through hole structure including at least a portion surrounded by the display area. The buffer area may have at least a portion extending along the outline of the light transmission area between the display area and the light transmission area so that the display area and the light transmission area are separated from each other. The lower structure may also include a light blocking structure extending along the outline of the light transmission area in at least a portion of the buffer area.

[0016] The lower structure may also include an inorganic multilayer, a planarization layer, a reflective electrode, a pixel defining layer, an intermediate multilayer, and a semi-transparent electrode. The planarization layer may be substantially transparent and may be disposed on the inorganic multilayer. The reflective electrode may be a dedicated layer disposed on the planarization layer. The pixel defining layer may be substantially transparent and may be disposed on the planarization layer to cover the side of the reflective electrode. The intermediate multilayer may be disposed on the reflective electrode. The semi-transparent electrode may be a common layer disposed on the intermediate multilayer. The pixel defining layer may have a sidewall extending along the contour of the light transmission area in at least a portion of the buffer area. The light blocking structure may include a semi-transparent member that extends on the pixel defining layer to cover the sidewall of the pixel defining layer and is a single component with the semi-transparent electrode.

[0017] The lower structure may also include an inorganic multilayer, a planarization layer, a reflective electrode, a pixel defining layer, an intermediate multilayer, and a semi-transparent electrode. The planarization layer may be substantially transparent and may be disposed on the inorganic multilayer. The reflective electrode may be a separate layer disposed on the planarization layer. The pixel defining layer may be substantially transparent and may be disposed on the planarization layer to cover the side of the reflective electrode. The intermediate multilayer may be disposed on the reflective electrode. The semi-transparent electrode may be a common layer and may be disposed on the intermediate multilayer. The planarization layer and the pixel defining layer may have sidewalls extending along the contour of the light transmission area in at least a portion of the buffer area. The light blocking structure may have a semi-transparent member that extends on the planarization layer and the pixel defining layer to cover the sidewalls and is a single component with the semi-transparent electrode.

[0018] The light blocking structure may further include a reflective structure disposed on the inorganic multilayer. The sidewall may contact an upper surface of the reflective structure so that the translucent member may contact the upper surface of the reflective structure.

[0019] The intermediate multilayer may have at least one intermediate common layer. A side portion of the translucent member may be substantially closer to the light transmission region than a side portion of the intermediate common layer.

[0020] The lower structure may further include an inorganic multilayer and a planarization layer. The planarization layer may be substantially transparent and may be disposed on the inorganic multilayer. The light blocking structure may include a first reflective structure disposed on the planarization layer.

[0021] The lower structure may further include a reflective electrode, a pixel defining layer, an intermediate multilayer, and a semi-transparent electrode. The reflective electrode may be a dedicated layer disposed on the planarization layer. The pixel defining layer may be substantially transparent and may be disposed on the planarization layer to cover the side of the reflective electrode. The intermediate multilayer may be disposed on the reflective electrode. The semi-transparent electrode may be a common layer disposed on the intermediate multilayer. The first reflective structure may be disposed on substantially the same layer as the reflective electrode.

[0022] The planarization layer may have a first sidewall extending along an outline of the light transmission region in at least a portion of the buffer region.

[0023] The first reflective structure may extend on the planarization layer to cover the first sidewall.

[0024] The light blocking structure may further include a second reflective structure disposed on the inorganic multilayer. The first sidewall may contact an upper surface of the second reflective structure so that the first reflective structure may contact an upper surface of the second reflective structure.

[0025] The pixel defining layer may have a second sidewall extending along the outline of the light transmission area in at least a portion of the buffer area. The light blocking structure may further include a translucent member extending on the pixel defining layer to cover the second sidewall and being a single member with the translucent electrode. The second sidewall may contact the upper surface of the first reflective structure so that the translucent member may contact the upper surface of the first reflective structure.

[0026] The intermediate multiple layers may include at least one intermediate common layer.A side portion of the translucent member may be substantially closer to the light transmission region than a side portion of the intermediate common layer.

[0027] The first reflective structure may have at least one hole.

[0028] The lower structure may include an inorganic multilayer structure, a planarization layer, a reflective electrode, a pixel defining layer, an intermediate multilayer, and a semi-transparent electrode. The planarization layer may be substantially transparent and may be disposed on the inorganic multilayer structure. The reflective electrode may be a dedicated layer disposed on the planarization layer. The pixel defining layer may be substantially transparent and may be disposed on the planarization layer to cover the side of the reflective electrode. The intermediate multilayer may be disposed on the reflective electrode. The semi-transparent electrode may be a common layer disposed on the intermediate multilayer. The inorganic multilayer structure may include at least one recess corresponding to the light transmission region and filled with the planarization layer.

[0029] The light blocking structure may include a conductive material. The light blocking structure may not transmit an electrical signal.

[0030] Another electroluminescent device according to an exemplary embodiment may include a lower structure and an encapsulation structure. The lower structure may include a substrate and an inorganic multilayer. The substrate may include glass or an organic polymer. The inorganic multilayer may be disposed on the substrate. The encapsulation structure may be disposed on the lower structure. The lower structure may include a display area and a light transmission area. The display area may be defined within the outline of the inorganic multilayer in a plan view. The light transmission area may be defined within the outline of the inorganic multilayer in a plan view and may have a non-through hole structure having at least a portion surrounded by the display area. The upper portion of the inorganic multilayer may have at least one recess corresponding to the light transmission area. The display area may be substantially opaque.

[0031] The inorganic multilayer may include one of a layer including a nitride or an oxynitride and an oxide layer. The oxide layer may be partially removed at the upper portion of the inorganic multilayer by at least one recess, and the layer including the nitride or the oxynitride may not be partially removed at the upper portion of the inorganic multilayer by at least one recess.

[0032] The light transmissive region may include a plurality of substantially transparent display pixels.

[0033] Another electroluminescent device according to an exemplary embodiment may include a lower structure and an encapsulation structure. The lower structure may include a glass substrate and an inorganic multilayer disposed on the glass substrate. The encapsulation structure may be disposed on the lower structure. The lower structure may include: a display area, which is defined within the outline of the inorganic multilayer in a plan view; and a light transmission area, which is defined within the outline of the inorganic multilayer in a plan view and has a non-through hole structure, the non-through hole structure including at least a portion surrounded by the display area. The inorganic multilayer may include at least one hole corresponding to the light transmission area. The display area may be substantially opaque.

[0034] The light transmissive region may include a plurality of substantially transparent display pixels.

[0035] According to an exemplary embodiment, a light blocking structure capable of preventing light from entering a light transmission region having a non-through hole structure may be provided. By forming the light transmission region to have a non-through hole structure, damage caused by irradiation of a laser that may be used to form the light transmission region having a through hole structure may not be generated. In addition, the light transmission region may have a portion patterned to resemble a substantially "Ω" shape.

[0036] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The accompanying drawings illustrate exemplary embodiments of the invention and together with the description serve to explain the inventive concept, wherein the accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification.

[0038] Figure 1 is a plan view showing an electroluminescent device according to an exemplary embodiment.

[0039] Figure 2 is along Figure 1 A cross-sectional view taken along line II-II'.

[0040] Figure 3 and Figure 4 is a plan view illustrating an opening mask used in an evaporation deposition process according to an exemplary embodiment.

[0041] Figures 5 to 9 It is shown that the Figure 4 Magnified view of the hole in area B.

[0042] Fig.10 and Fig.11 is a plan view showing an electroluminescent device according to an exemplary embodiment.

[0043] Fig.12 is a plan view illustrating a separate mask used for an evaporation deposition process according to an exemplary embodiment.

[0044] Fig.13 and Fig.14 It is shown Figure 2 An enlarged view of portion Y in FIG.

[0045] Fig.15 is a cross-sectional view illustrating an electroluminescent device according to an exemplary embodiment.

[0046] Fig.16 and Fig.17 is a plan view showing a panel according to an exemplary embodiment.

[0047] Fig.18 is along Fig.17 A cross-sectional view taken along line XVIII-XVIII'.

[0048] Figures 19 to 21 is a plan view illustrating an opening mask used in an evaporation deposition process according to an exemplary embodiment.

[0049] Fig. 22 and Fig.23 is a diagram showing a method of using a Fig.19 , Fig. 20 or Fig.21 A plan view of an electroluminescent device formed by using an opening mask shown in FIG.

[0050] Fig.24 is a plan view illustrating an opening mask used in an evaporation deposition process according to an exemplary embodiment.

[0051] Fig.25 is a cross-sectional view illustrating an electroluminescent device according to an exemplary embodiment. DETAILED DESCRIPTION

[0052] In the following description, for the purpose of explanation, many specific details are set forth to provide a thorough understanding of various exemplary embodiments or implementations of the invention. As used herein, "embodiment" and "implementation" are interchangeable words, and "embodiment" and "implementation" are non-limiting examples of devices or methods using one or more inventive concepts disclosed herein. However, it is obvious that various exemplary embodiments can be practiced without these specific details or with one or more equivalent arrangements. In other cases, in order to avoid making various exemplary embodiments unclear unnecessarily, known structures and devices are shown in block diagram form. In addition, various exemplary embodiments may be different, but do not have to be exclusive. For example, without departing from the inventive concept, the specific shape, construction and characteristics of the exemplary embodiment may be used or implemented in another exemplary embodiment.

[0053] Unless otherwise specified, the exemplary embodiments shown will be understood as providing exemplary features of different details of some ways in which the inventive concept can be implemented in practice. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions and / or aspects, etc. (hereinafter individually or collectively referred to as "elements") of the various embodiments may be additionally combined, separated, interchanged and / or rearranged without departing from the inventive concept.

[0054] Cross hatching and / or shading are often used in the drawings to illustrate the boundaries between adjacent elements. Thus, unless otherwise specified, the presence or absence of cross hatching or shading does not convey or indicate any preference or requirement for the specific material, material properties, size, ratio, commonality between the elements shown, and / or any other characteristics, attributes, properties, etc. of the elements. In addition, in the drawings, the size and relative size of the elements may be exaggerated for the purpose of clarity and / or description. When the exemplary embodiments may be implemented differently, the specific process sequence may be performed in a different order than described. For example, two processes described in succession may be performed substantially simultaneously or in an order opposite to the described order. In addition, the same reference numerals represent the same elements.

[0055] When an element or layer is referred to as being "on" another element or layer, "connected to" or "bonded to" another element or layer, the element or layer may be directly on, directly connected to or directly bonded to the other element or layer, or there may be an intermediate element or layer. However, when an element or layer is referred to as being "directly on" another element or layer, "directly connected to" or "directly bonded to" another element or layer, there is no intermediate element or layer. For this reason, the term "connection" may refer to a physical connection, an electrical connection and / or a fluid connection with or without an intermediate element. In addition, the D1 axis, the D2 axis and the D3 axis are not limited to the three axes of a rectangular coordinate system (such as an x-axis, a y-axis and a z-axis), and may be interpreted in a broader sense. For example, the D1 axis, the D2 axis and the D3 axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purpose of this disclosure, "at least one of X, Y, and Z" and "at least one selected from the group of X, Y, and Z" may be interpreted as any combination of only X, only Y, only Z, or two or more of X, Y, and Z, such as XYZ, XYY, YZ, and ZZ. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0056] Although the terms "first", "second", etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Therefore, without departing from the disclosed teachings, the first element discussed below may be named as the second element.

[0057] For descriptive purposes, spatially relative terms such as "under," "below," "below," "down," "above," "up," "above," "higher," and "side" (e.g., as in "sidewall") may be used herein to describe the relationship of one element to another (other) element as shown in the figures. In addition to the orientations depicted in the figures, the spatially relative terms are intended to include different orientations of the device in use, operation, and / or manufacture. For example, if the device in the figure is turned over, an element described as "under" or "below" other elements or features will subsequently be positioned as "above" the other elements or features. Thus, the exemplary term "under" can include both above and below orientations. In addition, the device can be positioned otherwise (e.g., rotated 90 degrees or in other orientations), and as such, the spatially relative descriptors used herein are interpreted accordingly.

[0058] The terms used herein are for the purpose of describing specific embodiments, and are not intended to be limiting. As used herein, unless the context clearly indicates otherwise, the singular forms "one", "a kind of (person)" and "the (said)" are also intended to include plural forms. In addition, when the terms "include", "comprise" and various variations thereof are used in this specification, it is explained that there are stated features, integral bodies, steps, operations, elements, components and / or their groups, but it is not excluded that there are or add one or more other features, integral bodies, steps, operations, elements, components and / or their groups. It is also worth noting that, as used herein, the terms "substantially", "approximately" and other similar terms are used as approximate terms rather than as degree terms, and so, are used to explain the inherent deviations of the measured values, calculated values ​​and / or provided values ​​that will be recognized by those of ordinary skill in the art.

[0059] Various exemplary embodiments are described herein with reference to cross-sectional views and / or exploded views as schematic diagrams of idealized exemplary embodiments and / or intermediate structures. As such, variations in the shapes of the illustrations, such as those caused by manufacturing techniques and / or tolerances, are expected to occur. Therefore, the exemplary embodiments disclosed herein should not necessarily be interpreted as being limited to the specific illustrated shapes of the regions, but will include deviations in shapes caused by, for example, manufacturing. In this manner, the regions shown in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and as such, are not necessarily intended to be limiting.

[0060] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this disclosure is a part. Unless explicitly defined as such herein, terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense.

[0061] Will refer to Figure 1 An electroluminescent device according to an exemplary embodiment will be described.

[0062] Figure 1 is a plan view showing an electroluminescent device according to an exemplary embodiment.

[0063] The electroluminescent device according to an exemplary embodiment may include an outer buffer region 201 , a display region 100 , a light transmission region 210 , and an inorganic-inorganic package contact region 251 .

[0064] The display area 100 may include a plurality of pixels that display an image.

[0065] The light transmission area 210 may have a much higher light transmittance than at least one selected from the group of the display area 100 and the outer buffer area 201. Figure 2 ) and at least one selected from the group of light emitted from the optical unit 10 may pass through the light transmission area 210. Examples of the optical unit 10 may include a camera, a flash, a sensor, and the like.

[0066] In an exemplary embodiment, the light transmission area 210 may have a non-through hole structure. Fig.13 The pixel circuit zone PCZ in is much larger, so the light-transmitting area 210 can be basically different from the light-transmitting zone in the pixel for realizing transparent display.

[0067] The outer buffer region (hereinafter, also referred to as a buffer region) 201 may completely surround the display region 100 and the light transmission region 210 in a plan view.

[0068] The inorganic-inorganic package contact region 251 may completely surround the outer buffer region 201 in a plan view.

[0069] A portion of the external buffer region 201 may extend between the display region 100 and the light-transmitting region 210 (eg, along a contour of the light-transmitting region 210 ) such that the display region 100 and the light-transmitting region 210 may be separated from each other by the portion of the external buffer region 201 .

[0070] The display area 100 may partially surround the light transmission area 210 in a plan view.

[0071] Next, describe the Figure 1 A cross-sectional view taken along line II-II'.

[0072] Figure 2 is along Figure 1 A cross-sectional view taken along line II-II'.

[0073] Reference Figure 2 , the light transmission area 210 may include a lower glass substrate 140, a planarization layer 19, a lower extension portion 19a of the planarization layer 19, a pixel definition layer 21, a first spacer 21a extending upward from the pixel definition layer 21, and an upper glass substrate 150. The lower extension portion 19a of the planarization layer 19 may extend downward from the planarization layer 19. The light transmission area 210 may have substantially no portion that blocks light, and therefore, the light transmission area 210 may have a relatively high transparency. The space between the upper glass substrate 150 and the first spacer 21a may be empty. Alternatively, the space between the upper glass substrate 150 and the first spacer 21a may be filled with a filling structure having substantially excellent light transmittance.

[0074] The touch sensor structure 160 may be disposed on the upper glass substrate 150. The polarization layer 39 may be disposed on the touch sensor structure 160. A portion of the touch sensor structure 160 (a portion corresponding to the light transmission area 210) may be removed. A portion of the polarization layer 39 (a portion corresponding to the light transmission area 210) may be removed. A transparent layer may be formed on the upper glass substrate 150 to correspond to the light transmission area 210.

[0075] The planarization layer 19 may have a lower extension portion 19a corresponding to the light transmission region 210. A portion of the initial inorganic multilayer (the portion corresponding to the light transmission region 210) may be etched to form at least one hole, and then the hole may be filled with the planarization layer 19 to form the lower extension portion 19a of the planarization layer 19. By etching a portion of the initial inorganic multilayer (the portion corresponding to the light transmission region 210), the initial inorganic multilayer may become the inorganic multilayer 26b. Figure 2 , the inorganic multilayer 26b may include a first inorganic layer 13, a second inorganic layer 15, and a third inorganic layer 17. The inorganic multilayer 26b and the lower glass substrate 140 may be collectively referred to as an inorganic multilayer structure 26a.

[0076] The pixel defining layer 21 may include a first spacer 21a. The first spacer 21a may correspond to the light transmission region 210. At least one selected from the group of the intermediate multilayer 22, the common upper electrode 23, and the common organic passivation layer 24 may not be formed on the first spacer 21a. The intermediate multilayer 22 may have at least one intermediate common layer. The intermediate multilayer 22 may also include at least one intermediate exclusive layer. For example, the intermediate multilayer 22 may include a common hole transport layer (hereinafter, referred to as HTL) 22a, an exclusive emission layer 22b, and a common electron transport layer (hereinafter, referred to as ETL) 22c. In an exemplary embodiment, the intermediate common layer may include a common HTL 22a, a common ETL 22c, etc., and the intermediate exclusive layer may include an exclusive emission layer 22b. According to an exemplary embodiment, a layer having high transparency among the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24 may be disposed on the first spacer 21a. Hereinafter, at least one selected from the group of the common HTL 22 a , the common ETL 22 c , the common upper electrode 23 , and the common organic passivation layer 24 may be referred to as a common layer.

[0077] The display area 100 may include a plurality of pixels, one pixel may include a pixel circuit and a light emitting unit that emits light by using a current received from the pixel circuit. The light emitting units may be distinguished from each other by a pixel defining layer 21, and the pixel defining layer 21 in the display area 100 may include a second spacer 21b extending upward.

[0078] The inorganic glass frit 250 and the upper glass substrate 150 may serve as an upper encapsulation structure to prevent external moisture from flowing into the organic emission layer. The contact area between the inorganic glass frit 250 and the third inorganic layer 17 may correspond to an inorganic-inorganic encapsulation contact area 251 surrounding the display area 100 and the light transmission area 210. Figure 2 In the embodiment, the upper surface of the third inorganic layer 17 may have an area P in contact with the inorganic glass frit 250. The area P may correspond to an inorganic surface portion P of the inorganic multilayer structure 26a including the lower glass substrate 140 and the inorganic multilayer 26b. The inorganic multilayer structure 26a may include at least one lower inorganic encapsulation layer, which extends horizontally below the entire upper surface of the inorganic multilayer structure 26a to vertically correspond to the entire upper surface of the inorganic multilayer structure 26a. The lower glass substrate 140 may correspond to the lower inorganic encapsulation layer. Although in Figure 2 In the illustrated exemplary embodiment, three inorganic layers are provided between the inorganic surface portion P and the lower inorganic encapsulation layer, but the present invention is not limited thereto, for example, only at least one inorganic layer may be provided between the inorganic surface portion P and the lower inorganic encapsulation layer.

[0079] In an exemplary embodiment, the display area 100 may be substantially opaque. Because the light-transmitting area 210 may be Fig.13 The pixel circuit zone PCZ occupied by the pixel circuit driving each pixel shown in is much larger, so the light transmission area 210 can be substantially different from the light transmission zone formed in each pixel circuit zone PCZ for realizing transparent display. As an example, the pixel circuit zone PCZ can have a substantially rectangular shape with approximate dimensions of a width of about 25 microns and a length of about 50 microns. As another example, the light transmission area 210 can have a substantially circular shape with a diameter of about 3 mm. The first spacer 21a can have an area larger than the pixel circuit zone PCZ. Alternatively, the second spacer 21b can have an area smaller than the pixel circuit zone PCZ.

[0080] In an exemplary embodiment, the light transmission region 210 may have a much larger area than a color unit including pixels of different colors to obtain white light. For example, a color unit may include a red pixel, a green pixel, and a blue pixel. Figure 1 In the light-transmitting area 210 of a substantially “Ω” shape shown in , the area of ​​the light-transmitting area 210 may mean the area of ​​a portion of the light-transmitting area 210 that is substantially surrounded by the display area 100. The display area 100 may be substantially opaque, which may mean that the display area 100 may have a light transmittance that is substantially insufficient to be used as a transparent display, but may not mean that the display area 100 may have a light transmittance of approximately 0%. The opaque display area 100 may include: an opaque sub-display area having a first area; and a transparent sub-display area having a second area that may be much smaller than the first area and may be fully or partially surrounded by the opaque sub-display area. In addition to the opaque display area 100, a plurality of transparent display pixels may be formed in the light-transmitting area 210.

[0081] The meaning of the through hole structure may include a case where a hole may be formed through both the lower substrate and the lower structure. The meaning of the non-through hole structure may include a case where a hole may not be formed through at least one selected from the group of the lower substrate and the lower structure.

[0082] At least one selected from the group of the common HTL 22 a , the common ETL 22 c , the common upper electrode 23 , and the common organic passivation layer 24 may be disposed on the second spacer 21 b , and may not be disposed on the first spacer 21 a .

[0083] The lower electrode 20, which may be a separate layer, may not overlap the light transmission region 210. The lower electrode 20 may include a low light transmission material or a reflective material, and thus, the lower electrode 20 may function as a reflective electrode.

[0084] The touch electrode structure 60 of the touch sensor structure 160 may not overlap the light transmission area 210. The touch electrode structure 60 may include a low light transmission material.

[0085] The polarizing layer 39 may not overlap with the light transmission area 210. The polarizing layer 39 may have a low light transmittance characteristic. Instead of the polarizing layer 39, a color filter having a red filter area, a green filter area, and / or a blue filter area and a light blocking member may be used. An example of a light blocking member may include a black matrix. When a color filter may be used, the red filter area, the green filter area, and / or the blue filter area and the black matrix may not overlap with the light transmission area 210.

[0086] exist Figure 2 In the embodiment of the present invention, the touch insulating structure 65 of the touch sensor structure 160 may overlap the light transmitting area 210. The touch insulating structure 65 may be partially removed so as not to overlap the light transmitting area 210.

[0087] exist Figure 2 In the embodiment, the upper glass substrate 150 and the first spacer 21a may be arranged to be separated from each other. As an option, the upper glass substrate 150 and the first spacer 21a may contact each other. As another option, a filling structure having substantially excellent light transmittance may be placed between the upper glass substrate 150 and the first spacer 21a.

[0088] exist Figure 2 In the embodiment of the present invention, the common organic passivation layer 24 may not cover the first spacer 21a, so that the light transmittance can be increased. The common organic passivation layer 24 may be in contact with the common upper electrode 23. The common organic passivation layer 24 may include a semiconductive or conductive organic material having a refractive index exceeding about 1.8. The common organic passivation layer 24 may be used to increase light extraction and may be used to physically protect the common upper electrode 23. The common organic passivation layer 24 may not be formed by a plasma enhanced chemical vapor deposition (hereinafter referred to as PE-CVD) method, but may be formed by an evaporation deposition process so as not to damage the common upper electrode 23.

[0089] According to an exemplary embodiment, the common organic passivation layer 24 may be formed to cover the first spacer 21 a. In this case, the common organic passivation layer 24 may physically protect the common upper electrode 23 more effectively.

[0090] When the common organic passivation layer 24 may be formed so as not to cover the first spacer 21a, Figure 3 and Figure 4 The mask in can be used to form the common organic passivation layer 24. When the common organic passivation layer 24 can be formed to cover the first spacer 21a, there is no Figure 3The open mask of the middle portion A may be used to form the common organic passivation layer 24 .

[0091] exist Figure 2 In the embodiment, the first inorganic layer 13 , the second inorganic layer 15 , and the third inorganic layer 17 that may be included in the inorganic multilayer 26 b may all be etched so that the inorganic multilayer structure 26 a may have at least one recess R.

[0092] As an option, only the second inorganic layer 15 and the third inorganic layer 17 may be etched so that the inorganic multilayer structure 26a may have a recess R. As another option, only the third inorganic layer 17 may be etched so that the inorganic multilayer structure 26a may have a recess R. As yet another option, the first inorganic layer 13, the second inorganic layer 15, and the third inorganic layer 17 may not be etched. However, if only the second inorganic layer 15 and the third inorganic layer 17 may be etched, only the third inorganic layer 17 may be etched, or the first inorganic layer 13, the second inorganic layer 15, and the third inorganic layer 17 may not be etched, then in view of the improvement in light transmittance, it may be advantageous that the structure that reduces the light transmittance of the light transmission region 210 may not be directly disposed on the portion of the inorganic multilayer 26b corresponding to the light transmission region 210, or may not be disposed inside the portion of the inorganic multilayer 26b corresponding to the light transmission region 210. Examples of a structure that reduces light transmittance of the light transmitting area 210 may include a reflective wiring under the first spacer 21a, a thin film transistor (hereinafter, referred to as TFT) under the first spacer 21a, a capacitor under the first spacer 21a, and the like.

[0093] The pixel defining portion of the pixel defining layer 21 covering the side of the lower electrode 20 may have a height h1, and the first and second spacers 21a and 21b may have a height h2 which may be much higher than the height h1. Here, having the height h1 may mean that the uppermost surface may be formed at the height h1.

[0094] At least one selected from the group of the pixel defining layer 21 and the planarization layer 19 may include an organic material having a yellow index less than about 95 at a thickness of 0.025 mm and a light transmittance of about 70% or more relative to a wavelength of about 550 nm. For example, it may be preferred that the organic material may have a yellow index less than about 20 at a thickness of about 0.025 mm and a light transmittance of about 80% or more relative to a wavelength of about 550 nm.

[0095] According to an exemplary embodiment, the pixel defining layer 21 may include colored polyimide (hereinafter, referred to as PI) or transparent PI, and the planarization layer 19 may include acrylic resin. The colored PI may include PI having a yellowish characteristic.

[0096] According to an exemplary embodiment, the pixel defining layer 21 and the planarization layer 19 may include colored PI or transparent PI.

[0097] According to an exemplary embodiment, both the pixel defining layer 21 and the planarization layer 19 may include acrylic resin.

[0098] According to an exemplary embodiment, at least one selected from the group of the pixel defining layer 21 and the planarization layer 19 may include at least one selected from the group of a siloxane organic material and a silazane organic material.

[0099] According to an exemplary embodiment, the Figure 2 The portion X ranging from the upper surface of the first spacer 21a to the lower surface of the lower extension portion 19a of the planarization layer 19 may then be filled with a filling structure having substantially excellent light transmittance by removing Figure 2 The space formed by the portion X in the spacer 21a. An example of the filling structure may include resin. The filling structure including the resin may have substantially the same height as the first spacer 21a, so that the filling structure including the resin may perform the spacer function of the first spacer 21a.

[0100] When the inorganic multilayer 26b exists in the light transmitting region 210, a recess formed at a lower portion of the lower glass substrate 140 or a hole passing through the lower glass substrate 140 may be formed. The optical unit 10 may be inserted into the recess or the hole.

[0101] When the hole may be formed through the lower glass substrate 140 and the inorganic multilayer 26b may not exist in the light transmission area 210, the penetration of moisture may not be prevented. Therefore, if the inorganic multilayer 26b does not exist in the light transmission area 210, only a recess (i.e., not a hole) may be formed at the lower portion of the lower glass substrate 140 so that the optical unit 10 can be inserted into the recess.

[0102] The first inorganic layer 13 and the third inorganic layer 17 may include silicon nitride and / or silicon oxynitride (eg, SiON). Examples of silicon nitride may include SiN x The second inorganic layer 15 may include silicon oxide. Examples of silicon oxide may include SiO 2 .

[0103] Will refer to Figure 3 and Figure 4 An opening mask according to an exemplary embodiment will be described.

[0104] First, we will describe Figure 3 The opening mask in .

[0105] Figure 3is a plan view showing an opening mask for an evaporation deposition process according to an exemplary embodiment, the evaporation deposition process being used to form a Figure 2 At least one selected from the group of a common HTL 22 a, a common ETL 22 c, a common upper electrode 23 and a common organic passivation layer 24 .

[0106] Figure 3 The area A of the opening mask in the evaporation deposition process can be Figure 2 The first spacer 21a shown in is adjacent to form at least one selected from the group of a common HTL 22a, a common ETL 22c, a common upper electrode 23 and a common organic passivation layer 24, so that at least one selected from the group of a common HTL 22a, a common ETL 22c, a common upper electrode 23 and a common organic passivation layer 24 may not be formed on the first spacer 21a.

[0107] Therefore, it is possible to prevent light transmittance degradation of the light transmitting region 210 generated by at least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24 formed on the first spacer 21a.

[0108] Will describe Figure 4 The opening mask in .

[0109] Figure 4 is a plan view showing an opening mask used in an evaporation deposition process according to an exemplary embodiment, the evaporation deposition process being used to form a Figure 2 At least one selected from the group of a common HTL 22 a, a common ETL 22 c, a common upper electrode 23 and a common organic passivation layer 24 .

[0110] Figure 4 The region A of the opening mask shown in FIG. 1 can be used in the evaporation deposition process with Figure 2 The first spacer 21a shown in is adjacent to form at least one selected from the group of a common HTL 22a, a common ETL 22c, a common upper electrode 23 and a common organic passivation layer 24, so that at least one selected from the group of a common HTL 22a, a common ETL 22c, a common upper electrode 23 and a common organic passivation layer 24 may not be formed on the first spacer 21a.

[0111] Therefore, it is possible to prevent light transmittance degradation of the light transmitting region 210 generated by at least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24 formed on the first spacer 21a.

[0112] The common layer may not be formed on the second spacer 21b overlapping the region B. The common layer may be formed on the second spacer 21b overlapping the hole H. The common layer may be formed on the second spacer 21b overlapping the region C. The second spacer 21b overlapping the region B may not be formed. The second spacer 21b overlapping the hole H may not be formed. The second spacer 21b overlapping the region B and the second spacer 21b overlapping the hole H may not be formed.

[0113] The region B having the plurality of holes H may extend to occupy the entire region C.

[0114] When the region A may be substantially circular, the auxiliary hole H1 may also be formed near the region A so that the region A may effectively have a substantially circular shape.

[0115] Will refer to Figures 5 to 9 The shape of the hole H according to the exemplary embodiment will be described.

[0116] Figures 5 to 9 It is shown that the Figure 4 An enlarged view of the shape of hole H in area B in FIG.

[0117] In a similar Figure 4 The hole H used in the opening mask may have a shape such as Figures 5 to 9 Various shapes shown in .

[0118] Figure 5 An exemplary embodiment is shown in which the shape of each hole H may be substantially hexagonal and may have an overall honeycomb shape.

[0119] exist Figure 6 In the embodiment, the shape of each hole H can be substantially square. Figure 7 In the embodiment, the shape of each hole H may be substantially rectangular. Figure 6 In the embodiment, the substantially square-shaped holes H can be arranged in rows and columns. Figure 7 In the embodiment, the substantially rectangular-shaped holes H may be arranged in rows and may be arranged to be staggered in columns. For example, the substantially rectangular-shaped holes H may be arranged to be offset in the column direction and may be arranged not to be offset in the row direction.

[0120] exist Figure 8 In the exemplary embodiment shown in FIG. , each hole H may be in a triangular shape, while Fig. 9 In the exemplary embodiment shown in , the shape of each hole H may be substantially circular, and an auxiliary hole H2 may also be formed.

[0121] like Figures 5 to 8As shown in the exemplary embodiment shown in , the holes H may have various shapes, such as hexagonal, quadrilateral, triangular, etc., so that the intervals between the holes H are substantially constant.

[0122] When the shape of the hole H can be Fig. 9 When a substantially circular shape is similar to the substantially circular shape in the figure, a substantially non-circular auxiliary hole H2 having a shape such as a triangle may also be formed in the space between the substantially circular shapes.

[0123] The hole H may be formed to vertically correspond to the light emitting zone of each pixel.

[0124] The size of the hole H may be sufficient to make at least one selected from the group of the common HTL 22a, the common ETL 22c, and the common upper electrode 23 become a common layer by utilizing a shadow effect. The shadow effect may mean a phenomenon generated during evaporation deposition of an organic material through a shadow mask having holes. When the shadow effect may be generated, a deposition area of ​​the organic material deposited through the hole may be substantially larger than the area of ​​the hole, and a contour of the hole may be set inside a contour of the deposition area.

[0125] When determining the size of the hole H for forming at least one selected from the group of the common HTL 22a and the common ETL 22c, the hole H may have a size substantially smaller than a predetermined size that allows at least one selected from the group of the common HTL 22a and the common ETL 22c to become a common layer. Even when at least one of the common HTL 22a and the common ETL 22c may become a local common layer or a dedicated layer, the electroluminescent device may operate normally. However, when determining the size of the hole H for forming the common upper electrode 23, the hole H may have a size not less than a predetermined size that allows the common upper electrode 23 to become a common layer. When the common upper electrode 23 may become a local common layer or a dedicated layer, the electroluminescent device does not operate normally.

[0126] Will refer to Fig.10 and Fig.11 An electroluminescent device according to an exemplary embodiment will be described.

[0127] Fig.10 and Fig.11 are plan views illustrating electroluminescent devices each having a display region, a first spacer, a third spacer, a fourth spacer, and an inorganic-inorganic package contact region according to an exemplary embodiment.

[0128] Reference Fig.10, the third spacer 21c may be connected between the first spacer 21a and the fourth spacer 21d. The first spacer 21a may be formed to correspond to the light transmission area 210. The fourth spacer 21d may be disposed inside the inorganic-inorganic package contact area 251 and may be formed along the outline of the display area 100. The fourth spacer 21d may surround the display area 100 in a plan view. The fourth spacer 21d may be surrounded by the inorganic-inorganic package contact area 251 in a plan view. The third spacer 21c may extend from the fourth spacer 21d toward the light transmission area 210 and may be connected to the first spacer 21a.

[0129] The third spacer 21c and the fourth spacer 21d may have substantially the same height as the first spacer 21a. The first spacer 21a, the third spacer 21c, and the fourth spacer 21d may be integrally formed as a single member.

[0130] When compared Fig.10 and Figure 3 hour, Figure 3 The region A in may correspond to the first spacer 21a, such that Figure 3 Region A in the diagram may be in contact with the first spacer 21a or may be adjacent to the first spacer 21a, region P may correspond to the fourth spacer 21d, so that region P may be in contact with the fourth spacer 21d or may be adjacent to the fourth spacer 21d, and the region set between region A and region P may correspond to the third spacer 21c, so that the region set between region A and region P may be in contact with the third spacer 21c or may be adjacent to the third spacer 21c.

[0131] Reference Fig.11 , the first spacer 21a and the third spacer 21c may be connected. The inorganic-inorganic package contact region 251 may surround the display region 100 in a plan view while passing between the third spacer 21c and the fourth spacer 21d. The third spacer 21c and the fourth spacer 21d may have substantially the same height as the first spacer 21a. The first spacer 21a and the third spacer 21c may be integrally formed as a single component. The fourth spacer 21d may have a shape such that the fourth spacer 21d may surround the inorganic-inorganic package contact region 251 in a plan view.

[0132] When compared Fig.11 and Figure 3 hour, Figure 3 The region A in may correspond to the first spacer 21a, such that Figure 3Region A in the diagram may be in contact with the first spacer 21a or may be adjacent to the first spacer 21a, region P may correspond to the fourth spacer 21d, so that region P may be in contact with the fourth spacer 21d or may be adjacent to the fourth spacer 21d, and the region set between region A and region P may correspond to the third spacer 21c, so that the region set between region A and region P may be in contact with the third spacer 21c or may be adjacent to the third spacer 21c.

[0133] Will refer to Fig.12 A separate mask according to an exemplary embodiment will be described.

[0134] Fig.12 is a plan view showing a single mask used in an evaporation deposition process for forming a Figure 2 A dedicated emission layer in .

[0135] Reference Fig.12 , the region A of the separate mask may be used with the evaporation deposition process for forming the dedicated emission layer 22b. Figure 2 The first spacer 21a is adjacent to the first spacer 21a, so that the dedicated emission layer 22b may not be formed on the first spacer 21a.

[0136] Therefore, it is possible to prevent the light transmittance of the light transmission area 210 from being degraded, which is caused by the exclusive emission layer 22b formed on the first spacer 21a. When the exclusive emission layer 22b may have a color and may include a transition metal, the exclusive emission layer 22b may extremely degrade the light transmittance. Therefore, it may be preferred that the exclusive emission layer 22b having a color and including a transition metal may not be formed in the light transmission area 210.

[0137] During the evaporation deposition process for forming the dedicated emission layer 22b, the region B of the separate mask may be set to be aligned with Figure 2 Therefore, the dedicated emission layer 22b may not be formed on the second spacer 21b.

[0138] Will refer to Fig.13 A method for solving the light interference problem caused by light traveling from the exclusive emission layer 22b to the optical unit will be described.

[0139] Fig.13 is a diagram showing a method according to an exemplary embodiment Figure 2 An enlarged view of portion Y in FIG.

[0140] exist Fig.13, the pixel circuit zone PCZ may include a TFT. The TFT may include a semiconductor layer 12, a gate electrode 14, a source electrode 18s, and a drain electrode 18d. The semiconductor layer 12 may be disposed on the first inorganic layer 13. The semiconductor layer 12 may include a channel region 12c, a source region 12s, and a drain region 12d. The source region 12s and the drain region 12d may be disposed on opposite sides of the channel region 12c. The semiconductor layer 12 may be covered by a second inorganic layer 15. The gate electrode 14 may be disposed on the second inorganic layer 15 so that the gate electrode 14 may vertically correspond to the channel region 12c of the semiconductor layer 12. The gate electrode 14 may be covered by a third inorganic layer 17. The third inorganic layer 17 and the second inorganic layer 15 may have an opening overlapping the source region 12s and the drain region 12d of the semiconductor layer 12. The source region 12s and the drain region 12d may be electrically connected to the source electrode 18s and the drain electrode 18d, respectively, through the opening. One pixel may include a plurality of TFTs, and one of the TFTs may be electrically connected to the lower electrode 20. The lower electrode 20 may be connected to the drain electrode 18d of the TFT. An organic emission layer may be disposed on the lower electrode 20. The organic emission layer may include a common HTL 22a, a dedicated emission layer 22b, and a common ETL 22c. A common upper electrode 23 may be disposed on the organic emission layer. The dedicated emission layer 22b in the organic emission layer may emit light for displaying an image by a current flowing between the lower electrode 20 and the common upper electrode 23.

[0141] The first reflective structure 18r may be formed by substantially the same process as the source electrode 18s and the drain electrode 18d. The first reflective structure 18r may be formed on substantially the same layer as the source electrode 18s and the drain electrode 18d. The source electrode 18s and the drain electrode 18d may have a three-layer structure including a reflective material. The three-layer structure may include a titanium (Ti) layer, an aluminum (Al) layer on the Ti layer, and a Ti layer on the Al layer.

[0142] The second reflective structure 20r may be formed by substantially the same process as the lower electrode 20. The second reflective structure 20r may be formed on substantially the same layer as the lower electrode 20. The lower electrode 20 may have a three-layer structure including a reflective material. The three-layer structure may include an indium tin oxide (ITO) layer, a silver (Ag) layer on the ITO layer, and an ITO layer on the Ag layer.

[0143] The first reflective structure 18r and the second reflective structure 20r may contact each other. The first reflective structure 18r and the second reflective structure 20r may form a light blocking structure 170. External light from the outside and internal light from the exclusive emission layer 22b may enter the optical unit 10 through the planarization layer 19. The light blocking structure 170 may block external light and internal light.

[0144] The second reflective structure 20r may have a plurality of holes. When the planarization layer 19 may be formed by using an organic material, the holes may become a path for exhaust.

[0145] According to an exemplary embodiment, the first reflective structure 18r may be omitted. In this case, the second reflective structure 20r may be connected to the inorganic multilayer 26b.

[0146] The common upper electrode 23 may include magnesium (Mg) and silver (Ag). The common upper electrode 23 may have a sufficiently thin thickness so that the common upper electrode 23 may have a translucent property or a transflective property. Because the common upper electrode 23 may have a translucent property or a transflective property, the common upper electrode 23 may have a much smaller light blocking effect than a single reflective electrode. However, because the light blocking effect may be much smaller than that of the reflective electrode, at least one first groove 24a may be formed in the pixel defining layer 21 above the planarization layer 19, or at least one second groove 24b may be formed on the second reflective structure 20r, thereby more effectively preventing light from passing through the pixel defining layer 21 and flowing into the optical unit. In other words, the pixel defining layer 21 may have a sidewall extending along the contour of the light transmission area 210 in at least a portion of the buffer area.

[0147] The common upper electrode 23 may extend on the pixel defining layer 21 to cover the sidewall of the pixel defining layer 21 extending along the outline of the light transmission area 210 in at least a portion of the buffer area. Specifically, the common upper electrode 23 may be formed on the left side wall, bottom, and right side wall of the first groove 24a. Light passing through the first groove 24a from the left side of the first groove 24a to the right side of the first groove 24a may be reduced twice by a portion of the common upper electrode 23 on the left side wall of the first groove 24a and a portion of the common upper electrode 23 on the right side wall of the first groove 24a. Therefore, even if the common upper electrode 23 may have a semi-transparent characteristic or a transflective characteristic, light passing through the first groove 24a from the left side of the first groove 24a to the right side of the first groove 24a may be effectively blocked. Similarly, the common upper electrode 23 may be formed on the left side wall, bottom, and right side wall of the second groove 24b. The light passing through the second groove 24b from the left side of the second groove 24b to the right side of the second groove 24b can be reduced twice by a portion of the common upper electrode 23 on the left side wall of the second groove 24b and a portion of the common upper electrode 23 on the right side wall of the second groove 24b. Therefore, even if the common upper electrode 23 may have a semi-transparent property or a transflective property, the light passing through the second groove 24b from the left side of the second groove 24b to the right side of the second groove 24b can also be effectively blocked. In addition, when the pixel defining layer 21 may have a first groove 24a and a second groove 24b, the light can be more effectively blocked. In this case, the portion of the common upper electrode 23 extending along the first groove 24a and the second groove 24b can also serve as a part of the light blocking structure 170.

[0148] The first reflective structure 18r, the second reflective structure 20r, the first groove 24a and the second groove 24b can be formed to extend along the periphery of the light-transmitting area 210 between the display area 100 and the light-transmitting area 210 in a plan view (i.e., can extend along the contour of the light-transmitting area 210 in at least a portion of the buffer area) to prevent light from being transmitted to the light-transmitting area 210.

[0149] The common upper electrode 23 may be in contact with the second reflective structure 20r, so that the second reflective structure 20r may perform a function of an auxiliary wiring supplying power to the common upper electrode 23. Alternatively, the second reflective structure 20r may be in an electrically floating state.

[0150] In order to make the common upper electrode 23 and the second reflective structure 20r contact each other, the mask for forming the common upper electrode 23 is Figure 3 The area A shown in FIG. 1 may be larger than the area of ​​the mask used to form the common ETL 22 c and the common HTL 22 a. Figure 3 The area A shown in FIG. 1 is much smaller.

[0151] exist Fig.13In the embodiment, the common organic passivation layer 24 may be omitted. However, the common organic passivation layer 24 may be formed on the common upper electrode 23. In addition, according to an exemplary embodiment, a common inorganic passivation layer (not shown) may also be formed on the common organic passivation layer 24.

[0152] At least one light blocking structure 170 may be included in the panel to enhance light blocking.

[0153] In another exemplary embodiment, in order to reduce light interference of light entering the optical unit 10 from the exclusive emission layer 22b, the distance between the exclusive emission layer 22b and the light transmission area 210 may be increased. In this case, light flowing into the optical unit may be reduced.

[0154] In another exemplary embodiment, the light inflow may be reduced by forming pixels of a normally black mode near the first spacer 21 a or by making the pixels near the first spacer 21 a display black when the optical unit 10 may be used.

[0155] exist Fig.13 In the embodiment, the first groove 24a may be located substantially farther from the light transmission region 210 than the second groove 24b. Fig.13 In the embodiment, the positions of the first groove 24a and the second groove 24b may be exchanged. One first groove 24a may be formed inside the second groove 24b, and the other first groove 24a may be formed outside the second groove 24b.

[0156] Will refer to Fig.14 To describe Fig.13 A variation of the exemplary embodiment in .

[0157] Fig.14 is a diagram showing a method according to an exemplary embodiment Figure 2 An enlarged view of portion Y in FIG. Fig.14 The exemplary embodiment of Fig.13 The exemplary embodiments in the present invention may cooperate with and complement each other. Fig.13 The exemplary embodiments and Fig.14 The exemplary embodiments in may not be mutually exclusive.

[0158] The planarization layer 19 and the pixel defining layer 21 may have sidewalls extending along the contour of the light transmission region 210 in at least a portion of the buffer region, and the common upper electrode 23 may extend on the planarization layer 19 and the pixel defining layer 21 to cover the sidewalls. In this case, at least a portion of the common upper electrode 23 may also serve as a portion of the light blocking structure 170. Specifically, in Fig.14In the embodiment, the first groove 24a may extend to the planarization layer 19 to block light transmitted to the optical unit 10 through the planarization layer 19. A void V may be formed in the first groove 24a so that an effect of blocking light by using the common upper electrode 23 at least twice may be obtained.

[0159] Although not in Fig.14 24 , but the second reflective structure 20r may be exposed from the bottom of the first groove 24a, and the second reflective structure 20r may be connected to the common upper electrode 23. Power transmitted to the second reflective structure 20r may be provided to the common upper electrode 23, so that the second reflective structure 20r may also perform the function of an auxiliary electrode that reduces a voltage drop (i.e., IR drop) phenomenon of the common upper electrode 23.

[0160] A void V may be formed inside the second reflective structure 20r. The void V may be filled with the pixel defining layer 21. Light may be blocked at least twice by the second reflective structure 20r having the void V filled with the pixel defining layer 21 so that light may not be transmitted to the light transmitting region 210.

[0161] Similar to Fig.13 The second reflective structure 20r shown in FIG. 1 may be further Fig.13 The second reflective structure 20r shown in FIG. Fig.14 In this case, the second reflective structure 20 r , the common upper electrode 23 , the common upper electrode 23 , and the second reflective structure 20 r can respectively effectively perform light blocking functions so that light in the planarization layer 19 does not flow from the planarization layer 19 to the optical unit 10 .

[0162] Will refer to Fig.15 An electroluminescent device according to an exemplary embodiment will be described.

[0163] Fig.15 is a cross-sectional view illustrating an electroluminescent device according to an exemplary embodiment.

[0164] exist Fig.15 In the embodiment, a multi-layer encapsulation layer 31 can be used to replace Figure 2 The inorganic glass frit 250 and the upper glass substrate 150 in the embodiment of the present invention can be replaced by a lower transparent organic polymer substrate 140a. Figure 2 The upper glass substrate 150 and the lower glass substrate 140, Fig.15The lower transparent organic polymer substrate 140a in the embodiment may include a plastic material such as polyimide (PI) having flexible characteristics. Here, the multi-layer encapsulation layer 31 may include a first encapsulation inorganic layer 31a and a second encapsulation inorganic layer 31c, and may include an organic layer 31b. An organic layer 31b may be disposed between the first encapsulation inorganic layer 31a and the second encapsulation inorganic layer 31c.

[0165] In the manufacturing process, a sacrificial glass substrate (not shown) may be disposed under the lower transparent organic polymer substrate 140 a , and the sacrificial glass substrate may be removed in a final step so that the lower transparent organic polymer substrate 140 a may be located at the bottom.

[0166] according to Fig.15 The light transmission area 210 may include the lower transparent organic polymer substrate 140a, the lower extension portion 19a of the planarization layer 19, the planarization layer 19, the pixel defining layer 21, the first spacer 21a, and the multi-layer encapsulation layer 31. Therefore, the light transmission area 210 may have a characteristic of increased transparency.

[0167] exist Fig.15 In the embodiment, the inorganic upper surface of the third inorganic layer 17 disposed at the uppermost portion of the inorganic multilayer 26b and the inorganic lower surface of the first encapsulation inorganic layer 31a disposed at the lowermost portion of the multilayer encapsulation layer 31 may contact each other in an area K corresponding to the inorganic-inorganic encapsulation contact area 251, and the first encapsulation inorganic layer 31a may contact Figure 2 The inorganic frit 250 shown in FIG. 1 has substantially the same function. The inorganic upper surface of the third inorganic layer 17 may be disposed substantially not lower than a plane of a lower surface on which the lower extension portion 19a of the planarization layer 19 may be disposed.

[0168] exist Fig.15 In the embodiment, if the first inorganic layer 13, the second inorganic layer 15 and the third inorganic layer 17 can be all etched in the light transmission area 210, the lower transparent organic polymer substrate 140a, which may include an organic material instead of an inorganic material, will be exposed. Therefore, moisture and oxygen will be directly supplied to the electroluminescent unit due to passing through the lower transparent organic polymer substrate 140a. Therefore, it may be preferred that the first inorganic layer 13, the second inorganic layer 15 and the third inorganic layer 17 may not be all etched in the light transmission area 210. As an example, only the third inorganic layer 17 may be etched in the light transmission area 210. As another example, only the second inorganic layer 15 and the third inorganic layer 17 may be etched in the light transmission area 210. As yet another example, any one of the first inorganic layer 13, the second inorganic layer 15 and the third inorganic layer 17 may not be etched in the light transmission area 210.

[0169] According to an exemplary embodiment, when at least one recess R may be formed in an inorganic multilayer 26b including a first inorganic layer 13, a second inorganic layer 15, and a third inorganic layer 17, a thickness T2 of a portion of the inorganic multilayer 26b where the recess R may not be formed may be substantially greater than a thickness T1 of a portion of the inorganic multilayer 26b where the recess R may be formed.

[0170] According to exemplary embodiments, a space into which the optical unit 10 may be inserted may be formed by forming a recess at a lower portion of the lower transparent organic polymer substrate 140 a or by forming a hole passing through the lower transparent organic polymer substrate 140 a .

[0171] The first inorganic layer 13 and the third inorganic layer 17 may include silicon nitride and / or silicon oxynitride. The second inorganic layer 15 may include silicon oxide. In this case, the portion of the inorganic multilayer 26b where the recess R may be formed may have a remainder RP of the inorganic layer including only silicon nitride and / or silicon oxynitride. When the portion of the inorganic multilayer 26b where the recess R may be formed may have a remainder RP of the inorganic layer including only silicon oxide, the inorganic multilayer 26b may not effectively prevent water penetration. This may be because silicon oxide may have a weaker water penetration prevention function than silicon nitride and silicon oxynitride. Specifically, as Fig.15 In the present invention, when a lower transparent organic polymer substrate 140a having substantially poor water penetration preventing properties may be located below the inorganic multilayer 26b, it may be desirable that the portion of the inorganic multilayer 26b in which the recess R may be formed may include a remaining portion RP of an inorganic layer having silicon nitride and / or silicon nitride oxide, which may have substantially good water penetration preventing properties.

[0172] Although not in Fig.15 , but in order to form the recess R, the second inorganic layer 15 including silicon oxide may be removed, while the first inorganic layer 13 and the third inorganic layer 17 including silicon nitride and / or silicon oxynitride may not be removed. In this case, the first inorganic layer 13 and the third inorganic layer 17 may be in direct contact with each other near the recess R, so that the packaging function can be improved, and the Bragg mirror phenomenon generated when several layers with substantially different refractive indices may be deposited can be advantageously reduced.

[0173] Will refer to Fig.16 An electroluminescent device including a light-transmitting region 210 having different shapes will be described.

[0174] Fig.16 is a plan view showing an electroluminescent device according to an exemplary embodiment.

[0175] In addition to the light transmission area 210 having a sufficient size to accommodate Figure 2In addition to the multiple optical units 10 shown in FIG. Fig.16 The electroluminescent device shown in FIG. Figure 1 The electroluminescent devices shown in are essentially the same.

[0176] At least two optical units 10 may be arranged Fig.16 The electroluminescent device may further include a light blocking structure (not shown) disposed in the region between the two optical units 10. In this case, the light blocking structure may have a Fig.13 or Fig.14 The light blocking structure 170 shown in FIG. 1 is substantially the same structure.

[0177] Will refer to Fig.17 An electroluminescent device including light-transmitting regions 210 having different positions is described.

[0178] Fig.17 is a plan view showing an electroluminescent device according to an exemplary embodiment.

[0179] Reference Fig.17 , may further include an inner buffer region 202. The inner buffer region 202 may completely surround the light transmission region 210 in a plan view. The inner buffer region 202 may be completely surrounded by the display region 100 in a plan view. The outer buffer region 201 may completely surround the display region 100. The inorganic-inorganic encapsulation contact region 251 may completely surround the outer buffer region 201 in a plan view.

[0180] The reference Fig.17 The exemplary embodiment will be described in detail with reference to a cross-sectional view taken along line XVIII-XVIII' in FIG.

[0181] Fig.18 is along Fig.17 A cross-sectional view taken along line XVIII-XVIII'.

[0182] When the description Fig.18 When Figure 2 The parts described in are basically the same as the parts described in the description.

[0183] At least one hole corresponding to the light transmission region 210 may be formed through the inorganic multilayer 26b. Since the lower glass substrate 140 may include an inorganic material such as glass, unlike Fig.15 The lower transparent organic polymer substrate 140a which may include an organic material in the lower glass substrate 140 may have excellent encapsulation characteristics. Therefore, a hole corresponding to the light transmission area 210 may be formed through the inorganic multilayer 26b.

[0184] In an exemplary embodiment, in the light transmission region 210, the first inorganic layer 13 may not be removed, and the second inorganic layer 15 and the third inorganic layer 17 may be removed, so that the inorganic multilayer 26b may have at least one recess corresponding to the light transmission region 210. In detail, when the inorganic multilayer 26b may have a first thickness in the light transmission region 210, the inorganic multilayer 26b may have a second thickness much thicker than the first thickness in a region other than the light transmission region 210.

[0185] Will refer to Figures 19 to 21 To describe Fig.18 An opening mask used in the exemplary embodiment of FIG.

[0186] Fig.19 is a plan view showing an opening mask for an evaporation deposition process according to an exemplary embodiment, the evaporation deposition process being used to form a Fig.18 At least one selected from the group of a common HTL 22 a, a common ETL 22 c, a common upper electrode 23 and a common organic passivation layer 24 .

[0187] In the evaporation deposition process for forming at least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24, the region A of the opening mask may be aligned with the region A of the opening mask. Fig.18 The first spacer 21a in the light transmission region 210 is adjacent to the first spacer 21a in the light transmission region 210, so that at least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24 may not be formed on the first spacer 21a. Therefore, it is possible to prevent the light transmittance of the light transmission region 210 from being deteriorated, which is generated when at least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24 may be formed on the first spacer 21a.

[0188] exist Fig.19 In the exemplary embodiment of FIG. 1 , a connection bar 180 may be provided. A plurality of holes H may be formed in the connection bar 180. The deposition material entering through the holes H may diffuse to some extent on a portion covered by the connection bar 180 by a shadow effect, so that at least one selected from the group of the common HTL 22 a, the common ETL 22 c, the common upper electrode 23, and the common organic passivation layer 24 may be commonly deposited.

[0189] At least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24 may not be formed on the second spacer 21b overlapping the connection bar 180. At least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24 may be formed on the second spacer 21b overlapping the hole H. At least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24 may be formed on the second spacer 21b overlapping the region C.

[0190] exist Fig.19 , the connecting bar 180 may be connected to the region A in the X-axis direction. As an alternative, the connecting bar 180 may be connected to the region A in the Y-axis direction substantially perpendicular to the X-axis direction. As another alternative, the connecting bar 180 may be connected to the region A in the X-axis direction, and the connecting bar 180 may also be connected to the region A in the Y-axis direction.

[0191] Will refer to Fig. 20 An opening mask according to an exemplary embodiment will be described.

[0192] Fig. 20 is a plan view illustrating an opening mask used for an evaporation deposition process for forming at least one selected from the group of a common HTL 22 a , a common ETL 22 c , a common upper electrode 23 , and a common organic passivation layer 24 according to an exemplary embodiment.

[0193] In addition to the single connecting strip 180, Fig. 20 The opening mask in Fig.19 A single connection bar 180 may be disposed between the region P and the region A.

[0194] Fig. 20 The width of the connecting strip 180 shown in FIG. 1 may be substantially greater than the diameter of the region A. As an alternative, the width of the connecting strip 180 may be substantially equal to the diameter of the region A. As another alternative, the width of the connecting strip 180 may be substantially less than the diameter of the region A.

[0195] It may be preferred that the connection bar 180 may be connected to the peripheral area closest to the area A.

[0196] According to an exemplary embodiment, the hole H may not be formed in Fig. 20 In this case, a region D in the embodiment of the present invention can be formed having a pattern substantially similar to Figure 1 The portion of “Ω” shown in the display area 100 .

[0197] Will refer to Fig.21 An opening mask according to an exemplary embodiment will be described.

[0198] Fig.21 is a plan view showing an opening mask for an evaporation deposition process according to an exemplary embodiment, the evaporation deposition process being used to form a Fig.18 At least one selected from the group of a common HTL 22 a, a common ETL 22 c, a common upper electrode 23 and a common organic passivation layer 24 .

[0199] In the evaporation deposition process for forming at least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24, the region A of the opening mask may be aligned with the region A of the opening mask. Fig.18 The first spacer 21a in the light transmission region 210 is adjacent to the first spacer 21a in the light transmission region 210, so that at least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24 may not be formed on the first spacer 21a. Therefore, it is possible to prevent the light transmittance of the light transmission region 210 from being deteriorated, which is generated when at least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24 may be formed on the first spacer 21a.

[0200] A region B (ie, a rigid portion) having a plurality of holes H may be formed in a peripheral region of the region A so that at least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24 may be deposited through the holes H.

[0201] At least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24 may not be formed on the second spacer 21b overlapping the region B. At least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23, and the common organic passivation layer 24 may be formed on the second spacer 21b overlapping the hole H.

[0202] Will refer to Fig. 22 and Fig.23 To describe by using Figures 19 to 21 An electroluminescent device formed by a mask in.

[0203] Fig. 22 and Fig.23 is a plan view showing an electroluminescent device according to an exemplary embodiment, the electroluminescent device having a display area 100, a first spacer 21a, a fourth spacer 21d and an inorganic-inorganic package contact area 251, and by using Fig.19 , Fig. 20 or Fig.21 The opening mask shown in is formed.

[0204] Reference Fig. 22 , the first spacer 21a may be surrounded by the display area 100 in a plan view. The inorganic-inorganic package contact region 251 may surround the display area 100 in a plan view. The fourth spacer 21d may surround the inorganic-inorganic package contact region 251 in a plan view. The first spacer 21a and the fourth spacer 21d may have substantially the same height. Figures 19 to 21 The region A in FIG. 2 may correspond to the first spacer 21 a , such that the region A may be in contact with the first spacer 21 a or may be adjacent to the first spacer 21 a . Figures 19 to 21 The region P in FIG. 2 may correspond to the fourth spacer 21 d , such that the region P may be in contact with the fourth spacer 21 d or may be adjacent to the fourth spacer 21 d .

[0205] Reference Fig.23 , the first spacer 21a may be surrounded by the display area 100 in a plan view. The display area 100 may be surrounded by the fourth spacer 21d in a plan view. The fourth spacer 21d may have substantially the same height as the first spacer 21a. The fourth spacer 21d may be surrounded by the inorganic-inorganic encapsulation contact region 251 in a plan view. Figures 19 to 21 The region A in FIG. 2 may correspond to the first spacer 21 a , such that the region A may be in contact with the first spacer 21 a or adjacent to the first spacer 21 a . Figures 19 to 21 The region P in FIG. 2 may correspond to the fourth spacer 21 d , such that the region P may be in contact with the fourth spacer 21 d or may be adjacent to the fourth spacer 21 d .

[0206] In the following, reference will be made to Fig.24 To describe the exemplary embodiment Fig.18 The opening mask in .

[0207] Fig.24 is a plan view showing an opening mask for an evaporation deposition process according to an exemplary embodiment, the evaporation deposition process being used to form a Fig.18 At least one selected from the group of a common HTL 22 a, a common ETL 22 c, a common upper electrode 23 and a common organic passivation layer 24 .

[0208] When using Fig.24 When the opening mask is formed in the embodiment of the present invention, at least one selected from the group of the common HTL 22a, the common ETL 22c, the common upper electrode 23 and the common organic passivation layer 24 may be disposed in Fig.18However, when considering that the common HTL 22a, the common ETL 22c and the common organic passivation layer 24 may include organic materials and the common upper electrode 23 may be a semi-transparent electrode for a top emission type, the light transmittance of the light transmission region 210 is not excessively reduced. Fig.12 Therefore, the dedicated emission layer 22b may not be formed on the first spacer 21a. Fig.24 The opening mask.

[0209] Will refer to Fig.25 To describe Fig.18 An exemplary variation of .

[0210] Fig.25 is a cross-sectional view illustrating an electroluminescent device according to an exemplary embodiment.

[0211] Reference Fig.25 , a multi-layer encapsulation layer 31 can be used instead Fig.18 The inorganic glass frit 250 and the upper glass substrate 150 in the embodiment of the present invention can be replaced by a lower transparent organic polymer substrate 140a. Fig.18 In addition to the above-described aspects, Fig.25 Can be used with Fig.18 Basically the same, therefore, description of the same parts will be omitted.

[0212] exist Fig.25 In the exemplary embodiment, the second thickness T2 of the second portion of the inorganic multilayer 26b may be much greater than the first thickness T1 of the first portion of the inorganic multilayer 26b, the second portion including the first inorganic layer 13, the second inorganic layer 15 and the third inorganic layer 17, and the first portion having a recess.

[0213] exist Fig.25In the embodiment, the inorganic passivation layer may not be shown on the common organic passivation layer 24. However, the inorganic passivation layer may be formed on the common organic passivation layer 24. The inorganic passivation layer may include a semiconductive material or a conductive material. Examples of materials included in the inorganic passivation layer may include lithium fluoride (LiF). LiF may be a material that can be deposited by an evaporation deposition process. Therefore, when LiF can be deposited by an evaporation deposition process, the work function of the common upper electrode 23 may not change. This may be because plasma that damages the common upper electrode 23 in PE-CVD does not occur in the evaporation process. The inorganic passivation layer may be in contact with the common organic passivation layer 24. The inorganic passivation layer may be a common layer covering the first spacer 21a to strongly protect the common upper electrode 23. Alternatively, the inorganic passivation layer may be a common layer that does not cover the first spacer 21a to improve the light transmittance of the light transmission area 210. When the inorganic passivation layer may be a common layer covering the first spacer 21a, it may be used Fig.24 When the inorganic passivation layer may be a common layer that does not cover the first spacer 21a, the inorganic passivation layer may be formed using the mask shown in FIG. Figures 19 to 21 The inorganic passivation layer is formed using the mask described in .

[0214] According to an exemplary embodiment, the electroluminescent device may have at least two Figure 1 The light transmission area 210, at least two Fig.16 The light transmission area 210 or at least two Fig.17 Alternatively, the electroluminescent device may have a light-transmitting region 210. Figure 1 The light transmission area 210, Fig.16 The light transmission area 210 and Fig.17 At least two different types of light-transmitting regions 210 among the light-transmitting regions 210 in the embodiment.

[0215] Although certain exemplary embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this description. Therefore, the inventive concept is not limited to such embodiments, but rather, the inventive concept is limited to the broader scope of the appended claims and various obvious modifications and equivalent arrangements as will be apparent to those of ordinary skill in the art.

Claims

1. An electroluminescent device, comprising: A lower structure, comprising a substrate and an inorganic multilayer disposed on the substrate; as well as A packaging structure is arranged on the lower structure, The lower structure includes: a display area; a light transmission area having a non-through hole structure including at least a portion surrounded by the display area; and a buffer area having at least a portion extending between the display area and the light transmission area along the contour of the light transmission area so as to separate the display area from the light transmission area. The lower structure further comprises: a light blocking structure extending along the contour of the light transmission area in at least a portion of the buffer area; a planarization layer which is transparent and disposed on the inorganic multilayer; a reflective electrode which is a dedicated layer disposed on the planarization layer; a pixel defining layer which is transparent and disposed on the planarization layer to cover the side of the reflective electrode; an intermediate multilayer disposed on the reflective electrode; and a semi-transparent electrode which is a common layer disposed on the intermediate multilayer. wherein the pixel defining layer has a side wall extending along the contour of the light transmission area in at least a portion of the buffer area, wherein the light blocking structure comprises a translucent member, the translucent member extends on the pixel defining layer to cover the side wall of the pixel defining layer, and is a single component with the translucent electrode, and The non-through hole structure has no holes penetrating the substrate.

2. An electroluminescent device, comprising: A lower structure, comprising a substrate and an inorganic multilayer disposed on the substrate; as well as A packaging structure is arranged on the lower structure, The lower structure includes: a display area; a light transmission area having a non-through hole structure including at least a portion surrounded by the display area; and a buffer area having at least a portion extending between the display area and the light transmission area along the contour of the light transmission area so as to separate the display area from the light transmission area. The lower structure further comprises: a light blocking structure extending along the contour of the light transmission area in at least a portion of the buffer area; a planarization layer which is transparent and disposed on the inorganic multilayer; a reflective electrode which is a dedicated layer disposed on the planarization layer; a pixel defining layer which is transparent and disposed on the planarization layer to cover the side of the reflective electrode; an intermediate multilayer disposed on the reflective electrode; and a semi-transparent electrode which is a common layer and disposed on the intermediate multilayer. wherein the planarization layer and the pixel defining layer have side walls extending along the contour of the light transmission area in at least a portion of the buffer area, wherein the light blocking structure has a translucent member, the translucent member extends on the planarization layer and the pixel defining layer to cover the side wall, and is a single component with the translucent electrode, and The non-through hole structure has no holes penetrating the substrate.

3. The electroluminescent device according to claim 2, in, The light blocking structure further includes a reflective structure disposed on the inorganic multilayer, The side wall is in contact with the upper surface of the reflective structure, so that the translucent member is in contact with the upper surface of the reflective structure.

4. The electroluminescent device according to claim 3, in, The intermediate multilayer has at least one intermediate common layer, and The side of the translucent component is much closer to the light transmission area than the side of the intermediate common layer.

5. An electroluminescent device, comprising: A lower structure, comprising a substrate and an inorganic multilayer disposed on the substrate; as well as A packaging structure is arranged on the lower structure, The lower structure includes: a display area; a light transmission area having a non-through hole structure including at least a portion surrounded by the display area; and a buffer area having at least a portion extending between the display area and the light transmission area along the contour of the light transmission area so as to separate the display area from the light transmission area. The lower structure further comprises: a light blocking structure extending along the contour of the light transmission area in at least a portion of the buffer area; and a planarization layer which is transparent and disposed on the inorganic multilayer. wherein the non-through hole structure has no holes penetrating the substrate, and Wherein, the light blocking structure includes a first reflective structure disposed on the planarization layer.

6. The electroluminescent device according to claim 5, in, The lower structure also includes: A reflective electrode is a dedicated layer disposed on the planarization layer; a pixel defining layer, which is transparent and is disposed on the planarization layer to cover the side of the reflective electrode; an intermediate multilayer, disposed on the reflective electrode; and A semi-transparent electrode is a common layer disposed on the intermediate multilayers, and Wherein, the first reflective structure and the reflective electrode are arranged on the same layer.

7. The electroluminescent device according to claim 6, in, The planarization layer has a first sidewall extending along the outline of the light transmission region in the at least a portion of the buffer region.

8. The electroluminescent device according to claim 7, in, The first reflective structure extends on the planarization layer to cover the first sidewall.

9. The electroluminescent device according to claim 8, in, The light blocking structure further includes a second reflective structure disposed on the inorganic multilayer, and The first side wall contacts an upper surface of the second reflective structure, so that the first reflective structure contacts the upper surface of the second reflective structure.

10. The electroluminescent device according to claim 8, in, The pixel defining layer has a second sidewall extending along the outline of the light transmission area in at least a portion of the buffer area, The light blocking structure further comprises a translucent member, the translucent member extends on the pixel defining layer to cover the second side wall, and is a single component with the translucent electrode, and The second side wall is in contact with an upper surface of the first reflective structure, so that the translucent member is in contact with the upper surface of the first reflective structure.

11. The electroluminescent device according to claim 10, in, The intermediate multiple layers include at least one intermediate common layer, and The side of the translucent component is much closer to the light transmission area than the side of the intermediate common layer.

12. The electroluminescent device according to claim 5, in, The first reflective structure has at least one hole.

13. The electroluminescent device according to any one of claims 1, 2 and 5, in, The inorganic multilayer structure includes at least one recess corresponding to the light transmitting region and filled with the planarization layer.

14. The electroluminescent device according to claim 13, in, The inorganic multilayer includes one of a layer including a nitride or an oxynitride, and an oxide layer, and The oxide layer is partially removed at the upper portion of the inorganic multilayer through the at least one recess, and the layer including nitride or oxynitride is not partially removed at the upper portion of the inorganic multilayer through the at least one recess.

15. The electroluminescent device according to any one of claims 1, 2 and 5, in, The light blocking structure comprises a conductive material; and Wherein, the light blocking structure does not transmit electrical signals.

16. The electroluminescent device according to any one of claims 1, 2 and 5, in, The substrate includes glass or an organic polymer.

17. The electroluminescent device according to any one of claims 1, 2 and 5, in, The display area is defined within the outline of the inorganic multilayer in plan view, and The light transmission area is defined inside the outline of the inorganic multilayer in a plan view and has a non-through hole structure, and the non-through hole structure has at least a portion surrounded by the display area.

18. The electroluminescent device according to any one of claims 1, 2 and 5, in, The display area is opaque.

19. The electroluminescent device according to any one of claims 1, 2 and 5, in, The inorganic multilayer includes at least one hole corresponding to the light-transmitting region.

20. The electroluminescent device according to any one of claims 1, 2 and 5, in, The light-transmitting area includes a plurality of transparent display pixels.

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